CN108666209B - Manufacturing method of semiconductor substrate - Google Patents
Manufacturing method of semiconductor substrate Download PDFInfo
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- CN108666209B CN108666209B CN201710208601.5A CN201710208601A CN108666209B CN 108666209 B CN108666209 B CN 108666209B CN 201710208601 A CN201710208601 A CN 201710208601A CN 108666209 B CN108666209 B CN 108666209B
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- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000005224 laser annealing Methods 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000007547 defect Effects 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910007245 Si2Cl6 Inorganic materials 0.000 claims description 3
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 3
- 229910003818 SiH2Cl2 Inorganic materials 0.000 claims description 3
- 229910003822 SiHCl3 Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 12
- 238000005247 gettering Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention provides a method for manufacturing a semiconductor substrate, which comprises the steps of providing a substrate; forming an epitaxial layer on the substrate; performing first laser annealing on the substrate and the epitaxial layer by using laser with a first wavelength; performing second laser annealing on the epitaxial layer by using laser with a second wavelength; wherein the first wavelength is greater than the second wavelength. The interface of the substrate and the epitaxial layer and the impurity defects in the epitaxial layer can be effectively removed by two times of laser annealing, so that the quality of the semiconductor substrate is effectively improved; moreover, laser annealing can be completed in a short time, the preparation time of the semiconductor substrate is shortened, and the manufacturing efficiency of the semiconductor substrate is effectively improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a semiconductor substrate.
Background
Wafers, especially silicon wafers, are used as substrates for the fabrication of semiconductor integrated circuits thereon. Silicon wafer fabrication processes typically introduce defects including Crystal originated particle defects (COP) and impurities including oxygen, carbon, and metals, which seriously affect the performance of semiconductor integrated circuits.
In order to improve the performance of semiconductor integrated circuits, silicon epitaxial wafers are commonly used at present, which comprise an Intrinsic silicon Wafer (IG Wafer) and a silicon epitaxial layer deposited thereon; because the intrinsic gettering silicon wafer is subjected to gettering treatment such as annealing and the like, defects and impurities can be effectively reduced, so that the intrinsic gettering silicon wafer has high quality; moreover, the silicon epitaxial layer itself formed by chemical vapor deposition or the like is high in quality, so that the above silicon epitaxial wafer effectively reduces defects and impurities, and further, a semiconductor manufacturing process is performed thereon, enabling a high-performance semiconductor integrated circuit to be obtained.
However, the inventors have found through studies that, in the production of the above-mentioned silicon epitaxial wafer, the intrinsic gettering silicon wafer usually requires annealing treatment for a long time, sometimes even for several hours, which results in low production efficiency of the silicon epitaxial wafer. Therefore, how to shorten the preparation time of high-quality epitaxial wafers is a technical problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method for manufacturing a semiconductor substrate, which is used to solve the problems of long manufacturing time and low efficiency of the semiconductor substrate in the prior art.
To achieve the above and other related objects, the present invention provides a method for manufacturing a semiconductor substrate, comprising the steps of:
providing a substrate;
forming an epitaxial layer on the substrate;
performing first laser annealing on the substrate and the epitaxial layer by using laser with a first wavelength;
performing second laser annealing on the epitaxial layer by using laser with a second wavelength;
the first wavelength is greater than the second wavelength.
Optionally, the first laser annealing is performed at the interface between the substrate and the epitaxial layer.
Optionally, the second laser anneal is applied in a position within the epitaxial layer.
Optionally, the distance between the active position of the second laser annealing and the top surface of the epitaxial layer is between 3 μm and 10 μm.
Optionally, the first wavelength is between 600nm and 1060 nm.
Optionally, the second wavelength is between 100nm and 500 nm.
Optionally, the thickness of the epitaxial layer is between 8 μm and 20 μm.
Optionally, before performing the second laser annealing on the substrate and the epitaxial layer by using the laser with the second wavelength, the method further includes:
forming a barrier layer on the epitaxial layer, wherein the barrier layer is used for defining a chip area for preparing an integrated circuit;
and performing second laser annealing on the epitaxial layer by using laser with a second wavelength, wherein the second laser annealing comprises the following steps:
the second laser annealed active region covers the chip region.
Optionally, the first laser annealing and the second laser annealing are both performed in a nitrogen atmosphere.
Optionally, the laser used for the first laser annealing and/or the second laser annealing is a wide emission area laser.
Optionally, the substrate is a silicon substrate, and the epitaxial layer is a silicon epitaxial layer.
Optionally, the silicon epitaxial layer is generated with one or a combination of more of SiH4, SiH2Cl2, SiHCl3, SiCl4, and Si2Cl6 as a reaction gas.
As described above, the method for manufacturing a semiconductor substrate of the present invention has the following advantageous effects: by providing a substrate; forming an epitaxial layer on the substrate; performing first laser annealing on the substrate and the epitaxial layer by using laser with a first wavelength; performing second laser annealing on the epitaxial layer by using laser with a second wavelength; wherein the first wavelength is greater than the second wavelength. The interface of the substrate and the epitaxial layer and the impurity defects in the epitaxial layer can be effectively removed by two times of laser annealing, so that the quality of the semiconductor substrate is effectively improved; in addition, laser annealing can be completed in a short time, and the manufacturing efficiency of the semiconductor substrate can be effectively improved.
Drawings
Fig. 1 is a schematic flow chart illustrating a method for manufacturing a semiconductor substrate according to an embodiment of the present invention.
Fig. 2 to fig. 4 are schematic structural diagrams illustrating steps of a method for manufacturing a semiconductor substrate according to an embodiment of the invention.
Description of the element reference numerals
100 substrate
200 epitaxial layer
300 impurity defect
S1-S4
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 4. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Referring to fig. 1, a flow chart of a method for manufacturing a semiconductor substrate according to an embodiment of the present invention is shown in fig. 1, where the method includes the following steps:
step S1: providing a substrate 100;
step S2: forming an epitaxial layer 200 on the substrate 100;
step S3: performing first laser annealing on the substrate 100 and the epitaxial layer 200 with laser of a first wavelength;
step S4: performing second laser annealing on the epitaxial layer 200 by using laser with a second wavelength; wherein the first wavelength is greater than the second wavelength.
The method for manufacturing a semiconductor substrate according to the present invention will be described in detail with reference to specific examples.
In step S1, the substrate 100 may be a silicon substrate, or may be a substrate made of other materials, such as a GaN substrate. In the embodiment of the present invention, a method for manufacturing the semiconductor substrate will be described in detail, taking the substrate 100 as a silicon substrate as an example.
In step S2, as shown in fig. 2, an epitaxial layer 200 is formed on the substrate 100. The epitaxial layer 200 may be a silicon epitaxial layer, which may be formed on the top surface of the substrate 100 by deposition; in an exemplary embodiment, the silicon epitaxial layer may be SiH4、SiH2Cl2、SiHCl3、SiCl4And Si2Cl6As a reaction gas. Moreover, in the embodiment of the present invention, the thickness of the epitaxial layer 200 is between 8 μm and 20 μm; in a preferred embodiment, the thickness of the epitaxial layer 200 may be 10 μm. As shown in FIG. 2, there may be more impurity defects 300 at the interface between the substrate 100 and the epitaxial layer 200, and within the epitaxial layer 200, the impurity defects 300 including oxygen, carbon and goldImpurities such as genus, and COP defects.
In step S3, a first laser anneal is performed on the substrate 100 and the epitaxial layer 200 with a laser of a first wavelength. The action position of the first laser annealing is positioned on the interface of the substrate 100 and the epitaxial layer 200, and firstly impurities and defects positioned on the interface are removed; in specific implementation, the first wavelength of the laser light for performing the first laser annealing may be set according to the thickness of the epitaxial layer 200, and in the embodiment of the present invention, according to the thickness of the epitaxial layer 200 obtained in step S2, since the thickness of the epitaxial layer 200 is between 8 μm and 20 μm, the first wavelength may be set between 600nm and 1060nm, so as to ensure that the laser light with the first wavelength can act on the interface between the substrate 100 and the epitaxial layer 200. In an exemplary embodiment, the thickness of the epitaxial layer 200 is 10 μm, and the first wavelength may be set to 1060 nm. As shown in fig. 3, the first laser annealing is effective to reduce impurity defects 300 located at the interface in the semiconductor substrate.
In step S4, the epitaxial layer 200 is subjected to a second laser anneal with a second wavelength laser. The active site of the second laser anneal is within the epitaxial layer 200. Since the impurity defects 300 in the epitaxial layer 200 may be concentrated in the epitaxial layer 200 with a certain depth, the distance between the second laser annealing action position and the top surface of the epitaxial layer 200 is between 3 μm and 10 μm for the epitaxial layer 200 formed in step S2; in an exemplary embodiment, the thickness of the epitaxial layer 200 is 10 μm, and the distance between the active site of the second laser annealing and the top surface of the epitaxial layer 200 may be 5 μm. In a specific implementation, in order to control the action position of the second laser annealing, the second wavelength of the second laser annealing can be set to be between 100nm and 500nm, and the second wavelength is smaller than the first wavelength; in an exemplary embodiment, the thickness of the epitaxial layer 200 is 10 μm, and the second wavelength may be set to 300 nm. With the above arrangement, as shown in fig. 4, the second laser annealing can further remove the impurity defects 300 located in the epitaxial layer 200.
Moreover, in order to improve the efficiency of laser annealing, in the embodiment of the present invention, the laser used in the first laser annealing and/or the second laser annealing may be selected to be a wide emission domain laser, so that the laser can irradiate on the semiconductor substrate with a larger area to perform annealing, and has higher irradiation uniformity. In the invention, the first laser annealing and the second laser annealing are both carried out in a nitrogen atmosphere.
In addition, in order to further improve the efficiency of laser annealing, in an embodiment of the present invention, the method for manufacturing a semiconductor substrate may further include: forming a barrier layer on the epitaxial layer 200, wherein the barrier layer is used for defining a chip area for preparing an integrated circuit; the blocking layer may be a photoresist or a dielectric layer formed of a dielectric material such as silicon dioxide or silicon nitride, and the chip region is defined on the surface of the epitaxial layer 200 by a photolithography process. After the barrier layer is formed, the chip region is covered by the action region of the second laser annealing, so that the second laser annealing can be performed only in the region corresponding to the chip region, and the second laser annealing is not required to be performed on all the surfaces of the epitaxial layer 200, thereby improving the laser annealing efficiency.
As can be seen from the above description of the embodiments, the present invention provides a method for manufacturing a semiconductor substrate, by providing a substrate 100; forming an epitaxial layer 200 on the substrate 100; performing first laser annealing on the substrate 100 and the epitaxial layer 200 with laser of a first wavelength; performing second laser annealing on the epitaxial layer 200 by using laser with a second wavelength; wherein the first wavelength is greater than the second wavelength. The interface of the substrate 100 and the epitaxial layer 200 and the impurity defects 300 in the epitaxial layer 200 can be effectively removed by two times of laser annealing, so that the quality of the semiconductor substrate is effectively improved; in addition, laser annealing can be completed in a short time, and the manufacturing efficiency of the semiconductor substrate can be effectively improved.
In summary, the present invention provides a method for manufacturing a semiconductor substrate, in which the first laser annealing and the second laser annealing are matched with each other, so as to effectively remove the interface between the substrate 100 and the epitaxial layer 200 and the impurity defects 300 in the epitaxial layer 200; the laser annealing can be completed in a short time, so that the manufacturing efficiency of the semiconductor substrate is improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A method for manufacturing a semiconductor substrate, the method comprising:
providing a substrate;
forming an epitaxial layer on the substrate, wherein impurity defects are arranged on an interface between the substrate and the epitaxial layer and in the epitaxial layer, the impurities comprise oxygen, carbon and/or metal, and the defects comprise COP defects;
performing first laser annealing on the substrate and the epitaxial layer by using laser with a first wavelength, wherein the action position of the first laser annealing is positioned on the interface of the substrate and the epitaxial layer so as to remove the impurity defects on the interface;
performing second laser annealing on the epitaxial layer by using laser with a second wavelength, wherein the action position of the second laser annealing is positioned in the epitaxial layer so as to remove impurity defects in the epitaxial layer;
the first wavelength is greater than the second wavelength.
2. The method of claim 1, wherein a distance between an active site of the second laser annealing and the top surface of the epitaxial layer is between 3 μm and 10 μm.
3. The method of claim 1, wherein the first wavelength is between 600nm and 1060 nm.
4. The method of claim 1, wherein the second wavelength is between 100nm and 500 nm.
5. The method of claim 1, wherein the epitaxial layer has a thickness of 8 μm to 20 μm.
6. The method for manufacturing a semiconductor substrate according to claim 1,
before performing second laser annealing on the substrate and the epitaxial layer by using laser with a second wavelength, the method further includes:
forming a barrier layer on the epitaxial layer, wherein the barrier layer is used for defining a chip area for preparing an integrated circuit;
and performing second laser annealing on the epitaxial layer by using laser with a second wavelength, wherein the second laser annealing comprises the following steps:
the second laser annealed active region covers the chip region.
7. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first laser annealing and the second laser annealing are performed in a nitrogen atmosphere.
8. A method for manufacturing a semiconductor substrate according to claim 1, wherein the laser used for the first laser annealing and/or the second laser annealing is a wide emission region laser.
9. The method of manufacturing a semiconductor substrate according to claim 1, wherein the substrate is a silicon substrate, and the epitaxial layer is a silicon epitaxial layer.
10. The method of claim 9, wherein the silicon epitaxial layer is SiH4、SiH2Cl2、SiHCl3、SiCl4And Si2Cl6As a reaction gas.
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| CN201710208601.5A CN108666209B (en) | 2017-03-31 | 2017-03-31 | Manufacturing method of semiconductor substrate |
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| CN201710208601.5A CN108666209B (en) | 2017-03-31 | 2017-03-31 | Manufacturing method of semiconductor substrate |
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| CN108666209B true CN108666209B (en) | 2020-07-31 |
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