CN108917974A - Silicon optical chip temperature measuring device and method based on OFDR - Google Patents
Silicon optical chip temperature measuring device and method based on OFDR Download PDFInfo
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- CN108917974A CN108917974A CN201811060836.5A CN201811060836A CN108917974A CN 108917974 A CN108917974 A CN 108917974A CN 201811060836 A CN201811060836 A CN 201811060836A CN 108917974 A CN108917974 A CN 108917974A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 71
- 239000010703 silicon Substances 0.000 title claims abstract description 71
- 238000002168 optical frequency-domain reflectometry Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000835 fiber Substances 0.000 claims abstract description 29
- 239000013307 optical fiber Substances 0.000 claims abstract description 27
- 238000001228 spectrum Methods 0.000 claims abstract description 25
- 238000005259 measurement Methods 0.000 claims abstract description 22
- 230000035559 beat frequency Effects 0.000 claims description 20
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 238000006073 displacement reaction Methods 0.000 claims description 3
- 238000004861 thermometry Methods 0.000 claims description 3
- 238000010408 sweeping Methods 0.000 claims description 2
- 238000000691 measurement method Methods 0.000 abstract description 7
- 230000008859 change Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000010276 construction Methods 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of silicon optical chip temperature measuring device and method based on OFDR, wherein device includes linear frequency sweep laser, fiber optic splitter, optical fiber circulator, silicon optical chip, spot-size converter, fiber coupler, photodetector, data collecting card and computer.Measurement method of the invention is based on optical frequency domain reflection technology, regard silicon optical chip itself to be measured as sensor, light passes in and out chip by the spot-size converter of special construction.The variation of temperature can cause chip Rayleigh Scattering Spectra mobile, and amount of movement is obtained by measurement Rayleigh Scattering Spectra (after temperature change) with reference spectra (original temperature) computing cross-correlation.Cross-correlation peak deviation value is amount of movement, corresponds to temperature variation.The measurement method has the characteristics that spatial resolution is high, with high accuracy, solves traditional sensing means sensor and lays the problems such as complicated, measurement result is influenced vulnerable to the external world, measures especially suitable for small silicon optical chip temperature.
Description
Technical field
The present invention relates to field of optical measurements more particularly to a kind of silicon optical chip temperature measuring devices and side based on OFDR
Method.
Background technique
It is integrated with photoelectric conversion and transmission module on silicon optical chip, data biography is carried out by the exchange of chip chamber optical signal
It is defeated, compared to integrated circuit data transmission mode used at present, has and the spies such as low, transmission belt is roomy, transmission speed is fast are lost
Point will play the part of extremely critical angle in many fields such as optic communication, data center, biology, national defence, intelligent automobile and unmanned plane
Color.As semiconductor chip, silicon optical chip can generate certain energy consumption, cause when carrying out high frequency operation and data are transmitted
Chip temperature rises, and influences the control and transmission quality of optical signal, therefore, chip temperature real-time monitoring seems very necessary.Often
There is many deficiencies for temperature sensing device：Such as the general volume of electric sensor is larger, structure is complicated, it is difficult to be integrated in
On the silicon optical chip of small volume, and its service life is shorter, and frequent replacement easily causes wafer damage；Special fiber is as biography
Sensor is laid in chip surface, and on the one hand since chip volume is small, fiber deployment is very difficult, and it is only anti-on the other hand to measure temperature
The temperature of chip surface has been reflected, not can accurately reflect chip interior temperature, accuracy of measurement is lower.
In addition, the cross-sectional dimension of silicon optical chip is usually less than 1 μm, with 8~10 μm of core diameter of single mode optical fiber differ compared with
Greatly, can generate great loss when light enters the chip of small size from optical fiber, optical fiber, silicon optical chip coupled problem hinder crowd
Application of the multi fiber sensing technology in chip thermometric.
Summary of the invention
The technical problem to be solved in the present invention is that for being difficult to install temperature sensing on silicon optical chip in the prior art
Device measure silicon optical chip defect, provide it is a kind of directly measured using silicon optical chip as temperature sensor its temperature based on OFDR
Silicon optical chip temperature measuring device and method.
The technical solution adopted by the present invention to solve the technical problems is：
A kind of silicon optical chip temperature measuring device based on OFDR is provided, including linear frequency sweep laser, fiber optic splitter,
Optical fiber circulator, silicon optical chip, spot-size converter, fiber coupler, photodetector, data collecting card and computer, wherein：
The sweeping laser that the linear frequency sweep laser exports is divided into two-way by the fiber optic splitter, is all the way signal
Light, another way are reference light；Signal light enters the optical fiber circulator, and reference light enters the fiber coupler；
The spot-size converter is connected between the optical fiber circulator and the silicon optical chip, and the spot-size converter
It is connect by single mode optical fiber with the optical fiber circulator；The spot-size converter is sphenoid, a connecting pin of the sphenoid
For planar ends, which connect with the end of the single mode optical fiber；Another connecting pin of the sphenoid is line end, the line end
It is connect with the silicon optical chip；
The silicon optical chip passes through the spot-size converter by the spot-size converter and Single-Mode Fiber Coupling, signal light
Pass in and out the silicon optical chip；The Rayleigh scattering signal that everywhere generates on the silicon optical chip backs into the optical fiber coupling along road
Clutch occurs beat frequency interference with reference light at the fiber coupler, generates beat frequency interference signal；
The beat frequency interference signal is converted electric signal by the photodetector；
The data collecting card acquires the beat frequency interference signal in electric signal by multichannel simultaneously；
The computer and the linear frequency sweep laser, the data collecting card carry out data communication, and described in control
Linear frequency sweep laser and the data collecting card, the computer also demodulate acquisition signal.
The silicon optical chip thermometry based on above-mentioned apparatus that the present invention also provides a kind of, includes the following steps：
The laser that linear scan laser issues is divided into two bundles, it is a branch of to be used as reference light, another Shu Zuowei signal light；
Signal light enters silicon optical chip by spot-size converter, and the Rayleigh scattering light that silicon optical chip each position generates is along road
It returns, beat frequency interference occurs by fiber coupler and reflected reference light, generates beat frequency interference signal；
Beat frequency interference signal is converted to electric signal through photodetector, is acquired by data collecting card, by computer to adopting
Collection signal is demodulated；
Specifically demodulating process includes：
Reference signal and measuring signal are transformed into distance domain by nonuniform fast Fourier variation；
Distance domain signal is divided into multiple signals using the moving window that width is Δ x；
Multiple distance domain signals of measuring signal and reference signal are transformed by non-homogeneous quick inversefouriertransform
Wavelength domain obtains the measurement light and reference light Rayleigh Scattering Spectra of silicon optical chip each position；
The Rayleigh Scattering Spectra for measuring light and reference light is subjected to computing cross-correlation, the cross-correlation peak for obtaining each position is inclined
The final temperature value of the silicon optical chip of measurement is obtained by temperature frequency displacement coefficient from value.
Above-described embodiment is connect, Δ x is more than or equal to spatial resolution length.
The beneficial effect comprise that：The present invention is based on the silicon optical chip temperature measuring devices and method of OFDR, adopt
Temperature sensing is realized by the movement of measurement detection light Rayleigh Scattering Spectra with OFDR technology.Silicon optical chip itself is both to be measured
Object is also sensor, without in addition laying sensor and measurement result has accurately reflected chip temperature, not by external interference, effectively
It overcomes sensor complex in conventional sensing apparatus, lay the problems such as difficult, measurement error is big.Signal light passes through special construction
Spot-size converter coupling disengaging chip, loss is low, improves measurement precision.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples, in attached drawing：
Fig. 1 is measuring device schematic diagram of the invention；
The coupling of Fig. 2 single mode optical fiber and chip；
Fig. 3 is silicon optical chip measuring method flow chart of the present invention；
Fig. 4 is the demodulation step flow chart of silicon optical chip measurement method of the present invention；
Fig. 5 is the demodulation step schematic diagram for acquiring signal；
The silicon optical chip distance-reflected intensity map that Fig. 6 is obtained after being the collected signal FFT of OFDR device；
Fig. 7 is the Rayleigh Scattering Spectra on silicon optical chip before a certain position alternating temperature and after alternating temperature；
Fig. 8 is silicon optical chip temperature variation.
In Fig. 1：1 it is linear frequency sweep laser, 2 be fiber optic splitter, 3 be optical fiber circulator, 4 be spot-size converter, 5 is
Silicon optical chip, 6 be optical fiber coupling device (1x2), 7 be 6 photodetectors, 8 be data collecting card, 9 be computer.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
As shown in Figure 1, silicon optical chip temperature measuring device of the embodiment of the present invention based on OFDR, including linear frequency sweep laser
Device 1, fiber optic splitter 2, optical fiber circulator 3, spot-size converter 4, silicon optical chip 5, fiber coupler (1x2) 6, photodetector
7, data collecting card 8, computer 9.
Linear frequency sweep laser 1 is connect with 2 input terminal of fiber optic splitter, fiber optic splitter output end respectively with fiber annular
The port a of device is connected with the port a of fiber coupler (1x2).The b mouth of optical fiber circulator passes through spot-size converter and silicon optical chip
Connection, c mouthfuls connect with the port fiber coupler b.
Linear frequency sweep laser 1 issues the laser of wavelength period variation as light source, and laser enters 2 quilt of fiber optic splitter
It is divided into two-way.It is all the way signal light, is all the way reference light, reference light is directly entered the port a of coupler 5.Signal light enters ring
The port a of shape device 3 simultaneously enters the generation back scattering of silicon optical chip 5 by spot-size converter 4, and rear orientation light returns to ring along road
Shape device 3 simultaneously enters coupler 6 by the outgoing of the port c.Two-way light interferes here, generates beat signal.Photodetector 7
Electric signal is converted optical signal into, is acquired by data collecting card 8, and carries out calculation process in the computer 9 and obtains beat signal
Spectrum information.
Spot-size converter 4 is connected between optical fiber circulator 3 and silicon optical chip 5, and spot-size converter 4 passes through single mode optical fiber
Is connect with optical fiber circulator 3 as shown in Fig. 2, spot-size converter 4 is sphenoid, a connecting pin of the sphenoid is planar ends,
The end S1 connection of the planar ends and single mode optical fiber；Another connecting pin of the sphenoid is line end, the line end and silicon optical chip 5
Connection, junction are the chip cross-section S2 of silicon optical chip.
Measurement method of the invention is based on optical frequency domain reflection technology, regard silicon optical chip itself to be measured as sensor, light is logical
Cross the spot-size converter disengaging chip of special construction.The variation of temperature can cause chip Rayleigh Scattering Spectra mobile, and amount of movement is logical
Measurement Rayleigh Scattering Spectra (after temperature change) is crossed to obtain with reference spectra (original temperature) computing cross-correlation.Deviate at cross-correlation peak
Value is amount of movement, corresponds to temperature variation.The measurement method has the characteristics that spatial resolution is high, with high accuracy, solves biography
Sensing means sensor of uniting lays the problems such as complicated, measurement result is influenced vulnerable to the external world, especially suitable for small silicon optical chip temperature
Degree measurement.
As shown in figure 3, the silicon optical chip measurement method the present invention is based on above-described embodiment device specifically includes following steps：
S10, the laser that linear scan laser issues is divided into two bundles, it is a branch of to be used as reference light, another Shu Zuowei signal
Light；
S20, signal light enter silicon optical chip, the Rayleigh scattering light that silicon optical chip each position generates by spot-size converter
It is returned along road, beat frequency interference occurs by fiber coupler and reflected reference light, generates beat frequency interference signal；
S30, beat frequency interference signal are converted to electric signal through photodetector, are acquired by data collecting card, pass through computer
Acquisition signal is demodulated.
It in step S20, can be acquired in two times, one acquisition reference signal, one acquisition measuring signal.
In one acquisition, the laser that linear scan laser issues is divided into two beams, and a branch of to be used as reference light, another beam is made
For signal light.Signal light enters silicon optical chip, the Rayleigh scattering light edge that silicon optical chip each position generates by spot-size converter
Road returns, and beat frequency interference occurs by coupler and reflected reference light, generates beat frequency interference signal.Beat frequency interference signal
Electric signal is converted to through photodetector, is acquired by data collecting card, acquisition signal is demodulated by computer.
Since the variation of temperature can cause the movement of silicon optical chip Rayleigh Scattering Spectra, reconciles acquisition signal twice and moved
Momentum size is just capable of measuring chip temperature.
Specific demodulation step is as shown in Figure 4,5：
S31, will collect reference signal and measuring signal by nonuniform fast Fourier variation be transformed into distance domain.
S32, distance domain signal is divided into multiple signals using the moving window that width is Δ x.
S33, multiple distance domain signals of measuring signal and reference signal are turned by non-homogeneous quick inversefouriertransform
Wavelength domain is changed to, the measurement light and reference light Rayleigh Scattering Spectra of chip each position are obtained.
S34, the Rayleigh Scattering Spectra for measuring light and reference light is subjected to computing cross-correlation, obtains the cross-correlation of each position
Peak deviation value obtains final temperature value by temperature frequency displacement coefficient.
Fig. 6 is to carry out the length that fast Fourier changes using the collected beat signal of OFDR measuring device to be
Reflected intensity spectrum at 1cm silicon optical chip different location, abscissa is distance, and ordinate is reflectivity.It will using moving window
Whole segment signal is divided into behind multi-segment signal area carries out FFT respectively-1Obtain the Rayleigh Scattering Spectra of silicon optical chip each position.
Rayleigh Scattering Spectra on silicon optical chip before a certain position alternating temperature and after alternating temperature is as shown in Figure 7.The variation of degree can draw
It is mobile to play chip Rayleigh Scattering Spectra, amount of movement is (original by measurement Rayleigh Scattering Spectra (after temperature change) and reference spectra
Temperature) computing cross-correlation obtains.The raising of temperature causes the position Rayleigh Scattering Spectra to be moved to the left, and cross-correlation peak deviation value is about
For 0.3nm, corresponding to temperature change is 25 DEG C.Rayleigh scattering on the collected chip before the alternating temperature of each position and after alternating temperature
Spectrum carries out computing cross-correlation, obtains the temperature variations on monolith chip, as shown in Figure 8.What can be apparent sees, temperature
A certain position between 12.788-12.799m occurs for degree variation.
Another embodiment of the invention is the silicon optical chip multipoint temperature measuring based on OFDR.The silicon light core of fixed size
Piece, the detectable temperature change points of OFDR device are related with its spatial resolution.From the specific demodulation step of above-mentioned signal
It is found that the width Delta x of moving window is the key parameters for determining spatial resolution.Mono- timing of Δ x, is more than or equal to spatial resolution
Length, when temperature change occurs for any multiple spot position, each point Rayleigh scattering signal can be collected, and be obtained after demodulation process mutually
Relevant peaks deviation value directly reflects the temperature variations of each point.
To sum up, the present invention is based on the silicon optical chip temperature measuring devices and method of OFDR passes through measurement using OFDR technology
The movement of light Rayleigh Scattering Spectra is detected, realizes temperature sensing.Silicon optical chip itself is both determinand and sensor, without another
Outer laying sensor and measurement result has accurately reflected chip temperature, not by external interference, effectively overcomes conventional sensing apparatus
Middle sensor complex lays the problems such as difficult, measurement error is big.Signal light couples disengaging by the spot-size converter of special construction
Chip, loss is low, improves measurement precision.For the measurement method spatial resolution up to 1mm, precision is ± 0.1 DEG C, especially suitable
For the measurement of micro chip temperature and the field more demanding to chip temperature measurement accuracy.
As it will be easily appreciated by one skilled in the art that accompanying drawings and embodiments described herein are only to illustrate the technology of the present invention
Scheme rather than its limitations, it is all do not depart from the present invention program spirit and principle within it is made it is any modification, equivalent replacement and
Improve etc., it should all cover within the scope of the technical scheme claimed by the invention.
Claims (3)
1. a kind of silicon optical chip temperature measuring device based on OFDR, which is characterized in that including linear frequency sweep laser, optical fiber point
Beam device, optical fiber circulator, silicon optical chip, spot-size converter, fiber coupler, photodetector, data collecting card and computer,
Wherein：
The sweeping laser that the linear frequency sweep laser exports is divided into two-way by the fiber optic splitter, is all the way signal light, separately
It is all the way reference light；Signal light enters the optical fiber circulator, and reference light enters the fiber coupler；
The spot-size converter is connected between the optical fiber circulator and the silicon optical chip, and the spot-size converter passes through
Single mode optical fiber is connect with the optical fiber circulator；The spot-size converter is sphenoid, and a connecting pin of the sphenoid is flat
Face end, the planar ends are connect with the end of the single mode optical fiber；Another connecting pin of the sphenoid is line end, the line end and institute
State the connection of silicon optical chip；
The silicon optical chip is passed in and out by the spot-size converter and Single-Mode Fiber Coupling, signal light by the spot-size converter
The silicon optical chip；The Rayleigh scattering signal that everywhere generates on the silicon optical chip backs into the fiber coupling along road
Device occurs beat frequency interference with reference light at the fiber coupler, generates beat frequency interference signal；
The beat frequency interference signal is converted electric signal by the photodetector；
The data collecting card acquires the beat frequency interference signal in electric signal by multichannel simultaneously；
The computer and the linear frequency sweep laser, the data collecting card carry out data communication, and control described linear
Frequency swept laser and the data collecting card, the computer also demodulate acquisition signal.
2. a kind of silicon optical chip thermometry based on claim 1, which is characterized in that include the following steps：
The laser that linear scan laser issues is divided into two bundles, it is a branch of to be used as reference light, another Shu Zuowei signal light；
Signal light enters silicon optical chip by spot-size converter, and the Rayleigh scattering light that silicon optical chip each position generates is returned along road
It returns, beat frequency interference occurs by fiber coupler and reflected reference light, generates beat frequency interference signal；
Beat frequency interference signal is converted to electric signal through photodetector, is acquired by data collecting card, is believed by computer acquisition
It number is demodulated；
Specifically demodulating process includes：
Reference signal and measuring signal are transformed into distance domain by nonuniform fast Fourier variation；
Distance domain signal is divided into multiple signals using the moving window that width is Δ x；
Multiple distance domain signals of measuring signal and reference signal are transformed into wavelength by non-homogeneous quick inversefouriertransform
Domain obtains the measurement light and reference light Rayleigh Scattering Spectra of silicon optical chip each position；
The Rayleigh Scattering Spectra for measuring light and reference light is subjected to computing cross-correlation, the cross-correlation peak for obtaining each position deviates
Value, by temperature frequency displacement coefficient, obtains the final temperature value of the silicon optical chip of measurement.
3. silicon optical chip thermometry according to claim 1, which is characterized in that Δ x is more than or equal to spatial discrimination
Rate length.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109613005A (en) * | 2018-12-20 | 2019-04-12 | 武汉隽龙科技股份有限公司 | Damage detecting method based on OFDR |
| CN112067155A (en) * | 2020-11-11 | 2020-12-11 | 武汉昊衡科技有限公司 | Lithium battery temperature dynamic monitoring method based on OFDR |
| CN113358240A (en) * | 2021-06-04 | 2021-09-07 | 燕山大学 | DUS-FBG-based large-area flexible intelligent skin temperature and pressure sensor |
| CN114383527A (en) * | 2022-03-23 | 2022-04-22 | 武汉奇测科技有限公司 | Multi-channel grating demodulation device and method for frequency multiplexing and demultiplexing |
| CN113358240B (en) * | 2021-06-04 | 2024-04-26 | 燕山大学 | Temperature and pressure sensor of large-area flexible intelligent skin based on DUS-FBG |
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| CN113358240A (en) * | 2021-06-04 | 2021-09-07 | 燕山大学 | DUS-FBG-based large-area flexible intelligent skin temperature and pressure sensor |
| CN113358240B (en) * | 2021-06-04 | 2024-04-26 | 燕山大学 | Temperature and pressure sensor of large-area flexible intelligent skin based on DUS-FBG |
| CN114383527A (en) * | 2022-03-23 | 2022-04-22 | 武汉奇测科技有限公司 | Multi-channel grating demodulation device and method for frequency multiplexing and demultiplexing |
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| CN108917974B (en) | 2023-08-11 |
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