CN108878383B - 一种高性能ipm封装模块及其制备方法 - Google Patents
一种高性能ipm封装模块及其制备方法 Download PDFInfo
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- CN108878383B CN108878383B CN201810672046.6A CN201810672046A CN108878383B CN 108878383 B CN108878383 B CN 108878383B CN 201810672046 A CN201810672046 A CN 201810672046A CN 108878383 B CN108878383 B CN 108878383B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000011347 resin Substances 0.000 claims abstract description 126
- 229920005989 resin Polymers 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000000565 sealant Substances 0.000 claims abstract description 55
- 230000017525 heat dissipation Effects 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000009413 insulation Methods 0.000 claims abstract description 24
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 26
- 238000005520 cutting process Methods 0.000 claims description 19
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 239000004952 Polyamide Substances 0.000 claims description 10
- 229920002647 polyamide Polymers 0.000 claims description 10
- 239000000843 powder Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 claims description 5
- 239000003365 glass fiber Substances 0.000 claims description 5
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 5
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000391 magnesium silicate Substances 0.000 claims description 5
- 229910052919 magnesium silicate Inorganic materials 0.000 claims description 5
- 235000019792 magnesium silicate Nutrition 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 56
- 239000012945 sealing adhesive Substances 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810672046.6A CN108878383B (zh) | 2018-06-26 | 2018-06-26 | 一种高性能ipm封装模块及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810672046.6A CN108878383B (zh) | 2018-06-26 | 2018-06-26 | 一种高性能ipm封装模块及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN108878383A CN108878383A (zh) | 2018-11-23 |
CN108878383B true CN108878383B (zh) | 2020-04-17 |
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CN201810672046.6A Active CN108878383B (zh) | 2018-06-26 | 2018-06-26 | 一种高性能ipm封装模块及其制备方法 |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103715106A (zh) * | 2012-09-29 | 2014-04-09 | 广东美的制冷设备有限公司 | 一种智能功率模块的制造方法及智能功率模块 |
CN108091619A (zh) * | 2017-12-08 | 2018-05-29 | 广东美的制冷设备有限公司 | 智能功率模块及其制造方法、空调器 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4614584B2 (ja) * | 2001-06-28 | 2011-01-19 | 三洋電機株式会社 | 混成集積回路装置およびその製造方法 |
CN104701305A (zh) * | 2013-12-06 | 2015-06-10 | 上海北京大学微电子研究院 | 一种双晶片覆晶结构 |
US9496238B2 (en) * | 2015-02-13 | 2016-11-15 | Advanced Semiconductor Engineering, Inc. | Sloped bonding structure for semiconductor package |
CN207116412U (zh) * | 2017-08-23 | 2018-03-16 | 恒劲科技股份有限公司 | 电子封装件及其封装基板 |
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2018
- 2018-06-26 CN CN201810672046.6A patent/CN108878383B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103715106A (zh) * | 2012-09-29 | 2014-04-09 | 广东美的制冷设备有限公司 | 一种智能功率模块的制造方法及智能功率模块 |
CN108091619A (zh) * | 2017-12-08 | 2018-05-29 | 广东美的制冷设备有限公司 | 智能功率模块及其制造方法、空调器 |
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Effective date of registration: 20200325 Address after: 325600 No.155, Hongdan Road, Hongqiao Town, Yueqing City, Wenzhou City, Zhejiang Province Applicant after: Yueqing Haichuang Intelligent Technology Co., Ltd Address before: Room 305, 168 Yuanhe Yangchenghu Middle Road, Xiangcheng District, Suzhou City, Jiangsu Province Applicant before: Zhang Jun |
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TR01 | Transfer of patent right |
Effective date of registration: 20210720 Address after: 518000 3616a10, building a, Xinghe century, No. 3069, CaiTian Road, Gangxia community, Futian street, Futian District, Shenzhen, Guangdong Province Patentee after: Shenzhen Fukang Technical Service Center Address before: 325600 155 Hongdan Road, Hongqiao Town, Yueqing City, Wenzhou City, Zhejiang Province Patentee before: Yueqing Haichuang Intelligent Technology Co.,Ltd. |
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Effective date of registration: 20220110 Address after: 225603 Dongting Lake Road, Gaoyou Economic Development Zone, Yangzhou, Jiangsu Patentee after: YANGZHOU GANGXIN PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 518000 3616a10, building a, Xinghe century, No. 3069, CaiTian Road, Gangxia community, Futian street, Futian District, Shenzhen, Guangdong Province Patentee before: Shenzhen Fukang Technical Service Center |
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