CN108768335A - Air-tightness surface acoustic wave device encapsulating structure and production method - Google Patents
Air-tightness surface acoustic wave device encapsulating structure and production method Download PDFInfo
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- CN108768335A CN108768335A CN201810516232.0A CN201810516232A CN108768335A CN 108768335 A CN108768335 A CN 108768335A CN 201810516232 A CN201810516232 A CN 201810516232A CN 108768335 A CN108768335 A CN 108768335A
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- glass substrate
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H2009/0019—Surface acoustic wave multichip
Abstract
The invention discloses a kind of air-tightness surface acoustic wave device encapsulating structure and production methods, the encapsulating structure includes upper glass cover-plate array, lower glass substrate array and more surface acoustic wave chips, in the more surface acoustic wave chip attachment to lower glass substrate array, the upper glass cover-plate array is directed at pressing by adhesive with lower glass substrate array, form a plurality of cavities, glass cover-plate on the polylith of upper glass cover-plate array, the polylith lower glass substrate of lower glass substrate array, more surface acoustic wave chips and a plurality of cavities are to correspond, the surface acoustic wave chip is located in corresponding cavity.This invention simplifies the encapsulation of traditional surface acoustic wave device, considerably increase the handling capacity of technique, to substantially increase production efficiency.
Description
Technical field
The present invention relates to a kind of surface acoustic wave device encapsulating structure, especially a kind of air-tightness surface acoustic wave device encapsulation knot
Structure and production method belong to surface acoustic wave device encapsulation field.
Background technology
Surface acoustic wave (SAW, Surface Acoustic Wave) is a kind of elastic wave propagated along body surface.Sound table
Surface wave is one that English physicist Rayleigh (Rayleigh) is found once in a while during the Study of Seismic wave eighties in 19th century
Kind energy concentrates on the sound wave of ground surface propagation.
Nineteen sixty-five, the White (R.M.White) in the U.S. and Voltmer (F.W.Voltmer) are delivered entitled " a kind of novel
The paper of surface acoustic wave sound --- electrotransformation device " can encourage the metal of surface acoustic wave is interdigital to change in piezoelectric material surface making
Mutually converting for energy device (Inter-digital Transducer, IDT), realization sound wave and electromagnetic wave, is shown in attached drawing one.
On this basis, surface acoustic wave device obtains fast development, obtains in terms of communication, electric power and detecting and largely answers
With.
Traditional surface acoustic wave component is as shown in Figure 1, be in piezoelectric substrate (quartz, lithium niobate and lithium tantalate etc.) material
Surface is by photoetching process (similar with the manufacture craft of silicon wafer surface metallic circuit), due to the demand of frequency applications, niobic acid
Lithium (LN) and lithium tantalate (LT) are being applied relatively extensively on the market.
Existing general surface acoustic wave device encapsulating structure is as shown in Fig. 2, production process is as follows：
1) input and output weld pad and interdigital transducer are made on wafer-shaped piezoelectric material；
2) piezoelectric material wafer is cut into single surface acoustic wave element chip (surface acoustic wave device and integrated circuit at this time
Bare chip is very similar)；Due to forcing down the hard crisp frangible characteristic of massage material, cause the cutting of piezoelectricity wafer extremely difficult；
3) the attachment sound table wave bare chip on ceramic substrate (be typically high-temperature co-fired ceramics), can use routing technique or
Flip technique；
4) metal cover sealing welding ceramic substrate is used
In this encapsulating structure, the ceramic substrate price used is high；Poor dimensional stability (it is Celsius to use more than 1000
The high temperature sintering of degree)；In addition it is that cutting is difficult, there are also presplitting blade technolgies certainly so that ceramic substrate is in packaging technology
Easily it is broken.
The metal cover used in this structure carrys out sealing welding, since the expansion coefficient difference of metal and ceramics is larger,
In this way in the high temperature link of packaging technology, large area cannot be used disposably to mount the mode of welding, can only used single
The mode of screening cover (mm in size) carries out welding installation, limits the handling capacity of entire technique.
Invention content
The purpose of the present invention is to solve the defects of the above-mentioned prior art, provide a kind of air-tightness surface acoustic wave device
Encapsulating structure, the encapsulating structure simplify the encapsulation of traditional surface acoustic wave device, considerably increase the handling capacity of technique, to big
Improve production efficiency greatly.
Another object of the present invention is to provide a kind of production methods based on above-mentioned encapsulating structure.
The purpose of the present invention can be reached by adopting the following technical scheme that：
A kind of air-tightness surface acoustic wave device encapsulating structure, including upper glass cover-plate array, lower glass substrate array and more
Surface acoustic wave chip, in the more surface acoustic wave chip attachment to lower glass substrate array, the upper glass cover-plate array
It is directed at pressing with lower glass substrate array by adhesive, forms a plurality of cavities, glass cover on the polylith of upper glass cover-plate array
Plate, the polylith lower glass substrate of lower glass substrate array, more surface acoustic wave chips and a plurality of cavities are to correspond, described
Surface acoustic wave chip is located in corresponding cavity.
As the first embodiment, every piece of upper glass cover-plate of the upper glass cover-plate array includes the first glass sheet
Body, first glass body etch the first groove, the corresponding surface acoustic wave chip of the first groove face, after etching
First glass body inner surface deposition has the first conductive layer, and the first metal layer is electroplate on first conductive layer；
Every piece of lower glass substrate of the lower glass substrate array includes the second glass body, the second glass body erosion
The second groove and through hole are carved, second groove is for mounting corresponding surface acoustic wave chip, the second glass after etching
Deposition has the second conductive layer in body surface and through hole, is electroplate with second metal layer on second conductive layer, and described second
Connection circuit is etched on metal layer.
As second of embodiment, every piece of upper glass cover-plate of the upper glass cover-plate array includes the first glass sheet
The inner surface deposition of body, first glass body has the first conductive layer, and the first metal layer is electroplate on first conductive layer；
Every piece of lower glass substrate of the lower glass substrate array includes the second glass body, the second glass body erosion
Groove and through hole are carved, the groove is for mounting corresponding surface acoustic wave chip, the second glass body surface after etching
There is the second conductive layer with deposition in through hole, second metal layer is electroplate on second conductive layer, in the second metal layer
Etch connection circuit.
As the third embodiment, every piece of upper glass cover-plate of the upper glass cover-plate array includes the first glass sheet
Body, first glass body etch groove, the corresponding surface acoustic wave chip of the groove face, the first glass after etching
Body internal surface deposition has the first conductive layer, and the first metal layer is electroplate on first conductive layer；
Every piece of lower glass substrate of the lower glass substrate array includes the second glass body, the second glass body erosion
Through hole is carved, deposition has the second conductive layer, second conductive layer in the second glass body surface and through hole after etching
On be electroplate with second metal layer, connection circuit is etched in the second metal layer.
Further, every surface acoustic wave chip includes ontology, interdigital transducer, weld pad and convex block, the interdigital transducing
Device and weld pad are arranged in the lower surface of the second ontology, the weld tabs on weld pad, and convex block by rewinding method with it is corresponding
Lower substrate be fixedly connected.
Further, air discharge duct is equipped between each piece of lower glass substrate of the lower glass substrate array.
Further, described adhesive is the colloid of tin cream or nano-metal particle.
Another object of the present invention can be reached by adopting the following technical scheme that：
A kind of production method of the encapsulating structure of the first above-mentioned embodiment, the method includes；
Upper glass cover-plate array is processed；
Lower glass substrate array is processed：
It will be in more surface acoustic wave chip attachment to lower glass substrate array of well cutting；
Under vacuum, upper glass cover-plate array and lower glass substrate array are subjected to alignment pressing；
Entire pressing structure is put into high-temperature cabinet internal heating curing；
Wherein, described pair of upper glass cover-plate array is processed, and is specifically included：
Every piece of two-sided carry out photoresist coating of upper glass cover-plate to upper glass cover-plate array；
Every piece of upper glass cover-plate of upper glass cover-plate array is exposed, is developed, region to be etched is exposed；
Every piece of upper glass cover-plate that upper glass cover-plate array is etched using lye, indent is formed at every piece on upper glass cover-plate
The first groove；
Demoulding is carried out to every piece of upper glass cover-plate of upper glass cover-plate array, removes remaining photoresist；
In every piece of upper glass cover-plate inner surface depositing first conductive layer of upper glass cover-plate array；
The first metal layer is electroplated on the first conductive layer of every piece of upper glass cover-plate of upper glass cover-plate array；
The surface of every piece of upper glass cover-plate of upper glass cover-plate array is handled into row metal；
The printing binder on every piece of upper glass cover-plate of upper glass cover-plate array；
Wherein, described that lower glass substrate array is processed, it specifically includes：
For the first time to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the first time, exposes region to be etched；
The second groove of indent is etched in every piece of lower glass substrate of lower glass substrate array using lye；Wherein,
Second groove is for mounting corresponding surface acoustic wave chip；
Demoulding is carried out to every piece of lower glass substrate of lower glass substrate array for the first time, removes remaining photoresist；
Second to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the second time, exposes region to be etched；
Using lye through hole is etched in every piece of lower glass substrate of lower glass substrate array；
Second of every piece of lower glass substrate to lower glass substrate array carries out demoulding, removes remaining photoresist；
The deposit second conductive layer in the surface of every piece of lower glass substrate of lower glass substrate array and through hole；
Second metal layer is electroplated on the second conductive layer of every piece of lower glass substrate of lower glass substrate array, until running through
It is filled up in hole；
Third time is to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Third time is exposed every piece of lower glass substrate of lower glass substrate array, develops, and exposes region to be etched；
Using lye connection circuit is etched in the second metal layer of every piece of lower glass substrate of lower glass substrate array；
Third time carries out demoulding to every piece of lower glass substrate of lower glass substrate array, removes remaining photoresist；
The surface of every piece of lower glass substrate of lower glass substrate array is handled into row metal.
Another object of the present invention can also be reached by adopting the following technical scheme that：
A kind of production method of the encapsulating structure of above-mentioned second of embodiment, the method includes；
Upper glass cover-plate array is processed；
Lower glass substrate array is processed：
It will be in more surface acoustic wave chip attachment to lower glass substrate array of well cutting；
Under vacuum, upper glass cover-plate array and lower glass substrate array are subjected to alignment pressing；
Entire pressing structure is put into high-temperature cabinet internal heating curing；
Wherein, described pair of upper glass cover-plate array is processed, and is specifically included：
In every piece of upper glass cover-plate inner surface depositing first conductive layer of upper glass cover-plate array；
The first metal layer is electroplated on the first conductive layer of every piece of upper glass cover-plate of upper glass cover-plate array；
The surface of every piece of upper glass cover-plate of upper glass cover-plate array is handled into row metal；
The printing binder on every piece of upper glass cover-plate of upper glass cover-plate array；
Wherein, described that lower glass substrate array is processed, it specifically includes：
For the first time to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the first time, exposes region to be etched；
The groove of indent is etched in every piece of lower glass substrate of lower glass substrate array using lye；Wherein, described
Groove is for mounting corresponding surface acoustic wave chip；
Demoulding is carried out to every piece of lower glass substrate of lower glass substrate array for the first time, removes remaining photoresist；
Second to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the second time, exposes region to be etched；
Using lye through hole is etched in every piece of lower glass substrate of lower glass substrate array；
Second of every piece of lower glass substrate to lower glass substrate array carries out demoulding, removes remaining photoresist；
The deposit second conductive layer in the surface of every piece of lower glass substrate of lower glass substrate array and through hole；
Second metal layer is electroplated on the second conductive layer of every piece of lower glass substrate of lower glass substrate array, until running through
It is filled up in hole；
Third time is to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Third time is exposed every piece of lower glass substrate of lower glass substrate array, develops, and exposes region to be etched；
Using lye connection circuit is etched in the second metal layer of every piece of lower glass substrate of lower glass substrate array；
Third time carries out demoulding to every piece of lower glass substrate of lower glass substrate array, removes remaining photoresist；
The surface of every piece of lower glass substrate of lower glass substrate array is handled into row metal.
Another object of the present invention can also be reached by adopting the following technical scheme that：
A kind of production method of the encapsulating structure of the third above-mentioned embodiment, the method includes；
Upper glass cover-plate array is processed；
Lower glass substrate array is processed：
It will be in more surface acoustic wave chip attachment to lower glass substrate array of well cutting；
Under vacuum, by upper glass cover-plate array and the radical type alignment pressing of lower glass substrate array；
Entire pressing structure is put into high-temperature cabinet internal heating curing；
Wherein, described pair of upper glass cover-plate array is processed, and is specifically included：
Every piece of two-sided carry out photoresist coating of upper glass cover-plate to upper glass cover-plate array；
Every piece of upper glass cover-plate of upper glass cover-plate array is exposed, is developed, region to be etched is exposed；
Every piece of upper glass cover-plate that upper glass cover-plate array is etched using lye, indent is formed at every piece on upper glass cover-plate
Groove；
Remove the photoresist of every piece of upper glass cover-plate remnants of upper glass cover-plate array；
In every piece of upper glass cover-plate inner surface depositing first conductive layer of upper glass cover-plate array；
The first metal layer is electroplated on the first conductive layer of every piece of upper glass cover-plate of upper glass cover-plate array；
The surface of every piece of upper glass cover-plate of upper glass cover-plate array is handled into row metal；
The printing binder on every piece of upper glass cover-plate of upper glass cover-plate array；
Wherein, described that lower glass substrate array is processed, it specifically includes：
For the first time to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the first time, exposes region to be etched；
Using lye through hole is etched in every piece of lower glass substrate of lower glass substrate array；
Demoulding is carried out to every piece of lower glass substrate of lower glass substrate array for the first time, removes remaining photoresist；
The deposit second conductive layer in the surface of every piece of lower glass substrate of lower glass substrate array and through hole；
Second metal layer is electroplated on the second conductive layer of every piece of lower glass substrate of lower glass substrate array, until running through
It is filled up in hole；
Second to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the second time, exposes region to be etched；
Using lye connection circuit is etched in the second metal layer of every piece of lower glass substrate of lower glass substrate array；
Second of every piece of lower glass substrate to lower glass substrate array carries out demoulding, removes remaining photoresist；
The surface of every piece of lower glass substrate of lower glass substrate array is handled into row metal.
The present invention has following advantageous effect compared with the existing technology：
1, this invention simplifies the encapsulation flows of traditional SAW device, using upper glass cover-plate array and lower glass base
The mode that plate array directly presses substantially increases production efficiency, while the structure after pressing forms a plurality of cavities, each cavity
A surface acoustic wave chip can be accommodated, surface acoustic wave chip is made to seal, the height of surface acoustic wave chip is controlled by layer glass
System, the height of surface acoustic wave chip after contributing to reduction to encapsulate, especially in surface acoustic wave chip because of design or difficulty of processing
Be difficult in the case of being thinned, can effectively reduce the thickness of surface acoustic wave chip, surface acoustic wave chip most it is thin can to 0.4 millimeter with
Under；In addition, replacing expensive metallic shield lid and high-temperature co-fired ceramics using upper glass cover-plate and lower glass substrate, reduction is helped
Material cost.
2, in the cavity of the invention that surface acoustic wave chip is completely contained in glass etching and is formed, the work of protection had both been played
With, while under certain condition, the thickness of entire encapsulating structure is insensitive for the thickness of surface acoustic wave chip, reduction sound surface
Wave chip designs and the difficulty of processing.
3, the present invention can make glass cover-plate array consistent with the shape of lower glass substrate, remove because material is different
It is thermally expanded caused by and and mismatches risk, and the mode that array pressing may be used carries out, help to promote packaging technology
Handling capacity.
4, the upper glass cover-plate inner surface of each of upper glass cover-plate array of the invention adds a metal layer, passes through metal layer
The electro-magnetic screen function to surface acoustic wave chip may be implemented, while metal layer can also play the role of reinforcing air-tightness.
5, it is equipped with air discharge duct between each lower glass substrate of lower glass substrate array of the invention, passes through lower glass substrate
The shape of upper metal layer selects, and has reserved exhaust gas discharge when welding or connection, it is ensured that welding or bonding strength.
Description of the drawings
Fig. 1 is traditional surface acoustic wave device structural schematic diagram.
Fig. 2 is existing general surface acoustic wave device encapsulating structure schematic diagram.
Fig. 3 is the air-tightness surface acoustic wave device encapsulating structure schematic diagram of the embodiment of the present invention 1.
Fig. 4 be the corresponding upper glass cover-plate of every surface acoustic wave chip of the embodiment of the present invention 1, lower glass substrate it
Between relation schematic diagram.
Fig. 5 is every piece of structural schematic diagram for going up glass cover-plate in the upper glass cover-plate array of the embodiment of the present invention 1.
Fig. 6 be the embodiment of the present invention 1 lower glass substrate array in every piece of lower glass substrate structural schematic diagram.
Fig. 7 is the structural schematic diagram of every surface acoustic wave chip of the embodiment of the present invention 1.
Fig. 8 a are the schematic diagram before every piece in the upper glass cover-plate array of the embodiment of the present invention 1 upper glass cover-plate processing.
Fig. 8 b coat the signal after photoresist for every piece in the upper glass cover-plate array of the embodiment of the present invention 1 upper glass cover-plate
Figure.
Fig. 8 c are the signal after every piece in the upper glass cover-plate array of the embodiment of the present invention 1 upper glass cover-plate exposure, development
Figure.
Fig. 8 d are the schematic diagram after every piece in the upper glass cover-plate array of the embodiment of the present invention 1 upper glass cover-plate etching.
Fig. 8 e deposit the signal after conductive layer for every piece in the upper glass cover-plate array of the embodiment of the present invention 1 upper glass cover-plate
Figure.
Fig. 9 a are the schematic diagram before every piece of lower glass substrate processing in the lower glass substrate array of the embodiment of the present invention 1.
After Fig. 9 b is every piece of lower glass substrates in the lower glass substrate array of the embodiment of the present invention 1 for the first time coating photoresist
Schematic diagram.
After Fig. 9 c is the exposure for the first time of every piece of lower glass substrate, developments in the lower glass substrate array of the embodiment of the present invention 1
Schematic diagram afterwards.
Fig. 9 d are the signal after every piece of lower glass substrate etching for the first time in the lower glass substrate array of the embodiment of the present invention 1
Figure.
After Fig. 9 e is second of coating photoresists of every piece of lower glass substrate in the lower glass substrate array of the embodiment of the present invention 1
Schematic diagram.
After Fig. 9 f is second of the exposure of every piece of lower glass substrate, developments in the lower glass substrate array of the embodiment of the present invention 1
Schematic diagram afterwards.
Fig. 9 g are the signal after second of etching of every piece of lower glass substrate in the lower glass substrate array of the embodiment of the present invention 1
Figure.
Fig. 9 h deposit the signal after conductive layer for every piece of lower glass substrate in the lower glass substrate array of the embodiment of the present invention 1
Figure.
Fig. 9 i are the schematic diagram after every piece of lower glass substrate electro-coppering in the lower glass substrate array of the embodiment of the present invention 1.
Signals of Fig. 9 j for every block of lower glass substrate face copper in the lower glass substrate array of the embodiment of the present invention 1 after thinned
Figure.
After Fig. 9 k is every piece of lower glass substrate third time coating photoresists in the lower glass substrate array of the embodiment of the present invention 1
Schematic diagram.
After Fig. 9 l is every piece of exposure of lower glass substrate third time, developments in the lower glass substrate array of the embodiment of the present invention 1
Schematic diagram.
Fig. 9 m are the signal after every piece of lower glass substrate third time etching in the lower glass substrate array of the embodiment of the present invention 1
Figure.
Figure 10 is the corresponding upper glass cover-plate of every surface acoustic wave chip of the embodiment of the present invention 2, lower glass substrate
Between relation schematic diagram.
Figure 11 is every piece of structural schematic diagram for going up glass cover-plate in the upper glass cover-plate array of the embodiment of the present invention 2.
Figure 12 be the embodiment of the present invention 2 lower glass substrate array in every piece of lower glass substrate structural schematic diagram.
Figure 13 is the corresponding upper glass cover-plate of every surface acoustic wave chip of the embodiment of the present invention 3, lower glass substrate
Between relation schematic diagram.
Figure 14 is every piece of structural schematic diagram for going up glass cover-plate in the upper glass cover-plate array of the embodiment of the present invention 3.
Figure 15 be the embodiment of the present invention 3 lower glass substrate array in every piece of lower glass substrate structural schematic diagram.
In Fig. 3~Fig. 7, the upper glass cover-plate arrays of 1-, the upper glass cover-plates of 11-, the first glass bodies of 111-, 112- first is recessed
Slot, 113- the first metal layers, 114- adhesives, 2- lower glass substrate arrays, 21- lower glass substrates, the second glass bodies of 211-,
The second grooves of 212-, 213- through holes, 214- second metal layers, 3- surface acoustic wave chips, 31- ontologies, 32- interdigital transducers,
33- weld pads, 34- convex blocks.
In Figure 10~Figure 12, the upper glass cover-plates of 11-, the first glass bodies of 111-, 112- the first metal layers, 113- bondings
Agent, 21- lower glass substrates, the second glass bodies of 211-, 212- grooves, 213- through holes, 214- second metal layers, 3- sound surface
Wave chip.
In Figure 13~Figure 15, the upper glass cover-plates of 11-, the first glass bodies of 111-, the upper glass cover-plates of 11-, the first glass of 111-
Glass ontology, 112- grooves, 113- the first metal layers, 114- adhesives, 21- lower glass substrates, the second glass bodies of 211- 212-
Through hole, 213- second metal layers, 3- surface acoustic wave chips.
Specific implementation mode
Present invention will now be described in further detail with reference to the embodiments and the accompanying drawings, but embodiments of the present invention are unlimited
In this.
Embodiment 1：
As shown in Fig. 3~Fig. 7, a kind of air-tightness surface acoustic wave device encapsulating structure is present embodiments provided, the encapsulation knot
Structure includes upper glass cover-plate array 1, lower glass substrate array 2 and five surface acoustic wave chips 3.
There are the upper glass cover-plate array 1 five pieces of upper glass cover-plates 11, every piece of upper glass cover-plate 11 to correspond to a sound table
Surface wave chip 3 comprising the first glass body 111, the first glass body 111 etch the first groove 112, first groove
The corresponding surface acoustic wave chip 3 of 112 faces, 111 inner surface of the first glass body deposition after etching have the first conductive layer, specifically
Ground, the first conductive layer generally use copper, molybdenum, tungsten, aluminum bronze, nickel etc. to be made, the first metal layer 113 are electroplate on the first conductive layer,
The first metal layer 113 is made of copper product, realizes the electromagnetic shielding to surface acoustic wave chip 3, therefore the first metal layer
113 can be considered electro-magnetic screen layer, while the first metal layer 113 can also play the role of reinforcing air-tightness, it is preferable that can also be
The metals such as 11 surface of upper glass cover-plate NiPdAu, nickel gold, silver are protected；Further, upper glass cover-plate 11 is carrying out
Printable adhesive paste 115 is gone back after metal processing, upper glass cover-plate array 1 and lower glass substrate array 2 can be made by adhesive 115
Alignment pressing is carried out, tin cream or nano-metal particle colloid may be used in adhesive 215, because the present embodiment technique is array
Encapsulation, product area is very big in time processing, can reach hundreds of millimeters, therefore does not consider that ultrasonic welds herein, and
It is to melt to gather to be formed, because the colloid of soldering paste or nano-metal particle exists using the colloid of tin cream welding or nano-metal particle
After solidification (melting), organic matter is all discharged, only remaining metal, therefore plays completely airtight effect, with glass material
A completely airtight encapsulating structure is formed together.
There are the lower glass substrate array 2 five pieces of lower glass substrates 21, every piece of lower glass substrate 21 to correspond to a sound table
Surface wave chip 3 comprising the second glass body 211, the second glass body 211 etch the second groove 212, second groove
212 for mounting corresponding surface acoustic wave chip 3, and 211 inner surface of the second glass body deposition after etching has the first conductive layer,
Specifically, the first conductive layer generally uses copper, molybdenum, tungsten, aluminum bronze, nickel etc. to be made, and second metal layer is electroplate on the first conductive layer
213, which is made of copper product, can be played the role of reinforcing air-tightness, be lost in second metal layer 213
Carve connection circuit；Preferably, it can also be protected in metals such as 21 surface of lower glass substrate NiPdAu, nickel gold, silver；Every
The lower surface of block lower glass substrate 21 is welded to using the form of planar grille on the circuit board of application apparatus；Further,
Air discharge duct is equipped between each piece of lower glass substrate 21 of lower glass substrate array 2, air discharge duct is especially by lower glass substrate 21
The amendment of form of metal designs, and avoids exhaust residual, influences adhesive strength.
Five the first grooves 112 of upper glass cover-plate array 1 and five the second grooves 212 of lower glass substrate array 2 divide
Not Xing Cheng five cavitys, each cavity corresponds to a surface acoustic wave chip 3, i.e. five surface acoustic wave chips 3 are located at five
In cavity, entire encapsulating structure is the symmetrical structure of a two-sided etching, due to upper glass cover-plate array 1 and lower glass substrate battle array
Row 2 all use glass material, therefore the encapsulating structure of the present embodiment is complete air-tight packaging structure, while surface acoustic wave core
The height of piece 3 is controlled by layer glass (upper glass cover-plate 11 and lower glass substrate 21), sound surface after contributing to reduction to encapsulate
The height of wave chip 3, especially surface acoustic wave chip 3 because design or difficulty of processing be difficult to be thinned in the case of, can be effective
The thickness of surface acoustic wave chip 3 is reduced, surface acoustic wave chip 3 is most thin can be to 0.4 millimeter or less.
Five surface acoustic wave chips 3 are surface acoustic wave wafer, and are mounted onto lower glass substrate array 2, specifically, often
Surface acoustic wave chip 3 includes the second ontology 31, interdigital transducer 32, weld pad 33 and convex block 34, and the second ontology 31 uses lithium salts
Material is made, and interdigital transducer 32 and weld pad 33, which are arranged to be easy to happen at the lower surface of the second ontology 31, cutting, to burst apart, especially
It is to be more easy to generation edge when stacked together with other kinds of material and burst apart, influence surface wave, therefore in the present embodiment
In, the wafer for carrying out interdigital transducer 32 and weld pad 33 is cut into separation in advance, convex block 34 is welded on weld pad 33, and convex block 34 is logical
It crosses at rewinding method and the second groove 212 of corresponding lower substrate 21 and is fixedly connected.
In the present embodiment, upper glass cover-plate array 1 and lower glass substrate array 2 are increased greatly by the way of directly pressing
The handling capacity for having added technique, to substantially increase production efficiency.
The present embodiment additionally provides a kind of production method of above-mentioned encapsulating structure, and this approach includes the following steps：
1) upper glass cover-plate array is processed.
1.1) on before the upper glass cover-plate processing of every piece of glass cover-plate array as shown in Figure 8 a, double to every piece of upper glass cover-plate
Face carries out photoresist coating, as shown in Figure 8 b.
1.2) every piece of upper glass cover-plate is exposed, developed, expose region to be etched, as shown in Figure 8 c.
1.3) every piece of upper glass cover-plate is etched using lye, forms the first groove of indent on upper glass cover-plate at every piece,
As shown in figure 8d.
1.4) demoulding is carried out to every piece of upper glass cover-plate, removes remaining photoresist.
1.5) the upper glass cover-plate inner surface depositing first conductive layer at every piece, generally uses copper, molybdenum, tungsten, aluminum bronze, nickel etc.,
Thickness is less than 5 microns, as figure 8 e shows.
1.6) the first metal layer is electroplated on the first conductive layer, the material of the first metal layer is copper, and thickness is on 10 microns of left sides
It is right.
1.7) to the surface of every piece of upper glass cover-plate into row metal processing, i.e., by metal to the table of every piece of upper glass cover-plate
Face is protected, and the metal that can be selected includes NiPdAu, nickel gold, silver etc..
1.8) after metal processing, the printing binder on upper glass cover-plate at every piece, adhesive can be soldering paste or receive
Rice metallic particles.
2) lower glass substrate is processed.
2.1) before every piece of lower glass substrate processing of lower glass substrate array as illustrated in fig. 9, for the first time to every block of lower glass
The two-sided carry out photoresist coating of substrate, as shown in figure 9b.
2.2) every piece of lower glass substrate is exposed for the first time, developed, expose region to be etched, as is shown in fig. 9 c.
2.3) the second groove of indent is etched in every piece of lower glass substrate using lye, as shown in figure 9d；Wherein, institute
The second groove is stated for mounting corresponding surface acoustic wave chip.
2.4) demoulding is carried out to every piece of lower glass substrate for the first time, removes remaining photoresist.
2.5) second of carry out photoresist coating two-sided to every piece of lower glass substrate, as shown in figure 9e.
2.6) every piece of lower glass substrate is exposed, is developed for second, exposing region to be etched, as shown in figure 9f.
2.7) through hole is etched in every piece of lower glass substrate using lye, as shown in figure 9g.
2.8) demoulding is carried out to every piece of lower glass substrate second, removes remaining photoresist；
2.9) conductive layer is deposited in the every piece of lower glass substrate surface and through hole for etching the second groove and through hole,
Generally using copper, molybdenum, tungsten, aluminum bronze, nickel etc., as shown in Fig. 9 h；
2.10) second metal layer is electroplated on the second conductive layer, the material of second metal layer is copper, until being filled out in through hole
It is full, to reduce the dead resistance under high frequency, as illustrated in fig. 9i.
2.11) because face copper plates blocked up, therefore etching face copper in the step 2.10), its thickness is made to drop to 10 microns of left sides
The right side, as shown in Fig. 9 k.
2.12) carry out photoresist coating two-sided to every piece of lower glass substrate for the third time, as shown in Fig. 9 k.
2.13) every piece of lower glass substrate is exposed for the third time, developed, expose region to be etched, as shown in Fig. 9 l.
2.14) connection circuit is etched in the second metal layer of every piece of lower glass substrate using lye, as shown in fig. 9m.
2.15) demoulding is carried out to every piece of lower glass substrate for the third time, removes remaining photoresist.
2.16) surface of every piece of lower glass substrate is handled into row metal.
3) by more surface acoustic wave chip attachment to lower glass substrate array of well cutting, to save height, reduction accounts for
Ground area, the present embodiment are mounted using rewinding method.
4) upper glass cover-plate array and lower glass substrate array under vacuum, are subjected to alignment pressing.
5) entire pressing structure is put into high-temperature cabinet internal heating curing.
It, can be by upper glass cover-plate array 2, lower glass substrate array 2 after the encapsulating structure of the present embodiment completes
And five surface acoustic wave chips 3 cut into five parts, every part forms a surface acoustic wave device product, as shown in Figure 4.
Embodiment 2：
The air-tightness surface acoustic wave device encapsulating structure of the present embodiment is mainly characterized by：As shown in Figure 10~Figure 12, upper glass
The upper glass cover-plate 11 of every piece of glass cover board array includes the first glass body 111, and the inner surface deposition of the first glass body 111 has
First conductive layer is electroplate with the first metal layer 112 on the first conductive layer, it is preferable that can also be in 11 surface nickel of upper glass cover-plate
The metals such as porpezite, nickel gold, silver are protected；Further, upper glass cover-plate 11 is into going back printable adhesive paste after row metal
113, upper glass cover-plate array can be made to carry out alignment pressing with lower glass substrate array by adhesive 113；Every piece of lower glass base
Plate 21 includes the second glass body 211, and the second glass body 211 etches groove 212 and through hole 213, and groove 212 is for pasting
Corresponding surface acoustic wave chip 3 is filled, deposition has the second conduction in 211 surface of the second glass body and through hole 213 after etching
Layer, it is electroplate with second metal layer 214 on the second conductive layer, connection circuit is etched in second metal layer 214, it can be seen that this reality
The encapsulating structure for applying example is the symmetrical structure that single side etches (upper surface of lower glass substrate 21).Remaining structure is the same as embodiment 1.
The present embodiment additionally provides a kind of production method of above-mentioned encapsulating structure, and this approach includes the following steps：
1) upper glass cover-plate array is processed.
1.1) in every piece of upper glass cover-plate array upper glass cover-plate inner surface depositing first conductive layer, generally use copper,
Molybdenum, tungsten, aluminum bronze, nickel etc., thickness are less than 5 microns.
1.2) the first metal layer is electroplated on the first conductive layer, the material of the first metal layer is copper, and thickness is on 10 microns of left sides
It is right.
1.3) to the surface of every piece of upper glass cover-plate into row metal processing, i.e., by metal to the table of every piece of upper glass cover-plate
Face is protected, and the metal that can be selected includes NiPdAu, nickel gold, silver etc..
1.4) after metal processing, the printing binder on upper glass cover-plate at every piece, adhesive can be soldering paste or receive
Rice metallic particles.
2) lower glass substrate is processed.
2.1) for the first time to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array.
2.2) every piece of lower glass substrate is exposed for the first time, developed, expose region to be etched.
2.3) the second groove of indent is etched in every piece of lower glass substrate using lye；Wherein, second groove
For mounting corresponding surface acoustic wave chip.
2.4) demoulding is carried out to every piece of lower glass substrate for the first time, removes remaining photoresist.
2.5) second of carry out photoresist coating two-sided to every piece of lower glass substrate.
2.6) every piece of lower glass substrate is exposed, is developed for second, exposing region to be etched.
2.7) using lye through hole is etched in every piece of lower glass substrate.
2.8) demoulding is carried out to every piece of lower glass substrate second, removes remaining photoresist；
2.9) conductive layer is deposited in the every piece of lower glass substrate surface and through hole for etching the second groove and through hole,
Generally using copper, molybdenum, tungsten, aluminum bronze, nickel etc.；
2.10) second metal layer is electroplated on the second conductive layer, the material of second metal layer is copper, until being filled out in through hole
It is full, to reduce the dead resistance under high frequency.
2.11) because face copper plates blocked up, therefore etching face copper in the step 2.10), its thickness is made to drop to 10 microns of left sides
It is right.
2.12) carry out photoresist coating two-sided to every piece of lower glass substrate for the third time.
2.13) every piece of lower glass substrate is exposed for the third time, developed, expose region to be etched.
2.14) connection circuit is etched in the second metal layer of every piece of lower glass substrate using lye.
2.15) demoulding is carried out to every piece of lower glass substrate for the third time, removes remaining photoresist.
2.16) surface of every piece of lower glass substrate is handled into row metal.
3) by more surface acoustic wave chip attachment to lower glass substrate array of well cutting, to save height, reduction accounts for
Ground area, the present embodiment are mounted using rewinding method.
4) upper glass cover-plate array and lower glass substrate array under vacuum, are subjected to alignment pressing.
5) entire pressing structure is put into high-temperature cabinet internal heating curing.
Embodiment 3：
The air-tightness surface acoustic wave device encapsulating structure of the present embodiment is mainly characterized by：As shown in Figure 13~Figure 15, upper glass
The upper glass cover-plate 11 of every piece of glass cover board array includes the first glass body 111, and the first glass body 111 etches groove 112,
The corresponding surface acoustic wave chip 3 of 112 face of groove, 111 inner surface of the first glass body deposition after etching have the first conductive layer,
The first metal layer 113 is electroplate on first conductive layer, it is preferable that can also be in 11 surface NiPdAu of upper glass cover-plate, nickel gold, silver
Equal metals are protected；Further, upper glass cover-plate 11 passes through bonding into printable adhesive paste 114 is gone back after row metal
Agent 114 can make glass cover-plate array carry out alignment pressing with lower glass substrate array；Every piece of lower glass substrate 21 includes second
Glass body 211, the second glass body 211 etch through hole 212,211 surface of the second glass body after etching and run through
Deposition has the second conductive layer in hole 212, and second metal layer 213 is electroplate on the second conductive layer, is etched in second metal layer 213
Connect circuit, it can be seen that the encapsulating structure of the present embodiment is the symmetrical junction of single side etching (lower surface of upper glass cover-plate 11)
Structure.Remaining structure is the same as embodiment 1.
The present embodiment additionally provides a kind of production method of above-mentioned encapsulating structure, and this approach includes the following steps：
1) upper glass cover-plate array is processed.
1.1) to every piece of two-sided carry out photoresist coating of upper glass cover-plate of upper glass cover-plate array.
1.2) every piece of upper glass cover-plate is exposed, developed, expose region to be etched.
1.3) every piece of upper glass cover-plate is etched using lye, forms the groove of indent on upper glass cover-plate at every piece.
1.4) demoulding is carried out to every piece of upper glass cover-plate, removes remaining photoresist.
1.5) the upper glass cover-plate inner surface depositing first conductive layer at every piece, generally uses copper, molybdenum, tungsten, aluminum bronze, nickel etc.,
Thickness is less than 5 microns.
1.6) the first metal layer is electroplated on the first conductive layer, the material of the first metal layer is copper, and thickness is on 10 microns of left sides
It is right.
1.7) to the surface of every piece of upper glass cover-plate into row metal processing, i.e., by metal to the table of every piece of upper glass cover-plate
Face is protected, and the metal that can be selected includes NiPdAu, nickel gold, silver etc..
1.8) after metal processing, the printing binder on upper glass cover-plate at every piece, adhesive can be soldering paste or receive
Rice metallic particles.
2) lower glass substrate is processed.
2.1) for the first time to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array.
2.2) every piece of lower glass substrate is exposed for the first time, developed, expose region to be etched.
2.3) using lye through hole is etched in every piece of lower glass substrate.
2.4) demoulding is carried out to every piece of lower glass substrate for the first time, removes remaining photoresist；
2.5) conductive layer is deposited in the every piece of lower glass substrate surface and through hole for etching through hole, it is general to use
Copper, molybdenum, tungsten, aluminum bronze, nickel etc.；
2.6) second metal layer is electroplated on the second conductive layer, the material of second metal layer is copper, until being filled out in through hole
It is full, to reduce the dead resistance under high frequency.
2.7) because face copper plates blocked up, therefore etching face copper in the step 2.6), its thickness is made to drop to 10 microns.
2.8) second of carry out photoresist coating two-sided to every piece of lower glass substrate.
2.9) every piece of lower glass substrate is exposed, is developed for second, exposing region to be etched.
2.10) connection circuit is etched in the second metal layer of every piece of lower glass substrate using lye.
2.11) demoulding is carried out to every piece of lower glass substrate second, removes remaining photoresist.
2.12) surface of every piece of lower glass substrate is handled into row metal.
3) by more surface acoustic wave chip attachment to lower glass substrate array of well cutting, to save height, reduction accounts for
Ground area, the present embodiment are mounted using rewinding method.
4) upper glass cover-plate array and lower glass substrate array under vacuum, are subjected to alignment pressing.
5) entire pressing structure is put into high-temperature cabinet internal heating curing.
In conclusion this invention simplifies the encapsulation flow of traditional SAW device, using upper glass cover-plate array and
The mode that lower glass substrate array directly presses substantially increases production efficiency, while the structure after pressing forms a plurality of cavities,
Each cavity can accommodate a surface acoustic wave chip, so that surface acoustic wave chip is sealed, the height of surface acoustic wave chip is by two layers
Glass controls, and helps to reduce the height of surface acoustic wave chip after encapsulating, especially in surface acoustic wave chip because of design or
Difficulty of processing is difficult in the case of being thinned, and can effectively reduce the thickness of surface acoustic wave chip, surface acoustic wave chip is most thin to be arrived
0.4 millimeter or less；In addition, replacing expensive metallic shield lid and high temperature co-firing to make pottery using upper glass cover-plate and lower glass substrate
Porcelain helps reduction material cost.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range that patent specification of the present invention is recorded.
The several embodiments of patent of the present invention above described embodiment only expresses, the description thereof is more specific and detailed,
But it cannot be construed as a limitation to the scope of the present invention.It should be pointed out that for the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the present invention
The protection domain of patent.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of air-tightness surface acoustic wave device encapsulating structure, it is characterised in that：Including upper glass cover-plate array, lower glass substrate
Array and more surface acoustic wave chips, in the more surface acoustic wave chip attachment to lower glass substrate array, the upper glass
Cover board array is directed at pressing with lower glass substrate array by adhesive, forms a plurality of cavities, the polylith of upper glass cover-plate array
Upper glass cover-plate, the polylith lower glass substrate of lower glass substrate array, more surface acoustic wave chips and a plurality of cavities are one by one
Corresponding, the surface acoustic wave chip is located in corresponding cavity.
2. a kind of air-tightness surface acoustic wave device encapsulating structure according to claim 1, it is characterised in that：
The upper glass cover-plate of every piece of the upper glass cover-plate array includes the first glass body, and first glass body etches
First groove, the corresponding surface acoustic wave chip of the first groove face, the first glass body inner surface deposition after etching have
First conductive layer is electroplate with the first metal layer on first conductive layer；
Every piece of lower glass substrate of the lower glass substrate array includes the second glass body, and second glass body etches
Second groove and through hole, second groove is for mounting corresponding surface acoustic wave chip, the second glass body after etching
Deposition has the second conductive layer in surface and through hole, and second metal layer, second metal are electroplate on second conductive layer
Connection circuit is etched on layer.
3. a kind of air-tightness surface acoustic wave device encapsulating structure according to claim 1, it is characterised in that：
The upper glass cover-plate of every piece of the upper glass cover-plate array includes the first glass body, the interior table of first glass body
Face deposition has the first conductive layer, and the first metal layer is electroplate on first conductive layer；
Every piece of lower glass substrate of the lower glass substrate array includes the second glass body, and second glass body etches
Groove and through hole, the groove the second glass body surface after etching and are passed through for mounting corresponding surface acoustic wave chip
Deposition has the second conductive layer in perforation, and second metal layer is electroplate on second conductive layer, is etched in the second metal layer
Go out to connect circuit.
4. a kind of air-tightness surface acoustic wave device encapsulating structure according to claim 1, it is characterised in that：
The upper glass cover-plate of every piece of the upper glass cover-plate array includes the first glass body, and first glass body etches
Groove, the corresponding surface acoustic wave chip of the groove face, the first glass body inner surface deposition after etching have the first conduction
Layer, it is electroplate with the first metal layer on first conductive layer；
Every piece of lower glass substrate of the lower glass substrate array includes the second glass body, and second glass body etches
Through hole, the interior deposition in the second glass body surface and through hole after etching have the second conductive layer, second conductive layer to power on
It is coated with second metal layer, connection circuit is etched in the second metal layer.
5. according to a kind of air-tightness surface acoustic wave device encapsulating structure of claim 1-4 any one of them, it is characterised in that：Often
Surface acoustic wave chip includes ontology, interdigital transducer, weld pad and convex block, and the interdigital transducer and weld pad are arranged at second
The lower surface of body, the weld tabs are on weld pad, and convex block is fixedly connected by rewinding method with corresponding lower substrate.
6. according to a kind of air-tightness surface acoustic wave device encapsulating structure of claim 1-4 any one of them, it is characterised in that：Institute
It states and is equipped with air discharge duct between each piece of lower glass substrate of lower glass substrate array.
7. according to a kind of air-tightness surface acoustic wave device encapsulating structure of claim 1-4 any one of them, it is characterised in that：Institute
State the colloid that adhesive is tin cream or nano-metal particle.
8. the production method of encapsulating structure described in a kind of claim 2, it is characterised in that：The method includes；
Upper glass cover-plate array is processed；
Lower glass substrate array is processed：
It will be in more surface acoustic wave chip attachment to lower glass substrate array of well cutting；
Under vacuum, upper glass cover-plate array and lower glass substrate array are subjected to alignment pressing；
Entire pressing structure is put into high-temperature cabinet internal heating curing；
Wherein, described pair of upper glass cover-plate array is processed, and is specifically included：
Every piece of two-sided carry out photoresist coating of upper glass cover-plate to upper glass cover-plate array；
Every piece of upper glass cover-plate of upper glass cover-plate array is exposed, is developed, region to be etched is exposed；
Every piece of upper glass cover-plate that upper glass cover-plate array is etched using lye forms the of indent at every piece on upper glass cover-plate
One groove；
Demoulding is carried out to every piece of upper glass cover-plate of upper glass cover-plate array, removes remaining photoresist；
In every piece of upper glass cover-plate inner surface depositing first conductive layer of upper glass cover-plate array；
The first metal layer is electroplated on the first conductive layer of every piece of upper glass cover-plate of upper glass cover-plate array；
The surface of every piece of upper glass cover-plate of upper glass cover-plate array is handled into row metal；
The printing binder on every piece of upper glass cover-plate of upper glass cover-plate array；
Wherein, described that lower glass substrate array is processed, it specifically includes：
For the first time to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the first time, exposes region to be etched；
The second groove of indent is etched in every piece of lower glass substrate of lower glass substrate array using lye；Wherein, described
Second groove is for mounting corresponding surface acoustic wave chip；
Demoulding is carried out to every piece of lower glass substrate of lower glass substrate array for the first time, removes remaining photoresist；
Second to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the second time, exposes region to be etched；
Using lye through hole is etched in every piece of lower glass substrate of lower glass substrate array；
Second of every piece of lower glass substrate to lower glass substrate array carries out demoulding, removes remaining photoresist；
The deposit second conductive layer in the surface of every piece of lower glass substrate of lower glass substrate array and through hole；
Second metal layer is electroplated on the second conductive layer of every piece of lower glass substrate of lower glass substrate array, until in through hole
It fills up；
Third time is to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Third time is exposed every piece of lower glass substrate of lower glass substrate array, develops, and exposes region to be etched；
Using lye connection circuit is etched in the second metal layer of every piece of lower glass substrate of lower glass substrate array；
Third time carries out demoulding to every piece of lower glass substrate of lower glass substrate array, removes remaining photoresist；
The surface of every piece of lower glass substrate of lower glass substrate array is handled into row metal.
9. the production method of encapsulating structure described in a kind of claim 3, it is characterised in that：The method includes；
Upper glass cover-plate array is processed；
Lower glass substrate array is processed：
It will be in more surface acoustic wave chip attachment to lower glass substrate array of well cutting；
Under vacuum, upper glass cover-plate array and lower glass substrate array are subjected to alignment pressing；
Entire pressing structure is put into high-temperature cabinet internal heating curing；
Wherein, described pair of upper glass cover-plate array is processed, and is specifically included：
In every piece of upper glass cover-plate inner surface depositing first conductive layer of upper glass cover-plate array；
The first metal layer is electroplated on the first conductive layer of every piece of upper glass cover-plate of upper glass cover-plate array；
The surface of every piece of upper glass cover-plate of upper glass cover-plate array is handled into row metal；
The printing binder on every piece of upper glass cover-plate of upper glass cover-plate array；
Wherein, described that lower glass substrate array is processed, it specifically includes：
For the first time to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the first time, exposes region to be etched；
The groove of indent is etched in every piece of lower glass substrate of lower glass substrate array using lye；Wherein, the groove
For mounting corresponding surface acoustic wave chip；
Demoulding is carried out to every piece of lower glass substrate of lower glass substrate array for the first time, removes remaining photoresist；
Second to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the second time, exposes region to be etched；
Using lye through hole is etched in every piece of lower glass substrate of lower glass substrate array；
Second of every piece of lower glass substrate to lower glass substrate array carries out demoulding, removes remaining photoresist；
The deposit second conductive layer in the surface of every piece of lower glass substrate of lower glass substrate array and through hole；
Second metal layer is electroplated on the second conductive layer of every piece of lower glass substrate of lower glass substrate array, until in through hole
It fills up；
Third time is to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Third time is exposed every piece of lower glass substrate of lower glass substrate array, develops, and exposes region to be etched；
Using lye connection circuit is etched in the second metal layer of every piece of lower glass substrate of lower glass substrate array；
Third time carries out demoulding to every piece of lower glass substrate of lower glass substrate array, removes remaining photoresist；
The surface of every piece of lower glass substrate of lower glass substrate array is handled into row metal.
10. the production method of encapsulating structure described in a kind of claim 4, it is characterised in that：The method includes；
Upper glass cover-plate array is processed；
Lower glass substrate array is processed：
It will be in more surface acoustic wave chip attachment to lower glass substrate array of well cutting；
Under vacuum, by upper glass cover-plate array and the radical type alignment pressing of lower glass substrate array；
Entire pressing structure is put into high-temperature cabinet internal heating curing；
Wherein, described pair of upper glass cover-plate array is processed, and is specifically included：
Every piece of two-sided carry out photoresist coating of upper glass cover-plate to upper glass cover-plate array；
Every piece of upper glass cover-plate of upper glass cover-plate array is exposed, is developed, region to be etched is exposed；
Every piece of upper glass cover-plate that upper glass cover-plate array is etched using lye, the recessed of indent is formed at every piece on upper glass cover-plate
Slot；
Remove the photoresist of every piece of upper glass cover-plate remnants of upper glass cover-plate array；
In every piece of upper glass cover-plate inner surface depositing first conductive layer of upper glass cover-plate array；
The first metal layer is electroplated on the first conductive layer of every piece of upper glass cover-plate of upper glass cover-plate array；
The surface of every piece of upper glass cover-plate of upper glass cover-plate array is handled into row metal；
The printing binder on every piece of upper glass cover-plate of upper glass cover-plate array；
Wherein, described that lower glass substrate array is processed, it specifically includes：
For the first time to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the first time, exposes region to be etched；
Using lye through hole is etched in every piece of lower glass substrate of lower glass substrate array；
Demoulding is carried out to every piece of lower glass substrate of lower glass substrate array for the first time, removes remaining photoresist；
The deposit second conductive layer in the surface of every piece of lower glass substrate of lower glass substrate array and through hole；
Second metal layer is electroplated on the second conductive layer of every piece of lower glass substrate of lower glass substrate array, until in through hole
It fills up；
Second to the two-sided carry out photoresist coating of every piece of lower glass substrate of lower glass substrate array；
Every piece of lower glass substrate of lower glass substrate array is exposed, is developed for the second time, exposes region to be etched；
Using lye connection circuit is etched in the second metal layer of every piece of lower glass substrate of lower glass substrate array；
Second of every piece of lower glass substrate to lower glass substrate array carries out demoulding, removes remaining photoresist；
The surface of every piece of lower glass substrate of lower glass substrate array is handled into row metal.
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| CN112017974A (en) * | 2019-05-28 | 2020-12-01 | 开元通信技术（厦门）有限公司 | Chip packaging structure and packaging method |
| WO2020237499A1 (en) * | 2019-05-28 | 2020-12-03 | 开元通信技术（厦门）有限公司 | Chip encapsulation structure and encapsulation method |
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