CN108847436A - A kind of epitaxial structure and its manufacturing method of light emitting diode - Google Patents
A kind of epitaxial structure and its manufacturing method of light emitting diode Download PDFInfo
- Publication number
- CN108847436A CN108847436A CN201810401642.0A CN201810401642A CN108847436A CN 108847436 A CN108847436 A CN 108847436A CN 201810401642 A CN201810401642 A CN 201810401642A CN 108847436 A CN108847436 A CN 108847436A
- Authority
- CN
- China
- Prior art keywords
- layer
- sublayer
- composite construction
- epitaxial structure
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000002131 composite material Substances 0.000 claims abstract description 42
- 238000010276 construction Methods 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 31
- 239000010980 sapphire Substances 0.000 claims abstract description 31
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 28
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 210
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 8
- 241001062009 Indigofera Species 0.000 claims description 2
- 239000010437 gem Substances 0.000 claims description 2
- 229910001751 gemstone Inorganic materials 0.000 claims description 2
- 230000007704 transition Effects 0.000 abstract description 19
- 239000013078 crystal Substances 0.000 abstract description 18
- 229910017083 AlN Inorganic materials 0.000 abstract description 17
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 17
- 230000035772 mutation Effects 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 29
- 238000004020 luminiscence type Methods 0.000 description 14
- 238000005215 recombination Methods 0.000 description 14
- 230000006798 recombination Effects 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 239000004411 aluminium Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003752 improving hair Effects 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of epitaxial structure of light emitting diode and its manufacturing methods, belong to technical field of semiconductors.Epitaxial structure includes Sapphire Substrate and stacks gradually composite construction, nitride buffer layer, undoped gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer on a sapphire substrate, composite construction includes (n+1) a first sublayer and n the second sublayers, n is positive integer, (n+1) a first sublayer and the n alternately laminated settings of the second sublayer；Each first sublayer is aln layer, and each second sublayer is alumina layer.The present invention is by being alternately stacked aln layer and alumina layer in the Sapphire Substrate that main component is aluminium oxide, transition of the lattice feature from aluminium oxide to aluminium nitride is distributed to entire composite construction from an interface in this way, improve the influence of lattice constant mutation, the effectively stress of dispersion lattice mismatch generation, it avoids stress from excessively concentrating, the crystal quality of active layer being subsequently formed etc. can be improved.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to the epitaxial structure of a kind of light emitting diode and its manufacturer
Method.
Background technique
Light emitting diode (English：Light Emitting Diode, referred to as：It LED) is a kind of semi-conductor electricity that can be luminous
Subcomponent.As efficient, environmentally friendly, green solid-state lighting light source of new generation, LED has low-voltage, low-power consumption, small in size, again
Amount is light, the service life is long, high reliability.
Gallium nitride (GaN) is a kind of semiconductor material of broad stopband, and forbidden bandwidth is about 3.4eV, can satisfy photon energy
The Production conditions of higher blue light are measured, blue light can issue yellow light with excitated fluorescent powder, and yellow light can form with blue light white again
Light.Therefore since the 1990s, gallium nitride based LED was succeeded in developing by Japanese Scientists, the technology of LED constantly into
The light emission luminance of degree, LED is continuously improved, and the application field of LED is also increasingly wider.
The epitaxial structure of gallium nitride based LED includes Sapphire Substrate and stacks gradually nitrogen on a sapphire substrate at present
Change aluminium buffer layer, nitride buffer layer, undoped gallium nitride layer, n type semiconductor layer, active layer, electronic barrier layer, p-type partly to lead
Body layer and p-type contact layer.Aluminum nitride buffer layer, nitride buffer layer and undoped gallium nitride layer for alleviate Sapphire Substrate and
Lattice mismatch between n type semiconductor layer, the hole that the electronics and p type semiconductor layer that n type semiconductor layer provides provide are injected with
Recombination luminescence is carried out in active layer, electronic barrier layer is non-radiative for stopping electron transition to carry out into p type semiconductor layer with hole
The Ohmic contact between transparent conductive film compound, that p-type contact layer is formed for realizing chip fabrication technique.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems：
Although aluminum nitride buffer layer can be alleviated between Sapphire Substrate (main material is aluminium oxide) and gallium nitride material
Lattice mismatch, but sapphire lattice constant is 4.758, and the lattice constant of aluminium nitride is 3.110, Sapphire Substrate and nitrogen
Change between aluminium buffer layer and still there is biggish lattice mismatch, leads to the aluminum nitride buffer layer crystal formed on a sapphire substrate
Second-rate, the interface of Sapphire Substrate and aluminum nitride buffer layer influences the active layer being subsequently formed there are biggish stress
Deng crystal quality, active layer occur electric leakage, dislocation line generate the problems such as, be unfavorable for the recombination luminescence of electrons and holes, reduce
The luminous efficiency of light emitting diode, while big defect density can be generated, the aging of accelerated luminescence diode influences light emitting diode
Service life.
Summary of the invention
In order to solve problems in the prior art, the embodiment of the invention provides a kind of epitaxial structure of light emitting diode and its
Manufacturing method.The technical solution is as follows：
On the one hand, the embodiment of the invention provides a kind of epitaxial structure of light emitting diode, the epitaxial structure includes indigo plant
Jewel substrate and the nitride buffer layer being sequentially laminated in the Sapphire Substrate, undoped gallium nitride layer, N-type semiconductor
Layer, active layer and p type semiconductor layer, the epitaxial structure further include composite construction, and the composite construction setting is described blue precious
Between stone lining bottom and the nitride buffer layer；The composite construction includes (n+1) a first sublayer and n the second sublayers, and n is
Positive integer, (n+1) a first sublayer and the n alternately laminated settings of the second sublayer；Each first sublayer is nitrogen
Change aluminium layer, each second sublayer is alumina layer.
Optionally, the thickness of described (n+1) a first sublayer successively increases along the stacking direction of the composite construction.
Optionally, the thickness of the n the second sublayers successively reduces along the stacking direction of the composite construction.
Optionally, each first sublayer with a thickness of 100 angstroms~1000 angstroms, each second sublayer with a thickness of
100 angstroms~500 angstroms.
Optionally, 3≤n≤7.
Optionally, the epitaxial structure further includes stress release layer, and the stress release layer is arranged in the N-type semiconductor
Between layer and the active layer；The stress release layer includes the superlattice structure and single layer structure stacked gradually；The super crystalline substance
Lattice structure includes (m+1) a third sublayer and m the 4th sublayers, and m is positive integer, and (m+1) a third sublayer and the m are a
The 4th alternately laminated setting of sublayer；Each third sublayer is the indium gallium nitrogen layer of n-type doping, and each 4th sublayer is N
The gallium nitride layer of type doping；The single layer structure is the gallium nitride layer not adulterated.
On the other hand, the embodiment of the invention provides a kind of manufacturing method of the epitaxial structure of light emitting diode, the systems
The method of making includes：
One substrate is provided；
Sequentially form over the substrate composite construction, nitride buffer layer, undoped gallium nitride layer, n type semiconductor layer,
Active layer and p type semiconductor layer；
Wherein, the composite construction includes (n+1) a first sublayer and n the second sublayers, and n is positive integer, described (n+1)
A first sublayer and the n alternately laminated settings of the second sublayer；Each first sublayer is aln layer, each described the
Two sublayers are alumina layer.
Optionally, temperature when described (n+1) a first sublayer is formed successively rises along the stacking direction of the composite construction
It is high.
Optionally, the temperature when formation of the n the second sublayers is successively reduced along the stacking direction of the composite construction.
Optionally, pressure when described (n+1) a first sublayer is formed is equal, the pressure when n the second sublayers are formed
Power is equal.
Technical solution bring beneficial effect provided in an embodiment of the present invention is：
By being alternately stacked aln layer and alumina layer in the Sapphire Substrate that main component is aluminium oxide, this
Transition of the sample lattice feature from aluminium oxide to aluminium nitride is distributed to entire composite construction from an interface, improves lattice constant mutation
Influence, effectively disperse lattice mismatch generate stress, avoid stress from excessively concentrating, the active layer etc. being subsequently formed can be improved
Crystal quality, reduce the density of line defect, be conducive to the recombination luminescence of electrons and holes, finally improve light emitting diode
Luminous efficiency extends the service life of light emitting diode.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of the epitaxial structure of light emitting diode provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of composite construction provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of stress release layer provided in an embodiment of the present invention；
Fig. 4 is a kind of flow chart of the manufacturing method of the epitaxial structure of light emitting diode provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of epitaxial structure of light emitting diode, Fig. 1 is provided in an embodiment of the present invention outer
The structural schematic diagram for prolonging structure, referring to Fig. 1, which includes Sapphire Substrate 10, composite construction 20, nitride buffer layer
30, undoped gallium nitride layer 40, n type semiconductor layer 50, active layer 60 and p type semiconductor layer 70, composite construction 20, gallium nitride are slow
It rushes layer 30, undoped gallium nitride layer 40, n type semiconductor layer 50, active layer 60 and p type semiconductor layer 70 and is sequentially laminated on sapphire
On substrate 10.
Fig. 2 is the structural schematic diagram of composite construction provided in an embodiment of the present invention, and referring to fig. 2, composite construction 20 includes (n+
1) a first sublayer 21 and n the second sublayers 22, n are positive integer, (n+1) a first sublayer 21 and n the second sublayer 22 alternatings
It is stacked.Each first sublayer 21 is aln layer, and each second sublayer 22 is alumina layer.
The embodiment of the present invention is by being alternately stacked aln layer in the Sapphire Substrate that main component is aluminium oxide
And alumina layer, transition of such lattice feature from aluminium oxide to aluminium nitride are distributed to entire composite construction from an interface, change
The influence of kind lattice constant mutation effectively disperses the stress that lattice mismatch generates, avoids stress from excessively concentrating, can be improved subsequent
The crystal quality of the active layer of formation etc. reduces the density of line defect, is conducive to the recombination luminescence of electrons and holes, final to improve
The luminous efficiency of light emitting diode, extends the service life of light emitting diode.
Optionally, the thickness of (n+1) a first sublayer 21 can successively increase along the stacking direction of composite construction 20.It is close
The aln layer of Sapphire Substrate is relatively thin, will not generate very big stress；And the thickness of aln layer successively increases, gradually
Lattice feature is from alumina transition to aluminium nitride, and using the difference of thickness come the intensity of dispersive stress, raising is subsequently formed
Active layer etc. crystal quality, reduce the density of line defect, be conducive to the recombination luminescence of electrons and holes, finally improve hair
The luminous efficiency of optical diode extends the service life of light emitting diode.
Preferably, the thickness difference of two neighboring first sublayer 21 can be equal.By uniformly increasing the thickness of the first sublayer,
Smooth transition of the lattice feature from aluminium oxide to aluminium nitride may be implemented, the intensity of effective dispersive stress improves subsequent shape
At active layer etc. crystal quality, reduce the density of line defect, be conducive to the recombination luminescence of electrons and holes, finally improve
The luminous efficiency of light emitting diode extends the service life of light emitting diode.
Specifically, the thickness of each first sublayer 21 can be 100 angstroms~1000 angstroms.If the thickness of aln layer is less than
100 angstroms, then the lattice feature of aln layer may can not be embodied since the thickness of aln layer is too small, and then cannot achieve crystalline substance
Slow transition of the lattice feature from aluminium oxide to aluminium nitride；If the thickness of aln layer is greater than 1000 angstroms, may be due to aluminium nitride
The thickness of layer is too big and influences the slow transition of lattice feature, it is also possible to cause the waste of material, increase cost of implementation.
Optionally, the thickness of n the second sublayers 22 can successively reduce along the stacking direction of composite construction 20.Close to blue precious
The alumina layer at stone lining bottom is thicker, can largely continue substrate characteristic, will not generate very big stress；And alumina layer
Thickness successively reduce, gradually lattice feature from alumina transition to aluminium nitride, using the difference of thickness come dispersive stress
Intensity improves the crystal quality of active layer being subsequently formed etc., reduces the density of line defect, is conducive to electrons and holes
Recombination luminescence finally improves the luminous efficiency of light emitting diode, extends the service life of light emitting diode.
Preferably, the thickness difference of two neighboring second sublayer 22 can be equal.By uniformly reducing the thickness of the second sublayer,
Smooth transition of the lattice feature from aluminium oxide to aluminium nitride may be implemented, the intensity of effective dispersive stress improves subsequent shape
At active layer etc. crystal quality, reduce the density of line defect, be conducive to the recombination luminescence of electrons and holes, finally improve
The luminous efficiency of light emitting diode extends the service life of light emitting diode.
Specifically, the thickness of each second sublayer 22 can be 100 angstroms~500 angstroms.If the thickness of alumina layer is less than 100
Angstrom, then the lattice feature of alumina layer may can not be embodied since the thickness of alumina layer is too small, and then cannot achieve lattice
Slow transition of the feature from aluminium oxide to aluminium nitride；If the thickness of alumina layer is greater than 500 angstroms, may be due to alumina layer
Thickness is too big and influences the slow transition of lattice feature, it is also possible to cause the waste of material, increase cost of implementation.
Optionally, 3≤n≤7.If n, may be due to the quantity of alternately stacked aln layer and alumina layer less than 3
It cannot achieve slow transition of the lattice feature from aluminium oxide to aluminium nitride very little；If n is greater than 7, may be due to alternating layer
The quantity of folded aln layer and alumina layer is too many and causes the waste of material, increases cost of implementation.
For example, n=3, composite construction 20 includes the first sublayer 21a, the second sublayer 22a, the first sublayer stacked gradually
21b, the second sublayer 22b, the first sublayer 21c, the second sublayer 22c and the first sublayer 21d；First sublayer 21a with a thickness of 100
Angstrom, the second sublayer 22a with a thickness of 500 angstroms, the first sublayer 21b with a thickness of 300 angstroms, the second sublayer 22b with a thickness of 300
Angstrom, the first sublayer 21c with a thickness of 500 angstroms, the second sublayer 22c with a thickness of 100 angstroms, the first sublayer 21d with a thickness of 1000
Angstrom.
Specifically, Sapphire Substrate 10 can be graphical sapphire substrate (English：Patterned Sapphire
Substrate, referred to as：PSS)；Figure in Sapphire Substrate 10 can be the multiple protrusions arranged in array, and each protrusion can
Think that basal diameter is 2 μm, is highly 1.5 μm of hemisphere.N type semiconductor layer 50 can be the gallium nitride layer of n-type doping, P
Type semiconductor layer 70 can be the gallium nitride layer of p-type doping.Active layer 60 may include that multiple Quantum Well and multiple quantum are built, more
A Quantum Well and multiple quantum build alternately laminated setting；Each Quantum Well can be indium gallium nitrogen layer, and each quantum base can be nitrogen
Change gallium layer.For Quantum Well for realizing the recombination luminescence of electrons and holes, quantum base avoids phase for two neighboring Quantum Well to be isolated
The distributed wave function overlapping of carrier in adjacent two Quantum Well, it is ensured that the luminous efficiency in Quantum Well.
More specifically, the thickness of nitride buffer layer 30 can be 30nm~50nm, such as 40nm；Undoped gallium nitride layer 40
Thickness can be 0.8 μm~1.2 μm, such as 1 μm.The thickness of n type semiconductor layer 50 can be 2.8 μm~3.2 μm, such as 3 μm；N
The doping concentration of N type dopant can be 8*10 in type semiconductor layer 5019/cm3~2*1020/cm3, such as 1020/cm3；P-type is partly led
The thickness of body layer 70 can be 180nm~220nm, such as 200nm.The thickness of each Quantum Well can be 2nm~5nm, such as
3.5nm；The thickness that each quantum is built can be 8nm~15nm, such as 11.5nm；What the quantity of multiple Quantum Well and multiple quantum were built
Quantity is equal, and the quantity that multiple quantum are built can be 6~10, such as 8.
Optionally, as shown in Figure 1, the epitaxial structure can also include stress release layer 80, stress release layer 80 is arranged in N
Between type semiconductor layer 50 and active layer 60.Fig. 3 is the structural schematic diagram of stress release layer provided in an embodiment of the present invention, referring to
Fig. 3, stress release layer 80 include the superlattice structure 81 and single layer structure 82 stacked gradually.Superlattice structure 81 includes (m+1)
A third sublayer 81a and m the 4th sublayer 81b, m are positive integer, and (m+1) a third sublayer 81a and m the 4th sublayer 81b are handed over
For being stacked.Each third sublayer 81a is the indium gallium nitrogen layer of n-type doping, and each 4th sublayer 81b is the nitridation of n-type doping
Gallium layer.Single layer structure 82 is the gallium nitride layer not adulterated.
Since the forbidden bandwidth of indium gallium nitrogen layer and gallium nitride layer differs larger, pass through alternately laminated indium gallium nitrogen layer and gallium nitride
Layer can play the role of good stress relief, can provide crystal quality preferable bottom for the formation of subsequent active layer, mention
The lattice quality of high active layer, and then promote the luminous efficiency of light emitting diode.And doped with n-type doping in superlattice structure
Agent is conducive to match with n type semiconductor layer, improves adverse effect of the lattice mismatch to crystal quality, further promotes luminous two
The luminous efficiency of pole pipe.In addition, the single layer structure being finally laminated does not adulterate, best crystal can be provided for the formation of active layer
The bottom of quality improves the lattice quality of active layer, and then promotes the luminous efficiency of light emitting diode.
Preferably, the thickness of each third sublayer 81a can be 0.5nm~1.5nm, such as 1nm.If the thickness of third sublayer
Less than 0.5nm, then the effect of stress release may be caused too poor since third sublayer is too thin；If the thickness of third sublayer is greater than
1.5nm then may cause series resistance to become larger since third sublayer is too thick.
Preferably, the thickness of each 4th sublayer 81b can be 1nm~2nm, such as 1.5nm.If the thickness of the 4th sublayer is small
In 1nm, then the effect of stress release may be caused too poor since the 4th sublayer is too thin；If the thickness of the 4th sublayer is greater than 2nm,
Then series resistance may be caused to become larger since the 4th sublayer is too thick.
It is highly preferred that the thickness of single layer structure 82 can be equal with the thickness of the 4th sublayer 81b.
Preferably, 2≤m≤4, such as m=3.If m less than 2, possibly can not play the role of stress release；If m is greater than 5,
Then the quantity of possible third sublayer and the 4th sublayer causes series resistance to become larger too much.
Specifically, the doping concentration of N type dopant can be for less than N-type in n type semiconductor layer 50 in superlattice structure 81
The doping concentration of dopant, in order to avoid cause the electron amount injected in active layer excessive.
More specifically, the doping concentration of N type dopant can be 8*10 in superlattice structure 8118/cm3~2*1019/cm3,
Such as 1019/cm3。
Optionally, which can also include electronic barrier layer, and electronic barrier layer setting is partly led in active layer and p-type
Between body layer, non-radiative recombination is carried out with hole into p type semiconductor layer to avoid electron transition, finally influences light emitting diode
Luminous efficiency.
Specifically, electronic barrier layer can be the gallium nitride layer of p-type doping.
More specifically, in electronic barrier layer aluminium component content can less than 10%, such as 7%；The thickness of electronic barrier layer
It can be 40nm~60nm, such as 50nm.
Optionally, which can also include p-type contact layer, and p-type contact layer is arranged on p type semiconductor layer, with
The Ohmic contact between transparent conductive film formed in realization and chip fabrication processes.
Specifically, p-type contact layer can be the indium gallium nitrogen layer of p-type doping.
More specifically, the content of indium component can be 2%~4%, such as 3% in p-type contact layer；The thickness of p-type contact layer
It can be 4nm~6nm, such as 3nm.If the content of indium component is too low in p-type contact layer or the thickness of p-type contact layer is too small,
The effect that all may cause Ohmic contact is too poor；If in p-type contact layer the content of indium component is too high or p-type contact layer
Thickness is too big, and the light that all may cause active layer sending is absorbed, and reduces the light extraction efficiency of light emitting diode.
Simultaneously by the epitaxial structure of the epitaxial structure of light emitting diode provided in this embodiment and existing light emitting diode
Chip is made and carries out the aging of 1000 hours 1.5 times of electric currents driving, the epitaxial structure of existing light emitting diode and this implementation
The epitaxial structure for the light emitting diode that example provides is essentially identical, the difference is that only, the epitaxy junction of existing light emitting diode
Structure is aluminum nitride buffer layer between Sapphire Substrate and nitride buffer layer, and light emitting diode provided in this embodiment is outer
Prolonging structure is alternately stacked aln layer and alumina layer between Sapphire Substrate and nitride buffer layer.Detect two kinds of cores
Brightness decay rate after piece aging, drain conditions discovery, the brightness of chip made of the epitaxial structure of existing light emitting diode
Attenuation rate is 5.6%, and the brightness decay rate of chip made of the epitaxial structure of light emitting diode provided in this embodiment is
2.9%, the brightness decay rate of chip reduces 2.7%；The electric leakage of chip made of the epitaxial structure of existing light emitting diode
Mean value is 2.6 μ A, and the electric leakage mean value of chip made of the epitaxial structure of light emitting diode provided in this embodiment is 1.5 μ A, leakage
Electric mean value reduces 1.1 μ A.
The embodiment of the invention provides a kind of manufacturing method of the epitaxial structure of light emitting diode, Fig. 4 is that the present invention is implemented
The flow chart of the epitaxial structure for the light emitting diode that example provides, referring to fig. 4, which includes：
Step 201：One substrate is provided.
Step 202：Composite construction, nitride buffer layer, undoped gallium nitride layer, N-type is sequentially formed on substrate partly to lead
Body layer, active layer and p type semiconductor layer.
In the present embodiment, composite construction includes (n+1) a first sublayer and n the second sublayers, and n is positive integer, (n+1)
A first sublayer and the n alternately laminated settings of the second sublayer.Each first sublayer is aln layer, and each second sublayer is oxidation
Aluminium layer.
Optionally, temperature when (n+1) a first sublayer is formed can successively be increased along the stacking direction of composite construction.It leans on
The formation temperature of the aln layer of nearly Sapphire Substrate is lower, and crystal quality is poor, and the stress of initiation is smaller, is conducive to lattice spy
Point improves the crystal quality of active layer being subsequently formed etc., reduces the density of line defect, favorably from alumina transition to aluminium nitride
In the recombination luminescence of electrons and holes, the luminous efficiency of light emitting diode is finally improved, extends the use of light emitting diode
Service life.
Preferably, the temperature difference when formation of two neighboring first sublayer can be equal.By uniformly increasing the first sublayer shape
At when temperature, may be implemented smooth transition of the lattice feature from aluminium oxide to aluminium nitride, the intensity of effective dispersive stress,
The crystal quality for improving active layer being subsequently formed etc., reduces the density of line defect, is conducive to the recombination luminescence of electrons and holes,
The luminous efficiency of light emitting diode is finally improved, the service life of light emitting diode is extended.
Specifically, the temperature when formation of each first sublayer can be 300 DEG C~500 DEG C.
Optionally, the temperature when formation of n the second sublayers can successively be reduced along the stacking direction of composite construction.It is close
The formation temperature of the alumina layer of undoped gallium nitride layer is lower, and crystal quality is poor, and the stress of initiation is smaller, is conducive to lattice
Feature improves the crystal quality of active layer being subsequently formed etc. from alumina transition to aluminium nitride, reduces the density of line defect, has
Conducive to the recombination luminescence of electrons and holes, the luminous efficiency of light emitting diode is finally improved, extends making for light emitting diode
Use the service life.
Preferably, the temperature difference when formation of two neighboring second sublayer can be equal.By uniformly reducing the second sublayer shape
At when temperature, may be implemented smooth transition of the lattice feature from aluminium oxide to aluminium nitride, the intensity of effective dispersive stress,
The crystal quality for improving active layer being subsequently formed etc., reduces the density of line defect, is conducive to the recombination luminescence of electrons and holes,
The luminous efficiency of light emitting diode is finally improved, the service life of light emitting diode is extended.
Specifically, the temperature when formation of each second sublayer can be 400 DEG C~500 DEG C.
Optionally, pressure when (n+1) a first sublayer is formed can be equal, and pressure when n the second sublayers are formed can
With equal, realization is simple and convenient.
Specifically, the pressure when formation of each first sublayer can be 5mTorr~50mTorr, and each second sublayer is formed
When pressure can be 5mTorr~30mTorr.
It or include the first sublayer 21a stacked gradually, the second sublayer 22a, the first sublayer 21b, the with composite construction 20
For two sublayer 22b, the first sublayer 21c, the second sublayer 22c and the first sublayer 21d, temperature when the first sublayer 21a is formed is
300 DEG C, pressure 30mTorr；Temperature when the second sublayer 22a formation is 500 DEG C, pressure 20mTorr；First sublayer 21b
Temperature when formation is 350 DEG C, pressure 30mTorr；Temperature when the second sublayer 22b formation is 450 DEG C, and pressure is
20mTorr；Temperature when the first sublayer 21c formation is 400 DEG C, pressure 30mTorr；Temperature when the second sublayer 22c formation
It is 400 DEG C, pressure 20mTorr；Temperature when the first sublayer 21d formation is 450 DEG C, pressure 30mTorr.
Optionally, composite construction is formed on a sapphire substrate, may include：
Composite construction is formed using magnetron sputtering technique on a sapphire substrate, the film layer for facilitating control to be formed, Er Qietong
It crosses and changes the gas that is passed through, the alternately laminated of aln layer and alumina layer can be realized.
Specifically, the first sublayer can be formed by sputtered aluminum target in the plasma atmosphere of nitrogen, in the plasma of oxygen
Sputtered aluminum target forms the second sublayer in body atmosphere.
More specifically, the purity of aluminium target can be 99.999%, the distance between aluminium target and Sapphire Substrate can be
5cm；When forming the first sublayer, aluminium target is arranged in the mixed gas of nitrogen and argon gas；When forming the second sublayer, the setting of aluminium target exists
In the mixed gas of oxygen and argon gas.
Further, the flow for the nitrogen being passed through when forming the first sublayer is greater than the oxygen being passed through when forming the second sublayer
Flow.Since oxygen and aluminium are easy to react, the flow for being passed through oxygen is reduced, it is possible to prevente effectively from the thickness of the second sublayer is too
Greatly, transition of the lattice feature from aluminium oxide to aluminium nitride is influenced.
Preferably, it is formed after composite construction on a sapphire substrate, which can also include：
Composite construction is handled using gas.
Specifically, the processing time can be 5 minutes, to remove the pollutant of composite structure surface.
Specifically, which may include：
Composite construction is formed on a sapphire substrate；
Controlled at 500 DEG C~600 DEG C (such as 550 DEG C), nitride buffer layer is formed on composite construction；
Controlled at 950 DEG C~1050 DEG C (such as 1000 DEG C), undoped gallium nitride layer is formed on nitride buffer layer；
Controlled at 1100 DEG C~1200 DEG C (such as 1150 DEG C), n type semiconductor layer is formed on undoped gallium nitride layer；
Active layer is formed on n type semiconductor layer, temperature when Quantum Well is formed is 700 DEG C~800 DEG C (such as 750 DEG C),
Temperature when quantum is built to be formed is 800 DEG C~900 DEG C (such as 850 DEG C)；
Controlled at 900 DEG C~1000 DEG C (such as 950 DEG C), p type semiconductor layer is formed on active layer.
Optionally, which can also include：
Form stress release layer on n type semiconductor layer, the temperature when formation of third sublayer be 800 DEG C~900 DEG C (such as
850 DEG C), temperature when the 4th sublayer is formed is 900 DEG C~1000 DEG C (such as 950 DEG C).
Correspondingly, active layer is formed on stress release layer.
Optionally, which can also include：
Controlled at 900 DEG C~950 DEG C (such as 925 DEG C), electronic barrier layer is formed on active layer.
Correspondingly, p type semiconductor layer is formed on electronic barrier layer.
Optionally, which can also include：
Controlled at 950 DEG C~1050 DEG C (such as 1000 DEG C), p-type contact layer is formed on p type semiconductor layer.
In specific implementation, the gaseous mixture of high-purity hydrogen, high pure nitrogen and high-purity hydrogen and high pure nitrogen can be used
One in body is used as carrier gas, carries gallium, aluminium, the organic source of indium and corresponding ammonia, silane or magnesium source and is synthesized, passes through gold
Belong to organic compound chemical vapor deposition (English：Metal organic Chemical Vapor Deposition, referred to as：
MOCVD the deposition process of each layers such as undoped gallium nitride layer) is realized,
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of epitaxial structure of light emitting diode, the epitaxial structure includes Sapphire Substrate and is sequentially laminated on the indigo plant
Nitride buffer layer, undoped gallium nitride layer, n type semiconductor layer, active layer and p type semiconductor layer on jewel substrate, it is special
Sign is that the epitaxial structure further includes composite construction, and the composite construction is arranged in the Sapphire Substrate and the nitridation
Between gallium buffer layer；The composite construction includes (n+1) a first sublayer and n the second sublayers, and n is positive integer, described (n+1)
A first sublayer and the n alternately laminated settings of the second sublayer；Each first sublayer is aln layer, each described the
Two sublayers are alumina layer.
2. epitaxial structure according to claim 1, which is characterized in that the thickness of (n+1) a first sublayer is described in
The stacking direction of composite construction successively increases.
3. epitaxial structure according to claim 1 or 2, which is characterized in that the thickness of the n the second sublayers is along described multiple
The stacking direction for closing structure successively reduces.
4. epitaxial structure according to claim 1 or 2, which is characterized in that each first sublayer with a thickness of 100 angstroms
~1000 angstroms, each second sublayer with a thickness of 100 angstroms~500 angstroms.
5. epitaxial structure according to claim 1 or 2, which is characterized in that 3≤n≤7.
6. epitaxial structure according to claim 1 or 2, which is characterized in that the epitaxial structure further includes stress release layer,
The stress release layer is arranged between the n type semiconductor layer and the active layer；The stress release layer includes successively layer
Folded superlattice structure and single layer structure；The superlattice structure includes (m+1) a third sublayer and m the 4th sublayers, and m is positive
Integer, (m+1) a third sublayer and the m the 4th alternately laminated settings of sublayer；Each third sublayer is mixed for N-type
Miscellaneous indium gallium nitrogen layer, each 4th sublayer are the gallium nitride layer of n-type doping；The single layer structure is the nitridation that do not adulterate
Gallium layer.
7. a kind of manufacturing method of the epitaxial structure of light emitting diode, which is characterized in that the manufacturing method includes：
One substrate is provided；
Composite construction, nitride buffer layer, undoped gallium nitride layer, n type semiconductor layer, active is sequentially formed over the substrate
Layer and p type semiconductor layer；
Wherein, the composite construction includes (n+1) a first sublayer and n the second sublayers, and n is positive integer, (n+1) a the
One sublayer and the n alternately laminated settings of the second sublayer；Each first sublayer is aln layer, each second son
Layer is alumina layer.
8. manufacturing method according to claim 7, which is characterized in that temperature when (n+1) a first sublayer is formed
Stacking direction along the composite construction successively increases.
9. manufacturing method according to claim 7 or 8, which is characterized in that the temperature when formation of the n the second sublayers
Stacking direction along the composite construction successively reduces.
10. manufacturing method according to claim 7 or 8, which is characterized in that when (n+1) a first sublayer is formed
Pressure is equal, and the pressure when n the second sublayers are formed is equal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810401642.0A CN108847436B (en) | 2018-04-28 | 2018-04-28 | A kind of epitaxial structure and its manufacturing method of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810401642.0A CN108847436B (en) | 2018-04-28 | 2018-04-28 | A kind of epitaxial structure and its manufacturing method of light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108847436A true CN108847436A (en) | 2018-11-20 |
| CN108847436B CN108847436B (en) | 2019-10-29 |
Family
ID=64212392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810401642.0A Active CN108847436B (en) | 2018-04-28 | 2018-04-28 | A kind of epitaxial structure and its manufacturing method of light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108847436B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945863A (en) * | 2006-10-11 | 2007-04-11 | 中国科学院上海技术物理研究所 | Composite buffer layer grown on sapphire substrate and preparing method |
| TW200921936A (en) * | 2007-11-07 | 2009-05-16 | Ind Tech Res Inst | Light emitting diode and process for fabricating the same |
| CN102208338A (en) * | 2010-03-30 | 2011-10-05 | 杭州海鲸光电科技有限公司 | Sapphire-base compound substrate and manufacturing method thereof |
| US20120295428A1 (en) * | 2011-05-20 | 2012-11-22 | Yuriy Melnik | Methods for pretreatment of group iii-nitride depositions |
| CN103236477A (en) * | 2013-04-19 | 2013-08-07 | 安徽三安光电有限公司 | LED (light emitting diode) epitaxy structure and preparation method thereof |
| CN105261681A (en) * | 2015-09-08 | 2016-01-20 | 安徽三安光电有限公司 | Semiconductor element and preparation method thereof |
| US20160027938A1 (en) * | 2014-07-23 | 2016-01-28 | The Regents Of The University Of Michigan | Tetradymite Layer Assisted Heteroepitaxial Growth And Applications |
-
2018
- 2018-04-28 CN CN201810401642.0A patent/CN108847436B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945863A (en) * | 2006-10-11 | 2007-04-11 | 中国科学院上海技术物理研究所 | Composite buffer layer grown on sapphire substrate and preparing method |
| TW200921936A (en) * | 2007-11-07 | 2009-05-16 | Ind Tech Res Inst | Light emitting diode and process for fabricating the same |
| CN102208338A (en) * | 2010-03-30 | 2011-10-05 | 杭州海鲸光电科技有限公司 | Sapphire-base compound substrate and manufacturing method thereof |
| US20120295428A1 (en) * | 2011-05-20 | 2012-11-22 | Yuriy Melnik | Methods for pretreatment of group iii-nitride depositions |
| CN103236477A (en) * | 2013-04-19 | 2013-08-07 | 安徽三安光电有限公司 | LED (light emitting diode) epitaxy structure and preparation method thereof |
| US20160027938A1 (en) * | 2014-07-23 | 2016-01-28 | The Regents Of The University Of Michigan | Tetradymite Layer Assisted Heteroepitaxial Growth And Applications |
| CN105261681A (en) * | 2015-09-08 | 2016-01-20 | 安徽三安光电有限公司 | Semiconductor element and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108847436B (en) | 2019-10-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110970533B (en) | Purple light epitaxial structure of LED flip chip and preparation method thereof | |
| CN106611808B (en) | Growth method of light-emitting diode epitaxial wafer | |
| CN105679893B (en) | LED epitaxial slice production method and LED epitaxial slice | |
| CN106449915B (en) | Growth method of light-emitting diode epitaxial wafer | |
| US20080142810A1 (en) | Self assembled controlled luminescent transparent conductive photonic crystals for light emitting devices | |
| CN106887494B (en) | Epitaxial wafer of light emitting diode and manufacturing method thereof | |
| CN108091741B (en) | A kind of growing method of LED epitaxial slice | |
| CN108461592A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN107086256B (en) | Manufacturing method of light-emitting diode epitaxial wafer | |
| CN104576852A (en) | Stress regulation method for luminous quantum wells of GaN-based LED epitaxial structure | |
| CN110265514B (en) | Growth method of light emitting diode epitaxial wafer and light emitting diode epitaxial wafer | |
| CN104465898B (en) | Growing method of light-emitting diode epitaxial wafer and light emitting diode epitaxial wafer | |
| CN106206866A (en) | Manufacturing method of light-emitting diode and light-emitting diode | |
| CN103904177A (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN108054260A (en) | Epitaxial wafer of light emitting diode and preparation method | |
| CN107887485B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN104362237B (en) | The growing method and light emitting diode of a kind of light emitting diode | |
| CN109473514A (en) | A kind of gallium nitride based LED epitaxial slice and its manufacturing method | |
| CN107068824A (en) | Epitaxial wafer of light emitting diode and manufacturing method thereof | |
| CN108075019B (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN108550676A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN109671817A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN108550668A (en) | A kind of LED epitaxial slice and preparation method thereof | |
| CN108461582B (en) | A kind of growing method and LED epitaxial slice of LED epitaxial slice | |
| CN108847436B (en) | A kind of epitaxial structure and its manufacturing method of light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |