CN108789135B - Chemical mechanical polishing pads - Google Patents
Chemical mechanical polishing pads Download PDFInfo
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- CN108789135B CN108789135B CN201810511239.3A CN201810511239A CN108789135B CN 108789135 B CN108789135 B CN 108789135B CN 201810511239 A CN201810511239 A CN 201810511239A CN 108789135 B CN108789135 B CN 108789135B
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- chemical mechanical
- mechanical polishing
- polishing pads
- diisocyanate
- curing agent
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Abstract
The present invention provides the chemical mechanical polishing pads that at least one of a kind of suitable semiconductor substrate, optical substrate and magnetic base material carry out surface planarisation processing.Chemical mechanical polishing pads of the present invention include the polishing layer that polyurethane foaming body is constituted, it is performed polymer that the mixture that forms of 1:1~1:4 alicyclic polyisocyanates and aromatic polyisocyanate and polytetramethylene ether diol react that the polishing layer, which includes by mass ratio, with the curing agent and polymeric hollow microsphere for including poly- phthalic acid diglycol esterdiol and polyamine composition；Wherein the mass ratio of the polytetramethylene ether diol and poly- phthalic acid diglycol esterdiol is 20:1~1:20.Polishing pad of the present invention is able to suppress the scratch for being polished material surface, improves removal rate, provides acceptable planarization and degree of imperfection.
Description
Technical field
The present invention relates to CMP art, be specifically related to it is a kind of be suitable for semiconductor substrate, optical substrate and
The chemical mechanical polishing pads of magnetic substrate surface planarization process.
Background technique
It is carried out in high-precision planarization processing and manufacturing in semiconductor substrate, optical substrate and magnetic substrate surface, chemical machine
Tool polishing (CMP) technology is the technology of realization leveling best at present.CMP is will to be polished part in certain pressure
Under be pressed on the polishing pad for being saturated with the polishing fluid being made of sub-micron or nano-abrasive and chemical solution, by means of polished part and throwing
The removal of the chemical reactant formed to polished part surface is completed in the relative motion of light pad by the mechanical friction of abrasive grain, is realized
Ultra-precision surface is processed and obtains the technology of smooth finish surface.
With component develop to fining, complication, high reliability direction and produce to automation, it is rapid, low at
This change direction rapidly strides forward, the demand to CMP consumables (such as polishing pad and polishing fluid) and also growing day by day, the first device of requirement
The fining of part structure and more metallization levels and planarize reliability raising so that the requirement to CMP consumables more
It is high.Polyurethane polishing pad is the most common polishing pad, and conventional polyurethane polishing pad is with wearability is good, polishing efficiency is high, becomes
The advantages that shape is small is able to achieve efficient planarization processing, but when polyurethane polishing pad excessive high hardness, easily deposits in process
It is small deforming, it is easy to scratch polished part surface, brings polishing defect.Current most widely used polyurethane polishing pad is the U.S.
The IC1000 type polishing pad of Rodel company production.
With the reduction of integrated circuit feature size, it is desirable that be polished part and be capable of providing more strictly planar property, in face
Uniformity and polishing efficiency, conventional polyurethane polishing pad are also brought while improving polishing efficiency by improving hardness
More defects, such as scratch become bigger problem, and therefore, this field needs persistently to improve polishing pad, good to provide
Resist degradation performance and good polishing efficiency.
For the benefit of the polyurethane polishing pad example of the generation of consistency and elasticity, raising polishing efficiency, inhibition scratch can arrange
Lift Patent Documents 1 to 3.
In patent document 1 (application number 200980114547.1), a kind of polyurethane foaming body and poly- using this is disclosed
Polishing pad made of urethane foaming body, although the polyurethane foaming body have low-gravity, it may have conducive to polishing pad hardness and
Elasticity.By make containing (A) polyisocyanates, (B) polyalcohol, (C) have 400 molecular weight below polyalcohol series chain extender and
(D) blend composition of water reacts to obtain the polyurethane foaming body, in the blend composition, using MDI as the master of component (A)
Ingredient is wanted to be blended, and when being 100 parts by weight with the total weight of (A), (B) and (C) each component, the blending amount of MDI is 45-70
Parts by weight.
In patent document 2 (application number 201010240775.8), a kind of be suitble to comprising copper, dielectric, resistance is disclosed
The polishing pad that the patterned semiconductor substrate of at least one of barrier and tungsten is polished.Polishing pad includes polymer substrate；
The polymer substrate is the polyurethane reaction product of polyol blend, polyamines or polyamine mixture and toluene di-isocyanate(TDI).
Polyol blend is the polypropylene glycol of 15-77 weight % and the mixture of polytetramethylene ether glycol, which gathers
Propylene glycol and polytetramethylene ether glycol weight ratio are 20:1 to 1:20.Polyamines or polyamine mixture account for 8-50 weight %；First
The monomer of the toluene di-isocyanate(TDI) of monomer or part reaction that phenylene diisocyanate is 15-35 weight %.
In patent document 3 (application number 201480004696.3), a kind of polishing pad is disclosed, has 3 phases point
Polishing layer from structure, polishing velocity is big, and planarization characteristics are excellent, and is able to suppress the generation of scratch.Polishing pad of the invention
With polishing layer, the polishing layer is formed by the reaction solidified body of polyurethane raw material composition, the polyurethane raw material composition
Contain: isocyanate-terminated prepolymer (A), by isocyanate prepolymer composition and the prepolymer material combination containing polyester polyol
Object (a) reaction obtains；Isocyanate-terminated prepolymer (B) by isocyanate prepolymer composition and contains the pre- of polyether alcohol
Polymers feedstock composition (b) reaction obtains；And cahin extension agent, the polyether alcohol include that number-average molecular weight 1000 is below
The polyether alcohol (D) of polyether alcohol (C) and 1900 or more number-average molecular weight, the reaction solidified body is with 3 phases point
From structure.
Summary of the invention
The purpose of the present invention is to solve above-mentioned technical problem, provide a kind of suitable semiconductor substrate, optical substrate and
The chemical mechanical polishing pads of at least one of magnetic base material progress surface planarisation processing.
Polishing pad of the present invention includes the polishing layer that polyurethane foaming body is constituted, and it is 1:1 that the polishing layer, which includes by mass ratio,
The mixture and polytetramethylene ether diol of~1:4 alicyclic polyisocyanates and aromatic polyisocyanate composition react to obtain
Performed polymer, and the curing agent and hollow polymeric that are formed including poly- phthalic acid diglycol esterdiol and polyamine
Object microballoon.
Alicyclic polyisocyanates of the present invention are isophorone diisocyanate (IPDI), isophorone diisocyanate
The dimer of ester, the tripolymer of isophorone diisocyanate, dimerization diisocyanate, (4- hexamethylene is different for 1,1 '-di-2-ethylhexylphosphine oxides
Cyanate) (HMDI), Isosorbide-5-Nitrae-cyclohexane diisocyanate (CHDI), one of the tripolymer of cyclohexane diisocyanate, institute
Stating aromatic polyisocyanate is 2,4- methyl diisocyanate (TDI), 1,5- naphthalene diisocyanate (NDI), 4,4 '-diphenyl
One of methane diisocyanate (MDI).
The mass ratio of alicyclic polyisocyanates and aromatic polyisocyanate of the present invention is 1:1~1:4, preferably
2:3~2:7.
The inventors discovered that being able to suppress the scratch for being polished material surface using alicyclic polyisocyanates, using virtue
Fragrant race's polyisocyanates, can promote removal rate to improve；Control polyisocyanate mixtures in alicyclic polyisocyanates with
Polyalcohol in the mass ratio and polyisocyanate mixtures dosage of aromatic polyisocyanate, and control performed polymer and curing agent
Type and dosage can make both to inhibit the scratch for being polished material surface and improve removal rate to reach desired balance, mention
For acceptable planarization, without increaseing accordingly degree of imperfection.
Polyamine of the present invention be 3,5- diethyltoluene -2,4- diamines and its diethyltoluene -2 isomers 3,5-,
6- diamines.
Polyalcohol polytetramethylene ether diol (PTMEG) of the present invention and poly- phthalic acid diglycol ester two
The mass ratio of alcohol (PDEGPA) is 20:1~1:20, preferably 15:1~1:15.
Contain polymeric hollow microsphere in polishing layer of the present invention, by polymeric hollow microsphere type, shape, straight
Diameter, density, the performance of additive amount adjustment polishing layer.
When the total amount of performed polymer and curing agent of the present invention is 100wt%, the content of polyisocyanates is 20.0 in performed polymer
~40.0wt%, preferably 24.0~36.0wt%.
When the total amount of performed polymer and curing agent of the present invention is 100wt%, the content of polyalcohol is in performed polymer and curing agent
15.0~75.0wt%, preferably 23.0~68.0wt%.
When the total amount of performed polymer and curing agent of the present invention is 100wt%, in curing agent the content of polyamine be 5.0~
45.0wt%, preferably 8.0~41.0wt%.
The present invention passes through control polyalcohol polytetramethylene ether diol (PTMEG) and poly- phthalic acid diglycol
The mass ratio and polyol blends dosage and polyamine dosage of esterdiol (PDEGPA) are conducive to improve removal rate and drop
Low defect degree.
The shore D hardness of polishing pad of the present invention is 45-80D, preferably 48-76D.
When the hardness of polishing pad is lower than 45D, the planarization characteristics of polishing pad are deteriorated；When the hardness of polishing pad is higher than 80D, hold
Easily scratch is generated on the surface for being polished material.
Resin can come using urethane technology well known to fusion method, solwution method etc. in polyurethane foaming body of the present invention
Manufacture, it is contemplated that, it is preferable to use fusion method manufactures situations such as cost, processing, environment.
As the polymerization procedure of polyurethane resin, any one in prepolymer method, one-step method, but in order to ensure height
The transparency, the prepolymer preferably first blocked by organic multiple isocyanate and polyalcohol synthesizing isocyanate base, and make cahin extension agent with
Its prepolymer method reacted.In the case where prepolymer method, in order to be uniformly dispersed polymeric hollow microsphere, preferably in advance will in
Empty polymer microballoon and cahin extension agent mix, then add isocyanate-terminated prepolymer.
In addition, as needed, can add catalyst, foaming agent, stabilizer, pigment, filler, antistatic agent and other
Additive.
The utility model has the advantages that
The present invention prepared by optimization the charging sequence and polyisocyanates of polishing layer, polyalcohol and polyamine it is specific
Raw material and ratio control the mass ratio of alicyclic polyisocyanates and aromatic polyisocyanate in polyisocyanate mixtures,
With polyisocyanate mixtures dosage, inhibits the scratch for being polished material surface, removal rate is promoted to improve.Present invention polishing
Pad is suitable at least one of semiconductor substrate, optical substrate and magnetic base material and carries out surface planarisation processing, and being capable of providing can
The planarization of receiving and degree of imperfection.
Specific embodiment
Hereinafter in addition to being otherwise noted, " part " of record, " % " respectively represent " mass parts ", " quality % ".
Raw material
Polyisocyanates
Isophorone diisocyanate (IPDI)
1,1 '-di-2-ethylhexylphosphine oxides (4- cyclohexyl isocyanate) (HMDI)
1,4- cyclohexane diisocyanate (CHDI)
2,4- methyl diisocyanate (TDI)
1,5- naphthalene diisocyanate (NDI)
4,4 '-methyl diphenylene diisocyanates (MDI)
Polyalcohol
Polytetramethylene ether diol (PTMEG)
Poly- phthalic acid diglycol esterdiol (PDEGPA)
Polyamine
3,5- diethyltoluene -2,4- diamines and its isomers 3,5- diethyltoluene -2,6- diamines (DETDA)
Embodiment 1
By 2,4- methyl diisocyanate (TDI), 1,4- cyclohexane diisocyanate (CHDI), polytetramethylene ether diol
(PTMEG) in 70 DEG C of reaction 3h, then in 80 DEG C of progress vacuum deaerator processing, isocyanate-terminated performed polymer is obtained.
By poly- phthalic acid diglycol esterdiol (PDEGPA), 3,5- diethyltoluene -2,4- diamines and its
Isomers 3,5- diethyltoluene -2,6- diamines (DETDA) are uniformly mixed, then in 80 DEG C of progress vacuum deaerator processing, cooling
To 40 DEG C, addition hollow polymer microsphere (551DE20d60), using high-speed mixer with the revolving speed of 4500rpm
It is uniformly mixed, is subsequently added into above-mentioned isocyanate-terminated prepolymer A and is mixed under the revolving speed of 3500rpm, it is final to mix
Object is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, rises to 100 DEG C by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, be down to 24 DEG C by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, slot processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains embodiment polishing pad sample 1 by adhesive tape.
Embodiment 2~12
Using the method for embodiment 1, it is micro- to change polyisocyanates type/dosage, polyalcohol dosage, polyamine and polymer
Ball dosage obtains embodiment polishing pad sample 2~12.
Comparative example 1
By 2,4- methyl diisocyanate (TDI), 1,4- cyclohexane diisocyanate (CHDI), polytetramethylene ether diol
(PTMEG), then poly- phthalic acid diglycol esterdiol (PDEGPA) is depressurized at 75 DEG C of reaction 3h at 80 DEG C
Deaeration processing, obtains isocyanate-terminated performed polymer.
By 3,5- diethyltoluene -2,4- diamines and its isomers 3,5- diethyltoluene -2,6- diamines (DETDA) 80
DEG C carry out vacuum deaerator processing, be cooled to 40 DEG C, be added hollow polymer microsphere (551DE20d60), using height
Fast mixing machine is uniformly mixed with the revolving speed of 4500rpm, is subsequently added into above-mentioned isocyanate-terminated prepolymer A 3500rpm's
It is mixed under revolving speed, final mixture is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, rises to 100 DEG C by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, be down to 24 DEG C by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, slot processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains comparative example polishing pad sample 1 by adhesive tape.
Comparative example 2
By 4,4 '-methyl diphenylene diisocyanates (MDI), 1,4- cyclohexane diisocyanate (CHDI), poly- four methylene
Base ether glycol (PTMEG), then in 80 DEG C of progress vacuum deaerator processing, obtains isocyanate-terminated pre-polymerization in 70 DEG C of reaction 3h
Body.
By 3,5- diethyltoluene -2,4- diamines and its isomers 3,5- diethyltoluene -2,6- diamines (DETDA) 80
DEG C carry out vacuum deaerator processing, be cooled to 40 DEG C, be added hollow polymer microsphere (551DE20d60), using height
Fast mixing machine is uniformly mixed with the revolving speed of 4500rpm, is subsequently added into above-mentioned isocyanate-terminated prepolymer A 3500rpm's
It is mixed under revolving speed, final mixture is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, rises to 100 DEG C by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, be down to 24 DEG C by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, slot processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains comparative example polishing pad sample 2 by adhesive tape.
Comparative example 3
By 2,4- methyl diisocyanate (TDI), polytetramethylene ether diol (PTMEG) in 70 DEG C of reaction 3h, then exist
80 DEG C of progress vacuum deaerator processing, obtain isocyanate-terminated performed polymer.
By poly- phthalic acid diglycol esterdiol (PDEGPA), 3,5- diethyltoluene -2,4- diamines and its
Isomers 3,5- diethyltoluene -2,6- diamines (DETDA) are uniformly mixed, then in 80 DEG C of progress vacuum deaerator processing, cooling
To 40 DEG C, addition hollow polymer microsphere (551DE20d60), using high-speed mixer with the revolving speed of 4500rpm
It is uniformly mixed, is subsequently added into above-mentioned isocyanate-terminated prepolymer A and is mixed under the revolving speed of 3500rpm, it is final to mix
Object is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, rises to 100 DEG C by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, be down to 24 DEG C by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, slot processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains comparative example polishing pad sample 3 by adhesive tape.
Comparative example 4
By 4,4 '-methyl diphenylene diisocyanates (MDI), polytetramethylene ether diol (PTMEG) in 70 DEG C of reaction 3h,
Then in 80 DEG C of progress vacuum deaerator processing, isocyanate-terminated performed polymer is obtained.
By poly- phthalic acid diglycol esterdiol (PDEGPA), 3,5- diethyltoluene -2,4- diamines and its
Isomers 3,5- diethyltoluene -2,6- diamines (DETDA) are uniformly mixed, then in 80 DEG C of progress vacuum deaerator processing, cooling
To 40 DEG C, addition hollow polymer microsphere (551DE20d60), using high-speed mixer with the revolving speed of 4500rpm
It is uniformly mixed, is subsequently added into above-mentioned isocyanate-terminated prepolymer A and is mixed under the revolving speed of 3500rpm, it is final to mix
Object is transferred in mold, makes its gel 30min.
Mold is placed in curing oven, rises to 100 DEG C by environment temperature in 0.5h, it is solid that 16h is carried out at 100 DEG C
Change, be down to 24 DEG C by 100 DEG C in 2.0h, obtains polyurethane foaming body block.
Polyurethane foaming body block is sliced, is polished, is cut, slot processing obtains polishing layer.It is attached at the polishing layer back side two-sided
Buffer substrate tablet is fitted on the double faced adhesive tape using laminating machine, obtains comparative example polishing pad sample 4 by adhesive tape.
Embodiment and the raw materials used type of comparative sample and formula are shown in Table 1.
Determination of Hardness
Hardness is measured referring to Unite States Standard ASTM D2240 using ASKER D type hardness tester meter.
The evaluation of polishing performance
Using Applied Materials, Inc.'sThe polishing pad of polishing machine testing example uses
Platen revolving speed be 93rpm, chip support head revolving speed be 87rpm, lower pressure be 4psi, TEOS and SiN chip is polished.
The removal efficiency that polishing pad is tested using Nano SpecII film thickness instrument uses KLA-Tencor SP2 couple
Polishing defect is detected, and polishing fluid used is Asahi CES333F, is used in mixed way with deionized water with 1:3, is used Saesol
C4 conditioner discs carry out diamond finishing to pad interface by in-situ conditioning technique.
The evaluation of planarization characteristics
The evaluation of planarization characteristics is carried out using following methods: 0.5 μm of thermal oxide is deposited on 12 inches of silicon wafer
After film, the patterning of L/S (lines and space)=25 μm/5 μm and L/S=5 μm/25 μm is carried out.Then 1 μm is deposited
Oxidation film (TEOS), make have initial stage difference in height be 0.5 μm pattern chip.And under the above conditions to the chip into
Row polishing, when whole height difference isWhen following, the grinding amount by measuring 25 μm of gaps bottom is evaluated.Generally recognize
For the value of grinding amount is smaller, and planarization characteristics are more excellent.
The evaluation of scratch
12 8 inches of dummy wafer is polished under the above conditions, then, to deposited with a thickness of
Heat oxide film 12 inch wafers carry out 1 minute polish.Then, the surface defects detection manufactured using KLA-Tencor company
Device (Surfscan SP2), measures on chip after a polish that there are how many 0.16 μm or more of streaks.
1 embodiment of table and comparative example raw material type and formula
The physical data and polishing effect of mainstream polishing pad IC 1000 by embodiment and comparative example and in the market compares
Compared with specific test data is shown in Table 2.
2 embodiment of table and comparative example and IC1000 test data
From table 2 it can be seen that polishing pad prepared by embodiment 1~12 is in TEOS removal rate, SiN removal rate is total to lack
It falling into, performance is stablized in planarization and scratch number, it can satisfy market and customer demand, and polishing pad prepared by comparative example 1~4
In TEOS removal rate, SiN removal rate, overall defect planarizes and is obviously inferior to embodiment 1 at least two in scratch number
~12, it is not able to satisfy market and the demand of client.Due to being free of polyalcohol, comparative example 3 in the curing agent reactant of comparative example 1 and 2
With in 4 prepolymer reaction objects be free of alicyclic polyisocyanates, it is seen that in curing agent reactant contain polyalcohol, prepolymer reaction object
In contain alicyclic polyisocyanates, beneficial effect is brought to polishing pad comprehensive performance.
Polishing pad prepared by the embodiment of the present invention 1~12 can reach on TEOS and SiN chip greater than IC's 1000
Removal rate, and overall defect significantly reduces, planarizes excellent, and scratch number is few, shows that polishing pad prepared by the present invention can be with
Obtain more preferably comprehensive performance.
Claims (7)
1. a kind of chemical mechanical polishing pads are suitble to carry out at least one of semiconductor substrate, optical substrate and magnetic base material
Surface planarisation processing, the polishing pad include the polishing layer that polyurethane foaming body is constituted, which is characterized in that the polishing layer packet
It includes:
Performed polymer, by mass ratio be the mixture that forms of 1:1~1:4 alicyclic polyisocyanates and aromatic polyisocyanate and
Polytetramethylene ether diol reacts to obtain,
Curing agent, the mixture including poly- phthalic acid diglycol esterdiol and polyamine composition,
And polymeric hollow microsphere；
And first polymeric hollow microsphere and curing agent are mixed, then add performed polymer；
The mass ratio of the polytetramethylene ether diol and poly- phthalic acid diglycol esterdiol is 20:1~1:20.
2. chemical mechanical polishing pads as described in claim 1, which is characterized in that it is 2:3 that the polishing layer, which includes by mass ratio,
The mixture and polytetramethylene ether diol of~2:7 alicyclic polyisocyanates and aromatic polyisocyanate composition react to obtain
Performed polymer, and the curing agent and hollow polymeric that are formed including poly- phthalic acid diglycol esterdiol and polyamine
Object microballoon.
3. chemical mechanical polishing pads as described in claim 1, which is characterized in that the alicyclic polyisocyanates are different Fo Er
Ketone diisocyanate, the dimer of isophorone diisocyanate, the tripolymer of isophorone diisocyanate, two isocyanide of dimerization
Acid esters, 1,1 '-di-2-ethylhexylphosphine oxides (4- cyclohexyl isocyanate), 1,4- cyclohexane diisocyanate, cyclohexane diisocyanate
One of tripolymer, the aromatic polyisocyanate be 2,4- methyl diisocyanate, 1,5- naphthalene diisocyanate, 4,
One of 4 '-methyl diphenylene diisocyanates.
4. chemical mechanical polishing pads as described in claim 1, which is characterized in that the polyamine is 3,5- diethyltoluene-
2,4- diamines and its isomers 3,5- diethyltoluene -2,6- diamines.
5. chemical mechanical polishing pads as described in claim 1, which is characterized in that the polytetramethylene ether diol and poly- adjacent benzene
The mass ratio of dioctyl phthalate diglycol esterdiol is 15:1~1:15.
6. chemical mechanical polishing pads as described in claim 1, which is characterized in that the total amount of performed polymer and curing agent is
When 100wt%, the content of polyisocyanates is 20.0~40.0wt% in performed polymer, and the content of polyamine is 5.0 in curing agent
~45.0wt%.
7. chemical mechanical polishing pads as claimed in any one of claims 1 to 6, which is characterized in that the shore D of the polishing pad is hard
Degree is 45-80D.
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| CN111793186A (en) * | 2020-06-30 | 2020-10-20 | 山东一诺威聚氨酯股份有限公司 | Preparation method of polyurethane polishing pad layer |
| CN112223108A (en) * | 2020-08-31 | 2021-01-15 | 东莞金太阳研磨股份有限公司 | Formula and manufacturing method of diamond grinding pad |
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| US20010050268A1 (en) * | 2000-05-23 | 2001-12-13 | Reinhardt Heinz F. | Polishing pad of a polyurethane of propane diol |
| CN103862365B (en) * | 2014-01-21 | 2016-05-04 | 湖北鼎龙化学股份有限公司 | polyurethane material polishing pad and preparation method thereof |
| JP6539910B2 (en) * | 2015-04-03 | 2019-07-10 | 富士紡ホールディングス株式会社 | Polishing pad and method of manufacturing the same |
| CN105171593B (en) * | 2015-08-11 | 2017-12-26 | 湖北鼎龙控股股份有限公司 | Weatherability chemical mechanical polishing pads |
| CN106046313A (en) * | 2016-06-03 | 2016-10-26 | 湖北鼎龙化学股份有限公司 | Chemical-mechanical polishing pad, buffer layer and preparation method of buffer layer |
| CN106891246B (en) * | 2017-03-30 | 2019-05-07 | 湖北鼎龙控股股份有限公司 | It is a kind of for semiconductor, the chemical mechanical polishing pads of optical material and magnetic material surface planarisation |
| CN106965100A (en) * | 2017-04-19 | 2017-07-21 | 台山市远鹏研磨科技有限公司 | A kind of wet type polishing pad and preparation method thereof |
| CN108047420B (en) * | 2017-11-28 | 2021-01-12 | 湖北鼎龙控股股份有限公司 | Polyurethane polishing layer and preparation method thereof |
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