CN108710164B - Ultra-wideband anti-reflection micro-structure and preparation method thereof - Google Patents
Ultra-wideband anti-reflection micro-structure and preparation method thereof Download PDFInfo
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- CN108710164B CN108710164B CN201810516821.9A CN201810516821A CN108710164B CN 108710164 B CN108710164 B CN 108710164B CN 201810516821 A CN201810516821 A CN 201810516821A CN 108710164 B CN108710164 B CN 108710164B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
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Abstract
A kind of infrared broadband anti-reflection micro-structure successively includes substrate, nano-structure array layer and low-index layer from bottom to top；The nano-structure array layer has the main shaft perpendicular to the substrate surface, and section is the nanostructure of the grading structures such as triangle, cone, parabola shaped or gaussian-shape.The present invention adds one layer of low-index material on nano-structure array, which is realized by ion aeam sputtering deposition technique or electron beam evaporation ion beam assisted deposition, to avoid water absorption.By adjusting the thickness of low-index layer, so that the wide band antireflective effect of nano-structure array layer gets a promotion, realize that the height of broadband range is saturating, and H103 resin is more flat.
Description
Technical field
The invention belongs to optics anti-reflection fields, and in particular to a kind of wide band antireflective micro-structure applied to infrared band and
Preparation method.
Background technique
In infrared optical element, the refractive index of base material is larger, due to substrate material surface reflex and make
Optical energy loss.For the reflection loss for reducing surface, the mode generallyd use at present is to be coated with antireflective film in substrate material surface,
The Coating Materials type that anti-reflection needs in broadband range is more, film layer is more, film layer is thick；It is limited by different materials evaporation characteristic, film
The generally existing gather density of layer is low, water absorbs situations such as obvious.Coating Materials type is more, film layer is more, film layer is thick, can introduce miscellaneous
Matter, defect and water absorb, so that the optical property to film generates adverse effect.Between multilayer film, physical property between film and substrate
Mismatch will cause the problems such as film adhesion is poor, unstable.In addition, the laser damage threshold of multilayer film limits it big
Use in power laser system.
To overcome deficiency existing for multilayer antireflective film, occur in the prior art using in element surface preparation micro-structure
Mode, the period of micro-structure are much smaller than the wavelength of institute's light requirement.Micro-structure is periodical circular cone or parabolic cone array, its equivalent folding
It penetrates rate to be made of the air and basis material of certain volume, to form graded-index layer, reduce between element surface and air
Refringence, improve transmitance of the device window within the scope of broadband.This structure on base material due to directly making
It is standby, there can be very high damage threshold, and there is good mechanical performance and thermostabilization to avoid the introducing of impurity material
Property.The absorption property of micro-structure is low simultaneously, and antireflective stability is good, can substitute multilayer dielectric film and organic film well.Using
It is higher in the refractive index of infrared band optical element, to realize highly transmissive effect within the scope of infrared broadband, surface micro-structure
Height is generally significantly larger than array period, this feature makes practical preparation and processing difficulties.
Summary of the invention
The present invention overcomes above-mentioned the deficiencies in the prior art, provide a kind of ultra-wideband anti-reflection micro-structure, pass through single layer
Low-index layer and nano-structure array combine, heavy using ion aeam sputtering deposition technique or electron beam evaporation Assisted by Ion Beam
Product technology is coated with single layer low refractive index material layer on nano-structure array, can be good at solving between film layer and substrate
With property and stress in thin film problem, while reducing the design and preparation need of the big depth-to-width ratio of nanostructure in nano-structure array layer
It wants, preparation difficulty and cost is reduced, to obtain the highly transmissive effect in infrared band broadband.
Technical solution of the present invention is specific as follows:
A kind of infrared broadband anti-reflection micro-structure successively includes substrate, nano-structure array layer and low folding from bottom to top
Penetrate rate layer；The nano-structure array layer has the main shaft perpendicular to the substrate surface, and section is triangle, circular cone
The nanostructure of the grading structures such as shape, parabola shaped or gaussian-shape.
The substrate material is to be greater than 60% material in infrared band transmitance.
Further, the infrared broadband anti-reflection micro-structure, the nanostructure period answers in nano-structure array layer
Less than λ/ns, wherein λ is the minimal wave length in interested wave band, ns by consideration base material refractive index.
Further, the nano-structure array layer has the main shaft perpendicular to the substrate surface, and section is three
The base diameter of the nanostructure of the grading structures such as angular, conical, parabola shaped or gaussian-shape, nanostructure is less than nano junction
The period of structure array, the ratio of the base diameter of the height and nanostructure of nanostructure are 0.8-1.6.
Further, the material of the low-index layer is to be far below the material of substrate in the high saturating and refractive index of required wave band
Material is prepared using ion beam sputtering technology or electron beam evaporation Ion-assisted Technology in High Power.
The low-index layer it is gentle from substrate to air between refringence, make broadband range H103 resin more
It is flat.Change the surface electric field distribution for using wave band, moves into strong electrical field in base material body by substrate material surface.
A method of the anti-reflection micro-structure of infrared broadband being prepared, step includes:
1) mask pattern of design is prepared after one layer photoresist of spin coating using holographic interferometry technique in substrate；
2) mask pattern of preparation is transferred in substrate using reactive ion beam etching technique, prepares nano-structure array
Layer；
3) it is prepared on nano-structure array layer using ion beam sputtering or electron beam evaporation ion beam assisted depositing technique
Low-index layer.
Compared with prior art, beneficial effects of the present invention:
Single layer low-index layer is added on nano-structure array layer, by ion beam sputter depositing or electron beam evaporation from
Beamlet assistant depositing low-index layer effectively solves demand of the micro-structure to big depth-to-width ratio, realizes the height of infrared broadband range
Transmitance, transmission curve within the scope of smooth broadband, for surface micro-structure in the light such as infrared window and infrared optical lens
The application learned in element is of great significance.
Detailed description of the invention
Fig. 1 is the schematic diagram of the infrared broadband anti-reflection micro-structure of the present invention.
Fig. 2 is the scanning electron microscope (SEM) photograph that infrared broadband anti-reflection micro-structure depression angle is 45 °.
Fig. 3 is scanning electron microscope (SEM) photograph of the anti-reflection micro-structure along main axis cross section.
Fig. 4 is the infrared transmittivity spectrogram of zinc selenide substrate single side preparation micro-structure in embodiment
Fig. 5 is surface electric field distribution of the infrared broadband anti-reflection micro-structure before and after being coated with single layer low-index layer,
In, a is field distribution of the anti-reflection micro-structure before being coated with single layer low-index layer, and b is that anti-reflection micro-structure is being coated with single layer
Field distribution after low-index layer.
Specific embodiment
Below with reference to embodiment and attached drawing, the invention will be further described, but protection model of the invention should not be limited with this
It encloses.
Referring to Fig. 1, Fig. 1 is the infrared anti-reflection micro-structure schematic diagram of broadband of the present invention, as shown, including from bottom to top
Substrate 1, nano-structure array layer 2 and single layer low-index layer 3.In this example, using material of infrared window as preferred material, at it
Surface prepares micro-structure, to increase its infrared broadband transmitance.
In this example, Choice of substrate materials zinc selenide, zinc selenide is a kind of optics for having preferable transmitance in infrared band
Material, print need twin polishing to handle.
Specifically, the preparation method of the wide band antireflective micro-structure of this preferred embodiment, specifically includes the following steps:
(1) mask pattern is prepared
Firstly, the zinc selenide substrate immersion of twin polishing is cleaned by ultrasonic 10-20min in acetone, deionization is then used
Water is dried after rinsing；
Positive photoresist is equably coated on zinc selenide substrate using spin-coating method, photoresist is with a thickness of 400-600nm；
It is exposed using holographic interferometry technique, the print after exposure is put into developer solution and is developed, it is obtained
Mask pattern is two dimensional periodic lattice, and the period is 0.5-1.0 μm；
(2) dry etching prepares nano-structure array layer
The mask pattern of preparation is transferred to zinc selenide substrate surface using reactive ion etching technology, obtains nanostructure
Array layer.The period of nano-structure array is 0.5-1.0 μm, as shown in Figure 2.The height of nanostructure is 0.8-1.4 μm, nanometer
The base diameter of structure is 0.4-1.0 μm, as shown in Figure 3.
(3) low-index layer is prepared using ion beam sputter depositing technique on nano-structure array layer.Low-refraction material
Material is Al2O3, with a thickness of 260-400nm, as shown in Figure 3.
(4) Fig. 4 is the transmitance of base material 2-5 μm of infrared band after different modes are handled, and 1 is twin polishing
Sample, 2 are prepared with the sample of nano-structure array layer for single side, and 3 are prepared with nano-structure array layer and low-refraction for single side
The sample of layer.
(5) Fig. 5 is that base material is prepared with nano-structure array layer, is prepared with nano-structure array layer and low-index layer
Distribution map of the electric field.
The ultra-wideband anti-reflection micro-structure that the present embodiment is prepared in zinc selenide substrate single side includes nano-structure array layer
And low-index layer, it can be made to improve 11% or more in 2-5 μm of infrared band single side mean transmissivity.
The results showed the infrared broadband anti-reflection micro-structure of the present invention is able to ascend the transmission within the scope of infrared broadband
The problem of the problem of rate, which can solve film layer and substrate surface adhesive force and film layer water absorb, well
Meet the needs of infrared band broadband is high saturating, change the distribution of element surface stationary field, can be used for infrared detector window member
Part, laser gain medium element.
The above examples are only used to illustrate the technical scheme of the present invention and are not intended to limit it, the ordinary skill of this field
Personnel can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the spirit and scope of the present invention, this
The protection scope of invention should subject to the claims.
Claims (6)
1. a kind of infrared broadband anti-reflection micro-structure, which is characterized in that from bottom to top successively include substrate (1), nanostructure
Array layer (2) and single layer low-index layer (3), the nano-structure array layer (2) have perpendicular to the substrate (1) surface
Main shaft, and section be triangle, cone, parabola shaped or gaussian-shape grading structure nanostructure, the nano junction
The nanostructure period of structure array layer (2) is less than λ/nS, wherein λ is the minimal wave length in interested wave band, nsFor base material
Refractive index.
2. infrared broadband anti-reflection micro-structure as described in claim 1, which is characterized in that the substrate material is required
Infrared band transmitance is greater than 60% material.
3. infrared broadband anti-reflection micro-structure as described in claim 1, which is characterized in that the nano-structure array layer
(2) base diameter of nanostructure is less than the period of nano-structure array, the height of nanostructure and the bottom of nanostructure in
The ratio range of diameter is 0.9-1.8.
4. infrared broadband anti-reflection micro-structure as described in claim 1, which is characterized in that the low-index layer (3)
By the high saturating material of required wave band, it is prepared using ion beam sputtering technology or electron beam evaporation Ion-assisted Technology in High Power.
5. a kind of method for preparing any infrared broadband anti-reflection micro-structure of claim 1-4, which is characterized in that the party
Method includes:
Step 1), the exposure mask figure on substrate (1) after one layer photoresist of spin coating, needed for being prepared using holographic interferometry technique
Shape；
Mask pattern prepared by step 1) is transferred on substrate (1) by step 2) using reactive ion beam etching technique, preparation power
Benefit requires the nano-structure array layer (2) in 1；
Step 3) uses ion aeam sputtering deposition technique or electron beam evaporation ion beam assisted depositing on nano-structure array layer
Technology prepares low-index layer.
6. a kind of include the infrared window of infrared broadband anti-reflection micro-structure, infrared mirror described in any one of claims 1 to 4
Piece or infrared laser gain media.
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| CN109972103B (en) * | 2019-02-25 | 2022-04-05 | 中山大学 | Wide-angle solar spectrum selective absorption film and preparation method thereof |
| CN110230096A (en) * | 2019-06-26 | 2019-09-13 | 中国科学院上海光学精密机械研究所 | Micro-structure and preparation method thereof that lithium triborate crystal surface is anti-reflection |
| CN111999912A (en) * | 2020-08-26 | 2020-11-27 | 中国科学院上海光学精密机械研究所 | Refractive index tunable film structure and preparation method thereof |
| CN112859209B (en) * | 2021-02-05 | 2022-11-22 | 业成科技（成都）有限公司 | Cover plate structure and manufacturing method thereof |
| CN113238309B (en) * | 2021-04-30 | 2022-08-05 | 中国建筑材料科学研究总院有限公司 | Grating type near-infrared transmission-increasing optical element and preparation method and application thereof |
| CN116931134A (en) * | 2022-03-31 | 2023-10-24 | 荣耀终端有限公司 | Antireflection glass, preparation method thereof, display screen of electronic equipment and electronic equipment |
| CN115083260A (en) * | 2022-07-25 | 2022-09-20 | 深圳市兆驰光元科技有限公司 | Light-gathering film, backlight module and display panel |
| CN115113316B (en) * | 2022-08-01 | 2023-08-11 | 中国科学院光电技术研究所 | Laser infrared compatible flexible electromagnetic functional film and preparation method thereof |
| CN115421227B (en) * | 2022-10-08 | 2023-06-13 | 桂林电子科技大学 | Bionic antireflection film structure |
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| CN101726769A (en) * | 2009-12-16 | 2010-06-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Long laminated sub-wave reflection-reducing structure and preparation method thereof |
| CN104386645A (en) * | 2014-10-16 | 2015-03-04 | 中国工程物理研究院激光聚变研究中心 | Method for preparing random sub-wavelength broadband antireflection microstructure based on mask etching |
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| US20150202834A1 (en) * | 2014-01-20 | 2015-07-23 | 3M Innovative Properties Company | Lamination transfer films for forming antireflective structures |
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| CN101726769A (en) * | 2009-12-16 | 2010-06-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Long laminated sub-wave reflection-reducing structure and preparation method thereof |
| CN104386645A (en) * | 2014-10-16 | 2015-03-04 | 中国工程物理研究院激光聚变研究中心 | Method for preparing random sub-wavelength broadband antireflection microstructure based on mask etching |
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