CN108682687A - Half longitudinal type Ohm contact electrode and preparation method thereof - Google Patents
Half longitudinal type Ohm contact electrode and preparation method thereof Download PDFInfo
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- CN108682687A CN108682687A CN201810320840.4A CN201810320840A CN108682687A CN 108682687 A CN108682687 A CN 108682687A CN 201810320840 A CN201810320840 A CN 201810320840A CN 108682687 A CN108682687 A CN 108682687A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 36
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005275 alloying Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 235000019441 ethanol Nutrition 0.000 claims description 2
- 238000005224 laser annealing Methods 0.000 claims description 2
- -1 time Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
- H01L29/454—Ohmic electrodes on AIII-BV compounds on thin film AIII-BV compounds
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Half longitudinal type Ohm contact electrode of one kind and preparation method thereof, belongs to semiconductor devices production field.Technical essential is：Including semiconductor and metal electrode, the metal electrode is produced on the semiconductor, and the metal electrode is in stepped ramp type in the longitudinal direction.Advantageous effect is:Half longitudinal type Ohm contact electrode of the present invention and preparation method thereof increases effective contact area between metal and semiconductor, compared with conventional planar ohmic contact structure, in identity unit design volume, electric conduction flow is allowed to increase, electrode resistance value reduces；Simultaneously, longitudinal electrode part will have modulating action to electric field strength in semiconductor body, electric field strength centrostigma is divided into two or more parts, and fringe field concentration effect weakens, and is conducive to device and is worked under high current, voltage conditions without electric current breakdown occurs to early.
Description
Technical field
The invention belongs to semiconductor devices production field more particularly to a kind of can be used for the half of a variety of materials and structure type
Ohm contact electrode in conductor device technique and production method.
Background technology
With flourishing for semiconductor industry in recent years, scientific research personnel is gradually improved to the research of semi-conducting material, and half
The application range of conductor device is also more and more extensive.In the fields such as solid-state lighting, power electronic, sensor measuring, semiconductor device
Part is in highly important status by its outstanding material property and volume advantage.In at this stage, how to make semiconductor devices
Performance parameter be more nearly one of the main problem that material limits are device developer concerns.And along with third generation semiconductor
The continuous propulsion of investigation of materials, the transmission of high power density electric current are even more the primary study target become at present.In high-precision densification mark
Under accurate challenge, power density issue, which highlights, to be particularly acute, and how to reduce metal-semiconductor electrode in limited chip space
Resistance increases electric electrode current, reduces device since the heating problem that power attenuation is brought becomes the weight of new era device progress
Indicate.
Ohmic contact directly determines electronic device as component part important in metal-semiconductor electrode, characteristic
Electrology characteristic.Traditional Ohm contact electrode manufacturing technology mainly uses simple plane figure (as shown in Figure 1), by space
The restriction of factor, conductive capability is related with plane space size, and the contact resistance that the technology makes is also by technological factor
Be affected.What is more important, under the operating condition of high-power, Ohm contact electrode edge goes out when current lead-through
Existing peak electric field, the working time is long or electric current cross conference cause to occur to early at this electric current breakdown caused by current collection or
Thermal breakdown, therefore the operating condition of semiconductor devices seriously is constrained, while shortening the service life of device.In addition, plane
Structure electrode easily forms the electrode surface of out-of-flatness during alloying, and metal is insufficient with semiconductor adhesiveness, when long
Between application environment in, electrode delamination phenomenon is more universal, this causes irreversible influence to device itself, therefore further drop
The working life and reliability of low device.
Invention content
In order to solve above-mentioned problems of the prior art, the present invention propose a kind of half longitudinal type Ohm contact electrode and
Its production method increases conducting electric current, homogenization electric field strength and increase gold by changing electrode space structure to reach
The purpose of adhesion strength effect between category-semiconductor.
Technical solution is as follows：
A kind of half longitudinal type Ohm contact electrode, including semiconductor and metal electrode, the metal electrode are produced on described
On semiconductor, the metal electrode is in stepped ramp type on longitudinal profile.
Further, the stepped ramp type is single layer stepped ramp type or multilayer steps type.
Further, the metal electrode is in bar shaped or annular or sector on horizontal section.
Further, the height of step is 10-500nm.
The invention also includes a kind of half longitudinal type Ohm contact electrode production methods, and steps are as follows：
S1, using acetone, absolute ethyl alcohol, deionized water semiconductor samples are cleaned by ultrasonic successively, by semiconductor sample
Product surface clean is clean, dries up surface using nitrogen gun, is dried for standby；
S2, using photolithography method figure needed for etching is defined on step S1 treated samples；
S3, go out step shape in semiconductor samples surface etch using semiconductor wet etching or dry etching method, carve
It is cleaned by ultrasonic successively with acetone, alcohol, deionized water after erosion；
S4, using photolithography method figure needed for electrode deposition is defined on step S3 treated samples；
S5, Ohm contact electrode metal is prepared using metal deposit, stripping forms electrode pattern.
Further, the method for photoetching described in step S2 and step S4 include gluing, spin coating, it is soft dry, exposure, development and
The step of post bake.
Further, the method etched described in step S3 is sense coupling method, or using anti-
Answer the dry etching method of ion etching or the wet etching method using acid solution/etching alkaline solution.
Further, the step height lost and formed in surface light engraving in step S3 is 10-500nm.
Further, the method for metal deposit described in step S5 be thermal evaporation method or electron beam evaporation method or
Person's magnetically controlled sputter method or spin-coating method.
Further, further include following step：
S6, the temperature needed for metal-semiconductor ohmic contact alloy, time, atmosphere, are moved back by laser or heat
The mode of fire makes metal electrode alloying obtain Ohmic contact.
The beneficial effects of the invention are as follows：
Half longitudinal type Ohm contact electrode of the present invention and preparation method thereof increases between metal and semiconductor
Effective contact area in identity unit design volume, allows electric conduction flow to increase compared with conventional planar ohmic contact structure
Greatly, electrode resistance value reduces；Meanwhile longitudinal electrode part will have modulating action, electric field strength collection to electric field strength in semiconductor body
Midpoint is divided into two or more parts, and fringe field concentration effect weakens, and is conducive to device under high current, voltage conditions
Work is without occurring to early electric current breakdown.In addition, electrode structure proposed by the invention depends on horizontal, vertical two sides of semiconductor
To during electrode metal, the adhesion strength increase for metal and semiconductor brings possibility；Make the electrology characteristic of electrode
And reliability further increases.
Description of the drawings
Fig. 1 is traditional ohmic contact electrode structure schematic diagram；
Fig. 2 is half longitudinal type ohmic contact electrode structure schematic diagram of single layer step proposed by the invention；
Fig. 3 is half longitudinal type ohmic contact electrode structure schematic diagram of bilayer step proposed by the invention；
Fig. 4 is the Ohm contact electrode electrology characteristic comparison diagram that acquisition is tested in the embodiment of the present invention.
Specific implementation mode
1-4 pairs of half longitudinal type Ohm contact electrode and preparation method thereof is described further below in conjunction with the accompanying drawings.
Embodiment 1
A kind of half longitudinal type Ohm contact electrode, including semiconductor and metal electrode, the metal electrode are produced on described
On semiconductor, the metal electrode is in bilayer step type on longitudinal profile, and the metal electrode is in bar shaped on horizontal section,
The height of step is 10nm.
Embodiment 2
A kind of half longitudinal type Ohm contact electrode, including semiconductor and metal electrode, the metal electrode are produced on described
On semiconductor, the metal electrode on longitudinal profile be in single layer stepped ramp type, the metal electrode on horizontal section in a ring,
The height of step is 500nm.
Embodiment 3
A kind of half longitudinal type Ohm contact electrode production method can apply classes of semiconductors Ohmic contact, not differentiate between and partly lead
Body material type and metal material type.
Steps are as follows：
(1) acetone, absolute ethyl alcohol, deionized water is utilized to be cleaned by ultrasonic successively, semiconductor samples surface clean is clean, and
Surface is dried up using nitrogen gun, is dried for standby；
(2) on clean sample figure needed for etching is defined using photoetching technique；
(3) it loses step shape in surface light engraving using semiconductor wet or dry etching technology, acetone, wine is used after etching
Essence, deionized water are cleaned by ultrasonic successively, to remove the photoresist of remained on surface；
(4) on clean sample figure needed for electrode deposition is made by lithography using photoetching technique；
(5) Ohm contact electrode gold is prepared using deposition techniques such as electron beam evaporation, magnetron sputtering, thermal evaporation, spin-coating methods
Belong to, electrode pattern is formed using conventional strip techniques；
(6) metal electrode alloying is made to obtain Ohmic contact by way of laser or thermal annealing.
Include a whole set of gluing, spin coating, soft baking, exposure in the photoetching technique mentioned in step (2) and step (4)
The technologies such as light, development and post bake.
The semiconductor etching techniques referred in step (3) include wet etching and dry etching.More common dry method
It is etched with sense coupling (ICP), reactive ion etching (RIE) etc.；Wet etching has acid or aqueous slkali rotten
Erosion etc..Etching surface step is generally 10-500nm, is determined according to different semiconductors and metal types and concrete technology optimization.
Thermal evaporation, electron beam evaporation, magnetron sputtering, spin-coating method etc. can be used in the metal deposit mentioned in step (5)
Technical solution.
In step (6) in annealing way thermal annealing select with metal-semiconductor ohmic contact alloy needed for temperature, when
Between, the conditional parameters such as atmosphere, laser annealing selects the conditional parameters such as corresponding power, burst length, certain specific gold
Category-semiconductor Ohmic contact need not anneal, and can omit the step.
Embodiment 4
The Ohm contact electrode of this case making is half longitudinal type Ohm contact electrode of single layer, i.e., electrode shown in Fig. 2, tool
Steps are as follows for body：
Step (1) material prepares
In this example select Si substrates on GaN material as semi-conducting material, successively using acetone, absolute ethyl alcohol, go
Ionized water is cleaned by ultrasonic, and is dried up sample surfaces using nitrogen gun；
Figure required for step (2) chemical wet etching
In clean GaN sample surfaces, spin coating AZ5214E photoresists persistently rotate 30s using the rotating speed of 4000r/min,
And the good sample of spin coating is placed on 100 DEG C of hot plates, continuous heating 90s.It is 5mW/cm that the intensity of light source is utilized in this example2's
KarlSuss MA6 photolithographic exposure machines expose 30s, and the 45s that develops in developer solution.Sample is finally dried up, on 100 DEG C of hot plates
Post bake 60s；
Step (3) performs etching sample to form step
Using sense coupling (ICP) technology, sample surfaces are performed etching.Select etching gas and right
It is Cl to answer flow2- 10sccm, BCl3- 25sccm, etch period 2min.It is ultrasonic successively by acetone, absolute ethyl alcohol, ionized water
Cleaning is removed photoresist, then is tested through step instrument, and it is 300nm to measure etching depth；
Step (4) makes metal electrode figure by lithography
The photolithography method described in step (2) is repeated, makes the figure needed for design electrode by lithography, metal electrode in this example
Size is 50 μm of 5 μ m；
Step (5) deposit metal electrodes
Using tetra- layers of metals of electron beam evaporation technique (EB) depositing Ti/Al/Ni/Au, it is 20/ that every layer of metal, which corresponds to thickness,
120/45/55nm, and the sample of deposited metal is removed；
Step (6) metal electrode alloying
Using high-temperature quick thermal annealing technology, anneal 30s under conditions of temperature is 850 DEG C, gaseous environment is nitrogen, makes
Four layers of metal part fuse to form alloy, and then form Ohmic contact；
Step (7) electrical performance testing
For obtained device carry out electrical performance testing, and under identical conditions utilize common Ohmic contact technology system
At same size electrodes be compared, as shown in figure 4, Ohm contact electrode electric current made from the technology proposed using this patent
Up to 144mA/mm, 67mA/mm is reached using the Ohm contact electrode electric current obtained by traditional Ohmic contact technology, it can thus be appreciated that this is specially
The size of current that sharp technical solution obtains increases by about one time, significant effect.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Any one skilled in the art in the technical scope of present disclosure, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of half longitudinal type Ohm contact electrode, which is characterized in that including semiconductor and metal electrode, the metal electrode system
Make on the semiconductor, the metal electrode is in stepped ramp type on longitudinal profile.
2. half longitudinal type Ohm contact electrode as described in claim 1, which is characterized in that the stepped ramp type is single layer stepped ramp type
Or multilayer steps type.
3. half longitudinal type Ohm contact electrode as claimed in claim 1 or 2, which is characterized in that the metal electrode is in transverse direction
In bar shaped or annular or sector on section.
4. half longitudinal type Ohm contact electrode as claimed in claim 2, which is characterized in that the height of step is 10-500nm.
5. a kind of half longitudinal type Ohm contact electrode production method, which is characterized in that steps are as follows：
S1, using acetone, absolute ethyl alcohol, deionized water semiconductor samples are cleaned by ultrasonic successively, by semiconductor samples table
Face cleans up, and dries up surface using nitrogen gun, is dried for standby；
S2, using photolithography method figure needed for etching is defined on step S1 treated samples；
S3, go out step shape in semiconductor samples surface etch using semiconductor wet etching or dry etching method, after etching
It is cleaned by ultrasonic successively with acetone, alcohol, deionized water；
S4, using photolithography method figure needed for electrode deposition is defined on step S3 treated samples；
S5, Ohm contact electrode metal is prepared using metal deposit, stripping forms electrode pattern.
6. half longitudinal type Ohm contact electrode production method as claimed in claim 5, which is characterized in that step S2 and step S4
Described in photoetching method include gluing, spin coating, it is soft dry, exposure, development and the step of post bake.
7. half longitudinal type Ohm contact electrode production method as claimed in claim 5, which is characterized in that carved described in step S3
The method of erosion is sense coupling method, or using reactive ion etching dry etching method or make
With the wet etching method of acid solution/etching alkaline solution.
8. half longitudinal type Ohm contact electrode production method as claimed in claim 5, which is characterized in that on surface in step S3
The step height that light engraving loses and formed is 10-500nm.
9. half longitudinal type Ohm contact electrode production method as claimed in claim 5, which is characterized in that golden described in step S5
The method for belonging to deposition is thermal evaporation method or electron beam evaporation method or magnetically controlled sputter method or spin-coating method.
10. half longitudinal type Ohm contact electrode production method as claimed in claim 5, which is characterized in that further include following steps
Suddenly：
S6, the temperature needed for metal-semiconductor ohmic contact alloy, time, atmosphere, are made by way of thermal annealing
Metal electrode alloying obtains Ohmic contact；Or corresponding power, pulse are selected according to metal-semiconductor ohmic contact alloy
Time makes metal electrode alloying obtain Ohmic contact by way of laser annealing.
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| CN201810320840.4A CN108682687A (en) | 2018-04-11 | 2018-04-11 | Half longitudinal type Ohm contact electrode and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810320840.4A CN108682687A (en) | 2018-04-11 | 2018-04-11 | Half longitudinal type Ohm contact electrode and preparation method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103098189A (en) * | 2010-10-29 | 2013-05-08 | 松下电器产业株式会社 | Semiconductor device |
| KR20140100692A (en) * | 2013-02-07 | 2014-08-18 | 서울대학교산학협력단 | Method for manufacturing AlGaN/GaN HEMT |
| CN105448981A (en) * | 2014-06-20 | 2016-03-30 | 北大方正集团有限公司 | VDMOS device, drain electrode structure thereof, and manufacturing method |
| CN106531621A (en) * | 2016-11-16 | 2017-03-22 | 中山德华芯片技术有限公司 | Method for manufacturing step-like source electrode and drain electrode ohmic contact gallium nitride field-effect tube |
-
2018
- 2018-04-11 CN CN201810320840.4A patent/CN108682687A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103098189A (en) * | 2010-10-29 | 2013-05-08 | 松下电器产业株式会社 | Semiconductor device |
| KR20140100692A (en) * | 2013-02-07 | 2014-08-18 | 서울대학교산학협력단 | Method for manufacturing AlGaN/GaN HEMT |
| CN105448981A (en) * | 2014-06-20 | 2016-03-30 | 北大方正集团有限公司 | VDMOS device, drain electrode structure thereof, and manufacturing method |
| CN106531621A (en) * | 2016-11-16 | 2017-03-22 | 中山德华芯片技术有限公司 | Method for manufacturing step-like source electrode and drain electrode ohmic contact gallium nitride field-effect tube |
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Application publication date: 20181019 |