CN108767049A - 一种基于碳纳米管/石墨烯肖特基结的高性能光电器件 - Google Patents

一种基于碳纳米管/石墨烯肖特基结的高性能光电器件 Download PDF

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CN108767049A
CN108767049A CN201810502999.8A CN201810502999A CN108767049A CN 108767049 A CN108767049 A CN 108767049A CN 201810502999 A CN201810502999 A CN 201810502999A CN 108767049 A CN108767049 A CN 108767049A
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苏言杰
蔡葆昉
陶泽军
张亚非
杨志
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Shanghai Carbon Technology Co ltd
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Abstract

本发明涉及一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，包括：绝缘性基底，设置在绝缘性基底上表面两侧的电极对，位于电极对之间的碳纳米管网络，位于碳纳米管网络内的呈岛状的石墨烯。与现有技术相比，本发明采用岛状石墨烯与碳纳米管网络形成肖特基结构使得碳纳米管中的光生空穴转移并被限制于岛状石墨烯，大幅度降低了光生载流子复合几率，同时大幅降低由连续石墨烯作为导电沟道导致的暗电流，进而提高器件的光电性能。

Description

一种基于碳纳米管/石墨烯肖特基结的高性能光电器件
技术领域
本发明属于半导体光电器件技术领域，尤其是涉及一种基于碳纳米管/石墨烯肖特基结的高性能光电器件。
背景技术
半导体性碳纳米管具有较宽的带隙、高载流子迁移率、高热导率、大的光吸收系数和优异的化学稳定性，被认为构建下一代光电子器件的理想材料。尤其是，单壁碳纳米管(SWCNTs)为直径带隙半导体且与其直径成反比，通过选择合适直径的SWCNTs即可构筑高性能近红外-短波红外光电器件。碳纳米管的光吸收系数(104～105cm-1)比传统窄带隙半导体高一个数量级，有望采用超薄碳纳米管薄膜制作半透明光电探测器件。另外，已有理论和实验证实高能光子激发SWCNTs可产生多重光生电子空穴对(也即多激子效应)，这将对构筑超高性能SWCNTs基光电器件提供可能。
SWCNTs基光电探测器内光吸收体可分为单根SWCNT、取向SWCNT阵列式、SWCNTs网络和SWCNTs薄膜等四类，与前两种相比，SWCNTs网络和SWCNTs薄膜由于工艺简单而更利于低成本、大面积用于构筑器件。为了提高器件的光电转换性能，需要构建异质结结构促进光生电子空穴对的分离与输运。这其中低维纳米碳(富勒烯、石墨烯)具有与SWCNTs相近的sp2结构而易于形成较强的电子耦合作用，受到广泛关注。研究证实碳纳米管与石墨烯间具有高效的电荷转移效率，Zhang等人报道了基于SWCNT薄膜/石墨烯肖特基结的可见-近红外光电探测器(Sci.Rep.2016,6:38569)。但由于较厚的SWCNTs薄膜与石墨烯薄膜直接分别连接电极两端，器件的光电响应度0.209AW-1而暗电流在1V偏压下则达到微安量级，严重限制了其可探测率的提高。王枫秋等人公开了一种石墨烯基红外光探测器件(CN201510150620.8)，该器件以半导体性碳纳米管为光吸收层，石墨烯为载流子输运通道。尽管采用碳纳米管/石墨烯肖特基结构，但碳纳米管仅作为光吸收层且不与源漏电极相连。光生载流子必须经过连接于源漏电极间的石墨烯传导至外电路。而石墨烯的超高导电性使得器件暗电流较大，限制了器件可探测率的提高。
发明内容
本发明的目的就是为了克服上述现有技术存在的缺陷而提供一种基于碳纳米管/石墨烯肖特基结的高性能光电器件。
本发明的目的可以通过以下技术方案来实现：
一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，包括：
绝缘性基底，例如可以采用Si/SiO2衬底，
设置在绝缘性基底上表面两侧的Au电极对，
位于电极对之间的碳纳米管网络，利用碳纳米管网络作为光电子输运沟道，
位于碳纳米管网络内呈岛状的石墨烯，利用岛状石墨烯起到降低载流子复合几率作用，并且与两侧的电极对不连接，从而可以降低由连续石墨烯作为导电沟道引起的较大暗电流，进而大幅度提高器件的光电性能，这是本申请最关键的技术要点。
所述石墨烯为化学气相沉积法制备的高质量石墨烯。
所述石墨烯为随机性碎片结构，散落在碳纳米管网络中，或者为图形化的阵列结构，碳纳米管网络与岛状石墨烯的上下顺序可以互换，石墨烯位于碳纳米管网络上方或下方。
所述碳纳米管网络由半导体性单壁碳纳米管和/或半导体性双壁碳纳米管组成，通过旋涂法、湿法转移或滴涂法获得，厚度为1-15nm，以便和碳纳米管间载流子的平均自由程处于同一量级。
该种光电器件可以作为光电导式或场效应晶体管式光电探测器使用。
现有技术以薄膜石墨烯为导电通道，发挥了石墨烯超快载流子迁移的优势但也导致了大的暗态电流。与之相比，本发明采用碳纳米管网络一方面能够提高碳纳米管的光吸收，另一方面使得光生载流子沿平面方向传输，避免了垂直碳纳米管网络方向激子扩散长度的限制。更重要的是，碳纳米管与石墨烯间具有高效的电荷转移效率，光照条件下空穴转移并被限制于岛状石墨烯，大幅度降低光生载流子复合几率，同时降低由连续石墨烯作为导电沟道引起的较大暗电流，进而大幅度提高器件的光电性能。
附图说明
图1为实施例1所提供的光电导器件示意图；
图2为实施例1所构筑的光电探测器在1064nm光辐照前后电流-电压曲线；
图3为实施例1所构筑的光电探测器在1064nm光辐照条件下光电响应时间；
图4为实施例2所提供的场效应晶体管式光电器件示意图。
图中，1-绝缘性基底、2-碳纳米管网络、3-岛状石墨烯、4-电极、5-源极、6-漏极、7-栅极介电层、8-栅极。
具体实施方式
下面结合具体实施例对本发明进行详细说明。以下实施例将有助于本领域的技术人员进一步理解本发明，但不以任何形式限制本发明。应当指出的是，对本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进。这些都属于本发明的保护范围。
实施例1
本实施例提供一种基于碳纳米管/石墨烯肖特基结的高性能光电导式探测器，其结构示意图如图1所示。该光电导器件包括绝缘性基底1、碳纳米管网络2、岛状石墨烯3、图形化的电极4，其构筑方法如下：
(1)以Si/SiO2(300nm)衬底作为绝缘性基底，在Si/SiO2(300nm)衬底上采用湿法转移法转移岛状CVD石墨烯；
(2)采用传统微加工工艺沉积图形化的Au电极对，利用氧等离子体刻蚀去除沟道外的岛状石墨烯；
(3)采用滴涂的方法将半导体性SWCNTs网络(10nm)沉积在Au电极对之间。即得到高性能光电导探测器，其在1064nm激光辐照(30mW/cm2)条件下的光电性能如图2，3所示。器件在1V偏压下的暗电流为150nA，光电流则为740nA，但随着偏压增大，光电响应大幅度增强，10V偏压下的光电响应度高达850A/W。另外，器件具有较快的光电响应，其时间仅为44μs。
实施例2
本实施例提供一种基于碳纳米管/石墨烯肖特基结的高性能场效应晶体管式光电探测器，其结构示意图如图4所示。该光电导器件由栅极8、栅极介电层7、碳纳米管网络2、岛状石墨烯3、源极5、漏极6组成，其构筑方法如下：
(1)采用高掺杂Si作为栅极，在其表面热氧化生长SiO2(300nm)为栅极介电层。
(2)Si/SiO2衬底上采用湿法转移法转移岛状CVD石墨烯；
(3)采用传统微加工工艺沉积图形化的Au电极对为源漏电极，利用氧等离子体刻蚀去除沟道外的岛状石墨烯；
(4)采用转移方法将半导体性SWCNTs网络(15nm)沉积在源漏电极之间。即得到高性能场效应晶体管式光电探测器。
实施例3
本实施例提供一种基于碳纳米管/石墨烯肖特基结的高性能光电导式探测器，该光电导器件包括绝缘性基底、半导体性SWCNTs网络、图形化石墨烯、图形化电极组成。其构筑方法如下：
(1)采用湿法转移法转移CVD连续石墨烯至Si/SiO2(300nm)衬底上；
(2)采用传统光刻工艺和氧等离子体处理工艺获得图形化石墨烯。
(3)采用传统微加工工艺沉积图形化的Au电极对，利用氧等离子体刻蚀去除沟道外的图形化石墨烯；
(4)采用旋涂法将半导体性SWCNTs网络(1nm)沉积在图形化石墨烯表面并连接在Au电极上。即得到高性能光电导探测器。
实施例4
本实施例提供一种基于碳纳米管/石墨烯肖特基结的高性能场效应晶体管式光电探测器，该光电导器件包括栅极、栅极介电层、半导体性双壁碳纳米管网络、岛状石墨烯、源极、漏极组成。其构筑方法如下：
(1)采用高掺杂Si作为栅极，在其表面热氧化生长SiO2(300nm)为栅极介电层。
(2)采用旋涂法将半导体性双壁碳纳米管网络(5nm)沉积在Si/SiO2衬底上；
(3)采用湿法转移法转移岛状CVD石墨烯在半导体性双壁碳纳米管网络表面。
(4)用传统微加工工艺沉积图形化的Au电极对为源漏电极，并利用氧等离子体刻蚀去除沟道外的双壁碳纳米管和石墨烯。即得到高性能场效应晶体管式光电探测器。
实施例5
一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，包括：由PET基底构成的绝缘性基底，设置在绝缘性基底上表面两侧的Au电极对，位于电极对之间的碳纳米管网络，厚度为15nm，由半导体性双壁碳纳米管组成，通过、湿法转移获得，并且能够很好控制网络的厚度，位于碳纳米管网络内呈岛状的石墨烯，本实施例中采用的是石墨烯为化学气相沉积法制备的石墨烯，为图形化的阵列结构，位于碳纳米管网络的下方，并且石墨烯位于绝缘性基底上表面的沟道内，与两侧的电极对隔离开，不与电极对产生接触，这样既可以利用岛状石墨烯起到降低载流子复合几率作用，又可以降低由连续石墨烯作为导电沟道引起的较大暗电流，进而大幅度提高器件的光电性能。
实施例6
一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，包括：由玻璃基底构成的绝缘性基底，设置在绝缘性基底上表面两侧的Au电极对，位于电极对之间的碳纳米管网络，厚度为1nm，由半导体性单壁碳纳米管组成，通过旋涂法获得，并且能够很好控制网络的厚度，位于碳纳米管网络内呈岛状的石墨烯，本实施例中采用的是石墨烯为化学气相沉积法制备的石墨烯，为随机性碎片结构，位于碳纳米管网络的上方，并且石墨烯位于绝缘性基底上表面的沟道内，与两侧的电极对隔离开，不与电极对产生接触，这样既可以利用岛状石墨烯起到降低载流子复合几率作用，又可以降低由连续石墨烯作为导电沟道引起的较大暗电流，进而大幅度提高器件的光电性能。
以上对本发明的具体实施例进行了描述。需要理解的是，本发明并不局限于上述特定实施方式，本领域技术人员可以在权利要求的范围内做出各种变形或修改，这并不影响本发明的实质内容。

Claims (10)

1.一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，该光电器件包括：
绝缘性基底，
设置在绝缘性基底上表面两侧的电极对，
位于电极对之间的碳纳米管网络，
位于碳纳米管网络内呈岛状的石墨烯。
2.根据权利要求1所述的一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，所述石墨烯位于绝缘性基底上表面的沟道内，与两侧的电极对隔离开。
3.根据权利要求1或2所述的一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，所述石墨烯为化学气相沉积法制备的石墨烯。
4.根据权利要求1或2所述的一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，所述石墨烯为随机性碎片结构，位于碳纳米管网络上方或下方。
5.根据权利要求1或2所述的一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，所述石墨烯为图形化的阵列结构，位于碳纳米管网络上方或下方。
6.根据权利要求1所述的一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，所述碳纳米管网络由半导体性单壁碳纳米管和/或半导体性双壁碳纳米管组成。
7.根据权利要求1或6所述的一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，所述碳纳米管网络的厚度为1-15nm。
8.根据权利要求1或6所述的一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，所述碳纳米管网络通过旋涂法、湿法转移或滴涂法获得。
9.根据权利要求1所述的一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，所述绝缘性基底为Si/SiO2衬底、玻璃基底、PDMS基底或PET基底。
10.根据权利要求1所述的一种基于碳纳米管/石墨烯肖特基结的高性能光电器件，其特征在于，所述电极对为Au电极对。
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