CN108722837A - A kind of capacitive ultrasound transducer and its manufacturing method - Google Patents
A kind of capacitive ultrasound transducer and its manufacturing method Download PDFInfo
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- CN108722837A CN108722837A CN201810497011.3A CN201810497011A CN108722837A CN 108722837 A CN108722837 A CN 108722837A CN 201810497011 A CN201810497011 A CN 201810497011A CN 108722837 A CN108722837 A CN 108722837A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
- B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/206—Insulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2313/00—Elements other than metals
- B32B2313/04—Carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
Abstract
The present invention discloses a kind of capacitive ultrasound transducer and its manufacturing method.Wherein, the ultrasonic transducer includes：Substrate, dielectric isolation layer and the graphene layer set gradually from top to bottom, the lower electrode of position setting corresponding with the graphene layer over the substrate, cavity is set between the graphene layer and the lower electrode, and the graphene layer, the lower electrode and the cavity form flat capacitor structure.The method is for manufacturing above-mentioned ultrasonic transducer.Capacitive ultrasound transducer and its manufacturing method provided by the invention, improve the sensitivity of ultrasonic transducer.
Description
Technical field
The present invention relates to electronic technology fields, and in particular to a kind of capacitive ultrasound transducer and its manufacturing method.
Background technology
Photoacoustic imaging as a kind of imaging of medical means novel in recent years, have safe to the human body, small, cost compared with
The features such as low, imaging depth is adjustable, resolution ratio higher, has in technical fields such as medical diagnosis and therapy, remote sensing and remote controls
It is widely applied foreground.
Ultrasonic transducer is the component realized acoustic energy and exchanged with electric energy, is the sensing unit for realizing photoacoustic imaging most critical.
In the prior art, conventional piezoelectric ceramic ultrasonic because it is high with electromechanical conversion efficiency, easily with Circuit Matching, performance it is stable,
Easy processing and it is at low cost the advantages that be widely used.But it since piezoceramic material is there are acoustic impedance height, is not easy and people
The acoustic impedance match of body soft tissue and water, and it is high with mechanical quality factor, and narrow bandwidth, brittleness is big, tensile strength is low, highly dense
The defects of spending array element and ultra-thin high-frequency transducer not easy to be processed.
Therefore, a kind of ultrasonic transducer how is proposed, the sensitivity that can improve ultrasonic transducer urgently solves as industry
Important topic certainly.
Invention content
For the defects in the prior art, a kind of capacitive ultrasound transducer of present invention offer and its manufacturing method.
On the one hand, the present invention proposes a kind of capacitive ultrasound transducer, including set gradually from top to bottom substrate, insulation
Separation layer and graphene layer, electrode under position corresponding with the graphene layer is arranged over the substrate, the graphene layer
Cavity is set between the lower electrode, and the graphene layer, the lower electrode and the cavity form flat capacitor structure.
Wherein, the graphene layer is 1~10 layer graphene film.
Wherein, the cavity is circular hole, and the radius of the circular hole is 0.5~200 μm.
Wherein, the thickness of the cavity is 0.1~10 μm.
Wherein, the substrate uses silica or flexible organic material.
Wherein, the lower electrode is using germanium and golden clad metal electrode, polysilicon electrode or transparent electro-conductive glass.
Wherein, the dielectric isolation layer is using silica or flexible organic insulating material.
Wherein, further include top electrode contact, the top electrode contact is arranged on the dielectric isolation layer, and with the stone
Black alkene layer is connected.
On the other hand, the present invention provides a kind of capacitive ultrasound transducer manufacturing method, including：
Lower electrode is formed on substrate；
Dielectric isolation layer is formed over the substrate, and the dielectric isolation layer covers the lower electrode；
Dielectric isolation layer above the lower electrode produces the cavity for penetrating through the dielectric isolation layer；
Graphene layer is transferred on the dielectric isolation layer, and covers the cavity.
Wherein, graphene layer is transferred on the dielectric isolation layer described, and further includes before covering the cavity：
Top electrode contact is formed on the dielectric isolation layer；
Correspondingly, graphene layer is transferred on the dielectric isolation layer, and covers the cavity and includes：
The graphene layer is transferred on the dielectric isolation layer, and at least covers one of the top electrode contact
Point, to realize being electrically connected for the graphene layer and the top electrode contact.
Capacitive ultrasound transducer and its manufacturing method provided by the invention, due to set gradually from top to bottom substrate, absolutely
Edge separation layer and graphene layer, electrode under position corresponding with graphene layer is arranged on substrate, in graphene layer and lower electrode
Between cavity is set, graphene layer, lower electrode and cavity form flat capacitor structure, improve the sensitive of ultrasonic transducer
Degree.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Some bright embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram of one embodiment of the invention capacitive ultrasound transducer；
Fig. 2 is the structural schematic diagram of another embodiment of the present invention capacitive ultrasound transducer；
Fig. 3 is the flow diagram of the manufacturing method of one embodiment of the invention capacitive ultrasound transducer；
Fig. 4 a are the formation schematic diagram of electrode under another embodiment of the present invention；
Fig. 4 b are the formation schematic diagram of another embodiment of the present invention dielectric isolation layer；
Fig. 4 c are the formation schematic diagram of another embodiment of the present invention top electrode contact；
Fig. 4 d are the formation schematic diagram of another embodiment of the present invention circular hole；
Fig. 4 e are the formation schematic diagram of another embodiment of the present invention graphene layer；
Reference sign：
1- substrates；2- dielectric isolation layers；
Electrode under 3-；4- cavitys；
5- graphene layers；6- top electrodes contact；
41- substrates；42- dielectric isolation layers；
Electrode under 43-；44- circular holes；
45- graphene films；46- top electrodes contact.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached in the embodiment of the present invention
Figure, technical solution in the embodiment of the present invention are explicitly described, it is clear that described embodiment is a part of the invention
Embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making wound
The every other embodiment obtained under the premise of the property made labour, shall fall within the protection scope of the present invention.
Capacitive ultrasound transducer provided by the invention is made of graphene, and it is thin that graphene can be fabricated to graphene
Film, for outer force effect high sensitivity, is well suited for being used for high-precision sensing due to graphene film oscillating mass very little；Graphite
Alkene has the characteristics that high Young's modulus, and by designing hanging structure, broad spectral response may be implemented.Graphene also can be with flexible liner
Bottom is combined, and can be fabricated to flexible device, to adapt to the different application scene of photoacoustic imaging；Graphene itself can be used as good
Conductive material, the electrode plate structure for constituting capacitance.So the These characteristics based on graphene, the present invention proposes a kind of capacitance
Formula ultrasonic transducer, graphene is applied in the capacitive ultrasound transducer for meeting photoacoustic imaging, super using above-mentioned condenser type
Biological tissue's signal of the detectable 1~20MHz of instrument of sonic transducer.
Fig. 1 is the structural schematic diagram of one embodiment of the invention capacitive ultrasound transducer, as shown in Figure 1, the present invention provides
Capacitive ultrasound transducer, including the substrate 1, dielectric isolation layer 2 and the graphene layer 5 that set gradually from top to bottom, in substrate 1
The upper lower electrode 3 of position setting corresponding with graphene layer 5, setting cavity 4 between graphene layer 5 and lower electrode 3, graphene layer 5,
Lower electrode 3 and cavity 4 form flat capacitor structure.
Specifically, substrate 1 is used to carry the structure of the entire device of the capacitive ultrasound transducer, and dioxy may be used
SiClx or flexible organic material；Dielectric isolation layer 2 is arranged on substrate 1, is used to support graphene layer 5 and plays insulating effect,
Silica or flexible organic insulating material may be used；Graphene layer 5 is arranged on dielectric isolation layer 2, is passed as ultrasonic wave
The electric pole plate of sensor and the flat capacitor structure；Lower electrode 3 is arranged on substrate 1, and is set relatively with graphene layer 5
It sets, the lower electrode plate as the flat capacitor structure；Cavity 4, graphene layer are set between graphene layer 5 and lower electrode 3
5, lower electrode 3 and cavity 4 form the flat capacitor structure.When receiving ultrasonic wave, hanging graphene layer 5 can be super
It under the action of sound wave, vibrates, to change the capacitance of the flat capacitor structure, by the variation for detecting the capacitance
It may finally realize the detection to ultrasonic wave.
Capacitive ultrasound transducer and its manufacturing method provided by the invention, due to set gradually from top to bottom substrate, absolutely
Edge separation layer and graphene layer, electrode under position corresponding with graphene layer is arranged on substrate, in graphene layer and lower electrode
Between cavity is set, graphene layer, lower electrode and cavity form flat capacitor structure, improve the sensitive of ultrasonic transducer
Degree, to improve the precision to ultrasonic listening.
On the basis of the various embodiments described above, further, graphene layer 5 is 1~10 layer graphene film.
On the basis of the various embodiments described above, further, cavity 4 is circular hole, and the radius of the circular hole is 0.5~200 μ
m.The detection of the information such as the intensity to special frequency band range ultrasonic wave, frequency may be implemented in radius by changing the circular hole.
On the basis of the various embodiments described above, further, the thickness of the cavity is 0.1~10 μm.
On the basis of the various embodiments described above, further, substrate 1 uses silica or flexible organic material.Its
In, silica is transparent material, can improve the transparency of the ultrasonic transducer, be passed through convenient for light.Had using flexibility
Machine material is conducive to improve the flexibility of the ultrasonic transducer entirety, is convenient for practical application.
On the basis of the various embodiments described above, further, lower electrode 3 is using germanium and golden clad metal electrode, polysilicon
Electrode or transparent electro-conductive glass.Wherein, when using germanium and golden clad metal electrode, the germanium and golden clad metal electrode
Lower layer be germanium, upper layer is gold, and the thickness of germanium can be 50nm, and golden thickness is 50~200nm.
On the basis of the various embodiments described above, further, dielectric isolation layer 2 is organic absolutely using silica or flexibility
Edge material.
Fig. 2 is the structural schematic diagram of another embodiment of the present invention capacitive ultrasound transducer, as shown in Fig. 2, the present invention carries
The capacitive ultrasound transducer of confession further includes top electrode contact 6, and top electrode contact 6 is arranged on dielectric isolation layer 3, and and graphite
Alkene layer 5 is connected, for example, graphene layer 5 covers a part for the top electrode contact 6 being arranged on dielectric isolation layer 3.Electrode contacts
6 for external by graphene layer 5, and germanium and golden clad metal electrode, polysilicon electrode or transparent may be used in electrode contacts 6
Electro-conductive glass.Wherein, when top electrode contact 6 is using germanium and golden clad metal electrode, the germanium and golden clad metal electrode
Lower layer is germanium, and upper layer is gold, and the thickness of germanium can be 50nm, and golden thickness is 50~200nm.
Fig. 3 is the flow diagram of the manufacturing method of one embodiment of the invention capacitive ultrasound transducer, as shown in figure 3,
Capacitive ultrasound transducer manufacturing method provided in an embodiment of the present invention, including：
S301, lower electrode is formed on substrate；
Specifically, the techniques such as ultraviolet photolithographic and sputtering may be used and produce lower electrode on substrate, the substrate can be with
Using silica or flexible organic material, the lower electrode may be used germanium and golden clad metal electrode, polysilicon electrode or
The transparent electro-conductive glass of person.Wherein, when using germanium and golden clad metal electrode, the lower layer of the germanium and golden clad metal electrode
For germanium, upper layer is gold, and the thickness of germanium can be 50nm, and golden thickness is 50~200nm.
S302, dielectric isolation layer is formed over the substrate, the dielectric isolation layer covers the lower electrode；
It specifically, can be heavy by the vapour deposition process of plasma enhanced chemical or chemical spin-coating method over the substrate
Shallow lake forms dielectric isolation layer, and silica or flexible organic insulating material may be used in the dielectric isolation layer.Wherein, described exhausted
Edge separation layer covers the lower electrode that previous step is formed.The thickness of the dielectric isolation layer is set according to actual needs
It sets, the embodiment of the present invention does not limit.
S303, the dielectric isolation layer above the lower electrode produce the cavity for penetrating through the dielectric isolation layer；
Specifically, dielectric isolation layer system that can be by techniques such as ultraviolet photolithographic and chemical attacks above the lower electrode
The cavity for penetrating through the dielectric isolation layer is made, the cavity can be circular hole, and the diameter of the circular hole is according to different ultrasounds
Wave signal frequency range is configured, and the embodiment of the present invention does not limit.Wherein, the height of the cavity can be 0.1~10 μ
m。
S304, graphene layer is transferred on the dielectric isolation layer, and covers the cavity.
Specifically, using the method for graphene dry method stamp transfer, graphene layer is transferred on the dielectric isolation layer,
And cover the cavity so that the graphene layer, the cavity and the lower electrode constitute flat capacitor structure, the stone
Electric pole plate of the black alkene layer as the capacitance structure, lower electrode plate of the lower electrode as the capacitance structure.Wherein, institute
It states graphene layer and 1 to 10 layer graphene film may be used.
The manufacturing method of capacitive ultrasound transducer provided by the invention, due to sequentially forming substrate, insulation from top to bottom
Separation layer and graphene layer, on substrate position corresponding with graphene layer produce lower electrode, in graphene layer and lower electrode
Between form cavity, graphene layer, lower electrode and cavity form flat capacitor structure, improve the sensitive of ultrasonic transducer
Degree.
On the basis of the various embodiments described above, further, graphene layer is transferred to the dielectric isolation layer described
On, and further include before covering the cavity：
Top electrode contact is formed on the dielectric isolation layer；
Correspondingly, graphene layer is transferred on the dielectric isolation layer, and covers the cavity and includes：
The graphene layer is transferred on the dielectric isolation layer, and at least covers one of the top electrode contact
Point, to realize being electrically connected for the graphene layer and the top electrode contact.
Specifically, after forming the dielectric isolation layer, ultraviolet photolithographic, sputtering and wet etching may be used, or
It the techniques such as is lifted away from and produces top electrode contact, germanium and golden clad metal electrode, polysilicon electricity may be used in the top electrode contact
Pole or transparent electro-conductive glass.Wherein, when the top electrode contact is using germanium and golden clad metal electrode, the germanium and gold
The lower layer of clad metal electrode is germanium, and upper layer is gold, and the thickness of germanium can be 50nm, and golden thickness is 50~200nm.Described
After top electrode contact completes, when the graphene layer is transferred on the dielectric isolation layer, the graphene layer
The part that the top electrode contact can at least be covered, to realize being electrically connected for the graphene layer and the top electrode contact
It connects, in order to by the top electrode contact that the graphene layer is external.
The specific implementation of the manufacturing method of the capacitive ultrasound transducer for another embodiment that the present invention will be described in detail below
Process.
Step 1: Fig. 4 a are the formation schematic diagram of electrode under another embodiment of the present invention, as shown in fig. 4 a, in silica
Germanium and golden clad metal electrode are formed by the techniques such as ultraviolet photolithographic and sputtering on substrate 41, as lower electrode 43.Wherein, described
The lower layer of germanium and golden clad metal electrode is germanium, and upper layer is gold, and the thickness of germanium can be 50nm, and golden thickness is 100nm.
Step 2: the formation schematic diagram that Fig. 4 b are another embodiment of the present invention dielectric isolation layer passes through as shown in Figure 4 b
The vapour deposition process of gas ions enhancing chemistry precipitates in silicon dioxide substrates 41 and lower electrode 43 forms being dielectrically separated from for 1 μ m-thick
Layer 42, dielectric isolation layer 42 use silica.
Step 3: Fig. 4 c are the formation schematic diagram of another embodiment of the present invention top electrode contact, as illustrated in fig. 4 c, using purple
Outer photoetching, sputtering and wet etching produce top electrode contact 46 on dielectric isolation layer 42, and top electrode contact 46 is using transparent
Electro-conductive glass.
Step 4: the formation schematic diagram that Fig. 4 d are another embodiment of the present invention circular hole passes through ultraviolet photolithographic as shown in figure 4d
The circular hole 44 of perforation dielectric isolation layer, circular hole are produced with dielectric isolation layer 42 of the techniques above lower electrode 43 such as chemical attacks
The height of a diameter of 10 μm of 44, circular hole 44 is 850nm.
Step 5: Fig. 4 e are the formation schematic diagram of another embodiment of the present invention graphene layer, as shown in fig 4e, using graphite
5 layer graphene films 45 are transferred on dielectric isolation layer 42 by the method for alkene dry method stamp transfer, and cover entire circular hole 44 with
And a part for top electrode contact 46, to make graphene film 45, circular hole 44 and lower electrode 43 constitute flat capacitor structure,
Graphene film 45 is carried out external by top electrode contact 46.
The detailed process of the method for the present invention embodiment is referred to the introduction of above-mentioned each system embodiment, no longer superfluous herein
It states.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, it will be understood by those of ordinary skill in the art that：It still may be used
With technical scheme described in the above embodiments is modified or equivalent replacement of some of the technical features；
And these modifications or replacements, various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of capacitive ultrasound transducer, which is characterized in that including set gradually from top to bottom substrate, dielectric isolation layer and
Graphene layer, the lower electrode of corresponding with graphene layer position setting over the substrate, the graphene layer and it is described under
Cavity is set between electrode, and the graphene layer, the lower electrode and the cavity form flat capacitor structure.
2. ultrasonic transducer according to claim 1, which is characterized in that the graphene layer is that 1~10 layer graphene is thin
Film.
3. ultrasonic transducer according to claim 1, which is characterized in that the cavity is circular hole, the radius of the circular hole
It is 0.5~200 μm.
4. ultrasonic transducer according to claim 1, which is characterized in that the thickness of the cavity is 0.1~10 μm.
5. ultrasonic transducer according to claim 1, which is characterized in that the substrate is had using silica or flexibility
Machine material.
6. ultrasonic transducer according to claim 1, which is characterized in that the lower electrode is using germanium and golden composition metal electricity
Pole, polysilicon electrode or transparent electro-conductive glass.
7. ultrasonic transducer according to claim 1, which is characterized in that the dielectric isolation layer using silica or
Flexible organic insulating material.
8. ultrasonic transducer according to any one of claims 1 to 7, which is characterized in that further include top electrode contact, it is described
The setting of top electrode contact is connected on the dielectric isolation layer, and with the graphene layer.
9. a kind of capacitive ultrasound transducer manufacturing method, which is characterized in that including：
Lower electrode is formed on substrate；
Dielectric isolation layer is formed over the substrate, and the dielectric isolation layer covers the lower electrode；
Dielectric isolation layer above the lower electrode produces the cavity for penetrating through the dielectric isolation layer；
Graphene layer is transferred on the dielectric isolation layer, and covers the cavity.
10. according to the method described in claim 9, it is characterized in that, graphene layer is transferred to described be dielectrically separated from described
On layer, and further include before covering the cavity：
Top electrode contact is formed on the dielectric isolation layer；
Correspondingly, graphene layer is transferred on the dielectric isolation layer, and covers the cavity and includes：
The graphene layer is transferred on the dielectric isolation layer, and at least covers a part for the top electrode contact, with
Realize being electrically connected for the graphene layer and the top electrode contact.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810497011.3A CN108722837A (en) | 2018-05-22 | 2018-05-22 | A kind of capacitive ultrasound transducer and its manufacturing method |
| PCT/CN2018/094768 WO2019223071A1 (en) | 2018-05-22 | 2018-07-06 | Capacitive ultrasonic transducer and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810497011.3A CN108722837A (en) | 2018-05-22 | 2018-05-22 | A kind of capacitive ultrasound transducer and its manufacturing method |
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| CN108722837A true CN108722837A (en) | 2018-11-02 |
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| WO (1) | WO2019223071A1 (en) |
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| CN113243921A (en) * | 2020-02-13 | 2021-08-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flexible bioelectricity dry electrode, manufacturing method thereof and manufacturing method of flexible substrate film |
| WO2021167669A3 (en) * | 2019-11-26 | 2021-11-11 | Graphaudio Inc. | Graphene transducers |
| CN113701937A (en) * | 2021-08-26 | 2021-11-26 | 苏州微光电子融合技术研究院有限公司 | Air pressure sensor and preparation method thereof |
| CN114505213A (en) * | 2022-01-20 | 2022-05-17 | 中国兵器工业集团第二一四研究所苏州研发中心 | CMUT chip, processing method thereof and CMUT |
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