CN108801184A - Two-dimentional orientation error precision measurement system for thin plate crystals - Google Patents
Two-dimentional orientation error precision measurement system for thin plate crystals Download PDFInfo
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- CN108801184A CN108801184A CN201810812585.5A CN201810812585A CN108801184A CN 108801184 A CN108801184 A CN 108801184A CN 201810812585 A CN201810812585 A CN 201810812585A CN 108801184 A CN108801184 A CN 108801184A
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- 239000013078 crystal Substances 0.000 title claims abstract description 105
- 238000005259 measurement Methods 0.000 title claims abstract description 19
- 238000006073 displacement reaction Methods 0.000 claims abstract description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 5
- 230000000694 effects Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 241001216449 Crystallophyes Species 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
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- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention discloses a kind of two-dimentional orientation error precision measurement systems for thin plate crystals, acquisition monochromatic light directed utilizes the fixed crystal prototype to be measured of holder after X-ray source exposes to monochromator in system, holder around positioned at vertical direction Z axis, the rotation of horizontal direction Y-axis is vertically positioned in Z axis, the crystal face to be measured of holder straight-line displacement on the direction perpendicular to Y-axis, crystal prototype to be measured is vertical with Y-axis.Two-dimentional orientation error may be implemented using above-mentioned measuring system to measure；Standard crystal is not depended on, measurement result precision is high；It can obtain two aspect information of orientation error size and direction.
Description
Technical field
The present invention relates to a kind of crystal orientation error measuring system and measurement methods, more particularly to one kind to be spread out based on X-ray
Technology is penetrated, the two-dimentional accurate measurement of thin plate crystals orientation error is suitable for, belongs to crystal X-ray detection the relevant technologies.
Background technology
Crystal is a kind of material being widely used in semi-conductor industry and X-ray light splitting field.In crystallography, pass through
Crystal face is defined the arrangement orientation of crystals atom is described.To different use occasions and crystalline, need to select
Different crystal faces.However, in actual production process, there may be angles between selected crystal face and crystallophy surface.
Orientation error is defined as the angle between crystal face normal direction and physical surface normal direction.The presence of orientation error can be to crystal
Performance has various influences：In semiconductor industry, orientation error can cause the electricity of crystal, magnetic property to change
Become, influences electronic component performance.In X-ray optical field, orientation error can influence crystal photoelement energy and space point
Resolution.Therefore, the orientation error for accurately measuring crystal is of great significance.In order to accurately measure orientation error, measures content and answer
Including three aspects：1. the size of orientation error；2. the direction of orientation error；3. the Two dimensional Distribution of orientation error.Only by this
Three parameters are all measured, and could describe the orientation error of crystal perfectly.
Currently, X-ray diffraction (X-raydiffraction, abbreviation XRD) is a kind of common crystal detection means.Root
According to Bragg principles, X-ray wavelength has following relationship with crystal interplanar distance and the angles Bragg：
N λ=2dsin θ are 1.
Wherein, n is diffraction time, and λ is X-ray wavelength, and d is spacing of lattice, and θ is the angles Bragg.Therefore, when monochromatic X- is penetrated
When line is radiated on crystal face, the light of certain degree is only formed with crystal face can just occur diffraction, this is the base of XRD crystal detection
Plinth.
When existing crystal direction finder is by measuring monochromatic x-rays by crystal diffraction, crystallophy surface and incident light
Angle, and using the difference at the angle and the angles Bragg as the orientation error of crystal.But this measurement method has three aspects to ask
Topic：
1. the X-ray hot spot being radiated on crystal is larger, the orientation error measured is being averaged in entire spot area
Value, sample stage also do not have translation functions, are unable to get the Two dimensional Distribution of orientation error；
2. the orientation error measured is projection of the actual orientation error in the direction, measurement result is inaccurate, meanwhile, it is existing
The direction of orientation error can not be measured by having equipment also；
3. the angle of sample stage needs benchmark, existing method be demarcated using standard crystal, then, standard crystal sheet
The orientation error of body will accumulate in final measurement result.
As it can be seen that existing direction finder cannot be satisfied the demand of two-dimension high-precision crystal orientation.
Invention content
The primary and foremost purpose of the present invention is to provide a kind of two dimensional crystal orientation error measuring system, can realize high-precision two-dimensional
Orientation error measures.
To achieve the above object, present invention employs following technical schemes：A kind of two dimension orientation for thin plate crystals is missed
Poor precision measurement system, it is characterised in that：X-ray source, X-ray source obtain monochromatic light directed crystalline substance to be measured after exposing to monochromator
Body sample is provided with holder on workbench and fixes crystal prototype to be measured, and holder is around the Z axis, vertical with Z axis positioned at vertical direction
Positioned at the rotation of horizontal direction Y-axis, holder straight-line displacement on the direction perpendicular to Y-axis, the crystal face to be measured of crystal prototype to be measured
It is vertical with Y-axis.
Using above-mentioned measuring system, its technique effect is embodied in following several respects：1. two-dimentional orientation error may be implemented to survey
Amount；2. not depending on standard crystal, measurement result precision is high；3. two aspect information of orientation error size and direction can be obtained.
Description of the drawings
Fig. 1 is the measuring principle schematic diagram of the present invention；
Fig. 2 is the definition schematic diagram of relevant parameter；
Fig. 3 is the structural schematic diagram of the present invention.
Specific implementation mode
Embodiment 1
In conjunction with Fig. 3, it to be used for the two-dimentional orientation error precision measurement system of thin plate crystals, X-ray source 20, X-ray source 20
Monochromatic light directed crystal prototype A to be measured is obtained after exposing to monochromator 30, holder is provided on workbench 10 and fixes crystal to be measured
Sample A, holder around positioned at vertical direction Z axis, with Z axis be vertically positioned in horizontal direction Y-axis rotation, holder is perpendicular to Y-axis
Direction on straight-line displacement, the crystal face to be measured of crystal prototype A to be measured is vertical with Y-axis.
The X-ray sent out by X-ray source 20 forms monochromatic light by monochromator 30, and passes through collimation diaphragm 40, purpose
It is to obtain the monochromatic x-rays of small size small divergence angle, realizes the measurement to the parts crystal prototype A to be measured.It in this way can be to avoid survey
The excessive caused average effect in region is measured, measurement accuracy and spatial discrimination are improved.
Crystal prototype A to be measured is mounted on workbench 10, it is desirable that meeting basic function includes：(1) fixes crystalloids to be measured
Product A；(2) realizes Bragg angle precision sweeps, is rotated in Fig. 1 around the directions z；(3) angle recordings；(4) realizes azimuth rotation
Turn, is rotated around the directions y in Fig. 1；(5) realizes two-dimensional movement, the directions x and the translation of the directions z in Fig. 1.The implementation of certain above-mentioned movement
Posture and the position of crystal prototype A to be measured are mainly adjusted, these rotations or movement realize have below by relevant mechanism
Body explanation.
Holder includes sucker or plate 51, attaching side plate face with the back side of crystal prototype A to be measured and be laid on suction disc 51
The sucker being connected with vacuum environment, suction disc 51 are connected on the dynamic platform 52 of index table 50, are moved platform 52 and are rotated around Y-axis.Crystalline substance to be measured
The fixed form of body sample A can be mechanical or air suction type etc., it is desirable that fix thin plate crystals smooth.
The Jing Tai of index table 50 is connected on the dynamic pedestal 61 of precise rotating platform 60, moves Z axis of the pedestal 61 around vertical direction
Rotation.
Precise rotating platform 60 is the angles Bragg precision sweep device, and effect is the precision for realizing crystal prototype A to be measured around the directions z
Scanning changes angle, the i.e. angles Bragg between X-ray and crystal face.The effect of angle recordings is crystalline substance to be measured during record measures every time
Variable quantity of the body around the precision sweep of the directions z.Index table 50 is to realize azimuth rotary setting, and effect is to realize crystal around y
The rotation in direction, is rotated by azimuth, can be completed measurement of the crystal under different orientations, is somebody's turn to do by data processing
The orientation error of position crystal.
Collimation diaphragm 40 is set between monochromator 20 and the crystal face to be measured of crystal prototype A to be measured, and crystal prototype A's to be measured waits for
It surveys and arranges detector 70 on the reflection direction of the reflected light of crystal face.The arrangement of this incident light can be to avoid measured zone mistake
Big caused average effect.
The two-dimension translational platform 80 that guide and limit mechanism is constituted is set between suction disc 51 and dynamic platform 52, and two-dimension translational platform 80 includes
Orthogonal in-plane displancement guiding mechanism, the displacement surface are vertical with Y direction.
The effect of two-dimensional movement is the movement for realizing the crystal face to be measured of crystal prototype A to be measured in xOz planes, reaches measurement
The purpose of two-dimentional orientation error.
The present invention measuring system require precise rotating platform 60 be the angles Bragg precision sweep shaft, that is, Fig. 1 in the directions z, point
Degree turntable 50 is that the directions y in azimuth rotating shaft, that is, Fig. 1 are intersected with X-ray optical axis；Also, the intersection point is located at crystalline substance to be measured
Body surface face.On the one hand it can ensure that X-ray is radiated at plane of crystal to be measured always when carrying out Bragg angle precision sweeps in this way
Same position, on the other hand can ensure that X-ray is radiated at crystal table to be measured always when changing crystal orientation angle to be measured
The same position in face.
The measuring system of the present invention require the physical surface of crystal to be measured with index table 50 i.e. azimuth rotating shaft i.e.
The directions y in Fig. 1 are vertical, can ensure the angle i.e. crystal face normal direction of measured crystal face normal direction and azimuth rotating shaft in this way
With the angle of physical surface normal direction, that is, orientation error.
When O point of the x-ray irradiation of monochromatic small light spot on plane of crystal to be measured, only pressed from both sides in X-ray and crystal face
When angle meets Bragg principles, monochromatic x-rays just can be by crystal diffraction.Realize crystal to be measured around z by workbench in the present invention
The scanning of direction rotation.In scanning process, using the variation of X-ray intensity on 70 detection of diffracted direction of detector, work as intensity
Reach maximum value, illustrates that the angle of X-ray at this time and crystal face is the angles Bragg θ B, it is Δ that sample rotates corresponding reading around z-axis
θ0.The statement connotation having the same of crystal to be measured and crystal prototype A to be measured.
Embodiment 2
A kind of two-dimentional orientation error precision measurement method of thin plate crystals, includes the following steps：
Step 1：It is zero or initial bit by the playback of index table 50, precise rotating platform 60 and two-dimension translational platform 80, crystal to be measured
Sample A is fixed on suction disc 51；
Step 2：The survey on theoretical interplanar distance, the directions x and the directions z of crystal prototype A to be measured is inputted in the controls
The angle interval that point spacing and measuring point quantity, azimuth rotate every time
Step 3：Control system is managed according to the theoretical interplanar distance inputted in monochromatic x-rays wavelength, above-mentioned steps 2
The angles Bragg of opinion,Control precise rotating platform 60 by the plane of crystal to be measured of crystal prototype A to be measured and X-ray angle rotate to The angles Bragg, and detector 70 and X-ray angle are rotated to 2 times of the angles Bragg；Step 4：Using precise rotating platform 60 to be measured
Crystal prototype A is scanned around the angles θ in the directions z, when 70 signal of detector reaches most strong, is recorded around the side z by angular encoder
To corner numerical value；
Step 5：It controls index table 50 and rotates at the phase angle of crystal prototype A to be measured around the directions y and changeIt repeats
Step 4；
Step 6：Step 5 is repeated, completing 360 ° until the phase angle of crystal prototype A to be measured rotates, that is, completes the position
It measures；
Step 7：According to the measuring point spacing and measuring point quantity on the directions x and the directions z, control two-dimension translational platform moves crystalline substance to be measured
Body sample A is to next measurement position；
Step 8：Step 4~7 are repeated, until completing the measurement to all positions on crystal prototype A to be measured；
Step 9：It is carried out accordingly to each measurement position phase angle and around the directions z corner numerical value using following relationship
Fitting, you can obtain the Two dimensional Distribution of crystal prototype A orientation errors to be measured：
In above-mentioned relation formula, Δ θ is θ variable quantities, characterizes the reading that sample stage is rotated around z-axis, is the data measured；α
For the size of orientation error, it is the projection of surface normal rotational trajectory circle in the x direction to characterize brilliant Δ θ to be measured.
Sample stage is rotated by a certain angle around the directions y, that is, changes the azimuth of crystal to be measuredDue to azimuth shaft
(directions y) intersects at O points with X-ray, then, X-ray is still radiated on O points after rotation.But due to orientation error
The angle of the presence of α, X-ray and crystal face can change, and cause X-ray can not be by crystal diffraction.At this point, passing through sample again
Platform carries out angle scanning of the crystal to be measured around the directions z, when the signal strength that detector detects reaches maximum value, sample stage again
It is Δ θ to rotate corresponding reading around the directions z1.Successively by Crystal Rotation to be measured to different orientations, and measure Δ θi。
Since azimuth shaft and plane of crystal normal direction are parallel, if being reference with crystal face normal direction, in circular dividing table 50
In rotary course, it is equivalent to surface normal direction and is rotated around normal of crystal surface direction.On the other hand, each Δ θ is in X-ray
Angle with crystal face is θBWhen obtain, so measuring principle can be reduced to Fig. 2, i.e.,：In measurement process, surface normal phase
Crystal face normal direction is rotated, in order to make θBSize remains unchanged, and needs the size for changing θ.The variation delta θ of θ by orientation error α and
Rotation phaseIt codetermines.As shown in Fig. 2, Δ θ is the projection of surface normal rotational trajectory circle in the x direction, meet such as ShiShimonoseki
System：
As shown in Fig. 2, relational expression 2. in, Δ θ be θ variable quantities, characterize the reading that sample stage rotate around z-axis, be survey
The data obtained；α is the size of orientation error, characterizes the angle between crystal crystal face normal direction and physical surface normal direction to be measured, Φ is
The phase of orientation error, when to be characterized in azimuth be 0, in the angle of xOz plane projections and x positive directions, the two is orientation error
It is to be measured；It is azimuth, the angle rotated around y-axis by sample stage provides；ω is orientation ascent, since Δ θ periods of change are
Therefore 2 π work as azimuthWhen using radian as unit, ω=1, whenWhen using angle as unit, ω=π/180；θBFor Bragg
Angle is obtained by theoretical calculation.
By data (Δθ0)、(Δθ1)、(Δθ2)、……(Δθn) be 2. fitted according to relational expression, you can
To the orientation error information of O points.
Claims (5)
1. a kind of two-dimentional orientation error precision measurement system for thin plate crystals, it is characterised in that：X-ray source (20), X- is penetrated
Line source (20) exposes to monochromator (30) and obtains monochromatic light directed crystal prototype to be measured (A) afterwards, and workbench is provided with branch on (10)
Frame fixes crystal prototype (A) to be measured, holder around positioned at vertical direction Z axis, turning for horizontal direction Y-axis is vertically positioned in Z axis
Dynamic, the crystal face to be measured of holder straight-line displacement in the plane perpendicular to Y direction, crystal prototype (A) to be measured is vertical with Y-axis.
2. measuring system according to claim 1, it is characterised in that：Holder includes sucker or suction disc (51), suction disc (51)
On attach side plate face with the back side of crystal prototype to be measured (A) and be laid with the sucker being connected with vacuum environment, suction disc (51) company
It is connected on the dynamic platform (52) of index table (50), moves platform (52) and rotated around Y-axis.
3. measuring system according to claim 2, it is characterised in that：The Jing Tai of index table (50) is connected to precise rotating platform
(60) on dynamic pedestal (61), the Z axis for moving pedestal (61) around vertical direction rotates.
4. measuring system according to claim 1, it is characterised in that：Monochromator (20) is waited for crystal prototype to be measured (A's)
Collimation diaphragm (40) is set between survey crystal face, is arranged on the reflection direction of the reflected light of the crystal face to be measured of crystal prototype (A) to be measured
Detector (70).
5. measuring system according to claim 2 or 3, it is characterised in that：It is arranged between suction disc (51) and dynamic platform (52) and leads
The two-dimension translational platform (80) constituted to position-limit mechanism, two-dimension translational platform (80) includes that the orthogonal in-plane displancement of the direction of motion is led
To mechanism, the displacement surface is vertical with Y direction.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810812585.5A CN108801184A (en) | 2018-07-23 | 2018-07-23 | Two-dimentional orientation error precision measurement system for thin plate crystals |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810812585.5A CN108801184A (en) | 2018-07-23 | 2018-07-23 | Two-dimentional orientation error precision measurement system for thin plate crystals |
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| JP2005241578A (en) * | 2004-02-27 | 2005-09-08 | Rigaku Corp | X-ray apparatus for measuring crystal orientation, system for holding crystal sample using the same, and method for cutting crystal along constant orientation used therefor |
| CN101776619A (en) * | 2009-12-15 | 2010-07-14 | 丹东奥龙射线仪器有限公司 | X-ray crystal orientation device |
| CN202486072U (en) * | 2012-02-23 | 2012-10-10 | 朱史胜 | Sapphire crystal X-ray automatic orientation material bonding machine |
| CN103257150A (en) * | 2012-08-31 | 2013-08-21 | 云南北方驰宏光电有限公司 | Crystal direction finder for directly measuring deflecting angle in crystal orientation and measurement method thereof |
| CN103267767A (en) * | 2013-04-01 | 2013-08-28 | 合肥晶桥光电材料有限公司 | Multifunctional x-ray direction finder |
| CN204214795U (en) * | 2014-11-28 | 2015-03-18 | 温岭市朗杰机械设备有限公司 | The directed sizing machine of the automatic X-ray of a kind of pole crystal |
| CN208520344U (en) * | 2018-07-23 | 2019-02-19 | 安徽创谱仪器科技有限公司 | Two-dimentional orientation error precision measurement system for thin plate crystals |
-
2018
- 2018-07-23 CN CN201810812585.5A patent/CN108801184A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06258260A (en) * | 1993-03-05 | 1994-09-16 | Seiko Instr Inc | X-ray diffraction device |
| CN1620602A (en) * | 2002-01-21 | 2005-05-25 | Xrd-工具有限公司 | Diffractometer and method for diffraction analysis |
| JP2005241578A (en) * | 2004-02-27 | 2005-09-08 | Rigaku Corp | X-ray apparatus for measuring crystal orientation, system for holding crystal sample using the same, and method for cutting crystal along constant orientation used therefor |
| CN101776619A (en) * | 2009-12-15 | 2010-07-14 | 丹东奥龙射线仪器有限公司 | X-ray crystal orientation device |
| CN202486072U (en) * | 2012-02-23 | 2012-10-10 | 朱史胜 | Sapphire crystal X-ray automatic orientation material bonding machine |
| CN103257150A (en) * | 2012-08-31 | 2013-08-21 | 云南北方驰宏光电有限公司 | Crystal direction finder for directly measuring deflecting angle in crystal orientation and measurement method thereof |
| CN103267767A (en) * | 2013-04-01 | 2013-08-28 | 合肥晶桥光电材料有限公司 | Multifunctional x-ray direction finder |
| CN204214795U (en) * | 2014-11-28 | 2015-03-18 | 温岭市朗杰机械设备有限公司 | The directed sizing machine of the automatic X-ray of a kind of pole crystal |
| CN208520344U (en) * | 2018-07-23 | 2019-02-19 | 安徽创谱仪器科技有限公司 | Two-dimentional orientation error precision measurement system for thin plate crystals |
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