CN108699248B - 硅氮烷-硅氧烷无规共聚物、它们的生产和用途 - Google Patents

硅氮烷-硅氧烷无规共聚物、它们的生产和用途 Download PDF

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CN108699248B
CN108699248B CN201780010344.2A CN201780010344A CN108699248B CN 108699248 B CN108699248 B CN 108699248B CN 201780010344 A CN201780010344 A CN 201780010344A CN 108699248 B CN108699248 B CN 108699248B
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CN108699248A (zh
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R·格罗腾穆勒
A·卡萨斯卡尔西亚-明吉利安
北文雄
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Wisdom Buy
Merck Patent GmbH
AZ Electronic Materials Japan Co Ltd
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Merck Patent GmbH
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/54—Nitrogen-containing linkages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/045—Polysiloxanes containing less than 25 silicon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Electroluminescent Light Sources (AREA)
CN201780010344.2A 2016-02-15 2017-01-19 硅氮烷-硅氧烷无规共聚物、它们的生产和用途 Active CN108699248B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16000371.1 2016-02-15
EP16000371 2016-02-15
PCT/EP2017/000059 WO2017140407A1 (en) 2016-02-15 2017-01-19 Silazane-siloxane random copolymers, their production and use

Publications (2)

Publication Number Publication Date
CN108699248A CN108699248A (zh) 2018-10-23
CN108699248B true CN108699248B (zh) 2021-03-26

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Country Status (9)

Country Link
US (1) US10927220B2 (enExample)
EP (1) EP3417002B1 (enExample)
JP (1) JP6843875B2 (enExample)
KR (1) KR20180113579A (enExample)
CN (1) CN108699248B (enExample)
MY (1) MY190543A (enExample)
SG (1) SG11201806774XA (enExample)
TW (1) TWI713694B (enExample)
WO (1) WO2017140407A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11888095B2 (en) 2017-10-13 2024-01-30 Merck Patent Gmbh Manufacturing process for an optoelectronic device
WO2019233945A1 (en) * 2018-06-05 2019-12-12 Merck Patent Gmbh Method and polymer composition for preparing optoelectronic devices
JP7103245B2 (ja) * 2019-01-29 2022-07-20 信越化学工業株式会社 ポリシロキサザン化合物およびその製造方法並びにこれを含む組成物および硬化物
JP7371592B2 (ja) 2019-09-27 2023-10-31 信越化学工業株式会社 アルコキシシリル基を有するポリシロキサザン化合物およびその製造方法、並びにこれを含む組成物および硬化物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2200106A2 (en) * 2008-12-19 2010-06-23 Samsung Electronics Co., Ltd. Gas barrier thin film, electronic device comprising the same, and method of preparing the gas barrier thin film
CN102585516A (zh) * 2011-01-07 2012-07-18 第一毛织株式会社 用于形成硅基绝缘层的组合物及其制造方法、硅基绝缘层及其制造方法
CN104812543A (zh) * 2012-07-03 2015-07-29 伯宁布什集团有限公司 硅基高性能涂料组合物

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145815A (ja) 1984-01-10 1985-08-01 Shin Etsu Chem Co Ltd 離型剤組成物
US4678688A (en) * 1983-12-28 1987-07-07 Shin-Etsu Chemical Co., Ltd. Method for forming a surface film of cured organosilicon polymer on a substrate surface
JPH04136278A (ja) * 1990-09-20 1992-05-11 Shin Etsu Chem Co Ltd 基布処理剤組成物及びそれを用いたパラグライダー用キャノピー素材
DE69715178T2 (de) * 1996-12-27 2003-01-30 Tonengeneral Sekiyu K.K., Tokio/Tokyo Polyorganosiloxane und verfahren zu deren herstellung
US6274924B1 (en) 1998-11-05 2001-08-14 Lumileds Lighting, U.S. Llc Surface mountable LED package
US6204523B1 (en) 1998-11-06 2001-03-20 Lumileds Lighting, U.S., Llc High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
US6534184B2 (en) 2001-02-26 2003-03-18 Kion Corporation Polysilazane/polysiloxane block copolymers
JP2004077874A (ja) 2002-08-20 2004-03-11 Clariant (Japan) Kk 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法
US9935246B2 (en) * 2013-12-30 2018-04-03 Cree, Inc. Silazane-containing materials for light emitting diodes
SG11201803485UA (en) * 2015-10-30 2018-05-30 Az Electronic Mat Luxembourg Sarl Method for producing silazane-siloxane copolymers and the use of such copolymers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2200106A2 (en) * 2008-12-19 2010-06-23 Samsung Electronics Co., Ltd. Gas barrier thin film, electronic device comprising the same, and method of preparing the gas barrier thin film
CN102585516A (zh) * 2011-01-07 2012-07-18 第一毛织株式会社 用于形成硅基绝缘层的组合物及其制造方法、硅基绝缘层及其制造方法
CN104812543A (zh) * 2012-07-03 2015-07-29 伯宁布什集团有限公司 硅基高性能涂料组合物

Also Published As

Publication number Publication date
TWI713694B (zh) 2020-12-21
US20200255599A1 (en) 2020-08-13
EP3417002B1 (en) 2019-11-13
TW201731921A (zh) 2017-09-16
SG11201806774XA (en) 2018-09-27
KR20180113579A (ko) 2018-10-16
US10927220B2 (en) 2021-02-23
JP6843875B2 (ja) 2021-03-17
WO2017140407A1 (en) 2017-08-24
EP3417002A1 (en) 2018-12-26
CN108699248A (zh) 2018-10-23
JP2019505645A (ja) 2019-02-28
MY190543A (en) 2022-04-27

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