CN106093474A - The potential barrier probe of solid dielectric thin film is had on needle point - Google Patents
The potential barrier probe of solid dielectric thin film is had on needle point Download PDFInfo
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- CN106093474A CN106093474A CN201610624180.XA CN201610624180A CN106093474A CN 106093474 A CN106093474 A CN 106093474A CN 201610624180 A CN201610624180 A CN 201610624180A CN 106093474 A CN106093474 A CN 106093474A
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- 238000005036 potential barrier Methods 0.000 title claims abstract description 41
- 238000004621 scanning probe microscopy Methods 0.000 claims abstract description 12
- 238000004630 atomic force microscopy Methods 0.000 claims abstract description 10
- 230000005611 electricity Effects 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 4
- 239000000806 elastomer Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 238000004647 photon scanning tunneling microscopy Methods 0.000 abstract description 10
- 238000013461 design Methods 0.000 abstract description 3
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- 239000007769 metal material Substances 0.000 description 3
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 208000035859 Drug effect increased Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
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- 239000003792 electrolyte Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 229910002804 graphite Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
- G01Q60/16—Probes, their manufacture, or their related instrumentation, e.g. holders
Abstract
The invention discloses the potential barrier probe having solid dielectric thin film on a kind of needle point, belong to the probe design field of scanning probe microscopy.Technical scheme main points are: have the potential barrier probe of solid dielectric thin film on needle point, including the conducting probe for scanning probe microscopy, described conducting probe by conduct electricity needle body and be arranged at conduction needle body free end conductive pinpoint constitute, this conductive pinpoint is coated with at least one of which solid dielectric thin film.The present invention is less demanding to hardness and the chemism of probe conductive material, wearability good and resolution high, it is particularly well-suited to scan-type electrochemical microscope, conducting atomic force microscopy and contact mode PSTM, is simultaneously suitable for the scanning probe microscopy of other present mode.
Description
Technical field
The invention belongs to the probe design field of scanning probe microscopy, be specifically related on a kind of needle point have solid-state electricity
The potential barrier probe of dielectric film.
Background technology
At present, the probe material almost all of PSTM is platinumiridio material or tungsten material, other material
Almost without.Trace it to its cause, be that the needle point of scanning probe microscopy (SPM) nearly all needs: (1) needle point hardness is the biggest；
(2) needle point inertia is big as far as possible, particularly with PSTM (STM).These 2 limit a lot of material and are not suitable for using
Make the probe of the probe of SPM, especially STM.
And, during STM work, between probe and sample, it is the need for electric insulation or the barrier material of intimate electric insulation
, but the barrier material of insulation does not only have common gaseous state or the liquid of electrochemistry STM, and the potential barrier of solid-state can also.And it is solid
The potential barrier of state has higher structural, unlike being easily changed of fluid-like, forms the unstability of potential barrier.
Further, the contact mode scanning tunnelling microscope, STM (Contact-STM) of recent invention also requires that conducting probe
There is one layer of solid isolation layer potential barrier the thinnest at tip.
But, above-mentioned solid-state, the probe of electric insulation potential barrier, be any one member in current SPM, any a probe
Do not possess.Currently, the most species of scanning force microscopy (SFM) probe, but mainly all insulation probe, for simple
Dynamometry.SFM pattern the earliest, representational example atomic force microscope (AFM).And the early stage of AFM development, probe is used for feeling
Knowing the active force of needle point and sample room, therefore whether it doesn't matter conduct electricity for cantilever beam, the most also has no effect on the test of AFM and becomes
Picture.But the probe of this entire body insulation, potential barrier is excessive, it is impossible to for measuring the PSTM of tunnelling current.
In the later stage of AFM development, the main flow that the probe of entire body conduction is increasingly becoming on market.Concrete application include AFM by
Gradually be combined appearance with STM can meet the spy that AFM, the probe entire body conduction that also can meet STM and probe tip all conduct electricity
Pin.It is typically to be made by highly doped or plating conductive layer technique.The probe of conducting atomic force microscopy CAFM, be also
So.The structure of this probe is entire body conduction equally, but, if the probe of entire body conduction is used for the pin of contact mode STM
During point, due to the good conductor of sample, it may occur that short circuit, cause measuring.
On the other hand, currently also can see many modes utilized at the needle surface single atom of absorption or molecule to modify
Needle point.Although some molecule can be classified as electrolyte one class, but the needle point that these modes are modified, absorption affinity is the most weak, easily takes off
Fall, it is impossible to be applied to the PSTM of contact mode.
In order to solve the difficult problem that these probe selections are limited, can be used for contact mode STM without probe, in project approval number
For: under the support of the state natural sciences fund " improvement of supper-fast PSTM and application " of 11304082, this is specially
Profit proposes the potential barrier probe having solid dielectric thin film for the tip of scanning probe microscopy.
Summary of the invention
Present invention solves the technical problem that and there is provided the potential barrier probe having solid dielectric thin film on a kind of needle point, this gesture
To the hardness of probe conductive material and chemical inertness is less demanding and can improve that needle point wearability is good and the resolution of image to build probe
Rate, is particularly well-suited to scan-type electrochemical microscope, conducting atomic force microscopy and contact mode PSTM, fits simultaneously
Scanning probe microscopy for other present mode.
The present invention solves that above-mentioned technical problem adopts the following technical scheme that, needle point has the potential barrier of solid dielectric thin film
Probe, including the conducting probe for scanning probe microscopy, it is characterised in that: described conducting probe is by conducting electricity needle body and setting
The conductive pinpoint being placed in conduction needle body free end is constituted, and this conductive pinpoint is coated with at least one of which solid dielectric thin film.
Further preferably, described conduction needle body is elastomer structure, and this elastomer structure is cantilever beam structure, spiral type
Spring structure or in a zigzag spring structure.
Further preferably, described conductor needle body comprises pressure drag material and/or comprises piezoelectric and/or comprise reflective
Film, constitutes pressure drag and/or piezoelectricity and/or reflective probe.
Further preferably, when the number of plies of described solid dielectric thin film is one layer, the thickness of this solid dielectric thin film
For 0.5-20nm, when the number of plies of solid dielectric thin film is multilamellar, the gross thickness of this solid dielectric thin film is 0.5-20nm, institute
The material of the solid dielectric thin film stated is aluminium sesquioxide, silicon dioxide, sodium chloride, sulfur, diamond, phosphorus or magnetodielectric
In one or more.
Further preferably, described solid dielectric thin film is that the technique using deposition or growth is made.
Further preferably, described conductive pinpoint is uniformly coated with the solid dielectric thin film of consistency of thickness or described
Conductive pinpoint on be coated with on the thick solid dielectric thin film in most advanced and sophisticated thin both sides or described conductive pinpoint and be coated with tip
The solid dielectric thin film that thick both sides are thin.
Further preferably, described conductive pinpoint is coated with the solid dielectric thin film that most advanced and sophisticated thick both sides are thin, this tip
The thin solid dielectric film outside in thick both sides is coated with the solid dielectric thin film that intermediate thin both sides are thick；Or described conduction
The solid dielectric thin film that most advanced and sophisticated thin both sides are thick it is coated with, the solid dielectric film outside bag that these most advanced and sophisticated thin both sides are thick on needle point
It is covered with the solid dielectric thin film that most advanced and sophisticated thick both sides are thin.
Further preferably, described conducting probe is conducting probe or the spy of described conduction of conducting atomic force microscopy
Pin is the platinumiridio probe or tungsten tipped probe being bent over.
Further preferably, the material of described conductive pinpoint is silver, copper, aluminum, ferrum, cobalt, sodium, potassium, nickel, rubidium or calcium.
The present invention compared with prior art has the advantages that
1, dielectric substance majority is harder, such as aluminium oxide, silicon oxide, diamond etc..So the dielectric membranous layer on needle point is usual
It is difficult to damage because of External force interference, and then the conductive pinpoint of inside can be protected.Therefore, (1) is as long as conductive pinpoint just processes
Time radius of curvature sufficiently small, it becomes possible to long-term high-resolution ground is used for imaging, it is not necessary to worry that needle point is worn；(2) even if making
The needle point of probe is made, it is also possible to ensure that needle point can be under the protection of hard dielectric film, by for a long time with softer metal material
High-resolution ground uses.(3) even if wearing and tearing once in a while, being also solid dielectric film portion of first wearing and tearing, real conductive pinpoint is also
Unaffected.(4) more when dielectric film layer abrasion, cause the imaging that can not carry out contact mode, it is also possible to carry out existing
Contour or the scanning of constant current mode STM.(5) even if dielectric layer is not worn, the probe of the present invention can also be applied to
Existing contour or constant current or the STM of electrochemical operation pattern, form solid-state, gaseous state, or solid-state, the STM of liquid double potential barrier
Study sample, potential barrier, quantum mechanics, STM instrument itself, the characteristic waited.
2, dielectric substance majority very inertia, even if so at air, even having certain corrosive atmosphere
In, it is also possible to normally used.Therefore, (1) even the metal material such as the stronger copper of chemism, ferrum, it is also possible to be used as
The material of needle point.The probe of existing metal material, such as tungsten pin, its surface has oxidized risk, causes under electric conductivity
The change of fall, surface texture；If when fresh tungsten tip is just carried out, just it is packaged protection with thin dielectric film, then
Its oxidized risk can be reduced, it is possible to have more metal probe can be used for STM scanning.Nor necessarily need
With being not easy the noble metal needle point of oxidation, such as platinumiridio probe, the expense of probe can be reduced and obtain difficulty.(2) may be used
There to be the probe of more surfaces density of electronic states form, it is used for the sample message detection of STM, preferably characterizes the letter of sample
Breath, characteristic.
3, suitable application area is wide.Due to the protection of inert dielectric film, the needle point of the present invention, electricity also can be advantageously applied to
Chemistry PSTM (EC-STM), conducting atomic force microscopy (CAFM) and present mode STM.A () is used for EC-STM
Time, the effect weakening more greatly faradic currents impact can be played；B (), when CAFM, can be avoided when CAFM sample conducts electricity
Property preferable time, be short-circuited, burn needle point or sample；C (), for the STM of present mode, can play the conduction that protection is sharp-pointed
Needle point and the effect increased the service life.
4, the size and dimension of thin dielectric film can artificially adjust, and plays modified tips, the work of raising STM resolution
With.The most various structures, by arranging the thickness of different parts dielectric film layer on conductive pinpoint, can have increasing to have
Regulate the electron tunneling probability of needle surface diverse location atom with subtracting, the tunnelling contribution of more prominent needle point top atom, carry
High-resolution.
Accompanying drawing explanation
Fig. 1 is the structural representation of the conducting probe having solid dielectric thin film on needle point；
Fig. 2 is the structural representation of the conducting probe having solid dielectric thin film on the conducting probe needle point after being bent over；
Fig. 3 is the structural representation that conducting probe needle point has the conducting probe of the solid-state electricity thin dielectric film of consistency of thickness；
Fig. 4 is the conducting probe structural representation that conducting probe needle point has the solid dielectric thin film of most advanced and sophisticated thin both sides thickness；
Fig. 5 is the conducting probe structural representation that conducting probe needle point has the thin solid dielectric thin film in most advanced and sophisticated thick both sides；
Fig. 6 is the conducting probe structural representation being coated with two-layer solid dielectric thin film；
Fig. 7 is used to characterize the structural representation of the pressure resistance type probe of the degree of crook of beam type probe；
Fig. 8 is used to characterize the structural representation of the piezoelectric type probe of the degree of crook of beam type probe；
Fig. 9 is used to characterize the structural representation of the reflecting type probe of the degree of crook of beam type probe.
In figure: 1, conducting probe；2, solid dielectric thin film；3, the solid dielectric thin film that most advanced and sophisticated thick both sides are thin；4, pressure
Resistance material；5, conductive film；6, insulating trip；7, piezoelectric bimorph or piezoelectric monocrystal sheet；8, structural material；9, reflective membrane；10, point
Hold the solid dielectric thin film that thin both sides are thick.
Detailed description of the invention
The particular content of the present invention is described in detail in conjunction with accompanying drawing.The most in the literature, such as the Nature of 2014
Materials volume 13 page 184 189, the Nature Physics volume 11 of 2015, page 235 239, wait article.Often
Can see and utilize STM to monolayer, bilayer or the research report of multi-layer insulation imaging, electric current wherein used is generally tens
PA magnitude.And the when of the imaging of high order graphite preferable to electric conductivity or gold film, electric current can reach nA, even tens
nA.Reason for that is in part because solid insulation thin film is just as vacuum insulation potential barrier, although can be tunneled over, but due to
Having the existence of vacuum insulation layer and solid insulating layer, the electric current cause potential barrier to become higher, tunneling through also becomes the least, little simultaneously
Arrive pA magnitude.
Therefore, if if removing vacuum insulation layer, only retaining the existence of solid insulating layer, then in same biased electrical
Pressure VbWith tunnelling current arrange under premise, electron tunneling is crossed the probability of insulation film and will be greatly increased, and tunnelling current is even
NA magnitude can be reached；The thickness of the insulation film that can tunnel through, also can be greatly increased, and is only no longer common double
Layer, and it is likely to be three layers, four layers, even more multilamellar, significantly increase on needle point, successfully deposit insulation dielectric thin film
Alternative.
Therefore, if this patent devises to deposit on the needle point of conducting probe or grow one layer or very thin exhausted of dried layer
The conducting probe of edge thin dielectric film.Owing to dielectric insulation film is for the electronics of conduction, be the equal of potential barrier, therefore,
Potential barrier probe can be called again.It is typically the several or thickness of tens atomic layers, about within 10nm.
The design of this patent it is to be understood that 1, insulating barrier between probe and sample, have been moved to the tip of probe；Probe
The vacuum barrier of sample room, is substituted by solid insulating layer potential barrier whole or in part.
Even if the operation principle of the probe described in this patent and structure ensure that probe tip has touched sample, the most not
Electrical short phenomenon can be caused as conducting probe directly contacts with conducting sample to occur, and therefore the probe of this structure can be by
For:
1, the most contour or constant current or the probe of electrochemistry Mode S TM.Form solid-state/gaseous state, or liquid/solid double potential barrier is same
Time exist, a ready-made probe can be protected by solid-state barrier material well, it is to avoid due to striker or rubbed sample
The needle point hydraulic performance decline that surface etc. cause.
2, the probe of contact mode STM.Only solid-state potential barrier exists, without vacuum or gaseous state potential barrier between probe and sample, real
Imaging under existing contact mode.
3, the probe of conducting atomic force microscopy CAFM pattern.The thin film of insulation can protect the current-carrying part of needle point, dimension
Hold the little radius of curvature of its current-carrying part, increase the resolution to sample.
Details during use also includes:
(1) when dielectric film is solid, it is possible to use common aluminium sesquioxide, silicon dioxide, solid sodium chloride, sulfur, Buddha's warrior attendant
The material such as stone or phosphorus.(2) when the probe of this principle is used for the pattern of Contact-STM, in order to better control over spy
The spacing of pin and sample, does not make dielectric film clash into sample surfaces, causes probe or/and the damage of sample, can outstanding by probe
Arm section is designed as the elastic construction that the coefficient of stiffiness is less.Such as the tip of the probe of the CAFM less at coefficient of stiffiness k value, plating or
Person grows one layer of insulation dielectric thin film.
The advantage during probe manufacturing of the present invention includes:
(1) the most ripe plated film or the technique of growth insulation film, the enforcement smoothly for this invention provides great convenience.
(2) and, in semiconductor technology circle, the most thinning along with silicon dioxide insulating layer, it is progressively become conductor from insulator, also
Further illustrating, we can utilize thickness silicon dioxide between good conductor and good insulator completely, makees us
Solid-state potential barrier.And the hardness of silicon dioxide is moderate, it is beneficial to the test to sample.(3) due to the nanometer on nanoscale needle point
The characteristic of class B insulation layer, is very similar to nano-particle, and therefore its electrology characteristic also will appear from small-size effect.Report if any document
Claiming, silica dioxide granule starts conduction when 20nm diameter.Therefore, when making film barrier with silicon dioxide, may also need
Wanting the thickness of more than 20nm, this is more beneficial for the selection of needle point solid dielectric insulation film thickness.(4) micro electronmechanical owing to using
The probe cost of system (MEMS) fabrication techniques CAFM out is the highest, and the probe of PSTM might not
Need vibration, so, it would however also be possible to employ by tungsten pin or the probe bending of platinumiridio of conduction, reduce the stubborn system of probe structure
Number, " 7 " character form structure forming AFM probe realizes.
Embodiment 1
The potential barrier probe being made after platinumiridio probe tip depositing solid thin dielectric film
First, one end pliers or shears that are about the platinumiridio silk of 10mm, diameter 0.15mm are cut sharp-pointed conductive pin
Pointed one-tenth conducting probe 1, then, deposits the thick silicon dioxide of one layer of about 10nm on the conductive pinpoint of described conducting probe 1
Solid dielectric thin film 2.
Embodiment 2
The potential barrier probe being made after the platinumiridio probe tip depositing solid thin dielectric film of bending
Embodiment 1 is finally converted into about 110 ° platinumiridio silk at about 2mm after the conductive pinpoint of conducting probe 1
Angle.Owing to the probe of PSTM need not vibration, therefore, it is not required to conducting probe and there is the vibration of excellence
Stability.
Embodiment 3
The potential barrier probe of CAFM probe tip depositing solid thin dielectric film production
First find a probe for CAFM, the conductive pinpoint of described probe deposits the thick titanium dioxide of one layer of about 10nm
Silicon solid dielectric thin film.
Embodiment 4
Deposition has the conducting probe of the solid dielectric thin film of different-thickness and location layout
As in Figure 3-5, the thickness of its solid dielectric thin film and location layout are respectively as follows: Fig. 3 is that conducting probe 1 is most advanced and sophisticated uniformly
It is coated with the conducting probe of the solid dielectric thin film 2 of consistency of thickness, is the layout being most easily understood by and accepting.
Fig. 4 is that the conductive pinpoint deposition of conducting probe 1 has the conduction of the thick solid dielectric thin film 10 in most advanced and sophisticated thin both sides to visit
Pin.The barrier width being equivalent to different parts on conductive pinpoint is different, barrier width little both sides, conductive pinpoint top barrier width
Greatly, the tunnelling probability of needle point different parts can therefore be regulated.Assuming that the potential barrier of vacuum is less than the dielectric film of deposition on needle point
Potential barrier, then the most advanced tunnelling probability of needle point will be made to increase, both sides tunnelling probability reduces, and then realizes " with less song
The needle point of rate radius " scanning sample effect, improve imaging resolution.But due to the method or cause needle point thicker greatly, institute
The sample more smooth to be suitable for surface.
Fig. 5 is that the conductive pinpoint deposition of conducting probe 1 has the conduction of the thin solid dielectric thin film 3 in most advanced and sophisticated thick both sides to visit
Pin.The method can make needle point become more tiny, the sample that applicable surface is the most smooth；If selecting barrier height less than vacuum
Dielectric substance, then the dielectric film on this top will form " resistance " less conductive channel, and then obtains and Fig. 4
In identical effect, improve the resolution of imaging.
Embodiment 5
As shown in Figure 6, the conductive pinpoint of conducting probe 1 deposits the potential barrier height of the solid dielectric thin film 3 having most advanced and sophisticated thick both sides thin
The solid dielectric thin film 10 that outside the solid dielectric thin film 3 that degree is thin less than most advanced and sophisticated thick both sides, the thin both sides, tip of deposition are thick
Barrier height, then select suitable dielectric substance, it is possible to achieve simultaneously change height and the width of potential barrier, modified tips,
Realize long-term, stable ultrahigh resolution imaging.
Embodiment 6
It is used for characterizing the pressure resistance type probe of the degree of crook of beam type probe
As it is shown in fig. 7, this probe is in addition to by most basic conducting probe 1 and solid dielectric thin film 2, also pressure drag material
4 and form the conductive film 5 in loop therewith.Solid-state electricity is all had between pressure drag material 4 and conducting probe 1 and conductive film 5
Dielectric film 2, it is to avoid short circuit.Resistance R is formed between conductive film 5 and pressure drag material 4X, conducting probe extraction electrode ET, these 3
Electrode lay-out is on insulating trip 6, and is external to test in circuit.
When resistance value R measuring pressure drag materialxWhen changing, illustrate that cantilever beam is bending, needle point and sample
Between pressure there occurs change.Now, if needing needle point and sample room to maintain constant active force and counteracting force, then can
So that this resistance is accessed feedback amplifier, the signal of output is applied to be fixed with in the driver of this probe or testing sample,
And then the spacing of needle point and sample can be changed.
Embodiment 7
It is used for characterizing the piezoelectric type probe of beam type probe degree of crook
As shown in Figure 8, this probe is in addition to by most basic conducting probe 1 and solid dielectric thin film 2, the most electroded
Piezoelectric monocrystal sheet or piezoelectric bimorph 7.The cantilever deflection of beam caused due to the fluctuating of sample surfaces, the voltage formed becomes
ChangeV dCan be exaggerated and detect.
As the output voltage values V measuring single-chip or piezoelectric bimorphxWhen changing, illustrate that cantilever beam is curved in generation
Song, needle point there occurs change with the pressure of sample room.Now, if needing needle point and sample room to maintain constant active force and instead
Active force, then can be by this resistance magnitude of voltage VxAccessing feedback amplifier, the signal of output is applied to be fixed with this probe
Or in the driver of testing sample, and then the spacing of needle point and sample can be changed.
Owing to the fluctuating on sample surface is generally in nanometer to micron dimension, therefore can be by reducing the thickness of piezoelectric patches
Degree, the length increasing piezoelectric patches and increase driving voltage realize this deformation quantity, and then need not extra driver.Mode letter
Single, quick.
Embodiment 8
It is used for characterizing the reflecting type probe of beam type probe degree of crook
As it is shown in figure 9, this probe is in addition to by most basic conducting probe 1 and solid dielectric thin film 2, it is also possible to avoid
The softest unstable structural material 8 caused of probe material and reflective membrane 9, utilize the position of the hot spot being reflected off, permissible
The deformation quantity of perception cantilever beam, it is possible to by with feeding back to control system, make the deformation quantity of cantilever beam remain unchanged.
The ultimate principle of the present invention, principal character and advantage have more than been shown and described, without departing from the present invention spirit and
On the premise of scope, the present invention also has various changes and modifications, and these changes and improvements both fall within claimed invention
Scope.
Claims (9)
1. having the potential barrier probe of solid dielectric thin film on needle point, including the conducting probe for scanning probe microscopy, it is special
Levy and be: described conducting probe by conduct electricity needle body and be arranged at conduction needle body free end conductive pinpoint constitute, this conductive pin
At least one of which solid dielectric thin film it is coated with on point.
The potential barrier probe of solid dielectric thin film is had on needle point the most according to claim 1, it is characterised in that: described leads
Acusector body is elastomer structure, and this elastomer structure is cantilever beam structure, coil spring structure or zigzag spring structure.
The potential barrier probe of solid dielectric thin film is had on needle point the most according to claim 1 and 2, it is characterised in that: described
Conductor needle body comprise pressure drag material and/or comprise piezoelectric and/or comprise reflective membrane, constitute pressure drag and/or piezoelectricity and/or
Reflective probe.
The potential barrier probe of solid dielectric thin film is had on needle point the most according to claim 1, it is characterised in that: described consolidates
When the number of plies of state thin dielectric film is one layer, the thickness of this solid dielectric thin film is 0.5-20nm, solid dielectric thin film
When the number of plies is multilamellar, the gross thickness of this solid dielectric thin film is 0.5-20nm, and the material of described solid dielectric thin film is
One or more in aluminium sesquioxide, silicon dioxide, sodium chloride, sulfur, diamond, phosphorus or magnetodielectric.
5. according to the potential barrier probe having solid dielectric thin film on the needle point described in claim 1 or 4, it is characterised in that: described
Solid dielectric thin film be use deposition or growth technique make.
The potential barrier probe of solid dielectric thin film is had on needle point the most according to claim 1, it is characterised in that: described leads
It is uniformly coated with on acusector point on the solid dielectric thin film of consistency of thickness or described conductive pinpoint and is coated with most advanced and sophisticated thin two
The solid dielectric thin film that most advanced and sophisticated thick both sides are thin it is coated with on the solid dielectric thin film of side thickness or described conductive pinpoint.
The potential barrier probe of solid dielectric thin film is had on needle point the most according to claim 1, it is characterised in that: described leads
The solid dielectric thin film that most advanced and sophisticated thick both sides are thin, the solid dielectric film outside that thick both sides, this tip are thin it is coated with on acusector point
It is coated with the solid dielectric thin film that intermediate thin both sides are thick；Or it is coated with thick the consolidating in most advanced and sophisticated thin both sides on described conductive pinpoint
State thin dielectric film, the solid dielectric film outside of this most advanced and sophisticated thin both sides thickness is coated with the solid dielectric that most advanced and sophisticated thick both sides are thin
Thin film.
The potential barrier probe of solid dielectric thin film is had on needle point the most according to claim 1, it is characterised in that: described leads
Electric probe be the conducting probe of conducting atomic force microscopy or described conducting probe be the platinumiridio probe being bent over or
Tungsten tipped probe.
The potential barrier probe of solid dielectric thin film is had on needle point the most according to claim 1, it is characterised in that: described leads
The material of acusector point is silver, copper, aluminum, ferrum, cobalt, sodium, potassium, nickel, rubidium or calcium.
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| CN201610624180.XA CN106093474A (en) | 2016-08-02 | 2016-08-02 | The potential barrier probe of solid dielectric thin film is had on needle point |
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| CN201610624180.XA CN106093474A (en) | 2016-08-02 | 2016-08-02 | The potential barrier probe of solid dielectric thin film is had on needle point |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108802434A (en) * | 2018-03-15 | 2018-11-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | probe, preparation method and its application in scanning capacitance microscope |
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| JP2005195500A (en) * | 2004-01-08 | 2005-07-21 | Shimadzu Corp | Near-field optical probe and near-field optical microscope using the same |
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| CN105510637A (en) * | 2014-09-24 | 2016-04-20 | 中国科学院宁波材料技术与工程研究所 | Micro-nano thermoelectric in-situ detection device and method based on scanning probe microscope |
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| JPH0534106A (en) * | 1991-07-31 | 1993-02-09 | Hitachi Ltd | Probe-tip limiting method |
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| JP2000074812A (en) * | 1998-09-02 | 2000-03-14 | Seiko Instruments Inc | High-output optical probe and optical system |
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| CN108802434A (en) * | 2018-03-15 | 2018-11-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | probe, preparation method and its application in scanning capacitance microscope |
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Application publication date: 20161109 |