CN111273396A - Sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering and preparation method thereof - Google Patents
Sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering and preparation method thereof Download PDFInfo
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
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- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12061—Silicon
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
Abstract
The invention belongs to the technical field of semiconductor devices, and particularly relates to a sulfide-silicon nitride suspended waveguide design capable of realizing forward Brillouin scattering and a preparation method thereof. The sulfide-silicon nitride suspended waveguide comprises a silicon substrate, a silicon oxide layer, a silicon nitride film layer and a sulfide film layer from bottom to top in sequence; wherein the silicon oxide layer under the waveguide is partially etched to present a suspended structure. The invention provides a sulfide-silicon nitride suspended waveguide structure capable of realizing forward Brillouin scattering, and the introduction of the silicon nitride structure plays a role in supporting a chalcogenide filmThe method overcomes the difficulties that sulfides are soft and are difficult to realize suspension, simultaneously, compared with sulfides, silicon nitride has smaller refractive index and larger acoustic velocity difference, is beneficial to realizing the simultaneous limitation of a light field and a transverse sound field, and the forward Brillouin gain coefficient obtained by simulation is 1415m‑1W‑1The possibility that the structure can be used for realizing forward stimulated Brillouin scattering and optical mechanical application is proved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering and a preparation method thereof.
Background
Stimulated brillouin scattering has wide application in the fields of microwave photon filters, microwave signal source generation, fast and slow light, optical storage, narrow linewidth lasers and the like, but most of the early researches are based on traditional backward brillouin scattering. With the development of on-chip integrated devices, brillouin integrated photonics is gaining more and more attention. Brillouin integrated photonics extends the mechanism of brillouin scattering, particularly forward brillouin. Compared with backscattering, the scattering mechanism takes part in transverse phonons, is applied to the fields of distributed sensing, Brillouin lasers, cavity enhanced amplifiers, injection locking lasers and the like, and forward Brillouin can sense the difference of the acoustic resistance properties of the environment, so that the scattering mechanism has important potential application value in the fields of distributed acoustic resistance sensing such as ocean detection, pollutant monitoring, leakage detection and the like, and more new application scenes are gradually explored.
At present, a material system based on-chip forward Brillouin scattering is mainly silicon-based, acoustic and optical simultaneous local areas are realized in a sub-wavelength fiber core structure by suspending a waveguide, but silicon has the characteristics of strong two-photon absorption, free carrier absorption and the like near 1550 nanometers, and simultaneously parameters such as frequency shift amount, line width and the like of Brillouin are very sensitive to the size of a silicon-based device, the change of nanometer size can cause great influence on the silicon-based device, and the change greatly limits the achievable gain and performance of the device, so that the search for other material platforms capable of realizing Brillouin is very necessary. Sulfide is widely applied in the backward Brillouin integration field due to the properties of excellent acousto-optic quality factor, negligible two-photon absorption and the like, but no report about forward Brillouin exists. The key point for realizing the forward Brillouin scattering lies in the limitation on transverse phonons, a suspension structure is generally adopted, but sulfides are soft, and the difficulty in preparing the suspension structure is high.
Disclosure of Invention
The invention provides a sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering and a preparation method thereof to overcome the defects in the prior art, and can realize simultaneous limitation on an optical field and an acoustic field.
In order to solve the technical problems, the invention adopts the technical scheme that: a sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering is composed of a silicon substrate, a silicon oxide layer, a silicon nitride film layer and a sulfide film layer from bottom to top in sequence; both sides of the sulfide thin film layer are etched with ridge-shaped structures of chalcogenide waveguides; first air grooves are etched on the sulfide thin film layer and located on two sides of the ridge-shaped structure; and a second air groove obtained by corrosion is arranged below the silicon nitride film layer and the sulfide film layer, and the first air groove is communicated with the second air groove.
Preferably, the thickness of the silicon substrate is 525 microns or 700 microns.
Preferably, the thickness of the silicon oxide layer is 2 microns to 3 microns.
Preferably, the silicon nitride film layer is positioned on the silicon oxide layer and is grown by a chemical vapor deposition technology, and the thickness of the silicon nitride film layer is 100 nm-200 nm.
Preferably, the sulfide thin film layer is positioned on the silicon nitride thin film layer and is prepared by a thermal evaporation method, the thickness of the sulfide thin film layer is 300 nanometers to 500 nanometers, the width of a ridge structure of the chalcogenide waveguide is 1 micrometer to 3 micrometers, and the etching depth is 200 nanometers to 400 nanometers.
Preferably, the width of the first air groove is 2-3 microns; the width of the second air groove is 6-10 microns.
The invention also provides a preparation method of the sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering, which comprises the following steps:
s1, growing a silicon nitride film layer with the thickness of about 100-200 nanometers on a silicon substrate layer and a silicon oxide layer substrate by adopting a chemical vapor deposition method;
s2, evaporating a 300-500 nanometer sulfide thin film layer on the silicon nitride thin film layer by adopting a thermal evaporation method;
s3, etching a ridge structure of the chalcogenide waveguide on the sulfide thin film layer by using electron beam exposure and dry etching technologies, wherein the etching depth of the ridge structure of the chalcogenide waveguide is 200-400 nanometers, and the width of the ridge structure of the chalcogenide waveguide is 1-3 micrometers;
s4, etching the residual sulfide and silicon nitride thin film layers on the two sides of the ridge waveguide to the silicon oxide layer in the middle by using the electron beam exposure and dry etching technology again, wherein the etching width is 2-3 micrometers, and thus obtaining a first air groove;
s5, immersing the etched waveguide into a buffer solution of hydrofluoric acid, wherein the etching time is determined according to the concentration of the buffer solution until the upper-layer waveguide is etched to be suspended, and the width of a second air groove obtained through etching is 6-10 microns.
In the present invention, the chalcogenide and silicon nitride act as the core of the suspended waveguide, but since chalcogenide has a higher refractive index than silicon nitride (n)ChG～2.4，nSiNx2) so that the energy is mostly concentrated in the chalcogenide waveguide, the structure of the composite waveguide has the advantages of: (1) the sulfide waveguide is soft and is not easy to support when suspended, a silicon nitride film below the sulfide waveguide plays a supporting role in the structure, and the silicon nitride has a very low corrosion rate in a hydrofluoric acid buffer solution and can play a role in supporting the chalcogenide waveguide; (2) the suspended structure adopted by the scheme is beneficial to realizing the simultaneous limitation of the optical field and the transverse sound field, so that the forward Brillouin scattering research and application can be realized.
Compared with the prior art, the beneficial effects are:
1. the invention provides a sulfide-silicon nitride suspended waveguide structure capable of realizing forward Brillouin scattering and a preparation method thereof.
2. The invention has proposed a sulfide-silicon nitride unsettled waveguide structure and its preparation method that can realize forward stimulated Brillouin scattering, because the refractive index of the silicon nitride is relatively lower, most energy is still in the sulfide waveguide, and the acoustic velocity of the sulfide is about 2200m/s, the acoustic velocity of silicon nitride is 9000m/s, the great acoustic velocity difference can realize the limitation to the acoustic field, therefore the composite material structure can realize the limitation to optical field and acoustic field at the same time, can be used for realizing forward stimulated Brillouin scattering and application in the aspects such as photomechanical, etc.;
drawings
Fig. 1 is a schematic view of the overall structure of the present invention.
FIG. 2 is a flow chart of the preparation of the present invention.
Fig. 3 is a schematic view of the mode field distribution of the fundamental mode of the waveguide.
Figure 4 is a schematic diagram of a 45 mhz acoustic mode field distribution within a waveguide.
Detailed Description
The drawings are for illustration purposes only and are not to be construed as limiting the invention; for the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted. The positional relationships depicted in the drawings are for illustrative purposes only and are not to be construed as limiting the invention.
Example 1:
as shown in fig. 1, a sulfide-silicon nitride suspended waveguide capable of realizing forward brillouin scattering is composed of a silicon substrate 1, a silicon oxide layer 2, a silicon nitride thin film layer 3 and a sulfide thin film layer 4 from bottom to top in sequence; both sides of the sulfide thin film layer 4 are etched with ridge-shaped structures 7 of chalcogenide waveguides; a first air groove 6 is etched on the sulfide thin film layer 4, and the first air groove 6 is positioned on two sides of the ridge-shaped structure 7; and a second air groove 5 obtained by corrosion is arranged below the silicon nitride thin film layer 3 and the sulfide thin film layer 4, and the first air groove 6 is communicated with the second air groove 5.
Wherein, the thickness of the silicon substrate 1 is 525 microns or 700 microns. The thickness of the silicon oxide layer 2 is 2-3 microns. The silicon nitride film layer 3 is located on the silicon oxide layer 2 and is grown by a chemical vapor deposition technique, and the thickness is 100-200 nm. The sulfide thin film layer 4 is positioned on the silicon nitride thin film layer and is prepared by a thermal evaporation method, the thickness is 500 nanometers in 300-2 micrometers, the width of a ridge structure of the chalcogenide waveguide is 1-2 micrometers, and the etching depth is 400 nanometers in 200-2 micrometers. The width of the first air groove 6 is 2-3 micrometers; the width of the second air groove 5 is 6-10 microns.
Example 2
The invention also provides a preparation method of the sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering, which comprises the following steps of:
s1, growing a silicon nitride film layer 3 with the thickness of about 100-200 nanometers on a silicon substrate 1 layer and a silicon oxide layer 2 substrate by adopting a chemical vapor deposition method;
s2, evaporating a 300-500 nanometer sulfide thin film layer 4 on the silicon nitride thin film layer 3 by adopting a thermal evaporation method;
s3, etching a ridge structure 7 of the chalcogenide waveguide on the sulfide thin film layer 4 by using electron beam exposure and dry etching technologies, wherein the etching depth of the ridge structure 7 of the chalcogenide waveguide is 200-400 nanometers, and the width of the ridge structure is 1-2 micrometers;
s4, etching the residual sulfide and silicon nitride thin film layers 3 on the two sides of the ridge waveguide to the middle silicon oxide layer 2 again by using electron beam exposure and dry etching technologies, wherein the etching width is 2-3 micrometers, and thus obtaining a first air groove 6;
s5, immersing the etched waveguide into a buffer solution of hydrofluoric acid, wherein the etching time is determined according to the concentration of the buffer solution until the upper-layer waveguide is etched to be suspended, and the width of the second air groove 5 obtained through etching is 6-10 microns.
The preparation method comprises the following specific steps:
first, a film is prepared. Using a commercial silicon substrate 1 on which a 3 micron silicon oxide layer 2 is grown, a silicon nitride thin film layer 3 is first grown in an atmosphere of 300 c using an atmospheric pressure chemical vapor deposition method. The deposition time is about 8-15min, the deposition rate is about 14 nm/min, and the growth thickness is about 100 nm and 200 nm; and then evaporating the 300-500 nm sulfide thin film layer 4 on the silicon nitride thin film layer 3 by a thermal evaporation method, wherein the deposition rate is slow and is about 1A/s to ensure the uniformity and compactness of the thin film, after the deposition is finished, depositing 2-5 nm aluminum oxide on the sulfide thin film layer 4 by an Atomic Layer Deposition (ALD) method to play a role in protection, and then annealing the thin film for 13-15 hours at the temperature of 130-180 ℃.
The preparation of the waveguide is then carried out. The prepared film is exposed by using a progressive electron beam, the adopted electron glue is high-resolution positive glue ZEP520A, the property of the exposed part of the positive glue is changed and is easy to dissolve in a developing solution, the exposure dose is determined by the glue thickness, and after exposure and development are finished, the surface of the wafer is dried by a nitrogen gun. And then, carrying out dry etching on the waveguide, wherein etching gases are trifluoromethane and argon, and the roughness and the etching appearance of the etched side wall are influenced by the pressure intensity, the power, the gas flow and the like of the cavity together, so that parameters are adjusted to ensure that the etched side face is smooth as much as possible. And after etching, removing the residual electronic glue by using oxygen plasma in dry etching, repeating the previous processes of electron beam exposure and etching to etch the residual sulfide layer and silicon nitride layer on two sides of the ridge waveguide to the lower silicon oxide layer by using a dry method, immersing the waveguide into a buffered hydrofluoric acid solution, wherein the immersion time is determined by the concentration of a buffer solution, taking out the waveguide every 10 seconds to observe by using a microscope, judging whether the waveguide is completely corroded, and finally drying the surface by using a nitrogen gun to finish the preparation of the suspended waveguide.
In order to prove that the structure can be used for realizing forward Brillouin research, a finite element method is utilized to carry out mode simulation on the structure, and the gain coefficient of Brillouin is obtained through acousto-optic coupling superposition integral, wherein FIG. 3 is the electric field fundamental mode field distribution of the suspended waveguide, FIG. 4 is the acoustic mode of 45MH, the superposition integral of the electric field fundamental mode field distribution and the acoustic mode of the suspended waveguide can be calculated through the formula (1), and the gain coefficient is obtained to be 1415m-1W-11150m reported for larger than Si-based plate-1W-1The feasibility of this structure to achieve forward brillouin was demonstrated.
Wherein f is the density of the electric field force generated under the combined action of electrostriction and radiation pressure, omegaBU and Q respectively correspond to the frequency, displacement and quality factor of acoustic mode of sound field mode, vgs、νgpRespectively the group velocity of the stokes light and the pump light.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (7)
1. A sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering is characterized in that a silicon substrate (1), a silicon oxide layer (2), a silicon nitride film layer (3) and a sulfide film layer (4) are arranged from bottom to top in sequence; a ridge structure (7) of the chalcogenide waveguide is etched on the sulfide thin film layer (4); a first air groove (6) is etched on the sulfide thin film layer (4), and the first air groove (6) is positioned on two sides of the ridge-shaped structure (7); and a second air groove (5) obtained by corrosion is arranged below the silicon nitride thin film layer (3) and the sulfide thin film layer (4), and the first air groove (6) is communicated with the second air groove (5).
2. The chalcogenide-silicon nitride suspended waveguide according to claim 1, characterized in that the thickness of the silicon substrate (1) is 525 microns or 700 microns.
3. The chalcogenide-silicon nitride suspended waveguide according to claim 2, characterized in that the thickness of said silicon oxide layer (2) is comprised between 2 microns and 3 microns.
4. The chalcogenide-silicon nitride suspended waveguide according to claim 3, wherein the silicon nitride thin film layer (3) is located on the silicon oxide layer (2) and has a thickness of 100 nm to 200 nm.
5. The chalcogenide-silicon nitride suspended waveguide according to claim 3, wherein the chalcogenide thin film layer (4) is located on the silicon nitride thin film layer (3) and has a thickness of 300 nm to 500 nm, the width of the ridge structure (7) is 1 micron to 3 microns, and the etching depth is 200 nm to 400 nm.
6. The sulfide-silicon nitride suspended waveguide of claim 3, wherein the width of the first air slot (6) is 2-3 microns; the width of the second air groove (5) is 6-10 microns.
7. A preparation method of a sulfide-silicon nitride suspended waveguide capable of realizing forward Brillouin scattering is characterized by comprising the following steps:
s1, growing a silicon nitride film layer (3) with the thickness of about 100-200 nanometers on a silicon substrate (1) and a silicon oxide layer (2) by adopting a chemical vapor deposition method;
s2, evaporating a 300-500 nanometer sulfide thin film layer (4) on the silicon nitride thin film layer (3) by adopting a thermal evaporation method;
s3, etching a ridge structure (7) of the chalcogenide waveguide on the sulfide thin film layer (4) by using electron beam exposure and dry etching technologies, wherein the etching depth of the ridge structure (7) is 200-300 nanometers, and the width of the ridge structure is 1-3 micrometers;
s4, etching the sulfide and silicon nitride thin film layers (3) on two sides of the ridge structure of the sulfide thin film layer (4) to the silicon oxide layer (2) in the middle by adopting a dry etching technology, wherein the etching width is 2-3 micrometers, and thus obtaining a first air groove (6);
s5, immersing the etched waveguide into a buffer solution of hydrofluoric acid, wherein the etching time is determined according to the concentration of the buffer solution until the upper-layer waveguide is etched to be suspended, and the width of the second air groove (5) obtained through etching is 6-10 microns.
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| CN112269223A (en) * | 2020-12-22 | 2021-01-26 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Silicon-based wedge-shaped waveguide micro-ring cavity and preparation method thereof |
| CN113008302A (en) * | 2021-02-28 | 2021-06-22 | 南京航空航天大学 | Temperature and acoustic resistance double-parameter sensing method and device based on forward Brillouin scattering |
| CN113008302B (en) * | 2021-02-28 | 2021-11-23 | 南京航空航天大学 | Temperature and acoustic resistance double-parameter sensing method and device based on forward Brillouin scattering |
| CN113419364A (en) * | 2021-05-27 | 2021-09-21 | 香港理工大学深圳研究院 | Groove auxiliary type acousto-optic modulator based on lithium niobate film |
| CN113419364B (en) * | 2021-05-27 | 2022-08-12 | 香港理工大学深圳研究院 | Groove auxiliary type acousto-optic modulator based on lithium niobate film |
| CN113624992A (en) * | 2021-07-27 | 2021-11-09 | 南京邮电大学 | Electric pump acceleration sensor and preparation method thereof |
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