CN108917974B - OFDR-based silicon optical chip temperature measurement device and method - Google Patents
OFDR-based silicon optical chip temperature measurement device and method Download PDFInfo
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- CN108917974B CN108917974B CN201811060836.5A CN201811060836A CN108917974B CN 108917974 B CN108917974 B CN 108917974B CN 201811060836 A CN201811060836 A CN 201811060836A CN 108917974 B CN108917974 B CN 108917974B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 76
- 239000010703 silicon Substances 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000002168 optical frequency-domain reflectometry Methods 0.000 title claims abstract description 17
- 238000009529 body temperature measurement Methods 0.000 title claims description 8
- 239000013307 optical fiber Substances 0.000 claims abstract description 49
- 238000001228 spectrum Methods 0.000 claims abstract description 25
- 230000035559 beat frequency Effects 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 16
- 239000000835 fiber Substances 0.000 claims description 7
- 238000013480 data collection Methods 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 17
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a silicon optical chip temperature measuring device and method based on OFDR, wherein the device comprises a linear sweep frequency laser, an optical fiber beam splitter, an optical fiber circulator, a silicon optical chip, a spot-size converter, an optical fiber coupler, a photoelectric detector, a data acquisition card and a computer. The measuring method of the invention is based on the optical frequency domain reflection technology, the silicon optical chip to be measured is taken as a sensor, and light enters and exits the chip through a spot-size converter with a special structure. The change of temperature can cause the chip Rayleigh scattering spectrum to move, and the movement quantity is obtained by measuring the cross-correlation operation of the Rayleigh scattering spectrum (after the temperature change) and the reference spectrum (original temperature). The cross correlation peak deviation value is a shift amount corresponding to the temperature variation amount. The measuring mode has the characteristics of high spatial resolution and high precision, solves the problems that the sensor layout of the traditional sensing means is complex, the measuring result is easily influenced by the outside, and the like, and is particularly suitable for measuring the temperature of the micro silicon optical chip.
Description
Technical Field
The invention relates to the field of optical measurement, in particular to a silicon optical chip temperature measurement device and method based on OFDR.
Background
The silicon optical chip is integrated with a photoelectric conversion and transmission module, and data transmission is carried out through exchange of optical signals among the chips, so that compared with the currently used integrated circuit data transmission mode, the silicon optical chip has the characteristics of low loss, large transmission bandwidth, high transmission speed and the like, and plays an extremely critical role in various fields of optical communication, data centers, biology, national defense, intelligent automobiles, unmanned aerial vehicles and the like. Like a semiconductor chip, a silicon optical chip generates certain energy consumption when performing high-frequency operation and data transmission, so that the temperature of the chip is increased to influence the control and transmission quality of optical signals, and therefore, the real-time monitoring of the temperature of the chip is necessary. The conventional temperature sensing devices suffer from a number of disadvantages: for example, the electrical sensor is generally large in size and complex in structure, is difficult to integrate on a silicon optical chip with small size, has short service life and is easy to damage the chip due to frequent replacement; the special optical fiber is arranged on the surface of the chip as a sensor, so that on one hand, the chip is small in size, the optical fiber is difficult to arrange, and on the other hand, the measured temperature only reflects the temperature of the surface of the chip and cannot accurately reflect the temperature inside the chip, so that the measuring accuracy is low.
In addition, the cross-sectional area of the silicon optical chip is generally smaller than 1 μm, which is larger than the core diameter of a single-mode fiber by 8-10 μm, and the coupling problem of the optical fiber and the silicon optical chip prevents the application of a plurality of optical fiber sensing technologies in chip temperature measurement because of the extremely large loss generated when light enters the chip with small size from the optical fiber.
Disclosure of Invention
The invention aims to solve the technical problem that a silicon optical chip is difficult to be mounted with a temperature sensor to measure the silicon optical chip in the prior art, and provides a silicon optical chip temperature measuring device and method based on OFDR, wherein the silicon optical chip is used as the temperature sensor to directly measure the temperature of the silicon optical chip.
The technical scheme adopted for solving the technical problems is as follows:
the utility model provides a silicon optical chip temperature measuring device based on OFDR, including linear sweep frequency laser instrument, optical fiber beam splitter, optical fiber circulator, silicon optical chip, mode spot converter, fiber coupler, photoelectric detector, data acquisition card and computer, wherein:
the optical fiber beam splitter divides sweep laser output by the linear sweep laser into two paths, wherein one path is signal light, and the other path is reference light; the signal light enters the optical fiber circulator, and the reference light enters the optical fiber coupler;
the mode spot converter is connected between the optical fiber circulator and the silicon optical chip and is connected with the optical fiber circulator through a single mode optical fiber; the spot-size converter is a wedge-shaped body, one connecting end of the wedge-shaped body is a plane end, and the plane end is connected with the end part of the single-mode optical fiber; the other connecting end of the wedge-shaped body is a wire end, and the wire end is connected with the silicon optical chip;
the silicon optical chip is coupled with a single mode fiber through the mode spot converter, and signal light enters and exits the silicon optical chip through the mode spot converter; the Rayleigh scattering signals generated at each position on the silicon optical chip are returned to enter the optical fiber coupler along a path, and beat frequency interference is generated at the optical fiber coupler with reference light to generate beat frequency interference signals;
the photoelectric detector converts the beat interference signal into an electric signal;
the data acquisition card acquires beat frequency interference signals in the electric signals through multiple channels at the same time;
the computer is in data communication with the linear sweep laser and the data acquisition card, controls the linear sweep laser and the data acquisition card, and demodulates the acquisition signals.
The invention also provides a silicon optical chip temperature measurement method based on the device, which comprises the following steps:
dividing laser emitted by a linear scanning laser into two beams, wherein one beam is used as reference light, and the other beam is used as signal light;
the signal light enters the silicon optical chip through the mode spot converter, rayleigh scattering light generated at each position of the silicon optical chip returns along a path, and beat frequency interference is generated between the signal light and the reflected reference light through the optical fiber coupler, so that beat frequency interference signals are generated;
the beat frequency interference signals are converted into electric signals through a photoelectric detector, the electric signals are collected by a data collection card, and the collected signals are demodulated through a computer;
the specific demodulation process comprises the following steps:
converting the reference signal and the measurement signal to a distance domain through non-uniform fast fourier transform;
dividing the distance domain signal into a plurality of signals by using a moving window with a width deltax;
converting a plurality of distance domain signals of the measurement signal and the reference signal into a wavelength domain through non-uniform fast Fourier transform to obtain a Rayleigh scattering spectrum of the measurement light and the reference light at each position of the silicon optical chip;
and carrying out cross-correlation operation on the Rayleigh scattering spectrum of the measuring light and the reference light to obtain cross-correlation peak deviation values of all positions, and obtaining the final temperature value of the measured silicon optical chip through a temperature frequency shift coefficient.
In the above embodiment, Δx is equal to or greater than the spatial resolution length.
The invention has the beneficial effects that: according to the device and the method for measuring the temperature of the silicon optical chip based on the OFDR, the OFDR technology is adopted, and the temperature sensing is realized by measuring the movement of the Rayleigh scattering spectrum of the detection light. The silicon optical chip is not only an object to be measured but also a sensor, the sensor is not required to be additionally arranged, the measurement result accurately reflects the temperature of the chip, the silicon optical chip is not interfered by the outside, and the problems of complex sensor, difficult arrangement, large measurement error and the like in the traditional sensing device are effectively solved. The signal light is coupled into and out of the chip through the mode spot converter with a special structure, so that the loss is low, and the measurement accuracy is improved.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic diagram of a measuring apparatus of the present invention;
FIG. 2 coupling of a single mode fiber to a chip;
FIG. 3 is a flow chart of a method for measuring a silicon optical chip according to the present invention;
FIG. 4 is a flow chart of the demodulation steps of the silicon optical chip measurement method of the present invention;
FIG. 5 is a schematic diagram of a demodulation step of the acquired signal;
FIG. 6 is a graph of the distance-reflection intensity of a silicon optical chip obtained after FFT of signals acquired by an OFDR device;
FIG. 7 is a Rayleigh scattering spectrum before and after a temperature change at a position on a silicon optical chip;
fig. 8 is a graph of the temperature change of the silicon photo chip.
In fig. 1: the laser device comprises a linear sweep frequency laser device 1, an optical fiber beam splitter 2, an optical fiber circulator 3, a mode spot converter 4, a silicon optical chip 5, an optical fiber coupler (1 x 2) 6, a photoelectric detector 7, a data acquisition card 8 and a computer 9.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, the OFDR-based silicon optical chip temperature measuring device in the embodiment of the invention comprises a linear sweep laser 1, an optical fiber beam splitter 2, an optical fiber circulator 3, a spot-size converter 4, a silicon optical chip 5, an optical fiber coupler (1 x 2) 6, a photoelectric detector 7, a data acquisition card 8 and a computer 9.
The linear sweep frequency laser 1 is connected with the input end of the optical fiber beam splitter 2, and the output end of the optical fiber beam splitter is respectively connected with the port a of the optical fiber circulator and the port a of the optical fiber coupler (1 x 2). The port b of the optical fiber circulator is connected with the silicon optical chip through the mode spot converter, and the port c is connected with the port b of the optical fiber coupler.
The linear sweep laser 1 is used as a light source to emit laser with the wavelength periodically changed, and the laser enters the optical fiber beam splitter 2 to be split into two paths. One path is signal light, the other path is reference light, and the reference light directly enters an a port of the coupler 5. The signal light enters the port a of the circulator 3 and enters the silicon optical chip 5 through the spot-size converter 4 to be subjected to backward scattering, and the backward scattered light returns to the circulator 3 along the path and exits into the coupler 6 through the port c. Where the two light paths interfere to produce a beat signal. The photoelectric detector 7 converts the optical signal into an electric signal, the electric signal is collected by the data collection card 8, and the frequency spectrum information of the beat frequency signal is obtained by operation processing in the computer 9.
The spot-size converter 4 is connected between the optical fiber circulator 3 and the silicon optical chip 5, and the spot-size converter 4 is connected with the optical fiber circulator 3 through a single-mode optical fiber, as shown in fig. 2, the spot-size converter 4 is a wedge-shaped body, one connecting end of the wedge-shaped body is a plane end, and the plane end is connected with an end S1 of the single-mode optical fiber; the other connecting end of the wedge-shaped body is a wire end, the wire end is connected with the silicon optical chip 5, and the connecting part is a chip section S2 of the silicon optical chip.
The measuring method of the invention is based on the optical frequency domain reflection technology, the silicon optical chip to be measured is taken as a sensor, and light enters and exits the chip through a spot-size converter with a special structure. The change of temperature can cause the chip Rayleigh scattering spectrum to move, and the movement quantity is obtained by measuring the cross-correlation operation of the Rayleigh scattering spectrum (after the temperature change) and the reference spectrum (original temperature). The cross correlation peak deviation value is a shift amount corresponding to the temperature variation amount. The measuring mode has the characteristics of high spatial resolution and high precision, solves the problems that the sensor layout of the traditional sensing means is complex, the measuring result is easily influenced by the outside, and the like, and is particularly suitable for measuring the temperature of the micro silicon optical chip.
As shown in fig. 3, the silicon optical chip measurement method based on the device of the embodiment of the invention specifically includes the following steps:
s10, dividing laser emitted by a linear scanning laser into two beams, wherein one beam is used as reference light, and the other beam is used as signal light;
s20, the signal light enters a silicon optical chip through a mode spot converter, rayleigh scattering light generated at each position of the silicon optical chip returns along a path, and beat frequency interference is generated between the signal light and the reflected reference light through an optical fiber coupler, so that a beat frequency interference signal is generated;
s30, the beat interference signals are converted into electric signals through the photoelectric detector, the electric signals are collected by the data collection card, and the collected signals are demodulated through the computer.
In step S20, the acquisition may be performed twice, the reference signal may be acquired once, and the measurement signal may be acquired once.
In one acquisition, the laser light emitted from the linear scanning laser is split into two beams, one beam is used as reference light, and the other beam is used as signal light. The signal light enters the silicon optical chip through the mode spot converter, rayleigh scattering light generated at each position of the silicon optical chip returns along a path, and beat frequency interference is generated between the signal light and the reflected reference light through the coupler, so that a beat frequency interference signal is generated. The beat interference signal is converted into an electric signal by a photoelectric detector, the electric signal is collected by a data collection card, and the collected signal is demodulated by a computer.
The temperature change can cause the movement of the Rayleigh scattering spectrum of the silicon optical chip, and the chip temperature can be measured by adjusting the movement amount obtained by collecting signals twice.
The specific demodulation steps are shown in fig. 4 and 5:
s31, converting the acquired reference signals and the measurement signals into a distance domain through non-uniform fast Fourier change.
S32, dividing the distance domain signal into a plurality of signals by using a moving window with the width delta x.
S33, converting the plurality of distance domain signals of the measuring signal and the reference signal into a wavelength domain through non-uniform fast Fourier transform to obtain the Rayleigh scattering spectrum of the measuring light and the reference light at each position of the chip.
S34, carrying out cross-correlation operation on the Rayleigh scattering spectrums of the measuring light and the reference light to obtain cross-correlation peak deviation values of all positions, and obtaining a final temperature value through a temperature frequency shift coefficient.
FIG. 6 is a graph showing the reflection intensity spectrum of a 1cm silicon optical chip at different positions, the abscissa being distance, and the ordinate being reflectance, obtained by performing fast Fourier transform on the beat signal acquired by the OFDR measurement device. Dividing the whole signal into multiple signal areas by using a moving window and then respectively performing FFT -1 And obtaining Rayleigh scattering spectra of all positions of the silicon optical chip.
The rayleigh scattering spectrum before and after the temperature change at a certain position on the silicon optical chip is shown in fig. 7. The change of the degree can cause the chip Rayleigh scattering spectrum to move, and the movement amount is obtained by measuring the cross-correlation operation of the Rayleigh scattering spectrum (after the temperature change) and the reference spectrum (original temperature). The temperature rise causes the position rayleigh scattering spectrum to shift to the left, the cross correlation peak deviation value is about 0.3nm, corresponding to a temperature change of 25 ℃. The acquired Rayleigh scattering spectra before and after the temperature change of each position on the chip are subjected to cross-correlation operation to obtain the temperature change condition of the whole chip, as shown in fig. 8. It is clear that the temperature change occurs somewhere between 12.788-12.799 m.
Another embodiment of the invention is a silicon optical chip multipoint temperature measurement based on OFDR. The number of temperature change points which can be measured by the OFDR device of a silicon optical chip with fixed size is related to the spatial resolution of the silicon optical chip. As can be seen from the specific demodulation step of the above signal, the width Δx of the moving window is a key parameter for determining the spatial resolution. When the delta x is larger than or equal to the length of the spatial resolution and the temperature of any multi-point position is changed, rayleigh scattering signals of each point can be acquired, and the cross correlation peak deviation value is obtained after demodulation processing, so that the temperature change condition of each point is directly reflected.
In summary, the device and the method for measuring the temperature of the silicon optical chip based on the OFDR adopt the OFDR technology, and realize temperature sensing by measuring the movement of the Rayleigh scattering spectrum of the detection light. The silicon optical chip is not only an object to be measured but also a sensor, the sensor is not required to be additionally arranged, the measurement result accurately reflects the temperature of the chip, the silicon optical chip is not interfered by the outside, and the problems of complex sensor, difficult arrangement, large measurement error and the like in the traditional sensing device are effectively solved. The signal light is coupled into and out of the chip through the mode spot converter with a special structure, so that the loss is low, and the measurement accuracy is improved. The spatial resolution of the measuring method can reach 1mm, the precision is +/-0.1 ℃, and the measuring method is particularly suitable for the fields with high requirements on the precision of measuring the temperature of a micro chip.
It will be readily understood by those skilled in the art that the drawings and examples described herein are illustrative only and not limiting of the present invention, and that any modifications, equivalents, and improvements made within the spirit and principles of the present invention are intended to be encompassed within the scope of the claimed invention.
Claims (3)
1. The utility model provides a silicon optical chip temperature measuring device based on OFDR which characterized in that includes linear sweep frequency laser instrument, optical fiber beam splitter, fiber circulator, silicon optical chip, mode spot converter, fiber coupler, photoelectric detector, data acquisition card and computer, wherein:
the optical fiber beam splitter divides sweep laser output by the linear sweep laser into two paths, wherein one path is signal light, and the other path is reference light; the signal light enters the optical fiber circulator, and the reference light enters the optical fiber coupler;
the mode spot converter is connected between the optical fiber circulator and the silicon optical chip and is connected with the optical fiber circulator through a single mode optical fiber; the spot-size converter is a wedge-shaped body, one connecting end of the wedge-shaped body is a plane end, and the plane end is connected with the end part of the single-mode optical fiber; the other connecting end of the wedge-shaped body is a wire end, and the wire end is connected with the silicon optical chip;
the silicon optical chip is coupled with a single mode fiber through the mode spot converter, and signal light enters and exits the silicon optical chip through the mode spot converter; the Rayleigh scattering signals generated at each position on the silicon optical chip are returned to enter the optical fiber coupler along a path, and beat frequency interference is generated at the optical fiber coupler with reference light to generate beat frequency interference signals;
the photoelectric detector converts the beat interference signal into an electric signal;
the data acquisition card acquires beat frequency interference signals in the electric signals through multiple channels at the same time;
the computer is in data communication with the linear sweep laser and the data acquisition card, controls the linear sweep laser and the data acquisition card, and demodulates the acquisition signals.
2. A silicon optical chip temperature measurement method based on the OFDR-based silicon optical chip temperature measurement apparatus as set forth in claim 1, comprising the steps of:
dividing laser emitted by a linear scanning laser into two beams, wherein one beam is used as reference light, and the other beam is used as signal light;
the signal light enters the silicon optical chip through the mode spot converter, rayleigh scattering light generated at each position of the silicon optical chip returns along a path, and beat frequency interference is generated between the signal light and the reflected reference light through the optical fiber coupler, so that beat frequency interference signals are generated;
the beat frequency interference signals are converted into electric signals through a photoelectric detector, the electric signals are collected by a data collection card, and the collected signals are demodulated through a computer;
the specific demodulation process comprises the following steps:
converting the reference signal and the measurement signal to a distance domain through non-uniform fast fourier transform;
dividing the distance domain signal into a plurality of signals by using a moving window with a width deltax;
converting a plurality of distance domain signals of the measurement signal and the reference signal into a wavelength domain through non-uniform fast Fourier transform to obtain a Rayleigh scattering spectrum of the measurement light and the reference light at each position of the silicon optical chip;
and carrying out cross-correlation operation on the Rayleigh scattering spectrum of the measuring light and the reference light to obtain cross-correlation peak deviation values of all positions, and obtaining the final temperature value of the measured silicon optical chip through a temperature frequency shift coefficient.
3. The method of claim 2, wherein Δx is equal to or greater than the spatial resolution length.
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| CN112067155B (en) * | 2020-11-11 | 2022-03-22 | 武汉昊衡科技有限公司 | Lithium battery temperature dynamic monitoring method based on OFDR |
| CN114383527A (en) * | 2022-03-23 | 2022-04-22 | 武汉奇测科技有限公司 | Multi-channel grating demodulation device and method for frequency multiplexing and demultiplexing |
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| DE102013211841A1 (en) * | 2013-06-21 | 2015-01-08 | Osram Opto Semiconductors Gmbh | Method for determining a temperature of an optoelectronic semiconductor chip and optoelectronic component |
| CN105634611A (en) * | 2016-01-08 | 2016-06-01 | 华为技术有限公司 | Optical module and signal processing method |
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| DE102013211841A1 (en) * | 2013-06-21 | 2015-01-08 | Osram Opto Semiconductors Gmbh | Method for determining a temperature of an optoelectronic semiconductor chip and optoelectronic component |
| CN105634611A (en) * | 2016-01-08 | 2016-06-01 | 华为技术有限公司 | Optical module and signal processing method |
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| 一种利用布里渊增益谱边带解调提高布里渊光时域反射系统测温精度的方法;刘瑞霞;张明江;张建忠;刘毅;靳宝全;白清;李哲哲;;物理学报(24);全文 * |
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