CN111564365A - Method for depositing film, application of method and method for forming semiconductor active region - Google Patents

Method for depositing film, application of method and method for forming semiconductor active region Download PDF

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Publication number
CN111564365A
CN111564365A CN202010280439.XA CN202010280439A CN111564365A CN 111564365 A CN111564365 A CN 111564365A CN 202010280439 A CN202010280439 A CN 202010280439A CN 111564365 A CN111564365 A CN 111564365A
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Prior art keywords
depositing
film
amorphous silicon
active region
forming
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Chinese (zh)
Inventor
李相遇
熊文娟
蒋浩杰
李亭亭
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Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
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Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
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Priority to CN202010280439.XA priority Critical patent/CN111564365A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment

Abstract

The invention relates to a method for depositing a film, application thereof and a method for forming a semiconductor active region. A method of depositing a thin film, comprising the steps of: depositing a seed crystal layer on the surface of the carrier, then removing impurities, and depositing a film; and the impurity removal adopts annealing treatment in a hydrogen atmosphere or remote hydrogen plasma surface treatment. The method can remove carbon and nitrogen impurities and improve the uniformity of the surface of the film.

Description

Method for depositing film, application of method and method for forming semiconductor active region
Technical Field
The invention relates to the field of semiconductor preparation, in particular to a method for depositing a film, application thereof and a method for forming a semiconductor active region.
Background
With the miniaturization of electronic devices, Dynamic Random Access Memory (DRAM) is an important element, and in the active manufacturing process, if active sidewall oxidation is directly performed after a trench is etched, an active region is thinned, and further, subsequent process defects are caused, for example, the contact area on the active region is reduced. In order to improve the phenomenon, after the groove is etched, amorphous silicon is deposited, and then a subsequent oxidation process is carried out, so that the problem that the top of the active region is thinned is solved. However, when the contact hole, the line, or the like is embedded with amorphous silicon, coverage of the contact hole portion with the amorphous silicon after film formation is poor, nano defects, pinholes, or the like are likely to occur, and roughness of the surface of the amorphous silicon film is large, as in the case of fig. 1 to 3. In order to improve the roughness of the surface of the amorphous silicon film, a seed layer is formed on the surface of the substrate before the amorphous silicon film is formed. The seed layer is usually formed by using an aminosilane gas (diisopropylaminosilane, bis (diethylamino) silane) as a precursor, and this causes impurities such as carbon and nitrogen to be introduced after the formation of the seed layer, resulting in a defective device.
Disclosure of Invention
The invention aims to provide a method for depositing a film, which can remove carbon and nitrogen impurities and improve the uniformity of the surface of an amorphous silicon film.
In order to achieve the above purpose, the invention provides the following technical scheme:
a method of depositing a thin film, comprising the steps of:
depositing a seed crystal layer on the surface of the carrier, then removing impurities, and depositing a film;
and the impurity removal adopts annealing treatment in a hydrogen atmosphere or remote hydrogen plasma surface treatment.
The principle of impurity removal of the method is as follows: the hydrogen or hydrogen plasma and the heteroatoms such as carbon, nitrogen and the like generate gas by-products at high temperature to remove impurities, thereby improving the quality of the film, improving the uniformity of the surface of the film and having better shape-preserving effect.
The above method can be used for manufacturing an integrated circuit device or a semiconductor device.
The present invention is not limited to the types of integrated circuit devices and semiconductor devices, and includes, but is not limited to, various types of memories, logic computing elements, and the like.
A method of forming a semiconductor active region, comprising:
providing a semiconductor substrate with an active area target pattern;
and depositing an amorphous silicon film on the surface of the active area target pattern by using the method described above.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings.
FIGS. 1-3 are three different topographical views of a prior art deposited amorphous silicon film;
FIG. 4 is a molecular structure diagram of DIPAS;
FIG. 5 is a schematic view of depositing a seed layer;
FIG. 6 is a graph of the resulting active area target pattern;
FIG. 7 is a graph of the surface of FIG. 6 after deposition of a silicon film;
FIG. 8 is a graph of the surface of the structure of FIG. 7 after oxidation.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
The amorphous silicon film deposited by the invention has the characteristics that: the method comprises the following steps of adding impurity removal before depositing a seed crystal layer and depositing an amorphous silicon film, specifically:
depositing a seed crystal layer on the carrier, then removing impurities, and then depositing an amorphous silicon film;
and the impurity removal adopts annealing treatment in a hydrogen atmosphere or remote hydrogen plasma surface treatment.
The deposition of the seed layer before the deposition of the amorphous silicon film is intended to solve the problem of carrier and amorphous silicon heterogeneity, which is a main cause of occurrence of pinholes and large surface roughness.
The carrier may be a semiconductor carrier such as an etched or unetched wafer, or may be any other substrate.
The precursor used for the seed layer is a silicon-containing compound, and usually, an aminosilicone-based gas capable of stably adsorbing silicon on a silicon substrate is used.
Useful aminosilicone-based gases include, but are not limited to, at least one of the following:
butylaminosilane, bis (tert-butylamino) silane, dimethylaminosilane, bis (dimethylamino) silane, tris (dimethylamino) silane, diisopropylaminosilane, bis (diethylamino) silane, hexaethylaminodisilane.
Of these, diisopropylaminosilane (DIPAS, molecular structure shown in fig. 4, trade name LTO520) and bis (diethylamino) silane (trade name sam.24) are commonly used. The example of fig. 5 employs DIPAS as the precursor.
After the seed layer is deposited, the carrier may be annealed in a hydrogen atmosphere to remove impurities. The annealing conditions (temperature, pressure, holding time, etc.) may depend on the chemical composition of the seed layer and the deposition conditionsSegment by segment. When the seed layer is formed by vapor deposition, for example, annealing conditions are suitably employed: the heat preservation temperature is 400-600 ℃, the pressure is 0.1-200 torr, and the heat preservation time is less than or equal to 30 min. Because of the high temperature heat preservation requirement of annealing, the method is generally completed in one step, namely hydrogen H is carried out after the seed crystal layer step is completely completed2And (5) performing annealing treatment.
After the seed crystal layer is deposited, the purpose of removing impurities can be achieved by adopting remote hydrogen plasma surface treatment. The impurity removal by hydrogen plasma can be carried out continuously or in a pulse mode, for example, the seed crystal layer deposition and the hydrogen plasma surface treatment are carried out in an alternating cycle, or the hydrogen plasma surface treatment is carried out after the seed crystal layer deposition step is completed completely. The purpose of removing impurities can be achieved by adopting any mode.
For most semiconductor devices, after impurity removal, the requirement can be met if the atomic percentage content of carbon and nitrogen in the seed crystal layer is less than 1%.
The deposition of the amorphous silicon thin film is continued after impurity removal, usually by a chemical vapor deposition method, and the adopted gas is a silane system gas, including but not limited to: silane, disilane, trisilane, butylsilane, pentylsilane, hexylsilane, heptylsilane, cyclopropylsilane, cycloethylsilane, cyclopropylsilane, cyclobutylsilane, cyclopentylsilane, etc., with disilane being more commonly used.
The annealing treatment under the hydrogen atmosphere or the remote hydrogen plasma surface treatment can realize in-situ treatment so as to reduce the process difficulty.
The method for depositing the amorphous silicon film is suitable for any device needing the amorphous silicon film, especially for the device needing the amorphous silicon film
Figure BDA0002446382330000041
Among the following devices of amorphous silicon thin films, these devices have higher requirements on the quality of the thin films. Such devices include, but are not limited to, integrated circuit devices or semiconductor devices, such as DRAM, 2D NAND, 3D NAND or LCD, etc.
According to one embodiment of the present invention, there is provided a method of applying the above-described techniques to the formation of DRAM active regions.
After the shallow trench is formed (i.e. the target pattern of the active region is formed), the structure shown in fig. 6 is obtained, and the deposition method according to any of the above embodiments of the present invention is used to deposit a silicon thin film on the surface of the structure shown in fig. 6, i.e. to deposit a seed layer, anneal/H plasma process, and deposit a thin film, so as to form the structure shown in fig. 7, wherein the surface of the thin film 101 has a uniform morphology, and the atomic percentage content of carbon and nitrogen impurities reaches 1% or less. The structure shown in fig. 8, oxide layer 102, is then formed by depositing an oxide using ALD or the like, an oxidation process, and the like.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.

Claims (9)

1. A method of depositing a thin film, comprising the steps of:
depositing a seed crystal layer on the surface of the carrier, then removing impurities, and depositing a film;
and the impurity removal adopts annealing treatment in a hydrogen atmosphere or remote hydrogen plasma surface treatment.
2. The method of claim 1, wherein the film has a thickness of
Figure FDA0002446382320000011
The following.
3. The method of claim 1, wherein the seed layer is deposited using a precursor of at least one of: diisopropylaminosilane, bis (diethylamino) silane.
4. The method of claim 1, wherein the precursor for depositing the film is at least one of silane, disilane, trisilane, and tetrasilane.
5. The method according to any one of claims 1 to 4, wherein the annealing treatment under the hydrogen atmosphere has the following process conditions: the heat preservation temperature is 400-600 ℃, the pressure is 0.1-200 torr, and the heat preservation time is less than or equal to 30 min.
6. The method according to any one of claims 1 to 4, wherein the remote hydrogen plasma surface treatment is performed by pulsing or continuously supplying the plasma.
7. A method according to any of claims 1 to 4, wherein the reject is treated in situ.
8. Use of the method of any one of claims 1-7 in the manufacture of an integrated circuit device or a semiconductor device.
9. A method of forming an active region, comprising:
active regions and field regions are formed in a module process,
wherein, when forming the trench profile of the field region, an amorphous silicon film is formed by the method of any one of claims 1 to 7;
the amorphous silicon film is formed in the previous stage of forming the unit gate.
CN202010280439.XA 2020-04-10 2020-04-10 Method for depositing film, application of method and method for forming semiconductor active region Pending CN111564365A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114657515A (en) * 2022-05-24 2022-06-24 成都高真科技有限公司 Seed crystal layer impurity removing method for DRAM (dynamic random Access memory) evaporation process

Citations (10)

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US5198371A (en) * 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
CN1255742A (en) * 1993-02-03 2000-06-07 株式会社半导体能源研究所 Semiconductor mfg. tech, and tech. for mfg. semiconductor device
CN101609796A (en) * 2008-06-20 2009-12-23 福建钧石能源有限公司 The manufacture method of film formation method and thin-film solar cells
CN102347266A (en) * 2010-07-29 2012-02-08 东京毅力科创株式会社 Trench-filling method and film-forming system
JP2012028741A (en) * 2010-06-22 2012-02-09 Tokyo Electron Ltd Film forming method and film forming device
CN102386090A (en) * 2010-08-26 2012-03-21 三星移动显示器株式会社 Method of forming polycrystalline silicon layer and thin film transistor and organic light emitting device
CN103088311A (en) * 2011-10-28 2013-05-08 东京毅力科创株式会社 Method of forming seed layer and method of forming silicon-containing thin film
CN103681480A (en) * 2013-12-22 2014-03-26 复旦大学 Method and application for preparing ultra-thin copper seed layer by processing surfaces of hydrogen plasmas
CN104347353A (en) * 2013-07-31 2015-02-11 东京毅力科创株式会社 Silicon film forming method, thin film forming method and cross-sectional shape control method
TW201822257A (en) * 2016-09-19 2018-06-16 台灣積體電路製造股份有限公司 Method of forming a Group III-V semiconductor layer on a Si substrate

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198371A (en) * 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
CN1255742A (en) * 1993-02-03 2000-06-07 株式会社半导体能源研究所 Semiconductor mfg. tech, and tech. for mfg. semiconductor device
CN101609796A (en) * 2008-06-20 2009-12-23 福建钧石能源有限公司 The manufacture method of film formation method and thin-film solar cells
JP2012028741A (en) * 2010-06-22 2012-02-09 Tokyo Electron Ltd Film forming method and film forming device
CN102347266A (en) * 2010-07-29 2012-02-08 东京毅力科创株式会社 Trench-filling method and film-forming system
CN102386090A (en) * 2010-08-26 2012-03-21 三星移动显示器株式会社 Method of forming polycrystalline silicon layer and thin film transistor and organic light emitting device
CN103088311A (en) * 2011-10-28 2013-05-08 东京毅力科创株式会社 Method of forming seed layer and method of forming silicon-containing thin film
CN104347353A (en) * 2013-07-31 2015-02-11 东京毅力科创株式会社 Silicon film forming method, thin film forming method and cross-sectional shape control method
CN103681480A (en) * 2013-12-22 2014-03-26 复旦大学 Method and application for preparing ultra-thin copper seed layer by processing surfaces of hydrogen plasmas
TW201822257A (en) * 2016-09-19 2018-06-16 台灣積體電路製造股份有限公司 Method of forming a Group III-V semiconductor layer on a Si substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114657515A (en) * 2022-05-24 2022-06-24 成都高真科技有限公司 Seed crystal layer impurity removing method for DRAM (dynamic random Access memory) evaporation process

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Application publication date: 20200821