CN108848594A - A kind of LED drive circuit and LED multi-path luminescent system - Google Patents
A kind of LED drive circuit and LED multi-path luminescent system Download PDFInfo
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- CN108848594A CN108848594A CN201810757234.9A CN201810757234A CN108848594A CN 108848594 A CN108848594 A CN 108848594A CN 201810757234 A CN201810757234 A CN 201810757234A CN 108848594 A CN108848594 A CN 108848594A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/10—Controlling the intensity of the light
Abstract
The invention discloses a kind of LED drive circuit and LED multi-path luminescent systems, pass through the electric current of mirror image drive module mirror image N-type mirrored transistor to presupposition multiple, and the cathode for being transmitted to LED after driving current by the load end of mirror image drive module is obtained, it is shone with carrying out driving to LED.Since clamper module is by the voltage clamping of the load end of mirror image drive module to predeterminated voltage, so that the voltage of the voltage of the load end of mirror image drive module and anode supply end and LED itself conduction voltage drop is irrelevant, no matter how anode supply end and LED conduction voltage drop itself change, the feedback loop that can be made up of the first operational amplifier guarantees that voltage is identical as the voltage of the load end of mirror image drive module at the drain electrode of N-type mirrored transistor, so that N-type mirrored transistor is identical with the operating voltage condition of mirror image drive module, so that the driving current precision that the cathode that the load end of mirror image drive module is LED provides is high.
Description
Technical field
The present invention relates to LED (Light Emitting Diode, light emitting diode) actuation techniques fields, more specifically
It says, is related to a kind of LED drive circuit and LED multi-path luminescent system.
Background technique
LED has the characteristics that power consumption is few, the service life is long, pollution-free, rich in color, controllability is strong, is the primary of light industry
Revolution.With the development of LED, more and more LED products flood the market, such as the illuminating product and display device of LED application.
Wherein, the electronic drive circuit of LED is an indispensable component part in LED product.
LED is mainly set in the backing structure of display device when being applied in display device, in red LED, yellow led
In the colour mixture application of blue led, needs LED drive circuit that can provide the sufficiently high driving current of precision and be transmitted to LED, into
And red LED, yellow led and blue led can blend accurate color by accurately light emission luminance, it is still, existing
LED drive circuit by LED access power supply due to being influenced with the influence of LED conduction voltage drop itself, the driving current essence generated
It spends lower.
Summary of the invention
In view of this, the present invention provides a kind of LED drive circuits and LED multi-path luminescent system, LED drive circuit to pass through
The load end of mirror image drive module is the driving current precision anode that is high, and not connected by the anode of LED that the cathode of LED provides
The influence of power end and LED itself conduction voltage drop.
To achieve the above object, technical solution provided by the invention is as follows：
A kind of LED drive circuit, including：
First current source, N-type transmission transistor, N-type mirrored transistor, the first operational amplifier, mirror image drive module and
Clamper module；
The drain electrode of first current source output and the N-type transmission transistor and the grid of the N-type mirrored transistor
Extremely it is connected, the grid of the N-type transmission transistor is connected with the output end of first operational amplifier, the N-type transmission
The source electrode of transistor is connected with the negative phase end of the drain electrode of the N-type mirrored transistor and first operational amplifier, the N
The source electrode of type mirrored transistor connects ground terminal；
After electric current to presupposition multiple of the mirror image drive module for N-type mirrored transistor described in mirror image, by described
The load end of mirror image drive module is transmitted to the cathode of LED, the anode jointed anode power end of the LED, the mirror image driving
The load end of module is connected with the in-phase end of first operational amplifier；
And the clamper module is used for the voltage clamping of the load end of the mirror image drive module to predeterminated voltage,
And the predeterminated voltage is no more than the upper limit voltage at the drain electrode of the N-type mirrored transistor.
Optionally, the clamper module includes：
Second current source, second operational amplifier, N-type clamp transistor and current limiting element；
The output end of second current source and the in-phase end of the second operational amplifier and the current limiting element it is defeated
Enter end to be connected, the output end of the second operational amplifier and the grid of its negative phase end and the N-type clamp transistor are homogeneous
Even, the output end of the current limiting element connects ground terminal；
And the drain electrode of the N-type clamp transistor connects the cathode of the LED, the source electrode of the N-type clamp transistor
Connect the load end of the mirror image drive module.
Optionally, the current limiting element is diode, N-type transistor or resistance in diode connection type.
Optionally, first current source includes：
Current reference source and the first image source, benchmark of first image source for the output of current reference source described in mirror image
It is exported after electric current to certain multiple；
The output end of first image source is connected with the drain electrode of the N-type transmission transistor.
Optionally, second current source is the second image source, and second image source is for current reference described in mirror image
It is exported after the reference current to certain multiple of source output.
Optionally, the current reference source includes：First P-type transistor and the second P-type transistor, first image source
Including：3rd P transistor and the 4th P-type transistor；
The source electrode of the source electrode of first P-type transistor and the third P-type transistor is all connected with power supply end；
The grid of first P-type transistor is connected with the grid of the third P-type transistor, and first p-type is brilliant
The grid of body pipe is connected with the drain electrode of second P-type transistor；
The drain electrode of first P-type transistor is connected with the source electrode of second P-type transistor, second P-type crystal
The drain electrode of pipe connects ground terminal, and the grid of second P-type transistor is connected with the grid of the 4th P-type transistor；
And the drain electrode of the third P-type transistor is connected with the source electrode of the 4th P-type transistor, the 4th p-type
The drain electrode of transistor connects the drain electrode of the N-type transmission transistor.
Optionally, second image source includes：5th P-type transistor and the 6th P-type transistor；
The source electrode of 5th P-type transistor connects the power supply end, the grid connection of the 5th P-type transistor
The grid of first P-type transistor, the drain electrode of the 5th P-type transistor connect the source electrode of the 6th P-type transistor, institute
The drain electrode for stating the 6th P-type transistor is homogeneous with the in-phase end of the second operational amplifier and the input terminal of the current limiting element
Even, the grid of the 6th P-type transistor is connected with the grid of second P-type transistor.
Optionally, the anode supply end and the power supply end are mutually independent power end；
Alternatively, the anode supply end and the power supply end are same power end.
Optionally, the mirror image drive module includes：
Multiple mirror image submodules, each mirror image submodule include：
N-type drives transistor and connection control unit, and the drain electrode of the N-type driving transistor of all mirror image submodules is equal
It is connected to the load end of the mirror image drive module, the source electrode of the N-type driving transistor connects ground terminal, the N-type driving
The grid of transistor connects the connection control unit；
Wherein, it is brilliant that the grid that the connection control unit is used to control the N-type driving transistor connects the N-type mirror image
The grid or connection ground terminal of body pipe, and the grid of the N-type mirrored transistor is connected in the grid of N-type driving transistor
When, N-type driving transistor for N-type mirrored transistor described in mirror image electric current to certain multiple.
Correspondingly, the present invention provides a kind of LED multi-path luminescent systems, including：
LED multi-path and with the one-to-one driving circuit of every paths of LEDs, wherein the driving circuit is that above-mentioned LED drives
Circuit.
Compared to the prior art, technical solution provided by the invention has at least the following advantages：
The present invention provides a kind of LED drive circuit and LED multi-path luminescent systems, including：First current source, N-type transmission
Transistor, N-type mirrored transistor, the first operational amplifier, mirror image drive module and clamper module；The first current source output
The grid of drain electrode and the N-type mirrored transistor with the N-type transmission transistor is held to be connected, the N-type transmission transistor
Grid be connected with the output end of first operational amplifier, the source electrode of the N-type transmission transistor and the N-type mirror image are brilliant
The drain electrode of body pipe is connected with the negative phase end of first operational amplifier, and the source electrode of the N-type mirrored transistor connects ground connection
End；After electric current to presupposition multiple of the mirror image drive module for N-type mirrored transistor described in mirror image, driven by the mirror image
The load end of dynamic model block is transmitted to the cathode of LED, the anode jointed anode power end of the LED, the mirror image drive module
Load end is connected with the in-phase end of first operational amplifier；And the clamper module is used to the mirror image driving mould
The voltage clamping of the load end of block to predeterminated voltage, and the predeterminated voltage no more than the drain electrode of the N-type mirrored transistor at
Upper limit voltage.
As shown in the above, technical solution provided by the invention passes through mirror image drive module mirror image N-type mirrored transistor
Electric current to presupposition multiple, and the cathode of LED is transmitted to after obtaining driving current by the load end of mirror image drive module, with right
LED carries out driving and shines.Wherein, since clamper module is by the voltage clamping of the load end of mirror image drive module to predeterminated voltage,
And predeterminated voltage is not more than the upper limit voltage at the drain electrode of N-type mirrored transistor, so that the electricity of the load end of mirror image drive module
Press irrelevant with the voltage of anode supply end and LED itself conduction voltage drop, therefore, no matter anode supply end and LED itself are led
How logical pressure drop changes, and the feedback loop that can be made up of the first operational amplifier guarantees the drain electrode of N-type mirrored transistor
It is identical as the voltage of the load end of mirror image drive module to locate voltage, so that the work of N-type mirrored transistor and mirror image drive module
Make that voltage conditions are identical, and then guarantee the electric current of the more accurate mirror image N-type mirrored transistor of mirror image drive module, so that mirror image
The load end of drive module is that the driving current precision that the cathode of LED provides is high.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of LED drive circuit provided by the embodiments of the present application；
Fig. 2 is the structural schematic diagram of another LED drive circuit provided by the embodiments of the present application；
Fig. 3 is a kind of structural schematic diagram of LED multi-path luminescent system provided by the embodiments of the present application.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As described in background, it is mainly set in the backing structure of display device when LED is applied in display device,
In the colour mixture application of red LED, yellow led and blue led, need LED drive circuit that can provide the sufficiently high drive of precision
Streaming current is transmitted to LED, and then red LED, yellow led and blue led can be blended accurately by accurately light emission luminance
Color, still, existing LED drive circuit due to by LED access power supply is influenced with the influence of LED conduction voltage drop itself,
The driving current precision that it is generated is lower.
Based on this, the embodiment of the present application provides a kind of LED drive circuit and LED multi-path luminescent system, LED drive circuit
The driving current precision that the cathode that load end by mirror image drive module is LED provides is high, and do not connected by the anode of LED
The influence at anode supply end and LED conduction voltage drop itself.To achieve the above object, technical solution provided by the embodiments of the present application is such as
Under, specifically combine Fig. 1 to Fig. 3 that technical solution provided by the embodiments of the present application is described in detail.
Refering to what is shown in Fig. 1, being a kind of structural schematic diagram of LED drive circuit provided by the embodiments of the present application, wherein LED
Driving circuit includes：
First current source 100, N-type transmission transistor NL, N-type mirrored transistor N0, the first operational amplifier AMP1, mirror image
Drive module 200 and clamper module 300；
The drain electrode and the N-type mirrored transistor of first current source, 100 output end and the N-type transmission transistor NL
The grid of N0 is connected, and the grid of the N-type transmission transistor NL is connected with the output end of the first operational amplifier AMP1,
The drain electrode of the source electrode of the N-type transmission transistor NL and the N-type mirrored transistor N0 and the first operational amplifier AMP1
Negative phase end be connected, the source electrode of the N-type mirrored transistor N0 connects ground terminal Gnd；
After electric current to presupposition multiple of the mirror image drive module 200 for N-type mirrored transistor N0 described in mirror image, pass through
The load end B of the mirror image drive module 200 is transmitted to the cathode of LED, the anode jointed anode power end VDD_ of the LED
LED, the load end of the mirror image drive module 200 are connected with the in-phase end of the first operational amplifier AMP1；
And the clamper module 300 is used for the voltage clamping of the load end B of the mirror image drive module 200 to pre-
If voltage, and the upper limit voltage at drain electrode of the predeterminated voltage no more than the N-type mirrored transistor N0.
As shown in the above, technical solution provided by the embodiments of the present application passes through mirror image drive module mirror image N-type mirror image
The electric current of transistor is transmitted to the yin of LED to presupposition multiple by the load end of mirror image drive module after obtaining driving current
Pole is shone with carrying out driving to LED.Wherein, due to clamper module by the voltage clamping of the load end of mirror image drive module to pre-
If voltage, and predeterminated voltage is not more than the upper limit voltage at the drain electrode of N-type mirrored transistor, so that the load of mirror image drive module
The voltage of the voltage at end and anode supply end and LED itself conduction voltage drop is irrelevant, therefore, no matter anode supply end and LED
How conduction voltage drop itself changes, and the feedback loop that can be made up of the first operational amplifier guarantees N-type mirrored transistor
Drain electrode at voltage it is identical as the voltage of the load end of mirror image drive module so that N-type mirrored transistor and mirror image drive mould
The operating voltage condition of block is identical, and then guarantees the driving current essence that the cathode that the load end of mirror image drive module is LED provides
Degree is high.
Provided by the embodiments of the present application one specific LED drive circuit composed structure is described in detail below with reference to Fig. 2,
Refering to what is shown in Fig. 2, for the structural schematic diagram of another LED drive circuit provided by the embodiments of the present application, wherein the application is implemented
Example provide the clamper module 300 include：
Second current source 310, second operational amplifier AMP2, N-type clamp transistor NC and current limiting element 320；
The in-phase end and current limliting member of the output end of second current source 310 and the second operational amplifier AMP2
The input terminal of part 320 is connected, the output end and its negative phase end and the N-type clamper crystal of the second operational amplifier AMP2
The grid of pipe NC is connected, and the output end of the current limiting element 320 connects ground terminal Gnd；
And the drain electrode of the N-type clamp transistor NC connects the cathode of the LED, the N-type clamp transistor NC's
Source electrode connects the load end B of the mirror image drive module 200.
Clamper module 300 provided by the embodiments of the present application, the electric current of the second current source 310 flow through current limiting element 320 and obtain
One voltage VE then makes it export VF=VE by the buffer amplifier that second operational amplifier AMP2 is formed by connecting, into
And make the output of second operational amplifier AMP2 that there is stronger driving capability, to control N-type clamp transistor NC.
In one embodiment of the application, N-type clamp transistor NC provided by the present application has biggish size, lesser to make it have
Conduction impedance, to its size, design parameter the application is not particularly limited, and needs specifically to be designed according to practical application.
N-type clamp transistor NC is used to carry out clamper to the voltage of the load end B of mirror image drive module 200, that is, works as driving
When electric current flows through N-type clamp transistor NC, the gate source voltage difference VGS of N-type clamp transistor NC can be a determining value (such as
0.9V~1.5V, including endpoint value), that is, the voltage VB of the load end B of mirror image drive module 200 can be lower than mono- level pressure value of VF,
And the pressure value and driving current have positive relationship, are divided by the voltage VA variation at the drain electrode to N-type mirrored transistor N0
Analysis, with the voltage value of optimization design VE=VF based on the analysis results, can design the load end B for obtaining mirror image drive module 200
Voltage VB=VF-VGS be predeterminated voltage, and the predeterminated voltage no more than N-type mirrored transistor N0 drain electrode at voltage VA
Upper limit voltage.
Therefore, no matter how the voltage of anode supply end VDD_LED and LED conduction voltage drop itself changes, and mirror image drives mould
The voltage VB of the load end B of block 200 can be by N-type clamp transistor NC clamper in predeterminated voltage, and predeterminated voltage is not more than N-type
The upper limit voltage of voltage VA at the drain electrode of mirrored transistor N0, the equal energy of feedback loop of the first operational amplifier AMP1 connection
Enough guarantee that voltage VA is identical as the voltage VB of load end B of mirror image drive module 200 at the drain electrode of N-type mirrored transistor N0, with
So that N-type mirrored transistor N0 is identical with the operating voltage condition of mirror image drive module 200, and then guarantee mirror image drive module
200 load end B is that the driving current precision that the cathode of LED provides is high.
In one embodiment of the application, the current limiting element 320 provided by the present application can connect for diode, in diode
Connect the N-type transistor or resistance of mode.Preferably, current limiting element 320 provided by the embodiments of the present application is in diode connection side
The N-type transistor ND of formula, current limiting element 320 are belonged to the N-type of N-type mirrored transistor N0 and subsequent descriptions driving transistor NX
N-type transistor, therefore it can be drawn on position close to each other when drawing, so these N-types are brilliant in semiconductor fabrication
The parameters such as the conduction threshold of body pipe are all identical changes, and the mismatch very little with respect between can improve the work occurred when manufacture
Skill deviation influences LED drive circuit bring.
Refering to what is shown in Fig. 2, first current source 100 provided by the embodiments of the present application includes：
Current reference source 110 and the first image source 120, first image source 120 is for current reference source described in mirror image
It is exported after the reference current Ib to certain multiple of 110 outputs；
The output end of first image source 120 is connected with the drain electrode of the N-type transmission transistor NL.
And second current source 310 provided by the embodiments of the present application can be the second image source, second mirror image
It is exported after the reference current Ib to certain multiple that source 310 is exported for current reference source 110 described in mirror image.
In the embodiment of the present application, current source provided by the present application can be casecode current source, i.e. the application is real
Applying the current reference source 110 that example provides includes：First P-type transistor P1 and the second P-type transistor P2, first mirror image
Source includes：3rd P transistor and the 4th P-type transistor P4；
The source electrode of the source electrode of the first P-type transistor P1 and the third P-type transistor P3 are all connected with power supply end
VDD；
The grid of the first P-type transistor P1 is connected with the grid of the third P-type transistor P3, and the first P
The grid of transistor npn npn P1 is connected with the drain electrode of the second P-type transistor P2；
The drain electrode of the first P-type transistor P1 is connected with the source electrode of the second P-type transistor P2, second p-type
The drain electrode of transistor P2 connects ground terminal Gnd, and the grid of the second P-type transistor P2 is with the 4th P-type transistor P4's
Grid is connected, and the grid Circumscribing port Vdp of the second P-type transistor P2；
And the drain electrode of the third P-type transistor P3 is connected with the source electrode of the 4th P-type transistor P4, described
The drain electrode of four P-type transistor P4 connects the drain electrode of the N-type transmission transistor NL.
And second image source 310 provided by the embodiments of the present application includes：5th P-type transistor P5 and the 6th p-type
Transistor P6；
The source electrode of the 5th P-type transistor P5 connects the power supply end VDD, the 5th P-type transistor P5's
Grid connects the grid of the first P-type transistor P1, and it is brilliant that the drain electrode of the 5th P-type transistor P5 connects the 6th p-type
The source electrode of body pipe P6, the drain electrode of the 6th P-type transistor P6 and the in-phase end of the second operational amplifier AMP1 and described
The input terminal of current limiting element 320 is connected, the grid of the grid of the 6th P-type transistor P6 and the second P-type transistor P2
Extremely it is connected.
In one embodiment of the application, the anode supply end VDD_LED provided by the present application and the power supply end
VDD can be mutually independent power end；
Alternatively, the anode supply end VDD_LED provided by the present application and power supply end VDD can also be same
Power end.
Refering to what is shown in Fig. 2, the mirror image drive module 200 provided by the embodiments of the present application includes：
Multiple mirror image submodules 210, each mirror image submodule 210 include：
N-type drives transistor NX and connection control unit 211, and the N-type of all mirror image submodules 210 drives transistor
The drain electrode of NX is connected to the load end B of the mirror image drive module 200, and the source electrode of the N-type driving transistor NX connects
Ground terminal Gnd, the grid of the N-type driving transistor NX connect the connection control unit 211；
Wherein, the grid that the connection control unit 211 is used to control the N-type driving transistor NX connects the N-type
The grid or connection ground terminal Gnd of mirrored transistor N0, and the N-type mirror is connected in the grid of N-type driving transistor NX
As transistor N0 grid when, N-type driving transistor NX for N-type mirrored transistor NX described in mirror image electric current to certain
Multiple.
It should be understood that in the grid of the grid connection N-type mirrored transistor N0 of N-type driving transistor NX, N-type driving
Transistor NX for mirror image N-type mirrored transistor N0 electric current to certain multiple, wherein the mirror of all N-types driving transistor NX
Picture multiple can be identical, can not also be identical, is not particularly limited to this.Since all N-types driving transistor NX is connected in parallel on
The load end B of mirror image drive module 200, so, when mirror image drive module 200 works, the load end of mirror image drive module 200
The driving current of B output is the electric current for all N-types driving transistor NX that grid is connected to the grid of N-type mirrored transistor N0
The sum of, therefore, drive the grid of transistor NX to connect the grid of N-type mirrored transistor N0 by control preset quantity N-type, with
To mirror image N-type mirrored transistor N0 electric current to required multiple driving current.
In one embodiment of the application, connection control unit 211 provided by the present application may include a phase inverter INV and two
The identical transistor M1 and transistor M2 of a conductivity type (such as transistor M1 and transistor M2 are N-type transistor), wherein brilliant
The grid of body pipe M1 is connected with the input terminal of phase inverter INV, and transistor M1 is connected to the grid and N of N-type driving transistor NX
Between the grid of type mirrored transistor N0, and, the grid of transistor M2 is connected with the output end of phase inverter INV, and transistor M
2 are connected between the grid and ground terminal Gnd of N-type driving transistor NX；Need to control N-type driving transistor NX grid with
When the grid of N-type mirrored transistor N0 is connected, the control signal of the input terminal access of the grid and phase inverter INV of transistor M1,
Transistor M1 conducting is controlled, and the grid for controlling N-type driving transistor NX is connected with the grid of N-type mirrored transistor N0, and,
Since phase inverter INV is to the reverse phase of control signal, the control signal of reverse phase then controls transistor M2 cut-off, avoids N-type driving brilliant
The grid of body pipe NX is connected with ground terminal Gnd；In addition, brilliant in the grid and N-type mirror image for needing to disconnect N-type driving transistor NX
When connection between the grid of body pipe N0, the control signal of the input terminal access of the grid and phase inverter INV of transistor M1, control
Transistor M1 shutdown, and the connection controlled between the grid of N-type driving transistor NX and the grid of N-type mirrored transistor N0 is disconnected
It opens, and, since phase inverter INV is to the reverse phase of control signal, the control signal of reverse phase then controls transistor M2 conducting, controls N
The grid of type driving transistor NX is connected with ground terminal Gnd, and then turns off N-type driving transistor NX rapidly.
Correspondingly, the embodiment of the present application provides a kind of LED multi-path luminescent system, including：
LED multi-path and with the one-to-one driving circuit of every paths of LEDs, wherein the driving circuit be above-mentioned any one reality
The LED drive circuit of example offer is provided.
Refering to what is shown in Fig. 3, being a kind of structural schematic diagram of LED multi-path luminescent system provided by the embodiments of the present application, wherein
LED multi-path luminescent system includes：
Red light-emitting diode LR, green light LED LG and blue light-emitting diode LB, and, including for driving
The driving circuit 410 of red light-emitting diode LR, the driving circuit 420 for driving green light LED LG and for driving
The driving circuit 430 of green light LED LB, wherein on driving circuit 410, driving circuit 420 and driving circuit 430 be
State the LED drive circuit that any one embodiment provides.
It should be understood that LED multi-path luminescent system provided by the embodiments of the present application, due to red light-emitting diode LR, green
The respective conduction voltage drop of light-emitting diode LG and blue light-emitting diode LB is different, wherein green light LED LG
It is essentially identical with the conduction voltage drop of blue light-emitting diode LB, and the conduction voltage drop of red light-emitting diode LR is less than green luminescence
The conduction voltage drop of diode LG and blue light-emitting diode LB, therefore, in red light-emitting diode LR, green light LED LG
When being all connected with same anode power end VDD_LED with the anode of blue light-emitting diode LB, if not set pincers in driving circuit
Position module, then red light-emitting diode LR, green light LED LG and blue light-emitting diode LB are to respective corresponding driving electricity
The voltage of the load end of mirror image drive module impacts in road；And due to driving circuit 410 provided by the embodiments of the present application, drive
Dynamic circuit 420 and driving circuit 430 are all set in clamper module, because regardless of red light-emitting diode LR, two pole of green luminescence
How the conduction voltage drop of pipe LG and blue light-emitting diode LB change, and will not make to the voltage of the load end of mirror image drive module
At influence, the voltage clamping of the load end of mirror image drive module passes through the first operational amplifier composition in predeterminated voltage
Feedback loop guarantees that voltage is identical as the voltage of the load end of mirror image drive module at the drain electrode of N-type mirrored transistor, so that
It is identical with the operating voltage condition of mirror image drive module to obtain N-type mirrored transistor, and then guarantees that mirror image drive module is more accurate
Mirror image N-type mirrored transistor electric current so that the load end of mirror image drive module be LED cathode provide driving current essence
Degree is high, and the final light mixing effect for guaranteeing LED multi-path luminescent system is high.
In one embodiment of the application, LED multi-path luminescent system provided by the present application be can be applied in display device, also
It can be applied in illuminating device, or be applied in other light emitting structures, this application is not particularly limited.
The embodiment of the present application provides a kind of LED drive circuit and LED multi-path luminescent system, including：First current source, N
Type transmission transistor, N-type mirrored transistor, the first operational amplifier, mirror image drive module and clamper module；First electric current
Source output terminal is connected with the grid of the drain electrode of the N-type transmission transistor and the N-type mirrored transistor, the N-type transmission
The grid of transistor is connected with the output end of first operational amplifier, the source electrode of the N-type transmission transistor and the N-type
The drain electrode of mirrored transistor is connected with the negative phase end of first operational amplifier, and the source electrode of the N-type mirrored transistor connects
Connect ground terminal；After electric current to presupposition multiple of the mirror image drive module for N-type mirrored transistor described in mirror image, by described
The load end of mirror image drive module is transmitted to the cathode of LED, the anode jointed anode power end of the LED, the mirror image driving
The load end of module is connected with the in-phase end of first operational amplifier；And the clamper module is used for the mirror image
The voltage clamping of the load end of drive module is to predeterminated voltage, and the predeterminated voltage is no more than the N-type mirrored transistor
Upper limit voltage at drain electrode.
As shown in the above, technical solution provided by the embodiments of the present application passes through mirror image drive module mirror image N-type mirror image
The electric current of transistor is transmitted to the yin of LED to presupposition multiple by the load end of mirror image drive module after obtaining driving current
Pole is shone with carrying out driving to LED.Wherein, due to clamper module by the voltage clamping of the load end of mirror image drive module to pre-
If voltage, and predeterminated voltage is not more than the upper limit voltage at the drain electrode of N-type mirrored transistor, so that the load of mirror image drive module
The voltage of the voltage at end and anode supply end and LED itself conduction voltage drop is irrelevant, therefore, no matter anode supply end and LED
How conduction voltage drop itself changes, and the feedback loop that can be made up of the first operational amplifier guarantees N-type mirrored transistor
Drain electrode at voltage it is identical as the voltage of the load end of mirror image drive module so that N-type mirrored transistor and mirror image drive mould
The operating voltage condition of block is identical, and then guarantees the driving current essence that the cathode that the load end of mirror image drive module is LED provides
Degree is high.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of LED drive circuit, which is characterized in that including：
First current source, N-type transmission transistor, N-type mirrored transistor, the first operational amplifier, mirror image drive module and clamper
Module；
First current source output and the drain electrode of the N-type transmission transistor and the grid of the N-type mirrored transistor are equal
It is connected, the grid of the N-type transmission transistor is connected with the output end of first operational amplifier, and the N-type transmits crystal
The source electrode of pipe is connected with the negative phase end of the drain electrode of the N-type mirrored transistor and first operational amplifier, the N-type mirror
As the source electrode of transistor connects ground terminal；
After electric current to presupposition multiple of the mirror image drive module for N-type mirrored transistor described in mirror image, pass through the mirror image
The load end of drive module is transmitted to the cathode of LED, the anode jointed anode power end of the LED, the mirror image drive module
Load end be connected with the in-phase end of first operational amplifier；
And the clamper module is used for the voltage clamping of the load end of the mirror image drive module to predeterminated voltage, and institute
Predeterminated voltage is stated no more than the upper limit voltage at the drain electrode of the N-type mirrored transistor.
2. LED drive circuit according to claim 1, which is characterized in that the clamper module includes：
Second current source, second operational amplifier, N-type clamp transistor and current limiting element；
The input terminal of the output end of second current source and the in-phase end of the second operational amplifier and the current limiting element
It is connected, the output end of the second operational amplifier is connected with the grid of its negative phase end and the N-type clamp transistor, institute
State the output end connection ground terminal of current limiting element；
And the drain electrode of the N-type clamp transistor connects the cathode of the LED, the source electrode connection of the N-type clamp transistor
The load end of the mirror image drive module.
3. LED drive circuit according to claim 2, which is characterized in that the current limiting element is diode, is in diode
The N-type transistor or resistance of connection type.
4. LED drive circuit according to claim 2, which is characterized in that first current source includes：
Current reference source and the first image source, reference current of first image source for the output of current reference source described in mirror image
It is exported after to certain multiple；
The output end of first image source is connected with the drain electrode of the N-type transmission transistor.
5. LED drive circuit according to claim 4, which is characterized in that second current source is the second image source, institute
It is exported after stating reference current to certain multiple of second image source for the output of current reference source described in mirror image.
6. LED drive circuit according to claim 5, which is characterized in that the current reference source includes：First p-type is brilliant
Body pipe and the second P-type transistor, first image source include：3rd P transistor and the 4th P-type transistor；
The source electrode of the source electrode of first P-type transistor and the third P-type transistor is all connected with power supply end；
The grid of first P-type transistor is connected with the grid of the third P-type transistor, and first P-type transistor
Grid be connected with the drain electrode of second P-type transistor；
The drain electrode of first P-type transistor is connected with the source electrode of second P-type transistor, second P-type transistor
Drain electrode connection ground terminal, the grid of second P-type transistor are connected with the grid of the 4th P-type transistor；
And the drain electrode of the third P-type transistor is connected with the source electrode of the 4th P-type transistor, the 4th P-type crystal
The drain electrode of pipe connects the drain electrode of the N-type transmission transistor.
7. LED drive circuit according to claim 6, which is characterized in that second image source includes：5th p-type is brilliant
Body pipe and the 6th P-type transistor；
The source electrode of 5th P-type transistor connects the power supply end, described in the grid connection of the 5th P-type transistor
The grid of first P-type transistor, the drain electrode of the 5th P-type transistor connect the source electrode of the 6th P-type transistor, and described the
The drain electrode of six P-type transistors is connected with the input terminal of the in-phase end of the second operational amplifier and the current limiting element, institute
The grid for stating the 6th P-type transistor is connected with the grid of second P-type transistor.
8. LED drive circuit according to claim 6, which is characterized in that the anode supply end and the power supply
End is mutually independent power end；
Alternatively, the anode supply end and the power supply end are same power end.
9. LED drive circuit according to claim 1, which is characterized in that the mirror image drive module includes：
Multiple mirror image submodules, each mirror image submodule include：
N-type drives transistor and connection control unit, and the drain electrode of the N-type driving transistor of all mirror image submodules is connected
Source electrode for the load end of the mirror image drive module, the N-type driving transistor connects ground terminal, and the N-type drives crystal
The grid of pipe connects the connection control unit；
Wherein, the grid that the connection control unit is used to control the N-type driving transistor connects the N-type mirrored transistor
Grid or connection ground terminal, and the N-type driving transistor grid connect the grid of the N-type mirrored transistor when,
N-type driving transistor for N-type mirrored transistor described in mirror image electric current to certain multiple.
10. a kind of LED multi-path luminescent system, which is characterized in that including：
LED multi-path and with the one-to-one driving circuit of every paths of LEDs, wherein the driving circuit is that claim 1~9 is any
LED drive circuit described in one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810757234.9A CN108848594A (en) | 2018-07-11 | 2018-07-11 | A kind of LED drive circuit and LED multi-path luminescent system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810757234.9A CN108848594A (en) | 2018-07-11 | 2018-07-11 | A kind of LED drive circuit and LED multi-path luminescent system |
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