CN108933088B - Packaging method and packaging structure - Google Patents
Packaging method and packaging structure Download PDFInfo
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- CN108933088B CN108933088B CN201710377330.6A CN201710377330A CN108933088B CN 108933088 B CN108933088 B CN 108933088B CN 201710377330 A CN201710377330 A CN 201710377330A CN 108933088 B CN108933088 B CN 108933088B
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 42
- 230000008021 deposition Effects 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000005022 packaging material Substances 0.000 claims abstract description 30
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 238000000678 plasma activation Methods 0.000 claims abstract description 28
- 239000000126 substance Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims description 85
- 239000001257 hydrogen Substances 0.000 claims description 46
- 229910052739 hydrogen Inorganic materials 0.000 claims description 46
- 150000002431 hydrogen Chemical class 0.000 claims description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 18
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 17
- 229910052736 halogen Inorganic materials 0.000 claims description 16
- -1 amino, methylamino, dimethylamino, diethylamino, acetylamino Chemical group 0.000 claims description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 13
- 125000006832 (C1-C10) alkylene group Chemical group 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 125000006374 C2-C10 alkenyl group Chemical group 0.000 claims description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 125000000262 haloalkenyl group Chemical group 0.000 claims description 12
- 125000001188 haloalkyl group Chemical group 0.000 claims description 12
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000004952 Polyamide Substances 0.000 claims description 8
- 229920002647 polyamide Polymers 0.000 claims description 8
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 7
- 238000009832 plasma treatment Methods 0.000 claims description 7
- 229920000728 polyester Polymers 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- 125000000732 arylene group Chemical group 0.000 claims description 6
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052794 bromium Inorganic materials 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical group 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 4
- 239000003566 sealing material Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 19
- 238000012858 packaging process Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 239000004033 plastic Substances 0.000 description 12
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 8
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000032798 delamination Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910007933 Si-M Inorganic materials 0.000 description 2
- 229910008318 Si—M Inorganic materials 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 231100001240 inorganic pollutant Toxicity 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Abstract
The invention provides a packaging method and a packaging structure adopting the same. The packaging method provided by the invention is characterized in that at least one part of the surface of the base material is exposed to plasma, and plasma activation and plasma deposition are sequentially carried out, so that the compound represented by the chemical formula (I) forms a plasma deposition layer on the surface of the base material, thereby effectively improving the bonding force between the base material and the packaging material and avoiding packaging failure caused by layering between the base material and the packaging material. In addition, the method provided by the invention completes two processes of plasma activation and plasma deposition on the surface of the base material in the same cavity and the same process, and the plasma deposition layer formed on the surface of the base material by the method provided by the invention is a solid, and no additional curing is needed, so that the packaging process is more convenient and rapid on the whole.
Description
Technical Field
The present invention relates to the field of semiconductor packaging technology, and in particular, to a packaging method and a packaging structure using the same.
Background
The semiconductor packaging field has higher and higher requirements on the bonding reliability of the base material and the plastic packaging material, and in order to improve the bonding force of the base material and the plastic packaging material, the base material and the plastic packaging material are bonded in a wet chemical reaction mode in the prior art, namely, an Adhesion enhancer (Adhesion Promoter) diluted by a solvent is sprayed on the surface of the base material.
However, these wet processes are very complicated, and usually require pretreatment of the sample and high-temperature baking and curing after the spraying. More importantly, these processes require large amounts of solvents, which are present in very high proportions (> 90%) in the overall chemical formulation, and thus are extremely hazardous and thus pose an obstacle to the wide implementation of wet processes.
Therefore, the semiconductor packaging industry is looking for a simpler, faster, environmentally friendly and safe way to enhance the adhesion between the substrate and the molding compound.
Disclosure of Invention
In order to solve the above problems, the present invention provides a packaging method, which can effectively improve the bonding force between the substrate and the packaging material and avoid the packaging failure caused by the delamination between the substrate and the packaging material. The invention also provides a packaging structure, in which the substrate and the packaging material form stable and reliable combination.
The invention comprises the following technical scheme.
1. A method of packaging, characterized in that at least a part of the surface of a substrate is exposed to a plasma, at least a part of the surface of the substrate is subjected to a plasma treatment in which a plasma-forming gas contains at least a compound represented by formula (I),
wherein R is1And R3Each independently selected from hydrogen, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, or C6-C10 halogen substituted aryl; r2Selected from C1-C10 alkylene, C1-C10 haloalkylene, or C6-C10 halogen substituted arylene; r4、R5And R6Each independently selected from hydrogen, chlorine, bromine, iodine, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, C6-C10 halogen substituted aryl or-O (CH)2)nY, wherein: n is an integer from 1 to 10, Y is hydrogen or methyl; x is selected from hydrogen, formyl, acetyl, carboxyl, tert-butyloxycarbonyl, amino, methylamino, dimethylamino, diethylamino, acetylamino, benzyloxycarbonylamino, nitro, formyloxy or acetoxy.
2. The method for encapsulating according to the above (1), characterized in that the plasma treatment includes at least plasma deposition in which a gas forming a plasma contains at least the compound represented by the chemical formula (I). 3. The method of encapsulating according to the above (1), wherein R is1And R3Each independently hydrogen or C1-C10 alkyl; r2Is C1-C10 alkylene; r4、R5And R6Each independently of the others hydrogen, C1-C10 alkyl or-O (CH)2)nY, wherein: n is an integer from 1 to 4, Y is hydrogen or methyl; x is formyl, acetyl, carboxyl or amino.
4. The method for encapsulating according to the above (1), wherein the compound represented by the formula (I) is selected from:
5. the method for encapsulating according to (2) above, wherein the plasma treatment further includes plasma activation before the plasma deposition, and a gas forming the plasma in the plasma activation contains at least one of oxygen, nitrogen, carbon monoxide, carbon dioxide, hydrogen, argon, or helium.
6. The method for encapsulating according to (5) above, wherein in the plasma activation, a gas forming the plasma contains at least oxygen or argon.
7. The method for encapsulating according to the above (2), characterized in that a degree of vacuum of a back surface of the plasma activation and plasma deposition is 0.1 to 10000 Pa; in the plasma activation, the radio frequency power for exciting the plasma is 10-10000W, the pulse voltage frequency is 1-10000Hz, and the duty ratio is 1-100%; in the plasma deposition, the radio frequency power for exciting the plasma is 1-10000W, the frequency of pulse voltage is 1-1000KHz, and the duty ratio is 1-100%.
8. The method for encapsulating according to the above (7), wherein a degree of vacuum of a back surface of the plasma activation and plasma deposition is 1 to 100 Pa; in the plasma activation, the radio frequency power for exciting the plasma is 50-800W, the pulse voltage frequency is 50-150Hz, and the duty ratio is 50-100%; in the plasma deposition, the duty ratio of pulse voltage for exciting the plasma is 5-50%.
9. The method for encapsulating according to (2) above, further comprising: mounting a semiconductor element on the substrate before or after the steps of sequentially performing plasma activation and plasma deposition on at least a part of the surface of the substrate.
10. The method for packaging according to (9) above, further comprising: bonding at least a portion of the surface of the substrate with the encapsulating material after sequentially performing the steps of plasma activation and plasma deposition on at least a portion of the surface of the substrate and mounting a semiconductor element on the substrate.
11. The method for encapsulating according to (10) above, wherein at least a part of the surface of the base material is bonded to the encapsulating material at normal temperature.
12. The method for packaging according to any one of the above (1) to (11), wherein the substrate is at least one of a copper lead frame, an aluminum pad, a polyimide substrate, an ethyl orthosilicate coated substrate, a silicon oxide substrate and a silicon nitride substrate.
13. The method for encapsulating according to the above (10) or (11), characterized in that the encapsulating material is at least one of epoxy resin, polyamide, and polyester.
14. A package structure, comprising: a substrate carrying a semiconductor element, an encapsulating material, a plasma deposition layer being included between at least a part of a surface of the substrate and the encapsulating material, the plasma deposition layer being formed by plasma deposition of a compound represented by formula (I),
wherein R is1And R3Each independently selected from hydrogen, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, or C6-C10 halogen substituted aryl; r2Selected from C1-C10 alkylene, C1-C10 haloalkylene, or C6-C10 halogen substituted arylene; r4、R5And R6Each independently selected from hydrogen, chlorine, bromine, iodine, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, C6-C10 halogen substituted aryl or-O (CH)2)nY, wherein: n is an integer from 1 to 10, Y is hydrogen or methyl; x is selected from hydrogen, formyl, acetyl, carboxyl, tert-butyloxycarbonyl, amino, methylamino, dimethylamino, diethylamino, acetylamino, benzyloxycarbonylamino, nitro, formyloxy or acetoxy.
15. The package structure according to the above (14), wherein R is1And R3Each independently is hydrogen or C1-C10 alkaneA group; r2Is C1-C10 alkylene; r4、R5And R6Each independently of the others hydrogen, C1-C10 alkyl or-O (CH)2)nY, wherein: n is an integer from 1 to 4, Y is hydrogen or methyl; x is formyl, acetyl, carboxyl or amino.
16. The encapsulation structure according to the above (14), wherein the compound represented by the formula (I) is selected from:
17. the package structure according to any one of the above (14) to (16), wherein the substrate is at least one of a copper lead frame, an aluminum pad, a polyimide substrate, an ethyl orthosilicate coated substrate, a silicon oxide substrate, and a silicon nitride substrate.
18. The encapsulation structure according to any one of the above (14) to (16), characterized in that the encapsulating material is at least one of epoxy resin, polyamide, and polyester.
Technical effects
According to the invention, the plasma deposition layer is formed on the surface of the base material through the plasma activation and plasma deposition polymerization processes, and the deposition layer can effectively enhance the binding force between the base material and the packaging material, so that the stability of the packaging structure is realized. Specifically, the technical effects of the present invention are embodied in the following aspects:
first, in the practice of the present invention, at least a portion of the surface of the substrate is plasma activated, and in this step, a plasma is formed from a gas such as oxygen, nitrogen, carbon monoxide, carbon dioxide, hydrogen, argon or helium, and the valence bonds of the substrate surface are opened by the plasma to form dangling bonds, or functional groups (e.g., -OH, -COOH) are introduced to the surface of the substrate, and these dangling bonds or functional groups provide fast growth sites for the subsequent plasma deposition, facilitating the plasma deposition and polymerization of the compound. In addition, the plasma formed by the gases such as oxygen, nitrogen, carbon monoxide, carbon dioxide, hydrogen, argon or helium also cleans the surface of the substrate, removes the pollutants on the surface of the substrate, and provides a clean surface for the subsequent plasma deposition of the compounds.
Secondly, in the implementation process of the invention, the selective growth and deposition of the compound of the formula (I) on the surface of the substrate are realized by adjusting the plasma process parameters. In the structural formula of the compound, R5The terminal is preferentially chemically bonded with the surface of the substrate to form X-R2-C-Si-O-M or X-R2-C-Si-M chemical structure (M is the substrate); and the functional group X at the other end of the compound structure is suspended, and the functional group X can react with the packaging material at normal temperature to form N-X chemical bonding (N is the packaging material). Due to the bidirectional reaction characteristic of the compound, the plasma deposition layer formed on the surface of the base material can greatly improve the binding force between the base material and the plastic packaging material, and the packaging failure caused by layering is avoided.
In addition, the plasma activation and cleaning, and the plasma deposition are realized in the same plasma chamber; and the plasma deposition layer formed on the surface of the base material is a solid, and additional curing is not needed, so that the packaging process is more convenient and rapid on the whole. Moreover, by adopting the method provided by the invention, the selective deposition of the plasma deposition layer on the surface of the substrate can be completed without using any chemical solvent, so that the bonding force between the substrate and the packaging material is improved, and the method is more environment-friendly and safer compared with the prior art.
The packaging structure obtained by the method is firm and stable, and packaging failure caused by layering between the base material and the packaging material is effectively avoided.
Detailed Description
The following describes a technical solution of one or more embodiments of the present invention. It is to be understood that the embodiments described herein are only a few embodiments of the present invention, and not all embodiments. It should be noted that all other embodiments obtained by those skilled in the art based on the embodiments of the present invention belong to the protection scope of the present invention.
The specific implementation mode of the invention comprises the following steps:
s1: sending the semiconductor substrate sample into a vacuum chamber to expose at least one part of the surface of the substrate, starting a vacuum system, pumping the vacuum chamber to back pressure, and enabling the vacuum degree of the back bottom to be 0.1-10000 Pa; preferably, the degree of vacuum on the back side is 1 to 100 Pa. This step provides a clean process environment for the subsequent processes.
S2: substrate surface activation and cleaning: the gas for plasma activation, specifically, oxygen, nitrogen, carbon monoxide, carbon dioxide, hydrogen, argon, or helium, and preferably oxygen or argon, is introduced into the vacuum chamber. Simultaneously, starting a radio frequency power supply, wherein the radio frequency power is 10-10000W, the pulse voltage frequency is 1-10000Hz, and the duty ratio is 1-100%; preferably, the RF power is 50-800W, the pulse voltage frequency is 50-150Hz, and the duty ratio is 50-100%, so as to generate plasma. This step opens the valence bonds of the substrate surface by the action of the plasma to form dangling bonds or introduces some functional groups (such as-OH, -COOH) to the surface of the substrate, and these dangling bonds or functional groups provide fast growth sites for the subsequent plasma deposition. In addition, the active particles generated by the plasma can perform oxidation reaction with organic pollutants on the surface of the base material or perform reduction reaction with inorganic pollutants, or be simply subjected to physical bombardment, and the pollutants on the surface of the base material are removed by the methods, so that a clean surface is provided for the subsequent plasma deposition.
S3: plasma deposition: introducing a compound represented by the formula (I) into a plasma chamber,
wherein R is1And R3Each independently selected from hydrogen, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, or C6-C10 halogen substituted aryl; r2Selected from C1-C10 alkylene, C1-C10 haloalkylene, or C6-C10 halogen substituted arylene; r4、R5And R6Each independently selected from hydrogen, chlorine, bromine, iodine, C1-C10 alkyl, C2-C10 alkenyl,C1-C10 haloalkyl, C2-C10 haloalkenyl, C6-C10 halogen-substituted aryl or-O (CH)2)nY, wherein: n is an integer from 1 to 10, Y is hydrogen or methyl; x is selected from hydrogen, formyl, acetyl, carboxyl, tert-butyloxycarbonyl, amino, methylamino, dimethylamino, diethylamino, acetylamino, benzyloxycarbonylamino, nitro, formyloxy or acetoxy.
Preferably, in the compound represented by the above formula (I), R is1And R3Each independently hydrogen or C1-C10 alkyl; r2Is C1-C10 alkylene; r4、R5And R6Each independently of the others hydrogen, C1-C10 alkyl or-O (CH)2)nY, wherein: n is an integer from 1 to 4, Y is hydrogen or methyl; x is formyl, acetyl, carboxyl or amino.
After the gas flow of the compound of formula (I) is stable, when the pressure is stable within the range of 1-10000T, starting the radio frequency plasma, wherein the radio frequency power is 1-10000W, the pulse frequency is 1-1000KHz, the pulse voltage frequency is 1-1000KHz, and the duty ratio is 1-100%; preferably, the duty ratio of exciting plasma in this step is 5-50%.
In the step, the adjustment of the plasma energy and the temperature is realized through the adjustment of the plasma excitation process parameters, so that the plasma reaction process can be controlled, and chemicals are polymerized and deposited on the surface of the activated base material in the plasma phase. R in the structure of a compound5The terminal is preferentially chemically bonded with the surface of the substrate to form X-R2-C-Si-O-M or X-R2-C-Si-M chemical structure (M is the substrate); and the functional group X at the other end of the compound structure is suspended, and the functional group X can react with the packaging material at normal temperature to form N-X chemical bonding (N is the packaging material).
Further, embodiments of the present invention further comprise the steps of: mounting a semiconductor element on a substrate before or after sequentially performing steps of plasma activation and plasma deposition on at least a part of a surface of the substrate. After the steps of sequentially performing plasma activation and plasma deposition on at least a part of the surface of the substrate and mounting the semiconductor element on the substrate are completed, the substrate and the encapsulating material are bonded at normal temperature.
In addition, the substrate used in the embodiment of the present invention may be at least one of a copper lead frame, an aluminum pad, a polyimide substrate, an ethyl orthosilicate coated substrate, a silicon oxide substrate, and a silicon nitride substrate; the packaging material used is at least one of epoxy resin, polyamide and polyester.
By the embodiment of the invention, the cleaning and activation of the surface of the substrate and the selective growth of the adhesion enhancement deposition layer are completed in the same cavity and the same process. The bonding force between the base material and the plastic packaging material can be effectively improved through the process, so that the layering condition between the two materials is improved.
Embodiments of the present invention also provide a semiconductor package structure, which includes: a substrate carrying a semiconductor element and an encapsulating material, at least a part of a surface of the substrate and the encapsulating material including a plasma deposition layer therebetween and at least a part of a surface of the substrate and the encapsulating material being bonded by the plasma deposition layer, the plasma deposition layer being formed by plasma deposition of a compound represented by formula (I),
wherein R is1And R3Each independently selected from hydrogen, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, or C6-C10 halogen substituted aryl; r2Selected from C1-C10 alkylene, C1-C10 haloalkylene, or C6-C10 halogen substituted arylene; r4、R5And R6Each independently selected from hydrogen, chlorine, bromine, iodine, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, C6-C10 halogen substituted aryl or-O (CH)2)nY, wherein: n is an integer from 1 to 10, Y is hydrogen or methyl; x is selected from hydrogen, formyl, acetyl, carboxyl, tert-butyloxycarbonyl, amino, methylamino, dimethylamino, diethylamino, acetylamino, benzyloxycarbonylaminoA nitro group, a formyloxy group or an acetoxy group.
Preferably, in the compound represented by the above formula (I), R is1And R3Each independently hydrogen or C1-C10 alkyl; r2Is C1-C10 alkylene; r4、R5And R6Each independently of the others hydrogen, C1-C10 alkyl or-O (CH)2)nY, wherein: n is an integer from 1 to 4, Y is hydrogen or methyl; x is formyl, acetyl, carboxyl or amino.
In the package structure provided by the embodiment of the invention, the substrate may be at least one of a copper lead frame, an aluminum bonding pad, a polyimide substrate, an ethyl orthosilicate coating substrate, a silicon oxide substrate and a silicon nitride substrate; the packaging material is a plastic packaging material, and specifically, the packaging material can be at least one of epoxy resin, polyamide and polyester.
Hereinafter, the compounds used in each example are listed in the following table 1.
Table 1:
example 1
S1: after the substrate (polyimide substrate) is sent into the vacuum chamber, the vacuum system is started, the vacuum chamber is pumped to the back pressure, the vacuum degree of the back bottom of the vacuum chamber is 100Pa, and a clean process environment is provided for the subsequent process.
S2: plasma activation: introducing oxygen into the vacuum chamber; simultaneously, starting a radio frequency power supply, wherein the radio frequency power is 800W, the pulse voltage frequency is 150Hz, and the duty ratio is 50%; and exciting to generate plasma.
S3: plasma deposition: the following chemicals (compound 1) were introduced into the plasma chamber:
after the gas flow is stable, when the pressure is stable within the range of 1-10000T, starting the radio frequency plasma, wherein the radio frequency power is 7000W, the pulse frequency is 500KHz, the pulse voltage frequency is 1000KHz, and the duty ratio is 50 percent.
And (3) after the prepared polyimide substrate with the plasma deposition layer formed on the surface is pasted with a semiconductor element, reacting with a plastic package material at normal temperature to obtain the packaging structure.
Example 2
S1: after the tetraethoxysilane coating base material (TEOS coating substrate) is sent into the vacuum chamber, the vacuum system is started, the vacuum chamber is pumped to the back pressure, the vacuum degree of the back bottom of the vacuum chamber is 50Pa, and a clean process environment is provided for the subsequent process.
S2: plasma activation: introducing argon into the vacuum chamber; and simultaneously, starting a radio frequency power supply, wherein the radio frequency power is 50W, the pulse voltage frequency is 100Hz, the duty ratio is 80%, and exciting to generate plasma.
S3: plasma deposition: the following chemicals (compound 2) were introduced into the plasma chamber:
after the gas flow is stable, when the pressure is stable within the range of 1-10000T, starting the radio frequency plasma, wherein the radio frequency power is 2000W, the pulse frequency is 200KHz, the pulse voltage frequency is 300KHz, and the duty ratio is 15 percent.
And (3) after the TEOS coating substrate with the coating formed on the surface is pasted with a semiconductor element, reacting with an epoxy resin plastic package material at normal temperature to obtain a packaging structure.
Example 3
S1: and (2) mounting a semiconductor element on the copper lead frame, then sending the copper lead frame mounted with the semiconductor element into a vacuum chamber, starting a vacuum system, pumping the vacuum chamber to back pressure, and enabling the vacuum degree of the back bottom of the vacuum chamber to be 1000Pa, thereby providing a clean process environment for the subsequent process.
S2: plasma activation: introducing carbon monoxide gas into the vacuum chamber; simultaneously, starting a radio frequency power supply, wherein the radio frequency power is 800W, the pulse voltage frequency is 80Hz, and the duty ratio is 40%; and exciting to generate plasma.
S3: plasma deposition: the following chemicals (compound 3) were introduced into the plasma chamber:
after the gas flow is stable, when the pressure is stable within the range of 1-10000T, starting the radio frequency plasma, wherein the radio frequency power is 9000W, the pulse frequency is 600KHz, the pulse voltage frequency is 800KHz, and the duty ratio is 75 percent.
And reacting the prepared copper lead frame which is attached with the semiconductor element and the surface of which is provided with the plasma deposition layer with a polyamide packaging material at normal temperature to obtain the packaging structure.
Examples 4 to 9
Examples 4-9 were performed to prepare packaging structures using different substrates, packaging materials, plasma activated gases, and plasma deposition chemistries, respectively.
The base materials used in examples 4 to 9 were a copper lead frame, an aluminum pad, a polyimide substrate, an ethyl orthosilicate coating base material, a silicon oxide base material, and a silicon nitride base material, respectively, in this order; the packaging materials are respectively a plastic packaging material, epoxy resin, polyamide, polyester, a plastic packaging material and epoxy resin in sequence; the gases for plasma activation on at least a part of the surface of the substrate are respectively: nitrogen, carbon monoxide, carbon dioxide, hydrogen, argon and helium; the chemicals used for plasma deposition on at least a portion of the surface of the substrate are compounds 4-9, respectively, in that order.
The operation steps of examples 4 to 9 are similar to those of examples 1 to 3, and only the process parameters such as the degree of vacuum of the back surface, the radio frequency power of the excited plasma, the pulse voltage frequency, the duty ratio and the like in each step are adjusted within the range described in the above technical scheme 7, so that the package structure is manufactured.
Comparative example
The base material is a copper lead frame, no coating is made on the surface of the base material, and the semiconductor element chip is subjected to epoxy resin plastic package at normal temperature after being pasted.
Evaluation of Performance
1. Method of producing a composite material
The performance evaluation experiment adopts ultrasonic scanning (C-SAM) commonly used in the packaging technical field to detect whether the interior of the packaging structure has a layering phenomenon. The detection method utilizes the characteristics of different reflection rates and energy of ultrasonic waves and materials with different densities to realize the detection of the layering phenomenon.
Specifically, the steps and principles of ultrasonic scanning detection are as follows: the pulse generator generates signal pulses to excite the piezoelectric transducer, and ultrasonic waves with specific frequency are generated by the transducer and are propagated to the encapsulated sample through a coupling medium (such as deionized water). Ultrasonic waves require a uniform and continuous medium during propagation and thus will reflect when encountering different media. If delamination occurs inside the package structure, the discontinuous interface at the delamination may interfere with the ultrasound signal propagation or cause the ultrasound signal to be reflected. The sensor transmits ultrasonic waves, receives the ultrasonic waves reflected by the interface, and finally obtains a high-resolution ultrasonic image after signal processing, wherein the image contains information of each point of the ultrasonic scanning detection layer of the packaged sample. Whether layering occurs inside the packaging structure can be judged through the image. And calculating the layering proportion according to the percentage of the number of the layering phenomena in a certain number of packaging structures.
2. Evaluation results
The bonding force between the base material and the molding compound was evaluated in the package structures prepared according to examples 1 to 9 of the present invention (100 test package samples were prepared for each example) and the package structures prepared according to comparative examples (100 test package samples were prepared according to the method of comparative example) according to the method of the above 1, and the results are shown in table 2 below.
Table 2: results of evaluating the performance of the package structures of examples and comparative examples (n ═ 100)
The lamination ratio of the package structures prepared according to the comparative examples is 64%, and the lamination ratios of the package structures prepared according to the examples 1 to 9 are all reduced to below 1%, and the experimental data show that the plasma deposition layer provided by the invention can effectively improve the bonding force between the base material and the plastic packaging material.
Claims (16)
1. A method of packaging for bonding a substrate to a packaging material,
the substrate is at least one of a copper lead frame, an aluminum bonding pad, a silicon oxide substrate and a silicon nitride substrate, at least one part of the surface of the substrate is exposed to plasma, at least one part of the surface of the substrate is subjected to plasma treatment,
in the plasma treatment, a gas forming a plasma contains at least a compound represented by the formula (I),
wherein the content of the first and second substances,
R1and R3Each independently selected from hydrogen, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, or C6-C10 halogen substituted aryl;
R2selected from C1-C10 alkylene, C1-C10 haloalkylene, or C6-C10 halogen substituted arylene;
R4、R5and R6Each independently selected from hydrogen, chlorine, bromine, iodine, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, C6-C10 halogen-substituted aryl or-O (CH)2)nY, wherein: n is an integer from 1 to 10, Y is hydrogen or methyl;
x is selected from amino, methylamino, dimethylamino, diethylamino, acetylamino, and benzyloxycarbonylamino.
2. The method of packaging of claim 1,
the plasma treatment includes at least plasma deposition in which a gas forming a plasma contains at least the compound represented by the chemical formula (I).
3. The method of packaging of claim 1,
R1and R3Each independently hydrogen or C1-C10 alkyl;
R2is C1-C10 alkylene;
R4、R5and R6Each independently of the others hydrogen, C1-C10 alkyl or-O (CH)2)nY, wherein: n is an integer from 1 to 4, Y is hydrogen or methyl;
x is amino.
4. The method of packaging of claim 1,
the compound represented by the formula (I) is selected from:
5. the method of packaging of claim 2,
the plasma treatment further comprises plasma activation prior to the plasma deposition, wherein a gas forming the plasma comprises at least one of oxygen, nitrogen, carbon monoxide, carbon dioxide, hydrogen, argon or helium.
6. The method of packaging of claim 5,
in the plasma activation, a gas forming a plasma at least contains oxygen or argon.
7. The method of packaging of claim 2,
the vacuum degree of the back bottom of the plasma activation and plasma deposition is 0.1-10000 Pa;
in the plasma activation, the radio frequency power for exciting the plasma is 10-10000W, the pulse voltage frequency is 1-10000Hz, and the duty ratio is 1-100%;
in the plasma deposition, the radio frequency power for exciting the plasma is 1-10000W, the frequency of pulse voltage is 1-1000KHz, and the duty ratio is 1-100%.
8. The method of packaging according to claim 7,
the vacuum degree of the back bottom of the plasma activation and plasma deposition is 1-100 Pa;
in the plasma activation, the radio frequency power for exciting the plasma is 50-800W, the pulse voltage frequency is 50-150Hz, and the duty ratio is 50-100%;
in the plasma deposition, the duty ratio of pulse voltage for exciting the plasma is 5-50%.
9. The method of packaging of claim 2, further comprising:
mounting a semiconductor element on the substrate before or after the steps of sequentially performing plasma activation and plasma deposition on at least a part of the surface of the substrate.
10. The method of packaging of claim 9, further comprising:
bonding at least a portion of the surface of the substrate with the encapsulating material after sequentially performing the steps of plasma activation and plasma deposition on at least a portion of the surface of the substrate and mounting a semiconductor element on the substrate.
11. The method of packaging of claim 10,
at least a part of the surface of the substrate is bonded to the encapsulating material at normal temperature.
12. The method of packaging according to claim 10 or 11,
the packaging material is at least one of epoxy resin, polyamide and polyester.
13. A package structure, comprising:
a substrate carrying a semiconductor element, the substrate being at least one of a copper lead frame, an aluminum pad, a silicon oxide substrate and a silicon nitride substrate,
the material of the package is filled with a sealing material,
a plasma deposition layer is included between at least a portion of the surface of the substrate and the encapsulation material, the plasma deposition layer is formed by plasma deposition of a compound represented by formula (I),
wherein the content of the first and second substances,
R1and R3Each independently selected from hydrogen, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, or C6-C10 halogen substituted aryl;
R2selected from C1-C10 alkylene, C1-C10 haloalkylene, or C6-C10 halogen substituted arylene;
R4、R5and R6Each independently selected from hydrogen, chlorine, bromine, iodine, C1-C10 alkyl, C2-C10 alkenyl, C1-C10 haloalkyl, C2-C10 haloalkenyl, C6-C10 halogen substituted aryl or-O (CH)2)nY, wherein: n is an integer from 1 to 10, Y is hydrogen or methyl;
x is selected from amino, methylamino, dimethylamino, diethylamino, acetylamino, and benzyloxycarbonylamino.
14. The package structure of claim 13,
R1and R3Each independently hydrogen or C1-C10 alkyl;
R2is C1-C10 alkylene;
R4、R5and R6Each independently of the others hydrogen, C1-C10 alkyl or-O (CH)2)nY, wherein: n is an integer from 1 to 4, Y is hydrogen or methyl;
x is amino.
15. The package structure of claim 13,
the compound represented by the formula (I) is selected from:
16. the encapsulation structure according to any one of claims 13 to 15,
the packaging material is at least one of epoxy resin, polyamide and polyester.
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