CN108828267B - Method and device for measuring wafer warping degree - Google Patents
Method and device for measuring wafer warping degree Download PDFInfo
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- CN108828267B CN108828267B CN201810226325.XA CN201810226325A CN108828267B CN 108828267 B CN108828267 B CN 108828267B CN 201810226325 A CN201810226325 A CN 201810226325A CN 108828267 B CN108828267 B CN 108828267B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/30—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring roughness or irregularity of surfaces
Abstract
The invention provides a device and a method for measuring the warping degree of a wafer, and belongs to the technical field of wafer detection. The measuring device comprises a probe group, a probe group and a measuring device, wherein the probe group comprises an upper surface probe and a lower surface probe, the upper surface probe and the lower surface probe are respectively positioned above the wafer, and the lower surface probe is positioned below the wafer and is used for moving and scanning the upper surface and the lower surface of the wafer along the diameter of the wafer in a moving direction parallel to the reference surface of the wafer; the bearing mechanism is used for bearing the wafer, and the upper surface of the bearing mechanism is contacted with the lower surface of the wafer; and a rotating mechanism which is positioned above the wafer and can rotate the wafer. The scheme improves the measurement precision of wafer detection and reduces measurement errors.
Description
Technical Field
The invention relates to the technical field of wafer detection, in particular to a method and a device for measuring the warping degree of a wafer.
Background
In chip manufacturing, the substrate material is generally a wafer (silicon wafer), and the current mainstream wafer size is 300mm in diameter. In the manufacturing process of the 3D NAND memory chip, tens of hundreds of films need to be stacked and deposited on the surface of a wafer, and the wafer can be warped to different degrees due to the stress imbalance between the films. The warpage of the wafer directly causes the reduction of the pattern registration precision among different films, and an effective device function cannot be formed, so that the warpage of the wafer needs to be detected. The existing wafer warpage measuring method is a laser focusing based measuring method, however, the method has the following disadvantages: the surface of the wafer cannot be measured when the pattern exists; the laser focusing distance measurement precision is not high, and the wafer warpage deformation cannot be measured when being small; when the wafer deposition film is thick and the deposition is not uniform, measurement errors are easily caused.
Disclosure of Invention
In order to overcome the problems in the prior art, the invention provides a method and a device for measuring the warpage degree of a wafer, which are used for synchronously measuring the warpage degrees of the upper surface and the lower surface of the wafer through an upper atomic force probe and a lower atomic force probe, thereby greatly reducing the measurement error and improving the measurement precision.
In order to achieve the above object, the present invention provides a device for measuring a wafer warpage level, which includes a probe set including an upper surface probe and a lower surface probe, wherein the upper surface probe and the lower surface probe are respectively located above a wafer, and the lower surface probe is located below the wafer, and is used for performing a moving scan on the upper surface and the lower surface of the wafer along a diameter of the wafer in a moving direction parallel to a reference plane of the wafer; the bearing mechanism is used for bearing the wafer, and the upper surface of the bearing mechanism is contacted with the lower surface of the wafer; and a rotating mechanism which is positioned above the wafer and can rotate the wafer.
According to one aspect of the invention, the distance between the reference surface and the upper surface of the bearing mechanism is half of the thickness of the wafer, and the upper surface probe and the lower surface probe are always in vertically symmetrical positions of the reference surface.
According to one aspect of the invention, the carrying mechanism is provided with a through groove, when the wafer is placed on the carrying mechanism, the through groove is coincident with the diameter of the wafer, and the lower surface probe can pass through the through groove and detect the lower surface of the wafer along the through groove.
According to one aspect of the invention, the rotating mechanism comprises a vertical rotating shaft and a horizontal sucker connected below the rotating shaft, the rotating mechanism can move downwards to enable the sucker of the rotating mechanism to suck a wafer, and then the rotating shaft of the rotating mechanism rotates to enable the wafer to rotate around the center of the wafer.
According to one aspect of the invention, the reference plane is a horizontal plane.
According to one aspect of the invention, the measuring device further comprises a driving mechanism, wherein the driving mechanism comprises a first driving mechanism and a second driving mechanism, the first driving mechanism is used for driving the upper surface probe and the lower surface probe to perform moving scanning on the upper surface and the lower surface of the wafer along the diameter of the wafer; the second driving mechanism is used for driving the rotating mechanism to move up and down and driving the rotating shaft of the rotating mechanism to rotate.
According to one aspect of the invention, the upper surface probe and/or the lower surface probe is an atomic force probe.
The invention also provides a method for measuring the warping degree of the wafer by using the measuring device, which comprises the following steps: placing the wafer on a bearing mechanism, wherein the upper surface of the bearing mechanism is contacted with the lower surface of the wafer; moving and scanning the upper surface and the lower surface of the wafer along the diameter of the wafer in a moving direction parallel to the reference surface of the wafer by using an upper surface probe positioned above the wafer and a lower surface probe positioned below the wafer, and synchronously recording morphology signals obtained by the upper surface probe and the lower surface probe; and judging the warping degree of the wafer according to the morphology signal.
According to one aspect of the invention, the method specifically comprises: moving an upper surface probe and a lower surface probe to the edge of a wafer, stopping at the symmetrical positions of the upper surface and the lower surface of the wafer, and recording an initial morphology signal as a reference; step two, the upper surface probe and the lower surface probe move along the diameter of the wafer at the same time by adopting the same scanning frequency to perform linear scanning, and synchronously recording morphology signals obtained by the upper surface probe and the lower surface probe; rotating the wafer around the center of the wafer, circularly executing the steps, and performing linear scanning for multiple times to cover the diameter directions of the multiple wafers to obtain multiple height curves of the upper surface topography and the lower surface topography so as to form the spatial distribution of the upper surface topography and the lower surface topography of the wafer; and step four, obtaining the warping degree of the wafer according to the spatial distribution of the upper surface topography and the lower surface topography of the wafer.
According to an aspect of the present invention, the obtaining the warpage of the wafer in the fourth step specifically includes: representing the warping degree of the wafer according to an average value curve of coordinates corresponding to the upper surface topography height curve and the lower surface topography height curve; and/or representing the warping degree of the wafer according to the change of the profile height curve of the lower surface of the wafer relative to the reference surface.
Therefore, according to the scheme provided by the invention, the upper surface probe and the lower surface probe are used for linearly scanning along the diameter direction of the wafer and rotating the wafer around the center of the wafer to obtain a plurality of scanning results, and the spatial distribution of the upper surface topography and the lower surface topography of the wafer is formed, so that the measurement error is greatly reduced and the measurement precision is improved.
Drawings
FIG. 1 is a schematic diagram of the present invention for measuring wafer warpage;
fig. 2 and 3 are schematic diagrams of a wafer warpage measuring apparatus according to the present invention;
fig. 4 is a flowchart of a method for measuring a wafer warpage level according to the present invention.
Detailed Description
The following description is of the preferred embodiments of the present invention and should not be taken as limiting the scope of the invention. The use of the same reference number throughout the several figures designates a like or similar element.
As shown in fig. 1-2, the apparatus for measuring the wafer warpage level includes a probe set, a carrying mechanism 201, a rotating mechanism 203, and a driving mechanism (not shown).
The carrying mechanism 201 is used for carrying the wafer 101. The upper surface of the carrier contacts the lower surface of the wafer 101.
The probe set includes a top surface probe 104 located above the wafer 101 and a bottom surface probe 105 located below the wafer 101. The upper surface probe and the lower surface probe are always in positions which are vertically symmetrical relative to a plane parallel to the upper surface of the bearing mechanism, and the upper surface probe and the lower surface probe move and scan the upper surface and the lower surface of the wafer along the diameter of the wafer in the moving direction parallel to the upper surface of the bearing mechanism.
According to a specific embodiment, the upper surface probe and the lower surface probe are atomic force probes (atomic force probes), and fig. 1 shows a specific case that the upper surface probe and the lower surface probe are always located at the top-bottom symmetrical position of the reference plane 102 of the wafer. In fig. 1, the reference plane is spaced from the upper surface of the carrier by half the thickness of the wafer, in other words, the reference plane is a plane parallel to and equidistant from the upper and lower surfaces of the wafer when the wafer is not warped. According to another embodiment, the reference plane is a horizontal plane. And the upper surface probe and the lower surface probe move and scan the upper surface and the lower surface of the wafer along the diameter of the wafer in a moving direction parallel to the reference surface of the wafer. Fig. 1 is only a specific implementation manner, and actually, the reference plane may be any plane (as described in the above paragraph) parallel to the upper surface of the supporting mechanism, as long as the wafer warpage detection can be achieved, that is, when the upper and lower surface probes are located at vertically symmetrical positions of the reference plane, there is a certain distance between the upper and lower surface probes and the upper and lower surfaces of the wafer respectively to achieve the warpage detection, and the reference plane does not need to be located right in the middle between the upper and lower surfaces of the wafer, that is, the distance from the upper surface of the supporting mechanism is half of the thickness of the wafer.
The carrier 201 has a through slot 202, when the wafer is placed on the carrier, the through slot 202 is coincident with the diameter of the wafer 101, and the lower surface probe 105 can pass through the through slot and probe the lower surface of the wafer along the through slot.
The rotation mechanism 203 is located above the wafer 101 and can rotate the wafer. The rotating mechanism comprises a vertical rotating shaft and a horizontal sucker connected below the rotating shaft. Specifically, as shown in fig. 3, the rotating mechanism can move downward to make the chuck absorb the wafer, and then the rotating shaft rotates to make the wafer rotate around the center of the wafer. The diameter of the wafer can thus be kept coincident with the through slots 202 at all times, so that the upper and lower surface probes can probe the upper and lower surfaces of the wafer along the diameter of the wafer.
The drive mechanism includes a first drive mechanism and a second drive mechanism. The first driving mechanism is used for driving the upper surface probe and the lower surface probe to move and scan the upper surface and the lower surface of the wafer along the diameter of the wafer; the second driving mechanism is used for driving the rotating mechanism to move up and down and rotate around the rotating shaft.
Referring back to fig. 1, the axis of ordinate H on the right side represents the height, the axis of abscissa X represents the wafer diameter direction, and 0 represents the origin. The ordinate axis H includes two portions, an upper surface profile height 106 and a lower surface profile height 107, wherein 108 shows an upper surface profile height curve generated by the upper surface probe 104 moving across the upper surface of the wafer along the diameter of the wafer, and 109 shows a lower surface profile height curve generated by the lower surface probe 105 moving across the lower surface of the wafer along the diameter of the wafer.
Fig. 4 is a flow chart illustrating a method for measuring a warp degree of a wafer using the apparatus shown in fig. 1-3. The method comprises the following steps:
moving an upper surface probe and a lower surface probe to the edge of a wafer, stopping at the symmetrical positions of the upper surface and the lower surface of the wafer, and recording an initial morphology signal as a reference;
step two, the upper surface probe and the lower surface probe move along the diameter of the wafer at the same time by adopting the same scanning frequency to perform linear scanning, and synchronously recording morphology signals obtained by the upper surface probe and the lower surface probe;
rotating the wafer around the center of the wafer, circularly executing the steps, and performing linear scanning for multiple times to cover the diameter directions of the multiple wafers to obtain multiple height curves of the upper surface topography and the lower surface topography so as to form the spatial distribution of the upper surface topography and the lower surface topography of the wafer;
and step four, obtaining the warping degree of the wafer according to the spatial distribution of the upper surface topography and the lower surface topography of the wafer. For example, when the surface of the wafer is a non-pattern film surface, the warpage degree of the wafer can be represented according to an average value curve of the corresponding coordinates of the profile height curves of the upper surface and the lower surface. When the pattern with large difference of the height of the topography exists on the surface of the wafer, the warping degree of the wafer can be represented according to the change of the height curve of the topography of the lower surface of the wafer relative to the reference surface. The degree of wafer warpage is an important process parameter, and generally reflects the stress variation caused by film deposition in different processes.
It should be noted that the embodiments and applications of the present invention are provided for illustrative purposes only and are not intended to limit the scope of the present invention, and those skilled in the art can freely combine, modify and apply various embodiments of the present invention in different practical applications.
Claims (6)
1. A wafer warpage level measuring apparatus, comprising:
the probe group comprises an upper surface probe and a lower surface probe, wherein the upper surface probe and the lower surface probe are respectively positioned above the wafer and below the wafer, and the probe group is used for moving and scanning the upper surface and the lower surface of the wafer along the diameter of the wafer in a moving direction parallel to the reference surface of the wafer;
the wafer positioning device comprises a bearing mechanism, a positioning mechanism and a positioning mechanism, wherein the bearing mechanism is used for bearing a wafer, the upper surface of the bearing mechanism is in contact with the lower surface of the wafer, the bearing mechanism is provided with a through groove, when the wafer is placed on the bearing mechanism, the diameter of the through groove is superposed with that of the wafer, and a probe on the lower surface can probe the lower surface of the wafer through the through groove and along the through groove;
the rotating mechanism comprises a vertical rotating shaft and a horizontal sucking disc connected below the rotating shaft, can move downwards to enable the sucking disc to adsorb the wafer, and then the rotating shaft of the rotating mechanism rotates to enable the wafer to rotate around the center of the wafer; and
the driving mechanism comprises a first driving mechanism and a second driving mechanism, wherein the first driving mechanism is used for driving the upper surface probe and the lower surface probe to move and scan the upper surface and the lower surface of the wafer along the diameter of the wafer; the second driving mechanism is used for driving the rotating mechanism to move up and down and driving the rotating shaft of the rotating mechanism to rotate.
2. The measurement device of claim 1, wherein:
the distance between the reference surface and the upper surface of the bearing mechanism is half of the thickness of the wafer, and the upper surface probe and the lower surface probe are always located at the vertically symmetrical positions of the reference surface.
3. The measurement device of claim 2, wherein:
the reference plane is a horizontal plane.
4. The measurement device of claim 1, wherein:
the upper surface probe and/or the lower surface probe are atomic force probes.
5. A method for measuring a warpage degree of a wafer, comprising:
placing the wafer on a bearing mechanism, wherein the upper surface of the bearing mechanism is in contact with the lower surface of the wafer, the bearing mechanism is provided with a through groove, when the wafer is placed on the bearing mechanism, the diameter of the through groove is superposed with that of the wafer, and a probe on the lower surface can probe the lower surface of the wafer through the through groove and along the through groove;
the method includes the following steps that an upper surface probe located above a wafer and a lower surface probe located below the wafer are used for moving and scanning the upper surface and the lower surface of the wafer along the diameter of the wafer in the moving direction parallel to the reference surface of the wafer, and morphology signals obtained by the upper surface probe and the lower surface probe are synchronously recorded, and the method specifically includes the following steps:
moving an upper surface probe and a lower surface probe to the edge of a wafer, stopping at the symmetrical positions of the upper surface and the lower surface of the wafer, and recording an initial morphology signal as a reference;
step two, the upper surface probe and the lower surface probe move along the diameter of the wafer at the same time by adopting the same scanning frequency to perform linear scanning, and synchronously recording morphology signals obtained by the upper surface probe and the lower surface probe;
rotating the wafer around the center of the wafer by a rotating mechanism positioned above the wafer, circularly executing the steps, and performing linear scanning for multiple times to cover the diameter directions of the multiple wafers to obtain multiple height curves of the upper surface topography and the lower surface topography so as to form the spatial distribution of the upper surface topography and the lower surface topography of the wafer;
and step four, obtaining the warping degree of the wafer according to the spatial distribution of the upper surface topography and the lower surface topography of the wafer.
6. The method according to claim 5, wherein the fourth step specifically comprises: representing the warping degree of the wafer according to an average value curve of coordinates corresponding to the upper surface topography height curve and the lower surface topography height curve; and/or representing the warping degree of the wafer according to the change of the profile height curve of the lower surface of the wafer relative to the reference surface.
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| CN110703068B (en) * | 2019-11-21 | 2021-01-29 | 中芯集成电路制造(绍兴)有限公司 | Wafer needle pressure testing method and device, controller and wafer tester |
| CN111336914B (en) * | 2020-03-25 | 2021-12-10 | 长江存储科技有限责任公司 | Wafer warping degree measuring device and method |
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