CN108766970A - A kind of SONOS memories and preparation method thereof - Google Patents
A kind of SONOS memories and preparation method thereof Download PDFInfo
- Publication number
- CN108766970A CN108766970A CN201810604571.4A CN201810604571A CN108766970A CN 108766970 A CN108766970 A CN 108766970A CN 201810604571 A CN201810604571 A CN 201810604571A CN 108766970 A CN108766970 A CN 108766970A
- Authority
- CN
- China
- Prior art keywords
- layer film
- layer
- film
- silicon nitride
- charge storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
The present invention provides a kind of SONOS memories and preparation method thereof, provide semi-conductive substrate, sequentially form tunnel oxide layer film and silicon nitride layer film from the bottom to top on the semiconductor substrate；It is doped into germanium ion in the silicon nitride layer film by ion implantation technology, to form a germanium nitride thin layer in the silicon nitride film, forms the compound charge storage layer film of the silicon nitride and the germanium nitride；Top layer oxidation layer film and grid film are sequentially formed on the compound charge storage layer film；And the etching grid film, top layer oxidation layer film, the compound charge storage layer film and the tunnel oxide layer film, form SONOS memories.The present invention, as the charge storage layer in SONOS memories, is conducive to the ability for improving electric charge capture and storage, and then improve the data holding ability of SONOS memories using the charge storage layer of germanium nitride and silicon nitride.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing field, more particularly to a kind of SONOS memories and preparation method thereof.
Background technology
Conventional multi-crystalline silicon floating-gate memory stores data using floating boom (floating gate electrode), since the polysilicon of doping is to lead
Body so that the charge of floating boom storage is continuously distributed.In the dimensions scale downward of floating gate type memory, around floating boom absolutely
Edge layer is also sized to reduce therewith, and the diminution of insulating layer size can cause the electronics in multi-crystal silicon floating bar to be easy to be lost in.When
It leaks electricity certain of multi-crystal silicon floating bar, that is, there are one when leakage channel, the charge stored in entire multi-crystal silicon floating bar can all pass through
This leakage channel is lost in.That is, the scaled biggest obstacle of limitation floating gate type memory be its tunnel oxide layer thickness not
It can continue to reduce, in the case where tunnel oxide is relatively thin, the effects such as Leakage Current all can be right caused by direct tunnelling and stress
The electric leakage control of floating gate type memory proposes huge challenge.Therefore, select new optimization of material floating boom increasingly by industry
Attention.
In this case, the SONOS (Silicon-Oxide- of the nitridation silicon storage medium based on excellent insulation performance
Nitride-Oxide-Silicon) memory with its relative to the stronger charge storage of conventional multi-crystalline silicon floating-gate memory,
It is easily achieved miniaturization and the characteristics such as simple for process is paid attention to by everybody.SONOS memories are used with charge trap ability
Silicon nitride layer film replaces original floating boom to store charge layer, and since it is to store charge using trapped charge so that storage
Charge be discrete distribution.In this way, when if there is a leakage channel, the charge that would not have storage is logical by revealing
Road is largely lost.Therefore, reliability greatly improves.
However, the data holding ability of this SONOS memory constructions is still to be improved.
Invention content
One of the objects of the present invention is to provide a kind of preparation methods of SONOS memories, can be improved with forming one kind
The silicon nitride of data holding ability and the compound charge storage layer of germanium nitride.
Another object of the present invention is to provide a kind of SONOS memories, to improve the ability of electric charge capture and storage.
To achieve the goals above, the first aspect of the present invention provides a kind of preparation method of SONOS memories, including with
Lower step：Semi-conductive substrate is provided, sequentially forms tunnel oxide layer film and nitrogen from the bottom to top on the semiconductor substrate
SiClx layer film；It is doped into germanium ion in the silicon nitride layer film by ion implantation technology, with thin in the silicon nitride
A germanium nitride thin layer is formed in film, forms the compound charge storage layer film of the silicon nitride and the germanium nitride；Described multiple
It closes and sequentially forms top layer oxidation layer film and grid film on charge storage layer film；And it is the etching grid film, described
Top layer aoxidizes layer film, the compound charge storage layer film and the tunnel oxide layer film, forms SONOS memories.
Optionally, the thickness of the germanium nitride thin layer is less than
Optionally, the thickness of the compound charge storage layer film is
Optionally, in ion implantation technology, the energy for injecting the germanium ion is 500~20000eV, injects the germanium
The dosage of ion is 1E12~1E14/cm3。
Optionally, before being doped into germanium ion in the silicon nitride layer film by ion implantation technology, further include：
Initial top layer oxidation layer film is formed in the silicon nitride layer film；And the removal initial top layer oxide layer
Film exposes the silicon nitride layer film.
Optionally, the thickness of the tunnel oxide layer film isThe thickness of the silicon nitride layer film isThe thickness of top layer oxidation layer film is
Another aspect of the present invention provides a kind of SONOS memories, including：
Semiconductor substrate；And it is sequentially located at the tunnel oxide in the semiconductor substrate, silicon nitride and germanium nitride
The thickness of compound charge storage layer, top layer oxide layer and grid, the germanium nitride in the compound charge storage layer is less than
Optionally, the thickness of the compound charge storage layer isThe thickness of the top layer oxide layer isThe thickness of the tunnel oxide is
SONOS memories provided by the invention and preparation method thereof, by ion implantation technology to silicon nitride layer film into
Row germanium ion adulterates, and has germanium nitride and the compound charge storage layer film of silicon nitride to be formed, and then formed and stored as SONOS
The compound charge storage layer of germanium nitride and silicon nitride of the charge storage layer of device, the data for being conducive to improve SONOS memories are kept
Ability.
Description of the drawings
Fig. 1 is a kind of sectional view of typical SONOS memory constructions；
Fig. 2 is the flow diagram of the preparation method of the SONOS memories of the embodiment of the present invention；
Fig. 3 be the tunnel oxide of the formation on a semiconductor substrate layer film of the embodiment of the present invention, silicon nitride layer film and
Sectional view after initial top layer oxidation layer film；
Fig. 4 is the sectional view after the initial top layer oxidation layer film of removal of the embodiment of the present invention；
Sectional view when Fig. 5 is the germanium ion injection of the embodiment of the present invention；
Fig. 6 is the sectional view of the embodiment of the present invention formed after top layer oxide layer；
Fig. 7 a be the embodiment of the present invention silicon nitride as SONOS memories charge storage layer energy band schematic diagram；
Fig. 7 b be the embodiment of the present invention germanium nitride as SONOS memories charge storage layer energy band schematic diagram；
Fig. 8 is the sectional view of the SONOS memories of the embodiment of the present invention.
Reference sign：
10- silicon substrates；20- tunnel oxide silicon layers；30- silicon nitride layers；40- top layer silicon oxide layers；50- polysilicon gates；
100- semiconductor substrates；200- tunnel oxide layer films；
310- silicon nitride layer films；The compound charge storage layer thin layers of 320-；
The initial top layers of 410- aoxidize layer film；420- top layers aoxidize layer film；500- grid films；
Potential barrier of the conduction band of a- silicon nitrides to the conduction band of silica；Gesture of the valence band of b- silicon nitrides to the valence band of silica
It builds；Potential barrier of the conduction band of a '-germanium nitrides to the conduction band of silica；Potential barrier of the valence band of b '-germanium nitrides to the valence band of silica.
Specific implementation mode
Fig. 1 is a kind of sectional view of typical SONOS memory constructions.As shown in Figure 1, typical SONOS memory knots
Structure is by silicon substrate 10 (S)-tunnel oxide 20 (O)-charge storage layer silicon nitride 30 (N)-barrier oxide layer 40 (O)-polycrystalline
Si-gate 50 (S) forms.SONOS memory constructions storage principle be：The effect of electrons and holes in substrate in grid bias
Under, tunnel oxide realizes the write-in and erasing of data.
However, it is found by the inventors that the data holding of SONOS memories is carried out in the case where non-transformer is supplied, with
The growth of time, the loss for causing data is constantly overflowed in the electronics stored in silicon nitride layer film or hole.Therefore, it is necessary to one
The stronger charge storage layer of charge storage is planted to improve the ability of SONOS memory storage charges.
Based on above-mentioned discovery, a kind of SONOS memories of offer of the embodiment of the present invention and preparation method thereof pass through ion implanting
Technique carries out germanium ion doping to silicon nitride accumulation layer, using formed with germanium nitride and the compound charge storage layer of silicon nitride as
The charge storage layer of SONOS memories is conducive to the data holding ability for improving SONOS memories.
According to following explanation, advantages and features of the invention will become apparent from, can help those skilled in the art comprehensively, have
Effect ground understands the substantive content of the present invention, reaches the journey for repeating to realize the technical solution in the case where knowing the content of present invention
Degree.It should be noted that attached drawing is all made of very simplified form and uses non-accurate ratio, only to conveniently, lucidly
Aid in illustrating the purpose of the embodiment of the present invention.
Fig. 2 is the flow diagram of the preparation method of SONOS memories in the present embodiment.As shown in Fig. 2, and combining Fig. 3-
8, present embodiment discloses a kind of preparation methods of SONOS memories, the described method comprises the following steps：
Step S1：Semi-conductive substrate is provided, sequentially forms tunnel oxide from the bottom to top on the semiconductor substrate
Film and silicon nitride layer film.
Step S2：It is doped into germanium ion in the silicon nitride layer film by ion implantation technology, in the nitridation
A germanium nitride thin layer is formed in silicon thin film, forms the compound charge storage layer film of the silicon nitride and the germanium nitride.
Step S3：Top layer oxidation layer film and grid film are sequentially formed on the compound charge storage layer film.
Step S4：Etch the grid film, the top layer oxidation layer film, the compound charge storage layer film and
The tunnel oxide layer film forms SONOS memories.
A kind of SONOS memories and preparation method thereof of the present invention are made into one below in conjunction with attached drawing 3-8 and specific implementation
Step is described in detail.
Fig. 3 is the section formed on a semiconductor substrate in the present embodiment after tunnel oxide layer film and silicon nitride layer film
Figure.Fig. 4 is the sectional view after the initial top layer oxidation layer film of removal of the embodiment of the present invention.As shown in Figure 3 and Figure 4, it holds first
Row step S1, provides semi-conductive substrate 100, and tunnel oxide is sequentially formed from the bottom to top in the semiconductor substrate 100
Film 200 and silicon nitride layer film 300.
Wherein, the thickness of the tunnel oxide layer film 200 isThe thickness of the silicon nitride layer film 310
Ranging fromThe thickness of the initial top layer oxidation layer film 410 isThe semiconductor substrate 100
Silicon substrate in this way.
In this step, the wet-etching technology removal initial top layer is e.g. used to aoxidize layer film 410, and wet method
Etching is main to perform etching technique using HF (hydrogen fluoride).It is right in this step using wet etching compared to dry etching
The surface uniformity of silicon nitride layer film 31 influences smaller and smaller to the damage of semiconductor substrate.
Fig. 5 is sectional view when germanium ion injects in the present embodiment.As shown in figure 5, then executing step S2, pass through ion
Injection technology is doped into germanium ion in the silicon nitride layer film 310, to form a germanium nitride in the silicon nitride film
Thin layer forms the compound charge storage layer film 320 of the silicon nitride and the germanium nitride.Silicon nitride is used in the present embodiment
With the compound charge storage layer of germanium nitride as improved storage nitration case, which raises charge storage layer capture charge and storages
The ability of charge, escape with effectively reducing electronics or the hole of the storage of charge storage layer as time increases and caused by number
According to loss.
Wherein, the thickness of the germanium nitride thin layer is less thanThe thickness of the compound charge storage layer film 320 isIn ion implantation technology, the energy for injecting the germanium ion is 500~20000eV (electron-volt), injection
The dosage of the germanium ion is 1E12~1E14/cm3。
Fig. 7 a are energy band schematic diagram of the silicon nitride as the charge storage layer of SONOS memories.Fig. 7 b are germanium nitride conducts
The energy band schematic diagram of the charge storage layer of SONOS memories.As illustrated in figs. 7 a and 7b, silicon nitride (Si3N4) it is used as charge storage layer
When, the potential barrier a (electron transition potential barrier) of the conduction band of the conduction band of silicon nitride to silica is 1.05eV, and the valence band of silicon nitride is to aoxidizing
The potential barrier b (hole transition potential barrier) of the valence band of silicon is 2.85eV；Germanium nitride (Ge in SONOS memories3N4) it is used as charge storage layer
When, the potential barrier a ' of the conduction band of the conduction band of germanium nitride to silica is 1.5eV, the potential barrier of the valence band of the valence band of germanium nitride to silica
B ' is 3.2eV.When germanium nitride is as charge storage layer it can be seen from band structure, conduction band the leading to silica of germanium nitride
The potential barrier of band is big, and the potential barrier of the valence band of the valence band of same germanium nitride to silica is big.From the foregoing, it will be observed that germanium nitride is more suitable than silica
Cooperation is electric charge capture layer.
Therefore, compared in the prior art using silicon nitride layer film as charge storage layer, using silicon nitride and nitridation
For the composite layer of germanium as charge storage layer, capture charge and the ability for storing charge are stronger.
In other embodiments, it since board limits, is adulterated in the silicon nitride layer film by ion implantation technology
Before entering germanium ion, further include：Step S21：Initial top layer oxidation layer film 410 is formed in the silicon nitride layer film 310；
And step S22：The initial top layer oxidation layer film 410 is removed, the silicon nitride layer film 310 is exposed.
Fig. 6 is that the sectional view after top layer oxide layer is formed in the present embodiment.As shown in fig. 6, step S3 is then executed, in institute
It states and sequentially forms top layer oxidation layer film 420 and grid film 500 on compound charge storage layer film 320.
Wherein, the thickness of the top layer oxidation layer film 500 is
Fig. 8 is the sectional view of SONOS memories.As shown in figure 8, then executing step S4, the grid film is etched
500, the top layer oxidation layer film 420, the compound charge storage layer film 320 and the tunnel oxide layer film 200,
Form SONOS memories.
The present embodiment additionally provides a kind of SONOS memories, including semiconductor substrate；And it is sequentially located at the semiconductor
The compound charge storage layer of tunnel oxide on substrate, silicon nitride and germanium nitride, top layer oxide layer and grid, it is described compound
The thickness of germanium nitride in charge storage layer is less thanThe thickness of the compound charge storage layer isIt is described
The thickness of top layer oxide layer isThe thickness of the tunnel oxide is
In conclusion carrying out germanium ion doping to silicon nitride layer film by ion implantation technology, there is nitridation to be formed
Germanium and the compound charge storage layer film of silicon nitride, and then form the germanium nitride and nitrogen of the charge storage layer as SONOS memories
The compound charge storage layer of SiClx is conducive to the data holding ability for improving SONOS memories.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (12)
1. a kind of preparation method of SONOS memories, which is characterized in that include the following steps：
Semi-conductive substrate is provided, sequentially forms tunnel oxide layer film and silicon nitride from the bottom to top on the semiconductor substrate
Layer film；
It is doped into germanium ion in the silicon nitride layer film by ion implantation technology, to be formed in the silicon nitride film
One germanium nitride thin layer forms the compound charge storage layer film of the silicon nitride and the germanium nitride；
Top layer oxidation layer film and grid film are sequentially formed on the compound charge storage layer film；And
Etch the grid film, top layer oxidation layer film, the compound charge storage layer film and the tunnelling oxygen
Change layer film, forms SONOS memories.
2. the method as described in claim 1, which is characterized in that the thickness of the germanium nitride thin layer is less than
3. the method as described in claim 1, which is characterized in that the thickness of the compound charge storage layer film is
4. the method as described in claim 1, which is characterized in that in ion implantation technology, inject the energy of the germanium ion
For 500~20000eV.
5. the method as described in claim 1, which is characterized in that in ion implantation technology, inject the dosage of the germanium ion
For 1E12~1E14/cm3。
6. the method as described in claim 1, which is characterized in that mixed in the silicon nitride layer film by ion implantation technology
It is miscellaneous enter germanium ion before, further include：
Initial top layer oxidation layer film is formed in the silicon nitride layer film；And
The initial top layer oxidation layer film is removed, the silicon nitride layer film is exposed.
7. the method as described in claim 1, which is characterized in that the thickness of the tunnel oxide layer film is
8. the method as described in claim 1, which is characterized in that the thickness of the silicon nitride layer film is
9. the method as described in claim 1, which is characterized in that the thickness of top layer oxidation layer film is
10. a kind of SONOS memories, which is characterized in that including：
Semiconductor substrate；And
The compound charge storage layer of the tunnel oxide being sequentially located in the semiconductor substrate, silicon nitride and germanium nitride, top layer
The thickness of oxide layer and grid, the germanium nitride in the compound charge storage layer is less than
11. SONOS memories as claimed in claim 10, which is characterized in that the thickness of the compound charge storage layer is
12. nonvolatile memory as claimed in claim 10, which is characterized in that the thickness of the top layer oxide layer isThe thickness of the tunnel oxide is
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810604571.4A CN108766970A (en) | 2018-06-13 | 2018-06-13 | A kind of SONOS memories and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810604571.4A CN108766970A (en) | 2018-06-13 | 2018-06-13 | A kind of SONOS memories and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108766970A true CN108766970A (en) | 2018-11-06 |
Family
ID=64022002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810604571.4A Pending CN108766970A (en) | 2018-06-13 | 2018-06-13 | A kind of SONOS memories and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108766970A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038918A (en) * | 2021-11-08 | 2022-02-11 | 珠海创飞芯科技有限公司 | Memory cell, manufacturing method of memory cell and memory |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331463B1 (en) * | 1998-09-19 | 2001-12-18 | United Microelectronics Corp. | Method for manufacturing low power high efficiency non-volatile erasable programmable memory cell structure |
| CN101043038A (en) * | 2006-03-21 | 2007-09-26 | 株式会社半导体能源研究所 | Nonvolatile semiconductor memory device |
| CN101047192A (en) * | 2006-03-31 | 2007-10-03 | 株式会社半导体能源研究所 | Nonvolatile semiconductor memory device |
| CN101068019A (en) * | 2006-03-21 | 2007-11-07 | 株式会社半导体能源研究所 | Nonvolatile semiconductor memory device |
| CN101083286A (en) * | 2006-06-01 | 2007-12-05 | 株式会社半导体能源研究所 | Nonvolatile semiconductor memory device |
| CN101132007A (en) * | 2006-08-23 | 2008-02-27 | 东部高科股份有限公司 | Flash memory device and manufacturing method thereof |
| CN104766825A (en) * | 2014-01-08 | 2015-07-08 | 中芯国际集成电路制造(上海)有限公司 | Flash device and method for improving gate capacitance of flash device |
| US20180175209A1 (en) * | 2016-12-20 | 2018-06-21 | Globalfoundries Inc. | Semiconductor structure including one or more nonvolatile memory cells and method for the formation thereof |
-
2018
- 2018-06-13 CN CN201810604571.4A patent/CN108766970A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331463B1 (en) * | 1998-09-19 | 2001-12-18 | United Microelectronics Corp. | Method for manufacturing low power high efficiency non-volatile erasable programmable memory cell structure |
| CN101043038A (en) * | 2006-03-21 | 2007-09-26 | 株式会社半导体能源研究所 | Nonvolatile semiconductor memory device |
| CN101068019A (en) * | 2006-03-21 | 2007-11-07 | 株式会社半导体能源研究所 | Nonvolatile semiconductor memory device |
| CN101047192A (en) * | 2006-03-31 | 2007-10-03 | 株式会社半导体能源研究所 | Nonvolatile semiconductor memory device |
| CN101083286A (en) * | 2006-06-01 | 2007-12-05 | 株式会社半导体能源研究所 | Nonvolatile semiconductor memory device |
| CN101132007A (en) * | 2006-08-23 | 2008-02-27 | 东部高科股份有限公司 | Flash memory device and manufacturing method thereof |
| CN104766825A (en) * | 2014-01-08 | 2015-07-08 | 中芯国际集成电路制造(上海)有限公司 | Flash device and method for improving gate capacitance of flash device |
| US20180175209A1 (en) * | 2016-12-20 | 2018-06-21 | Globalfoundries Inc. | Semiconductor structure including one or more nonvolatile memory cells and method for the formation thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038918A (en) * | 2021-11-08 | 2022-02-11 | 珠海创飞芯科技有限公司 | Memory cell, manufacturing method of memory cell and memory |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3159850B2 (en) | Nonvolatile semiconductor memory device and method of manufacturing the same | |
| CN103887313B (en) | A kind of half floating-gate device and preparation method thereof | |
| CN100477266C (en) | Non-volatile memory devices including barrier layers and methods of manufacturing the same | |
| JP2012216876A5 (en) | ||
| US8592892B2 (en) | Nonvolatile semiconductor memory device and method for manufacturing the same | |
| CN104882447A (en) | Semi-floating gate transistor of drain region embedding inversion layer and manufacturing method thereof | |
| CN103531592B (en) | Three gate control type nodeless mesh body pipes of high mobility low source and drain resistance | |
| CN106024889A (en) | Semiconductor device and manufacturing method thereof | |
| CN102810541B (en) | A kind of memory and manufacture method thereof | |
| CN108766970A (en) | A kind of SONOS memories and preparation method thereof | |
| US10164073B2 (en) | Apparatus and method for memory device | |
| US20070007583A1 (en) | Gate structure and related non-volatile memory device and method | |
| US6162684A (en) | Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices | |
| US8476154B2 (en) | Method of making a charge trapping non-volatile semiconductor memory device | |
| US7622373B2 (en) | Memory device having implanted oxide to block electron drift, and method of manufacturing the same | |
| CN105826272B (en) | Semiconductor devices and forming method thereof | |
| JP4895823B2 (en) | Semiconductor device | |
| CN104701263B (en) | A kind of manufacture method of half floating-gate device | |
| CN110473877B (en) | Preparation method of three-dimensional memory, three-dimensional memory and electronic equipment | |
| CN105097919B (en) | Half floating gate transistor structures and preparation method thereof | |
| Kim et al. | Arch NAND flash memory array with improved virtual source/drain performance | |
| CN106169479A (en) | SONOS memorizer and process | |
| CN105990092B (en) | The forming method of semiconductor structure | |
| CN103094355A (en) | Nanocrystalline storage device and manufacture method thereof | |
| US20080064165A1 (en) | Dual storage node memory devices and methods for fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181106 |
|
| RJ01 | Rejection of invention patent application after publication |