CN102310366B - Chemical mechanical polishing pad with low-defect overall window - Google Patents
Chemical mechanical polishing pad with low-defect overall window Download PDFInfo
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- CN102310366B CN102310366B CN201010231569.0A CN201010231569A CN102310366B CN 102310366 B CN102310366 B CN 102310366B CN 201010231569 A CN201010231569 A CN 201010231569A CN 102310366 B CN102310366 B CN 102310366B
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Abstract
The invention discloses a chemical mechanical polishing pad. The chemical mechanical polishing pad comprises a polishing layer, wherein the polishing layer comprises an overall window and a polishing surface; the polishing surface is suitable to be used for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate; and the preparation of the overall window provides improved defect performance in a polishing process. The invention also provides a method for polishing the substrate by using the chemical mechanical polishing pad.
Description
Technical field
The present invention relates generally to chemically mechanical polishing field.Particularly, the present invention relates to have the chemical mechanical polishing pads of low defect integral window.The invention still further relates to the chemical mechanical polishing pads that a kind of use has low defect integral window and substrate is carried out to the method for chemically mechanical polishing.
Background technology
In the manufacture of integrated circuit and other electronic device, need to be on the surface of semiconductor wafer conductive material, semi-conducting material and the dielectric material of deposit multilayer, or these material layers are removed from the surface of semiconductor wafer.Can use the thin layer of many kinds of techniques of deposition conductive materials, semi-conducting material and dielectric materials.In modern wafer processing, conventional deposition technique comprises physical vapour deposition (PVD) (PVD) (also referred to as sputter), chemical vapour deposition (CVD) (CVD), plasma enhanced chemical vapor deposition (PECVD) and galvanoplastic (ECP) etc.
When material layer is deposited successively and removes, it is uneven that the uppermost surface of wafer becomes.For example, because semiconductor machining subsequently (metallization) needs wafer to have smooth surface, so wafer needs complanation.Complanation can be used to remove does not wish the surface topography and the blemish that occur, rough surface for example, agglomeration material, lattice damage, layer or the material of cut and pollution.
Chemical-mechanical planarization, i.e. chemically mechanical polishing (CMP) is a kind of routine techniques that is used for the substrate of semiconductor wafer and so on to carry out complanation.In conventional CMP, wafer is arranged on bracket component, be arranged on the position contacting with polishing pad in CMP equipment.Described bracket component, for wafer provides the pressure that can control, is pressed to polishing pad.By extraneous driving force, make polishing pad for example, with respect to movement of wafers (rotating).Meanwhile, between wafer and polishing pad, provide Chemical composition that (" slurries ") or other polishing solution.Therefore,, by chemical action and the mechanism of pad interface and slurries, polishing is carried out in the surface of wafer and make its complanation.
The problem existing in chemically mechanical polishing is to determine when the required degree that substrate is polished to.People have developed the method that original position is determined polishing end point.Such method is used a laser interferometer, measures the size of substrate with the light that laser instrument produces.Therefore, people have developed the chemical mechanical polishing pads with some features, and these features are convenient to determine by optical method the size characteristic of substrate.For example, United States Patent (USP) the 5th, has disclosed a kind of polishing pad 605, No. 760, and wherein at least a portion of polishing pad is transmission to the laser of certain wave-length coverage.In one embodiment, described polishing pad comprises the transparent window film being arranged in the opaque polishing pad of other parts.Described window can be arranged on spillikin or the insert of the transparent polymer material in molding polishing pad.Described spillikin or insert can be the inserts (being integral window) being molded in described polishing pad, or can, after molded operation, be fit into (being insert window in place) in the otch in polishing pad.
Polishing medium is easily leaked in the interface of the conventional chemical mechanical polishing pad that comprises insert window in place between insert window in place and the remainder of chemical mechanical polishing pads.The polishing medium of this leakage can infiltrate through in polishing layer, intermediate layer or subpad layer, causes for example constrictive area differentiation of polishing layer, causes polishing defect to increase.The polishing medium leaking also can permeate by polishing pad, and polissoir is caused to damage.
With respect to insert window in place, the conventional chemical mechanical polishing pad that comprises integral window easily increases polishing defect, this is that this window can be outwardly from polishing pad, causes polishing defect (for example polished substrate being caused to cut) because of extending the service time along with polishing pad.
Therefore, people need a kind of improved chemical mechanical polishing pads that comprises window, and it can reduce the leakage problem that insert window in place brings conventionally, and the polishing defect problem that has of conventional integral window.
Summary of the invention
In one aspect of the invention, provide a kind of chemical mechanical polishing pads, it comprises: polishing layer, and this polishing layer comprises polished surface and integral window; Described integral window is combined in described polishing layer; Described integral window is the polyurethane reaction product of curing agent and isocyanate-terminated prepolymer polyalcohol; Described curing agent comprises curing agent amine moiety, this curing agent amine moiety can with contained unreacted NCO partial reaction in described isocyanate-terminated prepolymer polyalcohol, form integral window; Amine moiety and the unreacted NCO stoichiometric proportion partly of take provided described curing agent and isocyanate-terminated prepolymer polyalcohol as 1: 1 to 1: 1.25; The porosity < 0.1 volume % of described integral window; The compressive deformation of described integral window is 5-25%; Wherein, described polished surface is applicable to for carrying out polishing to being selected from the substrate of magnetic substrate, optical base-substrate and semiconductor chip.
In another aspect of the present invention, a kind of method of carrying out chemically mechanical polishing to being selected from the substrate of magnetic substrate, optical base-substrate and semiconductor chip of being used for is provided, described method comprises: chemical-mechanical polisher is provided, and this equipment comprises platen; At least one substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is provided; Select chemical mechanical polishing pads, described polishing pad comprises polishing layer, and described polishing layer comprises the integral window being formed at wherein, and the compressive deformation of described integral window is 5-25%; Described chemical mechanical polishing pads is arranged on described platen; With the polished surface of described polishing layer, described at least one kind substrate carried out to polishing.
In another aspect of the present invention, a kind of method of carrying out chemically mechanical polishing to being selected from the substrate of magnetic substrate, optical base-substrate and semiconductor chip of being used for is provided, described method comprises: chemical-mechanical polisher is provided, and this equipment comprises platen; At least one substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is provided; Chemical mechanical polishing pads described in selection claim 1; Described chemical mechanical polishing pads is arranged on described platen; With the polished surface of described polishing layer, described at least one substrate carried out to polishing.
The specific embodiment
Herein and the term " polishing medium " using in appended claims comprise containing the polishing fluid of particle and do not contain the polishing solution of particle, such as without abrasive material and reactive fluid polishing fluid.
The term using in this paper and appended claims " poly-(ammonia ester) " comprising: (a) by (i) isocyanates, react the polyurethane forming with (ii) polyalcohol (comprising glycol); And (b) by (i) isocyanates and (ii) polyalcohol (comprising glycol) and (iii) the gathering of composite reaction formation (ammonia ester) of water, amine (comprising diamines and polyamines) or water and amine (comprising diamines and polyamines).
Chemical mechanical polishing pads of the present invention comprises polishing layer, and this polishing layer comprises polished surface and integral window; Described integral window is combined in described polishing layer; Described integral window is the polyurethane reaction product of curing agent and isocyanate-terminated prepolymer polyalcohol; Described curing agent comprises curing agent amine moiety, this curing agent amine moiety can with contained unreacted NCO partial reaction in described isocyanate-terminated prepolymer polyalcohol, form integral window; Amine moiety and the unreacted NCO stoichiometric proportion partly of take provided described and solidifies and isocyanate-terminated prepolymer polyalcohol as 1: 1 to 1: 1.25; The porosity < 10.0 volume % of described integral window, preferred < 0.1 volume %, more preferably 0.000001 to < 0.1 volume %, be more preferably 0.000001 to < 0.9 volume %, 0.000001-0.05 volume % most preferably, the compressive deformation of described integral window is 5-25%, be preferably 5-20%, more preferably 5-15%, is more preferably 5-10%, most preferably is 5-8%; Wherein, described polished surface is applicable to for carrying out polishing to being selected from the substrate of magnetic substrate, optical base-substrate and semiconductor chip.
Preferably, described curing agent and isocyanate-terminated prepolymer polyalcohol provide with suitable ratio, make NH
2with unreacted NCO stoichiometric proportion be 1: 1 to 1: 1.25, be preferably 1: 1 to 1: 1.15, more preferably 1: 1 to 1: 1.10.Described stoichiometric relationship can directly obtain by the stoichiometry content of supplying raw materials, or by having a mind to make NCO react or make it contact external moisture with water, reacts away a part of NCO, thereby indirectly obtain.
Isocyanate-terminated prepolymer polyalcohol comprises for example product of polyalcohol and multifunctional aromatic isocyanate.Suitable polyalcohol comprises for example PPG; Polycarbonate polyol; PEPA; Polycaprolactone polyol; Ethylene glycol; 1,2-PD; 1,3-PD; 1,2-butanediol; 1,3-BDO; 2-methyl isophthalic acid, ammediol; BDO; Neopentyl glycol; 1,5-PD; 3-methyl isophthalic acid, 5-pentanediol; 1,6-hexylene glycol; Diethylene glycol (DEG); DPG; Tripropylene glycol, and their mixture.Preferred polyalcohol comprises polytetramethylene ether diol [PTMEG]; Polytrimethylene ether glycol [PPG]; Ester group polyol (for example adipic acid second diester or adipic acid fourth diester); Their copolymer and mixture.The example of suitable multifunctional aromatic isocyanate comprises 2,4-toluene di-isocyanate(TDI), 2,6-toluene di-isocyanate(TDI), 4,4 '-methyl diphenylene diisocyanate, naphthalene-1,5-vulcabond, tolidine vulcabond, PPDI, XDI and their mixture.Preferably, described multifunctional aromatic isocyanate comprises and is less than 20 % by weight, is preferably less than 15 % by weight, is most preferably less than the aliphatic isocyanate of 12 % by weight, for example HMDI; IPDI and cyclohexane diisocyanate.Preferably, described isocyanate-terminated prepolymer polyalcohol comprises 8.75-9.40 % by weight, preferably 8.90-9.30 % by weight, the more preferably unreacted NCO part of 9.00-9.25 % by weight.Preferably, described isocyanate-terminated prepolymer polyalcohol comprises isocyanate-terminated polytetramethylene ether diol.More preferably, described isocyanate-terminated prepolymer polyalcohol comprises isocyanate-terminated polytetramethylene ether diol; The unreacted NCO part that wherein said isocyanate-terminated prepolymer polytetramethylene ether diol comprises 8.90-9.30 % by weight.Most preferably, described isocyanate-terminated prepolymer polyalcohol comprises isocyanate-terminated polytetramethylene ether diol; The unreacted NCO part that wherein said isocyanate-terminated prepolymer polytetramethylene ether diol comprises 9.00-9.25 % by weight.
Curing agent for example comprises 4,4 '-methylene-bis-o-chloraniline [MBCA], 4, and 4 '-methylene-bis--(3-chloro-2,6-diethyl aniline) is (MCDEA); Dimethythiotoluene diamine; Two p-aminobenzoic acid-1,3-PD ester; PolyTHF two p-aminobenzoic acid esters; PolyTHF list p-aminobenzoic acid ester; PPOX two p-aminobenzoic acid esters; PPOX list p-aminobenzoic acid ester; 1,2-bis-(2-aminobenzene-thio) ethane; 4,4 '-methylene-diphenylamines; Diethyl toluene diamine; The 5-tert-butyl group-2,4-toluenediamine and the 3-tert-butyl group-2,6-toluenediamine; 5-tertiary pentyl-2,4-toluenediamine and 3-tertiary pentyl-2,6-toluenediamine and chlorotoluene diamines, and their mixture.Preferred described curing agent is MBCA.
When preparing integral window, preferably raw material and stoichiometry are selected, making the compressive deformation of the integral window material that makes is 5-25%, more preferably 5-20%, is more preferably 5-15%, also 5-10% more preferably, again more preferably 5% to being less than 10%, most preferably be 5-8%, above compressive deformation is according to ASTM D395-03 method A, at 70 ℃ and 22 hours, under condition, records.Optionally, can use the integral window of independent blend step manufacture based on urethane polymer, avoid using prepolymer.
The light transmittance that described integral window is the light of 670 nanometers to wavelength is preferably selected from 20-70%, the scope of 20-50% and 30-50%.
Chemical mechanical polishing pads of the present invention optionally also comprises the basalis with polishing layer adjacency.Can optionally use adhesive that described polishing layer and basalis are coupled together.Described adhesive can be selected from contact adhesive, hotmelt, contact adhesive and their combination.In some embodiments, described adhesive is hotmelt.In some embodiments, described adhesive is contact adhesive.In some embodiments, described adhesive is contact adhesive.
Chemical mechanical polishing pads of the present invention optionally also comprises basalis, and and described polishing layer and basalis adjacency at least one the other layer between described polishing layer and basalis.Can optionally use adhesive that each layer linked together.Described adhesive can be selected from contact adhesive, hotmelt, contact adhesive and their combination.In some embodiments, described adhesive is hotmelt.In some embodiments, described adhesive is contact adhesive.In some embodiments, described adhesive is contact adhesive.
Chemical mechanical polishing pads of the present invention is preferably applicable to the platen adjacency with polishing machine.Optional being applicable to, is used at least one in contact adhesive and vacuum, and chemical mechanical polishing pads of the present invention is fixed on described platen.
The polished surface of the polishing layer of chemical mechanical polishing pads of the present invention optionally has at least one in macrostructure (macrotexture) and microstructure (microtexture), to promote the polishing of substrate.Preferably, described polished surface has macrostructure, and described macrostructure is used for alleviating at least one of following situation: skid, affect polishing medium rigidity, minimizing edge effect and the transfer of promotion polishing chip mobile, that change polishing layer and leave the region between polished surface and substrate.
The polished surface of the polishing layer of chemical mechanical polishing pads of the present invention optionally has at least one the macrostructure in the perforation of being selected from and groove.Optionally, described perforation can partly or entirely run through polishing layer thickness from polished surface.Optionally, groove is arranged on polished surface, while making in polishing process polishing pad rotate, has at least a groove to skim over substrate.Optionally, described groove is selected from crooked groove, straight-line groove and combination thereof.Optionally, the degree of depth >=10 mil of described groove; Be preferably 10-150 mil.Optionally, described groove forms groove pattern, and described groove pattern comprises at least two grooves with following characteristics combination: be selected from >=10 mils of the degree of depth, >=15 mils and 15-150 mil; Be selected from >=10 mils of width and 10-100 mil; Be selected from >=30 mils of slot pitch, >=50 mils, 50-200 mil, 70-200 mil, and 90-200 mil.
The method that is used for carrying out being selected from the substrate of magnetic substrate, optical base-substrate and semiconductor chip chemically mechanical polishing of the present invention comprises: chemical-mechanical polisher is provided, and this equipment comprises platen; At least one substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is provided; Select chemical mechanical polishing pads, described polishing pad comprises polishing layer, and described polishing layer comprises the integral window being formed at wherein, and the compressive deformation of described integral window is 5-25%, preferred 5-20%, and more preferably 5-15%, is more preferably 5-10%, also more preferably 5-8%; Described chemical mechanical polishing pads is arranged on described platen; With the polished surface of described polishing layer, described at least one substrate carried out to polishing.Preferably, after polishing pad of the present invention carries out the polishing of 10 hours to substrate under the polish temperature of 40 ℃, the integral window in this chemical mechanical polishing pads from the polished surface of polishing layer outwardly≤50 microns, more preferably 0-50 micron, most preferably 0-40 micron.
To in following examples, describe some embodiments of the present invention in detail now.
Embodiment
window piece material
By following steps, prepare window piece material, be used for being attached in chemical mechanical polishing layer window as a whole.The curing agent of the various amounts shown in table 1 (being MBCA) and isocyanate-terminated prepolymer the polyalcohol L325 of Kai Mu Tula company (Chemtura) (purchased from) are mixed, add in mould.Then make the material in mould solidify 18 hours in baking oven.The Temperature Setting of baking oven, at 93 ℃, heats 20 minutes; Then be set in 104 ℃, heat 15 hours 40 minutes; Then be cooled to 21 ℃, then process last 2 hours.Then described window piece material is cut into insert, so that be incorporated into by conventional methods in polishing bedder piece.
table 1
| Embodiment | MBCA (% by weight) | L325 (% by weight) | Stoichiometric proportion |
| (NH 2 /NCO) | |||
| Window comparative example 1 | 18.4 | 81.6 | 0.78∶1.00 |
| Window comparative example 2 | 21.5 | 78.5 | 0.95∶1.00 |
| Window 3 | 23.2 | 76.8 | 1.00∶1.05 |
compressive deformation test
The sample of preparing as mentioned above window piece material, tests according to the step of ASTM Method D395-03 method A, measures compressive deformation.These experiments the results are shown in table 2.
table 2
| Embodiment | The compressive deformation recording (inch %) |
| Window comparative example 1-1 | 1.9 |
| Window comparative example 1-2 | 2.0 |
| Window comparative example 1-3 | 2.3 |
| Window comparative example 2-1 | 4.6 |
| Window comparative example 2-2 | 4.3 |
| Window 3-1 | 6.1 |
| Window 3-2 | 5.8 |
| Window 3-3 | 7.4 |
polishing experiments
polishing pad
Use the following sample of identical polishing layer formula preparation: (a) contrast polishing pad, it comprises the conventional integral window composition shown in the window comparative example 1 of above table 1, NH
2with the stoichiometric proportion of NCO be 0.78: 1.00, (b) polishing pad, it comprises that the integral window of the present invention shown in the embodiment 3 of above table 1 forms, wherein NH
2with the stoichiometric proportion of NCO be 1: 1.05.Described have the contrast polishing pad of custom window formula and comprise that the polishing pad of window formula of the present invention is all 50 mil thick, has the circular groove that the degree of depth is 15 mils.Two kinds of polishing layer formulation are all layered in the Suba IV purchased from ROHM AND HAAS electronic material CMP Co., Ltd (Rohm and Haas Electronic Materials CMP Inc)
tMon subpad material.
polishing condition
Use Applied Materials
millimeter polishing machine and polishing pad mentioned above carry out polishing to copper cover wafers under the downward active force condition of the polishings of 20.7 kPas; The chemical-mechanical polishing compositions using is that flow velocity is 200 ml/min purchased from the EPL2361 of Ai Puke Materials Co., Ltd (Epoch Material Co., Ltd); Platen rotating speed 93rpm; Support rotating speed 87rpm; Use Kinik
aD3CG 181060 trimmers, carry out in-situ conditioning completely with the downward finishing active forces of 48.3 kPas and end after 20 minutes, end after then repairing 10 minutes under the downward active force of 62.1 kPas, then with the downward active force of 48.3 kPas, repair.Use KLA TencorSP-1 check utensil, not having figuratum wafer surface after 0 hour, 2.5 hours, 5 hours, 7.5 hours and polishing in 10 hours, measure the cut number on copper cover wafers.These cuts are counted testing result and are listed in table 3.
table 3
window protrudes
In addition, carry out the continuous wafer polishing of 10 hours under described polishing condition after, on polished surface, measured integral window profile, to determine that window is from polished surface outwardly degree arbitrarily.The average protrusion of the integral window material of comparative example window 1 is greater than 100 microns, and the average protrusion of the integral window material of embodiment window 3 is less than 40 microns.
Claims (8)
1. a chemical mechanical polishing pads, it comprises:
Polishing layer, it comprises polished surface and integral window;
Described integral window becomes one in described polishing layer;
Described integral window is the polyurethane reaction product of curing agent and isocyanate-terminated prepolymer polyalcohol;
Described curing agent is selected from 4,4 '-methylene-bis-o-chloraniline, 4,4 '-methylene-bis--(3-chloro-2,6-diethyl aniline); Dimethythiotoluene diamine; Two p-aminobenzoic acid-1,3-PD ester; PolyTHF two p-aminobenzoic acid esters; PolyTHF list p-aminobenzoic acid ester; PPOX two p-aminobenzoic acid esters; PPOX list p-aminobenzoic acid ester; 1,2-bis-(2-aminobenzene-thio) ethane; 4,4 '-methylene-diphenylamines; Diethyl toluene diamine; The 5-tert-butyl group-2,4-toluenediamine; The 3-tert-butyl group-2,6-toluenediamine; 5-tertiary pentyl-2,4-toluenediamine; 3-tertiary pentyl-2,6-toluenediamine; Chlorotoluene diamines, and their mixture;
Described isocyanate-terminated prepolymer polyalcohol is the product of polyalcohol and multifunctional aromatic isocyanate;
Described polyalcohol is selected from polytetramethylene ether diol; Polytrimethylene ether glycol; Ester group polyol; Their copolymer and mixture;
Described multifunctional aromatic isocyanate is selected from 2,4-toluene di-isocyanate(TDI), 2,6-toluene di-isocyanate(TDI), 4,4'-methyl diphenylene diisocyanate, naphthalene-1,5-vulcabond, tolidine vulcabond, PPDI, XDI and their mixture;
Described curing agent comprises curing agent amine moiety, this curing agent amine moiety can with contained unreacted NCO partial reaction in described isocyanate-terminated prepolymer polyalcohol, form described integral window;
The consumption that amine moiety and the unreacted NCO stoichiometric proportion partly of take is 1:1 to 1:1.25 provides described curing agent and described isocyanate-terminated prepolymer polyalcohol;
The porosity <0.1 volume % of described integral window;
The compressive deformation of described integral window is 5-25%;
Wherein, described polished surface is applicable to for carrying out polishing to being selected from the substrate of magnetic substrate, optical base-substrate and semiconductor chip.
2. chemical mechanical polishing pads as claimed in claim 1, is characterized in that, described integral window has elliptic cross-section within being parallel to the plane of described polished surface.
3. chemical mechanical polishing pads as claimed in claim 1, is characterized in that, described isocyanate-terminated prepolymer polyalcohol comprises isocyanate-terminated polytetramethylene ether diol.
4. chemical mechanical polishing pads as claimed in claim 1, is characterized in that, the unreacted NCO part that described isocyanate-terminated prepolymer polyalcohol comprises 8.75-9.40 % by weight.
5. chemical mechanical polishing pads as claimed in claim 3, is characterized in that, the unreacted NCO part that described isocyanate-terminated polytetramethylene ether diol comprises 9.00-9.25 % by weight.
6. chemical mechanical polishing pads as claimed in claim 1, is characterized in that, described integral window is 20-50% at the light transmittance of 670 nanometers.
7. be used for a method of carrying out chemically mechanical polishing to being selected from the substrate of magnetic substrate, optical base-substrate and semiconductor chip, the method comprises:
Chemical-mechanical polisher is provided, and this equipment comprises platen;
At least one substrate being selected from magnetic substrate, optical base-substrate and semiconductor chip is provided;
Select chemical mechanical polishing pads as claimed in claim 1;
Described chemical mechanical polishing pads is arranged on described platen;
With the polished surface of described polishing layer, described at least one substrate carried out to polishing.
8. method as claimed in claim 7, is characterized in that, after substrate being carried out to the polishing of 10 hours, integral window from the polished surface of polishing layer outwardly≤50 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010231569.0A CN102310366B (en) | 2010-07-08 | 2010-07-08 | Chemical mechanical polishing pad with low-defect overall window |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010231569.0A CN102310366B (en) | 2010-07-08 | 2010-07-08 | Chemical mechanical polishing pad with low-defect overall window |
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|---|---|
| CN102310366A CN102310366A (en) | 2012-01-11 |
| CN102310366B true CN102310366B (en) | 2014-03-05 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8980749B1 (en) * | 2013-10-24 | 2015-03-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing silicon wafers |
| US9314897B2 (en) * | 2014-04-29 | 2016-04-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
| US9333620B2 (en) * | 2014-04-29 | 2016-05-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with clear endpoint detection window |
| US20150375361A1 (en) * | 2014-06-25 | 2015-12-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
| US9259821B2 (en) * | 2014-06-25 | 2016-02-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing layer formulation with conditioning tolerance |
| US20180345449A1 (en) * | 2017-06-06 | 2018-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pads for improved removal rate and planarization |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0824995A1 (en) * | 1996-08-16 | 1998-02-25 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US6387312B1 (en) * | 1999-08-17 | 2002-05-14 | Rodel Holdings Inc. | Molding a polishing pad having integral window |
| CN1425190A (en) * | 2000-01-25 | 2003-06-18 | 株式会社尼康 | Monitor, method of monitoring, polishing device, and method of manufacturing semiconductor wafer |
| CN1622289A (en) * | 2003-11-25 | 2005-06-01 | Cmp罗姆和哈斯电子材料控股公司 | Polishing pad with high optical transmission window |
-
2010
- 2010-07-08 CN CN201010231569.0A patent/CN102310366B/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0824995A1 (en) * | 1996-08-16 | 1998-02-25 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US6387312B1 (en) * | 1999-08-17 | 2002-05-14 | Rodel Holdings Inc. | Molding a polishing pad having integral window |
| CN1425190A (en) * | 2000-01-25 | 2003-06-18 | 株式会社尼康 | Monitor, method of monitoring, polishing device, and method of manufacturing semiconductor wafer |
| CN1622289A (en) * | 2003-11-25 | 2005-06-01 | Cmp罗姆和哈斯电子材料控股公司 | Polishing pad with high optical transmission window |
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Decision date of declaring invalidation: 20210203 Decision number of declaring invalidation: 48108 Granted publication date: 20140305 |