CN114530759A - Method for manufacturing surface plasmon laser - Google Patents
Method for manufacturing surface plasmon laser Download PDFInfo
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- CN114530759A CN114530759A CN202011206022.5A CN202011206022A CN114530759A CN 114530759 A CN114530759 A CN 114530759A CN 202011206022 A CN202011206022 A CN 202011206022A CN 114530759 A CN114530759 A CN 114530759A
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- surface plasmon
- layer
- magnetic field
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- coil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing a surface plasmon laser, which comprises the following steps: sequentially laminating a metal layer containing a magnetic substance, a dielectric layer and a gain layer on the substrate to form a surface plasmon part; forming a coil for generating a magnetic field on a surface of the substrate facing away from the surface plasmon part; wherein the surface plasmon portion is disposed within a magnetic field generated by the coil, the magnetic field direction of the magnetic field being parallel to a surface of the substrate facing the surface plasmon portion. The manufacturing method can enable the surface plasmon laser to have the nonreciprocal optical isolation characteristic.
Description
Technical Field
The invention relates to the technical field of semiconductor micro lasers, in particular to a manufacturing method of a surface plasmon laser with a nonreciprocal optical isolation characteristic.
Background
Surface plasmon lasers amplify surface plasmons through gain material around the medium, enabling the generation and manipulation of electromagnetic fields (optical fields) at deep sub-wavelength scales. Because the surface plasmon laser is not restricted by diffraction limit, the surface plasmon laser is an ideal light source for realizing a high-density on-chip integrated optical system, and has wide application prospect in the fields of high-speed optical communication, high-sensitivity biological detection, high-density data storage and the like.
The existing surface plasmon laser is essentially a reciprocal device, so that laser enters a resonant cavity due to the reflection of photonic units such as a connector and a filter in an integrated optical path system, the stability of the laser is interfered, the performance of the laser is deteriorated, and an additional optical isolation structure is required to be formed to ensure the unidirectional lasing of the laser. However, forming the optical isolation structure increases the size of the surface plasmon laser, and thus is disadvantageous for the integration of the plasmon laser.
Disclosure of Invention
Aiming at the defects of the prior art, the invention adopts the following technical scheme:
in an aspect of the present invention, there is provided a method of manufacturing a surface plasmon laser, the method including:
sequentially laminating a metal layer containing a magnetic substance, a dielectric layer and a gain layer on the substrate to form a surface plasmon part;
forming a coil for generating a magnetic field on a surface of the substrate facing away from the surface plasmon part;
wherein the surface plasmon portion is disposed within a magnetic field generated by the coil, the magnetic field direction of the magnetic field being parallel to a surface of the substrate facing the surface plasmon portion.
Preferably, the method of forming the coil comprises:
forming a seed layer on the surface of the substrate, which faces away from the surface plasmon part;
coating photoresist on the seed layer, and then carrying out exposure and development to form a coil pattern layer so as to expose a partial region of the seed layer;
growing a metal material on the partial region, wherein the growing thickness of the metal material is smaller than the thickness of the coil pattern layer;
and stripping the coil pattern layer, and removing the seed layer outside the partial area to expose the substrate.
Preferably, the refractive index of the dielectric layer is lower than the refractive index of the gain layer.
Preferably, the gain layer is made of one of a semiconductor nanowire, a semiconductor nanocrystal, a two-dimensional material.
Preferably, the metal layer is made of at least one of iron, cobalt, and nickel.
Preferably, the dielectric layer is made of one of silicon dioxide, magnesium difluoride, aluminum oxide and lithium fluoride.
Preferably, the substrate is made of one of silicon, mica, alumina, silica.
Preferably, the seed layer and the metal material grown on the partial region are made of copper or gold.
Preferably, the thickness of the dielectric layer is 1 nm-50 nm.
In another aspect of the present invention, there is provided a surface plasmon laser manufactured by the above manufacturing method.
After the surface plasmon laser is manufactured by the manufacturing method provided by the invention, as the metal layer of the surface plasmon laser contains magnetic substances, the surface plasmon laser generates a magneto-optical effect in a transverse magnetic field (namely, a magnetic field with the magnetic field direction parallel to the surface of the substrate facing the metal layer), so that the metal layer as a constituent part of the surface plasmon part becomes a magneto-optical medium, and the surface plasmon laser can pass through light in the forward direction and isolate light in the reverse direction, thereby realizing the surface plasmon laser, having nonreciprocal optical isolation characteristic even without an additional optical isolation structure, and being capable of unidirectionally exciting laser.
Drawings
Fig. 1 is a flow chart of fabrication of a surface plasmon laser according to an embodiment of the present invention;
fig. 2a to 2e are process diagrams of a coil of a surface plasmon laser according to an embodiment of the present invention;
fig. 3 is a schematic structural view of a surface plasmon laser according to an embodiment of the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the solution according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted, for example: specific circuit structures of the surface plasmon laser, specific circuit connection relations among the surface plasmon section, the magnetic field generation section, and the power supply, and the like.
As described in the background art, the current surface plasmon laser is essentially an anisotropic device, and an additional optical isolation structure is required to ensure unidirectional lasing of laser light. The process of forming the additional optical isolation structure can improve the manufacturing difficulty of the surface plasmon laser, and can also increase the overall size of the surface plasmon laser, thereby limiting the application range of the surface plasmon laser.
In view of the above problems, an embodiment of the present invention provides a method for manufacturing a surface plasmon laser, and the surface plasmon laser manufactured by the method has a non-reciprocal optical isolation characteristic, and the specific implementation manner is as follows.
As shown in fig. 1, the method for manufacturing a surface plasmon laser according to this embodiment includes:
step S1 is to form a surface plasmon section on the substrate 1. Specifically, a metal layer 2 containing a magnetic substance, a dielectric layer 3, and a gain layer 4 are sequentially stacked on the substrate 1. The substrate 1 is preferably made of one of silicon, mica, alumina and silica, and the metal layer 2 is made of at least one of iron, cobalt and nickel. The metal layer 2 contains an isomagnetic substance, and the isomagnetic substance may be at least one of an alloy, a ferrite, and an intermetallic compound. The thickness of the dielectric layer 3 is 1 nm-50 nm, the dielectric layer 3 is made of one of silicon dioxide, magnesium difluoride, aluminum oxide and lithium fluoride, and the gain layer 4 is made of one of a semiconductor nanowire, a semiconductor nanocrystal and a two-dimensional material. Wherein the refractive index of the medium layer 3 is lower than that of the gain layer 4.
Step S2, forming a coil for generating a magnetic field on the surface of the substrate 1 facing away from the surface plasmon part.
Wherein the surface plasmon part is placed in a magnetic field generated by the coil, the magnetic field direction of the magnetic field being parallel to the surface of the substrate 1 facing the surface plasmon part.
After the surface plasmon laser is manufactured by the manufacturing method provided by the embodiment, because the metal layer 2 of the surface plasmon laser contains magnetic substances, the surface plasmon laser generates a magneto-optical effect in a transverse magnetic field (i.e., a magnetic field with a magnetic field direction parallel to the surface of the substrate 1 facing the metal layer 2), so that the metal layer 2 serving as a constituent part of the surface plasmon part becomes a magneto-optical medium, and thus the surface plasmon laser can pass through light in a forward direction and isolate light in a reverse direction, and the surface plasmon laser can have a non-reciprocal optical isolation characteristic even without an additional optical isolation structure and can excite laser light in a single direction.
Moreover, compared with the existing surface plasmon laser, the surface plasmon laser manufactured by the manufacturing method of the embodiment does not need an additional optical isolation structure, so that when the surface plasmon laser is adopted to form an optical system, the integration efficiency is higher, and the application range of the surface plasmon laser is expanded.
Specifically, as shown in fig. 2a to 2e, the method of forming the coil 5 includes:
step S31, a seed layer 5a is formed on the surface of the substrate 1 facing away from the surface plasmon section. In particular, the seed layer 5a is made of copper or gold.
Step S32, coating photoresist 6 on the seed layer 5a, and then performing exposure and development to form a coil pattern layer 61 so as to expose a partial region of the seed layer 5 a.
Step S33, growing a metal material 5b on the partial region, wherein the growing thickness of the metal material 5b is smaller than the thickness of the coil pattern layer 61. Specifically, the metal material 5b is copper or gold.
Step S34, peeling off the coil pattern layer 61, and removing the seed layer 5a outside the partial region to expose the substrate 1, so as to form the coil 5.
In order to highlight the process of manufacturing the coil 5, fig. 2a to 2e only show the process of manufacturing the coil 5, and the surface plasmon section is omitted.
Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A method for manufacturing a surface plasmon laser, the method comprising:
sequentially laminating a metal layer containing a magnetic substance, a dielectric layer and a gain layer on the substrate to form a surface plasmon part;
forming a coil for generating a magnetic field on a surface of the substrate facing away from the surface plasmon part;
wherein the surface plasmon portion is disposed within a magnetic field generated by the coil, the magnetic field direction of the magnetic field being parallel to a surface of the substrate facing the surface plasmon portion.
2. The method of manufacturing according to claim 1, wherein the method of forming the coil comprises:
forming a seed layer on the surface of the substrate, which faces away from the surface plasmon part;
coating photoresist on the seed layer, and then carrying out exposure and development to form a coil pattern layer so as to expose a partial region of the seed layer;
growing a metal material on the partial region, wherein the growing thickness of the metal material is smaller than the thickness of the coil pattern layer;
and stripping the coil pattern layer, and removing the seed layer outside the partial area to expose the substrate.
3. The method of claim 1 or 2, wherein the refractive index of the dielectric layer is lower than the refractive index of the gain layer.
4. The method of claim 3, wherein the gain layer is made of one of semiconductor nanowires, semiconductor nanocrystals, and two-dimensional materials.
5. The method of claim 3, wherein the metal layer is made of at least one of iron, cobalt, and nickel.
6. The method of claim 3, wherein the dielectric layer is made of one of silicon dioxide, magnesium difluoride, aluminum oxide and lithium fluoride.
7. The method of claim 3, wherein the substrate is made of one of silicon, mica, alumina, and silica.
8. The manufacturing method according to claim 2, wherein the seed layer and the metal material grown on the partial region are made of copper or gold.
9. A surface plasmon laser produced by the production method according to any of claims 1 to 8.
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| CN202011206022.5A CN114530759B (en) | 2020-11-02 | 2020-11-02 | Method for manufacturing surface plasmon laser |
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| CN202011206022.5A CN114530759B (en) | 2020-11-02 | 2020-11-02 | Method for manufacturing surface plasmon laser |
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| CN114530759A true CN114530759A (en) | 2022-05-24 |
| CN114530759B CN114530759B (en) | 2023-04-07 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013405A (en) * | 2004-06-29 | 2006-01-12 | Canon Inc | Electromagnetic wave generating/sensing element and manufacturing method therefor |
| DE102008022830A1 (en) * | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Rays-emitting element, has upper surface plasmon excited in electrode via electronic operation of active area, where coloring material is excited via upper surface plasmon in electrode for radiation of rays |
| CN102664350A (en) * | 2012-03-09 | 2012-09-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Plasma excimer nanometer laser |
| CN103236643A (en) * | 2013-04-18 | 2013-08-07 | 北京大学 | One-way exciter with surface plasmons for wideband |
| US20140193301A1 (en) * | 2011-06-07 | 2014-07-10 | Nanyang Technological University | Method of generating a metamaterial, and a metamaterial generated thereof |
| CN109830886A (en) * | 2019-03-19 | 2019-05-31 | 北京工业大学 | A kind of nano plasma laser array and preparation method thereof of multi-cavity coupling enhancing |
| CN110835766A (en) * | 2019-11-19 | 2020-02-25 | 南京集芯光电技术研究院有限公司 | Surface plasmon enhanced InGaN/GaN multi-quantum well photoelectrode and preparation method thereof |
-
2020
- 2020-11-02 CN CN202011206022.5A patent/CN114530759B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006013405A (en) * | 2004-06-29 | 2006-01-12 | Canon Inc | Electromagnetic wave generating/sensing element and manufacturing method therefor |
| DE102008022830A1 (en) * | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Rays-emitting element, has upper surface plasmon excited in electrode via electronic operation of active area, where coloring material is excited via upper surface plasmon in electrode for radiation of rays |
| US20140193301A1 (en) * | 2011-06-07 | 2014-07-10 | Nanyang Technological University | Method of generating a metamaterial, and a metamaterial generated thereof |
| CN102664350A (en) * | 2012-03-09 | 2012-09-12 | 中国科学院苏州纳米技术与纳米仿生研究所 | Plasma excimer nanometer laser |
| CN103236643A (en) * | 2013-04-18 | 2013-08-07 | 北京大学 | One-way exciter with surface plasmons for wideband |
| CN109830886A (en) * | 2019-03-19 | 2019-05-31 | 北京工业大学 | A kind of nano plasma laser array and preparation method thereof of multi-cavity coupling enhancing |
| CN110835766A (en) * | 2019-11-19 | 2020-02-25 | 南京集芯光电技术研究院有限公司 | Surface plasmon enhanced InGaN/GaN multi-quantum well photoelectrode and preparation method thereof |
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| CN114530759B (en) | 2023-04-07 |
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