CN108899331A - Electronic paper display substrate and preparation method thereof, display device - Google Patents
Electronic paper display substrate and preparation method thereof, display device Download PDFInfo
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- CN108899331A CN108899331A CN201810777407.3A CN201810777407A CN108899331A CN 108899331 A CN108899331 A CN 108899331A CN 201810777407 A CN201810777407 A CN 201810777407A CN 108899331 A CN108899331 A CN 108899331A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
The present invention provides a kind of electronic paper display substrates and preparation method thereof, display device, belong to field of display technology.Wherein, electronic paper display substrate, including barrier metal layer figure, Source and drain metal level figure and the pixel electrode being located on underlay substrate, the Source and drain metal level figure is located at the barrier metal layer figure backwards to the side of the pixel electrode.It can be improved the display quality of display device of electronic paper according to the technical solution of the present invention.
Description
Technical field
The present invention relates to field of display technology, a kind of electronic paper display substrate and preparation method thereof, display dress are particularly related to
It sets.
Background technique
In existing display device of electronic paper, since there are capacitor Cpd between data line and pixel electrode, on the data line
Voltage will affect the voltage on pixel electrode when changing, in addition, the electric field that data line generates also influences whether Electronic Paper
Display, therefore, the signal transmitted on data line can to the display of Electronic Paper generate crosstalk, influence the display effect of Electronic Paper.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of electronic paper display substrate and preparation method thereof, display device,
It can be improved the display quality of display device of electronic paper.
In order to solve the above technical problems, the embodiment of the present invention offer technical solution is as follows：
On the one hand, a kind of electronic paper display substrate is provided, including barrier metal layer figure, the source and drain gold being located on underlay substrate
Belong to layer pattern and pixel electrode, the Source and drain metal level figure are located at the barrier metal layer figure backwards to the one of the pixel electrode
Side.
Further, the Source and drain metal level figure includes data line, the data line on the underlay substrate just
Projection falls into the barrier metal layer figure in the orthographic projection on the underlay substrate.
Further, the electronic paper display substrate further includes the active layer of thin film transistor (TFT), the barrier metal layer figure
Gate electrode including the thin film transistor (TFT), the active layer are and described between the gate electrode and the underlay substrate
Active layer falls into the gate electrode in the orthographic projection on the underlay substrate in the orthographic projection on the underlay substrate.
Further, the electronic paper display substrate specifically includes：
Underlay substrate；
The Source and drain metal level figure on the underlay substrate；
Gate insulation layer；
The barrier metal layer figure on the gate insulation layer；
Passivation layer；
The pixel electrode on the passivation layer；
Electronic ink layer；
Public electrode in the electronic ink layer.
The embodiment of the invention also provides a kind of display device of electronic paper, including electronic paper display substrate as described above.
The embodiment of the invention also provides a kind of production methods of electronic paper display substrate, including：Successively in underlay substrate
Upper formation Source and drain metal level figure, barrier metal layer figure and pixel electrode.
Further, forming the Source and drain metal level figure includes：
It forms data line, orthographic projection of the data line on the underlay substrate falls into the barrier metal layer figure in institute
It states in the orthographic projection on underlay substrate.
Further, further include：
Form the active layer of thin film transistor (TFT)；
Forming the barrier metal layer figure includes：
Form the gate electrode of the thin film transistor (TFT), the active layer be located at the gate electrode and the underlay substrate it
Between, and the active layer falls into orthographic projection of the gate electrode on the underlay substrate in the orthographic projection on the underlay substrate
It is interior.
Further, the active layer and the Source and drain metal level figure are formed by a patterning processes.
Further, the Source and drain metal level figure includes the source electrode, drain electrode and data line of thin film transistor (TFT), described
The active layer is formed by a patterning processes and the Source and drain metal level figure includes：
Form the first metal layer；
Semiconductor transformation processing is carried out to the surface of the first metal layer and forms semiconductor layer；
Second metal layer is formed on the semiconductor layer；
The first metal layer, the semiconductor layer and the second metal layer are patterned, formed by described first
Metal layer constitute the data line and the source electrode, be made of the semiconductor layer the source electrode, by described second
The drain electrode that metal layer is constituted.
The embodiment of the present invention has the advantages that：
In above scheme, Source and drain metal level figure is located at barrier metal layer figure backwards to the side of pixel electrode, such pixel
Barrier metal layer figure is separated between data line in electrode and Source and drain metal level figure, while between pixel electrode and data line
Distance become larger, the capacitor between data line and pixel electrode can be reduced, and data line can be shielded in transmission telecommunications number
The electric field of generation reduces the cross talk effects that data line generates electronic paper display to the full extent, so as to improve electronics
The display quality of paper display device.
Detailed description of the invention
Fig. 1 is the floor map of existing display device of electronic paper；
Fig. 2 is schematic cross-section at the AA ' of existing display device of electronic paper；
Fig. 3 is schematic cross-section at the BB ' of existing display device of electronic paper；
Fig. 4 is the floor map of display device of electronic paper of the embodiment of the present invention；
Fig. 5 is schematic cross-section at the AA ' of display device of electronic paper of the embodiment of the present invention；
Fig. 6 is schematic cross-section at the BB ' of display device of electronic paper of the embodiment of the present invention；
Fig. 7 is that the embodiment of the present invention is formed data line by a patterning processes, source, drain and active layer is shown
It is intended to.
Appended drawing reference
03 the first metal layer
04 second metal layer
05 photoresist
1 grid line
2 public electrode wires
3 pixel electrodes
4 via holes
5 Source and drain metal level figures
6 underlay substrates
7 passivation layers
8 gate insulation layers
9 barrier metal layer figures
10 electronic ink layers
11 public electrodes
12 active layers
13 gate electrodes
14 drain electrodes
15 source electrodes
16 semiconductor layers
17 data lines
P1 unexposed area
P2 half-exposure region
P3 complete exposure area
Specific embodiment
To keep the embodiment of the present invention technical problems to be solved, technical solution and advantage clearer, below in conjunction with
Drawings and the specific embodiments are described in detail.
Fig. 1 is the floor map of existing display device of electronic paper, and Fig. 2 is to cut at the AA ' of existing display device of electronic paper
Face schematic diagram, Fig. 3 are schematic cross-section at the BB ' of existing display device of electronic paper, as shown in Figure 1-Figure 3, existing Electronic Paper
In display device, Source and drain metal level figure 5 is closer with pixel electrode 3, data line and picture in Source and drain metal level figure 5
There are capacitor Cpd between plain electrode 3, and voltage on the data line will affect the voltage on pixel electrode 3 when changing, separately
Outside, the electric field that data line generates also influences whether the display of Electronic Paper, and therefore, the signal transmitted on data line can be to Electronic Paper
Display generates crosstalk, influences the display effect of Electronic Paper.
The embodiment of the present invention is in view of the above-mentioned problems, provide a kind of electronic paper display substrate and preparation method thereof, display dress
It sets, can be improved the display quality of display device of electronic paper.
The embodiment of the present invention provides a kind of electronic paper display substrate, including be located at underlay substrate on barrier metal layer figure,
Source and drain metal level figure and pixel electrode, the Source and drain metal level figure are located at the barrier metal layer figure backwards to the pixel electricity
The side of pole.
In the present embodiment, Source and drain metal level figure is located at barrier metal layer figure backwards to the side of pixel electrode, such pixel
Barrier metal layer figure is separated between data line in electrode and Source and drain metal level figure, while between pixel electrode and data line
Distance become larger, the capacitor between data line and pixel electrode can be reduced, and data line can be shielded in transmission telecommunications number
The electric field of generation reduces the cross talk effects that data line generates electronic paper display to the full extent, so as to improve electronics
The display quality of paper display device.
Further, the Source and drain metal level figure includes data line, the data line on the underlay substrate just
Projection falls into the barrier metal layer figure in the orthographic projection on the underlay substrate, and number is completely covered in such barrier metal layer figure
According to line, the electric field that data line is generated in transmission telecommunications number can be shielded well, and data line is avoided to generate electronic paper display
Crosstalk.
Further, the electronic paper display substrate further includes the active layer of thin film transistor (TFT), the barrier metal layer figure
Gate electrode including the thin film transistor (TFT), the active layer are and described between the gate electrode and the underlay substrate
Active layer falls into the gate electrode in the orthographic projection on the underlay substrate in the orthographic projection on the underlay substrate.Active
When layer is irradiated by light, the leakage current of thin film transistor (TFT) can become larger, and the performance of thin film transistor (TFT) can be deteriorated, in the present embodiment,
Gate electrode can block active layer completely, can be avoided ambient in this way and be irradiated on active layer, to avoid film crystal
The leakage current of pipe becomes larger, and guarantees the performance of thin film transistor (TFT).
In one specific embodiment, as shown in Figure 4-Figure 6, the electronic paper display substrate of the present embodiment is specifically included：Substrate base
Plate 6；The active layer 12 and Source and drain metal level figure 5 of thin film transistor (TFT) on underlay substrate 6, Source and drain metal level figure 5 wrap
Include source electrode, the drain electrode of data line and thin film transistor (TFT)；Gate insulation layer 8；Barrier metal layer figure 9 on gate insulation layer 8,
Barrier metal layer figure 9 includes gate electrode 13, grid line 1 and the public electrode wire 2 of thin film transistor (TFT)；Passivation layer 7；Positioned at passivation layer 7
On pixel electrode 3；Electronic ink layer 10；Public electrode 11, wherein public electrode 11 and pixel electrode 3 can use transparent
Conductive material is made.
Wherein, electronic ink layer 10 includes multiple electrification microcapsules, and charging in microcapsules includes dyestuff and micro particle,
By the electric field between control pixel electrode and public electrode, the direction of electrification microcapsules can be controlled, in this way by adjusting band
The color of dyestuff and micro particle in electric microcapsules just can make electronic ink layer show color and pattern.Electronic paper display
Have many advantages, such as that low-power consumption, foldable bending, picture display is fine and smooth and visible angle is wide, is widely used in related with press
Application field, such as electronic tag, Portable e-book, electronic newspaper and IC card etc., can provide that books and periodicals are similar reads with tradition
It reads function and uses attribute.
The embodiment of the invention also provides a kind of display device of electronic paper, including electronic paper display substrate as described above.
In the display device of electronic paper of the present embodiment, Source and drain metal level figure is located at barrier metal layer figure backwards to pixel electrode
Side, between the data line in such pixel electrode and Source and drain metal level figure between be separated with barrier metal layer figure, while pixel
The distance between electrode and data line become larger, and can reduce the capacitor between data line and pixel electrode, and can shield data
The electric field that line is generated in transmission telecommunications number reduces the cross talk effects that data line generates electronic paper display to the full extent,
So as to improve the display quality of display device of electronic paper.
The embodiment of the invention also provides a kind of production methods of electronic paper display substrate, including：Successively in underlay substrate
Upper formation Source and drain metal level figure, barrier metal layer figure and pixel electrode.
In the present embodiment, Source and drain metal level figure, barrier metal layer figure and pixel electrode are successively formed on underlay substrate,
Source and drain metal level figure is located at barrier metal layer figure backwards to the side of pixel electrode, such pixel electrode and Source and drain metal level in this way
Barrier metal layer figure is separated between data line in figure, while the distance between pixel electrode and data line become larger, it can
Reduce the capacitor between data line and pixel electrode, and the electric field that data line is generated in transmission telecommunications number can be shielded, it is maximum
Reduce the cross talk effects that data line generates electronic paper display in degree, so as to improve the display of display device of electronic paper
Quality.
Further, forming the Source and drain metal level figure includes：
It forms data line, orthographic projection of the data line on the underlay substrate falls into the barrier metal layer figure in institute
It states in the orthographic projection on underlay substrate, data line is completely covered in such barrier metal layer figure, can shield well data line and exist
The electric field generated when transmission telecommunications number, the crosstalk for avoiding data line from generating electronic paper display.
Further, the production method further includes：
Form the active layer of thin film transistor (TFT)；
Forming the barrier metal layer figure includes：
Form the gate electrode of the thin film transistor (TFT), the active layer be located at the gate electrode and the underlay substrate it
Between, and the active layer falls into orthographic projection of the gate electrode on the underlay substrate in the orthographic projection on the underlay substrate
It is interior.
When active layer is irradiated by light, the leakage current of thin film transistor (TFT) can become larger, and the performance of thin film transistor (TFT) can become
Difference, in the present embodiment, gate electrode can block active layer completely, can be avoided ambient in this way and be irradiated on active layer, from
And the leakage current of thin film transistor (TFT) is avoided to become larger, guarantee the performance of thin film transistor (TFT).
The electronic paper display substrate of the present embodiment can be made by 5 patterning processes, can also pass through 4 patterning processes
Production.
When the electronic paper display substrate of the present embodiment is by 5 patterning processes production, pass through first time patterning processes shape
At the active layer of thin film transistor (TFT), Source and drain metal level figure is formed by second of patterning processes, then forms gate insulation layer, then
Barrier metal layer figure is formed by third time patterning processes, forms the figure of passivation layer by the 4th patterning processes, by the
Five patterning processes form the figure of pixel electrode.
When the electronic paper display substrate of the present embodiment is by 4 patterning processes production, formed by a patterning processes
The active layer and the Source and drain metal level figure can reduce the composition number of electronic paper display substrate in this way, reduce electronics
The production time of paper display base plate reduces the cost of manufacture of electronic paper display substrate.Specifically, same by first time patterning processes
When form the active layer and the Source and drain metal level figure, form gate insulation layer, pass through second of patterning processes and form grid gold
Belong to layer pattern, form the figure of passivation layer by third time patterning processes, forms pixel electrode by the 4th patterning processes
Figure.
Further, the Source and drain metal level figure includes the source electrode, drain electrode and data line of thin film transistor (TFT), described
The active layer is formed by a patterning processes and the Source and drain metal level figure includes：
Form the first metal layer；
Semiconductor transformation processing is carried out to the surface of the first metal layer and forms semiconductor layer；
Second metal layer is formed on the semiconductor layer；
The first metal layer, the semiconductor layer and the second metal layer are patterned, formed by described first
Metal layer constitute the data line and the source electrode, be made of the semiconductor layer the source electrode, by described second
The drain electrode that metal layer is constituted.
Further, above-mentioned semiconductor transformation, which is handled, may include：
Oxidation is carried out to the first metal layer by oxidation technology and forms the metal oxide layer with characteristic of semiconductor.
Wherein, the oxidation technology includes ion implanting mode or electrochemical means.Preferably, the first metal layer and
Two metal layers can be constituted using metallic copper.Cuprous oxide semiconductive thin film is formed by carrying out oxidation to metallic copper, therefore
Semiconductor layer can be above-mentioned cuprous oxide semiconductive thin film.
Specifically, when the first metal layer and second metal layer are constituted using metallic copper, it can be on the first metal layer surface
It is set to be changed into cuprous nano film by ion implanting mode；Alternatively, the first metal layer to be placed in the oxygen ring of high temperature
The surface of the first metal layer is made to form cuprous nano film in border；Or the first metal layer is placed in alcoholic environment
Down so that the surface of the first metal layer forms cuprous nano film.Then using above-mentioned cuprous nano film as partly leading
Body layer.On the surface of above-mentioned semiconductor layer, redeposited one layer of metallic copper forms second metal layer again.It so, can as long as providing
With the processing conditions aoxidized to the first metal layer, so that it may form above-mentioned copper-cuprous oxide film-copper structure, and nothing
The techniques such as multipass coating, sputtering or deposition are needed to form above structure.To simplify manufacture craft, difficulty of processing is reduced
And production cost.Certainly, it is above-mentioned only to the first metal layer carry out semiconductor transformation processing for example, other modes herein
No longer one by one for example, but protection scope of the present invention all should belong to.It should be noted that the oxide of metallic copper can be with
For copper oxide and cuprous oxide, they have a characteristic of semiconductor, i.e., at normal temperature its electric conductivity between conductor (conductor)
Between insulator (insulator).
The preferred cuprous oxide of the embodiment of the present invention is as the pattern for constituting active layer.Certainly, in embodiments of the present invention, with
The first metal layer, semiconductor layer and second metal layer are illustrated for metallic copper, it is other that there is characteristic of semiconductor
Oxide corresponding to metal no longer illustrate one by one herein, but protection scope of the present invention all should belong to.
Specifically, as shown in fig. 7, be sequentially formed with the first metal layer 03, semiconductor layer 16, second metal layer 04 base
Plate surface coats photoresist 05, is exposed processing to photoresist 05 by intermediate tone mask plate, forms unexposed area P1, half
Exposure area P2 and full exposure area P3.Then develop to photoresist 05, the photoresist of unexposed area P1 will be located at
It is fully retained；It will be removed positioned at the photoresist part of half-exposure region P2；It will be gone completely positioned at the photoresist of full exposure area P3
It removes.Wherein as shown in fig. 7, unexposed area P1 is corresponding with drain electrode, active layer, the position of source electrode region；Half exposes
Light region is corresponding with the position of data line region；Rest part is corresponding with the position of full exposure area on substrate.?
After carrying out mask exposure to photoresist, first pass through etching technics remove corresponding with complete exposure area P3 the first metal layer 03,
Semiconductor layer 16, second metal layer 04；Ashing processing is carried out to photoresist 05, to remove all photoresists of half-exposure region P2
Then the part photoresist of 05 and unexposed area P1 removes corresponding first metal of half-exposure region P2 by etching technics
Layer 03, semiconductor layer 16, second metal layer 04；Finally the photoresist of unexposed area P1 is completely removed, the shape on substrate 01
At include data line 17, drain electrode 14, active layer 12, source electrode 15 pattern.So, use half-tone mask plate can be with
Realize by a patterning processes sequentially formed on substrate data line, drain electrode, active layer, source electrode pattern.
Unless otherwise defined, the technical term or scientific term that the disclosure uses should be tool in fields of the present invention
The ordinary meaning for thering is the personage of general technical ability to be understood." first ", " second " used in the disclosure and similar word are simultaneously
Any sequence, quantity or importance are not indicated, and are used only to distinguish different component parts." comprising " or "comprising" etc.
Similar word means that the element or object before the word occur covers the element or object for appearing in the word presented hereinafter
And its it is equivalent, and it is not excluded for other elements or object.The similar word such as " connection " or " connected " is not limited to physics
Or mechanical connection, but may include electrical connection, it is either direct or indirectly."upper", "lower",
"left", "right" etc. is only used for indicating relative positional relationship, and after the absolute position for being described object changes, then the relative position is closed
System may also correspondingly change.
It is appreciated that ought such as layer, film, region or substrate etc element be referred to as be located at another element "above" or "below"
When, which " direct " can be located at "above" or "below" another element, or may exist intermediary element.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, without departing from the principles of the present invention, it can also make several improvements and retouch, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of electronic paper display substrate, including barrier metal layer figure, Source and drain metal level figure and the picture being located on underlay substrate
Plain electrode, which is characterized in that the Source and drain metal level figure is located at the barrier metal layer figure backwards to the one of the pixel electrode
Side.
2. electronic paper display substrate according to claim 1, which is characterized in that the Source and drain metal level figure includes data
Line, the data line fall into the barrier metal layer figure on the underlay substrate just in the orthographic projection on the underlay substrate
In projection.
3. electronic paper display substrate according to claim 1, which is characterized in that the electronic paper display substrate further includes thin
The active layer of film transistor, the barrier metal layer figure include the gate electrode of the thin film transistor (TFT), and the active layer is located at institute
It states between gate electrode and the underlay substrate, and orthographic projection of the active layer on the underlay substrate falls into the gate electrode
In the orthographic projection on the underlay substrate.
4. electronic paper display substrate according to claim 1, which is characterized in that the electronic paper display substrate is specifically wrapped
It includes：
Underlay substrate；
The Source and drain metal level figure on the underlay substrate；
Gate insulation layer；
The barrier metal layer figure on the gate insulation layer；
Passivation layer；
The pixel electrode on the passivation layer；
Electronic ink layer；
Public electrode in the electronic ink layer.
5. a kind of display device of electronic paper, which is characterized in that including electronic paper display such as of any of claims 1-4
Substrate.
6. a kind of production method of electronic paper display substrate, which is characterized in that including：Source and drain gold is successively formed on underlay substrate
Belong to layer pattern, barrier metal layer figure and pixel electrode.
7. the production method of electronic paper display substrate according to claim 6, which is characterized in that form the source and drain metal
Layer pattern includes：
It forms data line, orthographic projection of the data line on the underlay substrate falls into the barrier metal layer figure in the lining
In orthographic projection on substrate.
8. the production method of electronic paper display substrate according to claim 6, which is characterized in that further include：
Form the active layer of thin film transistor (TFT)；
Forming the barrier metal layer figure includes：
Form the gate electrode of the thin film transistor (TFT), the active layer between the gate electrode and the underlay substrate, and
The active layer falls into the gate electrode in the orthographic projection on the underlay substrate in the orthographic projection on the underlay substrate.
9. the production method of electronic paper display substrate according to claim 8, which is characterized in that pass through a patterning processes
Form the active layer and the Source and drain metal level figure.
10. the production method of electronic paper display substrate according to claim 9, which is characterized in that the Source and drain metal level
Figure includes the source electrode, drain electrode and data line of thin film transistor (TFT), described to pass through a patterning processes and form the active layer
Include with the Source and drain metal level figure：
Form the first metal layer；
Semiconductor transformation processing is carried out to the surface of the first metal layer and forms semiconductor layer；
Second metal layer is formed on the semiconductor layer；
The first metal layer, the semiconductor layer and the second metal layer are patterned, formed by first metal
Layer constitute the data line and the source electrode, be made of the semiconductor layer the source electrode, by second metal
The drain electrode that layer is constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810777407.3A CN108899331A (en) | 2018-07-16 | 2018-07-16 | Electronic paper display substrate and preparation method thereof, display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810777407.3A CN108899331A (en) | 2018-07-16 | 2018-07-16 | Electronic paper display substrate and preparation method thereof, display device |
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| CN108899331A true CN108899331A (en) | 2018-11-27 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW396289B (en) * | 1996-10-29 | 2000-07-01 | Nippon Electric Co | Liquid crystal display device |
| KR20070019071A (en) * | 2005-08-11 | 2007-02-15 | 삼성전자주식회사 | POlY SILICON TYPE THIN FILM TRANSISTER AND FABRICATING METHOD THEREOF |
| CN102487041A (en) * | 2010-12-02 | 2012-06-06 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and electronic paper display device |
| CN103560114A (en) * | 2013-11-15 | 2014-02-05 | 京东方科技集团股份有限公司 | TFT array substrate, manufacturing method thereof and display device |
| CN105161499A (en) * | 2015-08-07 | 2015-12-16 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
-
2018
- 2018-07-16 CN CN201810777407.3A patent/CN108899331A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW396289B (en) * | 1996-10-29 | 2000-07-01 | Nippon Electric Co | Liquid crystal display device |
| KR20070019071A (en) * | 2005-08-11 | 2007-02-15 | 삼성전자주식회사 | POlY SILICON TYPE THIN FILM TRANSISTER AND FABRICATING METHOD THEREOF |
| CN102487041A (en) * | 2010-12-02 | 2012-06-06 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and electronic paper display device |
| CN103560114A (en) * | 2013-11-15 | 2014-02-05 | 京东方科技集团股份有限公司 | TFT array substrate, manufacturing method thereof and display device |
| CN105161499A (en) * | 2015-08-07 | 2015-12-16 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
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