CN108768302A - One kind removing three injection locking frequency dividers - Google Patents
One kind removing three injection locking frequency dividers Download PDFInfo
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- CN108768302A CN108768302A CN201810477699.9A CN201810477699A CN108768302A CN 108768302 A CN108768302 A CN 108768302A CN 201810477699 A CN201810477699 A CN 201810477699A CN 108768302 A CN108768302 A CN 108768302A
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- inductance
- injection
- transistor
- peaking
- frequency
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
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Abstract
The invention discloses one kind removing three injection locking frequency dividers, characterized in that including an inductance capacitance resonant cavity, two injection transistors, a negative resistance circuit constituted except frequency-halving circuit, two peaking inductances and a pair of cross coupled transistor；The negative resistance circuit is connected with the inductance for being connected on injection transistor both ends；The public source except frequency-halving circuit and two injection transistors is connected.The advantageous effect that the present invention is reached：1) peaking inductance circuit can reduce the dead zone voltage of injection transistor, reduce the parasitic capacitance of injection transistor, increase effective mutual conductance, improve the injection efficiency and energy of second harmonic, to increase the working range of injection transistor；2) second harmonic exports together with the signal obtained after transistor mixing after filtered device after except two divided-frequency with by injecting, and further improves the lock-in range of circuit.
Description
Technical field
The present invention relates to one kind removing three injection locking frequency dividers, belongs to frequency synthesizer technical field.
Background technology
The high speed development wirelessly communicated now, the demand to signal broadband is increasing, frequency synthesizer and its core mould
Block frequency divider there is decisive role, the quality of performance to directly affect the work performance of whole system and answer system performance
Use foreground.
Existing analogous frequency divider structure includes mainly：Current mode logic frequency divider, regenerative frequency divider, injection locking point
Frequency device etc..The characteristics of wherein injection locking frequency divider is because of its high-speed low-power-consumption low noise, by favor in frequency applications, simultaneously
Except three injection locking frequency dividers have the characteristics that flexible structure and durability are high on this basis, future wireless system ring will be become
The important component in border, while being also unique alternative circuit structure in some design applications.However, its relatively narrow lock
It is always to limit the principal element of its use scope to determine range；Simultaneously the past to its most of Improvement be all by using
Linear mixer or increase its lock-in range using tuned cell, circuit structure complexity power consumption is larger.
Invention content
To solve the deficiencies in the prior art, the purpose of the present invention is to provide one kind removing three injection locking frequency dividers, has
The characteristics of lock-in range of bigger, lower circuit complexity.
In order to realize that above-mentioned target, the present invention adopt the following technical scheme that：
One kind removing three injection locking frequency divider circuits, characterized in that including：
(1) inductance capacitance resonant cavity：Built-up circuit is sequentially connected by inductance L1, inductance L5, inductance L2 and capacitance C1；
(2) two injection transistors：The source of two injection transistors M1, M2 are connected, and form public source A；Injection letter
The grid for number injecting transistor M1, M2 at two in such a way that difference is injected is directly injected into frequency tripling signal, passes through transistor
Mixer action generates second harmonic in public source A；
(3) two peaking inductances L3, L4：It is serially connected in the drain electrode of injection transistor M1, M2, the input terminal of each peaking inductance
It is connected with the drain electrode of an injection transistor, one connection output node V of output end of two peaking inductancesOUT+, another company
Meet output node VOUT-；
The peaking inductance L3 and inductance L1 forms coupling inductance, one end that peaking inductance L3 and inductance L1 links together
For in-phase end；Peaking inductance L4 forms coupling inductance with inductance L2, and the one end to link together peaking inductance L4 and inductance L2 is
In-phase end；
(4) one are removed frequency-halving circuit：Input terminal is connected with public source A, and output end is separately connected output node
VOUT+And VOUT-, the public source A second harmonics generated are carried out removing two divided-frequency；
(5) negative resistance circuit：It is formed by two NMOS transistor M3, M4 cross-couplings, is attempted by the two of two peaking inductances
End provides oscillation required energy.
It is above-mentioned a kind of except three injection locking frequency divider circuits, characterized in that described brilliant using injection except frequency-halving circuit
Body pipe M7, grid are connected as input terminal with public source A, and drain electrode is connected with inductance L3, and source electrode is connected with inductance L4, right
The second harmonic generated at public source A carries out removing two divided-frequency.
It is above-mentioned a kind of except three injection locking frequency divider circuits, characterized in that the complete phases of described injection transistor M1, M2
Together.
It is above-mentioned a kind of except three injection locking frequency divider circuits, characterized in that the output node VOUT+And VOUT-It is all made of
Transistor.
The advantageous effect that the present invention is reached：1) mode of both-end injection is effectively utilized the input signal of preceding pole VCO, carries
High Implantation Energy；2) peaking inductance circuit can reduce the dead zone voltage of injection transistor, reduce the parasitism electricity of injection transistor
Hold, increase effective mutual conductance, improve the injection efficiency and energy for being directly injected into transistor, to increase the work model of injection transistor
It encloses；3) second harmonic is defeated after filtered device together with the frequency obtained after by injection transistor mixing after except two divided-frequency
Go out, further improves the lock-in range of circuit；4) compared with traditional except three injection locking frequency dividers, circuit structure of the present invention
Simply, while ensureing lower power consumption, larger lock-in range is still ensured that.
Description of the drawings
Fig. 1 is the structural schematic diagram of the present invention；
Fig. 2 is the sensitivity curve except tri-frequency divider；
Fig. 3 is the input-output curve except tri-frequency divider.
Specific implementation mode
The invention will be further described below in conjunction with the accompanying drawings.Following embodiment is only used for clearly illustrating the present invention
Technical solution, and not intended to limit the protection scope of the present invention.
As shown in Figure 1 is that a wide range of of the present invention removes three injection locking frequency dividers, when reality connects, if by transistor
Drain electrode and source electrode swap, and the technique effect of the technical program can be reached.
By injection locking principle it is found that injection transistor is equivalent to frequency mixer in injecting lock-in circuit, therefore in this hair
Bright middle be used as using two identical NMOS injects transistor, and 3 ω are carried out in grid by way of difference injection0Signal
Injection, with ω0It is mixed, the public source A that transistor is injected at two obtains frequency as 2 ω0Signal.
2 ω that public source A will be obtained0It feeds back in mixting circuit, 3 ω with injection M1, M20It is mixed, is finally led to
Cross mixer action (3 ω of frequency mixer0-2ω0) obtain stable output signal ω0, realize and basic remove three frequency division.
2 ω that public source A will be obtained0Signal ω is obtained after removing frequency-halving circuit0, and with ω obtained above0One
With output, lock-in range is increased.
The main improvement of circuit exists：By using the second harmonic generated in circuit, it is carried out to remove two divided-frequency；It will remove again
Signal after two divided-frequency filters latter same output with by injecting the filtered device of transistor mixed signal, and three are removed to increase
The lock-in range of injection locking frequency divider.The effect of one of inductance capacitance resonant cavity in this structure just acts as filtering
Device, filter eventually by buffer (M5, M6) after bandpass filtering by exporting the signal needed.
The sensitivity curve of signal is as shown in Fig. 2, the waveform output and input is as shown in Figure 3.By Fig. 2 analyses it is found that originally
The lock-in range of invention is 15.8GHz-23.3GHz；It is analyzed it is found that in lock-in range by Fig. 3, output circuit is to input circuit
Into line trace, locking is completed；Input signal remains the relationship of three frequency division with output signal i.e. in lock-in range.
In order to expand the lock-in range for removing tri-frequency divider, the present invention carries out enhancing and effective utilization to second harmonic.Tool
Body is embodied as：
(1) peaking inductance (L3, L4) is sealed in the drain terminal of injection transistor respectively, the both ends of inductance (L3, L4) connect respectively
Meet output node VOUT+And VOUT-.Injection efficiency is related with the injection drain parasitic capacitance of transistor, the smaller mutual conductance of parasitic capacitance
Bigger, the efficiency being directly injected into is higher.Inductance L3, L4, which is added, to reduce parasitism electricity of the injection transistor in entire circuit
Hold, while forming coupling inductance with inductance (L1, L2) respectively, increases effective mutual conductance of transistor.
(2) grid of a transistor is connected with the public source of injection transistor, two injection transistors are public
The second harmonic that source generates is realized as Injection Signal and removes two divided-frequency；Again by except after two divided-frequency signal with pass through inject it is brilliant
Signal after the mixing of body pipe is latter with output by filter filtering.
(3) tri-frequency divider that removes of the invention uses on-chip inductor capacitor resonance, can generate local oscillation signal；It also can be used as simultaneously
Filter after mixing, filters out non-ideal signal, ensures the reliability and stability of circuit.Subtract to a certain extent and has descended circuit
Power consumption and complexity.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (4)
1. one kind removing three injection locking frequency divider circuits, characterized in that including：
(1) inductance capacitance resonant cavity：Built-up circuit is sequentially connected by inductance L1, inductance L5, inductance L2 and capacitance C1；
(2) two injection transistors：The source of two injection transistors M1, M2 are connected, and form public source A；Injection Signal with
The grid that the mode of difference injection injects transistor M1, M2 at two is directly injected into frequency tripling signal, passes through the mixing of transistor
Effect generates second harmonic in public source A；
(3) two peaking inductances L3, L4：It is serially connected in the drain electrode of injection transistor M1, M2, the input terminal of each peaking inductance and one
The drain electrode of a injection transistor is connected, one connection output node V of output end of two peaking inductancesOUT+, another connection is defeated
Egress VOUT-；
The peaking inductance L3 and inductance L1 forms coupling inductance, and one end that peaking inductance L3 and inductance L1 links together is same
Xiang Duan；Peaking inductance L4 and inductance L2 forms coupling inductance, and one end that peaking inductance L4 and inductance L2 links together is same phase
End；
(4) one are removed frequency-halving circuit：Input terminal is connected with public source A, and output end is separately connected output node VOUT+With
VOUT-, the public source A second harmonics generated are carried out removing two divided-frequency；
(5) negative resistance circuit：It is formed by two NMOS transistor M3, M4 cross-couplings, is attempted by the both ends of two peaking inductances, carries
For vibrating required energy.
2. according to claim 1 a kind of except three injection locking frequency divider circuits, characterized in that described to remove frequency-halving circuit
Using injection transistor M7, grid is connected as input terminal with public source A, and drain electrode is connected with inductance L3, source electrode and inductance
L4 is connected, and carries out removing two divided-frequency to the second harmonic generated at public source A.
3. according to claim 1 a kind of except three injection locking frequency divider circuits, characterized in that the injection transistor
M1, M2 are identical.
4. according to claim 1 a kind of except three injection locking frequency divider circuits, characterized in that the output node VOUT+
And VOUT-It is all made of transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810477699.9A CN108768302A (en) | 2018-05-18 | 2018-05-18 | One kind removing three injection locking frequency dividers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810477699.9A CN108768302A (en) | 2018-05-18 | 2018-05-18 | One kind removing three injection locking frequency dividers |
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| Publication Number | Publication Date |
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| CN108768302A true CN108768302A (en) | 2018-11-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810477699.9A Pending CN108768302A (en) | 2018-05-18 | 2018-05-18 | One kind removing three injection locking frequency dividers |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560774A (en) * | 2018-11-28 | 2019-04-02 | 电子科技大学 | It is a kind of to realize the injection locking frequency dividers of different frequency dividing ratio functions in different frequency range |
| CN112787659A (en) * | 2020-12-30 | 2021-05-11 | 瑞声科技（南京）有限公司 | Three-frequency divider circuit |
| CN112953395A (en) * | 2021-03-25 | 2021-06-11 | 华南理工大学 | Inverse F-class voltage-controlled oscillator and chip |
Citations (4)
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| US20070257735A1 (en) * | 2006-05-03 | 2007-11-08 | National Central University | High frequency divider with input-sensitivity compensation |
| CN102710260A (en) * | 2012-06-21 | 2012-10-03 | 复旦大学 | Divide-by-four injection locked frequency divider circuit with low power consumption and wide lock range |
| US20130307630A1 (en) * | 2010-10-21 | 2013-11-21 | Nanyang Technological University | Integrated Circuit Architecture with Strongly Coupled LC Tanks |
| CN106409829A (en) * | 2015-07-27 | 2017-02-15 | 香港城市大学 | Facilitation of increased locking range transistors |
-
2018
- 2018-05-18 CN CN201810477699.9A patent/CN108768302A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070257735A1 (en) * | 2006-05-03 | 2007-11-08 | National Central University | High frequency divider with input-sensitivity compensation |
| US20130307630A1 (en) * | 2010-10-21 | 2013-11-21 | Nanyang Technological University | Integrated Circuit Architecture with Strongly Coupled LC Tanks |
| CN102710260A (en) * | 2012-06-21 | 2012-10-03 | 复旦大学 | Divide-by-four injection locked frequency divider circuit with low power consumption and wide lock range |
| CN106409829A (en) * | 2015-07-27 | 2017-02-15 | 香港城市大学 | Facilitation of increased locking range transistors |
Non-Patent Citations (2)
| Title |
|---|
| A. GARGHETTI: "A Low-Power and Wide-Locking-Range Injection-Locked Frequency Divider by Three with Dual-Injection Divide-by-Two Technique", 《 2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)》 * |
| SHENG-LYANG JANG: "Wide-Locking Range Divide-by-3 Injection-Locked Frequency Divider Through Enhanced 2nd Harmonic", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS 》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109560774A (en) * | 2018-11-28 | 2019-04-02 | 电子科技大学 | It is a kind of to realize the injection locking frequency dividers of different frequency dividing ratio functions in different frequency range |
| CN109560774B (en) * | 2018-11-28 | 2021-09-14 | 电子科技大学 | Injection locking frequency divider capable of realizing different frequency division ratio functions in different frequency bands |
| CN112787659A (en) * | 2020-12-30 | 2021-05-11 | 瑞声科技（南京）有限公司 | Three-frequency divider circuit |
| CN112953395A (en) * | 2021-03-25 | 2021-06-11 | 华南理工大学 | Inverse F-class voltage-controlled oscillator and chip |
| CN112953395B (en) * | 2021-03-25 | 2022-05-24 | 华南理工大学 | Inverse F-class voltage-controlled oscillator and chip |
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Application publication date: 20181106 |