CN108878405A - A kind of protective device and preparation method thereof, electronic equipment - Google Patents
A kind of protective device and preparation method thereof, electronic equipment Download PDFInfo
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- CN108878405A CN108878405A CN201810708315.XA CN201810708315A CN108878405A CN 108878405 A CN108878405 A CN 108878405A CN 201810708315 A CN201810708315 A CN 201810708315A CN 108878405 A CN108878405 A CN 108878405A
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- Prior art keywords
- chip
- interconnecting piece
- guard block
- protective device
- semiconductor chip
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
The invention discloses a kind of protective devices and preparation method thereof, electronic equipment.The protective device includes lead frame and guard block; lead frame includes the first pin configuration and second pin structure; first chip interconnecting piece of the first pin configuration is electrically connected with the first surface of semiconductor chip; the first end of guard block is electrically connected with the second surface of semiconductor chip; the second end of guard block is electrically connected with the second chip interconnecting piece of second pin structure, and the electric current that guard block is used to flow through on it is disconnected beyond its through-current capability.The protective device is on the basis of improving the manufacture efficiency of device, reducing the manufacturing cost of device, enable protective device open failure under conditions of electric current is drawn high suddenly, it effectively prevents component in circuit to burn, improves the security reliability of electronic device works.
Description
Technical field
The present embodiments relate to protective device technology more particularly to a kind of protective device and preparation method thereof, electronics to set
It is standby.
Background technique
Electronic equipment is in industries such as automotive electronics, communication, new energy, security protection, consumer electronics, industrial electronic, medical electronics
It is widely used.In order to guarantee work that electronic equipment can be safe and reliable, mostly use protective device to electronic equipment
Circuit protected.
In the prior art, the multipair electronic equipment of protective device carries out lightning strike protection, however, when lightning stroke voltage or electric current are super
Out when protective device performance boundary itself, puncture short phenomenon can be presented, uprush so as to cause the operating current of circuit, burn electricity
Other components in road.With the raising of component integrated level in electronic equipment and the frequency upgrading used, the work of circuit
Make voltage and current also to increase accordingly, be more subject to be struck by lightning, therefore, puncture short occurs in the protective device in existing electronic equipment
Phenomenon aggravation, has seriously affected the safe and reliable work of electronic equipment.
Summary of the invention
The present invention provides a kind of protective device and preparation method thereof, electronic equipment, and it is short breakdown occur to avoid protective device
Road phenomenon promotes the security reliability of electronic device works.
In a first aspect, the embodiment of the invention provides a kind of protective device, the protective device includes：
Semiconductor chip, the semiconductor chip include the first surface and second surface being oppositely arranged；
Lead frame, the lead frame include the first pin configuration and second pin structure, first pin configuration
Including the first chip interconnecting piece, the first chip interconnecting piece is electrically connected with the first surface of the semiconductor chip, and described
Two pin configurations include the second chip interconnecting piece；
Guard block, the guard block include first end and second end, the first end of the guard block and described half
The second surface of conductor chip is electrically connected, and second end is electrically connected with the second chip interconnecting piece of the second pin structure, described
The electric current that guard block is used to flow through on it is disconnected beyond its through-current capability.
Optionally, the protective device further includes：Plastic package structure, the plastic package structure encapsulate the semiconductor chip, institute
State the first chip interconnecting piece, the second chip interconnecting piece and the guard block.
Optionally, the protective device further includes：First connection structure and the second connection structure；
The first end of the guard block is electrically connected the semiconductor chip by first connection structure, and described first
Connection structure is greater than the guard block with the contact area of the second surface of the semiconductor chip and connect knot with described first
The contact area of structure；
The second end of the guard block is electrically connected the second chip interconnecting piece by second connection structure, described
Second connection structure and the contact area of the second chip interconnecting piece are greater than the guard block and second connection structure
Contact area.
Optionally, first connection structure and second connection structure are tin cream piece or copper sheet.
Optionally, the guard block is conducting wire.
Optionally, the protective device further includes third connection structure；The third connection structure is located at the semiconductor
Between the first surface of chip and the first chip interconnecting piece, and with the first surface of the semiconductor chip and described
The contact of one chip interconnecting piece.
Optionally, the material of the third connection structure is tin cream.
Optionally, first pin configuration further includes the first external connection portion and the first bending part, first external connection portion by
The inside of the plastic package structure extends to the external of the plastic package structure, and with the first chip interconnecting piece antarafacial；Described
One bending part is connected between the first chip interconnecting piece and first external connection portion, and first bending part is by described first
Chip interconnecting piece is bent to the first external connection portion；
The second pin structure further includes the second external connection portion and the second bending part, and second external connection portion is by the plastic packaging
The inside of structure extends to the external of the plastic package structure, and with the second chip interconnecting piece antarafacial；Second bending part
It is connected between the second chip interconnecting piece and second external connection portion, second bending part is connected by second chip
Portion is bent to the second external connection portion.
Optionally, one side of first external connection portion far from the semiconductor chip is with second external connection portion far from described
The one side of semiconductor chip is coplanar.
Optionally, the semiconductor chip is transient voltage suppressor chip or solid discharge tube chip.
Second aspect, the embodiment of the invention also provides a kind of electronic equipment, the electronic equipment includes：The present invention is any
Protective device described in embodiment.
The third aspect, the system for the protective device that the embodiment of the invention also provides a kind of as described in any embodiment of that present invention
Make method, the production method of the protective device includes：
The semiconductor chip and the lead frame are provided；
The semiconductor chip is adhered to the first chip interconnecting piece of first pin configuration of the lead frame；
The first end of the guard block is welded in the second surface of the semiconductor chip, by the guard block
Second end is welded in the second chip interconnecting piece of the second pin structure.
Optionally, in the second chip interconnecting piece that the second end of the guard block is welded in the second pin structure
Later, further include：
Semiconductor chip described in plastic packaging, the first chip interconnecting piece of first pin configuration, the second pin structure
The second chip interconnecting piece and the guard block.
Optionally, the first end by the guard block is welded in the second surface of the semiconductor chip, by institute
The second end for stating guard block is welded in the second chip interconnecting piece of the second pin structure and includes：
The first end of the guard block is welded in first connection structure by the first connection structure, described
One connection structure is greater than the guard block with the contact area of the second surface of the semiconductor chip and connect with described first
The contact area of structure；
The second end of the guard block is welded in second connection structure by the second connection structure, described
Two connection structures and the contact area of the second chip interconnecting piece are greater than the guard block and second connection structure
Contact area.
The present invention includes the first pin configuration and second pin structure by setting lead frame, and the of the first pin configuration
One chip interconnecting piece is electrically connected with the first surface of semiconductor chip, the first end of guard block and the second table of semiconductor chip
Face electrical connection, the second end of guard block are electrically connected with the second chip interconnecting piece of second pin structure, and guard block is used for
The electric current flowed through thereon is disconnected beyond its through-current capability, and compared with the prior art is using stepped construction, the embodiment of the present invention is adopted
With the structure of single frame, and guard block is set between semiconductor chip and second pin structure, solves existing anti-
Shield device cannot achieve open circuit protecting function and the low problem of manufacture efficiency, has reached and has improved the manufacture efficiency of device, reduces
On the basis of the manufacturing cost of device, enable protective device open failure under conditions of electric current is drawn high suddenly, effectively keeps away
Exempt from component in circuit to burn, improves the security reliability of electronic device works.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the protective device of existing one kind；
Fig. 2 is a kind of structural schematic diagram of protective device provided in an embodiment of the present invention；
Fig. 3 is the top view of Fig. 2；
Fig. 4 is the schematic diagram of the section structure of the A-A ' along Fig. 3；
Fig. 5 is the structural schematic diagram of another protective device provided in an embodiment of the present invention；
Fig. 6 is the top view of Fig. 5；
Fig. 7 is the schematic diagram of the section structure of the B-B ' along Fig. 6；
Fig. 8 is the structural schematic diagram of another protective device provided in an embodiment of the present invention；
Fig. 9 is the structural schematic diagram of a kind of electronic equipment provided in an embodiment of the present invention；
Figure 10 is a kind of flow chart of the production method of protective device provided in an embodiment of the present invention；
Figure 11 is the flow chart of the production method of another protective device provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
Fig. 1 is the structural schematic diagram of the protective device of existing one kind.Referring to Fig. 1, the structure of existing protective device is
Trilaminate stack structure, semiconductor chip 10 are set between the first frame structure 91 and the second frame structure 92.First frame knot
Structure 91 and the second frame structure 92 are respectively formed two pins of protective device.Due to semiconductor chip 10 be oppositely arranged first
Surface and second surface are bonded with the first frame structure 91 and the second frame structure 92 respectively, cannot achieve open circuit protecting function,
It is easy to happen puncture short and influences the safe and reliable work of electronic equipment.And the structure of the protective device is in manufacturing process
In need using 2 frame structures (i.e. the first frame structure 91 and the second frame structure 92), using eutectic sintering process, technique
Complexity, manufacture efficiency are low and at high cost.
In view of this, the embodiment of the invention provides a kind of protective devices.Fig. 2 is provided in an embodiment of the present invention a kind of anti-
The structural schematic diagram of device is protected, Fig. 3 is the top view of Fig. 2, and Fig. 4 is the schematic diagram of the section structure of the A-A ' along Fig. 3.Referring to fig. 2-
Fig. 4, the protective device include：Semiconductor chip 10, lead frame 20 and guard block 30.Semiconductor chip 10 includes opposite sets
The first surface 11 and second surface 12 set, lead frame 20 include the first pin configuration 21 and second pin structure 22, first
Pin configuration 21 includes the first chip interconnecting piece 211,11 electricity of first surface of the first chip interconnecting piece 211 and semiconductor chip 10
Connection, second pin structure 22 include the second chip interconnecting piece 221, and guard block 30 includes first end 31 and second end 32, are protected
The first end 31 of shield component 30 is electrically connected with the second surface 12 of semiconductor chip 10, second end 32 and second pin structure 22
The electrical connection of second chip interconnecting piece 221, the electric current that guard block 30 is used to flow through on it are disconnected beyond its through-current capability.
Wherein, lead frame 20 includes the first pin configuration 21 and second pin structure 22, i.e. the protective device can be adopted
With the structure and manufacturing process of single frame, simple process, control easy to process improves manufacture efficiency, reduce manufacture at
This.On this basis, protection is arranged in protective device provided by the invention between semiconductor chip 10 and second pin structure 22
Component 30, the guard block 30 can exceed it under conditions of electric current is drawn high suddenly in circuit (for example, surge over voltage overcurrent)
Through-current capability and disconnect, realize protective device inside function of open, so that integrated circuit be protected not to be burned out.
The embodiment of the present invention by setting lead frame 20 include the first pin configuration 21 and second pin structure 22, first
First chip interconnecting piece 211 of pin configuration 21 is electrically connected with the first surface 11 of semiconductor chip 10, and guard block 30 is arranged
First end 31 be electrically connected with the second surface 12 of semiconductor chip 10, the second end 32 of guard block 30 and second pin structure
22 the second chip interconnecting piece 221 electrical connection, the electric current that guard block 30 is used to flow through on it break beyond its through-current capability
It opens, compared with the prior art is using stepped construction, the embodiment of the present invention uses the structure of single frame, and in semiconductor chip 10
Guard block 30 is set between second pin structure 22, solving existing protective device cannot achieve open circuit protecting function,
And the problem that manufacture efficiency is low, on the basis of having reached the manufacture efficiency for improving device, the manufacturing cost of reduction device, so that
Protective device can under conditions of electric current is drawn high suddenly open failure, effectively prevent component in circuit and burn, improve
The security reliability of electronic device works.
On the basis of the various embodiments described above, optionally, which is transient voltage suppressor chip, admittedly
Body discharge tube chip or other semiconductor chips with circuit safeguard function, the present invention is without limitation.If semiconductor chip is
Transient voltage suppressor chip, the protective device of formation are transient voltage suppressor (Transient Voltage
Suppressor, TVS), TVS provided in an embodiment of the present invention can not only with higher speed the impedance value between its both ends by height
Impedance becomes Low ESR, to absorb an instantaneous large-current, both end voltage strangulation one it is scheduled numerically, additionally it is possible to
Open failure under conditions of electric current is drawn high suddenly, so that impact of the late-class circuit element not by high voltage transient spike is protected,
Security reliability is higher.If semiconductor chip is solid discharge tube chip, the protective device of formation is solid state discharge tube
(Thyristor Surge Suppresser, TSS), TSS provided in an embodiment of the present invention is a kind of over-voltage protector, benefit
It is made of thyristor principle, not only electric discharge can be connected by the breakdown current trigger device of the PN junction of semiconductor chip, it can be with
Flow through very big surge current or pulse current, additionally it is possible to open failure under conditions of electric current is drawn high suddenly, thus after protection
Grade circuit element, security reliability are higher.
With continued reference to Fig. 2-Fig. 4, on the basis of the various embodiments described above, optionally, guard block 30 is conducting wire.The conducting wire
It under conditions of electric current is drawn high suddenly in circuit (for example, surge over voltage overcurrent), can fuse, realize beyond its through-current capability
Function of open inside protective device, so that integrated circuit be protected not to be burned out.And the manufacture of protective device can use single
Frame bonding wire (conducting wire) technique, conducting wire both ends using solder paste coating weld, manufacturing process is further simplified and cost is further
It reduces.
Wherein it is possible to reach design by the length, diameter and the material that calculate conducting wire wire rod to select suitable wire rod
Through-current capability demand realizes open failure function so that wire rod fuses when beyond wire rod tolerance electric current, plays cutting circuit and protects
It protects other components and is not burned out purpose.
Fig. 5 is the structural schematic diagram of another protective device provided in an embodiment of the present invention, and Fig. 6 is the top view of Fig. 5, figure
7 be the schematic diagram of the section structure of the B-B ' along Fig. 6.Referring to Fig. 5-Fig. 7, on the basis of the various embodiments described above, optionally, protection
Device further includes the first connection structure 51 and the second connection structure 52.The first end 31 of guard block 30 passes through the first connection structure
The contact area of 51 electrical connection semiconductor chips 10, the first connection structure 51 and the second surface 12 of semiconductor chip 10, which is greater than, protects
Protect the contact area of component 30 and the first connection structure 51.The second end 32 of guard block 30 is electrically connected by the second connection structure 52
Connect the second chip interconnecting piece 221, the contact area of the second connection structure 52 and the second chip interconnecting piece 221 is greater than guard block 30
With the contact area of the second connection structure 52.It includes that the first connection structure 51 and second connects that protective device, which is arranged, in the embodiment of the present invention
Binding structure 52 increases the second of guard block 30 and semiconductor chip 10 and guard block 30 and second pin structure 22 respectively
The contact area of chip interconnecting piece 221 increases the heat dissipation area at 30 both ends of guard block, avoid protective device and flowing through
When high current, guard block 30 and the junction of semiconductor chip 10 or the company of guard block 30 and the second chip interconnecting piece 221
The place of connecing is overheated there is a phenomenon where fusing, and therefore, which can be applied not only to low current protection circuit, additionally it is possible to suitable
For high current protection circuit, the quality of protective device is improved, expands the application range of protective device.
With continued reference to Fig. 5-Fig. 7, on the basis of the various embodiments described above, optionally, the first connection structure 51 and second connects
Binding structure 52 is tin cream piece or copper sheet, and tin cream piece and copper sheet all have good heat dissipation performance, is mentioned using tin cream piece or copper sheet
The heat dissipation performance for having risen the first connection structure 51 and the second connection structure 52, plays firm connection function, improves protector
The quality of part.In addition, tin cream piece also has the function of welding, tied using tin cream piece as the first connection structure 51 and the second connection
Structure 52, it is only necessary to which the both ends of guard block 30 can be respectively welded at semiconductor chip 10 and the second core by welding procedure twice
On piece interconnecting piece 221, the structure and manufacture craft of protective device are simplified.
It should be noted that schematically illustrating the first connection structure 51 and the second connection structure 52 in Fig. 5-Fig. 7
Shape is that section is circular cylinder, not limitation of the invention, in other embodiments, the first connection structure 51 and second
The shape of connection structure 52 be can also be set as needed for section be ellipse or polygon cylinder, or be set as cut
Face is the cylinder of a variety of round, ellipses or polygon combination.
With continued reference to Fig. 5 and Fig. 7, on the basis of the various embodiments described above, optionally, protective device further includes third connection
Structure 53, third connection structure 53 are located between the first surface 11 of semiconductor chip 10 and the first chip interconnecting piece 211, and with
The first surface 11 of semiconductor chip 10 and the contact of the first chip interconnecting piece 211, to realize that semiconductor chip 10 draws with first
The electrical connection of leg structure 21.
On the basis of the various embodiments described above, optionally, the material of third connection structure 53 is tin cream, to realize semiconductor
Chip 10 is electrically connected with the first pin configuration 21.
Fig. 8 is the structural schematic diagram of another protective device provided in an embodiment of the present invention.Referring to Fig. 8, in above-mentioned each reality
On the basis of applying example, optionally, protective device further includes plastic package structure 40,40 packaged semiconductor 10, first of plastic package structure
Chip interconnecting piece 211, the second chip interconnecting piece 221 and guard block 30, form the shell of protective device, and plastic package structure 40 plays
Fixation, sealing, protection semiconductor chip 10 and the effect for enhancing electric heating property etc., and be easily installed and transport.This
Inventive embodiments using plastic packaging encapsulate, compared with existing protective device is using ceramic package, plastic packaging encapsulate batch micro operations at
This is low and is conducive to reduce the volume and size of protective device.
With continued reference to Fig. 8, on the basis of the above embodiments, optionally, the first pin configuration 21 further includes first external
Portion 213 and the first bending part 212, the first external connection portion 213 are extended from the inside of plastic package structure 40 to the external of plastic package structure 40, and
With 211 antarafacial of the first chip interconnecting piece, the first bending part 212 be connected to the first chip interconnecting piece 211 and the first external connection portion 213 it
Between, the first bending part 212 is bent from the first chip interconnecting piece 211 to the first external connection portion 213.Second pin structure 22 further includes
Two external connection portions 223 and the second bending part 222, the second external connection portion 223 is from the inside of plastic package structure 40 to the outside of plastic package structure 40
Extend, and with 221 antarafacial of the second chip interconnecting piece；It is external that second bending part 222 is connected to the second chip interconnecting piece 221 and second
Between portion 223, the second bending part 222 is bent from the second chip interconnecting piece 221 to the second external connection portion 223.First pin configuration 21
It is provided with second pin structure 22 and is connected conducive to protective device with other devices in this way, to realize inside chip and outside
The connection of circuit.
Optionally, one side of first external connection portion 213 far from semiconductor chip 10 is with the second external connection portion 223 far from semiconductor core
The one side of piece 10 is coplanar, is conducive to protective device and preferably welds on circuit boards.
The embodiment of the invention also provides a kind of electronic equipment.Fig. 9 is a kind of electronic equipment provided in an embodiment of the present invention
Structural schematic diagram, referring to Fig. 9, which includes：The protective device that any embodiment of that present invention provides.Such as the electronics
Equipment can be computer in the devices such as automotive electronics, communication, new energy, security protection, consumer electronics, industrial electronic, medical electronics,
Navigator or camera etc..
Electronic equipment provided in an embodiment of the present invention, the lead frame by the way that protective device is arranged include the first pin configuration
It is electrically connected, is arranged with the first surface of semiconductor chip with the first chip interconnecting piece of second pin structure, the first pin configuration
The first end of guard block is electrically connected with the second surface of semiconductor chip, second end and the second pin structure of guard block
The electrical connection of second chip interconnecting piece, guard block are used for the electric current that flows through on it and disconnect beyond its through-current capability, and existing
Technology is compared using stepped construction, and the embodiment of the present invention uses the structure of single frame, and in semiconductor chip and second pin
Guard block is set between structure, solves that existing protective device cannot achieve open circuit protecting function and manufacture efficiency is low
The problem of, on the basis of having reached the manufacture efficiency for improving device, the manufacturing cost of reduction device, protective device is existed
Open failure under conditions of electric current is drawn high suddenly effectively prevents component in circuit and burns, improves electronic device works
Security reliability.
The embodiment of the invention also provides a kind of production methods for the protective device that any embodiment of that present invention provides.Figure 10
For a kind of flow chart of the production method of protective device provided in an embodiment of the present invention.Referring to Figure 10, the production method include with
Lower step：
S100, semiconductor chip and lead frame are provided.
S200, semiconductor chip is adhered to lead frame the first pin configuration the first chip interconnecting piece.
S300, the second surface that the first end of guard block is welded in semiconductor chip, by the second end of guard block
It is welded in the second chip interconnecting piece of second pin structure.
The production method of protective device provided in an embodiment of the present invention is by being adhered to lead frame for semiconductor chip
The first end of guard block, is welded in the second surface of semiconductor chip by the first chip interconnecting piece of the first pin configuration, will
The second end of guard block is welded in the second chip interconnecting piece of second pin structure, uses stepped construction phase with the prior art
Than the embodiment of the present invention uses the structure of single frame (lead frame), and between semiconductor chip and second pin structure
Guard block is set, and solving existing protective device cannot achieve open circuit protecting function and the low problem of manufacture efficiency, reach
It has arrived on the basis of the manufacture efficiency for improving device, the manufacturing cost of reduction device, has enabled protective device unexpected in electric current
Open failure under conditions of drawing high effectively prevents component in circuit and burns, improves the safe and reliable of electronic device works
Property.
With continued reference to Figure 10, on the basis of the above embodiments, optionally, welded in S300, by the first end of guard block
It is connected to the second surface of semiconductor chip, the second end of guard block is welded in the second chip interconnecting piece of second pin structure
It later, further include step：
S400, epoxy seal semiconductor chip, the first chip interconnecting piece of the first pin configuration, second pin structure the second core
Piece interconnecting piece and guard block, with the effect of fixation, sealing, protection semiconductor chip and enhancing electric heating property etc., and
It is easily installed and transports.The embodiment of the present invention is encapsulated using plastic packaging, compared with existing protective device is using ceramic package, plastic packaging
The cost of encapsulation batch micro operations is low and is conducive to reduce the volume and size of protective device.
Figure 11 is the flow chart of the production method of another protective device provided in an embodiment of the present invention.Referring to Figure 11,
On the basis of the various embodiments described above, optionally, S300, the second table that the first end of guard block is welded in semiconductor chip
The second chip interconnecting piece that the second end of guard block is welded in second pin structure is included step by face：
S310, the first end of guard block is welded in the first connection structure by the first connection structure, the first connection
The contact area of the second surface of structure and semiconductor chip is greater than the contact area of guard block and the first connection structure.
S320, the second end of guard block is welded in the second connection structure by the second connection structure, the second connection
Structure and the contact area of the second chip interconnecting piece are greater than the contact area of guard block and the second connection structure.
The guard block that protective device is arranged in the embodiment of the present invention passes through the second of the first connection structure and semiconductor chip
Surface electrical connection and guard block are electrically connected by the second connection structure with the second chip interconnecting piece, the first connection structure with
Second connection structure increases the second chip of guard block Yu semiconductor chip and guard block and second pin structure respectively
The contact area of interconnecting piece increases the heat dissipation area at guard block both ends, avoid protective device when flowing through high current,
The junction or guard block of guard block and semiconductor chip and the junction of the second chip interconnecting piece overheat and fuse
The phenomenon that, therefore, which can be applied not only to low current protection circuit, additionally it is possible to be suitable for high current protection electricity
Road improves the quality of protective device, expands the application range of protective device.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (14)
1. a kind of protective device, which is characterized in that including：
Semiconductor chip, the semiconductor chip include the first surface and second surface being oppositely arranged；
Lead frame, the lead frame include the first pin configuration and second pin structure, and first pin configuration includes
First chip interconnecting piece, the first chip interconnecting piece are electrically connected with the first surface of the semiconductor chip, and described second draws
Leg structure includes the second chip interconnecting piece；
Guard block, the guard block include first end and second end, the first end of the guard block and the semiconductor
The second surface of chip is electrically connected, and second end is electrically connected with the second chip interconnecting piece of the second pin structure, the protection
The electric current that component is used to flow through on it is disconnected beyond its through-current capability.
2. protective device according to claim 1, which is characterized in that further include：Plastic package structure, the plastic package structure encapsulation
The semiconductor chip, the first chip interconnecting piece, the second chip interconnecting piece and the guard block.
3. protective device according to claim 1, which is characterized in that further include：First connection structure and the second connection knot
Structure；
The first end of the guard block is electrically connected the semiconductor chip, first connection by first connection structure
The contact area of the second surface of structure and the semiconductor chip is greater than the guard block and first connection structure
Contact area；
The second end of the guard block is electrically connected the second chip interconnecting piece by second connection structure, and described second
The contact area of connection structure and the second chip interconnecting piece is greater than connecing for the guard block and second connection structure
Contacting surface product.
4. protective device according to claim 3, which is characterized in that first connection structure and the second connection knot
Structure is tin cream piece or copper sheet.
5. protective device according to claim 1, which is characterized in that the guard block is conducting wire.
6. protective device according to claim 1, which is characterized in that further include third connection structure；The third connection
Structure is located between the first surface and the first chip interconnecting piece of the semiconductor chip, and with the semiconductor chip
First surface and the first chip interconnecting piece contact.
7. protective device according to claim 6, which is characterized in that the material of the third connection structure is tin cream.
8. protective device according to claim 2, which is characterized in that first pin configuration further includes the first external connection portion
With the first bending part, first external connection portion is extended from the inside of the plastic package structure to the external of the plastic package structure, and with
The first chip interconnecting piece antarafacial；First bending part is connected to the first chip interconnecting piece and first external connection portion
Between, first bending part is bent from the first chip interconnecting piece to the first external connection portion；
The second pin structure further includes the second external connection portion and the second bending part, and second external connection portion is by the plastic package structure
Inside extend to the external of the plastic package structure, and with the second chip interconnecting piece antarafacial；The second bending part connection
Between the second chip interconnecting piece and second external connection portion, second bending part from the second chip interconnecting piece to
The bending of second external connection portion.
9. protective device according to claim 8, which is characterized in that first external connection portion is far from the semiconductor chip
With second external connection portion far from the semiconductor chip while it is coplanar.
10. protective device according to claim 1, which is characterized in that the semiconductor chip is that transient voltage inhibits two
Pole pipe chip or solid discharge tube chip.
11. a kind of electronic equipment, which is characterized in that including：The described in any item protective devices of claim 1-10.
12. a kind of production method of such as described in any item protective devices of claim 1-10, which is characterized in that including：
The semiconductor chip and the lead frame are provided；
The semiconductor chip is adhered to the first chip interconnecting piece of first pin configuration of the lead frame；
The first end of the guard block is welded in the second surface of the semiconductor chip, by the second of the guard block
End is welded in the second chip interconnecting piece of the second pin structure.
13. the production method of protective device according to claim 12, which is characterized in that by the of the guard block
Two ends are welded in after the second chip interconnecting piece of the second pin structure, further include：
Semiconductor chip described in plastic packaging, the first chip interconnecting piece of first pin configuration, the second pin structure
Two chip interconnecting pieces and the guard block.
14. the production method of protective device according to claim 12, which is characterized in that described by the guard block
First end is welded in the second surface of the semiconductor chip, and the second end of the guard block is welded in the second pin
Second chip interconnecting piece of structure includes：
The first end of the guard block is welded in first connection structure by the first connection structure, described first connects
The contact area of the second surface of binding structure and the semiconductor chip is greater than the guard block and first connection structure
Contact area；
The second end of the guard block is welded in second connection structure by the second connection structure, described second connects
Binding structure is greater than the contact of the guard block and second connection structure with the contact area of the second chip interconnecting piece
Area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810708315.XA CN108878405A (en) | 2018-07-02 | 2018-07-02 | A kind of protective device and preparation method thereof, electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810708315.XA CN108878405A (en) | 2018-07-02 | 2018-07-02 | A kind of protective device and preparation method thereof, electronic equipment |
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| Publication Number | Publication Date |
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| CN108878405A true CN108878405A (en) | 2018-11-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810708315.XA Pending CN108878405A (en) | 2018-07-02 | 2018-07-02 | A kind of protective device and preparation method thereof, electronic equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113823586A (en) * | 2021-11-24 | 2021-12-21 | 江西萨瑞微电子技术有限公司 | Open circuit protection device and packaging system thereof |
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| CN113823586B (en) * | 2021-11-24 | 2022-02-18 | 江西萨瑞微电子技术有限公司 | Packaging system of open circuit protection device |
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