CN108802434A - probe, preparation method and its application in scanning capacitance microscope - Google Patents
probe, preparation method and its application in scanning capacitance microscope Download PDFInfo
- Publication number
- CN108802434A CN108802434A CN201810215116.5A CN201810215116A CN108802434A CN 108802434 A CN108802434 A CN 108802434A CN 201810215116 A CN201810215116 A CN 201810215116A CN 108802434 A CN108802434 A CN 108802434A
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- conductive layer
- layer
- probe
- dielectric layer
- needle point
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/46—SCM [Scanning Capacitance Microscopy] or apparatus therefor, e.g. SCM probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/46—SCM [Scanning Capacitance Microscopy] or apparatus therefor, e.g. SCM probes
- G01Q60/48—Probes, their manufacture, or their related instrumentation, e.g. holders
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The present invention provides a kind of probe, preparation method and its application in Scanning capacitance microscope, the probe：One cantilever beam substrate and one needle point in the cantilever beam upper surface of substrate is set, a conductive layer is covered on the needle point, a dielectric layer is covered on the conductive layer, the conductive layer, the dielectric layer and semiconductor samples to be measured form conductor-Oxidc-Semiconductor capacitor.The advantage of the invention is that：First, simplify Scanning capacitance microscope operating process, improves the compatibility of Scanning capacitance microscope test sample；Second, probe is contacted with sample directly forms MOS capacitor, increases contribution of the capacitance signal to measurement result of dielectric layer, and novel probe provided by the invention plays an important roll Scanning capacitance microscope in the structure of detection electronic device and electric property.
Description
Technical field
It is shown the present invention relates to atomic force microscope field more particularly to a kind of probe, preparation method and its in scanning capacitance
Application in micro mirror.
Background technology
Atomic force microscope（AFM）Other than surface topography is tested, it can also be visited by atomic force microscope cantilever
The conductive films such as wire surface deposited metal carry out test analysis to the microcell electrical properties of sample surfaces micro-nano-scale.Figure 1A
It is atomic force microscope cantilever probe structural schematic diagram, Figure 1B is in atomic force microscope cantilever probe surface deposited metal film
Conducting atomic force microscopy cantilever probe structural schematic diagram.
Scanning capacitance microscope based on contact mode AFM（SCM）, it is usually used to test and obtains sample surfaces capacitance profile
Picture.Wherein, conductive pinpoint contacts to form Metal-oxide-semicondutor with the semiconductor samples of oxidation（MOS）Capacitor, metal-
Capacitance in Oxidc-Semiconductor series loop is the function of majority carrier concentration in sample.By applying friendship in the loop
Stream and Dc bias modulate carrier, cause the variation of capacitance in circuit.It is detected not by high-frequency resonance capacitance sensor again
With the variation of capacitance between the tip-sample of region, to obtain the distribution of different zones carrier type and concentration in semiconductor.
But deposit what the conventional metals films such as platinum, gold, silver and cobalt were constituted on common atomic force microscope probe
Conductive atomic force probe also has certain deficiency applied to Scanning capacitance microscope testing field.The Scanning capacitance microscope is wanted
The surface oxide layer of semiconductor samples is asked to meet the thickness of test request.This is because if semiconductor surface do not have oxide layer or
Oxide layer is relatively thin, and the interface of tip/sample is easy to form Schottky contacts (metal is in direct contact with semiconductor), and certain inclined
Under the conditions of pressure, it also will produce tunnelling current and make test crash.Therefore, it before Scanning capacitance microscope test, needs half
Conductive surface deposits certain thickness oxide layer or semiconductor samples oxide layer is waited for grow to adequate thickness naturally, this is also
Inconvenience is brought to test.
Invention content
The technical problem to be solved by the invention is to provide a kind of probe, preparation method and its in Scanning capacitance microscope
In application, can simplify the operating process of Current Scan capacitance microscopy, improve Scanning capacitance microscope test sample
Compatibility.
To solve the above-mentioned problems, the present invention provides a kind of probes for Scanning capacitance microscope, including a cantilever
Beam substrate and one needle point in the cantilever beam upper surface of substrate is set, a conductive layer is covered on the needle point, described
A dielectric layer is covered on conductive layer, the conductive layer, the dielectric layer and semiconductor samples to be measured form conductor-oxidation
Object-semiconductor capacitor.
In one embodiment, needle point described in the conductive layer covering part.
In one embodiment, conductive layer described in the dielectric layer covering part, the load of AC and DC bias are led described
In electric layer.
In one embodiment, the thickness of the dielectric layer is 1 nanometer ~ 1 micron.
In one embodiment, the dielectric layer is silica.
In one embodiment, the conductive layer also covers the part that the upper surface is exposed to except needle point.
The present invention also provides a kind of preparation methods of the above-mentioned probe for Scanning capacitance microscope, including walk as follows
Suddenly：A cantilever beam substrate is provided, a needle point is arranged in the upper surface of the cantilever beam substrate；It is conductive that one is formed on the needle point
Layer；A dielectric layer is formed on the conductive layer.
In one embodiment, the method that a dielectric layer is formed on the conductive layer includes the following steps：Coat a photoetching
Glue-line, the photoresist layer cover the cantilever beam upper surface of substrate expose portion, the needle point expose portion and the conduction
Layer；The graphical photoresist layer, exposes all or part of conductive layer；Form a dielectric layer, the dielectric layer covering exposure
Conductive layer；Photoresist layer is removed, and then dielectric layer is formed on the conductive layer.
In one embodiment, the method for the graphical photoresist layer is：Ultraviolet light by mask plate to photoresist layer into
Row exposure, then removed by the photoresist of ultraviolet light using developer solution, expose all or part of conductive layer.
The present invention also provides a kind of application of above-mentioned probe in Scanning capacitance microscope, the Scanning capacitance microscopes
Further include signal generator, capacitance sensor and lock-in amplifier, the signal generator generates AC and DC bias, and will
AC and DC bias load on the conductive layer of probe, the capacitance sensor and semiconductor samples to be measured and probe
Conductive layer connects, and capacitance signal is passed to the lock-in amplifier, and the lock-in amplifier receives the friendship of signal generator
Stream and Dc bias, and be compared with capacitance signal, to detect semiconductor samples different zones needle point and semiconductor samples
Between capacitance variation.
It is an advantage of the current invention that first, simplify Scanning capacitance microscope operating process, improves Scanning capacitance microscope and survey
The compatibility of test agent.Second, probe is contacted with sample directly forms MOS capacitor, increases the capacitance signal of dielectric layer to surveying
The contribution of result is measured, novel probe provided by the invention is for Scanning capacitance microscope in the structure and electricity for detecting electronic device
Play an important roll in performance.
Description of the drawings
Figure 1A is atomic force microscope cantilever probe structural schematic diagram；
Figure 1B is conducting atomic force microscopy cantilever probe structural schematic diagram；
Fig. 2 is structural schematic diagram of the present invention for the probe of Scanning capacitance microscope；
Fig. 3 A ~ Fig. 3 F are the process flow charts of preparation method of the present invention；
Fig. 4 is the schematic diagram of application of the probe in Scanning capacitance microscope.
Specific implementation mode
Below in conjunction with the accompanying drawings to probe provided by the invention, preparation method and its application in Scanning capacitance microscope
Specific implementation mode elaborates.
Fig. 2 is structural schematic diagram of the present invention for the probe of Scanning capacitance microscope.Referring to Fig. 2, the present invention is used for
The needle point 2 in 1 upper surface of cantilever beam substrate is arranged in the one cantilever beam substrate 1 and one of probe packet of Scanning capacitance microscope.Institute
It is the conventional use of cantilever beam substrate of existing Scanning capacitance microscope and needle point to state cantilever beam substrate 1 and the needle point 2.It is described
1 upper surface of cantilever beam substrate refers in probe face cantilever beam substrate towards the surface of test sample.
A conductive layer 3 is covered on the needle point 2.Wherein, it is traditional that platinum, gold, silver and cobalt etc. can be used in the conductive layer 3
Metal material is formed, and other conductive materials can also be used（Such as conductive diamond）It is made.In the present embodiment, the conductive layer
3 not only cover the needle point 2, can also cover the part that 1 upper surface of cantilever beam substrate is exposed to except needle point 2.?
In other embodiments, the conductive layer 3 can be with needle point 2 described in covering part, for example, the conductive layer 3 covers the needle point
Tip portion, and the part that needle point 2 is connect with the cantilever beam substrate 1 is not covered by the conductive layer 3.
A dielectric layer 4 is covered on the conductive layer 3.The dielectric layer 4 includes but not limited to silica dioxide medium layer.
Wherein, the dielectric layer 4 can be used existing mask method and be formed in 3 surface of the conductive layer.The thickness range of the dielectric layer 4
It it is 1 nanometer ~ 1 micron, for example, 5 nanometers, 10 nanometers, 50 nanometers, 100 nanometers, 500 nanometers etc..Further, the dielectric layer 4 covers
Conductive layer 3 described in cover, so that the conductive layer 3 has part surface not covered by the dielectric layer 4, for example, described lead
The part that electric layer 3 is located at 1 upper surface of cantilever beam substrate is not covered by the dielectric layer 4.It is not covered by the dielectric layer 4
Conductive layer 3 can be used in follow-up measure as electrode.For example, the signal generator for generating AC and DC bias is connected
In the conductive layer 3 not covered by the dielectric layer 4, exchanged with to be loaded between the conductive layer and semiconductor samples to be detected and
Dc bias.
The conductive layer 3, the dielectric layer 4 and semiconductor samples 5 to be measured（Please refer to Fig. 4）Form conductor-oxide-
Semiconductor capacitor.Then during actual test, it is not necessarily to sample preparation, probe of the present invention is contacted with semiconductor samples directly to be formed
Conductor-Oxidc-Semiconductor capacitor increases contribution of the capacitance signal of dielectric layer to measurement result, solution when scanning sample
Certainly because semiconductor surface does not have oxide layer or oxide layer relatively thin, the interface of tip/sample be easy to be formed Schottky contacts (conductor with
Semiconductor is in direct contact) and tunnelling current the problem of making test crash.
The present invention also provides a kind of preparation methods of above-mentioned probe.Fig. 3 A ~ Fig. 3 F are the technique of preparation method of the present invention
Flow chart.
Fig. 3 A are please referred to, a cantilever beam substrate 300 is provided, the upper table in the cantilever beam substrate 300 is arranged in a needle point 301
Face.300 upper surface of cantilever beam substrate refers in probe face cantilever beam substrate 300 towards the surface of test sample.
Wherein, the cantilever beam substrate 300 and needle point 301 are the conventional structure applied to scanning probe microscopy.
Fig. 3 B are please referred to, form a conductive layer 302 on the needle point 301.The method for forming conductive layer 302 includes but not
It is limited to physical vapour deposition (PVD), plated film etc..
A dielectric layer 304 is formed on the conductive layer 302, and then is prepared and formed the present invention for Scanning capacitance microscope
Probe.
In the present embodiment, a dielectric layer 304 is formed on the conductive layer 302, and the specific method is as follows：
Fig. 3 C are please referred to, coat a photoresist layer 303, it is sudden and violent that the photoresist layer 303 covers 300 upper surface of cantilever beam substrate
Dew part, 302 expose portion of the needle point and the conductive layer 303.Wherein, it after coating photoresist layer, then dries, removes photoetching
Solvent in glue.Coating photoresist and baking process belong to known technology, herein no longer narration in detail.In the present embodiment,
The conductive layer 303 covers whole upper surfaces of the cantilever beam substrate 300, then the photoresist layer 303 covers whole lead
Electric layer 302.
Fig. 3 D are please referred to, the graphical photoresist layer 303 exposes all or part of conductive layer 302.It is graphical described
The method of photoresist layer 303 is to be exposed to photoresist layer by mask plate using ultraviolet light, is placed into developer solution, purple
The photoresist of outer light irradiation can be removed, and expose all or part of conductive layer 302, can not quilt by the photoresist of ultraviolet light
It remains.Exposed and developed technique about photoresist belongs to known technology, herein no longer narration in detail.
Fig. 3 E are please referred to, a dielectric layer 304 is formed, the dielectric layer 304 covers the conductive layer 302 of exposure.Wherein, optional
Dielectric layer 304 is formed with chemical vapor deposition method.The dielectric layer 304 includes but not limited to silicon dioxide layer.Gas chemistry
Deposition method belongs to known technology, herein no longer narration in detail；
Fig. 3 F are please referred to, remove photoresist layer 303, and then form dielectric layer 304 on the conductive layer 302.For example, can be used
Stripper removes photoresist layer 303.
The present invention also provides a kind of application of above-mentioned probe in Scanning capacitance microscope, Fig. 4 is probe in scanning electricity
Hold the schematic diagram of the application in microscope.Referring to Fig. 4, the Scanning capacitance microscope measuring device also signal generator 6, electricity
Hold sensor 7 and lock-in amplifier 8.Conductive layer 3 on probe, dielectric layer 4 form conductor-oxide-half with semiconductor samples 5
Conductor（MOS）Capacitor.
The signal generator 6 is connect with the conductive layer 3 of the probe.The signal generator 6 generates AC and DC
Bias（AC+DC）, and by AC and DC bias load on the conductive layer 6 of probe, modulation semiconductor samples surface carries
Stream, causes the variation of capacitance in system.The capacitance sensor 7 connects with the conductive layer 3 of semiconductor samples 5 to be measured and probe
It connects, and by capacitance signal（C（Vac））Pass to the lock-in amplifier 8.The lock-in amplifier 8 receives signal generator 6
AC and DC bias, and be compared with capacitance signal, to detect 5 different zones needle point of semiconductor samples and semiconductor sample
The variation of capacitance between product（dC/dV）.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of probe for Scanning capacitance microscope, which is characterized in that including：One cantilever beam substrate and a setting are described
The needle point of cantilever beam upper surface of substrate is covered with a conductive layer on the needle point, and a medium is covered on the conductive layer
Layer, the conductive layer, the dielectric layer and semiconductor samples to be measured form conductor-Oxidc-Semiconductor capacitor.
2. the probe according to claim 1 for Scanning capacitance microscope, which is characterized in that the conductive layer covering part
Divide the needle point.
3. the probe according to claim 1 for Scanning capacitance microscope, which is characterized in that the dielectric layer covering part
The conductive layer, AC and DC bias is divided to load on the conductive layer.
4. the probe according to claim 1 for Scanning capacitance microscope, which is characterized in that the thickness of the dielectric layer
It is 1 nanometer ~ 1 micron.
5. the probe according to claim 1 for Scanning capacitance microscope, which is characterized in that the dielectric layer is dioxy
SiClx.
6. the probe according to claim 1 for Scanning capacitance microscope, which is characterized in that the conductive layer also covers
The upper surface is exposed to the part except needle point.
7. a kind of preparation method of the probe for Scanning capacitance microscope described in claim 1 ~ 6 any one, feature
It is, includes the following steps：A cantilever beam substrate is provided, a needle point is arranged in the upper surface of the cantilever beam substrate；Institute
It states and forms a conductive layer on needle point；A dielectric layer is formed on the conductive layer.
8. preparation method according to claim 7, which is characterized in that the method for forming a dielectric layer on the conductive layer
Include the following steps：A photoresist layer is coated, the photoresist layer covers the cantilever beam upper surface of substrate expose portion, institute
State needle point expose portion and the conductive layer；The graphical photoresist layer, exposes all or part of conductive layer；Form one
Dielectric layer, the conductive layer of the dielectric layer covering exposure；Photoresist layer is removed, and then dielectric layer is formed on the conductive layer.
9. preparation method according to claim 8, which is characterized in that graphically the method for the photoresist layer is：It is ultraviolet
Light is exposed photoresist layer by mask plate, then is removed by the photoresist of ultraviolet light using developer solution, exposes complete
Portion or partial electroconductive layer.
10. application of the probe described in claim 1 ~ 6 any one in Scanning capacitance microscope, which is characterized in that described
Scanning capacitance microscope further includes signal generator, capacitance sensor and lock-in amplifier, and the signal generator generates exchange
And Dc bias, and by AC and DC bias load on the conductive layer of probe, the capacitance sensor and to be measured half
The conductive layer of conductor sample and probe connects, and capacitance signal is passed to the lock-in amplifier, and the lock-in amplifier connects
The AC and DC bias of signal generator is received, and is compared with capacitance signal, to detect semiconductor samples different zones
The variation of capacitance between needle point and semiconductor samples.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810215116.5A CN108802434A (en) | 2018-03-15 | 2018-03-15 | probe, preparation method and its application in scanning capacitance microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810215116.5A CN108802434A (en) | 2018-03-15 | 2018-03-15 | probe, preparation method and its application in scanning capacitance microscope |
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| Publication Number | Publication Date |
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| CN108802434A true CN108802434A (en) | 2018-11-13 |
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| CN201810215116.5A Pending CN108802434A (en) | 2018-03-15 | 2018-03-15 | probe, preparation method and its application in scanning capacitance microscope |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109870336A (en) * | 2019-01-31 | 2019-06-11 | 长江存储科技有限责任公司 | Semiconductor test system and its test method |
| CN109916971A (en) * | 2019-04-25 | 2019-06-21 | 云南中烟工业有限责任公司 | A kind of fast non-destructive detection method of the fresh tobacco leaves moisture based on capacitor |
| CN111157767A (en) * | 2020-01-14 | 2020-05-15 | 上海新克信息技术咨询有限公司 | Scanning probe and preparation method thereof |
| CN111722075A (en) * | 2020-06-30 | 2020-09-29 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Test structure for latent track characterization of GaN-based HEMT device and characterization method |
| CN113341302A (en) * | 2021-06-30 | 2021-09-03 | 上海柯舜科技有限公司 | Semiconductor chip test bench |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109870336A (en) * | 2019-01-31 | 2019-06-11 | 长江存储科技有限责任公司 | Semiconductor test system and its test method |
| CN109916971A (en) * | 2019-04-25 | 2019-06-21 | 云南中烟工业有限责任公司 | A kind of fast non-destructive detection method of the fresh tobacco leaves moisture based on capacitor |
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| CN111157767A (en) * | 2020-01-14 | 2020-05-15 | 上海新克信息技术咨询有限公司 | Scanning probe and preparation method thereof |
| CN111722075A (en) * | 2020-06-30 | 2020-09-29 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Test structure for latent track characterization of GaN-based HEMT device and characterization method |
| CN111722075B (en) * | 2020-06-30 | 2022-10-18 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Test structure for latent track characterization of GaN-based HEMT device and characterization method |
| CN113341302A (en) * | 2021-06-30 | 2021-09-03 | 上海柯舜科技有限公司 | Semiconductor chip test bench |
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