CN102310366A - Chemical mechanical polishing pads with low defective integral window - Google Patents
Chemical mechanical polishing pads with low defective integral window Download PDFInfo
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- CN102310366A CN102310366A CN2010102315690A CN201010231569A CN102310366A CN 102310366 A CN102310366 A CN 102310366A CN 2010102315690 A CN2010102315690 A CN 2010102315690A CN 201010231569 A CN201010231569 A CN 201010231569A CN 102310366 A CN102310366 A CN 102310366A
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Abstract
A kind of chemical mechanical polishing pads; It comprises polishing layer; Said polishing layer comprises integral window and polished surface; The substrate that said polished surface is fit to be used for to being selected from magnetic substrate, optical base-substrate and semiconductor chip polishes, and the prescription of said integral window provides improved defective performance in polishing process.A kind of method of using said chemical mechanical polishing pads that substrate is polished also is provided.
Description
Technical field
The present invention relates generally to the chemically mechanical polishing field.Particularly, the present invention relates to have the chemical mechanical polishing pads of low defective integral window.The invention still further relates to a kind of use and have the chemical mechanical polishing pads of low defective integral window carries out chemically mechanical polishing to substrate method.
Background technology
In the manufacturing of integrated circuit and other electronic device, need be on the surface of semiconductor wafer conductive material, semi-conducting material and the dielectric material of deposit multilayer, perhaps these material layers are removed from the surface of semiconductor wafer.Can use the thin layer of many kinds of techniques of deposition conductive materials, semi-conducting material and dielectric materials.Conventional deposition technique comprises physical vapor deposition (PVD) (being also referred to as sputter), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD) and galvanoplastic (ECP) etc. in the modern wafer processing.
When material layer was deposited successively and removes, it is uneven that the uppermost surface of wafer becomes.Because semiconductor machining subsequently (for example metallization) needs wafer to have smooth surface, so wafer needs complanation.Complanation can be used to remove does not hope the surface topography and the blemish that occur, rough surface for example, agglomeration material, lattice damage, the layer or the material of cut and pollution.
Chemical-mechanical planarization, i.e. chemically mechanical polishing (CMP) are a kind of routine techniques that is used for the substrate of semiconductor wafer and so on is carried out complanation.In the CMP of routine, wafer is installed on the bracket component, be arranged on CMP equipment in the polishing pad position contacting.Said bracket component is that wafer provides the pressure that can control, and it is pressed to polishing pad.Make polishing pad with respect to movement of wafers (for example rotating) through extraneous driving force.Meanwhile, Chemical composition that (" slurries ") or other polishing solution are provided between wafer and polishing pad.Therefore, through the chemical action and the mechanism of pad interface and slurries, the surface of wafer polished make its complanation.
A problem that exists in the chemically mechanical polishing is to determine when substrate is polished to required degree.People have developed the method that original position is confirmed polishing end point.A kind of such method is used laser interferometer, and the light that uses laser instrument to produce is measured the size of substrate.Therefore, people have developed the chemical mechanical polishing pads with some characteristics, and these characteristics are convenient to confirm through optical method the size characteristic of substrate.For example, United States Patent (USP) the 5th, 605 has disclosed a kind of polishing pad No. 760, and wherein at least a portion of polishing pad is transmission to the laser of certain wave-length coverage.In one embodiment, said polishing pad comprises the transparent window film that is arranged in the opaque polishing pad of other part.Said window can be arranged on the spillikin or the insert of the transparent polymer material in the moulding polishing pad.Said spillikin or insert can be the inserts (being integral window) that is molded in the said polishing pad, perhaps can after molded operation, be fit in the otch in the polishing pad (being insert window in place).
The conventional chemical mechanical polishing pad that comprises insert window in place leaks polishing medium at the interface easily between the remainder of insert window in place and chemical mechanical polishing pads.The polishing medium of this leakage can infiltrate through in polishing layer, intermediate layer or the subpad layer, causes the for example constrictive area differentiation of polishing layer, causes polishing defect to increase.The polishing medium that leaks also can permeate through polishing pad, and polissoir is caused damage.
With respect to insert window in place; The conventional chemical mechanical polishing pad that comprises integral window increases polishing defect easily; This is that this window can outwards protrude from polishing pad, causes polishing defect (for example polished substrate being caused cut) because of prolongation service time along with polishing pad.
Therefore, people need a kind of improved chemical mechanical polishing pads that comprises window, and it can reduce the leakage problem that insert window in place brings usually, and the polishing defect problem that has of conventional integral window.
Summary of the invention
In one aspect of the invention, a kind of chemical mechanical polishing pads is provided, it comprises: polishing layer, and this polishing layer comprises polished surface and integral window; Said integral window is combined in the said polishing layer; Said integral window is the polyurethane reaction product of curing agent and isocyanate-terminated prepolymer polyalcohol; Said curing agent comprises the curing agent amine moiety, this curing agent amine moiety can with contained unreacted NCO partial reaction in the said isocyanate-terminated prepolymer polyalcohol, form integral window; With the stoichiometric proportion of amine moiety and unreacted NCO part is that said curing agent and isocyanate-terminated prepolymer polyalcohol were provided in 1: 1 to 1: 1.25; The porosity of said integral window＜0.1 volume %; The compressive deformation of said integral window is 5-25%; Wherein, the said polished surface substrate that is fit to be used for to being selected from magnetic substrate, optical base-substrate and semiconductor chip polishes.
In another aspect of the present invention, a kind of method that is used for the substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is carried out chemically mechanical polishing is provided, said method comprises: chemical-mechanical polisher is provided, and this equipment comprises platen; At least one substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is provided; Select chemical mechanical polishing pads, said polishing pad comprises polishing layer, and said polishing layer comprises the integral window that is formed at wherein, and the compressive deformation of said integral window is 5-25%; Said chemical mechanical polishing pads is installed on the said platen; Polished surface with said polishing layer polishes said at least one kind substrate.
In another aspect of the present invention, a kind of method that is used for the substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is carried out chemically mechanical polishing is provided, said method comprises: chemical-mechanical polisher is provided, and this equipment comprises platen; At least one substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is provided; Select the described chemical mechanical polishing pads of claim 1; Said chemical mechanical polishing pads is installed on the said platen; Polished surface with said polishing layer polishes said at least one substrate.
The specific embodiment
The term that uses in this paper and the appended claims " polishing medium " comprises polishing fluid that contains particle and the polishing solution that does not contain particle, such as no abrasive material and reactive fluid polishing fluid.
The term that in this paper and appended claims, uses " gathers (ammonia ester) " and comprising: the polyurethane that (a) forms through (i) isocyanates and the reaction of (ii) polyalcohol (comprising glycol); And (b) the gathering of the composite reaction formation through (i) isocyanates and (ii) polyalcohol (comprising glycol) and (iii) water, amine (comprising diamines and polyamines) or water and amine (comprising diamines and polyamines) (ammonia ester).
Chemical mechanical polishing pads of the present invention comprises polishing layer, and this polishing layer comprises polished surface and integral window; Said integral window is combined in the said polishing layer; Said integral window is the polyurethane reaction product of curing agent and isocyanate-terminated prepolymer polyalcohol; Said curing agent comprises the curing agent amine moiety, this curing agent amine moiety can with contained unreacted NCO partial reaction in the said isocyanate-terminated prepolymer polyalcohol, form integral window; With the stoichiometric proportion of amine moiety and unreacted NCO part is that said curing and isocyanate-terminated prepolymer polyalcohol were provided in 1: 1 to 1: 1.25; The porosity of said integral window＜10.0 volume %, preferred＜0.1 volume %, more preferably 0.000001 to＜0.1 volume %; Be more preferably 0.000001 to＜0.9 volume %, 0.000001-0.05 volume % most preferably, the compressive deformation of said integral window is 5-25%; Be preferably 5-20%; More preferably 5-15% is more preferably 5-10%, most preferably is 5-8%; Wherein, the said polished surface substrate that is fit to be used for to being selected from magnetic substrate, optical base-substrate and semiconductor chip polishes.
Preferably, said curing agent and isocyanate-terminated prepolymer polyalcohol provide with suitable ratio, make NH
2With unreacted NCO stoichiometric proportion be 1: 1 to 1: 1.25, be preferably 1: 1 to 1: 1.15, more preferably 1: 1 to 1: 1.10.Said stoichiometric relationship can directly obtain through the stoichiometry content of supplying raw materials, and perhaps through having a mind to make NCO with the water reaction or make it contact external moisture, reacts away the NCO of a part, thereby obtains indirectly.
Isocyanate-terminated prepolymer polyalcohol comprises the for example product of polyalcohol and multifunctional aromatic isocyanate.Suitable polyalcohol comprises for example PPG; Polycarbonate polyol; PEPA; Polycaprolactone polyol; Ethylene glycol; 1, the 2-propane diols; 1, ammediol; 1, the 2-butanediol; 1, the 3-butanediol; The 2-methyl isophthalic acid, ammediol; 1, the 4-butanediol; Neopentyl glycol; 1, the 5-pentanediol; The 3-methyl isophthalic acid, the 5-pentanediol; 1, the 6-hexylene glycol; Diethylene glycol (DEG); DPG; Tripropylene glycol, and their mixture.Preferred polyhydric alcohols comprises polytetramethylene ether diol [PTMEG]; Polytrimethylene ether glycol [PPG]; Ester group polyol (for example adipic acid second diester or adipic acid fourth diester); Their copolymer and mixture.The example of suitable multifunctional aromatic isocyanate comprises 2; 4-toluene di-isocyanate(TDI), 2; 6-toluene di-isocyanate(TDI), 4; 4 '-methyl diphenylene diisocyanate, naphthalene-1,5-vulcabond, tolidine vulcabond, PPDI, XDI and their mixture.Preferably, said multifunctional aromatic isocyanate comprise less than 20 weight %, preferably less than 15 weight %, most preferably less than the aliphatic isocyanate of 12 weight %, for example 4,4 '-dicyclohexyl methyl hydride diisocyanate; IPDI and cyclohexane diisocyanate.Preferably, said isocyanate-terminated prepolymer polyalcohol comprises 8.75-9.40 weight %, preferred 8.90-9.30 weight %, the more preferably unreacted NCO part of 9.00-9.25 weight %.Preferably, said isocyanate-terminated prepolymer polyalcohol comprises isocyanate-terminated polytetramethylene ether diol.More preferably, said isocyanate-terminated prepolymer polyalcohol comprises isocyanate-terminated polytetramethylene ether diol; Wherein said isocyanate-terminated prepolymer polytetramethylene ether diol comprises the unreacted NCO part of 8.90-9.30 weight %.Most preferably, said isocyanate-terminated prepolymer polyalcohol comprises isocyanate-terminated polytetramethylene ether diol; Wherein said isocyanate-terminated prepolymer polytetramethylene ether diol comprises the unreacted NCO part of 9.00-9.25 weight %.
Curing agent for example comprises 4,4 '-methylene-two o-chloraniline [MBCA], 4, and 4 '-methylene-two-(3-chloro-2,6-diethylaniline) is (MCDEA); Diformazan sulfenyl toluenediamine; Two p-aminobenzoic acid-1, the ammediol ester; PolyTHF two p-aminobenzoic acid esters; PolyTHF list p-aminobenzoic acid ester; PPOX two p-aminobenzoic acid esters; PPOX list p-aminobenzoic acid ester; 1,2-two (2-aminobenzene sulfenyl) ethane; 4,4 '-methylene-diphenylamines; Diethyl toluene diamine; The 5-tert-butyl group-2, the 4-toluenediamine and the 3-tert-butyl group-2,6-toluenediamine; 5-tertiary pentyl-2,4-toluenediamine and 3-tertiary pentyl-2,6-toluenediamine and chlorotoluene diamines, and their mixture.Preferred said curing agent is MBCA.
In the time of the preparation integral window, preferably raw material and stoichiometry to be selected, the compressive deformation of the feasible integral window material that makes is 5-25%; More preferably 5-20% is more preferably 5-15%, also 5-10% more preferably; Again more preferably 5% to less than 10%; Most preferably be 5-8%, above compressive deformation is according to ASTM D395-03 method A, records under the condition at 70 ℃ and 22 hours.Randomly, can use the integral window of independent blend step manufacturing, avoid the use of prepolymer based on urethane polymer.
Said integral window is that the light transmittance of the light of 670 nanometers is preferably selected from 20-70%, the scope of 20-50% and 30-50% to wavelength.
Chemical mechanical polishing pads of the present invention randomly also comprises the basalis with the polishing layer adjacency.Can randomly use adhesive that said polishing layer and basalis are coupled together.Said adhesive can be selected from contact adhesive, hotmelt, contact adhesive and their combination.In some embodiments, said adhesive is a hotmelt.In some embodiments, said adhesive is a contact adhesive.In some embodiments, said adhesive is a contact adhesive.
Chemical mechanical polishing pads of the present invention randomly also comprises basalis, and and said polishing layer and basalis adjacency and at least one the other layer between said polishing layer and basalis.Can randomly use adhesive that each layer linked together.Said adhesive can be selected from contact adhesive, hotmelt, contact adhesive and their combination.In some embodiments, said adhesive is a hotmelt.In some embodiments, said adhesive is a contact adhesive.In some embodiments, said adhesive is a contact adhesive.
Chemical mechanical polishing pads of the present invention preferably is fit to the platen adjacency with polishing machine.Optional be fit to use at least a in contact adhesive and the vacuum, chemical mechanical polishing pads of the present invention is fixed on the said platen.
The polished surface of the polishing layer of chemical mechanical polishing pads of the present invention is optional to have at least a in macrostructure (macrotexture) and the microstructure (microtexture), with the polishing of promotion substrate.Preferably; Said polished surface has macrostructure, and said macrostructure is used for alleviating at least a of following situation: skid, influence polishing medium rigidity, minimizing edge effect and the transfer of promotion polishing chip mobile, that change polishing layer and leave the zone between polished surface and substrate.
The optional at least a macrostructure that has in perforation of being selected from and the groove of the polished surface of the polishing layer of chemical mechanical polishing pads of the present invention.Randomly, said perforation can partly or entirely run through polishing layer thickness from polished surface.Randomly, groove is arranged on the polished surface, makes to have at least a groove to skim over substrate when polishing pad rotates in the polishing process.Randomly, said groove is selected from crooked groove, straight-line groove and combination thereof.Randomly, the degree of depth of said groove >=10 mils; Be preferably the 10-150 mil.Randomly, said groove forms groove pattern, and said groove pattern comprises at least two grooves with following characteristic combination: the degree of depth is selected from >=10 mils, >=15 mils and 15-150 mil; Width is selected from >=10 mils and 10-100 mil; Slot pitch is selected from >=30 mils, >=50 mils, 50-200 mil, 70-200 mil, and 90-200 mil.
The method that is used for the substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is carried out chemically mechanical polishing of the present invention comprises: chemical-mechanical polisher is provided, and this equipment comprises platen; At least one substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is provided; Select chemical mechanical polishing pads, said polishing pad comprises polishing layer, and said polishing layer comprises the integral window that is formed at wherein, and the compressive deformation of said integral window is 5-25%, preferred 5-20%, and more preferably 5-15% is more preferably 5-10%, also more preferably 5-8%; Said chemical mechanical polishing pads is installed on the said platen; Polished surface with said polishing layer polishes said at least one substrate.Preferably, polishing pad of the present invention carries out after 10 hours the polishing substrate under 40 ℃ polish temperature, the integral window in this chemical mechanical polishing pads from the polished surface of polishing layer outwards protrude≤50 microns, more preferably 0-50 micron, most preferably 0-40 micron.
To in following examples, describe embodiments more of the present invention in detail now.
Embodiment
Window piece material
Prepared window piece material through following steps, be used for it is attached in the chemical mechanical polishing layer window as a whole.The curing agent (being MBCA) of the various amounts shown in the table 1 and isocyanate-terminated prepolymer the polyalcohol L325 of triumphant nurse Tula company (Chemtura) (promptly available from) are mixed, add in the mould.Make the material in the mould in baking oven, solidify 18 hours then.Temperature of oven is set in 93 ℃, heats 20 minutes; Be set in 104 ℃ then, heated 15 hours 40 minutes; Be cooled to 21 ℃ then, handled again last 2 hours.Then said window piece material is cut into insert, so that it is incorporated in the polishing bedder piece through usual manner.
Table 1
| ? Embodiment | MBCA (weight %) | L325 (weight %) | Stoichiometric proportion |
| (NH 2 /NCO) | |||
| Window comparative example 1 | 18.4 | 81.6 | 0.78∶1.00 |
| Window comparative example 2 | 21.5 | 78.5 | 0.95∶1.00 |
| Window 3 | 23.2 | 76.8 | 1.00∶1.05 |
The compressive deformation test
The sample for preparing window piece material is as stated tested according to the step of ASTM Method D395-03 method A, measures compressive deformation.These result of experiment are listed in table 2.
Table 2
| Embodiment | The compressive deformation that records (inch %) |
| Window comparative example 1-1 | 1.9 |
| Window comparative example 1-2 | 2.0 |
| Window comparative example 1-3 | 2.3 |
| Window comparative example 2-1 | 4.6 |
| Window comparative example 2-2 | 4.3 |
| Window 3-1 | 6.1 |
| Window 3-2 | 5.8 |
| Window 3-3 | 7.4 |
Polishing experiments
Polishing pad
Use the identical following sample of polishing layer formulation: (a) contrast polishing pad, it comprises that the conventional integral window shown in the window comparative example 1 of above table 1 forms NH
2With the stoichiometric proportion of NCO be 0.78: 1.00, (b) polishing pad, it comprises that the integral window of the present invention shown in the embodiment 3 of above table 1 forms, wherein NH
2With the stoichiometric proportion of NCO be 1: 1.05.Said have the contrast polishing pad of custom window prescription and comprise that the polishing pad of window prescription of the present invention all is 50 mil thick, has the circular groove that the degree of depth is 15 mils.Two kinds of polishing layer formulations all are layered in the Suba IV available from ROHM AND HAAS electronic material CMP Co., Ltd (Rohm and Haas Electronic Materials CMP Inc)
TMOn the subpad material.
Polishing condition
Use Applied Materials
millimeter polishing machine and polishing pad mentioned above, under the downward active force condition of 20.7 kPas polishing, the copper cover wafers is polished; The chemical-mechanical polishing compositions that uses be available from the general objective Materials Co., Ltd of love (Epoch Material Co., EPL2361 Ltd), flow velocity are 200 ml/min; Platen rotating speed 93rpm; Support rotating speed 87rpm; Use Kinik
AD3CG 181060 trimmers; Carrying out completely in-situ conditioning with 48.3 kPas downward finishing active forces ended after 20 minutes; End after 10 minutes in finishing under 62.1 kPas the downward active force then, repair with 48.3 kPas downward active force then.Use KLA TencorSP-1 check utensil, after polishing in 0 hour, 2.5 hours, 5 hours, 7.5 hours and 10 hours, measure the cut number on the copper cover wafers in the wafer surface that does not have pattern.These cuts are counted testing result and are listed in table 3.
Table 3
The window protrusion
In addition, under said polishing condition, carry out on polished surface, having measured the integral window profile after 10 hours the continuous wafer polishing, to confirm that window is from the polished surface outside degree of protrusion arbitrarily.The average protrusion of the integral window material of comparative example window 1 is greater than 100 microns, and the average protrusion of the integral window material of embodiment window 3 is less than 40 microns.
Claims (9)
1. chemical mechanical polishing pads, it comprises:
Polishing layer, it comprises polished surface and integral window;
Said integral window becomes one in said polishing layer;
Said integral window is the polyurethane reaction product of curing agent and isocyanate-terminated prepolymer polyalcohol;
Said curing agent comprises the curing agent amine moiety, this curing agent amine moiety can with contained unreacted NCO partial reaction in the said isocyanate-terminated prepolymer polyalcohol, form said integral window;
With the stoichiometric proportion of amine moiety and unreacted NCO part is that 1: 1 to 1: 1.25 consumption provides said curing agent and said isocyanate-terminated prepolymer polyalcohol;
The porosity of said integral window＜0.1 volume %;
The compressive deformation of said integral window is 5-25%;
Wherein, the said polished surface substrate that is fit to be used for to being selected from magnetic substrate, optical base-substrate and semiconductor chip polishes.
2. chemical mechanical polishing pads as claimed in claim 1 is characterized in that said integral window has elliptic cross-section in being parallel to the plane of said polished surface.
3. chemical mechanical polishing pads as claimed in claim 1 is characterized in that, said isocyanate-terminated prepolymer polyalcohol comprises isocyanate-terminated polytetramethylene ether diol.
4. chemical mechanical polishing pads as claimed in claim 1 is characterized in that, said isocyanate-terminated prepolymer polyalcohol comprises the unreacted NCO part of 8.75-9.40 weight %.
5. chemical mechanical polishing pads as claimed in claim 3 is characterized in that, said isocyanate-terminated polytetramethylene ether diol comprises the unreacted NCO part of 9.00-9.25 weight %.
6. chemical mechanical polishing pads as claimed in claim 1 is characterized in that, said integral window is 20-50% at the light transmittance of 670 nanometers.
7. one kind is used for the substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is carried out the method for chemically mechanical polishing, and this method comprises:
Chemical-mechanical polisher is provided, and this equipment comprises platen;
At least one substrate that is selected from magnetic substrate, optical base-substrate and the semiconductor chip is provided;
Select chemical mechanical polishing pads as claimed in claim 1;
Said chemical mechanical polishing pads is installed on the said platen;
Polished surface with said polishing layer polishes said at least one substrate.
8. one kind is used for the substrate that is selected from magnetic substrate, optical base-substrate and semiconductor chip is carried out the method for chemically mechanical polishing, and this method comprises:
Chemical-mechanical polisher is provided, and this equipment comprises platen;
At least one substrate that is selected from magnetic substrate, optical base-substrate and the semiconductor chip is provided;
Selection comprises the chemical mechanical polishing pads of polishing layer, and said polishing layer comprises the integral window that is formed at wherein, and the compressive deformation of said integral window is 5-25%;
Said chemical mechanical polishing pads is installed on the said platen;
Polished surface with said polishing layer polishes said at least one substrate.
9. method as claimed in claim 7 is characterized in that, after substrate being carried out 10 hours polishing, integral window from the polished surface of polishing layer outwards protrude≤50 microns.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010231569.0A CN102310366B (en) | 2010-07-08 | 2010-07-08 | Chemical mechanical polishing pad with low-defect overall window |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010231569.0A CN102310366B (en) | 2010-07-08 | 2010-07-08 | Chemical mechanical polishing pad with low-defect overall window |
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| Publication Number | Publication Date |
|---|---|
| CN102310366A true CN102310366A (en) | 2012-01-11 |
| CN102310366B CN102310366B (en) | 2014-03-05 |
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| CN201010231569.0A Ceased CN102310366B (en) | 2010-07-08 | 2010-07-08 | Chemical mechanical polishing pad with low-defect overall window |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104551977A (en) * | 2013-10-24 | 2015-04-29 | 罗门哈斯电子材料Cmp控股股份有限公司 | Method for chemical mechanical polishing silicon wafers |
| CN105014527A (en) * | 2014-04-29 | 2015-11-04 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing pad with endpoint detection window |
| CN105033841A (en) * | 2014-04-29 | 2015-11-11 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing pad with clear endpoint detection window |
| CN105215837A (en) * | 2014-06-25 | 2016-01-06 | 罗门哈斯电子材料Cmp控股股份有限公司 | Cmp method |
| CN105313003A (en) * | 2014-06-25 | 2016-02-10 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing layer formulation with conditioning tolerance |
| CN108994722A (en) * | 2017-06-06 | 2018-12-14 | 陶氏环球技术有限责任公司 | The removal rate chemical mechanical polishing pads improved with planarization |
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| EP0824995A1 (en) * | 1996-08-16 | 1998-02-25 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US6387312B1 (en) * | 1999-08-17 | 2002-05-14 | Rodel Holdings Inc. | Molding a polishing pad having integral window |
| CN1425190A (en) * | 2000-01-25 | 2003-06-18 | 株式会社尼康 | Monitor, method of monitoring, polishing device, and method of manufacturing semiconductor wafer |
| CN1622289A (en) * | 2003-11-25 | 2005-06-01 | Cmp罗姆和哈斯电子材料控股公司 | Polishing pad with high optical transmission window |
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2010
- 2010-07-08 CN CN201010231569.0A patent/CN102310366B/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0824995A1 (en) * | 1996-08-16 | 1998-02-25 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US6387312B1 (en) * | 1999-08-17 | 2002-05-14 | Rodel Holdings Inc. | Molding a polishing pad having integral window |
| CN1425190A (en) * | 2000-01-25 | 2003-06-18 | 株式会社尼康 | Monitor, method of monitoring, polishing device, and method of manufacturing semiconductor wafer |
| CN1622289A (en) * | 2003-11-25 | 2005-06-01 | Cmp罗姆和哈斯电子材料控股公司 | Polishing pad with high optical transmission window |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104551977A (en) * | 2013-10-24 | 2015-04-29 | 罗门哈斯电子材料Cmp控股股份有限公司 | Method for chemical mechanical polishing silicon wafers |
| CN105014527A (en) * | 2014-04-29 | 2015-11-04 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing pad with endpoint detection window |
| CN105033841A (en) * | 2014-04-29 | 2015-11-11 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing pad with clear endpoint detection window |
| CN105215837A (en) * | 2014-06-25 | 2016-01-06 | 罗门哈斯电子材料Cmp控股股份有限公司 | Cmp method |
| CN105313003A (en) * | 2014-06-25 | 2016-02-10 | 罗门哈斯电子材料Cmp控股股份有限公司 | Chemical mechanical polishing layer formulation with conditioning tolerance |
| CN105215837B (en) * | 2014-06-25 | 2018-10-19 | 罗门哈斯电子材料Cmp控股股份有限公司 | Cmp method |
| CN108994722A (en) * | 2017-06-06 | 2018-12-14 | 陶氏环球技术有限责任公司 | The removal rate chemical mechanical polishing pads improved with planarization |
| CN108994722B (en) * | 2017-06-06 | 2021-08-17 | 陶氏环球技术有限责任公司 | Chemical mechanical polishing pad with improved removal rate and planarization |
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|---|---|
| CN102310366B (en) | 2014-03-05 |
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