CN108682717A - A kind of preparation method of diamond position sensitive detector - Google Patents
A kind of preparation method of diamond position sensitive detector Download PDFInfo
- Publication number
- CN108682717A CN108682717A CN201810582199.1A CN201810582199A CN108682717A CN 108682717 A CN108682717 A CN 108682717A CN 201810582199 A CN201810582199 A CN 201810582199A CN 108682717 A CN108682717 A CN 108682717A
- Authority
- CN
- China
- Prior art keywords
- diamond
- electrode
- sensitive detector
- position sensitive
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 90
- 239000010432 diamond Substances 0.000 title claims abstract description 90
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000010931 gold Substances 0.000 claims abstract description 40
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052737 gold Inorganic materials 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 238000006396 nitration reaction Methods 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 6
- 238000009835 boiling Methods 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 239000005357 flat glass Substances 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000005477 sputtering target Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 235000019441 ethanol Nutrition 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000002245 particle Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 231100000289 photo-effect Toxicity 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 241001507928 Aria Species 0.000 description 1
- 235000004494 Sorbus aria Nutrition 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Measurement Of Radiation (AREA)
Abstract
A kind of preparation method of diamond position sensitive detector, the invention belongs to detector field, the electrode that it will solve existing two-dimension position-sensitive detector acts on single, the big problem in gap between adjacent electrode.Preparation method：One, single-crystal CVD diamond is placed in processing in the nitration mixture bath of boiling, the diamond after being cleaned；Two, mask plate is fixed on to the surface of diamond, the back side of diamond is pasted on the glass sheet；Three, diamond is placed in vacuum magnetron sputtering coating film system, and using magnetron sputtering deposition gold electrode, four central angles of deposition growing are the gold electrode of 90 ° of sector structures；Four, mask plate is detached；Five, the diamond for being coated with gold electrode is fixed on pad, electrode is connect with conducting wire with strip electrode on pcb pads respectively.The present invention is prepared for a kind of novel diamond position sensitive detector, has many advantages, such as that electrode structure is simple, electrode area is big, inter-electrode gap is small and particle beams transmitance is high.
Description
Technical field
The invention belongs to detector fields, and in particular to a kind of preparation method of metal sites sensitive detector.
Background technology
Position sensitive detector refers to that a kind of data-signal of output is presented with particle beam (including light beam) application position
Therefore the semiconductor devices of certain relationship, this kind of detector are normally used for the monitoring of synchrotron radiation X-ray beam, radioactivity harness prison
The fields such as survey and charged particle beam monitoring.Currently, common plan-position sensitive detector is mostly former based on lateral photo effect
Reason, lateral photo effect refer to being parallel to the one of knot when P-N junction or the one side of metal-semiconductor junction are by uneven irradiation
There is the phenomenon that potential difference in face.This kind of detector has four side type structures, two surface structures, two-dimentional pillow-type structure or square knot more
Structure etc..
Diamond becomes a kind of excellent semi-conducting material by properties such as its excellent electricity, light, heat, mechanics.But due to
Diamond is difficult to carry out n-type doping, so current diamond position sensitive detector is mostly based under lateral photo effect
What metal-diamond knot carried out.
Invention content
The invention solves the effect of the electrode of existing two-dimension position-sensitive detector is single, gap is big between adjacent electrode asks
Topic, and a kind of preparation method of diamond position sensitive detector is provided.
The preparation method of diamond position sensitive detector of the present invention is realized according to the following steps：
One, by single-crystal CVD diamond be placed in boiling nitration mixture bath in handle 30~60min, then successively deionized water,
It is cleaned by ultrasonic 5~30min respectively in absolute ethyl alcohol and acetone, the diamond after being cleaned；
Two, by tool, there are four the stainless steel mask plates that central angle is 90 ° of sector structures to fix diamond after cleaning
Surface, four central angles are that 90 ° of sector structures form circle, and the back side of the diamond after cleaning is pasted on the glass sheet, is obtained
Diamond with sheet glass；
Three, Au targets are installed to magnetic controlled sputtering target, the diamond with sheet glass that step 2 obtains is placed in vacuum
On warm table in magnetron sputtering coating system, start vacuum system will be evacuated in vacuum warehouse so that vacuum degree be 1.0 ×
10-4~8.0 × 10-4Pa, using magnetron sputtering method, under the protection of Ar atmosphere, control Ar throughputs are 10~30sccm, control
Sputtering power processed is that 30~50W carries out deposition gold electrode, and deposition growing is the gold electrode of 90 ° of sector structures there are four central angle,
Obtaining sputtering has the diamond of electrode；
Four, stainless steel mask plate is separated from the diamond that sputtering has electrode, obtains the Buddha's warrior attendant for being coated with gold electrode
Stone；
Five, the diamond for being coated with gold electrode is fixed on pad, four gold electrodes use conducting wire and four on pad respectively
A strip electrode connection, obtains the diamond position sensitive detector of the two-dimension plane structure with four electrodes.
The present invention is when light beam through electrode, since area difference of the light irradiation in two lateral electrodes causes at Different electrodes
Carrier concentration is different, and then there are potential differences in metal-semiconductor junction.The present invention is prepared for a kind of novel diamond position spirit
Quick detector has many advantages, such as that electrode structure is simple, particle beams transmitance is high.
Diamond position sensitive detector of the present invention includes mainly following advantageous effect：
1, it is 90 ° of sector structures, simple in structure, the electrode of diamond surface that the electrode of diamond surface, which is four central angles,
Not only collect photo-generated carrier, moreover it is possible to form metal-semiconductor junction with diamond, and then form built in field, promote carrier
Diffusion drift；
2, electrode area is big, covers diamond surface substantially, enhances collection efficiency of the electrode to carrier, and between electrode
Gap is only 0~1mm, is such as used for White-beam Synchrotron Radiation light beam detection field, there is superior sensitivity and transmitance.
Description of the drawings
Fig. 1 is the structural schematic diagram of diamond position sensitive detector of the present invention；
Fig. 2 is diamond position sensitive detector current signal under forward and reverse bias in test process under different biass
Difference and light-beam position graph of relation, wherein ■ represent IU=100v+IU=-100v, ● represent IU=80v+IU=-80v, ▲ represent IU=60v
+IU=-60v, ▼ represents IU=40v+IU=-40v, ◆ represent IU=20v+IU=-20v。
Specific implementation mode
Specific implementation mode one：The preparation method of present embodiment diamond position sensitive detector is real according to the following steps
It applies：
One, by single-crystal CVD diamond be placed in boiling nitration mixture bath in handle 30~60min, then successively deionized water,
It is cleaned by ultrasonic 5~30min respectively in absolute ethyl alcohol and acetone, the diamond after being cleaned；
Two, by tool, there are four the stainless steel mask plates that central angle is 90 ° of sector structures to fix diamond after cleaning
Surface, four central angles are that 90 ° of sector structures form circle, and the back side of the diamond after cleaning is pasted on the glass sheet, is obtained
Diamond with sheet glass；
Three, Au targets are installed to magnetic controlled sputtering target, the diamond with sheet glass that step 2 obtains is placed in vacuum
On warm table in magnetron sputtering coating system, start vacuum system will be evacuated in vacuum warehouse so that vacuum degree be 1.0 ×
10-4~8.0 × 10-4Pa, using magnetron sputtering method, under the protection of Ar atmosphere, control Ar throughputs are 10~30sccm, control
Sputtering power processed is that 30~50W carries out deposition gold electrode, and deposition growing is the gold electrode of 90 ° of sector structures there are four central angle,
Obtaining sputtering has the diamond of electrode；
Four, stainless steel mask plate is separated from the diamond that sputtering has electrode, obtains the Buddha's warrior attendant for being coated with gold electrode
Stone；
Five, the diamond for being coated with gold electrode is fixed on pad, four gold electrodes use conducting wire and four on pad respectively
A strip electrode connection, obtains the diamond position sensitive detector of the two-dimension plane structure with four electrodes.
Present embodiment is contacted by metal-diamond-metal, is prepared for a kind of position sensitive detector, i.e. output electricity
Flowing signal, there are certain linear relationships with beam position.
Present embodiment metallographic is higher than diamond to the surface contact potential of probe, according to the pass of work function and contact potential
System, the fermi level for being derived by gold are higher than diamond.When gold is with diamond contact, the electronic carrier in gold is to diamond
Diffusion forms depletion layer in diamond side, and when gold is equal with the fermi level of diamond, the diffusion of electronics stops, body
System reaches dynamic equilibrium.The fermi level of diamond gradually rises, and energy band bends in depletion layer area, and interface energy level is bright
It is aobvious to be less than inside diamond, so forming potential barrier, that is, built in field.After applying illumination, light beam through electrode is generated in depletion layer
Electron-hole pair, electronics carry direction of an electric field drift, and hole drifts about towards direction of an electric field, this results in barrier height to reduce, energy
Band bending degree reduces, but in the electrode zone of no light, barrier height does not reduce.When a forward bias is applied, voltage
Direction is consistent with built in field direction；When a reverse bias is applied, voltage direction it is opposite with built in field direction thus generate
Photo-signal has differences in size.With the change of light position, current signal the change of divergence.Current signal difference with
Linear relationship is presented in position.
Specific implementation mode two：The present embodiment is different from the first embodiment in that the single-crystal CVD described in step 1
The size of diamond is 3.0 × 3.0mm2, thickness 0.5mm.
Specific implementation mode three：The present embodiment is different from the first and the second embodiment in that the nitration mixture in step 1 is
Volume ratio is 1:1:The perchloric acid and mass fraction that nitric acid that 1 mass fraction is 68%, mass fraction are 70% are 98% sulphur
The mixed acid of acid.
Specific implementation mode four：In step 1 unlike one of present embodiment and specific implementation mode one to three with
The power ultrasonic of 300~600W cleans 15~30min.
Specific implementation mode five：Start in step 3 unlike one of present embodiment and specific implementation mode one to four
Vacuum system will be evacuated in vacuum warehouse so that vacuum degree is 4.5 × 10-4Pa。
Specific implementation mode six：Step 3 uses magnetic unlike one of present embodiment and specific implementation mode one to five
Control sputtering method, under the protection of Ar gas atmosphere, control Ar throughputs be 20sccm, control sputtering power for 40W carry out deposition 1~
2min。
Specific implementation mode seven：Gold electricity in step 3 unlike one of present embodiment and specific implementation mode one to six
The thickness of pole is 20~50nm.
Specific implementation mode eight：It is adjacent in step 3 unlike one of present embodiment and specific implementation mode one to seven
The spacing of gold electrode is 0~1mm.
Specific implementation mode nine：Step 5 unlike one of present embodiment and specific implementation mode one to eight will be coated with
The diamond of gold electrode is fixed on elargol on pad.
Specific implementation mode ten：Unlike one of present embodiment and specific implementation mode one to nine described in step 5
Conducting wire be silver wire.
Embodiment：The preparation method of the present embodiment diamond position sensitive detector is implemented according to the following steps：
One, it is 3.0 × 3.0mm by size2, thickness be 0.5mm single-crystal CVD diamond be placed in boiling nitration mixture bath
Interior processing 40min, is then cleaned by ultrasonic 22.5min, after obtaining cleaning respectively in deionized water, absolute ethyl alcohol and acetone successively
Diamond, wherein mixed strong acids be by volume ratio be 1:1:1 nitric acid：Perchloric acid：Sulfuric acid mixes；
Two, by tool, there are four the stainless steel mask plates that central angle is 90 ° of sector structures to fix diamond after cleaning
Surface, four central angles are that 90 ° of sector structures form circle, and the back side of the diamond after cleaning is pasted onto 2.0 × 6.0cm2's
On sheet glass, the diamond with sheet glass is obtained；
Three, Au targets are installed to magnetic controlled sputtering target, the diamond with sheet glass that step 2 obtains is placed in vacuum
On warm table in magnetron sputtering coating system, start vacuum system will be evacuated in vacuum warehouse so that vacuum degree be 4.5 ×
10-4Pa, using magnetron sputtering method, under the protection of Ar atmosphere, control Ar throughputs are 20sccm, and control sputtering power is 40W
Deposition gold electrode is carried out, there are four the gold electrode that thickness is that 25nm central angles are 90 ° of sector structures, adjacent gold electrodes for deposition growing
Spacing be 0.5mm, obtaining sputtering has the diamond of electrode；
Four, stainless steel mask plate is separated from the diamond that sputtering has electrode, obtains the Buddha's warrior attendant for being coated with gold electrode
Stone；
Five, it is 2 × 2cm the diamond for being coated with gold electrode to be fixed on size with elargol2Plastic land on, four
Gold electrode is connect with conducting wire with four strip electrodes on pcb pads respectively, obtains the two-dimension plane structure with four electrodes
Diamond position sensitive detector.
The diamond position sensitive detector that the present embodiment obtains is tested for the property, is original with the center of circle of gold electrode
Point selects two electrodes of A and B in Fig. 1, is biased from -100V and changes to 100V, and it is respectively 20V to obtain bias size,
Under the conditions of 40V, 60V, 80V, 100V, the laser of the model DH2000 produced using OCEAN OPTICS companies is as compound
Light source irradiates gold electrode, spot diameter 1.96mm, changes light-beam position along X-direction, and test obtains forward bias and anti-
To the photoelectric current that bias size is different location under U.If I+UFor the photoelectricity that forward bias size under certain position is polychromatic light under U
Stream, if I-UIt is the photoelectric current under polychromatic light under U for reverse biased size under certain position, current difference is Δ I=I+U+I-U；Root
According to photoelectricity flow data, the variation relation curve graph of Δ I and X position is made, as shown in Figure 2.As seen from the figure, in certain distance range
(-1.0mm<x<In 1.0mm), linear relationship is presented with light-beam position in current signal difference, this shows that the detector has well
Position sensitive detecting function.
Claims (10)
1. a kind of preparation method of diamond position sensitive detector, it is characterised in that this method is to follow these steps to realize：
One, single-crystal CVD diamond is placed in the nitration mixture bath of boiling and handles 30~60min, then successively in deionized water, anhydrous
It is cleaned by ultrasonic 5~30min respectively in ethyl alcohol and acetone, the diamond after being cleaned；
Two, the surface of the diamond by tool there are four the stainless steel mask plate that central angle is 90 ° of sector structures fixation after cleaning,
Four central angles are that 90 ° of sector structures form circle, and the back side of the diamond after cleaning is pasted on the glass sheet, obtain carrying glass
The diamond of glass piece；
Three, Au targets are installed to magnetic controlled sputtering target, the diamond with sheet glass that step 2 obtains is placed in vacuum magnetic control
On warm table in sputter coating system, starting vacuum system will be evacuated in vacuum warehouse so that vacuum degree is 1.0 × 10-4
~8.0 × 10-4Pa, using magnetron sputtering method, under the protection of Ar atmosphere, control Ar throughputs are 10~30sccm, and control is splashed
It is that 30~50W carries out deposition gold electrode to penetrate power, and deposition growing is obtained there are four the gold electrode that central angle is 90 ° of sector structures
Sputtering has the diamond of electrode；
Four, stainless steel mask plate is separated from the diamond that sputtering has electrode, obtains the diamond for being coated with gold electrode；
Five, the diamond for being coated with gold electrode is fixed on pad, four gold electrodes use conducting wire and four items on pad respectively
Shape electrode connects, and obtains the diamond position sensitive detector of the two-dimension plane structure with four electrodes.
2. a kind of preparation method of diamond position sensitive detector according to claim 1, it is characterised in that step 1
The size of the single-crystal CVD diamond is 3.0 × 3.0mm2, thickness 0.5mm.
3. a kind of preparation method of diamond position sensitive detector according to claim 1, it is characterised in that step 1
In nitration mixture be volume ratio be 1:1:The perchloric acid and quality point that nitric acid that 1 mass fraction is 68%, mass fraction are 70%
Number is the mixed acid of 98% sulfuric acid.
4. a kind of preparation method of diamond position sensitive detector according to claim 1, it is characterised in that step 1
In 15~30min cleaned with the power ultrasonic of 300~600W.
5. a kind of preparation method of diamond position sensitive detector according to claim 1, it is characterised in that step 3
Middle startup vacuum system will be evacuated in vacuum warehouse, and it is 4.5 × 10 to make vacuum degree in vacuum warehouse-4Pa。
6. a kind of preparation method of diamond position sensitive detector according to claim 1, it is characterised in that step 3
Using magnetron sputtering method, under the protection of Ar atmosphere, control Ar throughputs are 20sccm, and control sputtering power is that 40W is sunk
1~2min of product.
7. a kind of preparation method of diamond position sensitive detector according to claim 1, it is characterised in that step 3
The thickness of middle gold electrode is 20~50nm.
8. a kind of preparation method of diamond position sensitive detector according to claim 1, it is characterised in that step 3
In adjacent gold electrode spacing be 0~1mm.
9. a kind of preparation method of diamond position sensitive detector according to claim 1, it is characterised in that step 5
The diamond for being coated with gold electrode is fixed on elargol on pad.
10. a kind of preparation method of diamond position sensitive detector according to claim 1, it is characterised in that step 5
Described in conducting wire be silver wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810582199.1A CN108682717B (en) | 2018-06-07 | 2018-06-07 | Method for preparing diamond position sensitive detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810582199.1A CN108682717B (en) | 2018-06-07 | 2018-06-07 | Method for preparing diamond position sensitive detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108682717A true CN108682717A (en) | 2018-10-19 |
| CN108682717B CN108682717B (en) | 2020-06-09 |
Family
ID=63810112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810582199.1A Active CN108682717B (en) | 2018-06-07 | 2018-06-07 | Method for preparing diamond position sensitive detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108682717B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109001791A (en) * | 2018-06-07 | 2018-12-14 | 哈尔滨工业大学 | The beam position localization method of diamond position sensitive detector |
| CN111334761A (en) * | 2020-04-02 | 2020-06-26 | 湖州中芯半导体科技有限公司 | Method for preparing CVD diamond wafer with surface covered with metal grid |
| CN113917518A (en) * | 2021-09-18 | 2022-01-11 | 中国原子能科学研究院 | Device for measuring spatial distribution of different radiation components of irradiation beam for boron neutron capture treatment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006521A (en) * | 2015-05-29 | 2015-10-28 | 金康康 | Ultraviolet photoelectric detector based on PFH/n-SiC organic-inorganic heterostructure |
-
2018
- 2018-06-07 CN CN201810582199.1A patent/CN108682717B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006521A (en) * | 2015-05-29 | 2015-10-28 | 金康康 | Ultraviolet photoelectric detector based on PFH/n-SiC organic-inorganic heterostructure |
Non-Patent Citations (2)
| Title |
|---|
| KEWIN DESJARDINS等: ""Ultra-thin optical grade scCVD diamond as X-ray beam position monitor"", 《JOURNAL OF SYNCHROTRON RADIATION》 * |
| 王兰: ""电流型CVD金刚石探测器研制"", 《中国博士学位论文全文数据库（电子期刊）工程科技Ⅱ辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109001791A (en) * | 2018-06-07 | 2018-12-14 | 哈尔滨工业大学 | The beam position localization method of diamond position sensitive detector |
| CN111334761A (en) * | 2020-04-02 | 2020-06-26 | 湖州中芯半导体科技有限公司 | Method for preparing CVD diamond wafer with surface covered with metal grid |
| CN113917518A (en) * | 2021-09-18 | 2022-01-11 | 中国原子能科学研究院 | Device for measuring spatial distribution of different radiation components of irradiation beam for boron neutron capture treatment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108682717B (en) | 2020-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108682717A (en) | A kind of preparation method of diamond position sensitive detector | |
| Hassan et al. | Effect irradiation time of Gamma ray on MSISM (Au/SnO2/SiO2/Si/Al) devices using theoretical modeling | |
| Abou-Ras et al. | Electron-beam-induced current measurements of thin-film solar cells | |
| CN102759327A (en) | Sensor for detecting two-dimensional light-spot position | |
| Bolotnikov et al. | Optimization of virtual Frisch-grid CdZnTe detector designs for imaging and spectroscopy of gamma rays | |
| Cui et al. | DC photoconductivity study of semi-insulating Cd 1− x Zn x Te crystals | |
| CN106847987B (en) | CIGS superelevation, ultrafast wide wavestrip optical position sensitive detector | |
| Luke et al. | Germanium orthogonal strip detectors with amorphous-semiconductor contacts | |
| CN109001791B (en) | Beam position positioning method of diamond position sensitive detector | |
| Blum et al. | Transparent silicon strip sensors for the optical alignment of particle detector systems | |
| CN208835074U (en) | A kind of three-dimensional parallel-plate electrode semiconductor detector and detection device | |
| CN114335238B (en) | Electrode structure of diamond particle detector and preparation method thereof | |
| US11579317B2 (en) | Hydrogenated amorphous silicon detector | |
| JPH0377672B2 (en) | ||
| CN114236600A (en) | Neutron beam monitoring system based on silicon carbide detector | |
| Tesarek et al. | Performance of a diamond-tungsten sampling calorimeter | |
| JPH0546709B2 (en) | ||
| Rancoita et al. | Silicon detectors in electromagnetic and hadronic calorimetry | |
| RU2611552C2 (en) | Photodetector (versions) and production method thereof | |
| JPS56129380A (en) | Semiconductor radioactive rays detector | |
| Shams et al. | Development of CdS/CdTe Diode for X-Ray Sensor | |
| Menichelli et al. | Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes. Instruments 2021, 5, 32 | |
| Caylar | Fabrication and characterization of a 3D diamond detector | |
| Vizkelethy et al. | Nuclear microprobe studies of the electronic transport properties of cadmium zinc telluride (CZT) radiation detectors | |
| JPS61196582A (en) | Amorphous silicon x-ray sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |