CN108878690A - Production method, the display device of display base plate - Google Patents
Production method, the display device of display base plate Download PDFInfo
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- CN108878690A CN108878690A CN201810708937.2A CN201810708937A CN108878690A CN 108878690 A CN108878690 A CN 108878690A CN 201810708937 A CN201810708937 A CN 201810708937A CN 108878690 A CN108878690 A CN 108878690A
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- 238000000034 method Methods 0.000 claims abstract description 36
- 125000006850 spacer group Chemical group 0.000 claims abstract description 30
- 238000001035 drying Methods 0.000 claims abstract description 15
- 238000004132 cross linking Methods 0.000 claims description 4
- 230000005661 hydrophobic surface Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 description 12
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- 239000000463 material Substances 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- 239000003086 colorant Substances 0.000 description 8
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- 230000008859 change Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
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- 238000012545 processing Methods 0.000 description 3
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- 230000000996 additive effect Effects 0.000 description 2
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- 238000010030 laminating Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
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- 230000005284 excitation Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Abstract
Present disclose provides a kind of production methods of display base plate, display device, belong to art of display device manufacture.The method includes：First substrate is made, includes the first surface of quantum dot light emitting layer to be formed on the first substrate；Barriers are formed on the first surface, and the barriers include several spacer bars, several spacer bars extending direction having the same；The second substrate is pressed together on the barriers, so as to form microfluidic channel between two adjacent spacer bars；One end of the microfluidic channel is immersed in quantum dot ink, so that the quantum dot fill ink is into the microfluidic channel；The quantum dot ink drying being filled into the microfluidic channel, to form the quantum dot light emitting layer in the microfluidic channel.The disclosure can help to realize the homogeneous film formation of quantum dot light emitting layer under high-resolution, facilitate the technology difficulty for reducing high-resolution products, promote device performance and display performance.
Description
Technical field
This disclosure relates to art of display device manufacture, in particular to a kind of production method of display base plate, display device.
Background technique
Light emitting diode with quantum dots (Quantum Dot Light Emitting Diode, QLED) is a kind of emerging
Display device.Compared with other kinds of display device, QLED's is mainly characterized by with performance is more excellent, material is more stable
Quantum dot has unique quantum size effect, macro quanta tunnel effect, skin effect etc. as luminescent material, quantum dot
Feature, showing it, outstanding physical property, especially excellent optical property, such as emission spectrum be narrow, photochromic purity
It is high, luminous efficiency is high, luminescent color is adjustable, stability of photoluminescence is good etc..QLED shows that product has the low in energy consumption, service life as a result,
The advantages that length, excitation purity are high, stability is good has vast potential for future development.However, QLED can not be applied on production method
Small molecule vapor deposition and patterned technique, mostly use printing technology to make in the related art.And printing technology is then limited to device
Part structure design and processes equipment performance, there are bottlenecks in the promotion of film thickness uniformity and resolution ratio.
Summary of the invention
The disclosure provides a kind of production method of display base plate, display device, can help to realize quantum under high-resolution
The homogeneous film formation of point luminescent layer.
In a first aspect, present disclose provides a kind of production method of display base plate, the method includes：
First substrate is made, includes the first surface of quantum dot light emitting layer to be formed on the first substrate；
Barriers are formed on the first surface, and the barriers include several spacer bars, several described barriers
Item extending direction having the same；
The second substrate is pressed together on the barriers, so as to form miniflow between two adjacent spacer bars
Body channel；
One end of the microfluidic channel is immersed in quantum dot ink, so that the quantum dot fill ink is to institute
It states in microfluidic channel；
The quantum dot ink drying being filled into the microfluidic channel, with the shape in the microfluidic channel
At the quantum dot light emitting layer.
In one possible implementation, after the quantum dot fill ink is into the microfluidic channel, institute
The method of stating further includes：
Crosslinking Treatment is carried out to the quantum dot ink in the microfluidic channel.
In one possible implementation, the first substrate includes that multiple subpixel areas by the first color are arranged
At sub-pixel column, it is described to form barriers on the first surface, including：
The figure for forming several spacer bars described in including on the first surface, so that each first color
Subpixel area be respectively positioned between two adjacent spacer bars, and between the every two adjacent sub-pixel column
Region is respectively covered by a spacer bar.
In one possible implementation, the production first substrate, including：
The figure including pixel electrode layer is formed, the pixel electrode layer is in the sub-pixel area of each first color
It respectively include a pixel electrode in domain.
In one possible implementation, it is dried in the quantum dot ink being filled into the microfluidic channel
After dry, the method also includes：
Separate the first substrate and the second substrate.
In one possible implementation, after separating the first substrate and the second substrate, the method
Further include：
Remove the barriers on the first substrate.
In one possible implementation, the method also includes：
After forming the quantum dot light emitting layer, selective etch is carried out to the quantum dot light emitting layer, so that described
Quantum dot light emitting layer has desired thickness and/or pattern.
In one possible implementation, it is formed after barriers on the first surface, the second substrate is pressed
Before on the barriers, the method also includes：
The barriers are surface-treated, so that the top surface of several spacer bars is to be generally aligned in the same plane
Interior flat surfaces.
In one possible implementation, the surface that the second substrate is mutually pressed with the barriers is configured as
Hydrophobic surface.
Second aspect, the disclosure additionally provide a kind of display device, and the display device includes being shown by any one of the above
Show that the production method of panel makes the display base plate to be formed.
As shown from the above technical solution, since microfluidic channel is to be pressed together on the barrier of first substrate by the second substrate
It is formed on layer, and can be according to microfluid by the quantum dot light emitting layer that filling and drying are formed in microfluidic channel
The size and bulk forming in channel, therefore pass through the manufacture craft precision high-resolution quantum easy to accomplish of control barriers
The figure of point luminescent layer, and its film thickness can be accurately controlled under the fixed limitation of the volume of microfluidic channel.As a result, originally
The open homogeneous film formation that can help to realize quantum dot light emitting layer under high-resolution facilitates the work for reducing high-resolution products
Skill difficulty promotes device performance and display performance.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical solution in the embodiment of the present disclosure
The attached drawing used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present disclosure,
The reasonable variation of these attached drawings also all covers in the protection scope of the disclosure.
Fig. 1 is the flow diagram of the production method for the display base plate that an embodiment of the present disclosure provides；
Fig. 2 to Fig. 5 is the manufacturing process schematic diagram for the quantum dot light emitting layer that an embodiment of the present disclosure provides；
Fig. 6 is the structural schematic diagram for the display device that an embodiment of the present disclosure provides.
Specific embodiment
To keep the purposes, technical schemes and advantages of the disclosure clearer, below in conjunction with attached drawing to disclosure embodiment party
Formula is described in further detail.Obviously, described embodiment is a part of this disclosure embodiment, rather than whole
Embodiment.Based on described embodiment of the disclosure, those of ordinary skill in the art are under the premise of being not necessarily to creative work
Every other embodiment obtained belongs to the range of disclosure protection.Unless otherwise defined, the technology that the disclosure uses
Term or scientific term should be the ordinary meaning that the personage in disclosure fields with general technical ability is understood.This
" first ", " second " and similar word used in open are not offered as any sequence, quantity or importance, and only
It is for distinguishing Different Individual." comprising " or similar word mean that the element or object that occur before the word are covered out
The element of the present word presented hereinafter perhaps object and its equivalent and be not excluded for other elements or object." connection " or
The similar word such as " connected " is not limited to physics or mechanical connection, but may include electrical connection, and should
Connection can be direct or indirect.
Fig. 1 is the flow diagram of the production method for the display base plate that an embodiment of the present disclosure provides.Referring to Fig. 1, institute
The method of stating includes：
Step 101 makes first substrate, includes the first surface of quantum dot light emitting layer to be formed on first substrate.
Step 102 forms barriers on the first surface, and barriers include several spacer bars, several spacer bars tool
There is identical extending direction.
The second substrate is pressed together on barriers by step 103, so as to form miniflow between two adjacent spacer bars
Body channel.
One end of microfluidic channel is immersed in quantum dot ink by step 104, so that quantum dot fill ink is to micro-
In fluid channel.
Step 105, the quantum dot ink being filled into microfluidic channel drying, with the forming amount in microfluidic channel
Son point luminescent layer.
It should be noted that it includes quantum dot light emitting layer in any one display device that the display base plate, which can be,
Board structure, and can be display panel, active matrix (Active Matrix) substrate, touch panel (Touch Panel),
Show touch panel, array substrate (Array Substrate), color membrane substrates (Color Filter) or any one
The intermediate products (for example the product motherboard of multiple products can be obtained by cutting) of product in process of production.The quantum
Point luminescent layer may, for example, be the luminescent layer of single color in QLED display panel, can also be, for example, not complete in production
Between the film layer that also needs to be further processed in product, and this can be not limited only to.
It should be understood that above-mentioned first substrate may, for example, be will make quantum in the manufacturing process of display base plate
The display base plate in unfinished state of point luminescent layer；The first surface refers to quantum dot to be formed on first substrate
The surface of luminescent layer may, for example, be and be located at effective display area on the entire upper surface or the first substrate of first substrate
Surface in domain.
In one example, the barriers can be formed using the patterning processes of high-molecular organic material, can be such as
Including：A high-molecular organic material layer is deposited, a photoresist layer is coated in high-molecular organic material layer, by exposing and showing
Shadow removes the photoresist layer of surface to be etched, using dry etching or wet etching removal surface to be etched and below
High-molecular organic material layer, remaining photoresist layer is removed, if so that the high-molecular organic material layer not being removed is rendered as
The dry strip extended in the same direction, that is, form including it is described several spacer bar figure.
In one example, the identical spacer bar of several extending directions in barriers can in one direction successively
Arrangement, the bottom of each spacer bar are combined with the surface of first substrate, and the top surface of each spacer bar is and described second
The shape that the pressing surface of substrate fits.In this way, when the second substrate to be pressed together on barriers, each spacer bar
Top surface fits with the pressing surface of the second substrate, two neighboring spacer bar side relative to each other and first substrate with
The opposite surface of the second substrate surrounds the microfluidic channel.
In one example, the surface characteristic of the shape of microfluidic channel, size and inner surface passes through the first base
Plate, the forming material of the second substrate and barriers and relevant parameter are pre-configured with, so that one end in microfluidic channel is immersed in
When in quantum dot ink, the quantum dot ink with mobility can be filled according to desired mode under the action of capillary force
To in microfluidic channel.For the ease of quantum dot fill ink into microfluidic channel, microfluidic channel can be tilted one
Determine angle.In order to avoid bubble is mixed into quantum dot ink, quantum dot ink can be carried out at degasification (degas) in advance
Reason can also carry out for example applying pressure pulse, transformation air pressure or liquid after quantum dot fill ink to microfluidic channel
The deaeration processing of pressure, dissolution bubble etc..
It should be understood that the quantum dot ink refers to that being capable of forming desired solid state quantum point after drying shines
The fluid of material, wherein can be without the additive for having an impact interior carrier transmission or influence mobility.In quantum dot ink
After being filled into microfluidic channel, such as crosslinking Treatment can be carried out to the quantum dot ink being filled into microfluidic channel
Operation (can also can be carried out simultaneously with drying process before the drying or later).It in one example, can be dry
The additive for being crosslinked it is added in the quantum dot ink that dry forward direction is filled into microfluidic channel, to sufficiently react
It is dried again afterwards.As example, the place that the substance added into quantum dot ink is needed for other or needs to carry out it
Reason is referred to opportune moment progress of the example after quantum dot fill ink is into microfluidic channel.It should be understood that
Be, to the processing of quantum dot ink in each microfluidic channel can be synchronous progress be also possible to separate progress, and can
To be configured within the bounds of possibility according to actual application demand.
It should be understood that the second substrate and/or barriers may be to be not required to for the display base plate to be made
It wants, therefore separation first substrate and the second substrate, and/or removal first can be carried out after forming quantum dot light emitting layer
The operation of barriers on substrate.In one example, the second substrate can be configured as with the surface that first substrate mutually presses
Hydrophobic surface is presented to quantum dot ink, it is possible thereby to help to reduce after quantum dot light emitting layer is formed between the surface
Binding force so that quantum dot light emitting layer be easier be separated from each other with the second substrate.
It will also be appreciated that the quantum dot light emitting layer obtained after dry can be in size (such as thickness and/or picture surface
Product) on be greater than desired production quantum dot light emitting layer, it can intentionally make in the design of microfluidic channel in advance its
Items greater in size than the quantum dot light emitting layer for finally needing to make size, then it is dry formed quantum dot light emitting layer it
Selective etch is carried out to quantum dot light emitting layer afterwards, to make it have desired thickness by removing part quantum dot light emitting layer
Degree and/or pattern.For example, the part that quantum dot light emitting layer is connected between the sub-pixels can be removed by patterning processes, to keep away
Influencing each other between sub-pixel when exempting to shine.
As can be seen that since microfluidic channel is to be pressed together on the barriers of first substrate to be formed by the second substrate,
And in microfluidic channel by filling and drying formed quantum dot light emitting layer can according to microfluidic channel size and
Bulk forming, therefore the figure of the manufacture craft precision high-resolution quantum dot light emitting layer easy to accomplish by control barriers
Shape, and its film thickness can be accurately controlled under the fixed limitation of the volume of microfluidic channel.The embodiment of the present disclosure can as a result,
To help to realize the homogeneous film formation of quantum dot light emitting layer under high-resolution, facilitate the technology difficulty for reducing high-resolution products,
Promote device performance and display performance.
Fig. 2 to Fig. 5 is the manufacturing process schematic diagram for the quantum dot light emitting layer that an embodiment of the present disclosure provides.This implementation
In example, the production method of display base plate includes following processes：
The production of first substrate：First substrate described in the present embodiment is the TFT (Thin of quantum dot light emitting display device
Film Transistor, thin film transistor (TFT)) array backboard.As an example, manufacturing process includes：By transparent substrates
After cleaning and drying, a metallic diaphragm is deposited on a transparent substrate and carries out patterned process, to form gate metal layer
Figure (forming material of gate metal layer is, for example, Mo, and thickness is, for example, 200nm).Then, formed covering gate metal layer and
(forming material of gate insulation layer is, for example, SiO to the gate insulation layer of transparent substrates cleaning2, thickness is, for example, 150nm).It is exhausted in grid
In edge layer, deposits semiconductor film layer and carry out patterned process, to form the figure (forming material of active layer of active layer
E.g. IGZO, thickness are, for example, 40nm).A metallic diaphragm is deposited on gate insulation layer and active layer and is carried out at patterning
Reason, to form the figure of Source and drain metal level (forming material of Source and drain metal level is, for example, Mo, and thickness is, for example, 200nm).So
Afterwards, (forming material of passivation layer is, for example, SiO to the passivation layer of formation covering gate insulation layer, active layer and Source and drain metal level2, thick
Degree e.g. 300nm), and connection via hole is made by patterned process in the passivation layer.Hereafter, one is deposited on the passivation layer
Transparent conductive film layer simultaneously carries out patterned process, and with the figure that forms pixel electrode layer, (forming material of pixel electrode layer is for example
It is tin indium oxide, thickness is, for example, 40nm).
As an example, first substrate include the subpixel area of the first color, the subpixel area of the second color and
The subpixel area of third color, whole subpixel areas line up multiple lines and multiple rows, wherein the sub-pixel in each sub-pixel column
Region is same color.With regard to this, due to needing the quantum dot using different colours to send out in the subpixel area of different colours
Photosphere, therefore the generation type that above-mentioned quantum dot light emitting layer can be respectively adopted successively makes the quantum dot hair of each color
Photosphere.Below by taking the manufacturing process of the quantum dot light emitting layer of the first color as an example, illustrate the quantum dot light emitting layer of each color
Respective manufacturing process.
The production of barriers：Prepared first substrate includes that multiple subpixel areas by the first color are lined up
The sub-pixel column of first color, and respectively include a pixel electrode in each subpixel area, therefore institute is to be formed
Quantum dot light emitting layer needs to cover the sub-pixel column of each the first color, quantum dot light emitting layer to be formed on first substrate
First surface includes the upper surface of each pixel electrode.It on the first surface, can be for example, by using acrylic material as above-mentioned
High-molecular organic material form including it is described several spacer bar figure.It shows on the left of Fig. 5 and is formed on first surface
There are the side view (upper left) and top view (lower-left) of the first substrate of barriers, as shown in Figure 5：On first substrate 10, Mei Ge
One color sub-pixel column (be formed with the sub-pixel column of pixel electrode 11 corresponding with the subpixel area of the first color, other
Pixel electrode 11 in color sub-pixels region is not shown) it is respectively positioned between two adjacent spacer bars 21, and every two
Region between the sub-pixel column of the first adjacent color is respectively covered by a spacer bar 21.It should be understood that each barrier
Item 21 covers the sub-pixel column of other colors between the sub-pixel column of two adjacent first colors, thus subsequent process
In the quantum dot light emitting layer of the first color will not be formed in the subpixel area of other colors.Similarly, in other colors
Quantum dot light emitting layer manufacturing process in can also cover in be formed or not formed quantum dot light emitting layer using the same manner
Sub-pixel column enables the quantum dot light emitting layer of different colours to be formed one by one on the first substrate.
The pressing of the second substrate：The side view (upper right) of the first substrate mutually pressed with the second substrate is shown on the left of Fig. 5
With top view (bottom right), as shown in Figure 5：The second substrate 30 may, for example, be the upper clamp plate of the fixture in laminating mechanism, and fixture
Lower clamp plate 40 can be used for placing first substrate 10；The elastic gel 31 of surfacing is previously provided in the second substrate 30
(the e.g. coat of polydimethylsiloxane), to provide the surface pressed with 10 phase of first substrate.Start in pressing
Before, barriers can be surface-treated for example, by the mode of plasma bombardment, so that the top of several spacer bars
Face is the flat surfaces being in the same plane, so as to be preferably bonded with the surface of the second substrate 30.It is pressing
In the process, first 10 first surface of first substrate for being formed with barriers can be placed into upward on the lower clamp plate 40 of fixture,
Then it will relatively be pressed as the second substrate 30 of upper clamp plate with first substrate 10 on lower clamp plate 40 is placed on using laminating mechanism
It is combined, so that forming a microfluidic channel between every two adjacent spacer bar 21, (its upper surface is elastic gel 31
Lower surface, lower surface be first substrate 10 include 11 surface of pixel electrode upper surface).
The filling of quantum dot ink：Fig. 6 shows first substrate and is immersed in quantum from mutually pressing to one end with the second substrate
State change between in point ink, as shown in Figure 6：It is keeping the second substrate 30 as upper clamp plate and is being placed on lower clamp plate
In the case where stitching state on 40 between first substrate 10, it is moved to and is contained with after control fixture integral-rotation certain angle
In the liquid pool of quantum dot ink 50 so that one end of each microfluidic channel can be immersed in the liquid level of quantum dot ink 50 with
Under.The quantum dot ink 50 in liquid pool can gradually fill microfluidic channel from the bottom to top under the action of capillary force as a result,
Complete the filling of quantum dot ink 50.
The drying of quantum dot ink：Fig. 4 shows first substrate and is immersed in quantum dot ink from one end to completion quantum
State change between the drying of point ink, as shown in Figure 4：In the case where keeping the second substrate 30 as upper clamp plate and being placed on
In the case where stitching state on clamping plate 40 between first substrate 10, control fixture rotates back to horizontality while removing liquid pool,
Quantum dot ink 50 can be retained in microfluidic channel by capillary force at this time, then can be dried for example, by using heat radiation
Mode heats first substrate 10 and the second substrate 30, and quantum dot ink 50 in microfluidic channel is being oven-dried
Reaction is crosslinked simultaneously, to be formed by curing the first color quantum dot light emitting layer 60.It should be understood that can also be to match
The form closed or substituted is crosslinked quantum dot ink 50 by adding crosslinking agent, while the form dried can also can also be
Heat transfer or thermal convection, drying and crosslinking can also be carried out successively respectively, and can be not limited only to this.
The separation of first substrate and the second substrate：Fig. 4 shows first substrate from the drying of quantum dot ink is completed to complete
At the state change between the separation of the second substrate, as shown in Figure 4：After forming the first color quantum dot light emitting layer 60,
Can under horizontal attitude release fixture two clamping plates between pressure, then can use cutter elastic gel 31 with
It cuts out an osculum between the dottle pin item 21 of most edge, then is starting point from the osculum and elastic gel 31 is gradually torn off the
One substrate 10.Certainly, above-mentioned example can be not limited only to by separating first substrate and the mode of the second substrate.
Post-processing：Fig. 5 is shown barriers are removed from first substrate 10 after, be integrally thinned by selective etch
The structure of first substrate after the quantum dot light emitting layer 60 of first color.As shown in figure 5, the first base by above-mentioned processing
The quantum dot light emitting layer 61 of the sub-pixel column of the first color of covering is formed on plate 10, it hereafter can be on this basis according to upper
The process of stating continues to make the quantum dot light emitting layer of other colors, and ultimately forms the product of required display base plate.
Based on same inventive concept, the embodiment of the present disclosure provides a kind of display device, which includes by above-mentioned
The display base plate that the manufacturing method of the display base plate of any one obtains.Display device in the embodiment of the present disclosure can be：It is aobvious
Showing that panel, mobile phone, tablet computer, television set, display, laptop, Digital Frame, navigator etc. are any has display
The products or components of function.In one example, as shown in Fig. 6, display device includes the son of ranks setting in display area
Pixel unit Px, wherein being formed through the quantum dot hair that any one of the above mode is formed in each sub-pixel unit Px
Photosphere.The embodiment of the present disclosure can help to realize the homogeneous film formation of quantum dot light emitting layer under high-resolution, help to reduce high score
The technology difficulty of resolution product promotes device performance and display performance.
The foregoing is merely embodiment of the disclosure, not to limit the disclosure, all spirit and principle in the disclosure
Within, any modification, equivalent replacement, improvement and so on should be included within the protection scope of the disclosure.
Claims (10)
1. a kind of production method of display base plate, which is characterized in that the method includes：
First substrate is made, includes the first surface of quantum dot light emitting layer to be formed on the first substrate；
Barriers are formed on the first surface, and the barriers include several spacer bars, several spacer bars tool
There is identical extending direction；
The second substrate is pressed together on the barriers, so that it is logical to form microfluid between two adjacent spacer bars
Road；
One end of the microfluidic channel is immersed in quantum dot ink, so that the quantum dot fill ink is to the miniflow
In body channel；
The quantum dot ink drying being filled into the microfluidic channel, described in being formed in the microfluidic channel
Quantum dot light emitting layer.
2. the method according to claim 1, wherein in the quantum dot fill ink to the microfluidic channel
In after, the method also includes：
Crosslinking Treatment is carried out to the quantum dot ink in the microfluidic channel.
3. the method according to claim 1, wherein the first substrate includes multiple sub- pictures by the first color
The sub-pixel column that plain region is lined up, it is described to form barriers on the first surface, including：
The figure for forming several spacer bars described in including on the first surface, so that the sub- picture of each first color
Plain region is respectively positioned between two adjacent spacer bars, and the region between the every two adjacent sub-pixel column is respectively
By a spacer bar covering.
4. according to the method described in claim 3, it is characterized in that, the production first substrate, including：
The figure including pixel electrode layer is formed, the pixel electrode layer is each in the subpixel area of each first color
From including a pixel electrode.
5. the method according to claim 1, wherein in the quantum being filled into the microfluidic channel
After point ink drying, the method also includes：
Separate the first substrate and the second substrate.
6. according to the method described in claim 5, it is characterized in that, separate the first substrate and the second substrate it
Afterwards, the method also includes：
Remove the barriers on the first substrate.
7. the method according to claim 1, wherein the method also includes：
After forming the quantum dot light emitting layer, selective etch is carried out to the quantum dot light emitting layer, so that the quantum
Point luminescent layer has desired thickness and/or pattern.
8. the method according to claim 1, wherein being formed after barriers on the first surface, by the
Before two substrates are pressed together on the barriers, the method also includes：
The barriers are surface-treated so that the top surface of several spacer bars be in the same plane it is flat
Smooth surface.
9. the method according to claim 1, wherein the surface that the second substrate is mutually pressed with the barriers
It is configured as hydrophobic surface.
10. a kind of display device, which is characterized in that the display device includes square as claimed in any one of claims 1-9 wherein
Legal system makees the display base plate to be formed.
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| CN201810708937.2A CN108878690B (en) | 2018-07-02 | 2018-07-02 | Manufacturing method of display substrate and display device |
| US16/446,722 US11005081B2 (en) | 2018-07-02 | 2019-06-20 | Coating method, display substrate and manufacturing method thereof, and display device |
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| CN112768587A (en) * | 2021-01-20 | 2021-05-07 | 中国科学院长春光学精密机械与物理研究所 | Quantum dot color conversion layer and preparation method thereof |
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| CN112863377B (en) * | 2021-01-11 | 2023-01-10 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method of quantum dot color filter and display panel |
| CN112635515B (en) * | 2021-01-20 | 2022-08-16 | 中国科学院长春光学精密机械与物理研究所 | MicroLED display device based on quantum dot color conversion layer and preparation method thereof |
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| US11005081B2 (en) | 2021-05-11 |
| US20200006711A1 (en) | 2020-01-02 |
| CN108878690B (en) | 2020-04-28 |
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