CN108695410A - 一种n型多晶硅太阳能电池及其制造方法 - Google Patents
一种n型多晶硅太阳能电池及其制造方法 Download PDFInfo
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- CN108695410A CN108695410A CN201810594962.2A CN201810594962A CN108695410A CN 108695410 A CN108695410 A CN 108695410A CN 201810594962 A CN201810594962 A CN 201810594962A CN 108695410 A CN108695410 A CN 108695410A
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 150
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 146
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000009792 diffusion process Methods 0.000 claims abstract description 99
- 238000002161 passivation Methods 0.000 claims abstract description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052709 silver Inorganic materials 0.000 claims abstract description 24
- 239000004332 silver Substances 0.000 claims abstract description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 115
- 238000010438 heat treatment Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000002207 thermal evaporation Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (9)
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CN201810594962.2A CN108695410B (zh) | 2018-06-11 | 2018-06-11 | 一种n型多晶硅太阳能电池及其制造方法 |
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CN201810594962.2A CN108695410B (zh) | 2018-06-11 | 2018-06-11 | 一种n型多晶硅太阳能电池及其制造方法 |
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CN108695410A true CN108695410A (zh) | 2018-10-23 |
CN108695410B CN108695410B (zh) | 2020-08-04 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112259635A (zh) * | 2019-07-01 | 2021-01-22 | 原子能和替代能源委员会 | 钝化方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5189297A (en) * | 1988-08-29 | 1993-02-23 | Santa Barbara Research Center | Planar double-layer heterojunction HgCdTe photodiodes and methods for fabricating same |
CN104134707A (zh) * | 2014-08-11 | 2014-11-05 | 常州天合光能有限公司 | 有利于减少正面栅线数目的异质结电池及其制备方法 |
EP2819181A1 (en) * | 2013-06-25 | 2014-12-31 | Solexel, Inc. | Laser annealing applications in high-efficiency solar cells |
CN205564769U (zh) * | 2016-04-07 | 2016-09-07 | 乐叶光伏科技有限公司 | 一种具有透明电极的p型晶体硅太阳能电池 |
CN107195699A (zh) * | 2017-07-12 | 2017-09-22 | 泰州中来光电科技有限公司 | 一种钝化接触太阳能电池及制备方法 |
-
2018
- 2018-06-11 CN CN201810594962.2A patent/CN108695410B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5189297A (en) * | 1988-08-29 | 1993-02-23 | Santa Barbara Research Center | Planar double-layer heterojunction HgCdTe photodiodes and methods for fabricating same |
EP2819181A1 (en) * | 2013-06-25 | 2014-12-31 | Solexel, Inc. | Laser annealing applications in high-efficiency solar cells |
CN104134707A (zh) * | 2014-08-11 | 2014-11-05 | 常州天合光能有限公司 | 有利于减少正面栅线数目的异质结电池及其制备方法 |
CN205564769U (zh) * | 2016-04-07 | 2016-09-07 | 乐叶光伏科技有限公司 | 一种具有透明电极的p型晶体硅太阳能电池 |
CN107195699A (zh) * | 2017-07-12 | 2017-09-22 | 泰州中来光电科技有限公司 | 一种钝化接触太阳能电池及制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112259635A (zh) * | 2019-07-01 | 2021-01-22 | 原子能和替代能源委员会 | 钝化方法 |
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CN108695410B (zh) | 2020-08-04 |
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Effective date of registration: 20200707 Address after: 528200 workshop 1-3, Tianfu science and technology center, shangyuanxi Industrial Zone, Xianan Er, Guicheng Street, Nanhai District, Foshan City, Guangdong Province Applicant after: GUANGDONG DEJIU SOLAR NEW ENERGY Co.,Ltd. Address before: No. 1701 Binhe Road, Suzhou High-tech Zone, Suzhou City, Jiangsu Province Applicant before: SUZHOU BAOLAN ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210125 Address after: Room 1702, block 1, phase 6, Tianan Nanhai digital new town, 12 Jianping Road, Guicheng Street, Nanhai District, Foshan City, Guangdong Province, 528000 Patentee after: Baoneng holding (Foshan) Co.,Ltd. Address before: 528200 factory building 1-3, Tianfu science and technology center, shangyuanxi Industrial Zone, Xianan Er, Guicheng Street, Nanhai District, Foshan City, Guangdong Province Patentee before: GUANGDONG DEJIU SOLAR NEW ENERGY Co.,Ltd. |
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