CN108717944B - 导电膜及其制备方法及显示装置 - Google Patents
导电膜及其制备方法及显示装置 Download PDFInfo
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- CN108717944B CN108717944B CN201810544773.4A CN201810544773A CN108717944B CN 108717944 B CN108717944 B CN 108717944B CN 201810544773 A CN201810544773 A CN 201810544773A CN 108717944 B CN108717944 B CN 108717944B
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- 238000002360 preparation method Methods 0.000 title abstract description 13
- 229920001046 Nanocellulose Polymers 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 239000000945 filler Substances 0.000 claims abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 37
- 239000000243 solution Substances 0.000 claims description 32
- LGZDNJBUAAXEMN-UHFFFAOYSA-N 1,2,2,3-tetramethyl-1-oxidopiperidin-1-ium Chemical compound CC1CCC[N+](C)([O-])C1(C)C LGZDNJBUAAXEMN-UHFFFAOYSA-N 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 229910021645 metal ion Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 17
- 239000006185 dispersion Substances 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- -1 aluminum ions Chemical class 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(I) nitrate Inorganic materials [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 229910001415 sodium ion Inorganic materials 0.000 claims description 5
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 4
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims description 3
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims description 3
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims description 3
- 229920001131 Pulp (paper) Polymers 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 229910001424 calcium ion Inorganic materials 0.000 claims description 3
- 229910001447 ferric ion Inorganic materials 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000012279 sodium borohydride Substances 0.000 claims description 3
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 239000006228 supernatant Substances 0.000 claims description 2
- 229920001661 Chitosan Polymers 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 41
- 239000002184 metal Substances 0.000 abstract description 41
- 229920002678 cellulose Polymers 0.000 abstract description 19
- 239000001913 cellulose Substances 0.000 abstract description 19
- 238000002834 transmittance Methods 0.000 abstract description 13
- 238000011161 development Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229920005610 lignin Polymers 0.000 abstract description 4
- 239000002131 composite material Substances 0.000 description 22
- 239000002585 base Substances 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000002028 Biomass Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000123 paper Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- WOZVHXUHUFLZGK-UHFFFAOYSA-N dimethyl terephthalate Chemical compound COC(=O)C1=CC=C(C(=O)OC)C=C1 WOZVHXUHUFLZGK-UHFFFAOYSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000004676 glycans Chemical class 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 238000003760 magnetic stirring Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920001282 polysaccharide Polymers 0.000 description 2
- 239000005017 polysaccharide Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000000790 scattering method Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 229920002201 Oxidized cellulose Polymers 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910001513 alkali metal bromide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 210000002421 cell wall Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L copper(II) hydroxide Inorganic materials [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- QKSIFUGZHOUETI-UHFFFAOYSA-N copper;azane Chemical compound N.N.N.N.[Cu+2] QKSIFUGZHOUETI-UHFFFAOYSA-N 0.000 description 1
- AQEDFGUKQJUMBV-UHFFFAOYSA-N copper;ethane-1,2-diamine Chemical compound [Cu].NCCN AQEDFGUKQJUMBV-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- IIPNDONTVPDUFZ-UHFFFAOYSA-N ethyl 2-methyl-1-oxido-3,4-dihydropyrrol-1-ium-2-carboxylate Chemical compound CCOC(=O)C1(C)CCC=[N+]1[O-] IIPNDONTVPDUFZ-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000002655 kraft paper Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229940107304 oxidized cellulose Drugs 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000011122 softwood Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/02—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber
- B05D7/04—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to macromolecular substances, e.g. rubber to surfaces of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/02—Fibres or whiskers
- C08K7/04—Fibres or whiskers inorganic
- C08K7/06—Elements
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L1/00—Compositions of cellulose, modified cellulose or cellulose derivatives
- C08L1/02—Cellulose; Modified cellulose
- C08L1/04—Oxycellulose; Hydrocellulose, e.g. microcrystalline cellulose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2201/00—Polymeric substrate or laminate
- B05D2201/02—Polymeric substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2518/00—Other type of polymers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0806—Silver
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0831—Gold
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/085—Copper
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
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- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/004—Additives being defined by their length
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- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
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- C08L2203/00—Applications
- C08L2203/16—Applications used for films
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08L2312/00—Crosslinking
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
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Abstract
提供的是导电膜及其制备方法及显示装置。所述导电膜包含:作为填充材料的纳米金属;和作为基体材料的氧化纳米纤维素。纳米金属/氧化纳米纤维素复合的导电膜具有高光透过率(高于约90%)、高耐热特性(可高达400℃)及高导电性,可用于柔性显示。此外,氧化纳米纤维素源自自然界植物中的木质素,成本低廉且制备过程环保,符合可持续发展理念。
Description
技术领域
本公开涉及显示领域。具体地,本公开涉及导电膜及其制备方法及显示装置。
背景技术
随着电子产品向轻量化、可折叠方向发展,以柔性衬底基板为基础的柔性透明导电膜在柔性显示领域应用前景广阔。当前研究和应用较多的透明柔性导电膜按导电层分类有氧化物系、金属系、高分子系等等。柔性透明导电膜不仅要求光透过率高、热稳定性好、导电性能好,还要求具有可弯曲性和一定的机械强度。
发明内容
在一个方面,本公开提供一种导电膜,所述导电膜包含:
作为填充材料的纳米金属;和
作为基体材料的氧化纳米纤维素。
在本公开的一个实施方案中,所述纳米金属均匀地分散在所述氧化纳米纤维素中。
在本公开的另一个实施方案中,所述氧化纳米纤维素是交联的氧化纳米纤维素。
在本公开的另一个实施方案中,所述氧化纳米纤维素是二价或三价金属离子交联的氧化纳米纤维素。
在本公开的另一个实施方案中,所述二价或三价金属离子选自钙离子、镁离子、铝离子和三价铁离子中的至少一种。
在本公开的另一个实施方案中,所述纳米金属选自纳米银、纳米铜和纳米金中的至少一种。
在本公开的另一个实施方案中,所述纳米金属选自纳米金属颗粒和纳米金属线中的至少一种。
在本公开的另一个实施方案中,所述纳米金属颗粒的粒径为10至20nm。
在本公开的另一个实施方案中,所述纳米金属线的直径为10至20nm且长度为100至200nm。
在本公开的另一个实施方案中,所述纳米金属与所述氧化纳米纤维素的重量比为10至200∶100。
在本公开的另一个实施方案中,所述氧化纳米纤维素的长径比为200至2000.且直径为1至10nm。
在本公开的另一个实施方案中,所述导电膜的厚度为5至50μm。
在另一个方面,本公开提供一种用于制备上面任何一项所述的导电膜的方法,所述方法包括:
将纳米金属的分散液和氧化纳米纤维素分散液混合,得到混合物,
将所述混合物涂覆于衬底基板上,和
干燥涂覆于所述衬底基板上的所述混合物,得到所述导电膜。
在本公开的一个实施方案中,所述方法还包括:在所述干燥步骤之后,将所述导电膜浸渍于二价或三价金属离子的溶液中,以用二价或三价金属离子置换所述氧化纳米纤维素中的至少一部分钠离子。
在再一个方面,本公开提供一种显示装置,所述显示装置包含上面任何一项所述的导电膜。
在本公开的一个实施方案中,所述导电膜是阴极、阳极、源极、漏极和栅极中的至少一种。
在本公开的另一个实施方案中,所述衬底基板是聚对苯二甲酸乙二醇酯或聚甲基丙烯酸甲酯衬底基板,其中所述导电膜与所述聚对苯二甲酸乙二醇酯或聚甲基丙烯酸甲酯衬底基板直接接触。
根据本公开,可以提供生物质基导电膜及其制备方法及显示装置。所述导电膜包含作为填充材料的纳米金属;和作为基体材料的氧化纳米纤维素。纳米金属/氧化纳米纤维素复合的导电膜具有高光透过率(高于约90%)、高耐热特性(可高达400℃)及高导电性,可用于柔性显示,并且氧化纳米纤维素源自自然界植物中的木质素,成本低廉且制备过程环保,符合可持续发展理念。
附图说明
为了更清楚地说明本公开实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本公开的示例性实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是示例性地显示根据本公开的一个具体的实施方案的制备导电膜的工艺步骤图;
图2是示例性地显示根据本公开的一个实施方案得到的氧化纳米纤维素分子的结构式;
图3是示例性地显示根据本公开的一个具体的实施方案的纳米银均匀地分散在氧化纳米纤维素中的结构示意图;和
图4是示例性地显示根据本公开的另一个具体的实施方案的纳米银均匀地分散在交联的氧化纳米纤维素中的结构示意图。
具体实施方式
下面将结合本公开的具体实施方案,对本公开实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施方案和/或实施例仅仅是本公开一部分实施方案和/或实施例,而不是全部的实施方案和/或实施例。基于本公开中的实施方案和/或实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方案和/或所有其他实施例,都属于本公开保护的范围。
在本公开中,如果没有具体指明,层和膜可以互换地使用。本公开中,所有数值特征都指在测量的误差范围之内,例如在所限定的数值的±10%之内,或±5%之内,或±1%之内。
柔性透明导电膜在柔性显示领域应用前景广阔。透明柔性导电膜按导电层分类有氧化物系、金属系、高分子系等等。
氧化物系导电膜因在TFT-LCD上应用较为成熟。例如,将氧化物系导电膜作为导电层沉积在聚对苯二甲酸乙二醇、聚甲基丙烯酸甲酯等衬底上可以制成柔性透明导电膜。但这种氧化物系导电材料容易因热膨胀问题而发生脱落,并且其制备过程往往要采用蒸镀、溅射等高精度工艺设备,还需要使用特殊气体。因此这种材料工艺复杂、成本高且不环保。而金属系导电膜因其光透过率较低,很难满足电子产品在该方面日益增高的要求。较新的关于银薄膜的研究结果表明:其光透过率也只有80%左右。高分子系导电膜透光性好但耐温性能差,化学稳定性差从而影响其他结构的性能,其导电能力也较差,有待进一步改善。
随着透明导电材料的技术研究发展,人们开始研究复合型导电材料,如电介质/金属/电介质、氧化物/金属/氧化物等三明治结构的复合导电膜。虽然导电性能得到很大提升,但仍不能解决制备工艺复杂、成本高昂的问题。一些采用碳纳米管、石墨烯等新材料的新型导电膜也存在制备过程的环境污染、成膜连续型、均一性、产率过低等问题。
因此,仍然需要提供一种具有高光透过率、高耐热特性、高导电性及环境友好的导电膜及其制备方法,以及含有导电膜的显示装置。
纤维素是由葡萄糖组成的大分子多糖。不溶于水及一般有机溶剂。纤维素是植物细胞壁的主要成分。纤维素是自然界中分布最广、含量最多的一种多糖,占植物界碳含量的50%以上。常温下,纤维素既不溶于水,又不溶于一般的有机溶剂,如酒精、乙醚、丙酮、苯等。它也不溶于稀碱溶液中。因此,在常温下,它是比较稳定的,这是因为纤维素分子之间存在氢键。纤维素不溶于水和乙醇、乙醚等有机溶剂,能溶于铜氨Cu(NH3)4(OH)2溶液和铜乙二胺[NH2CH2CH2NH2]Cu(OH)2溶液等。
纤维素与氧化剂发生化学反应,生成一系列与原来纤维素结构不同的物质。这样的反应过程,称为纤维素氧化,得到氧化纤维素。
本公开的发明人经过深入细致的研究,发现纳米金属/氧化纳米纤维素复合的导电膜具有高光透过率(高于约90%)、高耐热特性(可高达400℃)及高导电性,可用于柔性显示。并且氧化纳米纤维素源自自然界植物中的木质素,成本低廉且制备过程环保,符合可持续发展理念。因此,纳米金属/氧化纳米纤维素复合的导电膜是一种生物质基导电膜。
因此,在本公开的一个方面,可以提供一种导电膜,包含:
作为填充材料的纳米金属;和
作为基体材料的氧化纳米纤维素。
即,本公开提供的是一种纳米金属/氧化纳米纤维素复合的导电膜。
在纳米金属/氧化纳米纤维素复合的导电膜中,纳米金属起导电作用,氧化纳米纤维素作为复合材料的骨架使纳米金属颗粒均匀分散其中。并且,氧化纳米纤维素薄膜本身的透光性好(高于约90%),可以提升整个导电膜的透光性能。
在纳米金属/氧化纳米纤维素复合的导电膜中,纳米金属可以均匀地分散在氧化纳米纤维素中。通过使纳米金属均匀地分散在氧化纳米纤维素中,可以使导电膜的各种物理和化学性能在整个薄膜中均匀,从而提高显示性能。
在纳米金属/氧化纳米纤维素复合的导电膜中,氧化纳米纤维素可以是交联的氧化纳米纤维素。通过交联处理,复合后的材料更为紧密,可以进一步提高耐热性,并且保证导电膜的成膜连续性和导电性能均一性。
在纳米金属/氧化纳米纤维素复合的导电膜中,氧化纳米纤维素是二价或三价金属离子交联的氧化纳米纤维素。二价或三价金属离子选自钙离子、镁离子、铝离子和三价铁离子中的至少一种。
在纳米金属/氧化纳米纤维素复合的导电膜中,纳米金属可以选自纳米银、纳米铜和纳米金中的至少一种。
在纳米金属/氧化纳米纤维素复合的导电膜中,纳米金属可以选自纳米金属颗粒和纳米金属线中的至少一种。
纳米金属颗粒的粒径可以为10至20nm。
纳米金属线的直径可以为10至20nm且长度可以为100至200nm。
在纳米金属/氧化纳米纤维素复合的导电膜中,纳米金属与氧化纳米纤维素的重量比为10至200∶100,例如20至150∶100,或25至100∶100。通过使两者的比例在此范围内,可以同时满足导电性、耐热性、透光率和成膜性的要求。
在纳米金属/氧化纳米纤维素复合的导电膜中,氧化纳米纤维素的长径比可以为200至2000,且直径可以为1至10nm。
在纳米金属/氧化纳米纤维素复合的导电膜中,导电膜的厚度可以为5至50μm。
在本公开的另一个方面,可以提供一种用于制备上面任何一项所述的导电膜的方法。如图1所示,所述方法包括:
S11:将纳米金属的分散液和氧化纳米纤维素混合,得到混合物,
S12:将混合物涂覆于衬底基板上,和
S13:干燥涂覆于衬底基板上的混合物,得到导电膜。
所述方法还可以包括:在所述干燥步骤S13之后,将导电膜浸渍于二价或三价金属离子的溶液中,以用二价或三价金属离子置换氧化纳米纤维素中的至少一部分钠离子。
在将纳米金属的分散液和氧化纳米纤维素混合得到的混合物中,将纳米金属和氧化纳米纤维素混合均匀,这可以通过超声处理进行。
此外,在干燥涂覆于衬底基板上的混合物后,得到的导电膜位于衬底基板上。根据需要,可以将导电膜从衬底基板上剥离。将导电膜浸渍于二价或三价金属离子的溶液中可以包括:将导电膜与衬底基板以未剥离的状态浸渍于二价或三价金属离子的溶液中,也可以包括:将剥离后的导电膜浸渍于二价或三价金属离子的溶液中。
在本公开的再一个方面,可以提供一种显示装置,所述显示装置包含上面任何一项所述的导电膜。
在显示装置中,导电膜可以是阴极、阳极、源极、漏极和栅极中的至少一种。
在显示装置中,衬底基板可以是聚对苯二甲酸乙二醇酯或聚甲基丙烯酸甲酯衬底基板。导电膜与所述聚对苯二甲酸乙二醇酯或聚甲基丙烯酸甲酯衬底基板直接接触。通过使用聚对苯二甲酸乙二醇酯或聚甲基丙烯酸甲酯衬底基板,氧化纳米纤维素材料与衬底基板因都含有酯基等含氧基团而表现出高亲和性,有利于导电膜在衬底基板上的粘附。
氧化纳米纤维素可以由纤维素在碱金属溴化物和四甲基哌啶-N-氧化物存在下,在pH为9至10的条件下被次氯酸盐氧化得到的。由此得到的氧化纳米纤维素的结构式如图2所示。
下面以纳米金属是纳米银颗粒为例进行说明,但本公开不限于此。例如纳米金属还可以是纳米铜或纳米金中的至少一种。此外,纳米金属也可以是纳米金属线。
纳米银颗粒的分散液可以通过可溶性银盐在表面活性剂存在下,在水中在碱性条件下被碱金属硼氢化物还原得到。
因此,根据本公开的导电膜可以是纳米银/未交联的氧化纳米纤维素复合的导电膜,如图3中所示。从图3可以看出,纳米银颗粒均匀地分散在未交联的氧化纳米纤维素中。在未交联的氧化纳米纤维素中,金属离子是钠离子。
另外,根据本公开的导电膜也可以是纳米银/交联的氧化纳米纤维素复合的导电膜,如图4中所示。从图4可以看出,纳米银颗粒均匀地分散在交联的氧化纳米纤维素中。未交联的氧化纳米纤维素中,至少部分钠离子被二价或三价金属离子置换。交联的氧化纳米纤维素的结构更加致密,具有更强的阻水阻气特性,防水氧穿透能力更强。此外,它本身耐高温性能优异,纳米金属如钠米银的加入增强了其散热速度,使之耐热性能可达400℃,从而可以满足电子器件对热稳定性的要求。经交联过程处理后,该材料的力学性能进一步提高,弯曲性能更加优异,在柔性显示器件领域具有较大潜力。
下面提供一种制备纳米银/氧化纳米纤维素复合的导电膜的示例方法。
将四甲基哌啶-N-氧化物(TEMPO)(催化剂)和NaBr加入去离子水中搅拌至溶解,加入湿木浆(一般含水量为81%),再加入适量的NaClO以起到氧化作用,然后用NaOH维持pH=10,反应适当时间后过滤,再将其超声分散于去离子水中以除去未氧化的纤维素,高速离心后可得TEMPO氧化的纳米纤维素溶液。
将AgNO3粉末溶于去离子水中,加入表面活性剂聚乙烯吡咯烷酮(PVP)充分搅拌得溶液A。将NaBH4和NaOH溶解在去离子水中得溶液B。超声振荡和恒温磁力搅拌时将溶液A滴入溶液B中,控制恒温至反应结束,再洗涤及超声分散,得到纳米银的水分散液。
将TEMPO氧化的纳米纤维素溶液及纳米银的水分散液按比例混合,超声分散均匀后涂覆于平整的衬底基板上,风干水分即可得分散均匀的纳米银/氧化纳米纤维素复合的柔性透明导电膜。
实施例
下面通过具体实施方式来进一步说明本公开的技术方案。但是,这些实施例是为了举例说明本公开,而不应当理解为限制本公开。
实施例1:TEMPO氧化的纳米纤维素溶液的制备
将0.033g TEMPO和0.33g NaBr加入到100g的去离子水中搅拌至溶解,加入1.25g的含水量为81%的湿木浆(针叶木漂白硫酸盐浆,购买于日本制纸株式会社),再加入0.5g的浓度为3.8mmol/g的NaClO水溶液,得到混合物。然后用0.4mol/L浓度的NaOH水溶液维持混合物的pH=10,反应6h时间后用滤纸过滤,再将滤纸上滤得物超声分散于去离子水中,未被氧化的纳米纤维素10000rpm离心后沉在离心管底部,得到上清液,为TEMPO氧化的纳米纤维素质量分数为0.1%的TEMPO氧化的纳米纤维素溶液。
实施例2:纳米银的水分散液
将0.0136g AgNO3粉末溶于40mL去离子水中,加入1.2g PVP,充分搅拌得溶液A。将0.05g NaBH4和0.02g NaOH溶解在100mL去离子水中得溶液B。超声振荡和恒温磁力搅拌时将溶液A滴入溶液B中,控制恒温(70℃)至反应结束(2h),再洗涤及超声分散,得到纳米银的水分散液。
实施例3:导电膜的制备
将TEMPO氧化的纳米纤维素溶液及纳米银的水分散液按TEMPO氧化的纳米纤维素与纳米银的重量比为2∶8的比例混合,超声分散均匀后,倒入聚对苯二甲酸二甲酯培养皿中,使得干燥后的导电膜的厚度为20μm,将其60℃干燥,得到分散均匀的纳米银/氧化纳米纤维素复合的柔性透明导电膜,即实施例3的导电膜。
实施例4:导电膜的制备
除了将TEMPO氧化的纳米纤维素与纳米银的重量比例改变为3∶7之外,以与实施例3相同的方式制备,得到实施例4的导电膜。
实施例5:导电膜的制备
除了将TEMPO氧化的纳米纤维素与纳米银的重量比例改变为4∶6之外,以与实施例3相同的方式制备,得到在衬底基板上的导电膜。
将导电膜从衬底基板上剥离。将剥离的导电膜在0.1mol/L浓度的氯化钙溶液中浸渍2h时间,得到实施例5的导电膜。
实施例6:导电膜的制备
除了将TEMPO氧化的纳米纤维素与纳米银的重量比例改变为5∶5之外,以与实施例5相同的方式制备,得到实施例6的导电膜。
性能测试
通过如下方法测试实施例3-6得到的导电膜的性能
1.TEMPO氧化的纳米纤维素的长度和直径
由激光衍射散射法测量100根EMPO氧化的纳米纤维素的长度和直径,并且将其平均值分别作为TEMPO氧化的纳米纤维素的长度和直径。
2.纳米银的平均粒径
由激光衍射散射法测量100颗纳米银粒子的直径,并且将其平均值作为纳米银粒子的直径。
2.导电膜的透光率
用分光光度计在560nm处测量。91%
3.导电膜的耐热性
导电膜的耐热性表示导电膜在5重量%损失时的温度。400℃
4.导电膜的电阻率
使用四探针法测量。
结果总结于下表中
从表中可以看出,纳米金属/氧化纳米纤维素复合的导电膜具有高光透过率(高于约90%)、高耐热特性(大于或等于350℃)及高导电性。此外,通过交联可以进一步提高耐热性(大于或等于400℃)。
根据本公开,可以提供生物质基导电膜及其制备方法及显示装置。所述导电膜包含作为填充材料的纳米金属;和作为基体材料的氧化纳米纤维素。纳米金属/氧化纳米纤维素复合的导电膜具有高光透过率(高于约90%)、高耐热特性(可高达400℃)及高导电性,可用于柔性显示,并且氧化纳米纤维素源自自然界植物中的木质素,成本低廉且制备过程环保,符合可持续发展理念。
显然,本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开的精神和范围。这样,倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内,则本公开也意图包含这些改动和变型在内。
Claims (13)
1.一种用于制备导电膜的方法,所述方法包括:
制备四甲基哌啶-N-氧化物(TEMPO)氧化的纳米纤维素溶液;
制备纳米银的水分散液;
将所述纳米银的水分散液和所述TEMPO氧化的纳米纤维素溶液混合,得到混合物,
将所述混合物涂覆于衬底基板上,和
干燥涂覆于所述衬底基板上的所述混合物,得到所述导电膜,
其中,所述制备TEMPO氧化的纳米纤维素溶液包括:
将四甲基哌啶-N-氧化物和NaBr加入去离子水中搅拌至溶解,加入湿木浆,再加入NaClO水溶液;
用NaOH维持pH在9至10之间,反应后过滤,得到滤得物;以及
将所述滤得物超声分散于去离子水中并离心,得到上清液作为TEMPO氧化的纳米纤维素溶液,
其中,所述制备纳米银的水分散液包括:
将AgNO3粉末溶于去离子水中,加入聚乙烯吡咯烷酮,获得溶液A;
将NaBH4和NaOH溶解在去离子水中,获得溶液B;以及
将溶液A滴入溶液B中反应,洗涤并超声分散,得到纳米银的水分散液。
2.根据权利要求1所述的方法,所述方法还包括:在所述干燥步骤之后,将所述导电膜浸渍于二价或三价金属离子的溶液中,以用二价或三价金属离子置换所述TEMPO氧化的纳米纤维素中的至少一部分钠离子。
3.一种根据权利要求1所述的方法制备的导电膜,所述导电膜包含:
作为填充材料的纳米银;和
作为基体材料的TEMPO氧化的纳米纤维素;
其中所述纳米银与所述TEMPO氧化的纳米纤维素的重量比为10至200∶100,
其中所述导电膜不包含壳聚糖。
4.根据权利要求3所述的导电膜,其中所述纳米银均匀地分散在所述TEMPO氧化的纳米纤维素中。
5.根据权利要求3所述的导电膜,其中所述TEMPO氧化的纳米纤维素是交联的TEMPO氧化的纳米纤维素。
6.根据权利要求3所述的导电膜,其中所述TEMPO氧化的纳米纤维素是二价或三价金属离子交联的TEMPO氧化的纳米纤维素。
7.根据权利要求6所述的导电膜,其中所述二价或三价金属离子选自钙离子、镁离子、铝离子和三价铁离子中的至少一种。
8.根据权利要求3所述的导电膜,其中所述纳米银选自纳米银颗粒和纳米银线中的至少一种,所述纳米银颗粒的粒径为10至20nm,并且所述纳米银线的直径为10至20nm且长度为100至200nm。
9.根据权利要求3所述的导电膜,其中所述TEMPO氧化的纳米纤维素的长径比为200至2000,且直径为1至10nm。
10.根据权利要求3所述的导电膜,所述导电膜的厚度为5至50μm。
11.一种显示装置,所述显示装置包含权利要求3所述的导电膜。
12.权利要求11所述的显示装置,其中所述导电膜是阴极、阳极、源极、漏极和栅极中的至少一种。
13.权利要求11所述的显示装置,其中所述衬底基板是聚对苯二甲酸乙二醇酯或聚甲基丙烯酸甲酯衬底基板,其中所述导电膜与所述聚对苯二甲酸乙二醇酯或聚甲基丙烯酸甲酯衬底基板直接接触。
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