CN108735834B - 一种光电二极管、x射线探测基板及其制作方法 - Google Patents

一种光电二极管、x射线探测基板及其制作方法 Download PDF

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CN108735834B
CN108735834B CN201710253989.0A CN201710253989A CN108735834B CN 108735834 B CN108735834 B CN 108735834B CN 201710253989 A CN201710253989 A CN 201710253989A CN 108735834 B CN108735834 B CN 108735834B
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silicon layer
type silicon
photodiode
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CN108735834A (zh
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黄睿
孙建明
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种光电二极管、X射线探测基板及其制作方法，该光电二极管包括：具有多个陷光结构的N型硅层，设置于N型硅层上的I型硅层，以及设置于I型硅层上的P型硅层；其中，在各陷光结构处的N型硅层、I型硅层和P型硅层构成径向结结构的PIN。由于N型硅层、I型硅层和P型硅层在各陷光结构处构成的径向结结构的PIN同时具有陷光功能，因此，该径向结结构的PIN不仅可以使光电二极管内部的光吸收方向与载流子传输方向相互垂直，从而提高了光电二极管的光电转换效率；同时可以使光在P型硅层表面发生多次反射，从而提高了光电二极管对光的吸收效率。

Description

一种光电二极管、X射线探测基板及其制作方法
技术领域
本发明涉及半导体制造技术领域，尤其涉及一种光电二极管、X射线探测器基板及其制作方法。
背景技术
X射线检测技术广泛应用于工业无损检测、集装箱扫描、电路板检查、医疗、安全等领域，具有广阔的应用前景。传统的X-Ray成像技术属于模拟信号成像，分辨率不高，图像质量较差。20世纪90年代末出现的X射线数字化成像技术(Digital Radio Graphy，DR)采用X射线探测基板直接将X影像转换为数字图像，因其转换的数字图像清晰，分辨率高，且易于保存和传送，已成为目前研究的热点。根据结构的不同，X射线探测基板分为直接转换型(Direct DR)与间接转换型(Indirect DR)。其中，由于间接转换型X射线探测基板技术较为成熟，成本相对低，探测量子效率(Detective Quantum Efficiency，DQE)高，信赖性好等优势得到了广泛的开发与应用。
间接转换型X射线探测基板主要包括薄膜晶体管(Thin Film Transistor，TFT)与光电二极管。在X射线照射下，闪烁体层或荧光体层将X射线光子转换为可见光，然后在光电二极管的作用下将可见光转换为电信号，最终通过薄膜晶体管读取电信号并将电信号输出得到显示图像。可见，光电二极管是间接转换型X射线探测基板的关键组成部分，其光电转换效率对于X射线剂量、X射线成像的分辨率、图像的响应速度等关键指标有很大影响。现有技术中，为保障光的有效吸收，要求光电二极管的硅层较厚。然而，由于光吸收方向与载流子传输方向平行，较厚的硅层导致载流子传输距离较远，使得光电二极管的光电转换效率比较低。
因此，如何提高光电二极管的光电转换效率，是目前亟需解决的技术问题。
发明内容
本发明实施例提供一种光电二极管、X射线探测基板及其制作方法，用以解决现有技术中存在的如何提高光电二极管的光电转换效率的问题。
本发明实施例提供的一种光电二极管，包括：具有多个陷光结构的N型硅层，设置于所述N型硅层上的I型硅层，以及设置于所述I型硅层上的P型硅层；其中，
在各所述陷光结构处的所述N型硅层、所述I型硅层和所述P型硅层构成径向结结构的PIN。
在一种可能的实现方式中，在本发明实施例提供的上述光电二极管中，各所述径向结结构呈周期性排布。
在一种可能的实现方式中，在本发明实施例提供的上述光电二极管中，各所述陷光结构为圆柱状陷光结构；所述径向结结构为环状径向结结构。
在一种可能的实现方式中，在本发明实施例提供的上述光电二极管中，各所述陷光结构为凹陷结构；所述径向结结构为圆环状孔洞结构。
在一种可能的实现方式中，在本发明实施例提供的上述光电二极管中，所述N型硅层中的各所述凹陷结构的深度为
Figure BDA0001272864870000021
所述N型硅层中除各所述凹陷结构以外区域的厚度为
Figure BDA0001272864870000022
各所述凹陷结构的直径为
Figure BDA0001272864870000023
每相邻两个所述凹陷结构之间的距离为
Figure BDA0001272864870000024
在一种可能的实现方式中，在本发明实施例提供的上述光电二极管中，所述陷光结构为凸起结构；所述径向结结构为圆柱状凸起结构。
在一种可能的实现方式中，在本发明实施例提供的上述光电二极管中，所述N型硅层中的各所述凸起结构的高度为
Figure BDA0001272864870000025
所述N型硅层中除各所述凸起结构以外区域的厚度为
Figure BDA0001272864870000026
各所述凸起结构的直径为
Figure BDA0001272864870000031
每相邻两个所述凸起结构之间的距离为
Figure BDA0001272864870000032
在一种可能的实现方式中，在本发明实施例提供的上述光电二极管中，所述I型硅层的厚度为
Figure BDA0001272864870000033
在一种可能的实现方式中，在本发明实施例提供的上述光电二极管中，所述P型硅层的厚度为
Figure BDA0001272864870000034
本发明实施例提供了一种X射线探测基板，包括：衬底基板，设置于所述衬底基板上的多个上述光电二极管，设置于所述衬底基板与所述光电二极管之间的多个薄膜晶体管，以及设置于所述光电二极管上的多个电流导出部件；
其中，各所述薄膜晶体管与各所述光电二极管一一对应，且所述光电二极管的N型硅层与对应的所述薄膜晶体管的漏电极连接；
各所述电流导出部件与各所述光电二极管一一对应，且所述光电二极管的P型硅层与对应的所述电流导出部件电连接。
在一种可能的实现方式中，在本发明实施例提供的上述X射线探测基板中，所述电流导出部件，具体包括：
设置于所述光电二极管上的第一透明电极层，依次设置于所述薄膜晶体管和所述第一透明电极层上的钝化层和平坦层，设置于所述平坦层上且通过贯穿所述钝化层和平坦层的接触孔与所述第一透明电极层电连接的第二透明电极层、设置于所述第二透明电极层上的导电金属层，设置于所述导电金属层上的保护层。
在一种可能的实现方式中，在本发明实施例提供的上述X射线探测基板中，所述N型硅层具有的各所述陷光结构为凹陷结构时，贯穿所述钝化层和平坦层的接触孔位于相邻的所述径向结结构之间。
在一种可能的实现方式中，在本发明实施例提供的上述X射线探测基板中，所述N型硅层具有的各所述陷光结构为凸起结构时，贯穿所述钝化层和平坦层的接触孔位于所述径向结结构之上。
本发明实施例提供了一种上述光电二极管的制作方法，包括：
在N型硅层的表面制作多个陷光结构；
在具有所述陷光结构的所述N型硅层上依次形成I型硅层和P型硅层；其中，
在各所述陷光结构处的所述N型硅层、所述I型硅层和所述P型硅层构成径向结结构的PIN。
本发明实施例提供了一种上述X射线探测基板的制作方法，包括：
在衬底基板上形成薄膜晶体管；
在形成有所述薄膜晶体管的所述衬底基板上采用上述制作方法形成与所述薄膜晶体管一一对应的光电二极管；
在所述光电二极管上形成与所述光电二极管一一对应的多个电流导出部件。
本发明有益效果如下：
本发明实施例提供的一种光电二极管、X射线探测基板及其制作方法，该光电二极管包括：具有多个陷光结构的N型硅层，设置于N型硅层上的I型硅层，以及设置于I型硅层上的P型硅层；其中，在各陷光结构处的N型硅层、I型硅层和P型硅层构成径向结结构的PIN。由于N型硅层、I型硅层和P型硅层在各陷光结构处构成的径向结结构的PIN同时具有陷光功能，因此，该径向结结构的PIN不仅可以使光电二极管内部的光吸收方向与载流子传输方向相互垂直，从而提高了光电二极管的光电转换效率；同时可以使光在P型硅层表面发生多次反射，从而提高了光电二极管对光的吸收效率。
附图说明
图1和图2分别为本发明实施例一提供的光电二极管的结构示意图；
图3和图4分别为本发明实施例二提供的光电二极管的结构示意图；
图5为本发明实施例提供的光电二极管的制作方法流程图；
图6为本发明实施例三提供的X射线探测基板的结构示意图；
图7为本发明实施例四提供的X射线探测基板的结构示意图；
图8为本发明实施例提供的X射线探测基板的制作方法流程图。
具体实施方式
下面结合附图，对本发明实施例提供的一种光电二极管、X射线探测基板及其制作方法的具体实施方式进行详细地说明。
附图中各膜层的形状和大小不反映光电二极管或X射线探测基板的真实比例，目的只是示意说明本发明内容。
本发明实施例提供的一种光电二极管，如图1至图4所示，包括：具有多个陷光结构101的N型硅层102，设置于N型硅层102上的I型硅层103，以及设置于I型硅层103上的P型硅层104；其中，
在各陷光结构101处的N型硅层102、I型硅层103和P型硅层104构成径向结结构105的PIN。
具体地，在本发明实施例提供的上述光电二极管中，由于N型硅层102、I型硅层103和P型硅层104在各陷光结构101处构成的径向结结构105的PIN同时具有陷光功能，因此，该径向结结构的PIN不仅可以使光电二极管内部的光吸收方向与载流子传输方向相互垂直，从而提高了光电二极管的光电转换效率；同时可以使光在P型硅层表面发生多次反射，从而提高了光电二极管对光的吸收效率。
在具体实施时，在本发明实施例提供的上述光电二极管中，为了使照射到光电二极管的光被尽可能多地转换为电信号，如图1至图4所示，各径向结结构105可以呈周期性排布。当然，各径向结结构105还可以有其他排布方式，在此不做限定。
在具体实施时，在本发明实施例提供的上述光电二极管中，各陷光结构101和各径向结结构105的截面形状可以多种，例如，可以为方形，三角形，或其他多边形，在此不做限定。较佳地，为使光与光电二极管的各径向结结构105内壁的接触面积最大，从而最大程度地实现光电二极管对光的反射和吸收，各陷光结构101和各径向结结构105的截面形状可以为圆形，此时，如图2和图4所示，各陷光结构101为圆柱状陷光结构；径向结结构105为环状径向结结构。
下面通过两个具体实施例对本发明实施例提供的上述光电二极管的结构进行详细说明。
实施例一
具体地，在本发明实施例一提供的光电二极管中，如图1和图2所示，光电二极管的N型硅层102中的各陷光结构101为凹陷结构；径向结结构105为圆环状孔洞结构。即各陷光结构101为在N型硅层102上的孔洞结构，径向结结构105为由N型硅层102的孔洞结构和贴附该孔洞结构内壁的I型硅层103和P型硅层104构成的圆环状孔洞结构。
值得注意的是，在本发明实施例一提供的光电二极管的N型硅层102中，各陷光结构101不仅可以为上述圆环状孔洞结构，还可以为其他任意形状的凹陷结构，例如正多边形凹陷结构，在此不做限定。此外，径向结结构105不仅可以为圆环状孔洞结构，还可以为其他任意不规则环形孔洞结构，例如椭圆状的环形孔洞，在此不做限定。
并且，通过试验可知，本发明实施例一提供的上述光电二极管的光电转换效率与各硅层的厚度、凹陷结构的直径和深度有关。具体地，为使本发明实施例一提供的上述光电二极管获得较高的光电转换效率，如图1所示，N型硅层102中的各凹陷结构的深度h1为
Figure BDA0001272864870000061
N型硅层102中除各凹陷结构以外区域的厚度a1为
Figure BDA0001272864870000062
各凹陷结构的直径d1为
Figure BDA0001272864870000063
每相邻两个凹陷结构之间的距离b1为
Figure BDA0001272864870000064
I型硅层103的厚度c为
Figure BDA0001272864870000065
P型硅层104的厚度e为
Figure BDA0001272864870000071
较佳地，在本发明实施例一提供的上述光电二极管中，N型硅层102中的各凹陷结构的深度h1为
Figure BDA0001272864870000072
N型硅层102中除各凹陷结构以外区域的厚度a1为
Figure BDA0001272864870000073
各凹陷结构的直径d1为
Figure BDA0001272864870000074
每相邻两个凹陷结构之间的距离b1为
Figure BDA0001272864870000075
I型硅层103的厚度c为
Figure BDA0001272864870000076
P型硅层104的厚度e为
Figure BDA0001272864870000077
实施例二
具体地，在本发明实施例二提供的光电二极管中，如图3和图4所示，光电二极管的N型硅层102中的各陷光结构101为凸起结构；各径向结结构105为圆柱状凸起结构。即各陷光结构101为在N型硅层102上的凸起结构，径向结结构105为由N型硅层102的柱状突起结构和贴附该柱状突起结构外壁的I型硅层103和P型硅层104构成的圆柱状凸起结构。
需要说明的是，在本发明实施例二提供的光电二极管的N型硅层102中，各陷光结构101还可以为其他任意形状的凸起结构，例如表面具有锯齿的凸起结构，在此不做限定。此外，径向结结构105还可以为其他形状的凸起结构，例如，圆锥凸起结构，在此不做限定。
并且，通过试验可知，本发明实施例二提供的上述光电二极管的光电转换效率与各硅层的厚度、凸起结构的直径和高度有关。具体地，为使本发明实施例二提供的上述光电二极管获得较高的光电转换效率，如图3所示，N型硅层102中的各凸起结构的高度h2为
Figure BDA0001272864870000078
N型硅层102中除各凸起结构以外区域的厚度a2为
Figure BDA0001272864870000079
各凸起结构的直径d2为
Figure BDA00012728648700000710
每相邻两个凸起结构之间的距离b2为
Figure BDA00012728648700000711
I型硅层103的厚度c为
Figure BDA00012728648700000712
P型硅层104的厚度e为
Figure BDA00012728648700000713
较佳地，在本发明实施例二提供的上述光电二极管中，N型硅层102中的各凸起结构的高度h2为
Figure BDA0001272864870000081
N型硅层102中除各凸起结构以外区域的厚度a2为
Figure BDA0001272864870000082
各凸起结构的直径d2为
Figure BDA0001272864870000083
每相邻两个凸起结构之间的距离b2为
Figure BDA0001272864870000084
I型硅层103的厚度c为
Figure BDA0001272864870000085
P型硅层104的厚度e为
Figure BDA0001272864870000086
相应地，本发明实施例提供了一种上述光电二极管的制作方法，如图5所示，具体可以包括以下步骤：
S501、在N型硅层的表面制作多个陷光结构；
S502、在具有陷光结构的N型硅层上依次形成I型硅层和P型硅层；其中，
在各陷光结构处的N型硅层、I型硅层和P型硅层构成径向结结构的PIN。
在具体实施时，在本发明实施例提供的上述光电二极管的制作方法中，针对本发明实施例一提供的光电二极管，即针对陷光结构为凹陷结构，径向结结构为圆环状孔洞结构的光电二极管，步骤S501在N型硅层的表面制作多个陷光结构，具体可以通过以下方式实现：
具体地，对N型硅层进行光刻胶涂覆、掩模板掩模、曝光、显影、刻蚀、光刻胶剥离，从而得到光电二极管中的具有周期性凹陷结构的N型硅层。并且，该N型硅层中的各凹陷结构的深度可以为
Figure BDA0001272864870000087
N型硅层中除各凹陷结构以外区域的厚度可以为
Figure BDA0001272864870000088
各凹陷结构的直径d1可以为
Figure BDA0001272864870000089
每相邻两个凹陷结构之间的距离b1可以为
Figure BDA00012728648700000810
较佳地，该N型硅层中的各凹陷结构101的深度为
Figure BDA00012728648700000811
N型硅层中除各凹陷结构以外区域的厚度a1为
Figure BDA00012728648700000812
各凹陷结构的直径为
Figure BDA00012728648700000813
每相邻两个凹陷结构之间的距离b1为
Figure BDA00012728648700000814
具体地，在本发明实施例提供的上述光电二极管的制作方法中，针对本发明实施例一提供的光电二极管，即针对陷光结构为凹陷结构，径向结结构为圆环状孔洞结构的光电二极管，步骤S502在具有陷光结构的N型硅层上依次形成I型硅层和P型硅层；其中，在各陷光结构处的N型硅层、I型硅层和P型硅层构成径向结结构的PIN，具体可以通过以下方式实现：
具体地，在制作出周期性凹陷结构的N型硅层上采用等离子体增强化学气相沉积法(Plasma Enhanced Chemical Vapor Deposition，PECVD)依次沉积I型硅层和P型硅层，以在周期性凹陷结构处形成具有周期性圆环状孔洞结构的N型硅层、I型硅层和P型硅层。其中，I型硅层的厚度可以为
Figure BDA0001272864870000091
P型硅层的厚度可以为
Figure BDA0001272864870000092
优选地，I型硅层的厚度为
Figure BDA0001272864870000093
P型硅层的厚度为
Figure BDA0001272864870000094
在具体实施时，在本发明实施例提供的上述光电二极管的制作方法中，针对本发明实施例二提供的光电二极管，即针对陷光结构为凸起结构，径向结结构为圆柱状凸起结构的光电二极管，步骤S501在N型硅层的表面制作多个陷光结构，具体可以通过以下方式实现：
具体地，对N型硅层进行光刻胶涂覆、掩模板掩模、曝光、显影、刻蚀、光刻胶剥离，从而得到光电二极管中的具有周期性凸起结构的N型硅层。并且，该N型硅层中的各凸起结构的高度可以为
Figure BDA0001272864870000095
N型硅层中除各凸起结构以外区域的厚度可以为
Figure BDA0001272864870000096
各凸起结构的直径可以为
Figure BDA0001272864870000097
每相邻两个凸起结构之间的距离可以为
Figure BDA0001272864870000098
较佳地，该N型硅层中的各凸起结构的高度为
Figure BDA0001272864870000099
N型硅层中除各凸起结构以外区域的厚度为
Figure BDA00012728648700000910
各凸起结构的直径为
Figure BDA00012728648700000911
每相邻两个凸起结构之间的距离为
Figure BDA00012728648700000912
具体地，在本发明实施例提供的上述光电二极管的制作方法中，针对本发明实施例二提供的光电二极管，即针对陷光结构为凸起结构，径向结结构为圆柱状凸起结构的光电二极管，步骤S502在具有陷光结构的N型硅层上依次形成I型硅层和P型硅层；其中，在各陷光结构处的N型硅层、I型硅层和P型硅层构成径向结结构的PIN，具体可以通过以下方式实现：
具体地，在制作出周期性凸起结构的N型硅层上采用PECVD法依次沉积I型硅层和P型硅层，以在周期性凸起结构处形成具有周期性圆柱状凸起结构的N型硅层、I型硅层和P型硅层。其中，I型硅层的厚度可以为
Figure BDA0001272864870000101
P型硅层的厚度可以为
Figure BDA0001272864870000102
优选地，I型硅层的厚度为
Figure BDA0001272864870000103
P型硅层的厚度为
Figure BDA0001272864870000104
需要说明的是，在本发明实施例提供的上述光电二极管的制作方法中，制作光电二极管的N型硅层、I型硅层和P型硅层涉及的构图工艺，不仅可以包括光刻胶涂覆、掩模板掩模、曝光、显影、刻蚀、光刻胶剥离等部分或全部的工艺过程，还可以包括其他工艺过程，具体以实际制作过程中形成所需构图的图形为准，在此不做限定。例如，在显影之后和刻蚀之前还可以包括后烘工艺。其中，刻蚀可以为干法刻蚀或者湿法刻蚀，在此不做限定。此外，还可以采用PECVD之外的方法例如电沉积法沉积I型硅层和P型硅层，在此不做限定。
基于同一发明构思，本发明实施例提供了一种X射线探测基板，由于本发明实施例提供的X射线探测基板与上述光电二极管解决问题的原理相似，因此，该X射线探测基板的实施可以参见上述光电二极管的实施，重复之处不再赘述。
具体地，本发明实施例提供的一种X射线探测基板，如图6和图7所示，包括：衬底基板601，设置于衬底基板601上的多个上述光电二极管602，设置于衬底基板601与光电二极管602之间的多个薄膜晶体管603，以及设置于光电二极管602上的多个电流导出部件604；
其中，各薄膜晶体管603与各光电二极管602一一对应，且光电二极管602的N型硅层102与对应的薄膜晶体管603的漏电极连接，或者，光电二极管602的N型硅层102与对应的薄膜晶体管603的源极电连接；
各电流导出部件604与各光电二极管602一一对应，且光电二极管602的P型硅层104与对应的电流导出部件604电连接。
具体地，在本发明实施例提供的上述X射线探测基板中，薄膜晶体管603可以为顶栅型薄膜晶体管，还可以为底栅型薄膜晶体管，在此不做限定。如图6和图7所示，薄膜晶体管603为底栅型薄膜晶体管，包括：栅极金属层6031、栅极绝缘层6032、非晶硅层6033、掺杂非晶硅层6034和源漏极金属层6035。
在具体实施时，在本发明实施例提供的上述X射线探测基板中，如图6和图7所示，电流导出部件604，具体可以包括：
设置于光电二极管602上的第一透明电极层6041，依次设置于薄膜晶体管603和第一透明电极层6041上的钝化层6042和平坦层6043，设置于平坦层6043上且通过贯穿钝化层6042和平坦层6043的接触孔k与第一透明电极层6041电连接的第二透明电极层6044、设置于第二透明电极层6044上的导电金属层6045，设置于导电金属层6045上的保护层6046。其中，第一透明电极层6041用于收集光电二极管602产生的载流子，第二透明电极层6044用于将第一透明电极层6041收集的载流子导出；第一透明电极层6041和第二透明电极层6044的材料可以是氧化铟锡(ITO)、氧化铟锌(IZO)或者石墨烯等透明导电材料，在此不做限定；第一透明电极层6041和第二透明电极层6044的材料可以相同，也可以不同，在此不做限定。
需要说明的是，在具体实施时，在本发明实施例提供的上述X射线探测基板中，还可以省略第一透明电极层6041，直接采用第二透明电极层6044将光电二极管602产生的载流子导出。但是这种情况下，载流子收集效率会大大降低。
具体地，为便于实现第一透明电极层6041与第二透明电极层6044的电连接，以将光电二极管602产生的载流子顺利导出，贯穿钝化层6042和平坦层6043的接触孔k宜设置在光电二极管602的上方。
下面通过两个具体实施例对本发明实施例提供的上述X射线探测基板的结构进行详细说明。
实施例三
具体地，在本发明实施例三提供的X射线探测基板中，如图6所示，光电二极管602的N型硅层102具有的各陷光结构101为凹陷结构，在各陷光结构101处的N型硅层102、I型硅层103和P型硅层104构成的径向结结构为圆环状孔洞结构。第一透明电极层6041通过贯穿钝化层6042和平坦层6043的接触孔k与第二透明电极层6044电连接。
较佳地，为了更好地导出光电二极管602产生的载流子，在本发明实施例三提供的上述X射线探测基板中，如图6所示，贯穿钝化层6042和平坦层6043的接触孔k位于相邻的径向结结构105之间。
实施例四
具体地，在本发明实施例四提供的X射线探测基板中，如图7所示，光电二极管602的N型硅层102具有的各陷光结构101为凸起结构，在各陷光结构101处的N型硅层102、I型硅层103和P型硅层104构成的径向结结构105为圆柱状凸起结构。第一透明电极层6041通过贯穿钝化层6042和平坦层6043的接触孔k与第二透明电极层6044电连接。
较佳地，为了更好地导出光电二极管602产生的载流子，在本发明实施例四提供的上述X射线探测基板中，如图7所示，贯穿钝化层6042和平坦层6043的接触孔k位于径向结结构105之上。
相应地，本发明实施例还提供了一种上述X射线探测基板的制作方法，如图8所示，具体可以包括以下步骤：
S801、在衬底基板上形成薄膜晶体管；
S802、在形成有薄膜晶体管的衬底基板上采用上述制作方法形成与薄膜晶体管一一对应的光电二极管；
S803、在光电二极管上形成与光电二极管一一对应的多个电流导出部件。
具体地，在本发明实施例提供的上述X射线探测基板的制作方法中，步骤S801中形成的薄膜晶体管可以为顶栅型薄膜晶体管，还可以为底栅型薄膜晶体管，在此不做限定。并且，制作顶栅型薄膜晶体管或底栅型薄膜晶体管的方法为现有技术，在此不做赘述。
具体地，由于本发明实施例提供的上述X射线探测基板中采用了本发明实施提供的光电二极管，因此，在本发明实施例提供的上述X射线探测基板的制作方法中，步骤S802在形成有薄膜晶体管的衬底基板上采用上述制作方法形成与薄膜晶体管一一对应的光电二极管的具体实现方式，可以参见本发明实施例提供的上述光电二极管的制作方法，重复之处不再赘述。
具体地，在本发明实施例提供的上述X射线探测基板的制作方法中，步骤S803在光电二极管上形成与光电二极管一一对应的多个电流导出部件，具体可以通过以下方式实现：
首先，在光电二极管的P型硅层上形成第一透明电极层；然后，在第一透明电极层和薄膜晶体管的源漏极金属层上形成钝化层和平坦层，并形成贯穿钝化层和平坦层的接触孔；最后，在平坦层上依次形成第二透明电极层、导电金属层和保护层。其中，第一透明电极层通过贯穿钝化层和平坦层且位于相邻的径向结结构之间的接触孔与第二透明电极层电连接。
本发明实施例提供的上述光电二极管、X射线探测基板及其制作方法，该光电二极管包括：具有多个陷光结构的N型硅层，设置于N型硅层上的I型硅层，以及设置于I型硅层上的P型硅层；其中，在各陷光结构处的N型硅层、I型硅层和P型硅层构成径向结结构的PIN。由于N型硅层、I型硅层和P型硅层在各陷光结构处构成的径向结结构的PIN同时具有陷光功能，因此，该径向结结构的PIN不仅可以使光电二极管内部的光吸收方向与载流子传输方向相互垂直，从而提高了光电二极管的光电转换效率；同时可以使光在P型硅层表面发生多次反射，从而提高了光电二极管对光的吸收效率。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (13)

1.一种光电二极管，其特征在于，包括：具有多个陷光结构的N型硅层，设置于所述N型硅层上的I型硅层，以及设置于所述I型硅层上的P型硅层；其中，
在各所述陷光结构处的所述N型硅层、所述I型硅层和所述P型硅层构成径向结结构的PIN；
各所述陷光结构为圆柱状陷光结构；
各所述径向结结构为环状径向结结构，且呈周期性排布。
2.如权利要求1所述的光电二极管，其特征在于，各所述陷光结构为凹陷结构；所述径向结结构为圆环状孔洞结构。
3.如权利要求2所述的光电二极管，其特征在于，所述N型硅层中的各所述凹陷结构的深度为
Figure FDA0002487400520000011
所述N型硅层中除各所述凹陷结构以外区域的厚度为
Figure FDA0002487400520000012
各所述凹陷结构的直径为
Figure FDA0002487400520000013
每相邻两个所述凹陷结构之间的距离为
Figure FDA0002487400520000014
4.如权利要求1所述的光电二极管，其特征在于，所述陷光结构为凸起结构；所述径向结结构为圆柱状凸起结构。
5.如权利要求4所述的光电二极管，其特征在于，所述N型硅层中的各所述凸起结构的高度为
Figure FDA0002487400520000015
所述N型硅层中除各所述凸起结构以外区域的厚度为
Figure FDA0002487400520000016
各所述凸起结构的直径为
Figure FDA0002487400520000017
每相邻两个所述凸起结构之间的距离为
Figure FDA0002487400520000018
6.如权利要求1-5任一项所述的光电二极管，其特征在于，所述I型硅层的厚度为
Figure FDA0002487400520000019
7.如权利要求1-5任一项所述的光电二极管，其特征在于，所述P型硅层的厚度为
Figure FDA00024874005200000110
8.一种X射线探测基板，其特征在于，包括：衬底基板，设置于所述衬底基板上的多个如权利要求1-7任一项所述的光电二极管，设置于所述衬底基板与所述光电二极管之间的多个薄膜晶体管，以及设置于所述光电二极管上的多个电流导出部件；
其中，各所述薄膜晶体管与各所述光电二极管一一对应，且所述光电二极管的N型硅层与对应的所述薄膜晶体管的漏电极连接；
各所述电流导出部件与各所述光电二极管一一对应，且所述光电二极管的P型硅层与对应的所述电流导出部件电连接。
9.如权利要求8所述的X射线探测基板，其特征在于，所述电流导出部件，具体包括：
设置于所述光电二极管上的第一透明电极层，依次设置于所述薄膜晶体管和所述第一透明电极层上的钝化层和平坦层，设置于所述平坦层上且通过贯穿所述钝化层和平坦层的接触孔与所述第一透明电极层电连接的第二透明电极层、设置于所述第二透明电极层上的导电金属层，设置于所述导电金属层上的保护层。
10.如权利要求9所述的X射线探测基板，其特征在于，所述N型硅层具有的各所述陷光结构为凹陷结构时，贯穿所述钝化层和平坦层的接触孔位于相邻的所述径向结结构之间。
11.如权利要求9所述的X射线探测基板，其特征在于，所述N型硅层具有的各所述陷光结构为凸起结构时，贯穿所述钝化层和平坦层的接触孔位于所述径向结结构之上。
12.一种如权利要求1-7任一项所述的光电二极管的制作方法，其特征在于，包括：
在N型硅层的表面制作多个陷光结构；
在具有所述陷光结构的所述N型硅层上依次形成I型硅层和P型硅层；其中，
在各所述陷光结构处的所述N型硅层、所述I型硅层和所述P型硅层构成径向结结构的PIN。
13.一种如权利要求8-11任一项所述的X射线探测基板的制作方法，其特征在于，包括：
在衬底基板上形成薄膜晶体管；
在形成有所述薄膜晶体管的所述衬底基板上采用如权利要求12所述的制作方法形成与所述薄膜晶体管一一对应的光电二极管；
在所述光电二极管上形成与所述光电二极管一一对应的多个电流导出部件。
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