CN108776423A - A kind of production method and equipment of touch control layer - Google Patents
A kind of production method and equipment of touch control layer Download PDFInfo
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- CN108776423A CN108776423A CN201810689115.4A CN201810689115A CN108776423A CN 108776423 A CN108776423 A CN 108776423A CN 201810689115 A CN201810689115 A CN 201810689115A CN 108776423 A CN108776423 A CN 108776423A
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- layer
- light
- photoresist layer
- film layer
- transmissive film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Position Input By Displaying (AREA)
- Materials For Photolithography (AREA)
Abstract
The embodiment of the invention discloses a kind of production method of touch control layer and equipment, including the sputter light-transmissive film layer on photoresist layer；Processing is exposed to photoresist layer by chromium plate film surface and light-transmissive film layer using exposure light source, the pattern on chromium plate film surface is made to be transferred on photoresist layer；Wherein, chromium plate film surface is in direct contact with light-transmissive film layer；Chromium plate is removed from light-transmissive film layer, and removes the light-transmissive film layer on the photoresist layer after being located at exposure, is obtained with figuratum photoresist layer.It can be seen that, the embodiment of the present invention avoids chromium plate during being exposed to photoresist layer and photoresist layer is in direct contact, to avoid optical adhesive layer from occurring the generation of pattern broken string phenomenon after exposure, the making yield of touch control layer is improved while ensuring exposure accuracy.
Description
Technical field
The present embodiments relate to electronic product manufacture technology fields, a kind of production method more particularly to touch control layer and
Equipment.
Background technology
With the development of science and technology, application of the electronic product with touch function in life is more and more extensive.Currently, glass
The making of the touch control layer of glass structure generally uses yellow light technique, and is exposed by the way of non-contact exposure.That is chromium plate
It there are certain gap between film surface and photoresist layer, is scattered since light exists, the presence in gap makes practical light when exposure
Region can be more than design section, strong influence requirement of the touch control layer to fine linewidth.Such as metal currently on the market
Mesh etc. requires in 5um even 4um lines hereinafter, if using contactless exposure, exposure machine is required it is very high, and
Equipment and its costliness, general contactless exposure machine are difficult to meet.And when making touch screen by the way of contact exposure,
Chromium plate film surface needs are in direct contact with photoresist, and this mode eliminates gap, can largely improve exposure accuracy,
But when making touch control layer using contact exposure, photoresist is easy to bond with chromium plate, to cause the pattern on photoresist disconnected
Line makes the making yield of touch control layer reduce.
In consideration of it, how to provide it is a kind of solve above-mentioned technical problem touch-control layer manufacturing method thereof and equipment become this field skill
The current problem to be solved of art personnel.
Invention content
The purpose of the embodiment of the present invention is to provide a kind of production method and equipment of touch control layer, can keep away in use
Exempt from the generation that pattern broken string phenomenon occurs after exposure in optical adhesive layer, the system of touch control layer is improved while ensuring exposure accuracy
Make yield.
In order to solve the above technical problems, an embodiment of the present invention provides a kind of production methods of touch control layer, including：
The sputter light-transmissive film layer on photoresist layer；
Processing is exposed to the photoresist layer by chromium plate film surface and the light-transmissive film layer using exposure light source, makes institute
The pattern on chromium plate film surface is stated to be transferred on the photoresist layer；Wherein, the chromium plate film surface directly connects with the light-transmissive film layer
It touches；
The chromium plate is removed from the light-transmissive film layer, and removes the light-transmissive film on the photoresist layer after being located at exposure
Layer obtains the photoresist layer with the pattern.
Optionally, the process of light-transmissive film layer of the removal on the photoresist layer after exposure is：
The light-transmissive film layer on the photoresist layer after exposure is etched using the method for chemical etching, to go
Except the light-transmissive film layer.
Optionally, the process of the sputter light-transmissive film layer on photoresist layer is：
The sputtered indium tin oxide film layer on photoresist layer.
Optionally, the method using chemical etching loses the light-transmissive film layer on the photoresist layer after exposure
Quarter is handled, and the process to remove the light-transmissive film layer is：
The tin indium oxide film layer on the photoresist layer after exposure is etched by the way of acid etch, with
Remove the tin indium oxide film layer.
Optionally, the process of the sputtered indium tin oxide film layer on photoresist layer is：
The surface that tin indium oxide is sputtered to the photoresist layer by the way of magnetic control sputtering plating forms tin indium oxide film layer.
Optionally, the surface that tin indium oxide is sputtered to the photoresist layer by the way of magnetic control sputtering plating forms oxygen
Change indium tin film layer process be：
Tin indium oxide is sputtered to by the photoresist by the tin indium oxide target material comprising niobium by the way of magnetic control sputtering plating
The surface of layer forms tin indium oxide film layer.
Optionally, further include that place is etched to the metal layer below the photoresist layer by the method for acid etching
Reason, so that the metal layer forms the metal electrode with described image.
The embodiment of the present invention additionally provides a kind of making apparatus of touch control layer, including：
Sputtering unit, for the sputter light-transmissive film layer on photoresist layer；
Exposure device, for being carried out to the photoresist layer by chromium plate film surface and the light-transmissive film layer using exposure light source
Exposure-processed makes the pattern on the chromium plate film surface be transferred on the photoresist layer；Wherein, the chromium plate film surface with it is described
Light film layer is in direct contact；
Cleaning device for removing the chromium plate from the light-transmissive film layer, and removes the photoresist after being located at exposure
Light-transmissive film layer on layer obtains the photoresist layer with the pattern.
An embodiment of the present invention provides a kind of production method of touch control layer and equipment, including the sputter light transmission on photoresist layer
Film layer；Processing is exposed to photoresist layer by chromium plate film surface and light-transmissive film layer using exposure light source, is made on chromium plate film surface
Pattern is transferred on photoresist layer；Wherein, chromium plate film surface is in direct contact with light-transmissive film layer；Chromium plate is removed from light-transmissive film layer,
And the light-transmissive film layer on the photoresist layer after being located at exposure is removed, it obtains with figuratum photoresist layer.
As it can be seen that the embodiment of the present invention, during making touch control layer, chromium plate is with sputter in the light-transmissive film on photoresist layer
Layer is in direct contact, and is exposed processing to photoresist layer by the light-transmissive film layer, and the pattern on chromium plate is made to pass through exposure
Mode is transferred on photoresist layer, is removed chromium plate from light-transmissive film layer after end exposure, and get rid of light-transmissive film layer
Obtain the photoresist layer with complete pattern.The application avoids being in direct contact for chromium plate and photoresist layer in exposure process,
To avoid optical adhesive layer from occurring the generation of pattern broken string phenomenon after exposure, touch-control is improved while ensuring exposure accuracy
The making yield of layer.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to institute in the prior art and embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the present invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of flow diagram of the production method of touch control layer provided in an embodiment of the present invention；
Fig. 2 is the flow diagram of the production method of another touch control layer provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram of the making apparatus of touch control layer provided in an embodiment of the present invention.
Specific implementation mode
An embodiment of the present invention provides a kind of production method of touch control layer and equipment, can avoid optics in use
There is the generation of pattern broken string phenomenon after exposure in glue-line, and the making that touch control layer is improved while ensuring exposure accuracy is good
Rate.
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
The every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
Fig. 1 is please referred to, Fig. 1 is a kind of flow diagram of the production method of touch control layer provided in an embodiment of the present invention.
This method includes：
S11：The sputter light-transmissive film layer on photoresist layer；
S12：Processing is exposed to photoresist layer by chromium plate film surface and light-transmissive film layer using exposure light source, makes chromium plate film
Pattern on face is transferred on photoresist layer；Wherein, chromium plate film surface is in direct contact with light-transmissive film layer；
S13：Chromium plate is removed from light-transmissive film layer, and removes the light-transmissive film layer on the photoresist layer after being located at exposure, is obtained
To with figuratum photoresist layer.
It should be noted that in touch control layer from bottom to up successively include glass substrate, the first metal electrode layer, insulating layer and
Second metal electrode layer needs to make the metal electrode layer for being located at the top by photoresist layer when making touch control layer, so
The exposure of photoresist layer is to make the important link of touch control layer.
It is directly connect with photoresist layer specifically, not needing chromium plate film surface when being exposed to photoresist layer in the embodiment of the present invention
It touches, but one layer of light-transmissive film layer of sputter on photoresist layer, so that chromium plate film surface is in direct contact with light-transmissive film layer, using exposure light source
Processing is exposed to photoresist layer by chromium plate and light-transmissive film layer, (is specifically as follows nano level since light-transmissive film layer is very thin
Light-transmissive film layer), it is possible to compared to contactless exposure, exposure accuracy will greatly improve.Again because of chromium plate and photoresist layer
Between be equipped with light-transmissive film layer, so chromium plate will not stick together with photoresist layer when after completion of the exposure removing chromium plate, photoetching
The phenomenon that broken string would not occur in the pattern exposed on glue-line, it is only necessary to remove the light-transmissive film layer above photoresist layer
It removes and can be obtained photoresist layer after exposing, with predetermined pattern, namely the pattern on the photoresist layer after exposure is complete,
It does not damage, and then subsequent touch control layer manufacturing process can be carried out according to the pattern on the photoresist layer, wherein default figure
Case is the pattern on chromium plate.As it can be seen that the embodiment of the present invention, during making touch control layer, chromium plate is with sputter in photoresist layer
On light-transmissive film layer be in direct contact, and processing is exposed to photoresist layer by light-transmissive film layer, the pattern on chromium plate is made to pass through
The mode of exposure is transferred on photoresist layer, is removed chromium plate from light-transmissive film layer after end exposure, and get rid of light-transmissive film
Layer can be obtained the photoresist layer with complete pattern.The application avoids the direct of chromium plate and photoresist layer in exposure process
Contact improves to avoid optical adhesive layer from occurring the generation of pattern broken string phenomenon after exposure while ensuring exposure accuracy
The making yield of touch control layer.
Fig. 2 is please referred to, the embodiment of the invention discloses a kind of production methods of touch control layer, relative to a upper embodiment, originally
Embodiment has made further instruction and optimization to technical solution.Specifically：
S11：The sputter light-transmissive film layer on photoresist layer；
S12：Processing is exposed to photoresist layer by chromium plate film surface and light-transmissive film layer using exposure light source, makes chromium plate film
Pattern on face is transferred on photoresist layer；Wherein, chromium plate film surface is in direct contact with light-transmissive film layer；
S13：Chromium plate is removed from light-transmissive film layer, and removes the light-transmissive film layer on the photoresist layer after being located at exposure, is obtained
To with figuratum photoresist layer；
Further, the removal in above-mentioned S13 is located at the process of the light-transmissive film layer on the photoresist layer after exposure, specifically may be used
Think：
The light-transmissive film layer on the photoresist layer after exposure is etched using the method for chemical etching, to go
Except light-transmissive film layer.
Specifically, after the completion of being exposed to photoresist layer, the method that chemical etching may be used will be located on photoresist layer
Light-transmissive film layer etching removal.It is of course also possible to use other modes remove the light-transmissive film layer, which kind of side specifically used
Formula, the application do not do this particular determination, can realize the purpose of the application.
Further, the process of sputter light-transmissive film layer on photoresist layer in above-mentioned S11, is specifically as follows：
The sputtered indium tin oxide film layer on photoresist layer.
It should be noted that due to there is the film layer that tin indium oxide (ITO) is formed that there is higher compactness, and with certain
Case hardness, so the use ito film layer that light-transmissive film layer in the application is preferential.Certainly, other than using ito film layer,
The film layer that other transparent metals or high molecular material can also be used to be made, does not do particular determination specifically.
Further, the above-mentioned method using chemical etching carries out the light-transmissive film layer on the photoresist layer after exposure
Etching process is specifically as follows with removing the process of light-transmissive film layer：
The tin indium oxide film layer on the photoresist layer after exposure is etched by the way of acid etch, with
Remove tin indium oxide film layer.
It should be noted that when the light-transmissive film layer in the application is ito film layer, the preferred method pair for using acid etching
Ito film layer is etched, to remove the ito film layer above the photoresist layer after being located at exposure.
Further, on photoresist layer sputtered indium tin oxide film layer process, be specifically as follows：
The surface that tin indium oxide is sputtered to photoresist layer by the way of magnetic control sputtering plating forms tin indium oxide film layer.
It should be noted that in order to which preferably ITO is plated on photoresist layer, the application preferably uses magnetic control sputtering plating
Mode carries out sputter processing to ITO.Certainly, in practical applications it is also an option that other modes, the application do not do this spy
It is different to limit, it can realize the purpose of the application.Further, tin indium oxide is sputtered to light by the way of magnetic control sputtering plating
The process that the surface of photoresist layer forms tin indium oxide film layer is：
Tin indium oxide is sputtered to by photoresist layer by the tin indium oxide target material comprising niobium by the way of magnetic control sputtering plating
Surface forms tin indium oxide film layer.
Ito film layer is formed specifically, ITO can be sputtered on photoresist layer by way of magnetic control sputtering plating, and
The tin indium oxide target material that doping Nb (niobium) may be used in sputtering process, in sputtering process, niobium niobium meeting under the atmosphere of oxygen
Generate niobium oxide, and niobium oxide into it is ultraviolet to infrared light be all transparent, and exposure light source is generally ultraviolet light, so niobium
It can't influence to expose.Since the film layer that the effect of niobium makes to be plating to photoresist layer surface is the mixture of ITO and niobium oxide, and because
1.48-1.50 are generally in the refractive index of 2.2-2.5, ITO for the refractive index of niobium oxide, photoresist refractive index is 1.64-
1.69, so the refractive index of the ito film layer plated out can be adjusted to 1.64-1.69 model by the mixing of niobium oxide and ITO
In enclosing, even if also its refractive index is consistent with the refractive index of photoresist layer, so that it is guaranteed that exposure accuracy.
Specifically, can be by oxygen flux control in 50sccm in sputtering process, argon gas is controlled in 150sccm, power
It is set as 4KW, so that the refractive index for the ito film layer that will be plated out is adjusted in the range of 1.64-1.69.
Further, this method further includes：
S14：The metal layer below photoresist layer is etched by the method for acid etching, so as to metal layer
Form the metal electrode with image.
It should be noted that in the application after obtaining that there is the photoresist layer of predetermined pattern, acid etching can also be used
Method be etched to being set to the metal layer below photoresist layer, to can be obtained the metal with predetermined pattern
Electrode layer, and subsequent touch control layer making is carried out according to the metal electrode layer, follow-up production method is ripe in the prior art
Method, the application is herein no longer.
Fig. 3 is please referred to, on the basis of the above embodiments, the embodiment of the present invention additionally provides a kind of making of touch control layer and sets
It is standby, including：
Sputtering unit 1, for the sputter light-transmissive film layer on photoresist layer；
Exposure device 2, for being exposed place to photoresist layer by chromium plate film surface and light-transmissive film layer using exposure light source
Reason, makes the pattern on chromium plate film surface be transferred on photoresist layer；Wherein, chromium plate film surface is in direct contact with light-transmissive film layer；
Cleaning device 3 for removing chromium plate from light-transmissive film layer, and removes saturating on the photoresist layer after being located at exposure
Light film layer is obtained with figuratum photoresist layer.
It should be noted that the making apparatus of the touch control layer in the embodiment of the present invention has with same as the previously described embodiments
Beneficial effect.In addition, being please referred to for the specific introduction of the production method of touch control layer involved in the embodiment of the present invention above-mentioned
Embodiment of the method, details are not described herein by the application.
It should also be noted that, in the present specification, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only that
A little elements, but also include other elements that are not explicitly listed, or further include for this process, method, article or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in the process, method, article or apparatus that includes the element.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (8)
1. a kind of production method of touch control layer, which is characterized in that including：
The sputter light-transmissive film layer on photoresist layer；
Processing is exposed to the photoresist layer by chromium plate film surface and the light-transmissive film layer using exposure light source, makes the chromium
Pattern on plate film surface is transferred on the photoresist layer；Wherein, the chromium plate film surface is in direct contact with the light-transmissive film layer；
The chromium plate is removed from the light-transmissive film layer, and removes the light-transmissive film layer on the photoresist layer after being located at exposure, is obtained
To the photoresist layer with the pattern.
2. the production method of touch control layer according to claim 1, which is characterized in that the removal is located at the photoetching after exposure
The process of light-transmissive film layer on glue-line is：
The light-transmissive film layer on the photoresist layer after exposure is etched using the method for chemical etching, to remove
State light-transmissive film layer.
3. the production method of touch control layer according to claim 2, which is characterized in that the sputter light transmission on photoresist layer
The process of film layer is：
The sputtered indium tin oxide film layer on photoresist layer.
4. the production method of touch control layer according to claim 1, which is characterized in that the method pair using chemical etching
Light-transmissive film layer on the photoresist layer after exposure is etched, and the process to remove the light-transmissive film layer is：
The tin indium oxide film layer on the photoresist layer after exposure is etched by the way of acid etch, with removal
The tin indium oxide film layer.
5. the production method of touch control layer according to claim 3, which is characterized in that the oxidation of the sputter on photoresist layer
The process of indium tin film layer is：
The surface that tin indium oxide is sputtered to the photoresist layer by the way of magnetic control sputtering plating forms tin indium oxide film layer.
6. the production method of touch control layer according to claim 5, which is characterized in that described to be incited somebody to action by the way of magnetic control sputtering plating
Tin indium oxide be sputtered to the photoresist layer surface formed tin indium oxide film layer process be：
Tin indium oxide is sputtered to by the photoresist layer by the tin indium oxide target material comprising niobium by the way of magnetic control sputtering plating
Surface forms tin indium oxide film layer.
7. the production method of the touch control layer according to claim 1-6 any one, which is characterized in that further include passing through acid etching
The method at quarter is etched the metal layer below the photoresist layer, so that the metal layer is formed with described
The metal electrode of image.
8. a kind of making apparatus of touch control layer, which is characterized in that including：
Sputtering unit, for the sputter light-transmissive film layer on photoresist layer；
Exposure device, for being exposed to the photoresist layer by chromium plate film surface and the light-transmissive film layer using exposure light source
Processing, makes the pattern on the chromium plate film surface be transferred on the photoresist layer；Wherein, the chromium plate film surface and the light-transmissive film
Layer is in direct contact；
Cleaning device for removing the chromium plate from the light-transmissive film layer, and removes on the photoresist layer after being located at exposure
Light-transmissive film layer, obtain the photoresist layer with the pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810689115.4A CN108776423B (en) | 2018-06-28 | 2018-06-28 | Manufacturing method and device of touch layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810689115.4A CN108776423B (en) | 2018-06-28 | 2018-06-28 | Manufacturing method and device of touch layer |
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| CN108776423A true CN108776423A (en) | 2018-11-09 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6958207B1 (en) * | 2002-12-07 | 2005-10-25 | Niyaz Khusnatdinov | Method for producing large area antireflective microtextured surfaces |
| CN104246613A (en) * | 2012-02-27 | 2014-12-24 | 传导喷墨技术有限公司 | Method of processing a photosensitive structure |
| CN106959585A (en) * | 2015-12-21 | 2017-07-18 | 富士胶片株式会社 | The manufacture method of positive light sensitivity transfer materials and wiring |
| CN107210097A (en) * | 2014-12-26 | 2017-09-26 | 日本科技先进有限公司 | There is the manufacture method and the manufacture method of wire netting substrate of the multilayer board of the electroconductive polymer layer of patterning on the transparent substrate |
-
2018
- 2018-06-28 CN CN201810689115.4A patent/CN108776423B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6958207B1 (en) * | 2002-12-07 | 2005-10-25 | Niyaz Khusnatdinov | Method for producing large area antireflective microtextured surfaces |
| CN104246613A (en) * | 2012-02-27 | 2014-12-24 | 传导喷墨技术有限公司 | Method of processing a photosensitive structure |
| CN107210097A (en) * | 2014-12-26 | 2017-09-26 | 日本科技先进有限公司 | There is the manufacture method and the manufacture method of wire netting substrate of the multilayer board of the electroconductive polymer layer of patterning on the transparent substrate |
| CN106959585A (en) * | 2015-12-21 | 2017-07-18 | 富士胶片株式会社 | The manufacture method of positive light sensitivity transfer materials and wiring |
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| CN108776423B (en) | 2020-10-30 |
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