CN108649301A - A kind of broadband MEMS interdigital filters and preparation method thereof - Google Patents
A kind of broadband MEMS interdigital filters and preparation method thereof Download PDFInfo
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- CN108649301A CN108649301A CN201810333330.0A CN201810333330A CN108649301A CN 108649301 A CN108649301 A CN 108649301A CN 201810333330 A CN201810333330 A CN 201810333330A CN 108649301 A CN108649301 A CN 108649301A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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Abstract
The present invention provides a kind of broadband MEMS interdigital filters and preparation method thereof, broadband MEMS interdigital filters include silicon chip, the silicon chip is equipped at least one frustum of a pyramid shape through-hole for being used to form grounding through hole structure, the silicon chip upper surface is equipped with front electrode figure, interchangeable input/output interface is equipped at left and right sides of the silicon chip, fluted with front electrode figure opposite position etching on silicon chip lower surface, depth of groove is silicon wafer thickness 40 60%.By changing corresponding material dielectric constant in silicon chip back etched recesses, magnetic distribution is influenced, to realize higher relative bandwidth.Also the present invention is prepared by silicon micro-machining technology, small, the low, high-performance of loss, can batch micro operations, and grounding through hole is etched using wet corrosion technique, had relative to dry etching more inexpensive.
Description
Technical field
The present invention relates to wireless communication hardware equipment technical field more particularly to a kind of interdigitated microwave filterings of broadband MEMS
Device preparation method.
Background technology
Microwave filter is a kind of device for detaching different frequency microwave signal.Its main function is to inhibit to be not required to
The signal wanted prevents it from by filter, the signal of needs only being allowed to pass through.It is widely used in microwave communication, radar, electronics
In confrontation and microwave measuring instrument, it is used for controlling the frequency response of signal in systems, makes useful signal frequency component almost
Undampedly by filter, and block the transmission of garbage signal frequency component.Filter can divide according to the width of working band
For narrowband and broadband filter；It can be divided into microstrip filter, interdigital filter, coaxial filtering by the transmission line classification of filter
Device, waveguide filter, pectinate line cavity filter, spiral cavity filter, small-sized lumped wave filter etc..As modern microwave is logical
Letter, the especially development of satellite communication and mobile communication, system is higher and higher to the selectivity in channel, this is to microwave filter
More stringent requirements are proposed for design, and microwave filter is used as the pith in communication system, the good and bad of performance often to determine
The quality of entire communication system is determined.Therefore the performance indicator and design method of research microwave filter are of great significance.Its
In, interdigital filter Q values are higher, volume is moderate.The filter of 5%~60% band logical can be achieved in the frequency range of 0.5~18GHz
Wave is widely used in various military, civilian electronic products.Interdigital filter is generally formed by metal entirety cutting processing, structure jail
Gu stable and reliable for performance.Interdigital filter is a kind of improvement to Coupled Miccrostrip Lines filter, is equally to reduce micro-strip
The volume that filter occupies.It has the following advantages：It is compact-sized, reliability is high；Since the interval between each resonator is larger,
Therefore tolerance is relatively low, easy to manufacture；Since resonant rod length is approximately equal to 1/4 λ 0, so the second bandpass center is in 30 or more ω,
Spurious response is not had therebetween.Since interdigital filter can not only make printed circuit form, but also cavity body structure can be made, used
Thicker bar makes self-supported, and does not have to medium.Therefore, interdigital filter is in electronic system, especially in the communication technology and
It is widely used in modern age aerospace field.The operation principle of interdigitated microstrip bandpass filter can be explained in this way:It will put down
Row lotus root closes two adjacent lotus root zygonema sections of microstrip filter and is cut off from midpoint, and folding gets up, and merges into a lotus root zygonema section,
It by one end short circuit grounding, other end open circuit, and keeps the lotus root conjunction gap between adjacent two-stage line section constant, forms interdigitated knot
Structure.
Over the past decade, with MEMS（MEMS）The maturation of technique and MEMS device gives the collection of microwave filter
It is filled with new vitality at change.Compared with traditional VLSI techniques, MEMS technology, can be under the premise of not sacrifice device performance
Realize the integrated of microwave passive component.Microwave MEMS filter based on MEMS technology not only there is excellent frequency to select energy
Power（High Q）With low insertion loss, and in volume be much smaller than conventional microwave filters, be easily integrated, be microwave monolithic collection
It haves laid a good foundation at the realization of system, MEMS filter has become the hot spot studied both at home and abroad.
Domestic conventional MEMS silicon substrate microstrip filters at present, when relative bandwidth is larger（>50%）, higher in order to realize
Resonator（It is interdigital）Between couple, need reduce resonator between spacing.And with the reduction of this spacing, the processing to device
Precision is put forward higher requirements, and is unfavorable for the preparation of device.Meanwhile in the case of the relative bandwidth of bigger, it is possible to even if two is humorous
The device that shakes is very close, can not realize corresponding stiffness of coupling, conventional microstrip coupled form is caused to cannot achieve greatly
The filter of bandwidth.
Therefore, on the basis of existing technology, it is still necessary to which design is a kind of to be not required to reduce resonator spacing, do not increasing processing
, it can be achieved that the MEMS interdigital filters to bandwidth of higher phase in the case of difficulty.
Invention content
A kind of preparation method of broadband MEMS interdigital filters provided by the invention can be directed to the prior art not
Foot, solves the problems, such as to be not easy to realize big relative bandwidth in the prior art.
A kind of broadband MEMS interdigital filters, including silicon chip, the silicon chip are used to form ground connection equipped at least one
The frustum of a pyramid shape through-hole of through-hole structure, the silicon chip upper surface is equipped with front electrode figure, there are two the silicon chip upper surface is set
Device input/output interface, fluted with front electrode figure opposite position etching on silicon chip lower surface, depth of groove is
Silicon wafer thickness 40-60%.
The silicon chip is 100 crystal orientation silicon chips.
The front electrode figure can be interdigitated electrodes figure.
The silicon chip upper surface is set there are two interchangeable CPWG input/output interfaces, and CPWG input/output interfaces are distinguished
Positioned at silicon chip upper surface close to the position of the left and right sides, convenient for being connect with external circuit by routing.
The preparation method of above-mentioned broadband MEMS interdigital filters, this method include following preparation process：
(1) silicon chip is provided, is prepared using wet anisotropic etching process on silicon chip, it is logical to form at least one frustum of a pyramid shape
Hole；
(2) in silicon chip upper surface sputtering seed layer, in seed layer photomask surface front electrode figure and device input/output interface,
Then plating front electrode figure, device input/output interface and frustum of a pyramid shape through-hole form the front electrode figure that plating thickeies
The frustum of a pyramid shape through-hole of shape, device input/output interface and internal side wall metallization；
(3) in the lower surface sputtering seed layer of above-mentioned silicon chip, in seed layer photomask surface and backplate figure is electroplated, back side electricity
Region except pole figure shape is etched area, and the shape of etched area is corresponding with the front electrode figure of silicon chip upper surface, then goes
Except the seed layer of etched area, the back electrode pattern that plating thickeies is formed；
(4) etched area on silicon chip lower surface etches groove, and last scribing obtains the single interdigitated filtering of broadband MEMS
Device.
The preparation method of above-mentioned broadband MEMS interdigital filters, this method include following preparation process：
(1) silicon chip is provided, deposits dielectric film in the upper and lower surface of silicon chip, used process equipment is LPCVD, and reaction gas is
SiH2Cl2And NH3, 850-950 DEG C of technological temperature；Using dielectric film as masking layer, photoetching is distinguished in the upper and lower surface of the silicon chip
And etch media film, form corrosion window；Then it is protected in the protective coating of one layer of resistance to KOH corrosion of the surface spin coating of silicon chip
Marginal position is not corroded, and uses the KOH solution of 30-50% as corrosive liquid, is corroded by corrosion window in 60-100 DEG C of temperature
Silicon chip forms through-hole, then removes above-mentioned protective coating；
(2) it in the upper surface sputtering seed layer of silicon chip, is connect in seed layer photomask surface front electrode figure and device input and output
Mouthful, and the electrode pattern, device input/output interface and the conical through-hole is electroplated, form the front electrode figure that plating thickeies
The frustum of a pyramid shape through-hole of shape, device input/output interface and internal side wall metallization；
(3) in the lower surface sputtering seed layer of above-mentioned silicon chip, in seed layer photomask surface and backplate figure is electroplated, back side electricity
Region except pole figure shape is etched area, and the shape of etched area is corresponding with the front electrode figure of silicon chip upper surface, then goes
Except the seed layer of etched area, the back electrode pattern that plating thickeies is formed；
(4) etched area on silicon chip lower surface etches groove, and the depth of groove is silicon wafer thickness 40-60%, and last scribing obtains
Obtain broadband MEMS interdigital filters individually.
The seed layer is chromium gold complex metal layer, titanium complex metal layer or titanium tungsten gold complex metal layer.
The dielectric film is the silicon nitride film or silicon oxide film of stress≤200MPa.
The material of the protective coating is paraffin, Chinese wax or Crystalbond 59.
The step（1）In, the protective coating is removed by acetone or alcohol.
Advantageous effect：The broadband MEMS interdigital filters of the present invention are changed by eliminating the silicon substrate below front
Corresponding material dielectric constant, influences magnetic distribution, to realize higher relative bandwidth.Also the present invention passes through silicon
It is prepared by miromaching, small, the low, high-performance of loss, can batch micro operations, and connect using wet corrosion technique etching
Ground through-hole has more inexpensive relative to dry etching.
Description of the drawings
Fig. 1 is the positive structure schematic of the broadband MEMS interdigital filters of the embodiment of the present invention 1；
Fig. 2 is the structure schematic diagram of the broadband MEMS interdigital filters of the embodiment of the present invention 1；
Fig. 3 is the structure change schematic diagram in the broadband MEMS interdigital filter preparation process of the embodiment of the present invention 1.
Fig. 4 is the broadband MEMS interdigital filters of the embodiment of the present invention 2（Unslotted）Test design sketch；
Fig. 5 is the broadband MEMS interdigital filters of the embodiment of the present invention 1（Fluting）Test design sketch.
Reference numeral：101 be silicon chip, and 102 be through-hole, and 103 be electrode pattern, and 104 be device input/output port.
Specific implementation mode
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
It is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
The every other embodiment that personnel are obtained without making creative work, shall fall within the protection scope of the present invention.
Embodiment 1
A kind of broadband MEMS interdigital filters provided in this embodiment, structure on silicon chip as shown in Figure 1, be equipped at least one
It is used to form the frustum of a pyramid shape through-hole of grounding through hole structure, silicon chip upper surface is equipped with front electrode figure, is set at left and right sides of silicon chip
There is interchangeable input/output interface, fluted, groove is etched with front electrode figure opposite position on silicon chip lower surface
Depth is silicon wafer thickness 40-60%.There is the taper grounding through hole 102 of metallization on the dielectric layer of silicon chip.Along the long side of silicon chip
Central axes at be provided with device input/output port 104.The preparation process of the broadband MEMS interdigital filters of the present embodiment
Middle structure change is as shown in Figure 3.
1, high resistant silicon chip is provided as substrate, 400 microns of substrate thickness；It is situated between in the upper and lower surface deposition growing of the silicon chip
Matter film S1, used process equipment are LPCVD, reaction gas SiH2Cl2And NH3, 850-950 DEG C of technological temperature；Medium is thin
The silicon nitride or silica of stress≤200MPa, 1000-2000 angstroms of film thickness, preferably 2000 can be selected in the material of film S1
Angstrom, using dielectric film S1 as masking layer, in the upper and lower surface difference photoetching of the silicon chip and etch media film, form corrosion window
Mouthful；Upper surface corrosion window S2 is rectangular, and size is 50*50 microns；Lower surface corrosion window S3 is square through hole, the allusion quotation of through-hole
Molded dimension is 620*620 microns, and such as photo-polymerization type, photolysis type, photo-crosslinking type can be used in the photoresist that wherein photoetching uses
Photoresist.Then it is resistant to the corrosive protective coating S4 of corrosive liquid in silicon chip surface spin coating, for protecting silicon chip outer rim not rotten
The material of erosion, protective coating S4 is paraffin, Chinese wax or Crystalbond 59.Then silicon chip 101 is carried out using wet etching
Anisotropic etch, corrosive liquid are the KOH solution of 30-50%, are 60-100 DEG C using water bath with thermostatic control control corrosion rate temperature.It is formed
Tetragonous cone table shape through-hole 102, then removes above-mentioned protective coating by acetone or alcohol；
2, in the upper surface sputtering seed layer of the silicon chip, seed layer materials are chromium gold, 1500 angstroms of thickness chromium, golden thickness 2000
Angstrom, interdigitated electrodes figure and two device input/output interfaces described in the seed layer photomask surface, and the friendship is electroplated
Finger-type electrode pattern, device input/output interface and frustum of a pyramid shape through-hole, plating thickness are more than 4 microns, and it is extra to remove later
Seed layer forms the frustum of a pyramid shape through-hole that electrode pattern, device input/output interface and the internal side wall that plating thickeies metallize；
The preferred CPWG input/output interfaces of device input/output interface, and to be located at silicon chip upper surface close for CPWG input/output interfaces
The position of the left and right sides.
3, in the lower surface sputtering seed layer of the silicon chip, seed layer materials are the complex metal layer of chromium and gold, chromium metal
In seed layer photomask surface and backplate figure is electroplated in 1500 angstroms of the thickness of layer, 2000 angstroms of the thickness of gold metal layer, back side electricity
Region except pole figure shape is etched area, and the shape of etched area is corresponding with the front electrode figure of silicon chip upper surface, then
The seed layer of etched area is removed, the back electrode pattern that plating thickeies is formed, exposes position corresponding with the interdigital electrode pattern in front
The silicon substrate set.
4, etched area etches groove S5,200 microns of etching depth on silicon chip lower surface；And final scribing obtains individually
Filter device.
Embodiment 2
In addition to step 4 is not slotted, other steps are in the same manner as in Example 1, and the broadband MEMS interdigital filters of unslotted are made.
The broadband MEMS of unslotted made from broadband MEMS interdigital filters and embodiment 2 to the embodiment of the present invention 1
Interdigital filter is tested.
As MEMS microwave filters, the method for test tests S curve ginseng using microwave probe platform+Network Analyzer
Number, as shown in Figures 4 and 5, within the scope of the test scope of wherein test equipment setting is 10GHz-18GHz.
Test result explanation：Filter before improvement（The filter of embodiment 2）Relative bandwidth be 14.8%, improve
Later filter（The filter of embodiment 1）Relative bandwidth is 25.7%, improves nearly 10 percentage point.It can from comparison
Go out in the case where not changing positive interplanar distance, the relative bandwidth of bigger may be implemented.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, all answer by the change or replacement that can be readily occurred in
It is included within the scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (10)
1. a kind of broadband MEMS interdigital filters, it is characterised in that：Including silicon chip, the silicon chip is equipped at least one be used for
The frustum of a pyramid shape through-hole of grounding through hole structure is formed, the silicon chip upper surface is equipped with front electrode figure, the silicon chip upper surface
It is fluted with front electrode figure opposite position etching on silicon chip lower surface if there are two device input/output interfaces, it is recessed
Groove depth is silicon wafer thickness 40-60%.
2. a kind of broadband MEMS interdigital filters according to claim 1, which is characterized in that the silicon chip is 100 brilliant
To silicon chip.
3. a kind of broadband MEMS interdigital filters according to claim 1, which is characterized in that the front electrode figure
It can be interdigitated electrodes figure.
4. a kind of broadband MEMS interdigital filters according to claim 1, which is characterized in that the silicon chip upper surface is set
There are two interchangeable CPWG input/output interfaces, and CPWG input/output interfaces are located at silicon chip upper surface close to left and right two
The position of side.
5. the preparation method of the broadband MEMS interdigital filters according to claim any one of 1-4, which is characterized in that
This method includes following preparation process：
（1）Silicon chip is provided, is prepared using wet anisotropic etching process on silicon chip, it is logical to form at least one frustum of a pyramid shape
Hole；
（2）In silicon chip upper surface sputtering seed layer, in seed layer photomask surface front electrode figure and device input/output interface,
Then plating front electrode figure, device input/output interface and frustum of a pyramid shape through-hole form the front electrode figure that plating thickeies
The frustum of a pyramid shape through-hole of shape, device input/output interface and internal side wall metallization；
（3）In the lower surface sputtering seed layer of above-mentioned silicon chip, in seed layer photomask surface and backplate figure is electroplated, back side electricity
Region except pole figure shape is etched area, and the shape of etched area is corresponding with the front electrode figure of silicon chip upper surface, then goes
Except the seed layer of etched area, the back electrode pattern that plating thickeies is formed；
（4）Etched area on silicon chip lower surface etches groove, and last scribing obtains the single interdigitated filtering of broadband MEMS
Device.
6. the preparation method of MEMS interdigital filters in broadband according to claim 5, which is characterized in that this method includes
Following preparation process：
（1）Silicon chip is provided, deposits dielectric film in the upper and lower surface of silicon chip, used process equipment is LPCVD, and reaction gas is
SiH2Cl2And NH3, 850-950 DEG C of technological temperature；Using dielectric film as masking layer, photoetching is distinguished in the upper and lower surface of the silicon chip
And etch media film, form corrosion window；Then it is protected in the protective coating of one layer of resistance to KOH corrosion of the surface spin coating of silicon chip
Marginal position is not corroded, and uses the KOH solution of 30-50% as corrosive liquid, is corroded by corrosion window in 60-100 DEG C of temperature
Silicon chip forms through-hole, then removes above-mentioned protective coating；
（2）In the upper surface sputtering seed layer of silicon chip, connect in seed layer photomask surface front electrode figure and device input and output
Mouthful, and the electrode pattern, device input/output interface and the conical through-hole is electroplated, form the front electrode figure that plating thickeies
The frustum of a pyramid shape through-hole of shape, device input/output interface and internal side wall metallization；
（3）In the lower surface sputtering seed layer of above-mentioned silicon chip, in seed layer photomask surface and backplate figure is electroplated, back side electricity
Region except pole figure shape is etched area, and the shape of etched area is corresponding with the front electrode figure of silicon chip upper surface, then goes
Except the seed layer of etched area, the back electrode pattern that plating thickeies is formed；
（4）Etched area on silicon chip lower surface etches groove, and the depth of groove is silicon wafer thickness 40-60%, and last scribing obtains
Obtain broadband MEMS interdigital filters individually.
7. a kind of preparation method of broadband MEMS interdigital filters according to claim 6, which is characterized in that described kind
Sublayer is chromium gold complex metal layer, titanium complex metal layer or titanium tungsten gold complex metal layer.
8. a kind of preparation method of broadband MEMS interdigital filters according to claim 6, which is characterized in that given an account of
Matter film is the silicon nitride film or silicon oxide film of stress≤200MPa.
9. a kind of preparation method of broadband MEMS interdigital filters according to claim 6, which is characterized in that the guarantor
The material for protecting coating is paraffin, Chinese wax or Crystalbond 59.
10. a kind of preparation method of broadband MEMS interdigital filters according to claim 6, which is characterized in that described
Step（1）In, the protective coating is removed by acetone or alcohol.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802208A (en) * | 2019-03-11 | 2019-05-24 | 重庆邮电大学 | Substrate integral wave guide filter and preparation method thereof for millimetre-wave attenuator |
| CN113460953A (en) * | 2021-07-27 | 2021-10-01 | 合肥工业大学 | Electrostatic micro actuator with self-curling interdigital structure |
| CN114976562A (en) * | 2021-07-23 | 2022-08-30 | 苏州华勤源微电子科技有限公司 | Silicon-based microstrip circulator based on MEMS (micro-electromechanical systems) process and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109802208A (en) * | 2019-03-11 | 2019-05-24 | 重庆邮电大学 | Substrate integral wave guide filter and preparation method thereof for millimetre-wave attenuator |
| CN114976562A (en) * | 2021-07-23 | 2022-08-30 | 苏州华勤源微电子科技有限公司 | Silicon-based microstrip circulator based on MEMS (micro-electromechanical systems) process and application thereof |
| CN114976562B (en) * | 2021-07-23 | 2024-04-16 | 苏州华勤源微电子科技有限公司 | Silicon-based microstrip circulator based on MEMS technology and application thereof |
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Application publication date: 20181012 |