CN108807292A - A kind of intelligent power module and its manufacturing method - Google Patents
A kind of intelligent power module and its manufacturing method Download PDFInfo
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- CN108807292A CN108807292A CN201810618254.8A CN201810618254A CN108807292A CN 108807292 A CN108807292 A CN 108807292A CN 201810618254 A CN201810618254 A CN 201810618254A CN 108807292 A CN108807292 A CN 108807292A
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- layer
- parts
- power module
- resin plate
- resin
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000011347 resin Substances 0.000 claims abstract description 90
- 229920005989 resin Polymers 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 150000001875 compounds Chemical class 0.000 claims abstract description 51
- 238000007789 sealing Methods 0.000 claims abstract description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims description 12
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229920002379 silicone rubber Polymers 0.000 claims description 11
- 239000004417 polycarbonate Substances 0.000 claims description 10
- 229920000515 polycarbonate Polymers 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 claims description 5
- 229920001971 elastomer Polymers 0.000 claims description 5
- 150000002148 esters Chemical class 0.000 claims description 5
- 239000003365 glass fiber Substances 0.000 claims description 5
- -1 phenyl ester Chemical class 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 125000005605 benzo group Chemical group 0.000 claims description 3
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims description 3
- 150000003852 triazoles Chemical class 0.000 claims description 3
- 239000002131 composite material Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HVLLSGMXQDNUAL-UHFFFAOYSA-N triphenyl phosphite Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)OC1=CC=CC=C1 HVLLSGMXQDNUAL-UHFFFAOYSA-N 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 101150032902 PET20 gene Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
Abstract
The present invention provides a kind of intelligent power module and its manufacturing method, the manufacturing method of the intelligent power module includes the following steps：Form compound resin plate, multiple strip grooves arranged in parallel are formed in the compound resin plate, and embedded bullion block, then in the surface binding metal substrate and silicon carbide insulating layer of the compound resin plate, then circuit-wiring layer is formed, multiple electronic components and multiple pins are assembled on the circuit-wiring layer, eventually form sealing layer of resin.The intelligent power module of the present invention has excellent sealing performance, anti-seismic performance, heat conductivility and stability, increases its service life.
Description
Technical field
The present invention relates to semiconductor power device encapsulation technology fields, more particularly to a kind of intelligent power module and its system
Make method.
Background technology
Intelligent power module (Intelligent Power Module, IPM) is a kind of advanced device for power switching, tool
There are GTR (high power transistor) high current density, low saturation voltage and high voltage bearing advantage, and MOSFET (field effect transistors
Pipe) high input impedance, high switching frequency and the advantages of low driving power.Existing intelligent power module is made frequently with metal material
For substrate, insulating layer and circuit-wiring layer, and installation power element and control element on circuit-wiring layer are formed on substrate,
Then resin seal layer package substrate, insulating layer, circuit-wiring layer, power component and control element are used.Existing intelligence work(
The manufacturing cost of rate module is high and therefore how heavier mass designs a kind of intelligent power module of excellent combination property, be industry
Boundary's urgent problem to be solved.
Invention content
The purpose of the present invention is overcoming above-mentioned the deficiencies in the prior art, a kind of intelligent power module and its manufacturer are provided
Method.
To achieve the above object, the manufacturing method of a kind of intelligent power module proposed by the present invention, includes the following steps：
1）The first pet layer is bonded in the upper surface of the first Polycarbonate Layer, the first silicon is bonded in the upper surface of first pet layer
Rubber layer, the second pet layer is bonded in the upper surface of first silastic-layer, and the is bonded in the upper surface of second pet layer
Two silastic-layers bond third pet layer in the upper surface of second silicon rubber, are bonded in the upper surface of the third pet layer
ABS resin layer, to form compound resin plate；
2）Multiple strip grooves arranged in parallel are formed in the compound resin plate, the strip groove runs through the compound tree
Fat plate, then in each strip groove be embedded in a bullion block, the top surface of the metal derby with it is described multiple
The upper surface flush of resin plate, the bottom surface of the metal derby are flushed with the lower surface of the compound resin plate；
3）Then a metal substrate is bonded in the lower surface of the compound resin plate, then in the upper surface of the compound resin plate
Silicon carbide insulating layer is formed by PECVD, the thickness of the silicon carbide insulating layer is 50-100 microns, multiple bar shaped gold
Belong to block and forms a plurality of thermal conducting path between the metal substrate and the silicon carbide insulating layer；
4）Deposit a conductive metal layer on the silicon carbide insulating layer, and to the conductive metal layer carry out patterned process with
A circuit-wiring layer is formed, the thickness of the conductive metal layer is 0.5-3 microns；
5）Multiple electronic components and multiple pins are assembled on the circuit-wiring layer, the electronic component includes power
Element and control element；
6）Form sealing layer of resin, the fully wrapped around silicon carbide insulating layer of the sealing layer of resin, the circuit-wiring layer, institute
Electronic component, the upper surface of the composite panel of plastic material and side surface and the upper surface and side surface of the metal substrate are stated,
The lower surface of the metal substrate is exposed to the sealing layer of resin, and the sealing layer of resin also wraps up the one of each pin
Part, and another part of each pin is exposed to the sealing layer of resin, the material of the sealing layer of resin includes poly-
30-50 parts of carbonic ester；PET20-40 parts；10-20 parts of silicon rubber；ABS10-20 parts；2- (2'- hydroxyl -5'- aminomethyl phenyls) benzo
0.1-0.5 parts of triazole；N, N,-bis- (2,2,6,6- tetramethyl -4- piperidyls) 0.3-0.8 parts of -1,6- hexamethylene diamines；Three nonyl of phosphorous acid
0.5-1 parts of base phenyl ester；1-3 parts of peroxidating -2- ethylhexyl carbonate tert-pentyl esters；0.2-0.4 parts of vinyltriacetoxy silane；
1-5 parts of glass fibre；1-3 parts of silicon carbide powder.
Preferably, the thickness of the first Polycarbonate Layer is 500-1000 microns, first, second, third pet layer
Thickness is 0.5-2 millimeters, and the thickness of first, second silastic-layer is 1-3 millimeters, and the thickness of the ABS resin layer is
400-800 microns.
Preferably, the thickness of the metal substrate is 100-200 microns.
Preferably, the width of the strip groove is 1-3 millimeters, the length of the strip groove is 10-20 millimeters, phase
Spacing between adjacent strip groove is 1-3 millimeters, and the size of the strip groove is identical as the size of bullion block.
The invention also provides a kind of intelligent power module, the intelligent power module prepares to be formed using the above method
's.
The present invention has following advantages compared with prior art：
The intelligent power module of the present invention uses compound resin plate as bearing substrate, and by slotting simultaneously in compound resin plate
Embedded bullion block bonds the metal substrate of thinner thickness, in the upper surface of compound resin plate at the back side of compound resin plate
Form silicon carbide thermally conductive insulating layer, multiple bullion blocks shape between the metal substrate and the silicon carbide insulating layer
Ensure it with excellent heat conductivility while at a plurality of thermal conducting path, the effectively weight of reduction bearing substrate.The present invention's
The setting of multilayer silastic-layer is so that compound resin plate has excellent damping performance, intelligent work(of the invention in compound resin plate
Rate module can reduce the probability of damage when colliding.The resin matrix that sealing layer of resin contains in the present invention and compound tree
Resin matrix in fat plate is consistent, so that the intelligent power module of the present invention has excellent sealing performance, Ke Yiyou
Effect avoids sealing layer of resin and compound resin plate from removing.By optimizing the concrete structure of the intelligent power module of the present invention, and it is excellent
Change the specific process parameter of each component so that intelligent power module of the invention has excellent sealing performance, anti-seismic performance, leads
Hot property and stability increase its service life.In addition, the preparation method process of the present invention is simple, production is reduced
Energy consumption is easy to industrialized production.
Description of the drawings
Fig. 1 is the schematic diagram of the intelligent power module of the present invention.
Fig. 2 is the schematic cross-section along A-B in Fig. 1.
Specific implementation mode
A kind of manufacturing method for intelligent power module that the specific embodiment of the invention proposes, includes the following steps：
1）The first pet layer is bonded in the upper surface of the first Polycarbonate Layer, the first silicon is bonded in the upper surface of first pet layer
Rubber layer, the second pet layer is bonded in the upper surface of first silastic-layer, and the is bonded in the upper surface of second pet layer
Two silastic-layers bond third pet layer in the upper surface of second silicon rubber, are bonded in the upper surface of the third pet layer
ABS resin layer, to form compound resin plate；
2）Multiple strip grooves arranged in parallel are formed in the compound resin plate, the strip groove runs through the compound tree
Fat plate, then in each strip groove be embedded in a bullion block, the top surface of the metal derby with it is described multiple
The upper surface flush of resin plate, the bottom surface of the metal derby are flushed with the lower surface of the compound resin plate；
3）Then a metal substrate is bonded in the lower surface of the compound resin plate, then in the upper surface of the compound resin plate
Silicon carbide insulating layer is formed by PECVD, the thickness of the silicon carbide insulating layer is 50-100 microns, multiple bar shaped gold
Belong to block and forms a plurality of thermal conducting path between the metal substrate and the silicon carbide insulating layer；
4）Deposit a conductive metal layer on the silicon carbide insulating layer, and to the conductive metal layer carry out patterned process with
Form a circuit-wiring layer, the thickness of the conductive metal layer is 0.5-3 micron, the material of the conductive metal layer for aluminium or
Copper；
5）Multiple electronic components and multiple pins are assembled on the circuit-wiring layer, the electronic component includes power
Element and control element；
6）Form sealing layer of resin, the fully wrapped around silicon carbide insulating layer of the sealing layer of resin, the circuit-wiring layer, institute
Electronic component, the upper surface of the composite panel of plastic material and side surface and the upper surface and side surface of the metal substrate are stated,
The lower surface of the metal substrate is exposed to the sealing layer of resin, and the sealing layer of resin also wraps up the one of each pin
Part, and another part of each pin is exposed to the sealing layer of resin, the material of the sealing layer of resin includes poly-
30-50 parts of carbonic ester；PET20-40 parts；10-20 parts of silicon rubber；ABS10-20 parts；2- (2'- hydroxyl -5'- aminomethyl phenyls) benzo
0.1-0.5 parts of triazole；N, N,-bis- (2,2,6,6- tetramethyl -4- piperidyls) 0.3-0.8 parts of -1,6- hexamethylene diamines；Three nonyl of phosphorous acid
0.5-1 parts of base phenyl ester；1-3 parts of peroxidating -2- ethylhexyl carbonate tert-pentyl esters；0.2-0.4 parts of vinyltriacetoxy silane；
1-5 parts of glass fibre；1-3 parts of silicon carbide powder.
Wherein, the thickness of the first Polycarbonate Layer is 500-1000 microns, the thickness of first, second, third pet layer
It it is 0.5-2 millimeters, the thickness of first, second silastic-layer is 1-3 millimeters, and the thickness of the ABS resin layer is 400-
800 microns.The thickness of the metal substrate is 100-200 microns.The width of the strip groove is 1-3 millimeters, the bar shaped
The length of groove is 10-20 millimeters, and the spacing between adjacent bar groove is 1-3 millimeters, the size of the strip groove and institute
The size for stating bullion block is identical.
As shown in Figs. 1-2, the intelligent power module includes compound resin plate 1, and the compound resin plate 1 includes first poly-
Basis 11, the first pet layer 12, the first silastic-layer 13, the second pet layer 14, the second silastic-layer 15, third pet layer 16
And ABS resin layer 17, multiple strip grooves 18 arranged in parallel, the strip groove are provided in the compound resin plate 1
Slot 18 runs through the compound resin plate 1, and a bullion block 2, the metal derby 2 are embedded in each strip groove 18
Top surface and the compound resin plate 1 upper surface flush, the bottom surface of the metal derby 2 and the compound resin plate 1
Lower surface flushes, and the lower surface of the compound resin plate 1 is bonded with a metal substrate 3, and the upper surface of the compound resin plate 1 is set
It is equipped with silicon carbide insulating layer 4, multiple bullion blocks 2 shape between the metal substrate 3 and the silicon carbide insulating layer 4
At a plurality of thermal conducting path, it is formed with circuit-wiring layer 5 on the silicon carbide insulating layer 4, is assembled on the circuit-wiring layer 5 multiple
Electronic component 6 and multiple pins 7, the electronic component 6 include power component and control element, the sealing layer of resin
8 fully wrapped around silicon carbide insulating layers 4, the circuit-wiring layer 5, the electronic component 6, the compound resin plate 1
Upper surface and side surface and the upper surface and side surface of the metal substrate 3, the lower surface of the metal substrate 3 are exposed to institute
Sealing layer of resin is stated, the sealing layer of resin 8 also wraps up a part for each pin 7, and each pin 7 is another
Partial denudation is in the sealing layer of resin 8.
Embodiment 1：
A kind of manufacturing method of intelligent power module, includes the following steps：
1）The first pet layer is bonded in the upper surface of the first Polycarbonate Layer, the first silicon is bonded in the upper surface of first pet layer
Rubber layer, the second pet layer is bonded in the upper surface of first silastic-layer, and the is bonded in the upper surface of second pet layer
Two silastic-layers bond third pet layer in the upper surface of second silicon rubber, are bonded in the upper surface of the third pet layer
ABS resin layer, to form compound resin plate；
2）Multiple strip grooves arranged in parallel are formed in the compound resin plate, the strip groove runs through the compound tree
Fat plate, then in each strip groove be embedded in a bullion block, the top surface of the metal derby with it is described multiple
The upper surface flush of resin plate, the bottom surface of the metal derby are flushed with the lower surface of the compound resin plate；
3）Then a metal substrate is bonded in the lower surface of the compound resin plate, then in the upper surface of the compound resin plate
Silicon carbide insulating layer is formed by PECVD, the thickness of the silicon carbide insulating layer is 80 microns, multiple bullion blocks
A plurality of thermal conducting path is formed between the metal substrate and the silicon carbide insulating layer；
4）Deposit a conductive metal layer on the silicon carbide insulating layer, and to the conductive metal layer carry out patterned process with
A circuit-wiring layer is formed, the thickness of the conductive metal layer is 2 microns, and the material of the conductive metal layer is aluminium；
5）Multiple electronic components and multiple pins are assembled on the circuit-wiring layer, the electronic component includes power
Element and control element；
6）Form sealing layer of resin, the fully wrapped around silicon carbide insulating layer of the sealing layer of resin, the circuit-wiring layer, institute
Electronic component, the upper surface of the composite panel of plastic material and side surface and the upper surface and side surface of the metal substrate are stated,
The lower surface of the metal substrate is exposed to the sealing layer of resin, and the sealing layer of resin also wraps up the one of each pin
Part, and another part of each pin is exposed to the sealing layer of resin, the material of the sealing layer of resin includes poly-
40 parts of carbonic ester；PET30 parts；15 parts of silicon rubber；ABS15 parts；2- (2'- hydroxyl -5'- aminomethyl phenyls) 0.3 part of benzotriazole；N,
N,-bis- (2,2,6,6- tetramethyl -4- piperidyls) 0.5 part of -1,6- hexamethylene diamines；0.8 part of trisnonyl phenyl phosphite；Peroxidating-
2 parts of 2- ethylhexyl carbonates tert-pentyl ester；0.3 part of vinyltriacetoxy silane；3 parts of glass fibre；2 parts of silicon carbide powder.
Wherein, the thickness of the first Polycarbonate Layer is 800 microns, and the thickness of first, second, third pet layer is 1 milli
The thickness of rice, first, second silastic-layer is 2 millimeters, and the thickness of the ABS resin layer is 600 microns.The metal
The thickness of substrate is 150 microns.The width of the strip groove is 2 millimeters, and the length of the strip groove is 15 millimeters, adjacent
Spacing between strip groove is 2 millimeters, and the size of the strip groove is identical as the size of bullion block.
Embodiment 2
A kind of manufacturing method of intelligent power module, includes the following steps：
1）The first pet layer is bonded in the upper surface of the first Polycarbonate Layer, the first silicon is bonded in the upper surface of first pet layer
Rubber layer, the second pet layer is bonded in the upper surface of first silastic-layer, and the is bonded in the upper surface of second pet layer
Two silastic-layers bond third pet layer in the upper surface of second silicon rubber, are bonded in the upper surface of the third pet layer
ABS resin layer, to form compound resin plate；
2）Multiple strip grooves arranged in parallel are formed in the compound resin plate, the strip groove runs through the compound tree
Fat plate, then in each strip groove be embedded in a bullion block, the top surface of the metal derby with it is described multiple
The upper surface flush of resin plate, the bottom surface of the metal derby are flushed with the lower surface of the compound resin plate；
3）Then a metal substrate is bonded in the lower surface of the compound resin plate, then in the upper surface of the compound resin plate
Silicon carbide insulating layer is formed by PECVD, the thickness of the silicon carbide insulating layer is 100 microns, multiple bullions
Block forms a plurality of thermal conducting path between the metal substrate and the silicon carbide insulating layer；
4）Deposit a conductive metal layer on the silicon carbide insulating layer, and to the conductive metal layer carry out patterned process with
A circuit-wiring layer is formed, the thickness of the conductive metal layer is 3 microns, and the material of the conductive metal layer is copper；
5）Multiple electronic components and multiple pins are assembled on the circuit-wiring layer, the electronic component includes power
Element and control element；
6）Form sealing layer of resin, the fully wrapped around silicon carbide insulating layer of the sealing layer of resin, the circuit-wiring layer, institute
Electronic component, the upper surface of the composite panel of plastic material and side surface and the upper surface and side surface of the metal substrate are stated,
The lower surface of the metal substrate is exposed to the sealing layer of resin, and the sealing layer of resin also wraps up the one of each pin
Part, and another part of each pin is exposed to the sealing layer of resin, the material of the sealing layer of resin includes poly-
50 parts of carbonic ester；PET20 parts；10 parts of silicon rubber；ABS20 parts；2- (2'- hydroxyl -5'- aminomethyl phenyls) 0.5 part of benzotriazole；N,
N,-bis- (2,2,6,6- tetramethyl -4- piperidyls) 0.8 part of -1,6- hexamethylene diamines；0.5 part of trisnonyl phenyl phosphite；Peroxidating-
1 part of 2- ethylhexyl carbonates tert-pentyl ester；0.2 part of vinyltriacetoxy silane；5 parts of glass fibre；3 parts of silicon carbide powder.
Wherein, the thickness of the first Polycarbonate Layer is 1000 microns, and the thickness of first, second, third pet layer is 2
The thickness of millimeter, first, second silastic-layer is 3 millimeters, and the thickness of the ABS resin layer is 800 microns.The gold
The thickness for belonging to substrate is 200 microns.The width of the strip groove is 3 millimeters, and the length of the strip groove is 20 millimeters, phase
Spacing between adjacent strip groove is 3 millimeters, and the size of the strip groove is identical as the size of bullion block.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (5)
1. a kind of manufacturing method of intelligent power module, it is characterised in that：Include the following steps：
1）The first pet layer is bonded in the upper surface of the first Polycarbonate Layer, the first silicon is bonded in the upper surface of first pet layer
Rubber layer, the second pet layer is bonded in the upper surface of first silastic-layer, and the is bonded in the upper surface of second pet layer
Two silastic-layers bond third pet layer in the upper surface of second silicon rubber, are bonded in the upper surface of the third pet layer
ABS resin layer, to form compound resin plate；
2）Multiple strip grooves arranged in parallel are formed in the compound resin plate, the strip groove runs through the compound tree
Fat plate, then in each strip groove be embedded in a bullion block, the top surface of the metal derby with it is described multiple
The upper surface flush of resin plate, the bottom surface of the metal derby are flushed with the lower surface of the compound resin plate；
3）Then a metal substrate is bonded in the lower surface of the compound resin plate, then in the upper surface of the compound resin plate
Silicon carbide insulating layer is formed by PECVD, the thickness of the silicon carbide insulating layer is 50-100 microns, multiple bar shaped gold
Belong to block and forms a plurality of thermal conducting path between the metal substrate and the silicon carbide insulating layer；
4）Deposit a conductive metal layer on the silicon carbide insulating layer, and to the conductive metal layer carry out patterned process with
A circuit-wiring layer is formed, the thickness of the conductive metal layer is 0.5-3 microns；
5）Multiple electronic components and multiple pins are assembled on the circuit-wiring layer, the electronic component includes power
Element and control element；
6）Form sealing layer of resin, the fully wrapped around silicon carbide insulating layer of the sealing layer of resin, the circuit-wiring layer, institute
Electronic component, the upper surface of the compound resin plate and side surface and the upper surface and side surface of the metal substrate are stated,
The lower surface of the metal substrate is exposed to the sealing layer of resin, and the sealing layer of resin also wraps up the one of each pin
Part, and another part of each pin is exposed to the sealing layer of resin, the material of the sealing layer of resin includes poly-
30-50 parts of carbonic ester；PET20-40 parts；10-20 parts of silicon rubber；ABS10-20 parts；2- (2'- hydroxyl -5'- aminomethyl phenyls) benzo
0.1-0.5 parts of triazole；N, N,-bis- (2,2,6,6- tetramethyl -4- piperidyls) 0.3-0.8 parts of -1,6- hexamethylene diamines；Three nonyl of phosphorous acid
0.5-1 parts of base phenyl ester；1-3 parts of peroxidating -2- ethylhexyl carbonate tert-pentyl esters；0.2-0.4 parts of vinyltriacetoxy silane；
1-5 parts of glass fibre；1-3 parts of silicon carbide powder.
2. the manufacturing method of intelligent power module according to claim 1, it is characterised in that：The thickness of first Polycarbonate Layer
Degree is 500-1000 microns, and the thickness of first, second, third pet layer is 0.5-2 millimeters, first, second silicon rubber
The thickness of layer is 1-3 millimeters, and the thickness of the ABS resin layer is 400-800 microns.
3. the manufacturing method of intelligent power module according to claim 3, it is characterised in that：The thickness of the metal substrate
It is 100-200 microns.
4. the manufacturing method of intelligent power module according to claim 1, it is characterised in that：The width of the strip groove
It it is 1-3 millimeters, the length of the strip groove is 10-20 millimeters, and the spacing between adjacent bar groove is 1-3 millimeters, described
The size of strip groove is identical as the size of bullion block.
5. a kind of intelligent power module, which is characterized in that the intelligent power module uses claim 1-4 any one of them
Prepared by method to form.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546871A (en) * | 2018-12-29 | 2019-03-29 | 广东美的制冷设备有限公司 | Power integration module and its manufacturing method for air conditioner |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101082414A (en) * | 2006-05-30 | 2007-12-05 | 新灯源科技有限公司 | Luminous diode lighting appararatus with high power and high heat sinking efficiency |
| CN102651944A (en) * | 2011-02-22 | 2012-08-29 | 矢崎总业株式会社 | Wiring board and manufacturing method thereof |
| JP2012227358A (en) * | 2011-04-20 | 2012-11-15 | Toyota Central R&D Labs Inc | Semiconductor module |
| CN104113978A (en) * | 2013-08-23 | 2014-10-22 | 广东美的制冷设备有限公司 | Aluminum-based circuit board and preparation method thereof, and electronic component full packaging |
| CN106024651A (en) * | 2016-07-29 | 2016-10-12 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN107301979A (en) * | 2017-06-21 | 2017-10-27 | 广东美的制冷设备有限公司 | SPM and the air conditioner with it |
-
2018
- 2018-06-15 CN CN201810618254.8A patent/CN108807292B8/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101082414A (en) * | 2006-05-30 | 2007-12-05 | 新灯源科技有限公司 | Luminous diode lighting appararatus with high power and high heat sinking efficiency |
| CN102651944A (en) * | 2011-02-22 | 2012-08-29 | 矢崎总业株式会社 | Wiring board and manufacturing method thereof |
| JP2012227358A (en) * | 2011-04-20 | 2012-11-15 | Toyota Central R&D Labs Inc | Semiconductor module |
| CN104113978A (en) * | 2013-08-23 | 2014-10-22 | 广东美的制冷设备有限公司 | Aluminum-based circuit board and preparation method thereof, and electronic component full packaging |
| CN106024651A (en) * | 2016-07-29 | 2016-10-12 | 广东美的制冷设备有限公司 | Intelligent power module and manufacturing method thereof |
| CN107301979A (en) * | 2017-06-21 | 2017-10-27 | 广东美的制冷设备有限公司 | SPM and the air conditioner with it |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546871A (en) * | 2018-12-29 | 2019-03-29 | 广东美的制冷设备有限公司 | Power integration module and its manufacturing method for air conditioner |
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| CN108807292B8 (en) | 2020-01-14 |
| CN108807292B (en) | 2019-11-01 |
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Effective date of registration: 20191015 Address after: 226300 Southern District of Tongzhou District Industrial Park, Tongzhou District, Nantong, Jiangsu Applicant after: Nantong Hongtu Health Technology Co.,Ltd. Address before: 226600 169 Li Fa FA Road, Chengdong Town, Haian City, Nantong, Jiangsu. Applicant before: Nantong Ji Zhi Intellectual Property Service Co.,Ltd. |
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Correction item: Patentee|Address|Patent agency|Agent Correct: Nantong Hongtu Health Technology Co.,Ltd.|226300 Southern District of Tongzhou District Industrial Park, Tongzhou District, Nantong, Jiangsu|Hangzhou Jubang Intellectual Property Agency Co., ltd.33269|Zhou Meifeng False: Nantong Ji Zhi Intellectual Property Service Co.,Ltd.|226600 169 Li Fa FA Road, Chengdong Town, Haian City, Nantong, Jiangsu.|None Number: 44-02 Page: The title page Volume: 35 Correction item: Patentee|Address|Patent agency|Agent Correct: Nantong Hongtu Health Technology Co.,Ltd.|226300 Southern District of Tongzhou District Industrial Park, Tongzhou District, Nantong, Jiangsu|Hangzhou Jubang Intellectual Property Agency Co., ltd.33269|Zhou Meifeng False: Nantong Ji Zhi Intellectual Property Service Co.,Ltd.|226600 169 Li Fa FA Road, Chengdong Town, Haian City, Nantong, Jiangsu.|None Number: 44-02 Volume: 35 |
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Denomination of invention: An intelligent power module and its manufacturing method Effective date of registration: 20231020 Granted publication date: 20191101 Pledgee: Nantong Jiangsu rural commercial bank Limited by Share Ltd. Pledgor: Nantong Hongtu Health Technology Co.,Ltd. Registration number: Y2023980061700 |