CN108732741A - 使用复合材料的发光装置、复合材料的制造方法及光学膜 - Google Patents
使用复合材料的发光装置、复合材料的制造方法及光学膜 Download PDFInfo
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- CN108732741A CN108732741A CN201810349774.3A CN201810349774A CN108732741A CN 108732741 A CN108732741 A CN 108732741A CN 201810349774 A CN201810349774 A CN 201810349774A CN 108732741 A CN108732741 A CN 108732741A
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Classifications
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- G02B26/008—Optical devices or arrangements for the control of light using movable or deformable optical elements the movable or deformable optical element controlling the colour, i.e. a spectral characteristic, of the light in the form of devices for effecting sequential colour changes, e.g. colour wheels
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- C—CHEMISTRY; METALLURGY
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V14/00—Controlling the distribution of the light emitted by adjustment of elements
- F21V14/08—Controlling the distribution of the light emitted by adjustment of elements by movement of the screens or filters
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
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- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G03B33/00—Colour photography, other than mere exposure or projection of a colour film
- G03B33/08—Sequential recording or projection
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109343271A (zh) * | 2018-11-13 | 2019-02-15 | 惠州市华星光电技术有限公司 | 背光模组及液晶显示器 |
| CN113943569A (zh) * | 2020-07-15 | 2022-01-18 | 歆炽电气技术股份有限公司 | 量子点复合材料及其制备方法与led封装结构 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10883045B2 (en) * | 2016-05-02 | 2021-01-05 | Current Lighting Solutions, Llc | Phosphor materials including fluidization materials for light sources |
| US10345688B2 (en) * | 2017-04-18 | 2019-07-09 | Unique Materials Co., Ltd. | Light emitting apparatus using composite material |
| CN111033366B (zh) * | 2017-08-17 | 2023-02-28 | 索尼公司 | 光源装置和投影型显示装置 |
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| CN110776918A (zh) * | 2019-11-27 | 2020-02-11 | 重庆医科大学 | 一种新型荧光纳米量子点及其制备方法 |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090321755A1 (en) * | 2007-08-23 | 2009-12-31 | Samsung Electronics Co., Ltd. | Nanocrystal mixture and light-emitting diode using the same |
| TW201245844A (en) * | 2011-02-07 | 2012-11-16 | Intematix Corp | Photoluminescence color wheels |
| WO2014024218A1 (ja) * | 2012-08-06 | 2014-02-13 | パナソニック株式会社 | 蛍光体光学素子、その製造方法及び光源装置 |
| TW201421745A (zh) * | 2012-10-01 | 2014-06-01 | 皇家飛利浦有限公司 | 包含陶瓷封囊之波長轉換元件 |
| US20160032183A1 (en) * | 2014-07-30 | 2016-02-04 | Yagnaseni Ghosh | Alloyed rod structure in a nanocrystalline quantum dot |
| US20160091782A1 (en) * | 2014-09-30 | 2016-03-31 | Seiko Epson Corporation | Light source apparatus and projector |
| US20160250612A1 (en) * | 2013-10-09 | 2016-09-01 | Nanocomposix, Inc. | Encapsulated particles |
| WO2017001542A1 (en) * | 2015-06-30 | 2017-01-05 | Cambridge Enterprise Limited | Luminescent device |
| CN106537608A (zh) * | 2014-07-28 | 2017-03-22 | 皇家飞利浦有限公司 | 具有改进的量子效率的二氧化硅涂敷的量子点 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1812335A4 (en) * | 2004-11-19 | 2009-07-01 | Agency Science Tech & Res | PREPARATION OF CORE / SHELL SEMICONDUCTOR ANOKRISTALS IN AQUEOUS SOLUTIONS |
| KR100783251B1 (ko) * | 2006-04-10 | 2007-12-06 | 삼성전기주식회사 | 양자점을 이용한 다층 구조 백색 발광 다이오드 및 그의제조방법 |
| GB0821122D0 (en) * | 2008-11-19 | 2008-12-24 | Nanoco Technologies Ltd | Semiconductor nanoparticle - based light emitting devices and associated materials and methods |
| US10066164B2 (en) | 2009-06-30 | 2018-09-04 | Tiecheng Qiao | Semiconductor nanocrystals used with LED sources |
| GB0916700D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
| US20130112942A1 (en) | 2011-11-09 | 2013-05-09 | Juanita Kurtin | Composite having semiconductor structures embedded in a matrix |
| US9666766B2 (en) | 2013-08-21 | 2017-05-30 | Pacific Light Technologies Corp. | Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell |
| CN109976025A (zh) * | 2013-09-13 | 2019-07-05 | 凸版印刷株式会社 | 波长转换片和背光单元 |
| US20150137163A1 (en) * | 2013-11-13 | 2015-05-21 | Nanoco Technologies Ltd. | LED Cap Containing Quantum Dot Phosphors |
| JP6428089B2 (ja) * | 2014-09-24 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
| KR102362773B1 (ko) * | 2014-09-30 | 2022-02-15 | 루미리즈 홀딩 비.브이. | 봉입된 환경 내의 양자점 |
| US10266760B2 (en) * | 2015-05-13 | 2019-04-23 | Osram Opto Semiconductors Gmbh | Composition of, and method for forming, a semiconductor structure with multiple insulator coatings |
| KR20180054675A (ko) * | 2015-09-15 | 2018-05-24 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 첨가제 안정화된 복합 나노입자 |
| CN107017325B (zh) * | 2015-11-30 | 2020-06-23 | 隆达电子股份有限公司 | 量子点复合材料及其制造方法与应用 |
| WO2017136839A1 (en) * | 2016-02-04 | 2017-08-10 | Pacific Light Technologies Corp. | Method and apparatus for applying light and heat to quantum dots to increase quantum yield |
| US20180040783A1 (en) * | 2016-08-03 | 2018-02-08 | Lumileds Llc | Coated wavelength converting nanoparticles |
| US10407613B2 (en) * | 2017-01-27 | 2019-09-10 | Osram Opto Semiconductors Gmbh | Composition of, and method for forming, a semiconductor structure with polymer and insulator coatings |
| US10345688B2 (en) * | 2017-04-18 | 2019-07-09 | Unique Materials Co., Ltd. | Light emitting apparatus using composite material |
-
2017
- 2017-04-18 US US15/490,766 patent/US10345688B2/en active Active
-
2018
- 2018-04-13 TW TW107112763A patent/TWI653314B/zh active
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- 2018-08-23 US US16/109,789 patent/US10234753B2/en active Active
- 2018-08-23 US US16/109,800 patent/US10317785B2/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090321755A1 (en) * | 2007-08-23 | 2009-12-31 | Samsung Electronics Co., Ltd. | Nanocrystal mixture and light-emitting diode using the same |
| TW201245844A (en) * | 2011-02-07 | 2012-11-16 | Intematix Corp | Photoluminescence color wheels |
| WO2014024218A1 (ja) * | 2012-08-06 | 2014-02-13 | パナソニック株式会社 | 蛍光体光学素子、その製造方法及び光源装置 |
| TW201421745A (zh) * | 2012-10-01 | 2014-06-01 | 皇家飛利浦有限公司 | 包含陶瓷封囊之波長轉換元件 |
| US20160250612A1 (en) * | 2013-10-09 | 2016-09-01 | Nanocomposix, Inc. | Encapsulated particles |
| CN106537608A (zh) * | 2014-07-28 | 2017-03-22 | 皇家飞利浦有限公司 | 具有改进的量子效率的二氧化硅涂敷的量子点 |
| US20160032183A1 (en) * | 2014-07-30 | 2016-02-04 | Yagnaseni Ghosh | Alloyed rod structure in a nanocrystalline quantum dot |
| US20160091782A1 (en) * | 2014-09-30 | 2016-03-31 | Seiko Epson Corporation | Light source apparatus and projector |
| WO2017001542A1 (en) * | 2015-06-30 | 2017-01-05 | Cambridge Enterprise Limited | Luminescent device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109343271A (zh) * | 2018-11-13 | 2019-02-15 | 惠州市华星光电技术有限公司 | 背光模组及液晶显示器 |
| CN113943569A (zh) * | 2020-07-15 | 2022-01-18 | 歆炽电气技术股份有限公司 | 量子点复合材料及其制备方法与led封装结构 |
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