CN108878245B - 闸阀装置和基板处理系统 - Google Patents

闸阀装置和基板处理系统 Download PDF

Info

Publication number
CN108878245B
CN108878245B CN201810442611.XA CN201810442611A CN108878245B CN 108878245 B CN108878245 B CN 108878245B CN 201810442611 A CN201810442611 A CN 201810442611A CN 108878245 B CN108878245 B CN 108878245B
Authority
CN
China
Prior art keywords
carrying
out port
gate valve
upper portion
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810442611.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN108878245A (zh
Inventor
大森贵史
锅山裕树
三枝直也
伊藤毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN108878245A publication Critical patent/CN108878245A/zh
Application granted granted Critical
Publication of CN108878245B publication Critical patent/CN108878245B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32513Sealing means, e.g. sealing between different parts of the vessel
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K3/00Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
    • F16K3/30Details
    • F16K3/314Forms or constructions of slides; Attachment of the slide to the spindle
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K27/00Construction of housing; Use of materials therefor
    • F16K27/04Construction of housing; Use of materials therefor of sliding valves
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
    • F16K51/00Other details not peculiar to particular types of valves or cut-off apparatus
    • F16K51/02Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32477Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Valve Housings (AREA)
  • Details Of Valves (AREA)
  • Plasma Technology (AREA)
CN201810442611.XA 2017-05-11 2018-05-10 闸阀装置和基板处理系统 Active CN108878245B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017094612A JP6899697B2 (ja) 2017-05-11 2017-05-11 ゲートバルブ装置及び基板処理システム
JP2017-094612 2017-05-11

Publications (2)

Publication Number Publication Date
CN108878245A CN108878245A (zh) 2018-11-23
CN108878245B true CN108878245B (zh) 2020-06-09

Family

ID=64333639

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810442611.XA Active CN108878245B (zh) 2017-05-11 2018-05-10 闸阀装置和基板处理系统

Country Status (4)

Country Link
JP (1) JP6899697B2 (ko)
KR (1) KR102100032B1 (ko)
CN (1) CN108878245B (ko)
TW (1) TWI759470B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111326385B (zh) * 2018-12-13 2022-06-24 江苏鲁汶仪器有限公司 一种真空腔室

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05196150A (ja) * 1991-09-30 1993-08-06 Tokyo Electron Yamanashi Kk ゲートバルブ
JP3043848U (ja) 1997-05-28 1997-12-02 株式会社プレオ つけまつ毛ケース
JP3652688B2 (ja) * 2003-02-27 2005-05-25 株式会社旭精機 開閉装置
US7214274B2 (en) 2003-03-17 2007-05-08 Tokyo Electron Limited Method and apparatus for thermally insulating adjacent temperature controlled processing chambers
US20060045668A1 (en) * 2004-07-19 2006-03-02 Grabowski Al W System for handling of wafers within a process tool
JP5044931B2 (ja) * 2005-10-31 2012-10-10 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
JP2007273620A (ja) * 2006-03-30 2007-10-18 Tokyo Electron Ltd 基板搬送装置及び基板処理装置
JP2009230870A (ja) 2008-03-19 2009-10-08 Hitachi Plant Technologies Ltd 有機elパネル組立てシステム
JP5389684B2 (ja) * 2010-01-29 2014-01-15 東京エレクトロン株式会社 ゲートバルブ及びそれを用いた基板処理装置
WO2012099064A1 (ja) * 2011-01-18 2012-07-26 株式会社日立国際電気 基板処理装置、基板支持具及び半導体装置の製造方法
JP6184832B2 (ja) * 2013-10-22 2017-08-23 東京エレクトロン株式会社 ゲートバルブ装置及びプラズマ処理装置
KR101604178B1 (ko) 2014-01-06 2016-03-16 가톨릭대학교 산학협력단 약물에 의한 간 손상의 예측 및 진단을 위한 바이오마커
JP6557523B2 (ja) * 2015-06-19 2019-08-07 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
CN108878245A (zh) 2018-11-23
TWI759470B (zh) 2022-04-01
JP6899697B2 (ja) 2021-07-07
KR102100032B1 (ko) 2020-04-10
JP2018189218A (ja) 2018-11-29
TW201901838A (zh) 2019-01-01
KR20180124730A (ko) 2018-11-21

Similar Documents

Publication Publication Date Title
KR101088289B1 (ko) 탑재대, 처리 장치 및 처리 시스템
KR102002216B1 (ko) 기판 승강 기구, 기판 탑재대 및 기판 처리 장치
JP5329072B2 (ja) 処理容器およびプラズマ処理装置
KR20190005750A (ko) 플라즈마 처리 장치
KR101760982B1 (ko) 기판 처리 방법 및 기판 처리 장치
KR101035249B1 (ko) 기판 탑재대 및 기판 처리 장치
JP5593418B2 (ja) 処理容器およびプラズマ処理装置
JP5141520B2 (ja) プラズマ処理装置
JP2019176031A (ja) プラズマ処理装置、及び被処理体の搬送方法
JP4695297B2 (ja) 薄膜形成装置及びロードロックチャンバー
KR102061969B1 (ko) 기판 처리 장치
KR20180006473A (ko) 게이트 밸브 장치 및 플라즈마 처리 장치
US20170372910A1 (en) Reinforcing structure, vacuum chamber and plasma processing apparatus
CN108878245B (zh) 闸阀装置和基板处理系统
KR20080104992A (ko) 기판 처리 시스템 및 기판 처리 장치
TW200929352A (en) Vacuum processing apparatus
JPWO2005055298A1 (ja) プラズマ処理装置及びマルチチャンバシステム
KR102203551B1 (ko) 기판 적재 구조체 및 플라스마 처리 장치
JP2023095644A (ja) プラズマ処理装置、およびプラズマ処理装置の製造方法
JP2003100722A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant