CN108919420A - A kind of sulphur system waveguiding structure applied to middle infrared band - Google Patents
A kind of sulphur system waveguiding structure applied to middle infrared band Download PDFInfo
- Publication number
- CN108919420A CN108919420A CN201810782753.0A CN201810782753A CN108919420A CN 108919420 A CN108919420 A CN 108919420A CN 201810782753 A CN201810782753 A CN 201810782753A CN 108919420 A CN108919420 A CN 108919420A
- Authority
- CN
- China
- Prior art keywords
- layer
- low
- index
- optical transport
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12085—Integrated
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Glass Compositions (AREA)
Abstract
A kind of sulphur system waveguiding structure applied to middle infrared band, it is characterised in that：Including substrate, buffer layer, low-index layer and optical transport layer, the buffer layer is located on substrate, the low-index layer is located on the buffer layer, and the optical transport layer is located on the low-index layer, the sulfide film layer that the low-index layer and optical transport layer are prepared for chalcogenide glass, the refractive index of the buffer layer is less than the refractive index of the low-index layer, and the refractive index of the low-index layer is less than the refractive index of the optical transport layer.The advantage of the invention is that the Chalcogenide films of different refractivity are prepared using a variety of sulphur based materials using the waveguiding structure, to adjust the ranges of indices of refraction of waveguide by the material for changing double-layer films.Additionally by the size for adjusting double-layer films, waveguide is made to meet single mode condition, mode leakage is avoided, so that transmission loss as small as possible is obtained, so that the sulphur system waveguiding structure has broad application prospects in middle infrared band.
Description
Technical field
The present invention relates to a kind of waveguiding structures, more particularly to a kind of sulphur system waveguiding structure.
Background technique
Waveguide refers to a kind of device that electromagnetic wave is transmitted in microwave or optical band, is used for radio communication, radar, navigation
Equal fields.
Chalcogenide glass is by tri- kinds of elements of S, Se, Te of group via in the periodic table of elements and other if any Ge, Ga, As, Sb
A kind of infrared transparent glass that grade metallic elements are formed (infrared transmission range can be to 20 microns).Chalcogenide glass also has high refraction
Rate, high rear-earth-doped ability, great optical nonlinearity and light sensitive characteristic, these features make chalcogenide glass optical waveguide become integrated
The important developing direction in photon field.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of adjustable refractive index ranges that can expand waveguide, and
There is the sulphur system waveguiding structure of broad prospect of application in middle infrared band.
The present invention solves technical solution used by above-mentioned technical problem：A kind of sulphur system wave applied to middle infrared band
Guide structure, it is characterised in that：Including substrate, buffer layer, low-index layer and optical transport layer, the buffer layer is located on substrate,
The low-index layer is located on the buffer layer, and the optical transport layer is located on the low-index layer, the low-refraction
Layer and optical transport layer are the sulfide film layer of chalcogenide glass preparation, and the refractive index of the buffer layer is less than the low-refraction
The refractive index of layer, the refractive index of the low-index layer are less than the refractive index of the optical transport layer.
Preferably, the ranges of indices of refraction of the low-index layer is 2-2.2, and the refractive index of the optical transport layer is 2.4 or more
Preferably, the width of the substrate is 15 μm -20 μm, with a thickness of 2500nm；The width of the buffer layer be 15 μm-
20 μm, with a thickness of 2500nm；The width of the low-index layer is 5 μm -10 μm, with a thickness of 800nm-1000nm；The light passes
The width of defeated layer is 5 μm -10 μm, with a thickness of 500nm-600nm.
Preferably, the material of the low-index layer and optical transport layer is germanium sulfide glass, arsenic trisulphide glass, arsenic selenide glass
Glass, germanium antimony selenium glass, germanium antimony sulphur glass or selenizing antimonial glass.
Preferably, the substrate is the common substrate of integrated photonics, and the material of the buffer layer includes various than vulcanization
The low optically transparent material of object glass refraction.
Compared with the prior art, the advantages of the present invention are as follows use the waveguiding structure that a variety of sulphur based materials is used to prepare not
With the Chalcogenide films of refractive index, to adjust the ranges of indices of refraction of waveguide by the material for changing double-layer films.Additionally by
The size for adjusting double-layer films, makes waveguide meet single mode condition, avoids mode leakage, to obtain transmission damage as small as possible
Consumption, so that the sulphur system waveguiding structure has broad application prospects in middle infrared band.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the waveguide of the embodiment of the present invention.
Fig. 2 is the transmitance figure of sulphur based material used in the embodiment of the present invention.
Fig. 3 is the ideograph of the emulation of the waveguide in the embodiment of the present invention one, and the wavelength wherein transmitted in waveguide is 4.8 μ
M, H1=0.8 μm, H2=1.5 μm, W1=W2=10 μm.
Fig. 4 is the ideograph of the emulation of the waveguide in the embodiment of the present invention one, and the wavelength wherein transmitted in waveguide is 4.8 μ
M, H1=0.8 μm, H2=1.5 μm, W1=W2=20 μm.
Specific embodiment
The present invention will be described in further detail below with reference to the embodiments of the drawings.
The embodiment of the invention provides a kind of waveguides, and referring to Fig. 1, which includes substrate 101, buffer layer 102, low refraction
Rate layer 103 and optical transport layer 104.The buffer layer 102 is located on substrate 101, and the low-index layer 103 is located at the buffering
On layer 102, the low-index layer 103 and optical transport layer 104 are the sulfide film layers prepared by chalcogenide glass, described
Optical transport layer 104 is located on the low-index layer 103.The refractive index of the buffer layer 102 is less than the low-index layer 103
Refractive index, the refractive index of the low-index layer 103 is less than the refractive index of the optical transport layer 104, the low-index layer
103 ranges of indices of refraction is 2-2.2, and the refractive index of the optical transport layer 104 is 2.4 or more.
And as shown in Figure 1, the width of the low-index layer 103 is W2, with a thickness of H2, the width of the optical transport layer 104
For W1, with a thickness of H1.The width of the substrate 101 is 15 μm -20 μm, with a thickness of 2500nm；The width of the buffer layer 102 is 15
μm -20 μm, with a thickness of 2500nm；The width W2 of the low-index layer is 5 μm -10 μm, and thickness H2 is 800nm-1000nm；Institute
The width W1 for stating optical transport layer 104 is 5 μm -10 μm, and thickness H1 is 500nm-600nm.
Wherein, the shape of the waveguiding structure is strip or carinate etc..In one embodiment, the substrate 101
Material is the common substrate of integrated photonics, such as silicon etc..The material of the buffer layer 102 includes various than chalcogenide glass folding
Penetrate the low optically transparent material of rate, such as silica, silicon nitride.The low-index layer 103 and optical transport layer 104 are by optics
Glassy chalcogenide glass material is made, such as germanium sulfide glass, arsenic trisulphide glass, arsenic triselenide glass, germanium antimony selenium glass, germanium antimony sulphur glass
Glass or selenizing antimonial glass etc..
As shown in Figure 2 is the transmitance schematic diagram for the material that can be used in waveguiding structure of the invention, wherein material
Including silica, silicon, arsenones, arsenic selenide, germanium antimony selenium, germanium antimony sulphur.Waveguiding structure of the invention, using low-refraction sulphur system
Glass replaces the infrared bonding chip material in the lighttight traditional Si O2 sacrificial layer material of middle infrared band and CaF2, MgF2 etc.
Material, the non crystalline structure characteristic of chalcogenide glass allow to single-chip integration and ask in substantially any substrate regardless of Lattice Matching
Topic, and can be compatible with silica-base material and traditional cmos process, therefore chalcogenide glass can be bonded with substrate height and not have to consider
The influence of brilliant key, and two layers of Chalcogenide films is prepared using the different coloured glaze based material of refractive index, it can be adjusted according to sulphur based material
Required ducting layer effective refractive index makees the constraint of incident optical energy by the variation enhancing waveguiding structure of effective refractive index
With the application in middle infrared sensing field is expanded in the flexibility of raising waveguiding structure design.
And as shown in figure 3, for the schematic diagram that is emulated in simulation software of waveguiding structure of the embodiment, wherein passing
The wavelength lost is 4.8 μm, H1=0.8 μm, H2=1.5 μm, W1=W2=10 μm.
In Fig. 3, what X and Y were represented is the size of waveguide, and unit is micron (μm), and as can be seen from Figure 3 waveguiding structure is big
The height and width of cause.
Fig. 4 is the schematic diagram that the waveguiding structure of the embodiment is emulated in simulation software, wherein the wavelength of transmission light
It is 4.8 μm, H1=0.8 μm, H2=1.5 μm, W1=W2=20 μm.What X and Y was represented is the size of waveguide, and unit is micron (μ
M), the as can be seen from Figure 4 general height and width of waveguiding structure.
It as shown in the table, is the list of the loss of the waveguiding structure simulation result of different dimensional structures.
| H1(μm) | H2(μm) | W1(μm) | W2(μm) | Los(dB/cm) |
| 0.8 | 1.5 | 20 | 20 | 0.01585 |
| 0.8 | 1 | 20 | 20 | 0.0163 |
| 0.8 | 1 | 10 | 10 | 0.054315 |
| 0.8 | 0.8 | 20 | 20 | 0.089754 |
| 0.8 | 0.8 | 10 | 10 | 0.09124 |
| 0.8 | 0.8 | 5 | 5 | 0.10902 |
| 0.6 | 1 | 10 | 10 | 0.24370 |
| 0.6 | 0.8 | 10 | 10 | 0.39367 |
| 0.6 | 0.8 | 5 | 5 | 0.47351 |
| 0.6 | 0.6 | 5 | 5 | 0.81696 |
| 0.5 | 0.6 | 5 | 5 | 1.8411 |
| 0.5 | 0.7 | 5 | 5 | 1.3988 |
Embodiment 2：
This embodiment offers another waveguides, and wherein the material of substrate 101 is silicon, and buffer layer 102 uses silica,
2.5 μm of thickness, low-index layer 103 is germanium sulfide glass material, and with a thickness of 800nm-1000nm, width is 5 μm -10 μm, light
Transport layer 104 uses germanium antimony selenium material, and with a thickness of 500nm-600nm, width is 5 μm -10 μm.
A kind of waveguiding structure provided through the embodiment of the present invention first has layer of silicon dioxide conduct in single crystal layer-of-substrate
Buffer layer has low-refraction Chalcogenide films, such as GeSbS, GeS as sacrificial layer, i.e. low-index layer, sacrificial on the buffer layer
High refractive index Chalcogenide films are plated again on domestic animal layer, if GeSbSe is as waveguide transmission layer.It is replaced using low-refraction chalcogenide glass
In infrared lighttight traditional Si O2Sacrificial layer material and CaF2、MgF2The infrared bonding wafer material in is because at this stage
The realization of infrared photon device be largely dependent upon using wafer bonding techniques by crystalline state host material adhere in it is infrared
In transparent substrates, this mode not only substantially increases the processing complexity of device, but also is unfavorable for the extensive collection of device
At, and the non crystalline structure characteristic of chalcogenide glass allows to single-chip integration and asks in substantially any substrate regardless of Lattice Matching
Topic, and can be compatible with silica-base material and traditional cmos process.
Simultaneously as its excellent chemical stability makes it that can form stoichiometry or non-stoichiometry group with other elements
At glass, and flexible component proportion makes it have the continuously adjustable advantage of electro-optical properties, therefore a variety of sulphur can be used
Based material prepares the Chalcogenide films of different refractivity, to adjust the refractive index of waveguide by the material for changing double-layer films
Range.Additionally by the size for adjusting double-layer films, waveguide is made to meet single mode condition, mode leakage is avoided, to be use up
Possible small transmission loss, so that the sulphur system waveguiding structure has broad application prospects in middle infrared band.
Claims (5)
1. a kind of sulphur system waveguiding structure applied to middle infrared band, it is characterised in that：Including substrate (101), buffer layer
(102), low-index layer (103) and optical transport layer (104), the buffer layer (102) are located on substrate (101), the low folding
Rate layer (103) to be penetrated to be located on the buffer layer (102), the optical transport layer (104) is located on the low-index layer (103),
The low-index layer (103) and optical transport layer (104) are the sulfide film layer of chalcogenide glass preparation, the buffer layer
(102) refractive index is less than the refractive index of the low-index layer (103), and the refractive index of the low-index layer (103) is less than
The refractive index of the optical transport layer (104).
2. being applied to the sulphur system waveguiding structure of middle infrared band as described in claim 1, it is characterised in that：The low-refraction
The ranges of indices of refraction of layer (103) is 2-2.2, and the refractive index of the optical transport layer (104) is 2.4 or more
3. being applied to the sulphur system waveguiding structure of middle infrared band as claimed in claim 1 or 2, it is characterised in that：The substrate
(101) width is 15 μm -20 μm, with a thickness of 2500nm；The width of the buffer layer (102) is 15 μm -20 μm, with a thickness of
2500nm；The width of the low-index layer (103) is 5 μm -10 μm, with a thickness of 800nm-1000nm；The optical transport layer
(104) width is 5 μm -10 μm, with a thickness of 500nm-600nm.
4. being applied to the sulphur system waveguiding structure of middle infrared band as described in claim 1, it is characterised in that：The low-refraction
The material of layer (103) and optical transport layer (104) is germanium sulfide glass, arsenic trisulphide glass, arsenic triselenide glass, germanium antimony selenium glass, germanium
Antimony sulphur glass or selenizing antimonial glass.
5. being applied to the sulphur system waveguiding structure of middle infrared band as described in claim 1, it is characterised in that：The substrate
It (101) is the common substrate of integrated photonics, the material of the buffer layer (102) includes various lower than chalcogenide glass refractive index
Optically transparent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810782753.0A CN108919420A (en) | 2018-07-17 | 2018-07-17 | A kind of sulphur system waveguiding structure applied to middle infrared band |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810782753.0A CN108919420A (en) | 2018-07-17 | 2018-07-17 | A kind of sulphur system waveguiding structure applied to middle infrared band |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108919420A true CN108919420A (en) | 2018-11-30 |
Family
ID=64414489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810782753.0A Pending CN108919420A (en) | 2018-07-17 | 2018-07-17 | A kind of sulphur system waveguiding structure applied to middle infrared band |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108919420A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111273396A (en) * | 2020-03-13 | 2020-06-12 | 中山大学 | Sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering and preparation method thereof |
| CN112835142A (en) * | 2019-11-22 | 2021-05-25 | 南京大学 | Lithium niobate thin film waveguide, preparation method thereof and optical parametric oscillator device |
| CN113917573A (en) * | 2021-09-27 | 2022-01-11 | 中国建筑材料科学研究总院有限公司 | Amorphous infrared film system structure and preparation method thereof |
| CN116430515A (en) * | 2023-04-17 | 2023-07-14 | 中山大学 | Waveguide device based on sulfide and lithium niobate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2035594A (en) * | 1978-11-25 | 1980-06-18 | Univ Dundee | Light guide-light modifying device connector |
| CN102066997A (en) * | 2008-04-18 | 2011-05-18 | 索尼达德克奥地利股份公司 | Method for manufacturing an optical waveguide, optical waveguide, and sensor arrangement |
| CN104076439A (en) * | 2014-06-19 | 2014-10-01 | 清华大学 | Waveguide and preparation method thereof |
| CN105549152A (en) * | 2016-01-22 | 2016-05-04 | 宁波大学 | Te-base total-chalcogenide optical waveguide preparation method |
| CN105911013A (en) * | 2016-04-18 | 2016-08-31 | 宁波大学 | A chalcogenide glass thin-film biosensor chip used for molecular detection and a preparing method thereof |
-
2018
- 2018-07-17 CN CN201810782753.0A patent/CN108919420A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2035594A (en) * | 1978-11-25 | 1980-06-18 | Univ Dundee | Light guide-light modifying device connector |
| CN102066997A (en) * | 2008-04-18 | 2011-05-18 | 索尼达德克奥地利股份公司 | Method for manufacturing an optical waveguide, optical waveguide, and sensor arrangement |
| CN104076439A (en) * | 2014-06-19 | 2014-10-01 | 清华大学 | Waveguide and preparation method thereof |
| CN105549152A (en) * | 2016-01-22 | 2016-05-04 | 宁波大学 | Te-base total-chalcogenide optical waveguide preparation method |
| CN105911013A (en) * | 2016-04-18 | 2016-08-31 | 宁波大学 | A chalcogenide glass thin-film biosensor chip used for molecular detection and a preparing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 陈昱等: "硫系玻璃光波导研究进展", 《激光与光电子学进展》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112835142A (en) * | 2019-11-22 | 2021-05-25 | 南京大学 | Lithium niobate thin film waveguide, preparation method thereof and optical parametric oscillator device |
| CN111273396A (en) * | 2020-03-13 | 2020-06-12 | 中山大学 | Sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering and preparation method thereof |
| CN111273396B (en) * | 2020-03-13 | 2021-04-02 | 中山大学 | Sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering and preparation method thereof |
| CN113917573A (en) * | 2021-09-27 | 2022-01-11 | 中国建筑材料科学研究总院有限公司 | Amorphous infrared film system structure and preparation method thereof |
| CN116430515A (en) * | 2023-04-17 | 2023-07-14 | 中山大学 | Waveguide device based on sulfide and lithium niobate |
| CN116430515B (en) * | 2023-04-17 | 2024-01-19 | 中山大学 | Waveguide device based on sulfide and lithium niobate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108919420A (en) | A kind of sulphur system waveguiding structure applied to middle infrared band | |
| CN108415122B (en) | Broadband dispersion control waveguide and control method | |
| CN112987176B (en) | Two-dimensional topological photonic crystal routing device based on nonlinear regulation and control and implementation method | |
| Gonzalez et al. | Bio-inspired, sub-wavelength surface structures for ultra-broadband, omni-directional anti-reflection in the mid and far IR | |
| CN105974614A (en) | Mach-Zehnder optical modulator chip structure adopting ridge waveguide and preparation process thereof | |
| Yao et al. | All-optical logic gates using dielectric-loaded waveguides with quasi-rhombus metasurfaces | |
| CN106199837A (en) | A kind of Graphene mid-infrared light router based on fluoride waveguide or chalcogenide glass waveguide | |
| CN104076439A (en) | Waveguide and preparation method thereof | |
| Yang et al. | Topologically protected Mach–Zehnder interferometer | |
| CN103048844B (en) | Optimizing method for slow light characteristic based on liquid filled photonic crystal groove waveguide | |
| Yang et al. | Design of a non-Hermitian on-chip mode converter using phase change materials | |
| Loosen et al. | Approach for the production chain of printed polymer optical waveguides–an overview | |
| Parker et al. | Glass, optics and IYOG: opinion | |
| Chowdhary et al. | Infrared-blocking plasmonic meta-glass for energy-saving passive windows | |
| Dhuey et al. | Three-dimensional woodpile photonic crystals for visible light applications | |
| Gao et al. | Electro-optic modulator based on a photonic crystal slab with electro-optic polymer cladding | |
| Righini et al. | Flexible photonics: Where are we now? | |
| CN102608700A (en) | Hybrid slit optical waveguide | |
| Liang et al. | Fabrication and optical performance research of VO 2/SiO 2/VO 2 composite spherical structure films | |
| Park et al. | Long range surface plasmon polariton waveguides at 1.31 and 1.55 μm wavelengths | |
| Hammadi et al. | Comparative investigation of graded index optical fiber characteristics by using different materials | |
| Stroganov et al. | Silicon nitride PICs platform development from a foundry perspective: from concepts to real applications | |
| Amemiya et al. | GaInAsP/InP-based optical modulator consisting of gap-surface-plasmon-polariton waveguide: theoretical analysis | |
| Xin et al. | Tapered SU8 waveguide for evanescent sensing by single-step fabrication | |
| CN208795877U (en) | A kind of mixing plasma waveguide of the long-range coated by dielectric based on molybdenum disulfide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181130 |