CN108801931A - 一种富硼层和硼硅玻璃层的快速无损椭偏测试方法 - Google Patents
一种富硼层和硼硅玻璃层的快速无损椭偏测试方法 Download PDFInfo
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- CN108801931A CN108801931A CN201810638142.9A CN201810638142A CN108801931A CN 108801931 A CN108801931 A CN 108801931A CN 201810638142 A CN201810638142 A CN 201810638142A CN 108801931 A CN108801931 A CN 108801931A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
- G01N2021/213—Spectrometric ellipsometry
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CN201810638142.9A CN108801931B (zh) | 2018-06-20 | 2018-06-20 | 一种富硼层和硼硅玻璃层的快速无损椭偏测试方法 |
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CN201810638142.9A CN108801931B (zh) | 2018-06-20 | 2018-06-20 | 一种富硼层和硼硅玻璃层的快速无损椭偏测试方法 |
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CN108801931A true CN108801931A (zh) | 2018-11-13 |
CN108801931B CN108801931B (zh) | 2021-06-15 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023060813A1 (zh) * | 2021-10-13 | 2023-04-20 | 长鑫存储技术有限公司 | 材料中元素浓度的检测方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101548392A (zh) * | 2006-12-01 | 2009-09-30 | 夏普株式会社 | 太阳能电池及其制造方法 |
CN102169923A (zh) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | 钝化n型硅太阳能电池的p型掺杂层的方法及电池结构 |
US20120187539A1 (en) * | 2011-01-25 | 2012-07-26 | International Business Machines Corporation | Device and method for boron diffusion in semiconductors |
CN103632935A (zh) * | 2013-11-29 | 2014-03-12 | 英利集团有限公司 | N 型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 |
CN105674899A (zh) * | 2016-01-26 | 2016-06-15 | 国家纳米科学中心 | 一种采用光谱椭偏仪对金属膜进行检测的方法 |
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2018
- 2018-06-20 CN CN201810638142.9A patent/CN108801931B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101548392A (zh) * | 2006-12-01 | 2009-09-30 | 夏普株式会社 | 太阳能电池及其制造方法 |
US20120187539A1 (en) * | 2011-01-25 | 2012-07-26 | International Business Machines Corporation | Device and method for boron diffusion in semiconductors |
CN102169923A (zh) * | 2011-03-05 | 2011-08-31 | 常州天合光能有限公司 | 钝化n型硅太阳能电池的p型掺杂层的方法及电池结构 |
CN103632935A (zh) * | 2013-11-29 | 2014-03-12 | 英利集团有限公司 | N 型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 |
CN105674899A (zh) * | 2016-01-26 | 2016-06-15 | 国家纳米科学中心 | 一种采用光谱椭偏仪对金属膜进行检测的方法 |
Non-Patent Citations (2)
Title |
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CHANSEOK KIM ET AL.: "Properties of boron-rich layer formed by boron diffusion in n-type silicon", 《THIN SOLID FILMS》 * |
MIHAILETCHI ET AL.: "Surface Passivation of Boron-Diffused Junctions by a Borosilicate Glass and In Situ Grown Silicon Dioxide Interface Layer", 《IEEE JOURNAL OF PHOTOVOLTAICS》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023060813A1 (zh) * | 2021-10-13 | 2023-04-20 | 长鑫存储技术有限公司 | 材料中元素浓度的检测方法 |
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Application publication date: 20181113 Assignee: Zhejiang Taiheng new energy Co.,Ltd. Assignor: NINGBO INSTITUTE OF MATERIALS TECHNOLOGY & ENGINEERING, CHINESE ACADEMY OF SCIENCES Contract record no.: X2022980019716 Denomination of invention: A fast and nondestructive ellipsometry method for measuring boron rich layer and borosilicate glass layer Granted publication date: 20210615 License type: Common License Record date: 20221027 |
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Application publication date: 20181113 Assignee: Central Aineng (Gaoyou) Energy Technology Co.,Ltd. Assignor: NINGBO INSTITUTE OF MATERIALS TECHNOLOGY & ENGINEERING, CHINESE ACADEMY OF SCIENCES Contract record no.: X2022980024158 Denomination of invention: A fast and nondestructive ellipsometry method for measuring boron rich layer and borosilicate glass layer Granted publication date: 20210615 License type: Common License Record date: 20221202 |
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Application publication date: 20181113 Assignee: NINGBO ZHAOBAO MAGNET Co.,Ltd. Assignor: NINGBO INSTITUTE OF MATERIALS TECHNOLOGY & ENGINEERING, CHINESE ACADEMY OF SCIENCES Contract record no.: X2023980030244 Denomination of invention: A Fast Nondestructive Ellipsometry Method for Boron-rich Layer and Borosilicate Glass Layer Granted publication date: 20210615 License type: Common License Record date: 20230109 |
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