CN115113316B - Laser infrared compatible flexible electromagnetic functional film and preparation method thereof - Google Patents
Laser infrared compatible flexible electromagnetic functional film and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000010521 absorption reaction Methods 0.000 claims abstract description 48
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 230000000737 periodic effect Effects 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000002444 silanisation Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 91
- 239000000463 material Substances 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 11
- -1 polymethylsiloxane Polymers 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 10
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000033228 biological regulation Effects 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 229920002379 silicone rubber Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002120 nanofilm Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000004945 silicone rubber Substances 0.000 claims description 3
- 229920001935 styrene-ethylene-butadiene-styrene Polymers 0.000 claims description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 2
- 238000000469 dry deposition Methods 0.000 claims description 2
- 239000004038 photonic crystal Substances 0.000 claims 2
- 230000008569 process Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 description 14
- 238000002310 reflectometry Methods 0.000 description 9
- 238000004088 simulation Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910001338 liquidmetal Inorganic materials 0.000 description 3
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 3
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/204—Filters in which spectral selection is performed by means of a conductive grid or array, e.g. frequency selective surfaces
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a flexible electromagnetic functional film compatible with laser and infrared and a preparation method thereof, wherein the film comprises a flexible substrate, and the surface of the film is provided with a micro-nano periodic structure; the metal reflecting layer is formed on the micro-nano periodic structure and forms a phase super surface with the flexible substrate so as to regulate and control the scattering direction of the first laser through a phase gradient; and the absorption layer is formed on the metal reflection layer, is used for absorbing the second laser independently or together with the metal reflection layer, and is matched with the metal reflection layer to realize low emissivity of the middle-far infrared band. The invention realizes the low detectability of the middle and far infrared wave bands and the laser wavelengths of 1.064 mu m, 1.55 mu m and 10.6 mu m, has a flexible function, can be attached to any surface, and has wide application prospect in the wearable field and curved surface special-shaped surfaces. The invention prepares the flexible substrate by silanization treatment on the surface of the substrate, and has the advantages of simple process, short preparation period and large-area preparation.
Description
Technical Field
The invention belongs to the technical field of multiband electromagnetic wave regulation and control, and particularly relates to a flexible electromagnetic functional film compatible with laser and infrared and a preparation method thereof.
Background
With the development of multi-spectrum detection technology, infrared and laser detection have been widely used in various fields, and corresponding infrared and laser compatible low-detectable functional materials have urgent needs.
For infrared detection, low emissivity (high reflectivity) (3-14 μm) in the mid-far infrared band is required to achieve multi-band low detectable effect; for laser detection, low reflectivity is required at the primary detection wavelengths of the several lasers of 1.06 μm, 1.55 μm, and 10.6 μm. Thus, there is a contradiction in that materials are required to have diametrically opposed properties in the same electromagnetic band in order to achieve simultaneous invisibility to both laser and infrared. In practical applications, materials compatible with infrared light and multiple laser wavelengths are also required to be developed to cope with more complex detection environments.
In addition, most of the existing infrared laser low-detection materials are hard substrates and are not flexible. With the development of infrared metamaterial and micro-processing technology, the processing and preparation of flexible metamaterial are also attracting attention. The preparation technology of the flexible infrared metamaterial mainly comprises a forward stripping method and a liquid metal injection method at present, wherein the forward stripping method is more in use, a sacrificial layer of an organic substance is firstly manufactured on a silicon wafer, and then a flexible material is manufactured on the surface of the sacrificial layer; the liquid metal injection method is to dig holes in the flexible base material and then to inject the liquid metal for forming, and the preparation method is relatively complex.
Therefore, in order to solve the above technical problems, it is necessary to provide a flexible electromagnetic functional film compatible with laser and infrared and a preparation method thereof.
Disclosure of Invention
Aiming at the problems of multiple laser wavelengths and invisible infrared, the invention provides a flexible electromagnetic functional film compatible with laser infrared and a preparation method thereof, wherein the film can realize low detectability of three laser wavelengths of middle and far infrared wave bands (3-14 mu m) and 1.064 mu m, 1.55 mu m and 10.6 mu m and has low specular reflection.
To this end, an aspect of the present invention provides a laser infrared compatible flexible electromagnetic functional film, including:
a flexible substrate, the surface of which is provided with a micro-nano periodic structure;
the metal reflecting layer is formed on the micro-nano periodic structure and forms a phase super surface with the flexible substrate so as to regulate and control the scattering direction of the first laser through a phase gradient;
and the absorption layer is formed on the metal reflection layer, is used for absorbing the second laser independently or together with the metal reflection layer, and is matched with the metal reflection layer to realize low emissivity of the middle-far infrared band.
Further, the material of the flexible substrate comprises one of polymethyl siloxane, SEBS and silicone rubber, and the thickness of the flexible substrate is 0.1-2 mm.
Further, the material of the metal reflecting layer comprises one of gold, silver, aluminum and copper, and the thickness of the metal reflecting layer is larger than the skin depth of the material.
Further, the first laser comprises laser with the wavelength of 10.6 μm, and the micro-nano periodic structure is designed based on the scattering direction regulation and control requirement of the first laser.
Further, the phase subsurface formed is a geometric phase subsurface or a resonant phase subsurface to produce the phase gradient.
Further, the absorption layer is a single-layer intrinsic absorption film layer or a multi-layer photon absorption film layer.
Further, the material of the single-layer intrinsic absorption film layer comprises Fe 3 O 4 And InAs, the multilayer photon absorption film layer comprises a Ge/Ti/Ge photon crystal absorption film layer, a ZnS/Ti/ZnS photon crystal absorption film layer and Al 2 O 3 /W/Al 2 O 3 One of the photon crystal absorption film layers.
Further, the second laser includes a laser having a wavelength of 1.064 μm and a laser having a wavelength of 1.55 μm, and the wavelength range of the mid-far infrared band is 3 to 14 μm, wherein the absorption layer is lossless in the mid-far infrared band and the metal reflection layer has a low infrared radiation characteristic.
The invention also provides a preparation method of the flexible electromagnetic functional film compatible with laser and infrared, which comprises the following steps:
s1, photoetching and preparing a microstructure on a substrate, wherein the microstructure is provided with an inverse pattern corresponding to the micro-nano periodic structure;
s2, silanizing the surface of the substrate with the microstructure by adopting polytrimethylchlorosilane;
s3, pouring the liquid polymethylsiloxane mixed with the curing agent on the surface of the substrate treated in the S2, and heating and curing under vacuum conditions;
and S4, removing the flexible substrate with the micro-nano periodic structure after furnace cooling, and sequentially forming a metal reflecting layer and an absorbing layer on the micro-nano periodic structure of the flexible substrate to obtain the laser infrared compatible flexible electromagnetic functional film.
Further, the substrate is a silicon wafer; the silanization treatment is that a substrate with a microstructure is placed in a vacuum dryer for 30-120 min and a molecular film is formed by dry deposition of polytrimethylchlorosilane; the liquid polymethylsiloxane mixed with the curing agent is prepared by mixing the liquid polymethylsiloxane and the curing agent according to the mass ratio of 10:1-3, and then removing bubbles in vacuum for 20-60 min after uniform mixing; the curing condition is vacuum curing for 1-3 h at 60-100 ℃.
Compared with the prior art, the invention has the beneficial effects that:
(1) The laser infrared compatible flexible electromagnetic functional film realizes low detectability of three laser wavelengths of middle and far infrared wave bands (3-14 mu m) and 1.064 mu m, 1.55 mu m and 10.6 mu m. Wherein, the invisible mechanism of 1.064 μm and 1.55 μm laser wavelength is an absorption mechanism, the low detection mechanism of 10.6 μm laser wavelength is a phase cancellation mechanism, and the flexible electromagnetic functional film has low specular reflection.
(2) The flexible electromagnetic functional film has a flexible function, can be attached to any surface, and has wide application prospects in the field of wearable and curved surface special-shaped surfaces.
(3) In addition, the flexible substrate is prepared by silanization treatment on the surface of the substrate, and has the advantages of simple process, short preparation period, large-area preparation and low cost.
Drawings
For a clearer understanding of the structure and embodiments of the present invention, reference will be made to the following drawings, which are required to illustrate only some embodiments of the invention.
Fig. 1 is a schematic view showing a partial structure of a flexible electromagnetic functional film compatible with laser infrared according to an exemplary embodiment 1 of the present invention.
Fig. 2 shows a graph of reflectance test of a laser infrared compatible flexible electromagnetic functional film in a wavelength range of 0.8 to 1.7 μm according to exemplary embodiment 1 of the present invention.
FIG. 3 shows a graph of specular reflectance testing of a laser infrared compatible flexible electromagnetic functional film in the wavelength range of 3-14 μm according to exemplary embodiment 1 of the present invention.
Fig. 4 shows a graph of emissivity test of a flexible electromagnetic functional film compatible with laser infrared in a wavelength range of 3 to 14 μm according to exemplary embodiment 1 of the present invention.
Fig. 5 shows a graph of simulated reflectance of a laser infrared compatible flexible electromagnetic functional film in the wavelength range of 0.8-1.7 μm according to exemplary embodiment 2 of the present invention.
Fig. 6 shows a graph of simulated specular reflectance over a wavelength range of 8-14 μm for a laser infrared compatible flexible electromagnetic functional film according to exemplary embodiment 2 of the present invention.
Fig. 7 shows a graph of simulated emissivity of a flexible electromagnetic functional film compatible with laser infrared in the wavelength range of 8-14 μm according to exemplary embodiment 2 of the present invention.
Detailed Description
All of the features disclosed in this specification, or all of the steps in a method or process disclosed, may be combined in any combination, except for mutually exclusive features and/or steps.
Any feature disclosed in this specification may be replaced by alternative features serving the same or equivalent purpose, unless expressly stated otherwise. That is, each feature is one example only of a generic series of equivalent or similar features, unless expressly stated otherwise.
In order that the nature of the invention may be more readily understood, reference will now be made in detail to the accompanying drawings and specific embodiments, examples of which are illustrated only in a few embodiments of the invention, and other combinations are possible without departing from the invention.
The invention aims to provide a laser infrared compatible flexible electromagnetic functional film and a preparation method thereof, and on one hand, the flexible film can realize low detection of three laser wavelengths of middle and far infrared wave bands (3-14 mu m) and 1.064 mu m, 1.55 mu m and 10.6 mu m and has low specular reflection. On the other hand, the invention also provides a simple preparation method of the flexible electromagnetic functional film, namely, the spin coating and cleaning steps of the photoresist sacrificial layer in the traditional forward stripping method are removed by silanization treatment on the surface of the substrate, so that the preparation steps are simpler and more convenient and efficient.
The present invention will be described in detail below with reference to the accompanying drawings.
Fig. 1 shows a schematic view of a partial structure of a laser infrared compatible flexible electromagnetic functional film according to an exemplary embodiment of the present invention.
As shown in fig. 1, according to an exemplary embodiment of the present invention, the laser infrared compatible flexible electromagnetic functional film includes: a flexible substrate 1, the surface of which has a micro-nano periodic structure; the metal reflecting layer 2 is formed on the micro-nano periodic structure and forms a phase super surface with the flexible substrate 1 so as to regulate and control the scattering direction of the first laser through a phase gradient; and an absorption layer 3 formed on the metal reflection layer 2 to absorb the second laser light alone or together with the metal reflection layer 2 and to realize low emissivity of the mid-far infrared band in cooperation with the metal reflection layer 2.
For realizing the effect of multi-band low detectability, for infrared detection, low emissivity in the middle-far infrared band (3-14 μm) is required; for laser detection, low reflectivity is required at the main detection wavelengths of the several lasers of 1.06 μm, 1.55 μm and 10.6 μm. The invention ensures that the obtained film has multiple laser wavelengths and infrared compatible functions and flexibility at the same time by selecting materials and design structures, and can realize low detection of three laser wavelengths of middle and far infrared wave bands (3-14 mu m) and 1.064 mu m, 1.55 mu m and 10.6 mu m and has low specular reflection.
The flexible substrate 1 of the present invention may be a material that is in a liquid state before curing and in a flexible state after curing, and specifically includes one of Polymethylsiloxane (PDMS), SEBS, and silicone rubber; the thickness of the flexible substrate 1 is 0.1-2 mm.
The material of the metal reflecting layer 2 of the invention can be a conventional reflecting layer material, and specifically comprises one of gold, silver, aluminum and copper; the thickness of the metal reflective layer 2 should be greater than the skin depth of the material itself, and may be specifically set according to the material selected.
The micro-nano periodic structure on the flexible substrate 1 is mainly designed based on the scattering direction regulation and control requirement of the first laser, wherein the first laser comprises laser with the wavelength of 10.6 mu m. By adjusting and controlling the scattering direction of the first laser, the specular reflectivity of the first laser can be reduced, and the invisible effect is achieved.
Specifically, through design optimization of the micro-nano periodic structure, the phase super surface formed by the flexible substrate 1 with the micro-nano periodic structure and the metal reflecting layer 2 can be a geometric phase super surface or a resonance phase super surface, and a phase gradient can be generated by regulating the geometric phase super surface or the resonance phase super surface, so that the regulation and control of the scattering direction of the first laser can be realized by utilizing a phase cancellation principle.
The absorption layer 3 of the present invention may be a single intrinsic absorption film layer or a plurality of photon absorption film layers, and the thickness of the absorption layer may be adjusted according to the type of the absorption layer. Wherein, the single-layer intrinsic absorption film layer realizes laser absorption of specific wavelength by using an intrinsic absorption mode, and the material of the single-layer intrinsic absorption film layer can comprise Fe 3 O 4 And InAs; the multilayer photon absorption film layer realizes the absorption of laser with specific wavelength by utilizing the interference diffraction between the multilayer film structure and the metal reflecting film, and the materials of the multilayer photon absorption film layer can comprise Ge/Ti/Ge photon crystal absorption film layer, znS/Ti/ZnS photon crystal absorption film layer and Al 2 O 3 /W/Al 2 O 3 One of the photon crystal absorption film layers. Wherein the above-mentioned multilayer photon absorption film layer is a multilayer film structure, and may be, for example, a multilayer film structure composed of Ge, ti and Ge, a multilayer film structure composed of ZnS, ti and ZnS, or Al 2 O 3 W and Al 2 O 3 A multi-layer film structure is formed.
Specifically, the second laser may include a laser having a wavelength of 1.064 μm and a laser having a wavelength of 1.55 μm. The absorption layer of the present invention absorbs strongly at both laser wavelengths of 1.064 μm and 1.55 μm.
According to the present invention, the film of the present invention also has a low emissivity in the mid-far infrared band, which requires that the absorption layer 3 has no loss in the mid-far infrared band having a wavelength range of 3 to 14 μm and the metal reflection layer 2 has low infrared radiation characteristics, otherwise the absorption layer having mid-far infrared loss affects the low infrared radiation characteristics of the metal reflection layer in the mid-far infrared band.
Thus, the flexible electromagnetic functional film compatible with laser infrared can realize low detectability of three laser wavelengths of middle-far infrared wave band (3-14 μm) and 1.064 μm, 1.55 μm and 10.6 μm.
The invention also provides a preparation method of the flexible electromagnetic functional film compatible with laser and infrared, and the spin coating and washing steps of the photoresist sacrificial layer in the traditional forward stripping method are removed by silanization treatment of the substrate surface, so that the preparation steps are simpler and more convenient and efficient.
According to an exemplary embodiment of the present invention, the above-described preparation method includes the following steps.
Step S1:
a microstructure is lithographically produced on the substrate, the microstructure having an inverse pattern corresponding to the micro-nano periodic structure.
Preferably, the substrate is a silicon wafer. After the micro-nano periodic structure design is completed, an inverse pattern corresponding to the micro-nano periodic structure can be formed on the substrate by using a traditional photolithography method.
Step S2: and silanizing the surface of the substrate with the microstructure by adopting polytrimethylchlorosilane.
The silanization treatment of the step is that the substrate with the microstructure is placed in a vacuum dryer for 30-120 min, a molecular film is formed by utilizing a polytrimethylchlorosilane dry method deposition, and after the substrate is taken out, the substrate can be washed by alcohol and dried by nitrogen for standby, so that the effect that the subsequent flexible substrate is convenient to demould can be realized.
Step S3:
pouring the liquid polymethylsiloxane mixed with the curing agent on the surface of the substrate treated in the step S2, and heating and curing under vacuum condition.
The liquid polymethylsiloxane mixed with the curing agent in the step is specifically prepared by mixing the liquid polymethylsiloxane and the curing agent according to the mass ratio of 10:1-3, uniformly mixing, and then removing bubbles in vacuum for 20-60 min.
The condition of heating and curing under the vacuum condition can be vacuum curing for 1-3 hours at 60-100 ℃, and the curing can be realized by adjusting according to the material condition.
Step S4:
and after cooling, removing the flexible substrate with the micro-nano periodic structure, and sequentially forming a metal reflecting layer and an absorbing layer on the micro-nano periodic structure of the flexible substrate to obtain the flexible electromagnetic functional film compatible with laser and infrared.
The step can select a proper film preparation method according to the required deposited metal reflecting layer and absorbing layer materials and thickness, such as magnetron sputtering deposition, chemical vapor deposition, evaporation deposition and the like.
The invention prepares the flexible substrate by silanization treatment on the surface of the substrate, and has the advantages of simple process, short preparation period, large-area preparation and low cost.
The invention will be further illustrated with reference to specific examples.
Example 1
The micro-nano periodic structure of the embodiment is composed of a checkerboard layout of orthogonal gratings, each 5 gratings are distributed in a group of orthogonal checkerboards to form a resonance phase super surface, and the period of each single grating is 4.5 μm, the width is 1.38 μm, and the height is 2.6 μm, as shown in fig. 1. And sequentially adopting magnetron sputtering to deposit a 50nm gold film as a metal reflecting layer and a 3-layer film comprising a germanium film 16nm, a titanium film 25nm and a germanium film 28nm as an absorption layer on the flexible substrate with the orthogonal grating.
The preparation process of the flexible substrate with the micro-nano periodic structure comprises the following steps:
photoetching a silicon wafer to obtain a microstructure, wherein the microstructure is provided with an inverse pattern corresponding to the micro-nano periodic structure; placing the polytrimethylchlorosilane pair and the silicon wafer with the microstructure in a vacuum dryer for 30min for silanization treatment, then taking out, flushing with alcohol and drying with nitrogen for later use; mixing Polymethylsiloxane (PDMS) and a curing agent according to the proportion of 10:1.5, and removing bubbles in vacuum for 30min after uniform mixing; pouring the mixed liquid PDMS on the surface of the silanized silicon wafer, and then carrying out vacuum curing for 2 hours at 80 ℃; and (3) removing the cured flexible substrate with the micro-nano periodic structure after furnace cooling.
As shown in fig. 2 and 3, the reflectivity of the flexible electromagnetic functional film processed by the embodiment at three laser wavelengths of 1.064 μm, 1.55 μm and 10.6 μm is respectively 0.019, 0.055 and 0.1; as shown in fig. 3, the average specular reflectance in the infrared band of 3 μm to 14 μm is 0.21; as shown in FIG. 4, the average emissivity in the infrared band of 3 μm to 14 μm is 0.13.
Example 2
The micro-nano periodic structure designed by the embodiment also comprises a checkerboard layout of orthogonal gratings, each 5 gratings are distributed in a group in an orthogonal checkerboard manner to form a resonance phase super-surface, and the period of each single grating is 4.5 μm, the width is 1.4 μm and the height is 2.4 μm. 50nm silver film is used as a metal reflecting layer, 140nm Fe 3 O 4 The layer acts as an absorbent layer.
The preparation method of the flexible substrate with the micro-nano periodic structure is consistent with the embodiment.
As shown in fig. 5, the calculated results of reflectance simulation at the laser wavelengths of 1.064 μm and 1.55 μm under TE polarization are 0.043 and 0.022, respectively, and the calculated results of reflectance simulation at the laser wavelengths of 1.064 μm and 1.55 μm under TM polarization are 0.055 and 0.011, respectively; as shown in FIG. 6, the simulation calculation result of the reflectivity of the laser wavelength of 10.6 μm is 0.002, and the simulation calculation result of the average specular reflectivity of the infrared wave band of 8 μm to 14 μm is 0.116; as shown in FIG. 7, the simulation calculation results of average emissivity under TE and TM polarizations of infrared bands of 8 μm to 14 μm are respectively 0.031 and 0.1.
The two embodiments show that the reflectivity of the flexible electromagnetic functional film designed and prepared by the invention at three laser wavelengths of 1.064 mu m, 1.55 mu m and 10.6 mu m is less than 0.1, so that the low detectability of the laser radar is realized; and simultaneously has emissivity smaller than 0.15 in the middle-far infrared band and low detectability in the middle-far infrared band. The film provided by the invention can realize compatible electromagnetic regulation and control of multiple laser wave bands and infrared rays at the same time, and provides a new thought for material design in the field; in addition, the flexible plastic material also has flexibility, can be produced in a large scale at low cost, and is easy to produce and apply in large scale.
In addition, the invention also adopts SEMS and silicon rubber flexible substrate, aluminum metal reflecting layer and copper metal reflecting layer, znS/Ti/ZnS photon crystal absorbing film layer and Al 2 O 3 /W/Al 2 O 3 Simulation calculation is carried out on different flexible electromagnetic functional films prepared by the photon crystal absorption film layer, and the results show that the obtained films have low emissivity in the middle-far infrared wave band (3-14 mu m) and low reflectivity at the main detection wavelengths of lasers of 1.06 mu m, 1.55 mu m and 10.6 mu m, and can realize the low detectability of the three laser wavelengths of the middle-far infrared wave band (3-14 mu m) and 1.064 mu m, 1.55 mu m and 10.6 mu m.
The above description of the embodiments is only intended to assist in understanding the method and core idea of the invention. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the invention can be made without departing from the principles of the invention and these modifications and adaptations are intended to be within the scope of the invention as defined in the following claims.
The invention is not limited to the specific embodiments described above. The invention extends to any novel one, or any novel combination, of the features disclosed in this specification, as well as to any novel one, or any novel combination, of the steps of the method or process disclosed.
Claims (9)
1. A laser infrared compatible flexible electromagnetic functional film, comprising:
a flexible substrate, the surface of which is provided with a micro-nano periodic structure;
the metal reflecting layer is formed on the surface of the micro-nano periodic structure and forms a phase super surface with the flexible substrate so as to regulate and control the scattering direction of the first laser through a phase gradient;
the absorption layer is formed on the surface of the metal reflecting layer, is used for absorbing the second laser singly or together with the metal reflecting layer, and is matched with the metal reflecting layer to realize low emissivity of the middle-far infrared band;
the absorption layer is a single-layer intrinsic absorption film layer or a multi-layer photon absorption film layer, the single-layer intrinsic absorption film layer singly realizes the absorption of laser with specific wavelength by using an intrinsic absorption mode, and the multi-layer photon absorption film layer jointly realizes the absorption of laser with specific wavelength by using interference diffraction between a multi-layer film structure and the metal reflection layer.
2. The flexible electromagnetic functional film compatible with laser infrared according to claim 1, wherein the material of the flexible substrate comprises one of polymethyl siloxane, SEBS and silicone rubber, and the thickness of the flexible substrate is 0.1-2 mm.
3. The laser infrared compatible flexible electromagnetic function film of claim 1 wherein the material of the metallic reflective layer comprises one of gold, silver, aluminum, and copper, the thickness of the metallic reflective layer being greater than the skin depth of the material.
4. The flexible electromagnetic functional film compatible with laser infrared of claim 1, wherein the first laser comprises a laser with a wavelength of 10.6 μm, and the micro-nano periodic structure is designed based on a scattering direction regulation requirement of the first laser.
5. The laser infrared compatible flexible electromagnetic functional film of claim 4 wherein the phase subsurface formed is a geometric phase subsurface or a resonant phase subsurface to produce the phase gradient.
6. The flexible electromagnetic functional film of claim 1, wherein the material of the single intrinsic absorption layer comprises Fe 3 O 4 And InAs, the multilayer photon absorptionThe film layer comprises a Ge/Ti/Ge photonic crystal absorption film layer, a ZnS/Ti/ZnS photonic crystal absorption film layer and Al 2 O 3 /W/Al 2 O 3 One of the photon crystal absorption film layers.
7. The flexible electromagnetic functional film of claim 1, wherein the second laser light includes a laser light having a wavelength of 1.064 μm and a laser light having a wavelength of 1.55 μm, and the mid-far infrared band has a wavelength range of 3 to 14 μm, wherein the absorption layer is lossless in the mid-far infrared band and the metal reflection layer has a low infrared radiation characteristic.
8. The method for preparing a flexible electromagnetic functional film compatible with laser infrared according to any one of claims 1 to 7, comprising:
step S1, photoetching and preparing a microstructure on a substrate, wherein the microstructure is provided with an inverse pattern corresponding to the micro-nano periodic structure;
s2, silanizing the surface of the substrate with the microstructure by adopting polytrimethylchlorosilane;
s3, pouring the liquid polymethylsiloxane mixed with the curing agent on the surface of the substrate treated in the step S2, and heating and curing under vacuum conditions;
and S4, removing the flexible substrate with the micro-nano periodic structure after furnace cooling, and sequentially forming a metal reflecting layer and an absorbing layer on the micro-nano periodic structure of the flexible substrate to obtain the laser infrared compatible flexible electromagnetic functional film.
9. The method for preparing the laser infrared compatible flexible electromagnetic functional film according to claim 8, wherein the substrate is a silicon wafer; the silanization treatment is that a substrate with a microstructure is placed in a vacuum dryer for 30-120 min and a molecular film is formed by dry deposition of polytrimethylchlorosilane; the liquid polymethylsiloxane mixed with the curing agent is prepared by mixing the liquid polymethylsiloxane and the curing agent according to the mass ratio of 10:1-3, and then removing bubbles in vacuum for 20-60 min after uniform mixing; the curing condition is vacuum curing for 1-3 h at 60-100 ℃.
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