CN114236600A - A neutron beam monitoring system based on silicon carbide detector - Google Patents
A neutron beam monitoring system based on silicon carbide detector Download PDFInfo
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- CN114236600A CN114236600A CN202111412167.5A CN202111412167A CN114236600A CN 114236600 A CN114236600 A CN 114236600A CN 202111412167 A CN202111412167 A CN 202111412167A CN 114236600 A CN114236600 A CN 114236600A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 74
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 238000012544 monitoring process Methods 0.000 title claims abstract description 38
- 239000002245 particle Substances 0.000 claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000004458 analytical method Methods 0.000 claims abstract description 12
- 239000011888 foil Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 238000003763 carbonization Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 20
- 230000005855 radiation Effects 0.000 abstract description 14
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000004347 surface barrier Methods 0.000 abstract description 5
- 229910015365 Au—Si Inorganic materials 0.000 abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 10
- 239000010931 gold Substances 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 238000001657 homoepitaxy Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000008719 thickening Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000004992 fission Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Abstract
本发明属于中子束流监测系统，为解决目前采用伴随粒子方法测量D‑D/D‑T中子产额，D(d,n)3He或T(d,n)4He反应过程会伴随许多中子和α粒子的辐射，对探测器造成辐射损伤，在155°靶管中安装Au‑Si面垒探测器，于1×1012cm‑2辐照注量下硅探测器又会受到明显辐射损伤的问题，提供一种基于碳化硅探测器的中子束流监测系统，包括真空伴随靶管、碳化硅探测器和分析处理系统，真空伴随靶管一端内部用于设置靶标，另一端外部套设有绝缘环和限束光阑，且限束光阑靠近真空伴随靶管的端部，碳化硅探测器与真空伴随靶管套设绝缘环的一端端面相对设置，碳化硅探测器与真空伴随靶管之间设有铝箔，真空伴随靶管内沿其轴向设置有3‑6个反散射光阑。
The invention belongs to a neutron beam monitoring system, and in order to solve the problem that the D-D/D-T neutron yield is measured by the accompanying particle method at present, the reaction process of D(d,n) 3 He or T(d, n) 4 He will With the radiation of many neutrons and alpha particles, radiation damage is caused to the detector. The Au-Si surface barrier detector is installed in the 155° target tube, and the silicon detector will be irradiated again under the irradiation fluence of 1×10 12 cm -2 . Due to the problem of obvious radiation damage, a neutron beam monitoring system based on a silicon carbide detector is provided, including a vacuum accompanying target tube, a silicon carbide detector and an analysis and processing system. One end of the vacuum accompanying target tube is used to set the target, and the other An insulating ring and a beam-limiting diaphragm are sleeved outside one end, and the beam-limiting diaphragm is close to the end of the vacuum-accompanying target tube. Aluminum foil is arranged between the vacuum accompanying target tube, and 3-6 anti-scattering diaphragms are arranged in the vacuum accompanying target tube along its axial direction.
Description
Technical Field
The invention belongs to a neutron beam monitoring system, and particularly relates to a neutron beam monitoring system based on a silicon carbide detector.
Background
The D-D/D-T fusion reaction neutron generator is an important fast neutron source with high neutron yield and good neutron energy monochromaticity, and is widely applied to basic nuclear data measurement and related application research in the fields of fission nuclear energy utilization, fusion nuclear energy utilization and the like.
Accurate monitoring of the D-D/D-T neutron yield is an important guarantee for research work with D-D/D-T neutron generators. At present, the methods related to D-D/D-T neutron yield measurement are more, and a recoil proton telescope method, a fission ionization chamber method and BF are mainly adopted3Proportional counter tube method and accompanying particle method, in which the accompanying particle method is a method of measuring T (d, n)4Accompanying alpha particles generated by He reaction, or measuring D (D, n)3The associated protons in the He reaction give the neutron yield, and the method has the characteristics of high measurement precision and capability of realizing absolute measurement, so that the method is more widely applied compared with other methods.
D(d,n)3He or T (d, n)4He reaction process can accompany radiation from many neutrons and alpha particles, causing radiation damage to the detector, causing performance degradation. In the past, researchers have installed Au — Si surface barrier detectors in 155 ° target tubes. However, the radiation resistance of silicon detector is not ideal and is 1 × 1012cm-2The silicon detector is observed to have obvious radiation damage under the irradiation fluence, and the problems of reduced energy resolution, increased noise, deviation of alpha particle response spectrum peak position and the like can occur under the irradiation of neutrons and charged particles, so that the method is very unfavorable for obtaining reliable beam monitoring data.
Disclosure of Invention
The invention aims to solve the problem that the D-D/D-T neutron yield D (D, n) is measured by adopting an adjoint particle method at present3He or T (d, n)4The technical problem that the detector is damaged by radiation in the He reaction process along with the radiation of a plurality of neutrons and alpha particles, performance degradation is caused, and reliable beam monitoring data are obtained is very unfavorable is solved.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
a neutron beam monitoring system based on a silicon carbide detector is characterized by comprising a vacuum accompanying target tube, a silicon carbide detector and an analysis processing system;
the vacuum accompanying target tube is internally provided with a target, the other end of the vacuum accompanying target tube is externally sleeved with an insulating ring, and the outer side of the insulating ring is provided with a beam limiting diaphragm;
the silicon carbide detector and one end face of one end of the vacuum accompanying target pipe, which is sleeved with the insulating ring, are arranged oppositely, and an aluminum foil is arranged between the silicon carbide detector and the vacuum accompanying target pipe;
3-6 back scattering diaphragms are arranged in the vacuum accompanying target pipe along the axial direction of the vacuum accompanying target pipe;
the backscatter diaphragms, the beam limiting diaphragms, the aluminum foils and the silicon carbide detectors are all arranged coaxially with the targets;
and the analysis processing system is connected with the silicon carbide detector and is used for analyzing and processing signals generated by the accompanying particles entering the silicon carbide detector to obtain the number of the accompanying alpha particles.
Further, the diameter of each backscattering diaphragm is sequentially reduced along the moving direction of the neutron beam.
Further, the number of the back scattering diaphragms is 6, and the diameter ratio of each back scattering diaphragm along the moving direction of the neutron beam is 20-12: 18-10: 16-10: 15-6: 7-2: 1.
further, the distance between the silicon carbide detector and the target is larger than the diameter of the beam limiting diaphragm.
Furthermore, the distance between every two adjacent backscattering diaphragms is 400-600 mm, and the distance between the backscattering diaphragm at the tail end of the moving direction of the neutron beam and the inner end face of one end, provided with the target, of the vacuum accompanying target tube is 1200-1800 mm.
Further, the length of the vacuum accompanying target tube is 1200-2000 mm; the thickness of the aluminum foil is 0.8-2 μm.
Further, the silicon carbide detector is a Schottky diode type silicon carbide detector or a P-I-N type silicon carbide detector.
Compared with the prior art, the invention has the following beneficial effects:
1. the neutron beam monitoring system based on the silicon carbide detector adopts the silicon carbide detector, and the silicon carbide detector can meet the beam monitoring requirement and can obtain rich detailed information.
2. The silicon carbide detector has 2-3 orders of magnitude higher radiation resistance to alpha particles than a silicon detector, has better radiation resistance to neutrons in a use environment, and has longer service life than the conventional Au-Si surface barrier detector.
3. The diameter of the vacuum accompanying target tube provided with 3-6 back scattering diaphragms is gradually reduced along the moving direction of the neutron beam, which is beneficial to reducing the influence of scattering alpha particles on beam monitoring.
4. The monitoring system of the invention is used for monitoring steady-state and pulse fast neutron beam current of an accelerator device, in particular to D (D, n)3He or T (d, n)4The average energy of the neutron beam generated by the He nuclear reaction is 2.5MeV or 14MeV, because of D (D, n)3He and T (d, n)4The He reaction process is accompanied with the radiation of a plurality of neutrons and alpha particles, the radiation damage to the detector is particularly obvious, and the monitoring system has extremely small damage and particularly obvious effect.
Drawings
FIG. 1 is a schematic view of a neutron beam monitoring system based on a silicon carbide detector according to an embodiment of the present invention;
FIG. 2 is a schematic view of the vacuum-adjoined target tube of FIG. 1;
FIG. 3 is a neutron beam monitoring system pair T (d, n) based on a silicon carbide detector according to the present invention4A schematic diagram of the results of monitoring of the He nuclear reaction (typically with a silicon carbide detector);
fig. 4 is a schematic diagram showing comparison of measurement results of the AU-Si surface barrier detector and the silicon carbide detector used in the present invention.
Wherein: 1-vacuum adjoint target tube, 2-silicon carbide detector, 3-analysis processing system, 301-preamplifier, 302-main amplifier, 303-multi-channel analyzer, 304-bias power supply, 305-single channel analyzer, 306-scaler, 4-insulating ring, 5-beam limiting diaphragm, 6-backscatter diaphragm, 7-aluminum foil, 8-target.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
The invention provides a neutron beam monitoring system based on a silicon carbide detector, which is used for monitoring the neutron beam which is shot to a target 8 by a D particle beam through an accelerator, and the included angle between the D particle beam and the axis of the target 8 is 90 degrees, 135 degrees or 155 degrees. As shown in fig. 1 and 2, the angle θ between the D particle beam and the axis of the target 8 is 155 °, and the angle θ includes a vacuum accompanying target tube 1, a silicon carbide detector 2, and an analysis processing system 3. Wherein, the vacuum is followed target pipe 1 one end inside and is equipped with target 8, and the outside cover of the other end is equipped with insulator ring 4 and beam limiting diaphragm 5, and beam limiting diaphragm 5 is closer to the tip that the vacuum was followed target pipe 1 than insulator ring 4, and carborundum detector 2 sets up with the vacuum is followed target pipe 1 cover one end terminal surface of establishing insulator ring 4 relatively, and carborundum detector 2 sets up with the vacuum is followed through aluminium foil 7 interval between the target pipe 1. The vacuum accompanying target tube 1 is internally provided with 3 anti-scattering diaphragms 6 along the axial direction thereof, the diameters of the 3 anti-scattering diaphragms 6 are sequentially reduced along the moving direction of the neutron beam, and the 3 anti-scattering diaphragms 6, the beam limiting diaphragm 5, the aluminum foil 7 and the silicon carbide detector 2 are all coaxially arranged with the target 8.
The analysis processing system 3 connected to the silicon carbide detector 2 includes a preamplifier 301, a main amplifier 302, a multi-channel analyzer 303, a bias power supply 304, a single-channel analyzer 305, and a scaler 306, and the analysis processing process of the analysis processing system is the same as the analysis processing method of the existing monitoring system, and is used for analyzing and processing the signal generated by the accompanying particles entering the silicon carbide detector 2, and the accompanying particles enter the silicon carbide detector 2 to generate a signal, and are analyzed and processed by the analysis processing system to obtain the accompanying alpha particle number.
In other embodiments of the present invention, if the included angle between the D-particle beam and the axis of the target 8 is 90 ° or 135 °, the monitoring system of the present invention can be directly used, and only the parameter setting is adjusted accordingly.
In addition, the number of the backscattering diaphragms 6 in the vacuum-assisted target tube 1 can be generally set to 3-6, the above embodiment is set to 3, but it is a preferable mode, if the number is set to 6, the diameter of each backscattering diaphragm 6 is also reduced in sequence along the moving direction of the neutron beam, and the preferable diameter ratio is 20-12: 18-10: 16-10: 15-6: 7-2: 1.
in addition, in order to optimally design the monitoring system, the distance between adjacent backscattering diaphragms 6 can be set to be 400-600 mm, and the distance between the backscattering diaphragm 6 at the tail end of the neutron beam current movement direction and the inner end face of the vacuum accompanying target tube 1 is set to be 1200-1800 mm. The length of the vacuum accompanying target tube 1 is set to 1200-2000 mm, and the thickness of the aluminum foil 7 is set to 0.8-2 μm.
The distance l between the silicon carbide detector 2 and the target 8 and the diameter of the beam limiting diaphragm 5 are both one of the parameters of neutron yield, and r < < l needs to be met, and the parameter setting is only an optimal scheme when the included angle theta between the D particle beam and the axis of the target 8 is 155 degrees.
The working principle of the monitoring system of the invention is as follows:
the D particle beam accelerated by the accelerator bombards on the target 8 of T-Ti, and D reacts with T to generate 14MeV neutrons and 3.5MeV alpha (alpha)4He) particles in which neutrons are generated in one-to-one correspondence with alpha particles, the emission time is the same, and the emission direction is opposite, so that the emitted neutrons can be tracked by monitoring the accompanying alpha particles. The emitted alpha particles sequentially pass through the vacuum accompanying target tubes 1 and the anti-scattering diaphragms 6, are collimated by the beam limiting diaphragm 5 and then reach the silicon carbide detector 2, and in order to reduce the influence of the scattered D particles on the silicon carbide detector 2, an aluminum foil 7 is shielded in front of the silicon carbide detector 2.
The silicon carbide detector 2 used in the invention can adopt a Schottky diode type silicon carbide detector or a P-I-N type silicon carbide detector, and the following concrete preparation methods of the Schottky diode type silicon carbide detector and the P-I-N type silicon carbide detector are provided.
The preparation method of the Schottky diode type silicon carbide detector comprises the following steps:
(1) preparing homoepitaxy on the upper surface of the N-type silicon carbide substrate by using a chemical vapor deposition method;
(2) cleaning and polishing the lower surface of an N-type silicon carbide substrate, placing the N-type silicon carbide substrate on an electron beam evaporation platform, enabling the lower surface of the N-type silicon carbide substrate to face upwards, preparing a nickel/gold electrode on the lower surface of the N-type silicon carbide substrate, carrying out vacuum annealing at 900 ℃ to obtain ohmic contact, and thickening the nickel/gold electrode by using an electroplating method;
(3) cleaning and polishing the homoepitaxy surface on the upper surface of the N-type silicon carbide substrate, placing the surface on an electron beam evaporation platform, preparing a nickel electrode on the homoepitaxy surface, obtaining a preset electrode pattern by using a mask plate, evaporating a gold layer at a wiring disc exposed by the mask plate, and thickening the gold layer to obtain a chip;
(4) and protecting the wiring position of the chip by using a mask, and sequentially manufacturing silicon oxide and silicon nitride dielectric layers on the nickel electrode.
The preparation method of the P-I-N type silicon carbide detector comprises the following steps:
(1) preparing homoepitaxy on the upper surface of the N-type silicon carbide substrate by using a chemical vapor deposition method;
(2) growing an aluminum-containing P layer on the homoepitaxy on the N-type silicon carbide substrate by using a chemical vapor deposition method, wherein the aluminum-containing P layer has an aluminum doping concentration of 2 x 1019cm-3The thickness of the P layer is 0.3 mu m;
(3) cleaning and polishing the lower surface of the N-type silicon carbide substrate, placing the lower surface on an electron beam evaporation platform, preparing a nickel/gold electrode on the lower surface of the N-type silicon carbide substrate, carrying out vacuum annealing at 900 ℃ to obtain ohmic contact on the lower surface, and thickening the ohmic contact by using an electroplating method;
(4) cleaning and polishing the homoepitaxy surface, preparing a nickel electrode with the thickness of 50nm on the cleaned and polished homoepitaxy surface by using an electron beam evaporation platform, annealing in argon at 900 ℃ to obtain ohmic contact on the upper surface, obtaining a preset electrode pattern by using a mask plate during manufacturing, evaporating a gold layer at a wiring plate, and thickening the gold layer to obtain a chip;
(5) and protecting the front surface connecting disc of the chip by using a mask plate, and sequentially manufacturing silicon oxide and silicon nitride dielectric layers on the front surface of the chip.
The neutron beam monitoring system based on the silicon carbide detector can be applied to monitoring the steady state and the pulse fast neutron beam of an accelerator device, in particular to the pulse fast neutron beam D (D, n)3He or T (d, n)4The average energy of the neutron beam generated by the He nuclear reaction is 2.5MeV or 14MeV, as shown in figure 3, the monitoring system of the invention is adopted to measure T (d, n) for a certain pulse fast neutron beam4The typical particle-coupled method is used for monitoring the neutron beam current of the He nuclear reaction. The clear observation is made in the vicinity of the 250 channels4The He particle peak, which can be used to infer neutron yield, was fitted with a Gaussian function, and the energy resolution of the silicon carbide detector was 8% calculated by dividing the full width at half maximum (FWHM) by the peak centroid, while the proton peak of the D (D, n) p product near channel 141 was also detected because the deuterium content of the tritium target increased after a period of use. FIG. 4 is a comparison of the measurement results of the Au-Si surface barrier detector and the silicon carbide detector, which are well matched, and the linear determination coefficient of the fitting result is as high as 99%. Proved by verification, the silicon carbide detector 2 can well meet the requirement of test precision, and the error is within 1%. Therefore, the monitoring system of the invention not only can meet the requirement of test precision, but also can effectively improve the radiation resistance of alpha particles, and has longer service life.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
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| CN115407387A (en) * | 2022-08-19 | 2022-11-29 | 西北核技术研究所 | Silicon carbide self-sufficient semiconductor detector and neutron beam anti-angle monitoring device |
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