CN115407387A - Silicon carbide self-powered semiconductor detector and neutron beam reflex angle monitoring device - Google Patents
Silicon carbide self-powered semiconductor detector and neutron beam reflex angle monitoring device Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 97
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 238000012806 monitoring device Methods 0.000 title claims abstract description 26
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- 229910052782 aluminium Inorganic materials 0.000 claims description 12
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/006—Measuring neutron radiation using self-powered detectors (for neutrons as well as for Y- or X-rays), e.g. using Compton-effect (Compton diodes) or photo-emission or a (n,B) nuclear reaction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
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- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention relates to a neutron beam monitoring device, in particular to a silicon carbide self-powered semiconductor detector and a neutron beam dihedral monitoring device, and solves the technical problems that self-power supply cannot be realized and the energy resolution ratio is not ideal in the conventional silicon carbide semiconductor detector, so that an additional power supply is required for a front-end monitoring device. The silicon carbide self-powered semiconductor detector comprises SiO 2 The passivation layer, and a Ni/Au cathode, a SiC-N substrate, a SiC-N epitaxial layer, a SiC-N sensitive layer, a P region and a Ni/Au anode which are sequentially stacked from bottom to top; the invention also provides a neutron beam reflex angle monitoring device, which comprises a D particle beam pipeline, a target chamber, a tritium target, an alpha particle pipeline, a silicon carbide self-powered semiconductor detector and a measuring unit; one end of the D particle beam pipeline is used for receiving the D particle beam from the accelerator, and the other end of the D particle beam pipeline is communicated with the target chamber. The invention enables the silicon carbide self-powered semiconductor detector to realize self-power and high energy resolution through improvement.
Description
Technical Field
The invention relates to a neutron beam monitoring device, in particular to a silicon carbide self-powered semiconductor detector and a neutron beam dihedral monitoring device.
Background
Accelerator neutron source refers to the acceleration of charged particles (e.g., deuterium, protons, or the like)Other ions) bombard certain targets, which can trigger the equipment emitting neutron nuclear reaction. Compared with a radioactive isotope neutron source, the accelerator neutron source has the characteristics of high neutron yield, adjustable energy, capability of obtaining monochromatic neutrons in a wide energy area, capability of generating pulse neutrons, no strong radioactivity when the accelerator neutron source stops running and the like, so that the accelerator neutron source has wide application in the aspects of neutron activation analysis, neutron logging, neutron photography, neutron radiation breeding, nuclear medicine and the like. In the nuclear science and technology, the measurement of nuclear parameters, the measurement of neutron energy spectrum and the calibration of dosage instruments, the shielding test of reactor materials, other nuclear physics basic researches and the like can not be separated from various types of accelerator neutron sources. Accurate monitoring of the neutron fluence rate released during the nuclear reaction process is a fundamental and important guarantee for the development of these experiments and research work. One common method of measuring neutron fluence rate is the particle-concomitant method based on neutron nuclear reactions. In the D-T fusion neutron accelerator, D (T, n) 4 The He reaction produces neutrons accompanied by the production of alpha particles, and therefore, the neutron fluence rate can be determined by measuring the number of alpha particles. The method is simple and convenient to operate, high in measurement accuracy and reliable in result.
At present, a semiconductor detector commonly used in a particle method is a gold silicon surface barrier semiconductor detector, which has high energy resolution and accurate and reliable counting, but the service life of the semiconductor detector is short due to a complex irradiation environment in a test process, because charged particles can introduce various defects in the semiconductor detector through ionization and collision processes, and further deep level defects can be introduced in a forbidden band, so that the dark current of the semiconductor detector is increased, the signal-to-noise ratio is reduced, and the energy resolution is lowered, so that the semiconductor detector fails.
In recent years, researches show that the wide-bandgap semiconductor detector has stronger neutron irradiation resistance and alpha particle irradiation resistance than a silicon semiconductor detector and a germanium semiconductor detector, and an accelerator beam monitoring device developed by adopting the silicon carbide semiconductor detector solves the problem of short service life of the semiconductor detector.
Disclosure of Invention
The invention aims to provide a silicon carbide self-powered semiconductor detector and a neutron beam reflex angle monitoring device, aiming at the technical problems that the existing silicon carbide semiconductor detector cannot realize self-power supply and has unsatisfactory energy resolution ratio, so that a front-end monitoring device needs additional power supply, and the problems of self-power supply and high energy resolution ratio are further solved by improving the performance of the silicon carbide semiconductor detector.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
the silicon carbide self-powered semiconductor detector is characterized in that: comprising SiO 2 The passivation layer, and a Ni/Au cathode, a SiC-N substrate, a SiC-N epitaxial layer, a SiC-N sensitive layer, a P region and a Ni/Au anode which are sequentially stacked from bottom to top;
the SiC-N sensitive layer is of a step columnar structure; the P region is arranged on the SiC-N sensitive layer step column;
SiO 2 the passivation layers are respectively arranged on the outer surfaces of the P region and the SiC-N sensitive layer.
Further, the concentration of N in the SiC-N epitaxial layer is less than 5 multiplied by 10 13 cm -3 ；
The Al doping concentration of the P region is 2 x 10 19 cm -3 The thickness of the P region is 0.3 μm.
Further, the Ni/Au cathode is in ohmic contact with the SiC-N substrate;
the P region is in ohmic contact with the Ni/Au anode.
In addition, the invention also provides a neutron beam reflex angle monitoring device, which is characterized in that: the device comprises a D particle beam pipeline, a target chamber, a tritium target, an alpha particle pipeline, a silicon carbide self-powered semiconductor detector, a measuring unit and the silicon carbide self-powered semiconductor detector;
a silicon carbide self-powered semiconductor detector is arranged in one end of the alpha particle pipeline, a target chamber is arranged at the other end of the alpha particle pipeline, and the alpha particle pipeline is communicated with the target chamber; a tritium target is arranged at the end part, far away from the alpha particle pipeline, in the target chamber; the target chamber, the tritium target, the alpha particle pipeline and the silicon carbide self-powered semiconductor detector are coaxially arranged;
one end of the D particle beam pipeline is used for receiving a D particle beam from the accelerator, the other end of the D particle beam pipeline is communicated with the target chamber, and an included angle theta between the central axis of the D particle beam pipeline and the central axis of the tritium target is 90 degrees, or 135 degrees or 155 degrees;
the measuring unit is electrically connected with the silicon carbide self-powered semiconductor detector and is used for analyzing and processing signals generated by accompanying particles entering the silicon carbide self-powered semiconductor detector to obtain the accompanying alpha particle number.
Further, the device also comprises a plurality of beam limiting diaphragms;
the beam limiting diaphragm is arranged in the alpha particle pipeline and is positioned between the target chamber and the silicon carbide self-powered semiconductor detector;
the central axes of the plurality of beam limiting diaphragms coincide with the central axis of the silicon carbide self-powered semiconductor detector, and the plurality of beam limiting diaphragms are used for collimating alpha particles incident on the silicon carbide self-powered semiconductor detector.
Further, the device also comprises an aluminum foil arranged between the silicon carbide self-powered semiconductor detector and the beam limiting diaphragm, and the aluminum foil is used for eliminating the influence of D particles on the measurement result.
Furthermore, the number of the beam limiting diaphragms is 2-6;
the thickness of the aluminum foil is 2-7 μm.
Further, the included angle between the central axis of the D particle beam pipeline and the central axis of the tritium target is 135 degrees.
Further, the measuring unit comprises a preamplifier, a main amplifier, a single-channel analyzer, a multi-channel analyzer and a scaler;
the preamplifier is electrically connected with the silicon carbide self-powered semiconductor detector; the output end of the preamplifier is electrically connected with the input end of the main amplifier; the output end of the main amplifier is respectively and electrically connected with the input end of the single-channel analyzer and the input end of the multi-channel analyzer; the output end of the single-channel analyzer is electrically connected with the input end of the scaler.
Compared with the prior art, the technical scheme of the invention has the beneficial effects that:
1. the silicon carbide self-powered semiconductor detector does not need to supply power when the front end of the neutron beam current dihedral monitoring device works, and has a simple structure. The sensitive region adopts ultra-low unintentional doping N concentration (< 5 multiplied by 10) 13 cm -3 ) The built-in bias voltage of the PIN type self-powered semiconductor detector prepared from the silicon carbide material is 2.1V, the depletion region width of more than 20 mu m can be obtained by the built-in bias voltage under zero bias voltage, and the zero bias voltage can realize the detection of accompanying alpha particles.
2. The silicon carbide self-powered semiconductor detector is high in energy resolution, can realize efficient discrimination of response peaks in measurement results along with the alpha particle amplitude spectrum, and is beneficial to realizing high signal-to-noise ratio.
3. The dead layer of the silicon carbide self-powered semiconductor detector is thin, energy broadening to alpha particles to be detected is small, the alpha particles to be detected can successfully penetrate through the dead layer of the silicon carbide self-powered semiconductor detector and enter a SiC-N sensitive area of the silicon carbide self-powered semiconductor detector, and detection of the alpha particles to be detected is successfully achieved.
4. The dark current of the silicon carbide self-powered semiconductor detector adopted by the invention is 1-2 orders of magnitude lower than that of the traditional silicon carbide self-powered semiconductor detector, so that a high signal-to-noise ratio can be realized during neutron fluence rate monitoring.
5. The silicon carbide self-powered semiconductor detector has the performance of resisting fast neutrons and charged particle irradiation which is higher than that of the traditional silicon carbide semiconductor detector by more than 4 orders, has better high-temperature environmental stability, has stable performance under the work of a strong radiation field and a high-temperature environment, and can realize the long-term reliable work of a neutron beam reflex angle monitoring device.
6. The invention can realize effective monitoring of neutron fluence rate and neutron fluence at the same time. The electronic system can simultaneously obtain the neutron fluence rate and the real-time measurement result of the neutron fluence by storing and processing the data of the unit time interval.
7. The invention is suitable for the application of a strong radiation field. The front end of the silicon carbide self-powered semiconductor detector does not need to be powered, and when a longer low-loss cable is selected to connect the silicon carbide self-powered semiconductor detector and an electronics system, the separation design of the silicon carbide self-powered semiconductor detector and the electronics system can be realized, so that the latter can be effectively shielded, and the practical application of strong radiation is facilitated.
Drawings
Fig. 1 is a schematic structural diagram of a silicon carbide self-powered semiconductor detector and a neutron beam dihedral monitoring device of the invention.
FIG. 2 is a schematic diagram of the structure of a silicon carbide self-powered semiconductor detector of the present invention.
Fig. 3 is a schematic view of an Am-Cm source alpha particle amplitude spectrum of the self-powered silicon carbide semiconductor detector under zero bias in the self-powered silicon carbide semiconductor detector and the neutron beam dihedral monitoring device of the invention.
The reference numbers in the figures are:
the device comprises a 1-D particle beam pipeline, a 2-target chamber, a 3-tritium target, a 4-alpha particle pipeline, a 5-beam limiting diaphragm, a 6-silicon carbide self-powered semiconductor detector, a 7-preamplifier, an 8-main amplifier, a 9-single-channel analyzer, a 10-multi-channel analyzer and a 11-calibrator.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments obtained by those skilled in the art without creative efforts based on the technical solutions of the present invention belong to the protection scope of the present invention.
Since the D particle beam accelerated by the accelerator is bombarded on the target of T-Ti, D reacts with T to generate 14MeV neutrons and 3.5MeV alpha (4 He) particles, wherein the neutrons and the alpha particles are generated in one-to-one correspondence, the emission time is the same, and the emission directions are opposite, so that the emitted neutrons can be tracked by monitoring the accompanying alpha particles. The invention provides a silicon carbide self-powered semiconductor detector and a neutron beam reflex angle monitoring device, wherein the silicon carbide self-powered semiconductor detector comprises a Ni/Au cathode, a SiC-N substrate, a SiC-N epitaxial layer, a SiC-N sensitive layer, a P region, a Ni/Au anode and a SiO which are sequentially stacked from bottom to top 2 A passivation layer; siC-N sensitive layerIs a step columnar structure; the P region is arranged on the SiC-N sensitive layer step column; siO2 2 The passivation layers are respectively arranged on the outer surfaces of the P region and the SiC-N sensitive layer.
As shown in fig. 1, the invention also provides a neutron beam dihedral monitoring device, which comprises a D particle beam pipeline 1, a target chamber 2, a tritium target 3, an alpha particle pipeline 4, a silicon carbide self-powered semiconductor detector 6 and a measuring unit;
one end of the alpha particle pipeline 4 is provided with a silicon carbide self-powered semiconductor detector 6, the other end of the alpha particle pipeline is provided with a target chamber 2, and the alpha particle pipeline 4 is communicated with the target chamber 2; a tritium target 3 is arranged at the end part of the interior of the target chamber 2 far away from the alpha particle pipeline 4; the target chamber 2, the tritium target 3, the alpha particle pipeline 4 and the silicon carbide self-powered semiconductor detector 6 are coaxially arranged;
one end of the D particle beam pipeline 1 is used for receiving a D particle beam from an accelerator, the other end of the D particle beam pipeline is communicated with the target chamber 2, and an included angle theta between the D particle beam and the central axis of the tritium target 3 is 90 degrees, or 135 degrees or 155 degrees.
The measuring unit is electrically connected with the silicon carbide self-powered semiconductor detector 6 and is used for analyzing and processing signals generated by accompanying particles entering the silicon carbide self-powered semiconductor detector 6 to obtain the accompanying alpha particle number.
In this embodiment, the D particle beam line 1 is installed at 135 ° to the tritium target 3.
As shown in FIG. 2, the silicon carbide self-powered semiconductor detector 6 comprises a Ni/Au anode, a P region, a SiC-N sensitive layer, a SiC-N epitaxial layer, a SiC-N substrate and SiO which are sequentially stacked 2 A passivation layer and a Ni/Au cathode; the silicon carbide self-powered semiconductor detector 6 comprises a Ni/Au anode, a Ni/Au cathode, a P region, a SiC-N sensitive layer, a SiC-N epitaxial layer, a SiC-N substrate and SiO 2 A passivation layer; the P region, the SiC-N sensitive layer and the SiC-N epitaxial layer are sequentially arranged on the SiC-N substrate; one end of the P region, which is far away from the SiC-N sensitive layer, is provided with a Ni/Au anode; one end of the SiC-N substrate, which is far away from the SiC-N epitaxial layer, is provided with a Ni/Au cathode; the Ni/Au anode, the P region and the SiC-N sensitive layer form a step column structure, siO 2 The passivation layer covers and is arranged on the outer surface of the step column structure, so that the edge electric field is uniformly distributed.
The silicon carbide self-powered semiconductor detector 6 is a PIN type silicon carbide detector prepared from a silicon carbide material with ultralow doping concentration, has a sensitive region width larger than the range of alpha particles under zero bias, and can form an effective electric signal without external bias. The silicon carbide self-powered semiconductor detector enables the front end of the neutron beam current reverse angle monitoring device to work without power supply. The silicon carbide self-powered semiconductor detector 6 has high energy resolution, the energy resolution to alpha particles is less than 2% under zero bias, and alpha particle signals and interference signals can be effectively distinguished.
2 beam limiting diaphragms 5 are arranged in the alpha particle pipeline 4, and the beam limiting diaphragms 5 are positioned between the target chamber 2 and the silicon carbide self-powered semiconductor detector 6; the central axes of the 2 beam limiting diaphragms 5 are coincided with the central axes of the target chamber 2 and the silicon carbide self-powered semiconductor detector 6, and the beam limiting diaphragm 5 is arranged in front of the silicon carbide self-powered semiconductor detector 6 to further collimate alpha particles incident on the silicon carbide self-powered semiconductor detector 6, so that the influence of scattering the alpha particles is reduced.
A piece of aluminum foil is arranged in front of the silicon carbide self-powered semiconductor detector 6, is positioned between the silicon carbide self-powered semiconductor detector 6 and the beam limiting diaphragm 5, and has the thickness of 2-7 mu m; the aluminum foil was used to eliminate the effect of D particles on the measurement results.
In this embodiment, the α particle tube 4 and the silicon carbide self-powered semiconductor detector 6 are insulated from each other to avoid the influence of the deuterium (D) particle beam. The silicon carbide self-powered semiconductor detector 6 is operated with a fixed solid angle set. The solid angle is determined by the distance between the tritium target 3 and the silicon carbide self-powered semiconductor detector 6 and the size of the collimated aperture of the front alpha particle tube 4 of the silicon carbide self-powered semiconductor detector 6.
The measurement unit connected to the silicon carbide self-powered semiconductor detector 6 includes a preamplifier 7, a main amplifier 8, a single-channel analyzer 9, a multi-channel analyzer 10, and a scaler 11. The preamplifier 7 is electrically connected with the silicon carbide self-powered semiconductor detector 6; the output end of the preamplifier 7 is electrically connected with the input end of the main amplifier 8; the output end of the main amplifier 8 is respectively and electrically connected with the input end of the single-channel analyzer 9 and the input end of the multi-channel analyzer 10; the output of the single-channel analyzer 9 is connected to the input of the sealer 11. Wherein the single channel analyzer 9 can only measure the number of pulses within one amplitude interval; the multi-channel analyzer 10 can simultaneously measure the number of pulses in a plurality of amplitude intervals; in this embodiment, the channel analyzer 9 and the multichannel analyzer 10 are set to correspond to two operation modes, and those skilled in the art can select one of the two modes as needed. The measurement process of the measurement unit is the same as that of the measurement method of the existing analysis processing system, and the measurement unit is used for analyzing and processing signals generated by accompanying particles entering the silicon carbide self-powered semiconductor detector 6, and generating signals by accompanying alpha particles entering the silicon carbide self-powered semiconductor detector 6, and analyzing and processing the signals by the analysis processing system to obtain the number of the accompanying alpha particles.
In other embodiments of the present invention, if the included angle between the D particle beam and the axis of the tritium target 3 is 90 ° or 155 °, the silicon carbide self-powered semiconductor detector and the neutron beam dihedral monitoring device of the present invention may be directly used, and only the parameter setting is adjusted accordingly.
In addition, the number of the beam limiting diaphragms 5 in the α -particle conduit 4 can be generally set to 2-6, and the above embodiment is set to 2, which is just a preferable mode, and if the number is set to 6, the diameters of the beam limiting diaphragms 5 are also decreased in sequence along the moving direction of the neutron beam.
The silicon carbide self-powered semiconductor detector 6 used in the invention adopts a PIN type silicon carbide detector, and the specific preparation method of the PIN type silicon carbide detector is as follows.
The preparation method of the PIN type silicon carbide detector comprises the following steps:
(1) Preparing homoepitaxy on the upper surface of the SiC-N substrate by using a chemical vapor deposition method to obtain a SiC-N epitaxial layer;
(2) Growing an aluminum-containing P region on a SiC-N epitaxial layer (a SiC-N sensitive layer is homologous with the SiC-N epitaxial layer and is an effective part for alpha particle deposition and belongs to a part of the SiC-N epitaxial layer) on the SiC-N substrate by using a chemical vapor deposition method, wherein the aluminum doping concentration of the aluminum-containing P region is 2 multiplied by 10 19 cm -3 The thickness of the P layer is 0.3 mu m;
(3) Cleaning and polishing the lower surface of the SiC-N substrate, placing the SiC-N substrate on an electron beam evaporation platform, preparing a nickel/gold (Ni/Au) electrode (Ni/Au cathode) on the lower surface of the SiC-N substrate, carrying out vacuum annealing at 900 ℃ to obtain ohmic contact on the lower surface, and thickening the ohmic contact by using an electroplating method;
(4) Cleaning and polishing the homogeneous epitaxial surface, preparing a nickel (Ni) electrode with the thickness of 50nm on the surface of the cleaned and polished homogeneous SiC-N epitaxial layer by using an electron beam evaporation platform, annealing in argon at 900 ℃ to obtain ohmic contact on the upper surface, obtaining a preset electrode pattern by using a mask plate during manufacturing, evaporating a gold (Au) electrode at a wiring plate, and thickening the gold (Au) electrode (Ni/Au anode) to obtain a chip;
(5) And protecting the front surface joint of the chip by using a mask plate, and sequentially manufacturing a silicon oxide (SiO 2) passivation layer on the front surface of the chip.
The working principle of the above embodiment of the invention is as follows:
d particle beams accelerated by an accelerator enter a target chamber 2 through a D particle beam pipeline 1 and bombard on a T-Ti tritium target 3, D reacts with T to generate 14MeV neutrons and 3.5MeV alpha (4 He) particles, wherein the neutrons and the alpha particles are generated in a one-to-one correspondence mode, the emitting time is the same, and the emitting directions are opposite, so that the emitted neutrons can be tracked through monitoring the accompanying alpha particles. The outgoing alpha particles reach the self-powered semiconductor detector 6 of silicon carbide after being collimated by the beam limiting diaphragm 5, and an aluminum foil is shielded in front of the self-powered semiconductor detector 6 of silicon carbide in order to reduce the influence of the scattered D particles on the self-powered semiconductor detector 6 of silicon carbide. Because the detector adopts ultra-low unintentional doping concentration (< 5 multiplied by 10) 13 cm -3 ) The silicon carbide material is prepared, the built-in bias voltage is 2.1V, and the built-in voltage can obtain the width of a depletion region larger than 20 mu m under zero bias voltage, namely, the width is larger than the range of alpha particles, so that the whole energy of the alpha particles can be deposited. The alpha particles penetrate through a dead layer of the silicon carbide self-powered semiconductor detector 6 to reach the SiC-N sensitive region of the silicon carbide self-powered semiconductor detector, electron-hole pairs are excited, the electron-hole pairs drift towards two stages under the action of an internal electric field, the silicon carbide self-powered semiconductor detector 6 obtains an electric signal, and the flux information of neutrons can be deduced by utilizing the electric signal.
As shown in FIG. 3, the spectrum of the alpha particle amplitude of a 1cm X150 μm silicon carbide self-powered detector under zero bias is shown, the alpha radiation source is 243 Am- 244 Cm source. From FIG. 3, it is clear that the full energy peak at two different energies, one from 5.28MeV, is observed 243 Am full energy peak, resolution 1.65%; another is at 5.8MeV 244 Full energy peak of Cm with resolution of 2.15%. The silicon carbide self-powered semiconductor detector 6 can realize high-precision test operation under zero bias, namely, the silicon carbide self-powered semiconductor detector is proved to be a self-powered detector.
Claims (9)
1. The self-powered silicon carbide semiconductor detector is characterized in that: comprising SiO 2 The passivation layer, and a Ni/Au cathode, a SiC-N substrate, a SiC-N epitaxial layer, a SiC-N sensitive layer, a P region and a Ni/Au anode which are sequentially stacked from bottom to top;
the SiC-N sensitive layer is of a step columnar structure; the P region is arranged on the step column of the SiC-N sensitive layer;
the SiO 2 The passivation layers are respectively arranged on the outer surfaces of the P region and the SiC-N sensitive layer.
2. The silicon carbide self-powered semiconductor detector as recited in claim 1, wherein: the concentration of N in the SiC-N epitaxial layer is less than 5 multiplied by 10 13 cm -3 ；
The aluminum doping concentration of the P region is 2 multiplied by 10 19 cm -3 The thickness of the P region is 0.3 μm.
3. The self-powered semiconductor detector of claim 2, wherein: the Ni/Au cathode is in ohmic contact with the SiC-N substrate;
the P region is in ohmic contact with the Ni/Au anode.
4. The utility model provides a neutron beam current dihedral monitoring device which characterized in that: comprises a D particle beam pipeline (1), a target chamber (2), a tritium target (3), an alpha particle pipeline (4) measuring unit and a silicon carbide self-powered semiconductor detector (6) as claimed in claims 1-3;
a silicon carbide self-powered semiconductor detector (6) is arranged in one end of the alpha particle pipeline (4), a target chamber (2) is arranged at the other end of the alpha particle pipeline, and the alpha particle pipeline (4) is communicated with the target chamber (2); a tritium target (3) is arranged at the end part, far away from the alpha particle pipeline (4), in the target chamber (2); the target chamber (2), the tritium target (3), the alpha particle pipeline (4) and the silicon carbide self-powered semiconductor detector (6) are coaxially arranged;
one end of the D particle beam pipeline (1) is used for receiving a D particle beam from an accelerator, the other end of the D particle beam pipeline is communicated with the target chamber (2), and an included angle theta between the central axis of the D particle beam pipeline (1) and the central axis of the tritium target (3) is 90 degrees, or 135 degrees or 155 degrees;
the measuring unit is electrically connected with the silicon carbide self-powered semiconductor detector (6), and is used for analyzing and processing signals generated by accompanying particles entering the silicon carbide self-powered semiconductor detector (6) to obtain the accompanying alpha particle number.
5. The neutron beam dihedral monitoring device of claim 4, wherein: further comprising a plurality of beam limiting diaphragms (5);
the beam limiting diaphragm (5) is arranged inside the alpha particle pipeline (4) and is positioned between the target chamber (2) and the silicon carbide self-powered semiconductor detector (6);
the central axes of the plurality of beam limiting diaphragms (5) are coincident with the central axis of the silicon carbide self-powered semiconductor detector (6), and the plurality of beam limiting diaphragms (5) are used for collimating alpha particles incident on the silicon carbide self-powered semiconductor detector (6).
6. The neutron beam dihedral monitoring device of claim 5, wherein: the device also comprises an aluminum foil arranged between the silicon carbide self-powered semiconductor detector (6) and the beam limiting diaphragm (5).
7. The neutron beam dihedral monitoring device according to any one of claims 4-6, wherein: the number of the beam limiting diaphragms (5) is 2-6;
the thickness of the aluminum foil is 2-7 μm.
8. The neutron beam dihedral monitoring device of claim 7, wherein: the included angle between the central axis of the D particle beam pipeline (1) and the central axis of the tritium target (3) is 135 degrees.
9. The neutron beam dihedral monitoring device of claim 8, wherein: the measuring unit comprises a preamplifier (7), a main amplifier (8), a single-channel analyzer (9), a multi-channel analyzer (10) and a scaler (11);
the preamplifier (7) is electrically connected with the silicon carbide self-powered semiconductor detector (6); the output end of the preamplifier (7) is electrically connected with the input end of the main amplifier (8); the output end of the main amplifier (8) is respectively and electrically connected with the input end of the single-channel analyzer (9) and the input end of the multi-channel analyzer (10); the output end of the single-channel analyzer (9) is electrically connected with the input end of the scaler (11).
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