CN107203739A - Ultrasonic sensor and its manufacture method - Google Patents
Ultrasonic sensor and its manufacture method Download PDFInfo
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- CN107203739A CN107203739A CN201710245708.7A CN201710245708A CN107203739A CN 107203739 A CN107203739 A CN 107203739A CN 201710245708 A CN201710245708 A CN 201710245708A CN 107203739 A CN107203739 A CN 107203739A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
Abstract
This application discloses ultrasonic sensor and its manufacture method.Methods described includes forming at least one ultrasonic transducer, including：Laminated piezoelectric is formed, the laminated piezoelectric includes piezoelectric layer, and the first electrode and second electrode on the first surface and second surface of the piezoelectric layer respectively, and the first surface and the second surface are relative to each other；And the electrical connection formed between the laminated piezoelectric and the cmos circuit, wherein, the piezoelectric layer is made up of organic piezopolymer.This method is using organic piezopolymer formation piezoelectric layer, so as to reduce manufacturing cost and improve the performance of sensor.
Description
Technical field
The present invention relates to biometric sensor, more particularly, to ultrasonic sensor and its manufacture method.
Background technology
Living things feature recognition is the technology for distinguishing different biological features, including fingerprint, palmmprint, face, DNA, sound
Etc. identification technology.Fingerprint refers to the convex uneven lines of the positive surface skin fovea superior of the finger tips of people, the regular arrangement form of lines
Different line types.Fingerprint recognition refers to by the details of relatively more different fingerprints to carry out identity authentication.Due to lifelong
Consistency, uniqueness and convenience, the application of fingerprint recognition are more and more extensive.
In fingerprint recognition, information in fingerprint is obtained using sensor.According to the difference of operation principle, fingerprint sensor
Optics, electric capacity, pressure, sonac can be divided into.Optical sensor volume is larger, and price is relatively high, and for fingerprint
Drying or dampness it is sensitive, belong to first generation fingerprint identification technology.Optical fingerprint identification system can not be penetrated due to light
Skin surface, so can only be by scanning the surface of finger skin, it is impossible to be deep into skin corium.In this case, finger is dry
The effect of net degree direct influence identification, if having glued more dust, sweat etc. in user's finger, may just occur identification
The situation of error.Also, touched if people do a fingerprint hand according to finger, it is also possible to pass through identifying system.Therefore, for
For family, optical sensor the problem of existing for the use of safety and stability.Capacitive fingerprint sensor technology is used
Array of capacitors detects the lines of fingerprint, belongs to second generation fingerprint sensor.Each capacitor includes two pole plates.Touched in finger
When touching, the lines of fingerprint is located between pole plate, forms a dielectric part, so as to detect fingerprint according to the change of electric capacity
Lines.Capacitive fingerprint sensing device is lower and compact than optics sensor price, and stability is high, making in actual product
Use more attractive.For example, the fingerprint sensor used in many mobile phones is capacitive fingerprint sensing device.However, electric capacity
Formula fingerprint sensor has the shortcomings that to evade, i.e., influenceed larger by temperature, humidity, contamination.
As a further improvement, third generation fingerprint sensor has been developed, wherein utilizing the inverse piezoelectricity of piezoelectric
Effect produces ultrasonic wave.The ultrasonic wave shows different reflectivity and transmission when touching fingerprint in the ridge, valley in fingerprint
Rate.Finger print information can be read by the ultrasonic beam signal scanned in certain area.The ultrasonic wave that ultrasonic sensor is produced
It can penetrate the phone housing being made up of glass, aluminium, stainless steel, sapphire or plastics to be scanned, so that by ultrasound
Wave sensor is arranged in phone housing.The advantage provides for the mobile terminal of Customer design a new generation gracefulness, innovation, differentiation
Flexibility.In addition, the experience of user also gets a promotion, scanning fingerprint can not be influenceed by there may be contamination on finger, example
Such as sweat, hand lotion, so as to improve the stability and accuracy of fingerprint sensor.
Existing ultrasonic sensor includes the ultrasonic transducer and cmos circuit integrated.Eutectic bonding is collection
Into cmos circuit and the effective ways of ultrasonic transducer.But, bonding slurry overflow phenomena can be produced in bonding process, is led
Cause the structure member short circuit of tube core and fail, yield greatly reduces.Meanwhile, bonding technology is not high to inclined precision, so as to lead
The size of the eutectic bonding point of electrical connection between two disks of cause is larger, improves manufacturing cost.It is integrated using bonding technology
Cmos circuit and ultrasonic transducer cause manufacturing process complication, high cost and low yield.
The content of the invention
In view of this, it is an object of the invention to provide ultrasonic sensor and its manufacture method, wherein, on cmos circuit
The piezoelectric layer of organic piezopolymer composition is formed to substitute eutectic bonding technique, so as to simplify manufacturing process.
According to an aspect of the present invention there is provided a kind of method for manufacturing ultrasonic sensor, including：Form cmos circuit；
And at least one ultrasonic transducer, the cmos circuit and at least one described ultrasonic wave are formed on the cmos circuit
Transducer is connected, for driving at least one described ultrasonic transducer and at least one described ultrasonic transducer of processing to produce
Detection signal, wherein, the step of forming at least one ultrasonic transducer includes：Form laminated piezoelectric, the laminated piezoelectric
Including piezoelectric layer, and the first electrode and second electrode on the first surface and second surface of the piezoelectric layer respectively,
The first surface and the second surface are relative to each other；And the electricity formed between the laminated piezoelectric and the cmos circuit
Connection, wherein, the piezoelectric layer is made up of organic piezopolymer.
Preferably, organic piezopolymer include selected from polyvinylidene fluoride, polyvinylidene fluoride-trifluoro-ethylene,
At least one of polytetrafluoroethylene (PTFE), polyvinylide pie, bromination diisopropylamine.
Preferably, the step of forming laminated piezoelectric includes forming the piezoelectric layer using following steps：Make mixed solution；
Apply mixed solution film forming；And drying forms organic glue-line, wherein, organic glue-line is used as the piezoelectric layer.
Preferably, after organic glue-line is formed, in addition at least one following steps are performed：Organic glue-line is carried out brilliant
Change is handled；And polarization process is carried out to organic glue-line.
Preferably, the step of Crystallizing treatment includes：Predetermined temperature between the curie point and fusing point of organic glue-line
Heat predetermined crystallization time.
Preferably, the step of forming cmos circuit includes：At least one transistor is formed on substrate；And it is described extremely
Multiple wiring layers and multiple interlayer dielectric layers are formed on a few transistor, wherein, the multiple wiring layer is by the multiple layer
Between dielectric layer be separated into multiple different aspects.
Preferably, the step of forming the electrical connection between the laminated piezoelectric and the cmos circuit includes：Described
Insulating barrier is formed on cmos circuit；At least one wiring arrived separately in the multiple wiring layer is formed in the insulating barrier
The first opening and the second opening of layer；Formed to be open through described first and the first electrode is connected at least one described cloth
First contact of line layer；And formed through the piezoelectric layer and second opening by the second electrode be connected to it is described extremely
Second contact of a few wiring layer.
Preferably, second contact is spaced apart with the first electrode.
Preferably, first contact, the first contact filling described first are formed when forming the first electrode
Opening.
Preferably, before the second electrode is formed, in addition to formed through the piezoelectric layer and first opening
Reach the first through hole of at least one wiring layer, the third through-hole of the first electrode is reached through the piezoelectric layer,
First contact is formed when forming the second electrode, first contact extends in the piezoelectric layer surface and fills described
First through hole and the third through-hole, so as to be that the first electrode is connected at least one described wiring layer.
Preferably, before the second electrode is formed, in addition to formed through the piezoelectric layer and second opening
The second through hole of at least one wiring layer is reached, second contact is formed when forming the second electrode, described the
Two contact filling second through holes.
Preferably, the step of forming first to third through-hole includes：Mask layer is formed on the piezoelectric layer；Covered described
The the 3rd to the 5th is formed in mold layer to be open；Via piezoelectric layer described in the 3rd to the 5th opening etching；And covered described in removing
Mold layer.
Preferably, the mask layer includes being selected from Al2O3、TiO2、ZnO、ZrO2And Ta2O5It is any.
Preferably, it is described to be etched to dry etching, etchant is used as using oxygen.
Preferably, the step of forming the electrical connection between the laminated piezoelectric and the cmos circuit includes：Described
Pad is formed on one surface；Form the second contact that the pad is connected to through the piezoelectric layer and by the second electrode；
And the laminated piezoelectric is adhered on the cmos circuit using the first adhesive linkage, wherein, first adhesive linkage is by each
Anisotropy electroconductive binder constitute, between the first electrode and at least one described wiring layer, and it is described pad with
Between at least one described wiring layer, the first electrode is connected at least one described wiring via first adhesive linkage
Layer, the second electrode is connected at least one described cloth via the described second contact, the pad and first adhesive linkage
Line layer.
Preferably, the pad is spaced apart with the first electrode.
Preferably, before the second electrode is formed, in addition to formed through the piezoelectric layer arrival pad
Second through hole, forms second contact, the second contact filling second through hole when forming the second electrode.
Preferably, the step of forming the second through hole includes：Mask layer is formed on the piezoelectric layer；In the masking layer
Form the 4th opening；Via piezoelectric layer described in the 4th opening etching；And remove the mask layer.
Preferably, the mask layer includes being selected from Al2O3、TiO2、ZnO、ZrO2And Ta2O5It is any.
Preferably, it is described to be etched to dry etching, etchant is used as using oxygen.
Preferably, in addition to：Passivation layer is formed on the laminated piezoelectric.
Preferably, the passivation layer selected from any of following material by constituting：Parylene, polyimides, SU-8,
Al2O3、ZrO2、HfO2、SiO2And Si3N4。
Preferably, in addition to：The second adhesive linkage is formed on the passivation layer；And formed on second adhesive linkage
Pressing plate.
Preferably, the pressing plate selected from any of following material by constituting：Plastics, ceramics, sapphire, metal, alloy,
Makrolon and glass.
Preferably, the thickness of the piezoelectric layer is in the range of 5 microns to 20 microns.
According to another aspect of the present invention there is provided a kind of ultrasonic sensor, including：Cmos circuit；And at least one
Ultrasonic transducer, wherein, the cmos circuit is connected with least one described ultrasonic transducer, for drive it is described at least
The detection signal that one ultrasonic transducer and at least one described ultrasonic transducer of processing are produced, wherein, described at least one
Individual ultrasonic transducer includes：Laminated piezoelectric, the laminated piezoelectric includes piezoelectric layer, and respectively positioned at the of the piezoelectric layer
First electrode and second electrode on one surface and second surface, the first surface are relative to each other with the second surface, its
In, electrically connected between the laminated piezoelectric and the cmos circuit, the piezoelectric layer is made up of organic piezopolymer.
Preferably, organic piezopolymer include selected from polyvinylidene fluoride, polyvinylidene fluoride-trifluoro-ethylene,
At least one of polytetrafluoroethylene (PTFE), polyvinylide pie, bromination diisopropylamine.
Preferably, in the polyvinylidene fluoride-trifluoro-ethylene polyvinylidene fluoride and the mol ratio of trifluoro-ethylene exists
60:40 to 90:In the range of 10.
Preferably, the piezoelectric layer has the crystalline phase after the processing of at least one crystallization and polarization.
Preferably, in addition to it is covered in the metal level of the piezoelectric layer surface.
Preferably, the piezoelectric layer includes following at least one nano particle：CNT and redox graphene.
Preferably, the cmos circuit includes substrate and at least one transistor formed on substrate.
Preferably, the cmos circuit also includes the multiple wiring layers and multiple layers being located at least one described transistor
Between dielectric layer, the multiple wiring layer is separated into multiple different aspects by the multiple interlayer dielectric layer.
Preferably, in addition to：Insulating barrier between the cmos circuit and the laminated piezoelectric；In the insulating barrier
Arrive separately at the first opening and the second opening of at least one wiring layer in the multiple wiring layer；Through the described first opening
The first electrode is connected to the first contact of at least one wiring layer；And through the piezoelectric layer and described second
It is open and the second electrode is connected to the second contact of at least one wiring layer.
Preferably, second contact is spaced apart with the first electrode.
Preferably, the first electrode is contacted with described first and formed by same conductive layer, the first contact filling
First opening.
Preferably, in addition to：The of at least one wiring layer is reached through the piezoelectric layer and first opening
One through hole, the third through-hole through the piezoelectric layer arrival first electrode, first contact is in the piezoelectric layer surface
Extend and fill the first through hole and the third through-hole, so as to be that the first electrode is connected at least one described cloth
Line layer.
Preferably, in addition to formed through the piezoelectric layer and second opening and reach at least one wiring layer
Second through hole, the second contact filling second through hole.
Preferably, in addition to：Pad on the first surface of the piezoelectric layer；Through the piezoelectric layer and by described in
Second electrode is connected to the second contact of the pad；And the laminated piezoelectric is adhered on the cmos circuit first
Adhesive linkage, wherein, first adhesive linkage is made up of anisotropic-electroconductive adhesive, positioned at the first electrode with it is described at least
Between one wiring layer, and between the pad and at least one described wiring layer, the first electrode is via described first
Adhesive linkage is connected at least one described wiring layer, and the second electrode is via the described second contact, the pad and described the
One adhesive linkage is connected at least one described wiring layer.
Preferably, in addition to：Passivation layer on the laminated piezoelectric.
Preferably, in addition to：The second adhesive linkage on the passivation layer；And on second adhesive linkage
Pressing plate.
Preferably, the pressing plate selected from any of following material by constituting：Plastics, ceramics, sapphire, metal, alloy,
Makrolon and glass.
Preferably, the thickness of the piezoelectric layer is in the range of 5 microns to 20 microns.
Preferably, at least one ultrasonic transducer formation array.
Ultrasonic sensor according to embodiments of the present invention, stacks ultrasonic transducer on cmos circuit, thus need not
Different tube cores are connected using eutectic bonding, thus reduces manufacturing cost and improves yield rate.Due in same tube core
Middle integrated CMOS circuit and ultrasonic transducer, therefore scanning recognition speed can be improved.
In the method, using organic piezopolymer formation piezoelectric layer, so as to simplify manufacturing process, reduce cost
With raising yield.
Brief description of the drawings
By description referring to the drawings to the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings：
Fig. 1 a to 1c show the operation principle of ultrasonic sensor；
Fig. 2 shows the decomposition diagram of ultrasonic sensor；
Fig. 3 shows the flow chart of ultrasonic sensor manufacture method according to a first embodiment of the present invention；
Fig. 4 a to 4h show cutting for the different phase of ultrasonic sensor manufacture method according to a first embodiment of the present invention
Face figure；
Fig. 5 a and 5b show a part of stage of ultrasonic sensor manufacture method according to a second embodiment of the present invention
Sectional view.
Fig. 6 a to 6f show a part of stage of ultrasonic sensor manufacture method according to a third embodiment of the present invention
Sectional view.
Embodiment
The present invention is more fully described hereinafter with reference to accompanying drawing.In various figures, identical element is using similar attached
Icon is remembered to represent.For the sake of clarity, the various pieces in accompanying drawing are not necessarily to scale.Furthermore, it is possible to not shown some
Known part.
It describe hereinafter many specific details of the present invention, structure, material, size, the processing work of such as device
Skill and technology, to be more clearly understood that the present invention.But just as the skilled person will understand, it can not press
The present invention is realized according to these specific details.
The present invention can be presented in a variety of manners, some of examples explained below.
Fig. 1 a to 1c show the operation principle of ultrasonic sensor.Ultrasonic sensor 100 includes the cmos circuit stacked
110th, ultrasonic transducer 120, pressing plate 130.Cmos circuit 110 is connected with ultrasonic transducer 120, for driving ultrasonic waves
Can device 120 and the detection signal of the processing generation of ultrasonic transducer 120.Pressing plate 130 provides surface and the protection that finger is touched
Ultrasonic transducer 120.
As shown in Figure 1a, in working condition, finger touches the surface of pressing plate 130.In alternate embodiments, finger can
Directly to touch the surface of ultrasonic transducer 120, so as to save pressing plate 130.
As shown in Figure 1 b, cmos circuit 110 provides pumping signal, and pumping signal is sent to ultrasonic transducer 120, ultrasound
Wave transducer 120 launches ultrasonic signal 180.The ultrasonic signal 180 reaches the surface of pressing plate 130, further to finger
Surface.The fingerprint of finger surface is supracutaneous projection lines, including the high and steep and recessed line valley of raised line.
As illustrated in figure 1 c, ultrasonic wave 180 be sent to pressing plate 130 contact finger surface absorbed, reflected, wherein, with
Some positions (such as the line valley in finger) of the finger surface of the pressing plate 130 of air contact, most of ultrasonic wave is reflected.It is super
Acoustic wave transducer 120 receives the ultrasonic signal 190 of reflection, so as to produce detection signal.The detection signal is sent to CMOS letters
Number process circuit is analyzed and processed, it is hereby achieved that the projected state of finger surface.In this embodiment, ultrasonic wave transducer
Device more than 120 is arranged in the transducer unit 1201 of array, thus can obtain the fingerprint projected state of multiple positions, forms phase
Answer the fingerprint pattern in region.
In ultrasonic wave launching phase, cmos circuit 110 provides generation one or more ultrasonic signal in the process
Clock signal, be used as pumping signal.Ultrasonic transducer 120 for example including piezoelectric layer, applies in the both side surface of piezoelectric layer
Pumping signal so that mechanical deformation occurs for piezoelectric layer, so as to produce ultrasonic wave 180.This ultrasonic wave is sent to knowledge by pressing plate 130
Other object, such as finger or palm.The non-detected object of described ultrasonic wave absorbs or the part of transmitting can be reflected, and is formed
Reflectance ultrasound ripple 190, ultrasonic transducer 120 is sent back through pressing plate 130.Stage, ultrasonic transducer are received in ultrasonic wave
Reflectance ultrasound ripple 190 is converted to partial charge by 120, forms detection signal.The detection signal is sent to cmos circuit, CMOS electricity
Road analyzes and processes signal, and the fingerprint pattern of finger surface is recognized according to signal construction, makes discriminating action.
The ultrasonic sensor can be not only used for fingerprint sensor, and can be used for palmprint sensor.
Fig. 2 shows the decomposition diagram of ultrasonic sensor.Ultrasonic sensor 100 includes pressing plate 130, the ultrasound stacked
Wave transducer 120, cmos circuit 110.
Pressing plate 130 provides surface and the protection ultrasonic transducer 120 that finger is touched.Further, pressing plate 130 should
There is good acoustic characteristic, to reduce loss when ultrasonic wave is transmitted in pressing plate 130.For example, pressing plate 130 can be in acoustics
On be coupled to any material of ultrasonic transducer 120, such as plastics, ceramics, sapphire, metal, alloy, makrolon and glass
Glass.In certain embodiments, pressing plate 130 is, for example, sheet glass.In further embodiments, pressing plate 130 is, for example, aluminium or stainless
Steel.
Ultrasonic transducer 120 includes the multiple transducer units 1201 for being arranged in array.The multiple transducer unit
1201 can include public piezoelectric layer, and respectively positioned at piezoelectric layer lower surface and upper surface respective first electrode and
Second electrode, so as to form laminated construction.
First electrode and second electrode can be made up of conductive material, including conductive metal material and radio frequency material
Material.Conductive metal material is, for example, Al, Al-Si alloy, Cu, Ni-Cu, Au, Cr-Au, Pt-AU, Cr-Al, CrCu, Ag.Non- gold
It is, for example, conductive oxide, conductive ink or conducting resinl to belong to conductive material.Conductive oxide is, for example, tin indium oxide (ITO).Lead
Electric ink is, for example, silver system ink.Conducting resinl is, for example, the epoxy resin of silver system, polyurethanes.
Piezoelectric layer is made up of piezopolymer.In this embodiment, piezopolymer meets appropriate acoustic properties, for example
Acoustic resistance between 2.5MRayl~5MRayl, such as PVDF (polyvinylidene fluoride), PVDF-TrFe (polyvinylidene fluoride-three
PVF), PTFE (polytetrafluoroethylene (PTFE)), PVDC (polyvinylide pie), DIPAB (bromination diisopropylamine).PVDF copolymers
Example includes mol ratio 60:40 PVDF-TrFe, 70:30PVDF-TrFe、80:20PVDF-TrFe、90:10PVDF-TrFe.
Cmos circuit 110 includes multiple circuit units, respectively with the contact being connected with corresponding transducer unit
1101 and corresponding amplifier 1102.Amplifier 1102 is for example made up of multiple transistors.Preferably, cmos circuit 110 may be used also
Including analog-digital converter 1103, to be connected with the output end of amplifier 1102, so that detection signal is converted into data signal.
The manufacturing process for the cmos circuit that ultrasonic transducer 120 is electrically connected is known, is not described in detail herein.
Fig. 3 shows the flow chart of ultrasonic sensor manufacture method according to a first embodiment of the present invention, and Fig. 4 a to 4h show
Go out the sectional view of the different phase of this method.Illustrate the reality of the manufacture method of ultrasonic sensor below in conjunction with Fig. 3, Fig. 4 a to 4h
Example.For the sake of clarity, two transistors of cmos circuit 110 are only shown in figure, and one of ultrasonic transducer 120
Transducer unit.It should be appreciated that can form multiple transistors to form multiple amplifiers, and shape simultaneously in a tube core
Into multiple transducer units and arrangement form array.
In step slo, the cmos circuit for signal processing circuit is formed.
The cmos circuit is for example including multiple transistors at least a portion formation in the substrate 101, and described many
The first interlayer dielectric layer 106, the first wiring layer 107, the second interlayer dielectric layer 108 and second stacked gradually above individual transistor
Wiring layer 109.As an example, showing only one P-type transistor and only one N-type transistor in Fig. 4 a.In P type substrate
N-type well region 102 is formed in 101.Then, the source/drain region 103 of P-type transistor is formed in N-type well region 102.In P type substrate 101
The middle source/drain region 104 for forming N-type transistor.The grid electricity stacked gradually is formed in P type substrate 101 and N-type well region 102 to be situated between
Matter 111 and grid conductor 105.In P-type transistor, between grid conductor 105 and N-type well region 102 by gate-dielectric 111 every
Open, grid conductor 105 is extended laterally between adjacent source/drain region so that N-type well region 102 is located at the lower section of grid conductor 105
A part is used as channel region.In N-type transistor, between grid conductor 105 and P type substrate 101 by gate-dielectric 111 every
Open, grid conductor 105 is extended laterally between adjacent source/drain region so that P type substrate 101 is located at the lower section of grid conductor 105
A part is used as channel region.The source/drain region 103 of P-type transistor and the source/drain region 104 of N-type transistor and grid conductor 105
It can be electrically connected via conductive channel with any one in the first wiring layer 107 and the second wiring layer 109.
In alternate embodiments, the transistor in cmos circuit 110 is not limited to two, but can include at least one
Interlayer dielectric layer in transistor, cmos circuit 110 can include at least one interlayer dielectric layer not only in two,
Wiring layer in cmos circuit 110 is not limited to two, but can include at least one wiring layer.
Technique for forming cmos circuit 110 is known, be will not be described in detail herein.
In step S20, ultrasonic transducer 120 is formed on cmos circuit 110.Step is shown in Fig. 4 a-4g
S20 more detailed step.
As shown in fig. 4 a, insulating barrier 121 is formed on interlayer dielectric layer 108, and carries out patterning to form opening
151.Insulating barrier 121 selected from any material of silica, silicon nitride for example by constituting.It is for instance possible to use plasma increases
Extensive chemical vapour deposition (PE-CVD) formation silicon oxide layer is used as the insulating barrier.The thickness of insulating barrier 121 be, for example, 0.2 micron extremely
1 micron.
In this step, using including gluing, exposed and developed photoetching process, photoresist mask is formed.Via photoetching
Glue mask is etched, and insulating barrier 121 is patterned, so as to form opening 151 and 152 in insulating barrier 121.The etching is for example
Can be the wet etching process using etching solution, or the dry method etch technology carried out in the reactor chamber, for example wait from
Daughter is etched.After the etching, photoresist mask is removed by dissolving or being ashed in a solvent.
After patterning, opening 151 and 152 exposes at least a portion of the second wiring layer 109 in cmos circuit 110
Surface.
Further, as shown in Figure 4 b, in the formation conductive layer of insulating barrier 121, and patterned, so as to form first
Electrode 122 and first contacts 122A, so as to form the first semiconductor structure.
In this step, the technique for forming conductive layer is, for example, evaporation.The conductive layer is for example made up of Ag, and thickness is about
For 0.1 micron to 1 micron.Using above-mentioned photoetching and etch process, by the conductive layer pattern.
In the first semiconductor structure, a part for conductive layer, which is located on insulating barrier 121, forms first electrode 122, another
It is partially filled with opening 151 and forms the first contact 122A.First contact 122A passes through insulating barrier 121, and first electrode 122 is connected to
Second wiring layer 109.A part of surface of insulating barrier 121 and opening 152 are not affected by blocking for first electrode 122.Therefore, open
Mouth 152 exposes at least a portion surface of the second wiring layers 109, for the electrical connection of the electrode subsequently formed.
Alternatively, the contact of first electrode 122 and first 122A can be constituted due to arbitrary conductive material, including metal is led
Electric material and non-metallic conducting material.Conductive metal material is, for example, Al, Al-Si alloy, Cu, Ni-Cu, Au, Cr-Au, Pt-
AU、CrAl、CrCu、Ag.Non-metallic conducting material is, for example, conductive oxide, conductive ink or conducting resinl.Conductive oxide example
Such as it is tin indium oxide (ITO).Conductive ink is, for example, silver system ink.Conducting resinl is, for example, the epoxy resin of silver system, poly- amino first
Acid esters.
Alternatively, the step of patterned conductive layer can use and peel off (Lift-off) technique, wherein, forming conductive layer
Before, using photoetching process formation photoresist mask, after conductive layer is formed, remove and lead while photoresist mask is removed
The part of electric layer, so that by conductive layer pattern.
Further, as illustrated in fig. 4 c, piezoelectric layer 123 is formed on the surface of the first semiconductor structure.Piezoelectric layer 123 is not
The only exposed surface of covering first electrode 122 and insulating barrier 121, an and part for piezoelectric layer 123 also fills up opening 152.
In this embodiment, the piezoelectric layer 123 is, for example, organic PVDF (segregation PVF) glue-line, and thickness is, for example, 5 micro-
Rice is to 20 microns.For forming the technique of piezoelectric layer 123 for example including making at mixed liquor, spin coating, baking, crystallization and polarization
Reason.
Mixed liquor is the organic gluey mixed liquor for carrying out high-speed stirred formation in solvent by the way that organic dust is added to.Example
Such as, using agitator with 2000 rpms of stirring several times 10 minutes.In one embodiment, the mixed liquor includes 75-
The PVDF (segregation PVF) of 25% molal weight, the organic solvent of use is 20% 2- butanone solutions.
Alternatively, piezopolymer can be made up of arbitrary piezopolymer, it is thus only necessary to meet appropriate acoustics
Matter, such as acoustic resistance between 2.5MRayl~5MRayl.Piezopolymer includes but is not limited to PVDF and (gathers inclined difluoro second
Alkene), PVDF-TrFe (polyvinylidene fluoride-trifluoro-ethylene), PTFE (polytetrafluoroethylene (PTFE)), PVDC (polyvinylide pie),
DIPAB (bromination diisopropylamine).In an example, the organic dust being added in solvent is PVDF-TrFe (segregation fluorine second
Alkene-trifluoro-ethylene).The example of PVDF copolymers includes mol ratio 60:40 PVDF-TrFe, 70:30PVDF-TrFe、80:
20PVDF-TrFe、90:10PVDF-TrFe。
Then, mixed liquor is coated on the surface of the first semiconductor structure, be then placed within sol evenning machine, using spin coating
Method film forming.In spin coating, rotating speed is, for example, 35000 rpms, and the time is, for example, 45 seconds., can by controlling rotating speed and time
To form film in uniform thickness on the first semicon-ductor structure surface and control its thickness.
In alternate embodiments, spraying process or the tape casting film forming can be used.In spraying process, using flush coater
The liquid film of mixed liquor is formed on the surface of semiconductor structure, the flow of mixed liquor is, for example, 5 milliliters per minute, the movement of nozzle
Speed is, for example, 120 millimeters per paper money.
Then, the first semiconductor structure is placed and dried in an oven, to remove organic solvent, so as to obtain organic
PVDF (segregation PVF) glue-line.In drying, the vacuum in baking oven is, for example, 100Torr, and temperature is, for example, 50 degrees Celsius,
Time is, for example, 10 minutes.
Then, Crystallizing treatment is carried out to organic PVDF (segregation PVF) glue-line.Organic PVDF (segregation PVF) glue-line
Crystallization temperature be 135 degrees Celsius of (curie point)~160 degree Celsius (fusing point).It is preferred that temperature be 140 degrees Celsius.Crystallization time
For example, 1 hour.After crystallization, organic PVDF (segregation PVF) glue-line is, for example, α crystalline phases.
Then, polarization process is carried out to organic PVDF (segregation PVF) glue-line, by organic PVDF (segregation PVF) glue
Layer is converted to β crystalline phases from α crystalline phases.In polarization process, for example with high electric field polarization method, electric-field intensity is greater than being equal to
100 volts every micron, the polarization time need to be more than 3 minutes.Preferably, electric-field intensity is, for example, 100 volts every micron, polarization time
For example, 5 minutes.
In alternate embodiments, it can be carried out using axial tension, addition nano particle method or synthesis at polarization
Reason.For example, in axial tension method, affecting parameters have stretch ratio, draft temperature, rate of extension, heat treatment etc..Received in addition
In rice grain method, suitable nano particle is selected to improve β crystal contents, nano particle is, for example, CNT or oxygen reduction
Graphite alkene.In synthesis, for example, add nano particle while axial tension.
In a preferred embodiment, before polarization process, formed on the surface of organic PVDF (segregation PVF) glue-line
Metal level, such as silver layer.During polarization process, the adhesion between metal level and organic PVDF (segregation PVF) glue-line increases
By force, so as to improving the breakdown voltage of ultrasonic transducer.
Further, as shown in figure 4d, insulating barrier is formed on piezoelectric layer 123, and is patterned to form opening
153, so as to form mask layer 124.Mask layer 124 is for example by selected from Al2O3、TiO2、ZnO、ZrO2And Ta2O5Any of group
Into.In this embodiment, mask layer 124 is for example by Al2O3Formed, thickness is, for example, 10 angstroms to 100 angstroms.
In this step, the technique for forming mask layer 124 is, for example, ald (ALD).In the implementation of replacement
In example, the technique of mask layer 124 can be any suitable low temperature deposition process, such as evaporation, sputtering.
Then, using including gluing, exposed and developed photoetching process, photoresist mask is formed.Via photoresist mask
It is etched, by patterning insulating layers, so as to form opening 153 in a insulating layer.The etching for example can be molten using etching
The wet etching process of liquid, or the dry method etch technology carried out in the reactor chamber, such as plasma etching.In etching
Afterwards, photoresist mask is removed by dissolving or being ashed in a solvent.
After patterning, the position of opening 153 is corresponding with the position of the opening 152 shown in Fig. 4 a, so that exposure pressure
At least a portion surface of electric layer 123.
Further, as shown in fig 4e, the expose portion of piezoelectric layer 123 is etched via the opening 153 in mask layer 124,
So as to form the through hole 154 for reaching the second wiring layer 109 in piezoelectric layer 123.
The step is for example with dry etching, and etchant is, for example, oxygen.Because mask layer 124 is relative to piezoelectric layer 123
Corrosion resistance, therefore, the location and shape of the through hole 154 formed in piezoelectric layer 123 and the opening 153 in mask layer 124 are big
Cause correspondence.
Then, mask layer 124 is removed relative to piezoelectric layer 123 for example with wet etching.
Further, as shown in fig. 4f, conductive layer is formed on piezoelectric layer 123, and is patterned, so as to form
Two electrodes 126 and the second contact 126A, so as to form the second semiconductor structure.
In this step, the technique for forming conductive layer is, for example, evaporation.The conductive layer is for example made up of Ag, and thickness is about
For 0.5 micron to 2 microns.Using above-mentioned photoetching and etch process, by the conductive layer pattern.
In the second semiconductor structure, a part for conductive layer, which is located on piezoelectric layer 123, forms second electrode 126, another
It is partially filled with opening 154 and forms the second contact 126A.Second contact 126A passes through piezoelectric layer 123, and second electrode 126 is connected to
Second wiring layer 109.
Alternatively, the contact of second electrode 126 and second 126A can be constituted due to arbitrary conductive material, including metal is led
Electric material and non-metallic conducting material.Conductive metal material is, for example, Al, Al-Si alloy, Cu, Ni-Cu, Au, Cr-Au, Pt-
AU、CrAl、CrCu、Ag.Non-metallic conducting material is, for example, conductive oxide, conductive ink or conducting resinl.Conductive oxide example
Such as it is tin indium oxide (ITO).Conductive ink is, for example, silver system ink.Conducting resinl is, for example, the epoxy resin of silver system, poly- amino first
Acid esters.
Alternatively, the step of patterned conductive layer can use and peel off (Lift-off) technique, wherein, forming conductive layer
Before, using photoetching process formation photoresist mask, after conductive layer is formed, remove and lead while photoresist mask is removed
The part of electric layer, so that by conductive layer pattern.
Further, as shown in figure 4g, for example by deposition, form passivation layer 127 to cover the second semiconductor structure
Surface, i.e. piezoelectric layer 123 and the exposed surface of second electrode 126, so as to form ultrasonic transducer 120.
In this embodiment, passivation layer 127 is for example made up of Parylene (parylene), and thickness is, for example, 0.5 micro-
Rice is to 10 microns.
In this step, the technique for forming passivation layer 127 is, for example, chemical vapor deposition (CVD).In the reality of replacement
Apply in example, passivation layer can be arbitrary insulating barrier, including but not limited to organic film, oxide or nitride.Organic film
It can be made up of any in Parylene, polyimides, SU-8.Oxide can be selected from Al2O3、ZrO2、
HfO2、SiO2Any of.Nitride can be Si3N4.Technique for forming organic film for example can be chemical gaseous phase
Any of deposition, spin coating, spraying.Technique for forming sull can be any of sputtering, thermal oxide.
Technique for forming nitride can be sputtering.
In step s 30, pressing plate 132 is bonded on ultrasonic transducer 120.Step S30 is shown in Fig. 4 h more
Detailed step.
In this step, adhesive linkage 131 is formed on the passivation layer 127 of ultrasonic transducer 120, then in adhesive linkage
Pressing plate 132 is placed on 131.
Adhesive linkage 131 is relatively thin, with uniform thickness.Can be comprising any appropriate with reference to ultrasonic transducer layer
Engaging process, such as vacuum engagement, hot press lamination, cold pressing lamination, contact engagement or other adhesive bonding processes.Liquid
The example of adhesive application procedures comprising apply match somebody with somebody, screen printing, stencil, punching press, intaglio printing, plane-of-weakness joint type coating, spraying, brush
Painting, roller, drum cutter painting are covered.Need to avoid acoustics heterogeneity in engaging process, such as bubble, avoid microscopic spaces, striped, office
The phenomenon such as part layer, bubble, pleat, residue, particle, material be uneven.
A kind of selectable adhesive can be epoxy resin, cyanopropionic acid ester, silicone, polyurethanes, thermoplastic thing, bullet
Property adhesive, hot setting adhesive, UV cured adhesives, hot setting adhesive, heat melt adhesive, phenolic resin, acrylic acid
Resin, acrylate, polyamide, contact adhesive and pressure-sensitive adhesive.
Preferably adhesive linkage 131 is anisotropic-electroconductive adhesive (ACA).It may also be anisotropic conductive film (ACF)
Anisotropic conductive agent, anisotropic conductive film are conductive in a thickness direction, insulate in the horizontal direction.
Relatively thin, the adhesive with certain insulating properties, such as three ethoxy silane (APTES) can also be used in adhesive linkage 131.
APTES is liquid under normal temperature, pressure, and can the ratio of about 1 to 50 volume be dissolved in water or acetone.It can select and close
Suitable process coats APTES layers to CMOS surfaces, such as dip-coating, spin coating, spraying.Also evaporation or vacuum-deposited side may be selected
Formula.
In adhesion process, organic piezoelectric layer need to keep cooling, make its be constantly in Curie temperature (135 degrees Celsius) with
Under.
Pressing plate 132 can for any material of ultrasonic transducer can be acoustically coupled to, such as plastics, ceramics, sapphire,
Metal, alloy, makrolon and glass.In certain embodiments, pressing plate 132 can be certain protection device, such as sheet glass.
In other embodiments, pressing plate 132 can be aluminium, stainless steel etc..
In the above-described embodiment, the first electrode and second electrode of ultrasonic transducer 120 are described respectively via
One contact and the second contact are connected to the second wiring layer of cmos circuit 110.In alternate embodiments, cmos circuit 110 is wrapped
More wiring layers are included, the first electrode and second electrode of ultrasonic transducer 120 can be respectively via the first contact and second
Contact is connected to any one identical wiring layer of cmos circuit 110, or the different wiring layer of any two.Further,
The first electrode and second electrode of ultrasonic transducer 120 are connected to the transistor of cmos circuit 110 via selected wiring layer.
Fig. 5 a and 5b show a part of stage of ultrasonic sensor manufacture method according to a second embodiment of the present invention
Sectional view.In a second embodiment, the first electrode 122 of ultrasonic transducer 120 is connected to via the upper surface of piezoelectric layer 123
Second wiring layer 109.
In the method, after the step of Fig. 4 a to 4d, the step shown in alternate figures 4e and 4f further performs Fig. 5 a
With the step shown in 5b.It should be noted that in the method for second embodiment, the first electrode 122 of ultrasonic transducer 120 not with
First contact 122A is formed simultaneously.Second electrode 122 and opening 151 are spaced a predetermined distance from.
Further, as shown in Figure 5 a, the expose portion of piezoelectric layer 123 is etched via the opening 153 in mask layer 124,
So as to form the through hole 154 and 155 for reaching the second wiring layer 109 in piezoelectric layer 123, and reach the logical of first electrode 122
Hole 156.
The step is for example with dry etching, and etchant is, for example, oxygen.Because mask layer 124 is relative to piezoelectric layer 123
Corrosion resistance, therefore, location and shape and the opening 152 of the through hole 154 formed in piezoelectric layer 123 are generally corresponding to, through hole 155
Location and shape be generally corresponding to opening 151, respectively expose the second wiring layer 109 at least a portion surface.In piezoelectric layer
The opening 156 formed in 123 exposes at least a portion surface of first electrode 122.
Then, mask layer 124 is removed relative to piezoelectric layer 123 for example with wet etching.
Further, as shown in Figure 5 b, conductive layer is formed on piezoelectric layer 123, and is patterned, so as to form
Two electrodes 126 and the first contact 122A, the second contact 126A, so as to form the second semiconductor structure.
In this step, the technique for forming conductive layer is, for example, evaporation.The conductive layer is for example made up of Ag, and thickness is about
For 0.5 micron to 2 microns.Using above-mentioned photoetching and etch process, by the conductive layer pattern.
In the second semiconductor structure, the Part I of conductive layer extends and filling opening 155 on the surface of piezoelectric layer 123
First is formed with 156 and contacts 122A, and Part II, which is located on piezoelectric layer 123, forms second electrode 126, Part III filling opening
154, which form second, contacts 126A.First contact 122A passes through piezoelectric layer 123, and first electrode 122 is connected into piezoelectric layer 123
The upper surface that then upper surface again passes through piezoelectric layer 123 from piezoelectric layer 123 is connected to the second wiring layer 109.Second contact
126A passes through piezoelectric layer 123, and second electrode 126 is connected into the second wiring layer 109.
Alternatively, the contact of second electrode 126 and first 122A, the second contact 126A can be due to arbitrary conductive material groups
Into, including conductive metal material and non-metallic conducting material.Conductive metal material be, for example, Al, Al-Si alloy, Cu, Ni-Cu,
Au、Cr-Au、Pt-AU、CrAl、CrCu、Ag.Non-metallic conducting material is, for example, conductive oxide, conductive ink or conducting resinl.
Conductive oxide is, for example, tin indium oxide (ITO).Conductive ink is, for example, silver system ink.Conducting resinl is, for example, the asphalt mixtures modified by epoxy resin of silver system
Fat, polyurethanes.
Alternatively, the step of patterned conductive layer can use and peel off (Lift-off) technique, wherein, forming conductive layer
Before, using photoetching process formation photoresist mask, after conductive layer is formed, remove and lead while photoresist mask is removed
The part of electric layer, so that by conductive layer pattern.
Further, the step shown in Fig. 4 g and 4h is continued executing with, so as to form the remainder of ultrasonic sensor.
Fig. 6 a to 6f show a part of stage of ultrasonic sensor manufacture method according to a third embodiment of the present invention
Sectional view.In the third embodiment, it is viscous using anisotropic conductive after the laminated piezoelectric of ultrasonic transducer 120 is formed
Laminated piezoelectric is adhered on cmos circuit 110 by mixture.
In the method, the step shown in alternate figures 4a and 4f, performs the step shown in Fig. 6 a and 6f.
As shown in Figure 6 a, piezoelectric layer 123 is formed.In subsequent steps, the piezoelectric layer 123 itself can be used as support
Layer.
In this embodiment, the piezoelectric layer 123 is, for example, organic PVDF (segregation PVF) film, and thickness is, for example, 5 micro-
Rice is to 20 microns.For forming the technique of piezoelectric layer 123 for example including making at mixed liquor, spin coating, baking, crystallization and polarization
Reason.
In the method according to 3rd embodiment, the technique for forming piezoelectric layer is identical with first embodiment, herein not
It is described in detail again.
Further, as shown in Figure 6 b, formed and led on the first surface (for example, lower surface in figure) of piezoelectric layer 123
Electric layer, and patterned, so that first electrode 122 and pad 126B are formed, so as to form the first semiconductor structure.First
Electrode 122 and pad 126B are spaced apart.126B is padded by for the electrical connection of the second electrode subsequently formed.
In the method according to 3rd embodiment, technique and first embodiment phase for forming first electrode and pad
Together, it will not be described in detail herein.
Further, as fig. 6 c, form exhausted on the second surface (for example, upper surface in figure) of piezoelectric layer 123
Edge layer, and opening 153 is patterned to form, so as to form mask layer 124.The shape and position and pad of opening 153
126B is generally corresponding to.Mask layer 124 is for example by selected from Al2O3、TiO2、ZnO、ZrO2And Ta2O5Any of composition.In the reality
Apply in example, mask layer 124 is for example by Al2O3Formed, thickness is, for example, 10 angstroms to 100 angstroms.
In the method according to 3rd embodiment, the technique for forming mask layer is identical with first embodiment, herein not
It is described in detail again.
Further, as shown in fig 6d, the expose portion of piezoelectric layer 123 is etched via the opening 153 in mask layer 124,
So as to form the through hole 154 for reaching pad 126B in piezoelectric layer 123.
In the method according to 3rd embodiment, the technique for forming through hole is identical with first embodiment, herein no longer
It is described in detail.
Enter a ground, as shown in fig 6e, conductive layer is formed on piezoelectric layer 123, and patterned, so as to form second
Electrode 126 and second contacts 126A, so as to form the second semiconductor structure.Second semiconductor structure is first electrode 122, pressure
The laminated piezoelectric that electric layer 123 and second electrode 126 are constituted.
In the second semiconductor structure, a part for conductive layer, which is located on piezoelectric layer 123, forms second electrode 126, another
It is partially filled with opening 154 and forms the second contact 126A.Second contact 126A passes through piezoelectric layer 123, and second electrode 126 is connected to
Pad 126B.
In the method according to 3rd embodiment, technique and first embodiment for forming second electrode and the second contact
It is identical, it will not be described in detail herein.
Further, as shown in Figure 6 f, using anisotropic-electroconductive adhesive, conductive laminate is adhered to cmos circuit
On 110.Anisotropic-electroconductive adhesive formation adhesive linkage 128, positioned at the first surface and cmos circuit 110 of piezoelectric layer 123
The second interlayer dielectric layer 108 between.
Anisotropic-electroconductive adhesive is conductive in a thickness direction, insulate in the horizontal direction.Therefore, adhesive linkage 128 is not
It is only used for conductive laminate being bonded on cmos circuit 110, and realizes first electrode 122 and pad 126B and the second wiring layer
Electrical connection between 109.First electrode 122 is connected to the second wiring layer 109 via adhesive linkage 128, and second electrode 126 is via
Two contact 126A, pad 126B and adhesive linkage 128 are connected to the second wiring layer.Further, the first of ultrasonic transducer 120
Electrode and second electrode are connected to the transistor of cmos circuit 110 via selected wiring layer.
Further, the step shown in Fig. 4 g and 4h is continued executing with, so as to form the remainder of ultrasonic sensor.
In terms of the manufacturing, the ultrasonic sensor manufacture method is compatible with CMOS technology, can be straight in CMOS fabrication line
Connect processing.In terms of ultrasonic transducer subsequent applications, ultrasonic sensor subsequent movement terminal application field without
Perforate on the media such as glass, can penetrate the media such as glass and directly apply, reduce follow-up application cost.In terminal applies side
Face, compared with capacitive fingerprint sensing device, the ultrasonic signal of ultrasonic sensor is influenceed small by greasy dirt, sweat etc., by temperature
Small, the high accuracy for examination of identification is influenceed with humidity.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Also there is other identical element in process, method, article or equipment including the key element.
According to embodiments of the invention as described above, these embodiments do not have all details of detailed descriptionthe, not yet
It is only described specific embodiment to limit the invention.Obviously, as described above, it can make many modifications and variations.This explanation
Book is chosen and specifically describes these embodiments, is in order to preferably explain the principle and practical application of the present invention, so that affiliated
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its four corner and equivalent.
Claims (42)
1. a kind of method for manufacturing ultrasonic sensor, including：
Form cmos circuit；And
At least one ultrasonic transducer, the cmos circuit and at least one described ultrasonic wave are formed on the cmos circuit
Transducer is connected, for driving at least one described ultrasonic transducer and at least one described ultrasonic transducer of processing to produce
Detection signal,
Wherein, the step of forming at least one ultrasonic transducer includes：
Laminated piezoelectric is formed, the laminated piezoelectric includes piezoelectric layer, and respectively positioned at the first surface of the piezoelectric layer and the
First electrode and second electrode on two surfaces, the first surface and the second surface are relative to each other；And
The electrical connection formed between the laminated piezoelectric and the cmos circuit,
Wherein, the piezoelectric layer is made up of organic piezopolymer.
2. the method described in as requested 1, wherein, organic piezopolymer is included selected from polyvinylidene fluoride, poly- inclined two
At least one of PVF-trifluoro-ethylene, polytetrafluoroethylene (PTFE), polyvinylide pie, bromination diisopropylamine.
3. according to the method described in claim 1, wherein, the step of forming laminated piezoelectric includes forming described using following steps
Piezoelectric layer：
Make mixed solution；
Apply mixed solution film forming；And
Drying forms organic glue-line,
Wherein, organic glue-line is used as the piezoelectric layer.
4. method according to claim 3, wherein, after organic glue-line is formed, in addition to perform following steps at least
One of：
Crystallizing treatment is carried out to organic glue-line；And
Polarization process is carried out to organic glue-line.
5. method according to claim 4, wherein, include the step of Crystallizing treatment：
Predetermined temperature between the curie point and fusing point of organic glue-line heats predetermined crystallization time.
6. method according to claim 2, wherein, the step of forming cmos circuit includes：
At least one transistor is formed on substrate；And
Multiple wiring layers and multiple interlayer dielectric layers are formed at least one described transistor,
Wherein, the multiple wiring layer is separated into multiple different aspects by the multiple interlayer dielectric layer.
7. method according to claim 6, wherein, the electrical connection formed between the laminated piezoelectric and the cmos circuit
The step of include：
Insulating barrier is formed on the cmos circuit；
The first opening for arriving separately at least one wiring layer in the multiple wiring layer and the are formed in the insulating barrier
Two openings；
Form the first contact that the first electrode is connected to at least one wiring layer through the described first opening；And
Formed to be open through the piezoelectric layer and described second and the second electrode is connected at least one wiring layer
Second contact.
8. method according to claim 7, wherein, second contact is spaced apart with the first electrode.
9. method according to claim 7, wherein, first contact is formed when forming the first electrode, it is described
First contact filling, first opening.
10. method according to claim 7, wherein, before the second electrode is formed, in addition to formed through described
Piezoelectric layer and first opening reach the first through hole of at least one wiring layer, reach described the through the piezoelectric layer
The third through-hole of one electrode, forms first contact when forming the second electrode, first contact is in the piezoelectricity
Layer surface extends and fills the first through hole and the third through-hole, thus be by the first electrode be connected to it is described at least
One wiring layer.
11. method according to claim 10, wherein, before the second electrode is formed, in addition to formed through institute
State piezoelectric layer and second opening reaches the second through hole of at least one wiring layer, the shape when forming the second electrode
Into the described second contact, the second contact filling second through hole.
12. method according to claim 11, wherein, the step of forming first to third through-hole includes：
Mask layer is formed on the piezoelectric layer；
The the 3rd to the 5th is formed in the masking layer to be open；
Via piezoelectric layer described in the 3rd to the 5th opening etching；And
Remove the mask layer.
13. method according to claim 12, wherein, the mask layer includes being selected from Al2O3、TiO2、ZnO、ZrO2With
Ta2O5It is any.
14. method according to claim 13, wherein, it is described to be etched to dry etching, etchant is used as using oxygen.
15. method according to claim 6, wherein, form being electrically connected between the laminated piezoelectric and the cmos circuit
The step of connecing includes：
Pad is formed on the first surface；
Form the second contact that the pad is connected to through the piezoelectric layer and by the second electrode；And
The laminated piezoelectric is adhered on the cmos circuit using the first adhesive linkage,
Wherein, first adhesive linkage is made up of anisotropic-electroconductive adhesive, positioned at the first electrode and described at least one
Between individual wiring layer, and between the pad and at least one described wiring layer,
The first electrode is connected at least one described wiring layer via first adhesive linkage,
The second electrode is connected at least one described cloth via the described second contact, the pad and first adhesive linkage
Line layer.
16. method according to claim 15, wherein, the pad is spaced apart with the first electrode.
17. method according to claim 15, wherein, before the second electrode is formed, in addition to formed through institute
The second through hole that piezoelectric layer reaches the pad is stated, second contact, described second are formed when forming the second electrode
Contact filling second through hole.
18. method according to claim 17, wherein, the step of forming the second through hole includes：
Mask layer is formed on the piezoelectric layer；
The 4th is formed in the masking layer to be open；
Via piezoelectric layer described in the 4th opening etching；And
Remove the mask layer.
19. method according to claim 18, wherein, the mask layer includes being selected from Al2O3、TiO2、ZnO、ZrO2With
Ta2O5It is any.
20. method according to claim 18, wherein, it is described to be etched to dry etching, etchant is used as using oxygen.
21. according to the method described in claim 1, in addition to：
Passivation layer is formed on the laminated piezoelectric.
22. method according to claim 21, wherein, the passivation layer selected from any of following material by constituting：It is poly-
Paraxylene, polyimides, SU-8, Al2O3、ZrO2、HfO2、SiO2And Si3N4。
23. method according to claim 21, in addition to：
The second adhesive linkage is formed on the passivation layer；And
Pressing plate is formed on second adhesive linkage.
24. method according to claim 23, wherein, the pressing plate selected from any of following material by constituting：Plastics,
Ceramics, sapphire, metal, alloy, makrolon and glass.
25. a kind of ultrasonic sensor, including：
Cmos circuit；And
At least one ultrasonic transducer,
Wherein, the cmos circuit is connected with least one described ultrasonic transducer, for driving at least one described ultrasound
The detection signal that wave transducer and at least one described ultrasonic transducer of processing are produced,
Wherein, at least one described ultrasonic transducer includes：
Laminated piezoelectric, the laminated piezoelectric includes piezoelectric layer, and is located at the first surface and the second table of the piezoelectric layer respectively
First electrode and second electrode on face, the first surface are relative to each other with the second surface,
Wherein, electrically connected between the laminated piezoelectric and the cmos circuit, the piezoelectric layer is made up of organic piezopolymer.
26. ultrasonic sensor according to claim 25, wherein, organic piezopolymer is included selected from poly- inclined two
At least one in PVF, polyvinylidene fluoride-trifluoro-ethylene, polytetrafluoroethylene (PTFE), polyvinylide pie, bromination diisopropylamine
Kind.
27. ultrasonic sensor according to claim 26, wherein, it is poly- in the polyvinylidene fluoride-trifluoro-ethylene
The mol ratio of vinylidene fluoride and trifluoro-ethylene is 60:40 to 90:In the range of 10.
28. ultrasonic sensor according to claim 26, wherein, the piezoelectric layer has by crystallization and polarization at least
One of processing after crystalline phase.
29. ultrasonic sensor according to claim 28, in addition to it is covered in the metal level of the piezoelectric layer surface.
30. ultrasonic sensor according to claim 29, wherein, the piezoelectric layer includes following at least one nanometer
Grain：CNT and redox graphene.
31. ultrasonic sensor according to claim 25, wherein, the cmos circuit includes substrate and the shape on substrate
Into at least one transistor.
32. ultrasonic sensor according to claim 31, wherein, the cmos circuit also includes being located at described at least one
Multiple wiring layers and multiple interlayer dielectric layers on individual transistor, the multiple wiring layer are separated by the multiple interlayer dielectric layer
Into multiple different aspects.
33. ultrasonic sensor according to claim 32, in addition to：
Insulating barrier between the cmos circuit and the laminated piezoelectric；
The first opening and the second opening of at least one wiring layer in the multiple wiring layer are arrived separately in the insulating barrier；
The first electrode is connected to the first contact of at least one wiring layer through the described first opening；And
The second electrode is connected to the second of at least one wiring layer through the piezoelectric layer and second opening
Contact.
34. ultrasonic sensor according to claim 33, wherein, second contact and the first electrode each other every
Open.
35. ultrasonic sensor according to claim 33, wherein, the first electrode is contacted by same with described first
Individual conductive layer is formed, the first contact filling first opening.
36. ultrasonic sensor according to claim 33, in addition to：Arrived through the piezoelectric layer and first opening
First through hole up at least one wiring layer, the third through-hole through the piezoelectric layer arrival first electrode, it is described
First contact extends in the piezoelectric layer surface and fills the first through hole and the third through-hole, so as to be by described first
Electrode is connected at least one described wiring layer.
37. ultrasonic sensor according to claim 36, in addition to formed and opened through the piezoelectric layer and described second
Mouth reaches the second through hole of at least one wiring layer, the second contact filling second through hole.
38. ultrasonic sensor according to claim 36, in addition to：
Pad on the first surface of the piezoelectric layer；
The second contact of the pad is connected to through the piezoelectric layer and by the second electrode；And
The laminated piezoelectric is adhered to the first adhesive linkage on the cmos circuit,
Wherein, first adhesive linkage is made up of anisotropic-electroconductive adhesive, positioned at the first electrode and described at least one
Between individual wiring layer, and between the pad and at least one described wiring layer,
The first electrode is connected at least one described wiring layer via first adhesive linkage,
The second electrode is connected at least one described cloth via the described second contact, the pad and first adhesive linkage
Line layer.
39. the ultrasonic sensor according to claim 38, in addition to：
Passivation layer on the laminated piezoelectric.
40. the ultrasonic sensor according to claim 39, in addition to：
The second adhesive linkage on the passivation layer；And
Pressing plate on second adhesive linkage.
41. ultrasonic sensor according to claim 40, wherein, the pressing plate is by any group selected from following material
Into：Plastics, ceramics, sapphire, metal, alloy, makrolon and glass.
42. ultrasonic sensor according to claim 25, wherein, at least one ultrasonic transducer formation battle array
Row.
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