CN108899367A - A kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device - Google Patents
A kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device Download PDFInfo
- Publication number
- CN108899367A CN108899367A CN201810694486.1A CN201810694486A CN108899367A CN 108899367 A CN108899367 A CN 108899367A CN 201810694486 A CN201810694486 A CN 201810694486A CN 108899367 A CN108899367 A CN 108899367A
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- China
- Prior art keywords
- gallium nitride
- semiconductor layer
- aluminium
- hemt device
- closed type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 82
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 239000000956 alloy Substances 0.000 title claims abstract description 41
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 38
- 239000004411 aluminium Substances 0.000 title claims abstract description 38
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
Abstract
The application provides a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device, and including heterojunction structure and the source electrode connecting with the heterojunction structure, drain and gate, the heterojunction structure includes：The first semiconductor layer as channel layer；The second semiconductor layer as barrier layer is formed on first semiconductor layer；It is formed with p-type semiconductor layer between second semiconductor layer and the grid, two-dimensional electron gas is formed between first semiconductor layer and second semiconductor layer, the two-dimensional electron gas disappears immediately below the p-type semiconductor layer；Inserted with gate dielectric between the p-type semiconductor layer and the grid.Using embodiment each in the application, leakage current can be reduced, and increases range of the grid voltage in leakage current tolerance interval.
Description
Technical field
This application involves technical field of semiconductor device, in particular to a kind of closed type gallium nitride/aluminium gallium nitride alloy based hemts
Device.
Background technique
Due to gallium nitride HEMT（High Electron Mobility Transistor, high electron mobility transistor）
Channel layer and barrier layer between two-dimensional electron gas presence, leading to gallium nitride HEMT is a kind of normally on device.
In order to realize the normally closed property of the gallium nitride HEMT device, i.e., only in grid, there are conductings when forward bias.It is existing
Have and generallys use the design of following two structure in technology：
The first structure is p-type gallium nitride/aluminium gallium nitride alloy covering HEMT, and Fig. 2 is the HEMT device of the first structure
Structural schematic diagram；
Second of structure is that have recessed embedded the grid MIS-HEMT, Fig. 3 of insulated gate electrode dielectric layer be second of structure
The structural schematic diagram of device.
But p-type gallium nitride/aluminium gallium nitride alloy covering HEMT usually (is less than 10nA/ in the range that leakage current is subjected to
Mm the range of grid voltage) is smaller.
At least there are the following problems in the prior art：Existing p-type gallium nitride/aluminium gallium nitride alloy covering HEMT is usually leaking
The range for the grid voltage for (being less than 10nA/mm) in the acceptable range of electric current is smaller.
Summary of the invention
The purpose of the embodiment of the present application is to provide a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device, to reduce leakage
Electric current, and increase range of the grid voltage in leakage current tolerance interval.
The embodiment of the present application provides a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device and is realized in：
A kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device, including heterojunction structure and the source being connect with the heterojunction structure
Pole, drain and gate, the heterojunction structure include：
The first semiconductor layer as channel layer；
The second semiconductor layer as barrier layer is formed on first semiconductor layer；
P-type semiconductor layer, first semiconductor layer and described are formed between second semiconductor layer and the grid
Two-dimensional electron gas is formed between two semiconductor layers, the two-dimensional electron gas disappears immediately below the p-type semiconductor layer；
Inserted with gate dielectric between the p-type semiconductor layer and the grid.
In preferred embodiment, the material composition of the gate dielectric is any oxide or any nitride.
In preferred embodiment, the composition material of the grid is pure metal material or alloy material.
In preferred embodiment, the composition material of the p-type semiconductor layer is gallium nitride or aluminium gallium nitride alloy.
In preferred embodiment, the hole concentration in the p-type semiconductor layer is greater than 1 × 1017cm-3。
In preferred embodiment, the device further includes substrate, also distribution setting between the substrate and the heterojunction structure
There is buffer layer.
In preferred embodiment, the material composition of first semiconductor layer includes gallium nitride, second semiconductor layer
Material composition includes aluminium gallium nitride alloy.
In preferred embodiment, Ohmic contact is formed between the source electrode and the drain electrode and second semiconductor layer.
In preferred embodiment, the composition material of the substrate include silicon, sapphire, silicon carbide, gallium nitride, in aluminium nitride
Any one or two or more combinations.
In preferred embodiment, the composition material of the buffer layer includes gallium nitride or aluminium gallium nitride alloy.
It, can be by the p using a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device provided by the embodiments of the present application
Inserted with gate dielectric between type semiconductor layer and the grid, a kind of p-type gallium nitride/aluminium gallium nitride alloy MIS-HEMT device is formed
Part structure can also increase the device and (be less than in the range that leakage current is subjected to while leakage current can be effectively reduced
The range of grid voltage 10nA/mm).On the other hand, for recessed embedded grid MIS-HEMT structure, need to find suitable ease
Metal material of the function less than 5eV forms Schottky barrier gate out, to realize the reduction of leakage current, and uses herein described device
Part structure, so that it may reduce the burden of this respect.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The some embodiments recorded in application, for those of ordinary skill in the art, in the premise of not making the creative labor property
Under, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of structure for closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device that the application one embodiment provides
Schematic diagram；
Fig. 2 is the structural schematic diagram of existing p-type gallium nitride/aluminium gallium nitride alloy covering HEMT device；
Fig. 3 is the structural schematic diagram of the existing recessed embedded grid MIS-HEMT device with insulated gate electrode dielectric layer.
Specific embodiment
The embodiment of the present application provides a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device.
In order to make those skilled in the art better understand the technical solutions in the application, below in conjunction with the application reality
The attached drawing in example is applied, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described implementation
Example is merely a part but not all of the embodiments of the present application.Based on the embodiment in the application, this field is common
The application protection all should belong in technical staff's every other embodiment obtained without creative efforts
Range.
Fig. 1 is a kind of structural schematic diagram of herein described closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device.
Specifically, as described in Figure 1, the one of a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device provided by the present application
Kind embodiment may include heterojunction structure and the source electrode connecting with the heterojunction structure, drain and gate, and the heterojunction structure can
To include：
The first semiconductor layer 1 as channel layer；
The second semiconductor layer 2 as barrier layer is formed on first semiconductor layer 1；
It is formed with p-type semiconductor layer 3 between second semiconductor layer 2 and the grid, first semiconductor layer 1 and described
Two-dimensional electron gas 4 is formed between second semiconductor layer 2, the two-dimensional electron gas 4 disappears immediately below the p-type semiconductor layer 3
It loses；
Inserted with gate dielectric 5 between the p-type semiconductor layer 3 and the grid.
In this example, the material composition of the gate dielectric 5 is any oxide or any nitride.
In this example, the composition material of the grid is pure metal material or alloy material.
In this example, the composition material of the p-type semiconductor layer 3 is gallium nitride or aluminium gallium nitride alloy.
In this example, the hole concentration in the p-type semiconductor layer 3 is greater than 1 × 1017cm-3。
In this example, the device further includes substrate 7, between the substrate 7 and the heterojunction structure also distribution be provided with it is slow
Rush layer 6.
In this example, the material composition of first semiconductor layer 1 includes gallium nitride, the material of second semiconductor layer 2
Composition includes aluminium gallium nitride alloy.
In this example, Ohmic contact is formed between the source electrode and the drain electrode and second semiconductor layer 2.
In this example, the composition material of the substrate 7 includes silicon, sapphire, silicon carbide, gallium nitride, any in aluminium nitride
A combination of one or more.
In this example, the composition material of the buffer layer 6 includes gallium nitride or aluminium gallium nitride alloy.
Utilize a kind of embodiment of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device provided by the above embodiment, Ke Yitong
It crosses between the p-type semiconductor layer and the grid inserted with gate dielectric, forms a kind of p-type gallium nitride/aluminium gallium nitride alloy
MIS-HEMT device architecture can also increase the device in leakage current acceptable model while leakage current can be effectively reduced
The range for the grid voltage for (being less than 10nA/mm) in enclosing.On the other hand, it for recessed embedded grid MIS-HEMT structure, needs to look for
Metal material to suitable work function less than 5eV forms Schottky barrier gate, to realize the reduction of leakage current, and uses this
Apply for the device architecture, so that it may reduce the burden of this respect.
Each embodiment in this specification is described in a progressive manner, and the same or similar part is mutual between each embodiment
Mutually referring to each embodiment focuses on the differences from other embodiments.
Although depicting the application by embodiment, it will be appreciated by the skilled addressee that the application there are many deformation and
Variation is without departing from spirit herein, it is desirable to which the attached claims include these deformations and change without departing from the application's
Spirit.
Claims (10)
1. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device is connect including heterojunction structure and with the heterojunction structure
Source electrode, drain and gate, which is characterized in that the heterojunction structure includes：
The first semiconductor layer as channel layer；
The second semiconductor layer as barrier layer is formed on first semiconductor layer；
P-type semiconductor layer, first semiconductor layer and described are formed between second semiconductor layer and the grid
Two-dimensional electron gas is formed between two semiconductor layers, the two-dimensional electron gas disappears immediately below the p-type semiconductor layer；
Inserted with gate dielectric between the p-type semiconductor layer and the grid.
2. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device as described in claim 1, which is characterized in that the grid
The material composition of pole dielectric layer is any oxide or any nitride.
3. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device as described in claim 1, which is characterized in that the grid
The composition material of pole is pure metal material or alloy material.
4. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device as described in claim 1, which is characterized in that the p-type
The composition material of semiconductor layer is gallium nitride or aluminium gallium nitride alloy.
5. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device as claimed in claim 3, which is characterized in that the p-type
Hole concentration in semiconductor layer is greater than 1 × 1017cm-3。
6. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device as described in claim 1, which is characterized in that the device
Part further includes substrate, and also distribution is provided with buffer layer between the substrate and the heterojunction structure.
7. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device as described in claim 1, which is characterized in that described the
The material composition of semi-conductor layer includes gallium nitride, and the material composition of second semiconductor layer includes aluminium gallium nitride alloy.
8. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device as described in claim 1, which is characterized in that the source
Ohmic contact is formed between pole and the drain electrode and second semiconductor layer.
9. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device as claimed in claim 6, which is characterized in that the lining
The composition material at bottom includes silicon, sapphire, silicon carbide, gallium nitride, any one or two or more combinations in aluminium nitride.
10. a kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device as claimed in claim 6, which is characterized in that described slow
The composition material for rushing layer includes gallium nitride or aluminium gallium nitride alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810694486.1A CN108899367A (en) | 2018-06-29 | 2018-06-29 | A kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810694486.1A CN108899367A (en) | 2018-06-29 | 2018-06-29 | A kind of closed type gallium nitride/aluminium gallium nitride alloy Base HEMT device |
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| CN108899367A true CN108899367A (en) | 2018-11-27 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030157776A1 (en) * | 2000-12-01 | 2003-08-21 | Smith Richard Peter | Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
| US20120313106A1 (en) * | 2011-06-10 | 2012-12-13 | International Rectifier Corporation | Enhancement Mode Group III-V High Electron Mobility Transistor (HEMT) and Method for Fabrication |
-
2018
- 2018-06-29 CN CN201810694486.1A patent/CN108899367A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030157776A1 (en) * | 2000-12-01 | 2003-08-21 | Smith Richard Peter | Methods of fabricating aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment |
| US20120313106A1 (en) * | 2011-06-10 | 2012-12-13 | International Rectifier Corporation | Enhancement Mode Group III-V High Electron Mobility Transistor (HEMT) and Method for Fabrication |
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Application publication date: 20181127 |
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