CN108878302B - Ball grid array packaging structure and packaging method thereof - Google Patents
Ball grid array packaging structure and packaging method thereof Download PDFInfo
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- CN108878302B CN108878302B CN201810737627.3A CN201810737627A CN108878302B CN 108878302 B CN108878302 B CN 108878302B CN 201810737627 A CN201810737627 A CN 201810737627A CN 108878302 B CN108878302 B CN 108878302B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910000679 solder Inorganic materials 0.000 claims abstract description 416
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 229920005989 resin Polymers 0.000 claims description 93
- 239000011347 resin Substances 0.000 claims description 93
- 239000002184 metal Substances 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 53
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 52
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 10
- 239000004033 plastic Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 41
- 230000008602 contraction Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004021 metal welding Methods 0.000 description 4
- MPDDTAJMJCESGV-CTUHWIOQSA-M (3r,5r)-7-[2-(4-fluorophenyl)-5-[methyl-[(1r)-1-phenylethyl]carbamoyl]-4-propan-2-ylpyrazol-3-yl]-3,5-dihydroxyheptanoate Chemical compound C1([C@@H](C)N(C)C(=O)C2=NN(C(CC[C@@H](O)C[C@@H](O)CC([O-])=O)=C2C(C)C)C=2C=CC(F)=CC=2)=CC=CC=C1 MPDDTAJMJCESGV-CTUHWIOQSA-M 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention provides a packaging structure of a ball grid array and a packaging method thereof, wherein the packaging method comprises the following steps: providing a substrate, wherein one side surface of the substrate at least has a first area, a second area and a third area for arranging solder balls; and welding at least one first welding ball on the first area, welding at least one second welding ball on the second area, and welding at least one third welding ball on the third area, wherein at least one parameter of the first welding ball, the second welding ball and the second welding ball is different, and the parameter comprises heat conduction performance, thermal expansion coefficient and size. The invention relates to a ball grid array packaging structure and a packaging method thereof.A plurality of welding areas are defined below a substrate, and at least one welding ball with different parameters is welded in each welding area, wherein the parameters comprise heat conduction performance and size; therefore, the solder balls with different parameters can be welded according to the specific requirements of each welding area, and the overall performance of the packaging structure of the ball grid array is further improved.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a packaging structure of a ball grid array and a packaging method thereof.
Background
Ball Grid Array (BGA) packaging is a surface mount technology used in integrated circuits to permanently mount devices such as microprocessors. BGA packages can provide more pins than other packages such as Dual in-line packages or Quad Flat packages (Quad Flat packages), the bottom surface of the entire device can be fully used as pins rather than only the periphery, and the device can have a shorter average wire length than the type of Package defined by the periphery, so as to have better high-speed performance; BGA packages are formed by making an array on the bottom of a package substrate with solder balls as I/O terminals of the circuit interconnected to a Printed Circuit Board (PCB).
The solder balls have the functions of electrical connection and heat conduction. The arrangement of the solder balls can be classified into peripheral row, staggered type and full array type BGA. In the conventional BGA package, the solder balls on the back surface of the substrate are generally the same solder balls. The larger the solder ball is, the stronger the heat conduction capability is, but meanwhile, the larger the solder ball is, the larger the occupied substrate area is, and the high-density high-pin output which is not in favor of BGA is generated; moreover, because the difference between the thermal expansion coefficients of the substrate, the printed circuit board and the metal solder balls is relatively large, under the conditions of thermal expansion and cold contraction, the larger the solder balls after the substrate is packaged is, which means that the larger the metal area between the back surface of the substrate and the printed circuit board is, the larger the generated shear stress is, and the solder joints of the solder balls are prone to fracture. If smaller solder balls are adopted, on one hand, heat conduction of the functional chip in the packaging body is not facilitated, and on the other hand, the solder balls at four corners of the packaging body are easy to break in falling collision.
Disclosure of Invention
The invention aims to provide a packaging structure of a ball grid array and a packaging method thereof.
In order to achieve one of the above objects, the present invention provides a method for packaging a ball grid array, the method comprising: providing a substrate, wherein one side surface of the substrate at least has a first area, a second area and a third area for arranging solder balls;
and welding at least one first welding ball on the first area, welding at least one second welding ball on the second area, and welding at least one third welding ball on the third area, wherein at least one parameter of the first welding ball, the second welding ball and the third welding ball is different, and the parameter comprises heat conduction performance, thermal expansion coefficient and size.
As a further improvement of an embodiment of the present invention, the first area corresponds to a functional chip, and the third area corresponds to at least one corner of the substrate;
the first solder balls have a first thermal conductivity and a first size, the second solder balls have a second thermal conductivity and a second size, the third solder balls have a third size, the first thermal conductivity is greater than the second thermal conductivity, and the first size is equal to the second size and smaller than the third size.
As a further improvement of an embodiment of the present invention, the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball and a full-tin solder ball, and the third solder ball is a resin solder ball;
the metal solder ball includes: the core comprises a first inner core and a first outer core wrapping the first inner core, wherein the first inner core is made of a metal material with heat conductivity and melting point higher than those of tin, and the first outer core is made of a tin material; the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball; the thermal expansion coefficient of the metal solder ball is higher than that of the all-tin solder ball.
As a further improvement of an embodiment of the present invention, the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball and a full-tin solder ball, and the third solder ball is a full-tin solder ball;
the metal solder ball includes: the core comprises a first inner core and a first outer core wrapping the first inner core, wherein the first inner core is made of a metal material with heat conductivity and melting point higher than those of tin, and the first outer core is made of a tin material; the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball; the thermal expansion coefficient of the metal solder ball is higher than that of the all-tin solder ball.
As a further improvement of an embodiment of the present invention, the first solder balls are all-tin solder balls, the second solder balls are resin solder balls, and the third solder balls are at least one of resin solder balls or all-tin solder balls;
the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the coefficient of thermal expansion of the all-tin solder ball is higher than that of the resin solder ball.
In order to achieve the above object, according to another embodiment of the present invention, there is provided a ball grid array package structure, including: the substrate, the component arranged on the upper surface of the substrate, the plastic package material used for packaging the component and the solder ball implanted below the substrate;
the solder balls comprise a first solder ball, a second solder ball and a third solder ball with at least one parameter different; the parameters include thermal conductivity, coefficient of thermal expansion and size;
the lower surface of the substrate is at least provided with a first area for implanting a first solder ball, a second area for implanting a second solder ball and a third area for implanting a third solder ball.
As a further improvement of an embodiment of the present invention, the component includes a functional chip, a first area is disposed below the substrate corresponding to the functional chip, and a third area is disposed corresponding to at least one corner of the substrate, the first solder balls have a first thermal conductivity and a first size, the second solder balls have a second thermal conductivity and a second size, the third solder balls have a third size, the first thermal conductivity is greater than the second thermal conductivity, and the first size is equal to the second size and smaller than the third size.
As a further improvement of an embodiment of the present invention, the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball and a full-tin solder ball, and the third solder ball is a resin solder ball;
the metal solder ball includes: the core comprises a first inner core and a first outer core wrapping the first inner core, wherein the first inner core is made of a metal material with heat conductivity and melting point higher than those of tin, and the first outer core is made of a tin material; the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball; the thermal expansion coefficient of the metal solder ball is higher than that of the all-tin solder ball.
As a further improvement of an embodiment of the present invention, the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball and a full-tin solder ball, and the third solder ball is a full-tin solder ball;
the metal solder ball includes: the core comprises a first inner core and a first outer core wrapping the first inner core, wherein the first inner core is made of a metal material with heat conductivity and melting point higher than those of tin, and the first outer core is made of a tin material; the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball; the thermal expansion coefficient of the metal solder ball is higher than that of the all-tin solder ball.
As a further improvement of an embodiment of the present invention, the first solder balls are all-tin solder balls, the second solder balls are resin solder balls, and the third solder balls are at least one of resin solder balls or all-tin solder balls;
the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the coefficient of thermal expansion of the all-tin solder ball is higher than that of the resin solder ball.
The invention has the beneficial effects that: the invention relates to a ball grid array packaging structure and a packaging method thereof.A plurality of welding areas are defined below a substrate, and at least one welding ball with different parameters is welded in each welding area, wherein the parameters comprise heat conduction performance, thermal expansion coefficient and size; therefore, the solder balls with different parameters can be welded according to the specific requirements of each welding area, and the overall performance of the packaging structure of the ball grid array is further improved.
Drawings
Fig. 1 is a schematic flow chart of a ball grid array packaging method according to a first embodiment of the present invention;
FIG. 2 is a flow chart illustrating a ball grid array packaging method according to a second embodiment of the present invention;
FIG. 3 is a schematic top view of a ball grid array package in accordance with one embodiment of the present invention;
fig. 4A is a schematic side sectional view of a ball grid array package structure according to a first embodiment of the present invention;
fig. 4B is a schematic bottom view of a ball grid array package in accordance with a first embodiment of the present invention;
fig. 5A is a schematic side sectional view of a ball grid array package structure according to a first embodiment of the present invention;
fig. 5B is a schematic bottom view of a ball grid array package in accordance with a first embodiment of the present invention;
fig. 6A is a schematic side sectional view of a ball grid array package structure according to a second embodiment of the present invention;
fig. 6B is a schematic bottom view of a ball grid array package in accordance with a second embodiment of the present invention;
fig. 7A is a schematic side sectional view of a ball grid array package structure according to a third embodiment of the present invention;
fig. 7B is a schematic bottom view of a ball grid array package in accordance with a third embodiment of the present invention;
fig. 8A is a schematic side sectional view of a ball grid array package structure according to a fourth embodiment of the present invention;
fig. 8B is a schematic bottom view of a ball grid array package in accordance with a fourth embodiment of the present invention;
fig. 9A is a schematic side sectional view of a ball grid array package structure according to a fifth embodiment of the present invention;
fig. 9B is a schematic bottom view of a ball grid array package in accordance with a fifth embodiment of the present invention;
fig. 10A is a schematic side sectional view of a ball grid array package structure according to a sixth embodiment of the present invention;
fig. 10B is a schematic bottom view of a ball grid array package in accordance with a sixth embodiment of the present invention;
fig. 11A is a schematic side sectional view of a ball grid array package structure according to a seventh embodiment of the present invention;
fig. 11B is a schematic bottom view of a ball grid array package in accordance with a seventh embodiment of the present invention;
fig. 12A is a schematic side sectional view of a ball grid array package structure according to an eighth embodiment of the present invention;
fig. 12B is a schematic bottom view of a ball grid array package in accordance with an eighth embodiment of the present invention.
Detailed Description
The invention will be described in detail hereinafter with reference to an embodiment shown in the drawings. These embodiments are not intended to limit the present invention, and structural and functional changes made by those skilled in the art according to these embodiments are included in the scope of the present invention.
Referring to fig. 1, a first embodiment of the present invention provides a ball grid array packaging method, including: s1, providing a substrate, wherein one side surface of the substrate at least has a first area and a second area for arranging solder balls.
In the specific embodiment of the invention, before the solder balls are implanted, at least two welding areas are defined below the substrate according to the functions of the solder balls; the welding area includes: the solder balls are used for the first area of electric transmission and heat conduction, and the second area except the first area is arranged below the substrate. .
Ball grid array packages generally include: the substrate, the component arranged above the substrate, the plastic package material for packaging the component and the solder ball implanted below the substrate; according to the specific application environment of the packaging structure of the ball grid array, the components arranged above the substrate mainly comprise: the functional chip is an active electronic element, needs an energy source to realize a specific function, and is generally used for signal amplification, conversion and the like; the passive device is an electronic element which can display the characteristics of the passive device without an external power supply, and mainly comprises resistor type, inductor type and capacitor type devices, and the common characteristic of the passive device is that the passive device can work when a signal exists without the need of adding a power supply in a circuit, for example: resistors, capacitors, inductors, converters, faders, matching networks, resonators, filters, mixers, switches, and the like.
Correspondingly, the functions of the solder balls implanted below the substrate corresponding to the components are different according to different types of the components implanted above the substrate. Specifically, the solder balls implanted in the corresponding functional chip region below the substrate are mainly used for electrical transmission and heat conduction; the solder balls implanted under the substrate corresponding to the passive device region are mainly used for electrical transmission.
Further, the method further comprises: s2, dividing the soldering region into two parts under the substrate according to the function of the solder ball, including: the solder balls are used for the first area of electric transmission and heat conduction, and the second area except the first area is arranged below the substrate. In a specific implementation that can be achieved according to the preferred embodiment, at least two soldering regions can be defined below the substrate according to the type of the package component above the corresponding substrate; namely, the area below the substrate corresponding to the functional chip is a first area, and the area below the substrate corresponding to the passive device and other areas needing solder balls are divided into a second area.
The solder balls mentioned in the present invention have a plurality of types, each type of solder ball having different parameters, which mainly include: thermal conductivity, coefficient of thermal expansion and dimensions, which in other embodiments of the invention may also relate to electrical conductivity. Preferably, in the specific embodiment of the present invention, the heat conduction performance is improved or reduced by changing the content of the metal with high electrical and thermal conductivity in the solder ball and the content of the insulating substance in the solder ball; furthermore, the invention divides the parameters into three categories according to the difference of the parameters, which are respectively a metal solder ball, a resin solder ball and an all-tin solder ball; the metal solder ball includes: the core comprises a first inner core and a first outer core wrapping the first inner core, wherein the first inner core is made of a metal material with heat conductivity and melting point higher than those of tin, and the first outer core is made of a tin material; the metal constituting the first core is, for example: copper; the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the resin constituting the second core is a high molecular compound such as: phenolic resins, polyester resins, and the like; the all-tin solder ball is a traditional tin solder ball, and the material of the all-tin solder ball is tin. For the metal welding balls, the resin welding balls and the all-tin welding balls with the same size, the heat conduction performance of the metal welding balls is best, the heat conduction performance of the resin welding balls is lowest, the thermal expansion coefficient of the metal welding balls is largest, and the thermal expansion coefficient of the resin welding balls is smallest, namely the thermal expansion coefficient of the all-tin welding balls is higher than that of the resin welding balls and lower than that of the metal welding balls, so that the generated shear stress of the resin welding balls is smallest under the conditions of thermal expansion and cold contraction.
In a preferred embodiment of the present invention, the first area corresponds to a functional chip, at least one first solder ball is bonded to the first area, and at least one second solder ball is bonded to the second area, wherein at least one parameter of the first solder ball is different from at least one parameter of the second solder ball, and the parameters include thermal conductivity and size; the first solder balls have a first thermal conductivity, the second solder balls have a second thermal conductivity, and the first thermal conductivity is greater than the second thermal conductivity.
Further, in an embodiment of the present invention, the first solder balls have a first size, the second solder balls have a second size, and the first size is equal to the second size. Specifically, the first solder balls are metal solder balls, the second solder balls are at least one of resin solder balls or full-tin solder balls, or the first solder balls are full-tin solder balls, and the second solder balls are resin solder balls; of course, in other embodiments of the present invention, the first solder ball is a metal solder ball, the second solder ball may also be a resin solder ball and an all-tin solder ball, and a thermal expansion coefficient of the all-tin solder ball is higher than a thermal expansion coefficient of the resin solder ball and lower than a thermal expansion coefficient of the metal solder ball, which is not further described herein.
Further, in a preferred embodiment of the present invention, in order to prevent the solder ball at the corner region below the substrate from breaking its solder joint under the influence of external force, a second embodiment of the present invention provides a method for packaging a ball grid array, wherein, on the basis of the method for packaging a ball grid array provided by the first embodiment, a side surface of the substrate further has a third region for disposing the solder ball; and at least one third solder ball is welded in the third area, wherein at least one parameter of the third solder ball is different from that of the second solder ball, and the parameter comprises heat conduction performance, thermal expansion coefficient and size.
In an embodiment of the present invention, the third region is present independently of the first region and the second region, or the third region is a part of the second region.
In a second embodiment of the present invention, as shown in fig. 2, the method for packaging a ball grid array specifically includes: m1, providing a substrate, wherein one side surface of the substrate at least has a first area, a second area and a third area for arranging solder balls; m2, at least one first solder ball is soldered to the first region, at least one second solder ball is soldered to the second region, and at least one third solder ball is soldered to the third region, wherein at least one parameter of the first solder ball, the second solder ball, and the third solder ball is different, and the parameter includes thermal conductivity, thermal expansion coefficient, and size.
Preferably, the first region corresponds to a functional chip, and the third region corresponds to at least one corner of the substrate; the first solder balls have a first thermal conductivity and a first size, the second solder balls have a second thermal conductivity and a second size, the third solder balls have a third thermal conductivity and a third size, the first thermal conductivity is greater than the second thermal conductivity, and the first size is equal to the second size and smaller than the third size.
Correspondingly, the solder balls in the third area are large-size solder balls, so that the contact area between the solder balls and the substrate and between the solder balls and the printed circuit board is enhanced, the welding bonding strength is enhanced, and the influence of external force is avoided, such as: the welding point is broken due to falling and collision.
Specifically, in an implementation manner of the present invention, the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball and a full-tin solder ball, and the third solder ball is a resin solder ball; or the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball or a full tin solder ball, and the third solder ball is a full tin solder ball; or the first solder ball is an all-tin solder ball, the second solder ball is a resin solder ball, and the third solder ball is at least one of a resin solder ball or an all-tin solder ball; the thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball and lower than that of the metal solder ball.
With reference to fig. 3 to 12B, for convenience of understanding, a specific description is given by taking the 9-ball grid array package structure packaged by the ball grid array packaging method as an example, in this example, all implementation manners are not exhaustive, but other package structures may be derived by combining the above description and the following specific example description, and further details are not described herein.
Referring to fig. 3, fig. 4A, fig. 4B, fig. 5A, fig. 5B, and fig. 6A, fig. 6B, the ball grid array package structure according to the first, second, and third embodiments of the present invention is shown; the packaging structure of the ball grid array comprises: the chip package comprises a substrate 10, a component 30 arranged above the substrate 10, a molding compound 50 for packaging the component, and a solder ball 70 implanted below the substrate 10; the solder balls 70 comprise at least a first solder ball and a second solder ball with different parameters, wherein the parameters comprise heat conduction performance, thermal expansion coefficient and size; the lower surface of the substrate 10 at least has a first region 91 for implanting a first solder ball and a second region 93 for implanting a second solder ball; the component 30 includes: a functional chip 31 and a passive device 33; a first region 91 is arranged below the substrate corresponding to the functional chip 31, the first solder balls have a first thermal conductivity and a first size, the second solder balls have a second thermal conductivity and a second size, and the first thermal conductivity is greater than the second thermal conductivity; the first size is equal to the second size.
As shown in fig. 4A and 4B, in the package structure provided in the first embodiment of the present invention, the first solder ball is a metal solder ball 71, and the second solder ball is a resin solder ball 73. The metal solder ball 71 includes: the core comprises a first inner core 711 and a first outer core 713 covering the first inner core 711, wherein the first inner core 711 is made of a metal material with heat conduction performance and melting point higher than those of tin, and the first outer core 713 is made of tin; the metals constituting the first core 711 include, for example: copper; the resin solder ball 73 includes: a second inner core 731 and a second outer core 733 covering the second inner core 731, wherein the second inner core 731 is made of resin material, and the second outer core 733 is made of tin material; the resin constituting the second core 733 is a polymer compound, for example: phenolic resins, polyester resins, and the like; the coefficient of thermal expansion of the resin solder balls 73 is lower than that of the metal solder balls 71.
As shown in fig. 5A and 5B, in the package structure provided in the first embodiment of the present invention, the first solder ball is a metal solder ball 71, and the second solder ball is an all-tin solder ball 75; the all-tin solder ball 75 is a conventional tin solder ball made of tin; the thermal expansion coefficient of the all-tin solder ball 75 is lower than that of the metal solder ball 71.
As shown in fig. 6A and 6B, in the package structure according to the third embodiment of the present invention, the first solder ball is an all-tin solder ball 75, and the second solder ball is a resin solder ball 73; the coefficient of thermal expansion of the resin solder balls 73 is lower than that of the all-tin solder balls 75.
In the ball grid array package structure provided in the first, second, and third embodiments of the present invention, under the condition that the size of the solder ball is not changed, the solder ball with higher thermal conductivity is implanted in the first region to improve the thermal conductivity of the first region, and the solder ball with lower thermal expansion coefficient is implanted in the second region to reduce the shear stress generated under the conditions of thermal expansion and cold contraction, thereby avoiding the fracture of the solder ball joint caused by the shear stress.
Referring to fig. 3, fig. 7A, fig. 7B, fig. 8A, fig. 8B, fig. 9A, fig. 9B, fig. 10A, fig. 10B, fig. 11A, fig. 11B, and fig. 12A, fig. 12B, which are views illustrating a ball grid array package structure according to a fourth, fifth, sixth, seventh, eighth, ninth, tenth, eleventh, and twelfth embodiment of the present invention; the difference between the package structure provided by the 6 ways and the three package structures is that the lower surface of the substrate further has a third region 95 for disposing solder balls; the solder ball also comprises a third solder ball, wherein at least one parameter of the third solder ball is different from that of the second solder ball, and the parameters comprise heat conduction performance, thermal expansion coefficient and size. In this specific embodiment, the ball grid array package structure includes: the chip package comprises a substrate 10, a component 30 arranged above the substrate 10, a molding compound 50 for packaging the component, and a solder ball 70 implanted below the substrate 10; the solder balls 70 include at least a first solder ball, a second solder ball and a third solder ball with different parameters, wherein the parameters include thermal conductivity, thermal expansion coefficient and size; the lower surface of the substrate 10 at least has a first region 91 for implanting a first solder ball, a second region 93 for implanting a second solder ball, and a third region 95 for implanting a third solder ball; the component 30 includes: a functional chip 31 and a passive device 33; a first region 91 corresponding to the lower portion of the substrate 10 of the functional chip 31, a third region 95 corresponding to at least one corner of the lower portion of the substrate 10, and a second region 93 corresponding to the remaining lower portion of the substrate 10; the first solder balls have a first heat conduction performance and a first size, the second solder balls have a second heat conduction performance and a second size, the third solder balls have a third heat conduction performance and a second size, and the first heat conduction performance is greater than the second heat conduction performance; the first size is equal to the second size and smaller than the third size.
As shown in fig. 7A and 7B, in the package structure according to the fourth embodiment of the present invention, the first solder ball is a metal solder ball 71, the second solder ball and the third solder ball are both resin solder balls 73, and a thermal expansion coefficient of the resin solder balls 73 is lower than a thermal expansion coefficient of the metal solder balls 71.
As shown in fig. 8A and 8B, in the package structure according to the fifth embodiment of the present invention, the first solder ball is a metal solder ball 71, the second solder ball and the third solder ball are all-tin solder balls 75, and a thermal expansion coefficient of the all-tin solder balls 75 is lower than a thermal expansion coefficient of the metal solder balls 71.
As shown in fig. 9A and 9B, in the package structure according to the sixth embodiment of the present invention, the first solder ball is a metal solder ball 71, the second solder ball is a resin solder ball 73, the third solder ball is an all-tin solder ball 75, and a thermal expansion coefficient of the all-tin solder 75 is higher than a thermal expansion coefficient of the resin solder ball 73 and lower than a thermal expansion coefficient of the metal solder ball 71.
As shown in fig. 10A and 10B, in the package structure according to the seventh embodiment of the present invention, the first solder ball is a metal solder ball 71, the second solder ball is an all-tin solder ball 75, the third solder ball is a resin solder ball 73, and a thermal expansion coefficient of the all-tin solder ball 75 is higher than a thermal expansion coefficient of the resin solder ball 73 and lower than a thermal expansion coefficient of the metal solder ball 71.
In the fourth, fifth, sixth and seventh embodiments, the first area corresponding to the functional chip and the third area corresponding to the corner are defined below the substrate, and the metal solder balls are implanted into the first area, so as to increase the content of the high-conductivity and high-heat-conductivity metal in the solder balls to improve the heat conduction capability of the first area; the second area is implanted with solder balls with a thermal expansion coefficient lower than that of the metal solder balls so as to reduce the shear stress between the solder balls and the substrate under the conditions of thermal expansion and cold contraction and avoid the fracture of solder ball joints caused by the shear stress; and large-size solder balls are implanted into the third area, so that the contact area between the solder balls and the substrate and between the solder balls and the printed circuit board is enhanced, the welding bonding strength is enhanced, and the welding point fracture caused by external force influence is avoided.
As shown in fig. 11A and 11B, in the package structure according to the eighth embodiment of the present invention, the first solder ball is an all-tin solder ball 75, the second solder ball and the third solder ball are both resin solder balls 73, and a thermal expansion coefficient of the resin solder balls 73 is lower than a thermal expansion coefficient of the all-tin solder balls 75.
As shown in fig. 12A and 12B, in the package structure according to the ninth embodiment of the present invention, the first solder ball is an all-tin solder ball 75, the second solder ball is a resin solder ball 73, the third solder ball is an all-tin solder ball 75, and a thermal expansion coefficient of the all-tin solder ball 75 is higher than a thermal expansion coefficient of the resin solder ball 73.
In the ball grid array package structure according to the eighth and ninth embodiments of the present invention, 3 solder areas are defined below the substrate, and the solder areas sequentially include: the first area corresponding to the functional chip below the substrate, the third area corresponding to the corner and the second area excluding the first area and the third area below the substrate are implanted with large-size solder balls in the third area, so that the contact area between the solder balls and the substrate and between the solder balls and the printed circuit board are enhanced, the welding bonding strength is enhanced, and the welding point is prevented from being broken under the influence of external force; the second area is implanted with the resin solder balls to reduce the metal amount of the solder balls and reduce the thermal expansion coefficient of the solder balls, so that the shearing stress generated under the conditions of thermal expansion and cold contraction can be reduced, and the fracture of the solder ball joints caused by the shearing stress is avoided.
In summary, in the ball grid array package structure and the method of the present invention, a plurality of solder areas are defined under the substrate according to the functions of the solder balls or the types of the components, and different types of solder balls can be implanted according to the requirements of each solder area; thereby improving the overall performance of the ball grid array package structure.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (8)
1. A packaging method of a ball grid array is characterized in that the packaging method comprises the following steps:
providing a substrate, wherein one side surface of the substrate at least has a first area, a second area and a third area for arranging solder balls; the first area corresponds to a functional chip, the third area corresponds to at least one corner of a substrate, and the second area corresponds to the rest area of the surface of one side of the substrate;
at least one first solder ball is welded on the first area, at least one second solder ball is welded on the second area, and at least one third solder ball is welded on the third area;
the first solder balls have a first thermal conductivity and a first size, the second solder balls have a second thermal conductivity and a second size, the third solder balls have a third size, the first thermal conductivity is greater than the second thermal conductivity, and the first size is equal to the second size and smaller than the third size.
2. The method of claim 1, wherein the first solder balls are metal solder balls, the second solder balls are at least one of resin solder balls or full-tin solder balls, and the third solder balls are resin solder balls;
the metal solder ball includes: the core comprises a first inner core and a first outer core wrapping the first inner core, wherein the first inner core is made of a metal material with heat conductivity and melting point higher than those of tin, and the first outer core is made of a tin material; the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball; the thermal expansion coefficient of the metal solder ball is higher than that of the all-tin solder ball.
3. The method of claim 1, wherein the first solder balls are metal solder balls, the second solder balls are at least one of resin solder balls or all-tin solder balls, and the third solder balls are all-tin solder balls;
the metal solder ball includes: the core comprises a first inner core and a first outer core wrapping the first inner core, wherein the first inner core is made of a metal material with heat conductivity and melting point higher than those of tin, and the first outer core is made of a tin material; the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball; the thermal expansion coefficient of the metal solder ball is higher than that of the all-tin solder ball.
4. The method of claim 1, wherein the first solder balls are all-tin solder balls, the second solder balls are resin solder balls, and the third solder balls are at least one of resin solder balls or all-tin solder balls;
the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the coefficient of thermal expansion of the all-tin solder ball is higher than that of the resin solder ball.
5. A ball grid array package, the package comprising: the substrate, the component arranged on the upper surface of the substrate, the plastic package material used for packaging the component and the solder ball implanted below the substrate;
the solder balls comprise a first solder ball, a second solder ball and a third solder ball; the first solder balls have a first thermal conductivity and a first size, the second solder balls have a second thermal conductivity and a second size, the third solder balls have a third size, the first thermal conductivity is greater than the second thermal conductivity, and the first size is equal to the second size and smaller than the third size;
the lower surface of the substrate is at least provided with a first area for implanting a first solder ball, a second area for implanting a second solder ball and a third area for implanting a third solder ball;
the component comprises a functional chip, a first area is arranged below the substrate corresponding to the functional chip, at least one corner corresponding to the substrate is a third area, and a remaining area corresponding to the lower surface of the substrate is a second area.
6. The BGA package structure of claim 5, wherein the first solder balls are metal solder balls, the second solder balls are at least one of resin solder balls or full-tin solder balls, and the third solder balls are resin solder balls;
the metal solder ball includes: the core comprises a first inner core and a first outer core wrapping the first inner core, wherein the first inner core is made of a metal material with heat conductivity and melting point higher than those of tin, and the first outer core is made of a tin material; the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball; the thermal expansion coefficient of the metal solder ball is higher than that of the all-tin solder ball.
7. The BGA package structure of claim 5, wherein the first solder balls are metal solder balls, the second solder balls are at least one of resin solder balls or full-tin solder balls, and the third solder balls are full-tin solder balls;
the metal solder ball includes: the core comprises a first inner core and a first outer core wrapping the first inner core, wherein the first inner core is made of a metal material with heat conductivity and melting point higher than those of tin, and the first outer core is made of a tin material; the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball; the thermal expansion coefficient of the metal solder ball is higher than that of the all-tin solder ball.
8. The BGA package structure of claim 5, wherein the first solder balls are all-tin solder balls, the second solder balls are resin solder balls, and the third solder balls are at least one of resin solder balls or all-tin solder balls;
the resin solder ball includes: the second inner core is made of resin materials, and the second outer core is made of tin materials; the material of the all-tin solder ball is tin; the coefficient of thermal expansion of the all-tin solder ball is higher than that of the resin solder ball.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810737627.3A CN108878302B (en) | 2018-07-06 | 2018-07-06 | Ball grid array packaging structure and packaging method thereof |
| PCT/CN2019/078740 WO2020007067A1 (en) | 2018-07-06 | 2019-03-19 | Packaging structure of ball grid array of packaging method thereof |
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| CN201810737627.3A CN108878302B (en) | 2018-07-06 | 2018-07-06 | Ball grid array packaging structure and packaging method thereof |
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| CN108878302B true CN108878302B (en) | 2020-04-28 |
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| CN108878302B (en) * | 2018-07-06 | 2020-04-28 | 江苏长电科技股份有限公司 | Ball grid array packaging structure and packaging method thereof |
| US20220406695A1 (en) * | 2021-06-22 | 2022-12-22 | Western Digital Technologies, Inc. | Semiconductor device package having a ball grid array with multiple solder ball materials |
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| US6350669B1 (en) * | 2000-10-30 | 2002-02-26 | Siliconware Precision Industries Co., Ltd. | Method of bonding ball grid array package to circuit board without causing package collapse |
| CN103367302A (en) * | 2012-04-09 | 2013-10-23 | 横河电机株式会社 | Substrate device |
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| JP2000100851A (en) * | 1998-09-25 | 2000-04-07 | Sony Corp | Semiconductor substrate and manufacture thereof and structure and method for mounting semiconductor parts |
| JP3846611B2 (en) * | 1998-09-25 | 2006-11-15 | ソニー株式会社 | Mounting semiconductor component, mounting structure and mounting method |
| US8686560B2 (en) * | 2010-04-07 | 2014-04-01 | Maxim Integrated Products, Inc. | Wafer-level chip-scale package device having bump assemblies configured to mitigate failures due to stress |
| CN102569234A (en) * | 2010-12-21 | 2012-07-11 | 中芯国际集成电路制造(北京)有限公司 | Ball grid array encapsulating structure and encapsulation method |
| KR102050476B1 (en) * | 2012-09-28 | 2019-11-29 | 삼성전자주식회사 | Semiconductor package apparatus |
| CN103219310B (en) * | 2013-03-18 | 2016-07-13 | 三星半导体(中国)研究开发有限公司 | Mixing soldered ball layout and forming method thereof |
| CN108878302B (en) * | 2018-07-06 | 2020-04-28 | 江苏长电科技股份有限公司 | Ball grid array packaging structure and packaging method thereof |
| CN108899283B (en) * | 2018-07-06 | 2021-05-07 | 江苏长电科技股份有限公司 | Ball grid array packaging structure and packaging method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6350669B1 (en) * | 2000-10-30 | 2002-02-26 | Siliconware Precision Industries Co., Ltd. | Method of bonding ball grid array package to circuit board without causing package collapse |
| CN103367302A (en) * | 2012-04-09 | 2013-10-23 | 横河电机株式会社 | Substrate device |
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| WO2020007067A1 (en) | 2020-01-09 |
| CN108878302A (en) | 2018-11-23 |
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