CN108754457A - The making-up air device of tubular reactor - Google Patents
The making-up air device of tubular reactor Download PDFInfo
- Publication number
- CN108754457A CN108754457A CN201810948880.3A CN201810948880A CN108754457A CN 108754457 A CN108754457 A CN 108754457A CN 201810948880 A CN201810948880 A CN 201810948880A CN 108754457 A CN108754457 A CN 108754457A
- Authority
- CN
- China
- Prior art keywords
- pipe
- blowdown
- blowdown pipe
- lpcvd
- venthole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 20
- 230000004323 axial length Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000007921 spray Substances 0.000 abstract description 2
- 239000013589 supplement Substances 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003519 ventilatory effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Rigid Pipes And Flexible Pipes (AREA)
Abstract
The present invention gives a kind of making-up air devices of tubular reactor;Including an at least blowdown pipe, the blowdown pipe rear end is passed through the process gas needed for plated film, and blowdown pipe front end is stretched into through stove tail-hood plate in LPCVD pipe furnaces, and blowdown pipe front end face is provided with the venthole being discharged for process gas.By blowdown pipe process gas is conveyed into LPCVD pipe furnaces, supplement the amount for the process gas that main air inlet pipe sprays, improve in certain region film thickness uniformity between the piece of LPCVD plated films, it can increase boiler tube length using the making-up air device of this tubular reactor, to increase constant temperature section length, achieve the purpose that increase production capacity.
Description
Technical field
A kind of coating technique in being manufactured the present invention relates to solar cell especially relates to improve hot wall LPCVD pipes
The making-up air device of the uniformity between the piece of stove.
Background technology
In solar battery sheet production process, need, in surface coating, such as polysilicon, silicon nitride etc., to need to use
LPCVD techniques carry out plated film.To improve production capacity, the useful load of single tube LPCVD pipe furnaces (tubular reactor) is improved by hundreds of
To 1200, the length of boiler tube, the length of technique flat-temperature zone and process gas Spreading requirements are caused to greatly promote, especially work
In skill flat-temperature zone, back zone between piece uniformity technology require greatly promote.
Only the uniform circular on the fire door cover board of stove tail is distributed with multiple main air inlet pipes to existing boiler tube, main air inlet pipe to
Process gas needed for LPCVD pipe furnace injection plated films, but after boiler tube lengthens, only raising production has been cannot be satisfied by main air inlet pipe
The coating film thickness uniformity requirement of back zone in LPCVD after energy, the uniformity is poor between leading to piece.
Invention content
Technical problem to be solved by the invention is to provide a kind of benefits simple in structure, the good tubular reactor of tonifying Qi effect
Device of air.
In order to solve the above technical problems, the present invention provides a kind of making-up air devices of tubular reactor;
Including an at least blowdown pipe, the blowdown pipe rear end is passed through the process gas needed for plated film, and blowdown pipe front end is passed through
It wears stove tail-hood plate to stretch into LPCVD pipe furnaces, blowdown pipe front end face is provided with the venthole being discharged for process gas.
After such structure, process gas is conveyed into LPCVD pipe furnaces by blowdown pipe, supplement main air inlet pipe sprays
Process gas amount, improve in certain region film thickness uniformity between the piece of LPCVD plated films, use the benefit of this tubular reactor
Device of air can increase boiler tube length, to increase constant temperature section length, achieve the purpose that increase production capacity.
For the clearer technology contents for understanding the present invention, the making-up air device of this tubular reactor is referred to as this below
Making-up air device.
This making-up air device includes several blowdown pipes, and it is all different that all blowdown pipes stretch into distance in LPCVD pipe furnaces;Using in this way
Structure after, several blowdown pipes can be directed to multiple regions and convey process gas, improve in certain region film between the piece of LPCVD plated films
Layer thickness homogeneity.
This making-up air device includes four blowdown pipes, is the first blowdown pipe, the second blowdown pipe, third blowdown pipe and the 4th respectively
Blowdown pipe, the first blowdown pipe front end are the first venthole, and length of first venthole apart from stove tail-hood plate is equal in LPCVD pipe furnaces
The 60% of hole axle line length;Second blowdown pipe front end is the second venthole, and length of second venthole apart from stove tail-hood plate is equal to
The 50% of LPCVD pipe furnace endoporus axial lengths;Third blowdown pipe front end is third venthole, and third venthole is apart from stove tail-hood plate
Length be equal to LPCVD pipe furnace endoporus axial lengths 40%;4th blowdown pipe front end be the 4th venthole, the 4th venthole away from
Length from stove tail-hood plate is equal to the 30% of LPCVD pipe furnace endoporus axial lengths.
By the experiment in practice, the quantity and position condition of obtained optimal blowdown pipe advanced optimize
The coating effects of LPCVD pipe furnaces.
Four blowdown pipe rear ends of this making-up air device are connected to supervisor respectively, are responsible for end and are passed through the technique needed for plated film
Gas, by being responsible for Xiang Si root blowdown pipes gas supply;After such structure, supervisor facilitates connection air source and four blowdown pipes.
Four blowdown pipe rear portions of this making-up air device are respectively equipped with flow control valve;After such structure, flow control
Valve processed may be implemented each road blowdown pipe and both can be used alone and can also be used together, and can flexibly control every road blowdown pipe
Ventilatory capacity.
Description of the drawings
Fig. 1 is the structure rearview of this making-up air device embodiment.
Fig. 2 is Fig. 1 along sectional view along A-A.
Specific implementation mode
As illustrated in fig. 1 and 2
This making-up air device includes four blowdown pipes, supervisor 3 and four flow control valves 2.
Four blowdown pipes are the first blowdown pipe 11, the second blowdown pipe 12, third blowdown pipe 13 and the 4th blowdown pipe 14 respectively,
Four blowdown pipe structures are identical, and by taking the first blowdown pipe 11 as an example, LPCVD pipe furnaces 4 are stretched into blowdown pipe front end through stove tail-hood plate 43
Interior, 4 rear side of LPCVD pipe furnaces is stretched out in blowdown pipe rear end.
It is all different that four blowdown pipes stretch into distance in LPCVD pipe furnaces 4, and 11 front end of the first blowdown pipe is the first venthole 11a,
Length of the first venthole 11a apart from stove tail-hood plate 43 is equal to the 60% of 4 endoporus axial length of LPCVD pipe furnaces;Second blowdown pipe
12 front ends are that the second length of venthole 12a, the second venthole 12a apart from stove tail-hood plate 43 is equal to axially bored line in LPCVD pipe furnaces 4
The 50% of length;13 front end of third blowdown pipe is the length of third venthole 13a, third venthole 13a apart from stove tail-hood plate 43
Equal to the 40% of 4 endoporus axial length of LPCVD pipe furnaces;4th blowdown pipe, 14 front end is the 4th venthole 14a, the 4th venthole
Length of the 14a apart from stove tail-hood plate 43 is equal to the 30% of 4 endoporus axial length of LPCVD pipe furnaces, nicely rounded on fire door cover board 41
12 main air inlet pipes 42 are distributed with week.
Four flow control valves 2 and four blowdown pipes are one-to-one relationship, and four flow control valves 2 are separately positioned on four
Root blowdown pipe rear portion, flow control valve 2 (can select needle-valve, MFC etc.) are in 4 outside of LPCVD pipe furnaces.
Four blowdown pipe rear ends are connected to supervisor 3 respectively, are responsible for 3 ends and are passed through the process gas needed for plated film, pass through
Supervisor 3 supplies to four blowdown pipes.
This making-up air device supplies the process gas needed for plated film by supervisor 3 to four blowdown pipes, and tail portion tonifying Qi is passed through
Main tracheae introducing is divided into parallel 4 tunnel together, passes through gas flow, No. 4 blowdown pipes by the control of flow control valve 2 per road blowdown pipe
Parallel tonifying Qi either respectively independently can be used or be used cooperatively with Close All, and the parallel tonifying Qi in 4 tunnels each by gas
Body flow can control.
Above-described is only one embodiment of the present invention, it is noted that for those of ordinary skill in the art
For, without departing from the principle of the present invention, several variations and modifications can also be made, these also should be regarded as belonging to this hair
Bright protection domain.
Claims (5)
1. a kind of making-up air device of tubular reactor, it is characterized in that:
Including an at least blowdown pipe, the blowdown pipe rear end is passed through the process gas needed for plated film, and stove is run through in blowdown pipe front end
Tail-hood plate stretches into LPCVD pipe furnaces, and blowdown pipe front end face is provided with the venthole being discharged for process gas.
2. the making-up air device of tubular reactor according to claim 1, it is characterized in that:
Including several blowdown pipes, it is all different that all blowdown pipes stretch into distance in LPCVD pipe furnaces.
3. the making-up air device of tubular reactor according to claim 2, it is characterized in that:
It is the first blowdown pipe, the second blowdown pipe, third blowdown pipe and the 4th blowdown pipe respectively including four blowdown pipes, first mends
Tracheae front end is the first venthole, and length of first venthole apart from stove tail-hood plate is equal to LPCVD pipe furnace endoporus axial lengths
60%;Second blowdown pipe front end is the second venthole, and length of second venthole apart from stove tail-hood plate is equal to LPCVD pipe furnace endoporus
The 50% of axial length;Third blowdown pipe front end is third venthole, and length of the third venthole apart from stove tail-hood plate is equal to
The 40% of LPCVD pipe furnace endoporus axial lengths;4th blowdown pipe front end is the 4th venthole, and the 4th venthole is apart from stove tail-hood plate
Length be equal to LPCVD pipe furnace endoporus axial lengths 30%.
4. the making-up air device of tubular reactor according to claim 3, it is characterized in that:
Four blowdown pipe rear ends be connected tos with supervisor respectively, and supervisor and is passed through the process gas needed for plated film at end, by be responsible for
Four blowdown pipe gas supply.
5. the making-up air device of tubular reactor according to claim 3, it is characterized in that:
Four blowdown pipe rear portions are respectively equipped with flow control valve.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810948880.3A CN108754457A (en) | 2018-08-20 | 2018-08-20 | The making-up air device of tubular reactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810948880.3A CN108754457A (en) | 2018-08-20 | 2018-08-20 | The making-up air device of tubular reactor |
Publications (1)
Publication Number | Publication Date |
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CN108754457A true CN108754457A (en) | 2018-11-06 |
Family
ID=63967233
Family Applications (1)
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CN201810948880.3A Pending CN108754457A (en) | 2018-08-20 | 2018-08-20 | The making-up air device of tubular reactor |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110004433A (en) * | 2019-05-10 | 2019-07-12 | 普乐新能源(蚌埠)有限公司 | The making-up air device of low-pressure chemical vapor deposition vacuum tube furnace |
CN115074702A (en) * | 2022-06-02 | 2022-09-20 | 上海微世半导体有限公司 | Method for introducing chemical gas into LPCVD furnace |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070231246A1 (en) * | 2005-12-16 | 2007-10-04 | Semes Co., Ltd. | Apparatus and method for compounding carbon nanotubes |
CN103866294A (en) * | 2014-04-03 | 2014-06-18 | 江西沃格光电股份有限公司 | Film coating gas charging device |
CN208803143U (en) * | 2018-08-20 | 2019-04-30 | 普乐新能源(蚌埠)有限公司 | The making-up air device of tubular reactor |
-
2018
- 2018-08-20 CN CN201810948880.3A patent/CN108754457A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070231246A1 (en) * | 2005-12-16 | 2007-10-04 | Semes Co., Ltd. | Apparatus and method for compounding carbon nanotubes |
CN103866294A (en) * | 2014-04-03 | 2014-06-18 | 江西沃格光电股份有限公司 | Film coating gas charging device |
CN208803143U (en) * | 2018-08-20 | 2019-04-30 | 普乐新能源(蚌埠)有限公司 | The making-up air device of tubular reactor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110004433A (en) * | 2019-05-10 | 2019-07-12 | 普乐新能源(蚌埠)有限公司 | The making-up air device of low-pressure chemical vapor deposition vacuum tube furnace |
CN110004433B (en) * | 2019-05-10 | 2024-03-22 | 普乐新能源(蚌埠)有限公司 | Air supplementing device of low-pressure chemical vapor deposition vacuum tube furnace |
CN115074702A (en) * | 2022-06-02 | 2022-09-20 | 上海微世半导体有限公司 | Method for introducing chemical gas into LPCVD furnace |
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