CN108807653B - Method for preparing conductive through hole of ceramic substrate - Google Patents
Method for preparing conductive through hole of ceramic substrate Download PDFInfo
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- CN108807653B CN108807653B CN201810381193.8A CN201810381193A CN108807653B CN 108807653 B CN108807653 B CN 108807653B CN 201810381193 A CN201810381193 A CN 201810381193A CN 108807653 B CN108807653 B CN 108807653B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The application relates to the field of LED packaging, and particularly discloses a preparation method of a ceramic substrate conductive through hole, which comprises the following steps: step (1), punching a conductive through hole on a ceramic substrate plated with copper on one side by adopting laser; and (2) uniformly coating copper on the side wall of the conductive through hole to form a conductive layer, and fusing the conductive layer with the copper coating on the side surface of the ceramic substrate. The conducting layer covers the side wall of the conducting through hole and does not fill the conducting through hole completely, so that the LED lamp can radiate heat outwards through the conducting through hole to enhance the radiating performance.
Description
Technical Field
The invention relates to the field of LED packaging, in particular to a preparation method of a ceramic substrate conductive through hole.
Background
With the increasing demand of LED lighting, the issue of heat dissipation of high power LEDs is emphasized, and if the heat generated by the operation of LEDs cannot be dissipated effectively, the temperature of the junction of LEDs will be too high, which not only causes the rapid attenuation of the light emitting efficiency of LEDs, but also may cause fatal influence on the life of LEDs.
At present, ceramic substrates are mainly used as high-power LED radiating substrates, and the high-power ceramic substrates which are used more in the market mainly comprise LTCC (low temperature co-fired ceramic) and DPC (direct copper-plated ceramic).
The main production process of the LTCC substrate for the LED comprises the following steps: preparing materials, pulping, casting, cutting, punching, filling holes, silk-screen printing, laminating, prepressing, degreasing, sintering and electroplating; the main components of the ceramic material are about 40% -50% of alumina powder, about 30% -50% of glass material and organic binder. The annular reflecting cup has the advantages that the annular reflecting cup with various shapes can be manufactured according to the requirements of customers; the defect is that the material has low heat conductivity coefficient which is only 2-3W/mK, but the heat conductivity coefficient can reach more than 100W/mK by adding the heat conducting silver column, and the shrinkage rate is difficult to control when the LTCC material is sintered, so that the dimensional accuracy of the whole circuit of the substrate is not high (the error is about +/-3 percent), the eutectic/flip chip process requirement with extremely high alignment accuracy requirement cannot be met, and in addition, the LTCC technology has the characteristics of high equipment cost, complex production process and low yield.
The DPC substrate for the LED is mainly produced by the following steps: pre-processing a ceramic substrate, sputtering a copper layer, coating photoresist, exposing, developing, etching, removing a film, and electroplating/chemical plating; the material used is 96% alumina or aluminum nitride. Its advantages are high size precision (less than +/-1%), and high surface smoothness (less than 0.3 microns); the defects are that the equipment cost is very high, the thermal conductivity coefficient of the aluminum oxide material is only 17-23W/m.K, while the thermal conductivity coefficient of the aluminum nitride can reach 160-200W/m.K, but the price is several times of that of the aluminum oxide, in addition, the good product rate is reduced because the conductive through hole is filled in an electroplating way, and the production processes of etching, electroplating and the like cause great environmental pollution and are not suitable for popularization.
Therefore, how to stably, efficiently and environmentally produce a ceramic heat dissipation substrate for an LED with high power, low cost and high adhesion by using lower-cost production equipment has been a continuous research goal. In addition, after the LED lamp is turned on, the back surface of the LED lamp still has more heat dissipation, at present, the heat dissipation of the back surface of the LED lamp mainly transfers heat outwards while conducting electricity through the copper layer in the conductive through hole, but the copper layer fills up the conductive through hole, so that the contact area between the copper layer and the air is smaller, and the thermal conductivity of the ceramic substrate is low, thereby resulting in poor heat dissipation effect of the LED lamp.
Disclosure of Invention
The invention aims to provide a preparation method of a ceramic substrate conductive through hole capable of enhancing heat dissipation of an LED lamp.
In order to achieve the above purpose, the basic scheme of the invention is as follows:
the preparation method of the conductive through hole of the ceramic substrate comprises the following steps:
step (1), punching a conductive through hole on a ceramic substrate plated with copper on one side by adopting laser;
and (2) uniformly coating copper on the side wall of the conductive through hole to form a conductive layer, and fusing the conductive layer with the copper coating on the side surface of the ceramic substrate.
The principle of the preparation method of the conductive hole of the ceramic substrate is as follows:
the side wall of the conductive through hole is coated with copper to form a conductive layer, one end of the conductive layer is fused with the copper plating on one side of the ceramic substrate, the other end of the conductive layer is connected with the LED lamp, a circuit is etched on the copper plating on the side face of the ceramic substrate, and current can be transmitted to the LED lamp through the copper plating and the conductive layer.
In addition, the conducting layer covers the side wall of the conducting through hole and does not completely fill the conducting through hole, so that the LED lamp can radiate heat outwards through the conducting through hole to enhance the radiating performance.
The first preferred scheme is as follows: and (3) as a further optimization of the basic scheme, the step (1) adopts picosecond laser, carbon dioxide laser or ultraviolet laser to punch the conductive through hole. By adopting laser drilling, the side wall of the conductive through hole can be smooth, and the copper can be uniformly coated on the side wall of the conductive through hole.
The preferred scheme II is as follows: as a further optimization of the first preferred scheme, the diameter of the conductive through hole is controlled to be 0.06-0.2 mm. Since the conductive through hole is formed by laser, if the diameter of the conductive through hole is too large, the energy of the laser and the time for the laser to penetrate through the ceramic substrate need to be increased, so that the diameter of the conductive through hole is not convenient to control accurately; when the diameter of the conductive through hole is too small, the finally formed conductive layer cannot bear the current leading to the LED lamp.
The preferable scheme is three: as a further optimization of the second preferred embodiment, the step (2) of forming the conductive layer includes the steps of: (a) filling copper paste into the conductive through hole, and (b) sintering and solidifying the copper paste at high temperature. The diameter of the conductive through hole is controlled to be 0.06-0.2mm, so that the space in the conductive through hole is small, the conductive through hole is difficult to fill by copper slurry filled into the conductive through hole, and the copper slurry is uniformly distributed on the side wall of the conductive through hole due to the attraction of the side wall of the conductive through hole to the copper slurry, and the conductive through hole can be prevented from being plugged by the copper slurry. And sintering at high temperature to solidify and attach the copper paste to the side wall of the conductive through hole.
The preferable scheme is four: as a further optimization of the third preferred embodiment, in the step (b) of the step (2), the temperature of the high-temperature sintering is 900-. The sintering temperature is controlled at 900-1100 ℃, so that the thickness of the conductive layer is uniform, the conductive layer and the side wall of the conductive through hole have high adhesiveness, and the conductive layer is prevented from falling off.
The preferable scheme is five: as a further optimization of the second preferred embodiment, the step (2) is to form the conductive layer by electroplating. The conductive layer is coated on the side wall of the conductive through hole in an electroplating mode, so that the conductive layer can uniformly grow along the side wall of the conductive through hole, and the thickness uniformity of the conductive layer is ensured.
Drawings
FIG. 1 is a schematic structural diagram of an aperture detection apparatus in an embodiment;
fig. 2 is an enlarged view of a portion a in fig. 1.
Detailed Description
The present invention will be described in further detail below by way of specific embodiments:
reference numerals in the drawings of the specification include: the device comprises a base 10, an exhaust hole 11, a U-shaped bent pipe 12, a first infrared sensor group 13, a second infrared sensor group 14, red liquid 15, a ceramic substrate 20, a conductive through hole 21, an upper pressure plate 30, a positioning wedge surface 31, a wind post 50, a first limiting edge 51, a piston 52, a push rod 53, a spring 54, a sealing ring 55 and a second limiting edge 56.
The first embodiment is as follows:
the preparation method of the conductive through hole of the ceramic substrate comprises the following steps:
step (1):
(a) punching a conductive through hole on the ceramic substrate plated with copper on one side surface by adopting carbon dioxide laser;
(b) detecting the diameter of the conductive through hole, wherein the diameter of the conductive through hole is controlled to be 0.1mm-0.2 mm;
step (2):
(a) filling copper paste into the conductive through hole, and enabling the copper paste to be uniformly attached to the side wall of the conductive through hole;
(b) and sintering the copper slurry in the conductive through hole at high temperature, wherein the sintering temperature is controlled at 900-1100 ℃, and the conductive layer is obtained after the copper slurry is solidified.
Wherein step (b) of step (1) is performed on an aperture detection device.
As shown in fig. 1 and 2, the aperture detection device includes a base 10 and an upper pressure plate 30 slidably connected to the base 10, wherein a vertically disposed wind pillar 50 is fixed on the upper pressure plate 30, the wind pillar 50 is a vertically through cylinder, a piston 52 is disposed in the wind pillar 50, and a push rod 53 extending from the top of the wind pillar 50 is fixed on the piston 52. A first stopper rib 51 fixed to the inner wall of the wind post 50 is provided above the piston 52 to prevent the piston 52 from sliding out of the upper end of the wind post 50. A spring 54 is arranged below the piston 52, a second limit rib 56 positioned on the inner wall of the wind post 50 is arranged below the spring 54, two ends of the spring 54 respectively abut against the piston 52 and the second limit rib 56, the piston 52 is pushed downwards by the push rod 53 to compress the spring 54, so that the pressure on the push rod 53 is released, and the piston 52 is reset by the spring 54.
The lower end of the wind post 50 penetrates the upper press plate 30, and a rubber seal ring 55 is bonded to the bottom of the wind post 50. The inner diameter of the wind post 50 is larger than the diameter of the conductive through hole 21, and in the present embodiment, the inner diameter of the wind resistance is 1 mm. The base 10 is provided with an exhaust hole 11 facing the air column 50, and a seal ring 55 provided on the outer periphery of the exhaust hole 11 is bonded to the upper surface of the base 10. The exhaust hole 11 is a taper hole, namely the diameter of the upper end of the exhaust hole 11 is smaller than that of the lower end of the exhaust hole 11; and the diameter of the upper end of the exhaust hole 11 is larger than that of the conductive through hole 21, and in the present embodiment, the diameter of the upper end of the exhaust hole 11 is set to 0.5 mm.
A U-shaped bent pipe 12 is fixed on the base 10, one end of the U-shaped bent pipe 12 is connected to the lower end of the wind column 50 through a corrugated pipe, and the corrugated pipe communicates the inner cavity of the wind column 50 with the U-shaped bent pipe 12; the other end of the U-shaped bent pipe 12 is communicated with the exhaust hole 11, and the communicating part of the U-shaped bent pipe 12 and the exhaust pipe is arranged at the small end of the exhaust hole 11. The U-shaped elbow 12 is filled with red liquid 15, and the base 10 is provided with two groups of infrared sensors which comprise an emitter and a receiver. Two sets of infrared sensor groups are respectively located the both sides of U type return bend 12, from when the transmitter sends the signal, the signal that sends need only pass UU type return bend 12 and can be received by the receiver. When the U-bend 12 through which the signal from the transmitter passes is filled with the red liquid 15, the signal strength is greatly attenuated, and the signal received by the receiver is weak. The two groups of infrared sensors are respectively a first infrared sensor group 13 and a second infrared sensor group 14, and the first infrared sensor group 13 is positioned below the second infrared sensor group 14; in addition, a controller and an indicator light are arranged on the base 10, and the first infrared sensor group 13, the second infrared sensor group 14 and the indicator light are electrically connected with the controller.
A positioning wedge surface 31 is further arranged at the edge of the lower surface of the upper pressure plate 30, and when the conductive through hole 21 on the ceramic substrate 20 is detected, the ceramic substrate 20 is placed on the base 10, so that the ceramic substrate 20 is positioned between the upper pressure plate 30 and the base 10; then the push rod 53 is pushed to move downwards, and under the action of the spring 54, the piston 52 will first push the upper press plate 30 to move downwards, so that the distance between the upper press plate 30 and the base 10 is gradually reduced. Meanwhile, the positioning wedge surface 31 of the upper platen 30 contacts the edge of the ceramic substrate 20 and applies a horizontal pressure to the ceramic substrate 20 to adjust the position of the ceramic substrate 20, thereby positioning the ceramic substrate 20. When the ceramic substrate 20 is completely pressed by the upper press plate 30 and the base 10, the centers of the conductive through hole 21, the inner cavity of the wind post 50, and the exhaust hole 11 are aligned; continuing to depress the push rod 53, the piston 52 will overcome the spring force of the spring 54 and slide downwardly within the interior chamber of the wind post 50. Due to the sealing ring 55, the inner cavity of the wind post 50, the conductive through hole 21 and the exhaust hole 11 form a communicating channel and form a venturi structure. During the downward movement of the piston 52, a downward flowing air flow is formed in the conductive through hole 21, and the flow speed of the air flow passing through the conductive through hole 21 is increased, so that the pressure in the conductive through hole 21 is reduced; and the gas in the wind column 50 is extruded, the pressure in the inner cavity of the wind column 50 is increased, a pressure difference is formed between two ends of the UU-shaped bent pipe 12, and then the red liquid 15 generates a height difference, namely the liquid level at one end of the red liquid 15 is reduced.
When the liquid level of the red liquid 15 is lowered to the first infrared sensor group 13, the signal received by the receiver of the first infrared sensor group 13 is enhanced; if the level of the red liquid 15 continues to drop to the second infrared sensor group 14, the signal received by the receiver of the second infrared sensor group 14 will increase. The first infrared sensor group 13 and the second infrared sensor group 14 both send signals to the controller, and if the signals fed back by the first infrared sensor group 13 and the second infrared sensor group 14 are both enhanced, the diameter of the conductive through hole 21 is too small, and the indicator light is red; when the signal fed back by the first infrared sensor group 13 is enhanced and the signal fed back by the second infrared sensor group 14 is unchanged, the diameter of the electric conduction is qualified, and the indicator light is turned on green; when the signals fed back by the first infrared sensor group 13 and the second infrared sensor group 14 are not changed, the diameter of the conductive through hole 21 is too large, and the indicator light is not on.
Since the conductive through hole is formed by laser, when the voltage of the laser generator fluctuates, the energy of the emitted laser changes, and if the change amount is too large, the conductive through hole is unqualified, so that the aperture of the conductive through hole needs to be detected. In this embodiment, a plurality of conductive vias 21 are formed on the same ceramic substrate 20, and the diameter of all the conductive vias 21 can be detected by the aperture detection device. And one conductive through hole 21 corresponds to one U-shaped bent pipe 12 and the indicator light, so that quality problems of the conductive through holes 21 can be specifically distinguished, and timely adjustment can be conveniently carried out.
Example two:
the second embodiment is different from the first embodiment only in that, in the second embodiment, in the step (a) of the step (1), the conductive through hole is processed by using the ultraviolet laser.
Example three:
the difference between the third embodiment and the first embodiment is only that, in the third embodiment, the step (2) is to process the conductive layer by means of copper plating by using an electroplating process.
Example four:
the difference between the fourth embodiment and the first embodiment is that the aperture detection device is not provided with the first infrared sensor group and the second infrared sensor group, but is provided with scale marks on the U-shaped bent pipe, and when the conductive through hole is detected, the size of the conductive through hole is determined by observing the position relationship between the liquid level of the red liquid and the scale marks.
The foregoing is merely an example of the present invention and common general knowledge of known specific structures and features of the embodiments is not described herein in any greater detail. It should be noted that, for those skilled in the art, without departing from the structure of the present invention, several changes and modifications can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicability of the patent. The scope of the claims of the present application shall be determined by the contents of the claims, and the description of the embodiments and the like in the specification shall be used to explain the contents of the claims.
Claims (6)
1. The preparation method of the ceramic substrate conductive through hole is characterized by comprising the following steps: the method comprises the following steps:
step (1), punching a conductive through hole on a ceramic substrate plated with copper on one side by adopting laser, and detecting the diameter of the conductive through hole;
step (2), evenly coating copper on the side wall of the conductive through hole to form a conductive layer, and fusing the conductive layer with the copper coating on the side surface of the ceramic substrate;
in the step (1), the diameter of the conductive through hole is detected on an aperture detection device;
the aperture detection device comprises a base and an upper pressure plate which is in sliding connection with the base, wherein a positioning wedge surface is further arranged at the edge of the lower surface of the upper pressure plate, a vertically arranged air column is fixed on the upper pressure plate, the air column is a cylinder body which is communicated up and down, a piston is arranged in the air column, a push rod extending out of the top of the air column is fixed on the piston, a spring which is abutted against the piston is arranged below the piston, and the lower end of the air column penetrates through the upper pressure plate; the inner diameter of the air column is larger than the diameter of the conductive through hole, the base is provided with an exhaust hole opposite to the air column, the exhaust hole is a taper hole, the diameter of the upper end of the exhaust hole is smaller than that of the lower end of the exhaust hole, and the diameter of the upper end of the exhaust hole is larger than that of the conductive through hole; the base is fixedly provided with a U-shaped bent pipe, one end of the U-shaped bent pipe is used for communicating the lower part of the inner cavity of the wind column with the U-shaped bent pipe through a corrugated pipe, the other end of the U-shaped bent pipe is communicated with the small end of the exhaust hole, red liquid is filled in the U-shaped bent pipe, the base is provided with two groups of infrared sensors, each group of infrared sensors comprises a transmitter and a receiver, the two groups of infrared sensors are respectively a first infrared sensor group and a second infrared sensor group, and the first infrared sensor group is positioned above the second infrared sensor group; the base is provided with a controller and an indicator light, and the first infrared sensor group, the second infrared sensor group and the indicator light are all electrically connected with the controller.
2. The method of preparing ceramic substrate conductive vias of claim 1, wherein: and (2) adopting picosecond laser, carbon dioxide laser or ultraviolet laser to punch the conductive through hole in the step (1).
3. The method for preparing a ceramic substrate conductive via according to claim 2, wherein: the diameter of the conductive through hole is controlled to be 0.06-0.2 mm.
4. The method of preparing ceramic substrate conductive vias of claim 3, wherein: the step (2) of forming the conductive layer comprises the following steps: (a) filling copper paste into the conductive through hole, and (b) sintering and solidifying the copper paste at high temperature.
5. The method for preparing ceramic substrate conductive via according to claim 4, wherein: in the step (b) of the step (2), the temperature of the high-temperature sintering is 900-1100 ℃.
6. The method of preparing ceramic substrate conductive vias of claim 3, wherein: the step (2) forms a conductive layer by electroplating.
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| CN201810381193.8A CN108807653B (en) | 2018-04-25 | 2018-04-25 | Method for preparing conductive through hole of ceramic substrate |
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| CN201810381193.8A CN108807653B (en) | 2018-04-25 | 2018-04-25 | Method for preparing conductive through hole of ceramic substrate |
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| CN108807653B true CN108807653B (en) | 2020-02-21 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103052280A (en) * | 2011-10-11 | 2013-04-17 | 光颉科技股份有限公司 | Method for manufacturing substrate with conductive through hole |
| CN104638097A (en) * | 2015-02-05 | 2015-05-20 | 中国科学院半导体研究所 | Manufacturing method of red-light LED (Light-Emitting Diode) flip chip |
| CN106034379A (en) * | 2015-03-20 | 2016-10-19 | 富葵精密组件(深圳)有限公司 | Circuit board and manufacturing method thereof |
| CN106358369A (en) * | 2015-07-15 | 2017-01-25 | 富葵精密组件(深圳)有限公司 | Circuit board and manufacturing method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201281590Y (en) * | 2008-10-09 | 2009-07-29 | 东山县康力电池隔板有限公司 | Maximum hole diameter detection device for battery separator |
| CN101586952B (en) * | 2009-04-07 | 2011-01-05 | 王乃明 | Hole diameter detection apparatus and method |
| CN201983765U (en) * | 2011-01-24 | 2011-09-21 | 福达轴承集团福莱特精工科技有限公司 | Aperture detection device |
| CN103308126B (en) * | 2013-06-13 | 2015-06-17 | 金陵科技学院 | Quick detection device for aperture restrictor, and detection method thereof |
| CN205300554U (en) * | 2015-04-10 | 2016-06-08 | 苏州迈星机床有限公司 | Aperture check out test set |
| TWM523852U (en) * | 2016-01-07 | 2016-06-11 | Parts Prec Corp | Aperture detection system |
-
2018
- 2018-04-25 CN CN201810381193.8A patent/CN108807653B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103052280A (en) * | 2011-10-11 | 2013-04-17 | 光颉科技股份有限公司 | Method for manufacturing substrate with conductive through hole |
| CN104638097A (en) * | 2015-02-05 | 2015-05-20 | 中国科学院半导体研究所 | Manufacturing method of red-light LED (Light-Emitting Diode) flip chip |
| CN106034379A (en) * | 2015-03-20 | 2016-10-19 | 富葵精密组件(深圳)有限公司 | Circuit board and manufacturing method thereof |
| CN106358369A (en) * | 2015-07-15 | 2017-01-25 | 富葵精密组件(深圳)有限公司 | Circuit board and manufacturing method thereof |
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