CN101726769A - Long laminated sub-wave reflection-reducing structure and preparation method thereof - Google Patents
Long laminated sub-wave reflection-reducing structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a long laminated sub-wave reflection-reducing structure comprising a long sub-wave pattern and a medium layer, wherein the long sub-wave pattern is formed by etching the surface of a material with high refractive index required to reduce the reflection; the medium layer is formed by growing on the surface of the long sub-wave pattern by sediment; the long sub-wave pattern and the medium layer form a long laminated sub-wave structure; and the structural pattern is obtained according to the distribution of the refractive index of the used material and the wavelength and the angle range of incident light required to reduce the reflection. The long sub-wave reflection-reducing structure is applied to an active photoconducting device with high refractive index surface and can really and effectively achieve the transmission effect of a broadband wide angle. Compared with the prior art, the invention can effectively passivate the long laminated sub-wave reflection-reducing structure, reduce non-radiation recombination centers, inhibit the on-radiation recombination loss and effectively increase the corresponding performance of the photoconducting device; in addition, based on the sequential change of the refractive indexes of air, medium materials and substrate materials, by adopting the long laminated sub-wave reflection-reducing structure, the preparation difficulty can be weaken or better reflection-reducing performance can be obtained under the same condition.
Description
Technical field
The present invention relates to a kind of nanostructured, relating in particular to a kind of solar cell system, light display surface ballistic device etc. of being applicable to needs sub-wavelength antireflection structure of wide range wide-angle turnover light and preparation method thereof, belongs to micro-nano photonics field.
Background technology
Boundary reflection rate between the different refractivity material is the important parameter that influence receives light, sends light and transmit optical device and equipment performance, and extremely low boundary reflection rate is the important indicator that pursue in fields such as light demonstration, wide spectrum light source, solar cell, lens.Usually, adopt evaporation optics antireflective film to reduce the optical interface reflection.In order in wide-angle wide range scope, to reduce the boundary reflection rate as far as possible, need the blooming of design evaporation multilayer usually, and optical film material is unique not to the utmost.Complicated film structure not only makes the technological requirement of plated film own improve, and success ratio reduces; In use also to stand temperature, humidity variation even physical shock inevitably, optical interface by the blooming evaporation of multiple layers of different materials, because the difference of thermal expansivity, humidity coefficient and elastic modulus between the different materials, can cause the variation of film material refractive index, thickness inevitably, even cause the part blooming to come off badly, any variation, the capital causes thoroughly destroying even based on the decline of the blooming transmitance of relevant principle, thereby greatly influences the performance of corresponding device and equipment.
Sub-wavelength grate structure is the surface relief optical grating construction (as Fig. 1 a and Fig. 1 b shown in) of cycle less than lambda1-wavelength, and the refractive index of two media and corresponding sub-wavelength grate structure is respectively n
1, n
2, n
3, the grating cycle is Λ, grating vector
The incident angle of incident light and light wave wave vector in a vacuum is respectively θ
1And k, the condition that Zero-order diffractive takes place can be expressed as follows:
|n
1ksinθ
1+mG|＞n
ik，i＝1，2，3and m＝±1，±2，±3，......(1)，
By this formula as can be known, the condition of the incident light generation Zero-order diffractive of specific wavelength not only depends on the incident angle of incident light, and depends on the refractive index of material and the cycle of grating.When enough hour of the cycle of grating, the grating vector value is enough big, make above-mentioned inequality be no longer dependent on the wave vector of incident light and the size of incident angle, that is to say, in wide spectrum and polarizers of big angle scope, can obtain Zero-order diffractive, can obtain high antireflective effect, become the utmost point effective means that reduces the boundary reflection rate in the wide-angle wide range scope.
But aspect making, really utilize sub-wavelength structure to realize that the anti-reflection effect in the wide-angle wide range scope is also restricted.On the one hand, if directly adopt the etched way of boundary material, according to sub-wavelength Zero-order diffractive principle, can in wide-angle and wide range scope, obtain extremely low reflectivity undoubtedly, but the surface after the etching can produce a lot of defectives, particularly for nanostructured, specific surface area increases, what surface imperfection was brought is non-radiative compound, the existence of these non-radiative recombination centers causes greatly loss for the photoelectric device, the particularly active photoelectric device that constitute thus, become this kind structure can be really as the lethal factor of optical interface, raising corresponding device performance.Another kind of sub-wavelength structure is in the sub-wavelength nanostructured of original material surface growth graded index, adopts this kind method can not cause the non-radiative compound of surface undoubtedly, brings extra photoelectricity loss.But base material (such as semiconductor materials such as Si, GaAs, InP) for high index of refraction, the deielectric-coating material that may find refractive index to be complementary hardly with it, therefore, still there is bigger reflection loss undoubtedly in interface between high-index material and dielectric material, becomes the physical restriction of utilizing this kind method to realize utmost point antiradar reflectivity.
Summary of the invention
The objective of the invention is to propose a kind of novel sub-wavelength antireflection structure and preparation method thereof, to solve existing sub-wavelength structure in the restriction aspect the raising device overall performance.In wide spectrum and polarizers of big angle scope, reduce in the boundary reflection loss, do not increase the non-radiative recombination loss on surface, reduce the preparation difficulty of sub-wavelength structure.
The technical solution that realizes first purpose of the present invention is:
Long laminated sub-wave reflection-reducing structure, its structure graph calculates according to the index distribution of material therefor and the lambda1-wavelength and the angular range of the anti-reflection of wanting, and it is characterized in that: described long laminated sub-wave reflection-reducing structure comprises two parts: wherein a part is the sub-wavelength figure that forms by etching on the high-index material that needs anti-reflection self surface; Another part is at the dielectric layer of aforementioned sub-wavelength patterned surface through deposition growing, and the two is integrated and constitutes long laminated sub-wave reflection-reducing structure.
Further, described dielectric layer is uniform single-layer dielectric film, multilayer dielectric film, or the deielectric-coating of graded index, or the medium nanostructured of graded index, and the material of its dielectric layer is determined according to the refractive index of the material of required anti-reflection.
Further, described sub-wavelength figure is for constituting the figure of gradually changed refractive index.
Another object of the present invention will be achieved through the following technical solutions:
The preparation method of long laminated sub-wave reflection-reducing structure, its characterization step comprises:
I, according to the lambda1-wavelength and the angular range calculation Design laminated sub-wave structure of want anti-reflection, comprise the dielectric layer sub-wavelength figure that etched sub-wavelength figure and deposition form on the high-index material of required anti-reflection;
II, on the high-index material of required anti-reflection, form sub-wavelength structure figure mask, and by being etched in the sub-wavelength figure that formation has corresponding depth-to-width ratio on the substrate;
III, removal mask and clean this have the high index of refraction backing material of sub-wavelength figure;
IV, the somatomedin layer of taking advantage of a situation on substrate sub-wavelength figure, described deielectric-coating material and shape and structure obtain according to step I analog computation.
Further, the preparation method of aforesaid long laminated sub-wave reflection-reducing structure, backing material described in the Step II is the maximum refractive index that refractive index n is higher than the nature dielectric material, as TiO
2Refractive index 2.6; And the method that forms the figure mask described in the Step II comprises electron beam exposure, relevant photoetching and self assembly, and engraving method wherein comprises reactive ion etching, inductively coupled plasma etching, electron cyclotron resonace etching and wet etching.
Further, the preparation method of aforesaid sub-wavelength antireflection structure, the mode that deielectric-coating described in the step IV covers comprises magnetron sputtering, pulsed laser deposition, thermal evaporation, electron beam evaporation, ald, and plasma activated chemical vapour deposition.
Substantive distinguishing features of sub-wavelength antireflection structure of the present invention and preparation method thereof and significant advantage are mainly reflected in:
Adopt the sub-wavelength antireflection structure of lamination form to replace original sub-monolayer wavelength structure, dielectric layer part on the one hand effectively passivation based on the sub-wavelength antireflection structure of etching formation, significantly reduce non-radiative recombination center, suppress non-radiative recombination losses, make this sub-wavelength antireflection structure can really become the interface of active photoelectric device, effectively increase corresponding light electrical part performance; On the other hand,, adopt long laminated sub-wave reflection-reducing structure can also weaken the preparation difficulty, perhaps under identical preparation situation, obtain better anti-reflection performance in view of air, dielectric material and backing material refractive index change successively.
Description of drawings
Fig. 1 is the laminated sub-wave structure first synoptic diagram that obtains through etching on the material of the required anti-reflection effect of high index of refraction, and wherein Fig. 1 a is a pyramid structure, and Fig. 1 b is a wedge structure;
Fig. 2 is the present invention further passes through the somatomedin material preparation on the sub-wavelength antireflection structure of optical interface material a long laminated sub-wave reflection-reducing structure, wherein
Fig. 2 is complete long laminated sub-wave reflection-reducing structure synoptic diagram; Comprise: (2a) first's etching forms pyramid, and second portion still forms pyramid for the uniform deielectric-coating of deposition; (2b) first is that etching forms wedge structure, and second portion uniform deposition deielectric-coating still forms wedge structure; (2c) first is that etching forms wedge structure, and second portion uniform deposition deielectric-coating finally forms the laminated sub-wave structure of pyramid; (2d) first is the wedge structure that etching forms, and second portion is the deielectric-coating of the thicker graded index of deposition, forms the long laminated sub-wave reflection-reducing structure of pyramid
Fig. 3 is that the different refractivity medium is to sub-wavelength antireflection structure reflectivity Effect on Performance synoptic diagram;
Fig. 4 a is the reflectance varies synoptic diagram of laminated sub-wave structure under the different incidence angles degree of medium refraction index n=1.63;
Fig. 4 b is the reflectance varies synoptic diagram of laminated sub-wave structure under the different incidence angles degree of medium refraction index n=1.
Embodiment
For breaking through existing sub-wavelength structure in the restriction aspect the raising device overall performance, the present invention has disclosed a kind of long laminated sub-wave reflection-reducing structure, the shape of this sub-wavelength antireflection structure calculates according to the lambda1-wavelength and the angular range of want anti-reflection, it is characterized in that: described long laminated sub-wave reflection-reducing structure comprises two parts: first forms the sub-wavelength figure on the high-index material that needs anti-reflection self surface by etching; Second portion be at first's sub-wavelength patterned surface through the dielectric layer of deposition growing once more, the two is integrated and constitutes long laminated sub-wave reflection-reducing structure.
This sub-wavelength antireflection structure can prepare by the following technical programs:
At first need to select the backing material of sub-wavelength antireflection structure, this material is meant the boundary material that needs the wide range wide to go out incident light, is meant that especially refractive index is higher than the boundary material of general nature medium (n 〉=2.6).
Then according to the lambda1-wavelength and the corresponding sub-wavelength structure of angular range calculation Design of want anti-reflection, comprise etched sub-wavelength antireflection structure on the substrate and the sub-wavelength anti-reflection dielectric layer that will grow;
Then adopt suitable method on backing material, to form sub-wavelength structure figure mask, and under this figure mask, on original substrate, form sub-wavelength structure with certain depth-to-width ratio by engraving method;
Then carry out etching once more to finishing the backing material that the etching rear surface has sub-wavelength structure, removing the mask material on the substrate, and water or organic solvent clean up substrate;
Utilize deposition or alternate manner on the graph substrate of this sub-wavelength structure, to prepare corresponding sub-wavelength structure dielectric layer at last, finish the sub-wavelength antireflection structure of rhythmo structure.
Each step possibility of above preparation method and should be noted that part comprises:
1, the refractive index of selected deielectric-coating is between backing material and air, and Fig. 3 provides and utilizes rigorous couple-wave analysis method simulation, and identical geometry but different refractivity medium are to long laminated sub-wave reflection-reducing structure reflectivity Effect on Performance synoptic diagram.As seen,, increase the refractive index of dielectric layer, can effectively in wide spectral range, reduce the boundary reflection rate for the optical interface material of high index of refraction.Particularly for the precipitous high-index regions of dispersion relation, effect is more obvious.
2, carry out sub-wavelength structure when design, also needing composite factors such as the deielectric-coating material taking high-index material into consideration, will deposit and air;
3, the wherein formation of sub-wavelength structure mask can realize by electron beam exposure, relevant photoetching or various self assembly mode;
4, wherein said etching method for making, no matter be on substrate, to form sub-wavelength structure, still remove mask, difference according to mask material, can adopt these conventional technological means of wet etching or dry etching to realize, can remove the high-index material that does not injure sub-wavelength structure in the mask material behind the sub-wavelength structure completely and be as the criterion as long as satisfy on high-index material to form;
5, about described dielectric layer, according to the design needs can be deielectric-coating, also can be medium nano-pillar or nanotube, as long as passivation substrate sub-wavelength nanostructured well guarantees that simultaneously its refractive index satisfies refractive index used in the sub-wavelength design process and gets final product.Its preparation method can be the growing and preparing mode of plurality of devices such as magnetron sputtering, pulsed laser deposition, thermal evaporation, electron beam evaporation, ald, plasma activated chemical vapour deposition and other nano-pillar, nanotube according to actual needs.
Long laminated sub-wave reflection-reducing structure shown in Fig. 2 a to Fig. 2 b, wherein the long laminated sub-wave reflection-reducing structure shown in Fig. 2 a comprises: the deielectric-coating of high index of refraction backing material uniform deposition on pyramidal sub-wavelength antireflection structure that etching forms and this structure; Long laminated sub-wave reflection-reducing structure shown in Fig. 2 b comprises: the deielectric-coating of high index of refraction backing material uniform deposition on the sub-wavelength antireflection structure of the wedge shape that etching forms and this structure still forms the laminated sub-wave structure of wedge shape; Long laminated sub-wave reflection-reducing structure shown in Fig. 2 c comprises: the high index of refraction backing material is the thicker deielectric-coating of deposition on the sub-wavelength antireflection structure of the wedge shape that etching forms and this structure, finally forms pyramidal long laminated sub-wave reflection-reducing structure; Long laminated sub-wave reflection-reducing structure shown in Fig. 2 d comprises: the high index of refraction backing material finally forms pyramidal long laminated sub-wave reflection-reducing structure through the sub-wavelength antireflection structure and the deielectric-coating that deposits thicker graded index of the wedge shape of etching formation
For another example the reflectance varies curve shown in Fig. 4 a and Fig. 4 b as seen, for having the sub-wavelength structure of identical geometry, the laminated sub-wave structure of high index can obtain lower reflectivity in wide-angle and wide range scope.For Fig. 4 a and 4b, the geometric configuration of its sub-wavelength antireflection structure all is the taper shape of hexagonal solid matter, and wherein the conical bottom diameter is 100nm, the circular cone arrangement cycle is 200nm, cone height is 500nm, when dielectric layer is air, is equivalent to the just sub-wavelength antireflection structure of individual layer; Its reflectance curve in wide-angle and wide range scope is shown in Fig. 4 b; When the refractive index of dielectric layer is n=1.63, its reflectance curve in wide-angle and wide range scope is shown in Fig. 4 a.As can be seen, under identical preparation condition, long laminated sub-wave reflection-reducing structure can more effectively reduce the boundary reflection rate really in wide-angle and wide range scope.
The advantage of sub-wavelength antireflection structure of the present invention and method for making thereof is that one side is passivation sub-wavelength antireflection structure effectively, reduces non-radiative recombination center, suppresses non-radiative recombination losses, effectively increases corresponding light electrical part performance; Change successively in view of air, dielectric material and backing material refractive index on the other hand, so adopt long laminated sub-wave reflection-reducing structure will weaken the preparation difficulty undoubtedly, perhaps in identical preparation situation, obtain better anti-reflection performance.
Claims (6)
1. long laminated sub-wave reflection-reducing structure, its structure graph calculates according to the index distribution of material therefor and the lambda1-wavelength and the angular range of the anti-reflection of wanting, and it is characterized in that: described long laminated sub-wave reflection-reducing structure comprises two parts: wherein a part is the sub-wavelength figure that forms by etching on the high-index material that needs anti-reflection self surface; Another part is at the dielectric layer of aforementioned sub-wavelength patterned surface through deposition growing, and the two is integrated and constitutes long laminated sub-wave reflection-reducing structure.
2. long laminated sub-wave reflection-reducing structure according to claim 1, it is characterized in that: described dielectric layer is uniform single-layer dielectric film, multilayer dielectric film, or the deielectric-coating of graded index, again or the dielectric material nanostructured, the material of its dielectric layer is determined according to the refractive index of the material of required anti-reflection.
3. long laminated sub-wave reflection-reducing structure according to claim 1 is characterized in that: described sub-wavelength figure is for constituting the figure of gradually changed refractive index.
4. the preparation method of the described long laminated sub-wave reflection-reducing structure of claim 1, its characterization step comprises:
I, according to the lambda1-wavelength and the angular range calculation Design laminated sub-wave structure of want anti-reflection, comprise the dielectric layer sub-wavelength figure that etched sub-wavelength figure and deposition form on the high-index material of required anti-reflection;
II, on the high-index material of required anti-reflection, form sub-wavelength structure figure mask, and by being etched in the sub-wavelength figure that formation has corresponding depth-to-width ratio on the substrate;
III, removal mask and clean this have the high index of refraction backing material of sub-wavelength figure;
IV, the somatomedin layer of taking advantage of a situation on substrate sub-wavelength figure, described deielectric-coating material and shape and structure obtain according to step I analog computation.
5. the preparation method of long laminated sub-wave reflection-reducing structure according to claim 4, it is characterized in that: the method that forms the figure mask described in the Step II comprises electron beam exposure, relevant photoetching and self assembly, and engraving method wherein comprises reactive ion etching, inductively coupled plasma etching, electron cyclotron resonace etching and wet etching.
6. the preparation method of long laminated sub-wave reflection-reducing structure according to claim 4, it is characterized in that: the mode of the growth of deielectric-coating described in the step IV comprises magnetron sputtering, pulsed laser deposition, thermal evaporation, electron beam evaporation, ald, and plasma activated chemical vapour deposition and self assembly.
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| RU2796501C1 (en) * | 2021-12-30 | 2023-05-24 | федеральное государственное бюджетное образовательное учреждение высшего образования "Московский государственный технический университет имени Н.Э. Баумана (национальный исследовательский университет)" (МГТУ им. Н.Э. Баумана) | METHOD FOR ANTIREFLECTION OF ENDS OF ACTIVE Cr:ZnS WAVEGUIDES BASED ON SURFACE MICROSTRUCTURING |
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