CN108663100A - The production method of flow standard device module - Google Patents
The production method of flow standard device module Download PDFInfo
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- CN108663100A CN108663100A CN201711457473.4A CN201711457473A CN108663100A CN 108663100 A CN108663100 A CN 108663100A CN 201711457473 A CN201711457473 A CN 201711457473A CN 108663100 A CN108663100 A CN 108663100A
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- ltcc ceramic
- device module
- standard device
- ceramic substrates
- shell
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F25/00—Testing or calibration of apparatus for measuring volume, volume flow or liquid level or for metering by volume
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- General Physics & Mathematics (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The present invention relates to micropackaging Circuit assembly technical field, the production method for disclosing flow standard device module, including：1, the resistance value that LTCC ceramic substrates are carried out to break-make and thick-film resistor is tested, and checks the appearance and size and appearance of shell and cover board；2, LTCC ceramic substrates, shell and cover board are cleaned, and is dried；3, LTCC ceramic substrates are positioned in the shell for being provided with epoxy black glue, and gently squeeze bonding, bonding shell and LTCC ceramic substrates are positioned in vacuum drying oven and are cured；4, bare chip, resistance and capacitance conductive silver glue are mounted onto LTCC ceramic substrates, and hot setting is carried out using vacuum drying oven；5, the LTCC ceramic substrates of hot setting are subjected to plasma cleaning, gold wire bonding and electric performance test, obtain flow standard device module.The production method of the flow standard device module has the characteristics that small, reliability is high, shock resistance is strong.
Description
Technical field
The present invention relates to micropackaging Circuit assembly technical fields, and in particular, to the production method of flow standard device module.
Background technology
Domestic hydrid integrated circuit is mostly made using traditional pcb board and discrete device at present, and circuit integrates
Spend relatively low, and the area of circuit, volume are larger, and stability is relatively poor.With the rapid development of thickness membrane technology, make highly dense
Degree, high reliability, superperformance and small size Novel electronic devices have become inexorable trend.
How a kind of flow standard device module is designed, and production method is simple, and reliability is high, becomes a current disaster
Topic.
Invention content
The object of the present invention is to provide a kind of production method of flow standard device module, the making of the flow standard device module
Method has the characteristics that small, reliability is high, shock resistance is strong.
To achieve the goals above, the present invention provides a kind of production method of flow standard device module, the flow standard device
The production method of module includes：
Step 1, the resistance value for LTCC ceramic substrates being carried out to break-make and thick-film resistor is tested, and checks the outer of shell and cover board
Shape size and appearance；
Step 2, LTCC ceramic substrates, shell and cover board are cleaned, and is dried；
Step 3, LTCC ceramic substrates are positioned in the shell for being provided with epoxy black glue, and gently squeeze bonding, will glued
The shell and LTCC ceramic substrates connected is positioned in vacuum drying oven and is cured；
Step 4, bare chip, resistance and capacitance conductive silver glue are mounted onto LTCC ceramic substrates, and is dried using vacuum
Case carries out hot setting；
Step 5, the LTCC ceramic substrates of hot setting are subjected to plasma cleaning, gold wire bonding and electric performance test, obtained
To flow standard device module.
Preferably, in step 2, LTCC ceramic substrates, shell and cover board are placed into glassware absolute ethyl alcohol respectively
It impregnates, and is placed into baking oven and is dried.
Preferably, in step 2, oven temperature is set as 45 DEG C~55 DEG C, and continues 15min~20min.
Preferably, in step 3, the temperature setting of vacuum drying oven be 150 DEG C~180 DEG C, and the time be set as 1h~
1.5h。
Preferably, in step 4, hot setting temperature is 100 DEG C~150 DEG C, and hardening time is 1.5h~2.5h.
Preferably, in steps of 5, the method for plasma cleaning includes：
It is cleaned using inert gas argon gas, and the power of plasma cleaning is 500W, scavenging period 1-2min.
Preferably, in steps of 5, the method for gold wire bonding includes：
It is 25.4 μm of spun gold to select specification, first carries out the gold wire bonding between bare chip and LTCC ceramic circuit boards,
Then the pin leads of shell and LTCC ceramic circuit boards are interconnected.
Through the above technical solutions, first with cleaning LTCC ceramic substrates and shell, cover board in ethyl alcohol into
Row cleaning carries out baking processing, and then LTCC ceramic substrates are adhered in metal shell using Micro-package technique；Selection is suitable
Bare chip replace original packaged separate chip, select the ceramic condenser and resistance of suitable parameters；By these bare chips,
Resistance and capacitance attachment are needed spot therein and miscellaneous through plasma cleaning process after bonding to LTCC ceramic substrates
Object washes；Electrical connection, ceramic substrate and the shell pin of bare chip and LTCC ceramic substrates are completed by gold wire bonding again
Electrical connection, after the test passes of the semi-finished product of module using parallel sealing technique carry out air-tight packaging, finally utilize
Laser marking machine carries out laser marking so that flow standard device module is made to module.The flow standard device module has volume
The features such as small, light-weight, reliability is high.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Description of the drawings
Attached drawing is to be used to provide further understanding of the present invention, an and part for constitution instruction, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the structure chart for the flow standard device module for illustrating a kind of preferred embodiment of the present invention；
Fig. 2 is the separate block diagram for the flow standard device module for illustrating a kind of preferred embodiment of the present invention；
Fig. 3 is the flow standard device module circuit schematic for illustrating a kind of preferred embodiment of the present invention；And
Fig. 4 is the flow standard device module pinouts for illustrating a kind of preferred embodiment of the present invention.
Reference sign
1 shell, 2 LTCC ceramic substrates
3 cover boards
Specific implementation mode
The specific implementation mode of the present invention is described in detail below in conjunction with attached drawing.It should be understood that this place is retouched
The specific implementation mode stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
The present invention provides a kind of production method of flow standard device module, the production method packet of the flow standard device module
It includes：
Step 1, the resistance value for LTCC ceramic substrates 2 being carried out to break-make and thick-film resistor is tested, and checks shell 1 and cover board 3
Appearance and size and appearance；
Step 2, LTCC ceramic substrates 2, shell 1 and cover board 3 are cleaned, and is dried；
Step 3, LTCC ceramic substrates 2 are positioned in the shell 1 for being provided with epoxy black glue, and gently squeeze bonding, it will
Bonding shell 1 and LTCC ceramic substrates 2 is positioned in vacuum drying oven and is cured；
Step 4, bare chip, resistance and capacitance conductive silver glue are mounted onto LTCC ceramic substrates 2, and is dried using vacuum
Case carries out hot setting；
Step 5, the LTCC ceramic substrates 2 of hot setting are subjected to plasma cleaning, gold wire bonding and electric performance test, obtained
To flow standard device module.
Flow standard device modular circuit includes oscillating circuit and detector amplifier, and operation principle is as follows：In self-test
When state, oscillating circuit generates self-test signal after OFF signal is established in outside addition by cable, and complete machine is according to self-test signal judgment module
No normal work；When in normal operating conditions, oscillating circuit oscillation generates a carrier signal and gives external coil sensor, examines
Wave amplifying circuit carries out detection and enhanced processing by the amplitude-modulated signal exported to external coil pickoff, last outputting standard
Square wave sequence signal.Oscillating circuit is by operational amplifier M6~M8, diode D1~D4, resistance R19~R30, capacitance C7, C8 group
At after oscillator signal input, M6 oscillations generate sine wave signal and pass through full bridge rectifier and integral transformation circuit output square wave
Signal and d. c. voltage signal；Detecting circuit is by operational amplifier M1~M5, triode T1~T4, resistance R1~R18, capacitance C1
~C5 compositions, compare by operation amplifier circuit after envelope signal input, amplify, conversion process finally obtains a square wave
Sequence signal.
There are two functions for flow standard device module tool：(1) self-test signal is provided；(2) oscillation generates carrier signal and will pass
Sensor output amplitude-modulated signal detection at standard square wave sequence signal.
In a kind of specific implementation mode of the present invention, in step 2, LTCC ceramic substrates 2, shell 1 and cover board 3 are divided
Not Fang Zhi glassware soaked in absolute ethyl alcohol, and be placed into baking oven and dried.
In this kind of embodiment, in step 2, oven temperature is set as 45 DEG C~55 DEG C, and continue 15min~
20min。
The flow standard device module making method is as follows
1) Can 11, LTCC ceramic substrates 22 can be cut down and metal cover board 33 can be cut down and advised respectively according to the inspection of raw and process materials
Model, which is tested, can cut down Can 11 and can cut down appearance and size and the visual examination of metal cover board 33；To LTCC ceramic substrates 22
Thick-film resistor resistance value carry out test and process certification.
2) Can 11, LTCC ceramic substrates 22 can be cut down and metal cover board 33 can be cut down and carry out surface clean, after cleaning
Shell 1 and cover board 3 are dried up with nitrogen, and LTCC ceramic substrates 22 need to place baking oven drying, and oven temperature is 45 DEG C~55
DEG C, drying time 15min~20min, preferably oven temperature are 50 DEG C, time 15min.
3) suitable epoxy black glue is taken with syringe, 1 inner bottom surface of Can be cut down by being coated uniformly on, with tweezers LTCC
Ceramic substrate 22 is placed into shell 1 and moves back and forth the friction for increasing substrate and shell 1, so that LTCC ceramic substrates 2 can
Preferably it is adhered to shell 1, bonding shell 1 places vacuum drying oven, 150 DEG C~180 DEG C of vacuum drying oven temperature, when vacuum drying oven
Between：1h~1.5h, preferably oven temperature are 150 DEG C, time 1h.
4) bare chip, resistance and capacitance are adhered to conductive silver glue on LTCC ceramic substrates 22 according to installation diagram, it is conductive
Between elargol solidification temperature is 100 DEG C~150 DEG C, 1~2 hour hardening time, preferred consolidation temperature is 120 DEG C, hardening time
For 2h.
5) it will be stained with the component of component shell 1, cleaned with plasma cleaner, plasma cleaning inert gas argon gas
It is cleaned, cleaning power is 500W, and scavenging period is 1min~3min；Improve bare chip, ceramic circuit board and metal
The surface property of pad in shell pin leads makes it be more easy to carry out gold wire bonding.
6) it is 25.4 μm of spun gold to select specification, using wedge bonding technique, two-wire gold wire bonding mode；Carry out bare chip
Gold wire bonding between ceramic circuit board, it is then mutual between the pin leads and ceramic circuit board of realization metal shell
Even, the interconnection of entire circuit module is completed；
7) component of gold wire bonding is subjected to electric performance test according to detail specification, filters out substandard product, it is unqualified
Product can carry out repair of doing over again；Electrical property qualified component will be filtered out using parallel soldering and sealing and carry out air-tight packaging, airtight
Property encapsulation before need the component after gold wire bonding to be placed into parallel welder and carry out high-temperature baking, baking temperature is 120 DEG C
~140 DEG C, baking time is 23h~25h, and preferably baking temperature is 125 DEG C, and baking time is for 24 hours；
8) packaged flow standard device module is subjected to air tight test, after screening is qualified, according to Can 1 can be cut down
With the thickness and material selection suitable parameters laser marking of cover board 3；Then module carries out screening test and inspection according to detail specification
Experiment is tested, can be put in storage after pass the test, flow standard device module making is completed.
In a kind of specific implementation mode of the present invention, in step 3, the temperature setting of vacuum drying oven is 150 DEG C~180
DEG C, and the time be set as 1h~1.5h.
In a kind of specific implementation mode of the present invention, in step 4, hot setting temperature is 100 DEG C~150 DEG C, and
Hardening time is 1.5h~2.5h.
In a kind of specific implementation mode of the present invention, in steps of 5, the method for plasma cleaning includes：
It is cleaned using inert gas argon gas, and the power of plasma cleaning is 500W, scavenging period 1-2min.
In a kind of specific implementation mode of the present invention, in steps of 5, the method for gold wire bonding includes：
It is 25.4 μm of spun gold to select specification, first carries out the gold wire bonding between bare chip and LTCC ceramic circuit boards,
Then the pin leads of shell and LTCC ceramic circuit boards are interconnected.
The flow standard device circuit with reference to known to figure 3 forms electricity by the discrete devices such as operational amplifier and triode, diode
Road.
Fig. 4 is each pin schematic diagram of module, and each exit function of module is defined as follows table
Flow standard device module is divided into oscillating circuit and detecting circuit, and oscillating circuit is that have 13 foot of oscillator signal input terminal defeated
Enter signal, sine wave signal is generated by the oscillation of operational amplifier M6, sine wave signal passes through rectification circuit and integrating circuit
It handles oscillation output end 4 and exports square-wave signal, oscillation output end 2 exports DC voltage.
Detecting circuit part is by inputting envelope signal by external signal input terminals 12, by operational amplifier M1~M5
Detection processing is carried out, last signal detection output end 6 exports square wave sequence signal.
7 feet, 8 feet, 10 feet are power supply+5V feeder ears ,+15V feeder ears, -15V feeder ears respectively, and 5 feet, 9 feet are all power supplys
Negative terminal；15 feet are connected with shell 1.
The preferred embodiment of the present invention is described in detail above in association with attached drawing, still, the present invention is not limited to above-mentioned realities
The detail in mode is applied, within the scope of the technical concept of the present invention, a variety of letters can be carried out to technical scheme of the present invention
Monotropic type, these simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case of shield, can be combined by any suitable means, in order to avoid unnecessary repetition, the present invention to it is various can
The combination of energy no longer separately illustrates.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should also be regarded as the disclosure of the present invention.
Claims (7)
1. a kind of production method of flow standard device module, which is characterized in that the production method of the flow standard device module includes：
Step 1, the resistance value for LTCC ceramic substrates being carried out to break-make and thick-film resistor is tested, and checks the shape ruler of shell and cover board
Very little and appearance；
Step 2, LTCC ceramic substrates, shell and cover board are cleaned, and is dried；
Step 3, LTCC ceramic substrates are positioned in the shell for being provided with epoxy black glue, and gently squeeze bonding, it will be bonding
Shell and LTCC ceramic substrates be positioned in vacuum drying oven and cured；
Step 4, bare chip, resistance and capacitance conductive silver glue are mounted on LTCC ceramic substrates, and using vacuum drying oven into
Row hot setting；
Step 5, the LTCC ceramic substrates of hot setting are subjected to plasma cleaning, gold wire bonding and electric performance test, are flowed
Measure standard module.
2. the production method of flow standard device module according to claim 1, which is characterized in that in step 2, by LTCC
Ceramic substrate, shell and cover board place glassware soaked in absolute ethyl alcohol respectively, and are placed into baking oven and are dried.
3. the production method of flow standard device module according to claim 2, which is characterized in that in step 2, by baking oven
Temperature setting is 45 DEG C~55 DEG C, and continues 15min~20min.
4. the production method of flow standard device module according to claim 1, which is characterized in that in step 3, vacuum is dried
The temperature setting of case is 150 DEG C~180 DEG C, and the time is set as 1h~1.5h.
5. the production method of flow standard device module according to claim 1, which is characterized in that in step 4, high temperature is solid
It is 100 DEG C~150 DEG C to change temperature, and hardening time is 1.5h~2.5h.
6. the production method of flow standard device module according to claim 1, which is characterized in that in steps of 5, plasma
The method of cleaning includes：
It is cleaned using inert gas argon gas, and the power of plasma cleaning is 500W, scavenging period 1-2min.
7. the production method of flow standard device module according to claim 1, which is characterized in that in steps of 5, spun gold key
The method of conjunction includes：
It is 25.4 μm of spun gold to select specification, first carries out the gold wire bonding between bare chip and LTCC ceramic circuit boards, then
The pin leads of shell and LTCC ceramic circuit boards are interconnected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711457473.4A CN108663100A (en) | 2017-12-28 | 2017-12-28 | The production method of flow standard device module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711457473.4A CN108663100A (en) | 2017-12-28 | 2017-12-28 | The production method of flow standard device module |
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| Publication Number | Publication Date |
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| CN108663100A true CN108663100A (en) | 2018-10-16 |
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| CN201711457473.4A Pending CN108663100A (en) | 2017-12-28 | 2017-12-28 | The production method of flow standard device module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111489998A (en) * | 2020-04-15 | 2020-08-04 | 深圳市澜垣半导体有限公司 | Chip fixing method of power transistor, power transistor and amplifier |
| CN111883434A (en) * | 2020-08-07 | 2020-11-03 | 安徽华东光电技术研究所有限公司 | Flow standard device module manufacturing process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157499A (en) * | 2010-12-15 | 2011-08-17 | 安徽华东光电技术研究所 | Hybrid integrated circuit module based on low temperature co-fired ceramic technology and manufacturing method thereof |
| CN102157498A (en) * | 2010-12-15 | 2011-08-17 | 安徽华东光电技术研究所 | Hybrid integrated circuit module and manufacturing method thereof |
| CN105609427A (en) * | 2015-12-18 | 2016-05-25 | 安徽华东光电技术研究所 | Method for manufacturing semiconductor integrated circuit dual-voltage comparator module |
-
2017
- 2017-12-28 CN CN201711457473.4A patent/CN108663100A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157499A (en) * | 2010-12-15 | 2011-08-17 | 安徽华东光电技术研究所 | Hybrid integrated circuit module based on low temperature co-fired ceramic technology and manufacturing method thereof |
| CN102157498A (en) * | 2010-12-15 | 2011-08-17 | 安徽华东光电技术研究所 | Hybrid integrated circuit module and manufacturing method thereof |
| CN105609427A (en) * | 2015-12-18 | 2016-05-25 | 安徽华东光电技术研究所 | Method for manufacturing semiconductor integrated circuit dual-voltage comparator module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111489998A (en) * | 2020-04-15 | 2020-08-04 | 深圳市澜垣半导体有限公司 | Chip fixing method of power transistor, power transistor and amplifier |
| CN111883434A (en) * | 2020-08-07 | 2020-11-03 | 安徽华东光电技术研究所有限公司 | Flow standard device module manufacturing process |
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Application publication date: 20181016 |
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