CN108631633A - A kind of mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC - Google Patents
A kind of mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC Download PDFInfo
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- CN108631633A CN108631633A CN201810539892.0A CN201810539892A CN108631633A CN 108631633 A CN108631633 A CN 108631633A CN 201810539892 A CN201810539892 A CN 201810539892A CN 108631633 A CN108631633 A CN 108631633A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The present invention discloses a kind of mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, including：First half-bridge submodule is equipped with first switch unit, second switch unit and the first capacitance；After first switch unit is connected with second switch unit forward direction, then it is in parallel with the first capacitance；Second half-bridge submodule is equipped with third switch unit, the 4th switch unit and the second capacitance；After third switch unit is connected with the 4th switch unit forward direction, then it is in parallel with the second capacitance；The parameter of first capacitance and the second capacitance is different；5th switch unit after the first half-bridge submodule and the 5th switch unit differential concatenation, then is connected with the second half-bridge submodule forward direction；One end of 6th diode is connect with the first half-bridge submodule, and the other end is connect with the second half-bridge submodule.The exportable more level numbers of the present invention can reduce the quantity of IGBT, capacitance and diode under the requirement of same level number, reduce operating cost and device loss, greatly cost-effective.
Description
Technical field
The present invention relates to MMC (modularization multi-level converter) field, more particularly to a kind of mixing capacitance electricity based on MMC
Die mould Shuangzi block coupled in series topological structure.
Background technology
Conventional AC or customary DC concentrate access peak load regulation network and scheduling problem not to can be well solved on a large scale.It is based on
Since level number is less, output voltage waveforms are poor, it is necessary to use high frequency PWM technique for two level and three-level voltage source transverter
Improve output waveform, this mode is not only needed to install the switching device of high request and a large amount of filters, be damaged in electricity transmission process
Consumption is also bigger.
And use the flexible direct current of MMC (Modular Multilevel Converter, modularization multi-level converter)
Transmission system introduces modular design concept, and for the MMC of high voltage large capcity, there are many cascade submodule number of use,
And level number can be controlled by increasing and decreasing submodule number, the voltage ladder wave of output is very close to sine wave, waveform matter
Amount is high, without installing filter.MMC uses staircase waveform approximation technique, is lost caused by greatly reducing switching frequency.Due to
The submodule redundancy properties of MMC, improve the stability of transverter.
There are three types of the Basic Topologicals of MMC submodules：Half-bridge submodule, full-bridge submodule and clamp Shuangzi module, and
Traditional topological structure is with mixing capacitance voltage type Shuangzi block coupled in series topology of the invention the case where exporting same level number
Under, the IGBT quantity needed for traditional topological structure, capacitance quantity, number of diodes is more, and device loss is larger, then of the invention
It proposes a kind of mixing capacitance voltage type Shuangzi block coupled in series topology, is further improved in Shuangzi block coupled in series topology, institute
The IGBT quantity needed, capacitance quantity, number of diodes all greatly reduces, and device loss reduces, economic aspect can be great
It is cost-effective.
Invention content
The object of the present invention is to provide a kind of mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC,
It is further improved in Shuangzi block coupled in series topology, by the first capacitance of two half-bridge submodules, the setting of the second capacitance is different
Parameter so that submodule output level number increases, in the case where the output phase is with level number, the mixing capacitance voltage type Shuangzi mould
IGBT quantity needed for block series topology, capacitance quantity, number of diodes all greatly reduce, and device loss reduces, in economy side
It face can be greatly cost-effective.The structure can efficiently reduce the manufacturing cost of device, reduce device loss.
In order to achieve the above objectives, the present invention provides a kind of, and the mixing capacitance voltage type Shuangzi block coupled in series based on MMC is opened up
Structure is flutterred, including：
First half-bridge submodule is provided with first switch unit, second switch unit and the first capacitance；Described first opens
After pass unit is connected with the second switch unit forward direction, then it is in parallel with first capacitance；
Second half-bridge submodule is provided with third switch unit, the 4th switch unit and the second capacitance；The third is opened
After pass unit is connected with the 4th switch unit forward direction, then it is in parallel with second capacitance；First capacitance and described
The parameter of two capacitances is different；
5th switch unit, after the first half-bridge submodule and the 5th switch unit differential concatenation, then with it is described
Second half-bridge submodule forward direction is connected；
6th diode, one end are connect with the first half-bridge submodule, the other end and the second half-bridge submodule
Connection.
Preferably, the first switch unit includes the first IGBT pipes and the first diode；The first IGBT pipes and institute
The first diode inverse parallel is stated, the cathode of first diode is connected with the collector of the first IGBT pipes, and described first
The anode of diode is connected with the emitter of the first IGBT pipes；
The second switch unit includes the 2nd IGBT pipes and the second diode；The 2nd IGBT pipes and the described 2nd 2
Pole pipe inverse parallel, the cathode of second diode are connected with the collector of the 2nd IGBT pipes, second diode
The positive emitter with the 2nd IGBT pipes is connected；
The emitter of the first IGBT pipes is connected with the collector of the 2nd IGBT pipes, the anode of the first capacitance and institute
The cathode for stating the first diode is connected, and the cathode of the first capacitance is connected with the anode of second diode.
Preferably, the third switch unit includes the 3rd IGBT pipes and third diode；The 3rd IGBT pipes and institute
Third diode inverse parallel is stated, the cathode of the third diode is connected with the collector of the 3rd IGBT pipes, the third
The anode of diode is connected with the emitter of the 3rd IGBT pipes；
4th switch unit includes the 4th IGBT pipes and the 4th diode, the 4th IGBT pipes and the described 4th 2
The cathode of pole pipe inverse parallel, the 4th diode is connected with the collector of the 4th IGBT pipes, the 4th diode
The positive emitter with the 4th IGBT pipes is connected；
The emitter of the 3rd IGBT pipes is connected with the collector of the 4th IGBT pipes, the anode of second capacitance
It is connected with the cathode of the third diode, the cathode of second capacitance is connected with the anode of the 4th diode.
Preferably, the 5th switch unit includes the 5th IGBT pipes and the 5th diode, and the 5th IGBT is managed and institute
The 5th diode inverse parallel is stated, the cathode of the 5th diode is connected with the collector of the 5th IGBT pipes, and the described 5th
The anode of diode is connected with the emitter of the 5th IGBT pipes；
The emitter of the 2nd IGBT pipes is connected with the emitter of the 5th IGBT pipes, the collection of the 5th IGBT pipes
Electrode is connected with the collector of the 3rd IGBT pipes.
Preferably, the anode of the 6th diode is connected with the emitter of the 4th IGBT pipes, the six or two pole
The cathode of pipe is connected with the collector of the first IGBT pipes.
Preferably, the midpoint of the first half-bridge submodule and the second half-bridge submodule is the output of MMC submodules
Point；
The capacitance reference value of first capacitance is set as C, and the capacitance voltage reference value of first capacitance is 0.5UC；Institute
The capacitance reference value for stating the second capacitance is 0.5C, and the capacitance voltage reference value of second capacitance is UC。
The mixing capacitance voltage type Shuangzi block coupled in series topological structure for being preferably based on MMC includes four kinds of working conditions, point
It Wei not the first working condition, the second working condition, third working condition and the 4th working condition；
Wherein, when the first working condition, first switch unit and the shutdown of the 4th switch unit, second switch unit and third
Switching means conductive；When the first working condition, the first capacitance and the second capacitance are bypassed, and submodule is zero to external voltage；
When the second working condition, second switch unit and the shutdown of the 4th switch unit, first switch unit and third switch
Unit is connected；When the second working condition, the first capacitance is connected in series in circuit, and the second capacitance is bypassed, and submodule is to external voltage
0.5UC；
When third working condition, first switch unit and the shutdown of third switch unit, second switch unit and the 4th switch
Unit is connected；When third working condition, the second capacitance is connected in series in circuit, and the first capacitance is bypassed, and submodule is to external voltage
UC；
When four working conditions, second switch unit and the shutdown of third switch unit, first switch unit and the 4th switch
Unit is connected；When four working conditions, the first capacitance and the second capacitance are connected in series in circuit, and submodule is to external voltage
1.5UC。
Preferably, first working condition includes the first operating mode and the 5th operating mode；Wherein, first work
Include in operation mode：When electric current enters submodule from the midpoint of the first half-bridge submodule, second switch unit, the 5th switch are flowed through
Unit, third switch unit and from the midpoint of the second half-bridge submodule flow out；Include in 5th operating mode：Electric current from
The midpoint of second half-bridge submodule enters submodule, flow through third switch unit, the 5th switch unit, second switch unit and
It is flowed out from the midpoint of the first half-bridge submodule；
Second working condition includes the second operating mode and the 6th operating mode；Wherein, it is wrapped in the second operating mode
Contain：Electric current enters from the midpoint of the first half-bridge submodule, flows through first switch unit, the first capacitance, the 5th switch unit and the
Three switch units are flowed out from the midpoint of the second half-bridge submodule, are charged to the first capacitance；It is wrapped in 6th operating mode
Contain：Electric current enters from the midpoint of the second half-bridge submodule, flows through third switch unit, the 5th switch unit, the first capacitance and the
One switch unit is flowed out from the midpoint of the first half-bridge submodule, the electric discharge of the first capacitance；
The third working condition includes third operating mode and the 7th operating mode；Wherein, the third operating mode
In include：Electric current enters from the midpoint of the first half-bridge submodule, flows through second switch unit, the 5th switch unit, the second capacitance
With the 4th switch unit, flows out from the midpoint of the second half-bridge submodule, charge to the second capacitance；7th operating mode
In include：Electric current enters from the midpoint of the second half-bridge submodule, flows through the 4th switch unit, the second capacitance, the 5th switch unit
It with second switch unit, is flowed out from the midpoint of the first half-bridge submodule, the electric discharge of the second capacitance；
4th working condition includes the 4th operating mode and the 8th operating mode；Wherein, the 4th operating mode
In include：Electric current from the midpoint of the first half-bridge submodule enter, flow through first switch unit, the first capacitance, the 5th switch unit,
Second capacitance and the 4th switch unit are flowed out from the midpoint of the second half-bridge submodule, are filled to the first capacitance and the second capacitance
Electricity；Include in 6th operating mode：Electric current enters from the midpoint of the second half-bridge submodule, flows through the 4th switch unit, the
Two capacitances, the 5th switch unit, the first capacitance and first switch unit are flowed out from the midpoint of the first half-bridge submodule, the first electricity
Hold and the second capacitance discharges.
The mixing capacitance voltage type Shuangzi block coupled in series topological structure for being preferably based on MMC is single-phase seven level MMC topologys
Structure；The single-phase seven level MMC topological structures are equipped with upper bridge arm and lower bridge arm, and the upper bridge arm includes the first submodule, the
Two submodules and upper bridge arm inductance, the lower bridge arm include third submodule, the 4th submodule and lower bridge arm inductance；
Wherein, the first submodule, the second submodule, upper bridge arm inductance, third submodule, the 4th submodule and lower bridge arm electricity
Sense is sequentially connected in series, and is connected with direct voltage source, and circuit is constituted.
Preferably, upper bridge arm voltage is the sum of the first submodule voltage and the second submodule voltage, and lower bridge arm voltage is the
The sum of three submodule voltages and the 4th submodule voltage.
Compared with prior art, beneficial effects of the present invention are：The present invention passes through in Shuangzi block coupled in series topological structure base
It is improved on plinth, mixed type capacitance is set, by the way that different capacitance parameters is arranged, will make each Shuangzi block coupled in series
Topological structure exports more level numbers, such as different parameters are arranged in the first capacitance of two half-bridge submodules, the second capacitance,
So that submodule output level number increases, and therefore, in MMC operating mode operational process, in the case where same level number requires, this
Mixing capacitance voltage type Shuangzi block coupled in series topological structure of the invention based on MMC can reduce IGBT quantity, capacitance quantity and
Number of diodes reduces operating cost and device loss, economic aspect can be greatly cost-effective.
Description of the drawings
Mixing capacitance voltage type Shuangzi block coupled in series topological structure schematic diagram based on MMC in Fig. 1 embodiment of the present invention；
The single-phase main electricity of MMC based on mixing capacitance voltage type Shuangzi block coupled in series topological structure in Fig. 2 embodiment of the present invention
Road topology schematic diagram；
Four kinds of working conditions based on mixing capacitance voltage type Shuangzi block coupled in series topological structure in Fig. 3 embodiment of the present invention
Schematic diagram；
In Fig. 4 embodiment of the present invention single-phase seven level based on mixing capacitance voltage type Shuangzi block coupled in series topological structure
MMC exchange side V diagrams；
The IGBT pipe usage quantities comparison that different type MMC is exported in same level in Fig. 5 embodiment of the present invention
Figure；
The diode pipe usage quantity pair that different type MMC is exported in same level in Fig. 6 embodiment of the present invention
Than figure；
The capacitance usage quantity comparison diagram that different type MMC is exported in same level in Fig. 7 embodiment of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Figure of description is combined separately below, to provided in an embodiment of the present invention a kind of based on mixing capacitance voltage type Shuangzi
Block coupled in series topological structure illustrates.
Fig. 1 is a kind of mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC in the embodiment of the present invention, packet
Containing two half-bridge submodules (the first half-bridge submodule and the second half-bridge submodule), the 5th switch unit T5With the 6th diode D.
First half-bridge submodule and the 5th switch unit T5After differential concatenation, then connect with the second half-bridge submodule forward direction.
First half-bridge submodule includes first switch unit T1, second switch unit T2With the first capacitance C1, first switch list
First T1With second switch unit T2Forward direction series connection after, then with the first capacitance C1It is in parallel.
Second half-bridge submodule includes third switch unit T3, the 4th switch unit T4With the second capacitance C2, third switch list
First T3With the 4th switch unit T4Forward direction series connection after, then with the second capacitance C2It is in parallel.
The parameter setting of first capacitance and the second capacitance is different.
Wherein, first switch unit T1Including the first IGBT pipe (Insulated Gate Bipolar Transistor,
Insulated gate bipolar transistor) and the first diode, the first IGBT pipes and the first diode inverse parallel, the cathode of the first diode
It is connected with the collector of the first IGBT pipes, the anode of the first diode is connected with the emitter of the first IGBT pipes.Second switch list
First T2Including the 2nd IGBT pipes and the second diode, the 2nd IGBT pipes and the second diode inverse parallel, the cathode of the second diode
It is connected with the collector of the 2nd IGBT pipes, the anode of the second diode is connected with the emitter of the 2nd IGBT pipes.First IGBT is managed
Emitter be connected with the collector of the 2nd IGBT pipes, the first capacitance C1Anode be connected with the cathode of the first diode, first
Capacitance C1Cathode be connected with the anode of the second diode.
Third switch unit T3Including the 3rd IGBT pipes and third diode, the 3rd IGBT pipes with third diode instead simultaneously
Connection, the cathode of third diode are connected with the collector of the 3rd IGBT pipes, the hair of the anode and the 3rd IGBT pipes of third diode
Emitter-base bandgap grading is connected.4th switch unit T4Including the 4th IGBT pipes and the 4th diode, the 4th IGBT pipes with the 4th diode instead simultaneously
Connection, the cathode of the 4th diode are connected with the collector of the 4th IGBT pipes, the hair of the anode and the 4th IGBT pipes of the 4th diode
Emitter-base bandgap grading is connected.The emitter of 3rd IGBT pipes is connected with the collector of the 4th IGBT pipes, the second capacitance C2Anode with the three or two
The cathode of pole pipe is connected, the second capacitance C2Cathode be connected with the anode of the 4th diode.
5th switch unit T5Including the 5th IGBT pipes and the 5th diode, the 5th IGBT pipes with the 5th diode instead simultaneously
Connection, the cathode of the 5th diode are connected with the collector of the 5th IGBT pipes, the hair of the anode and the 5th IGBT pipes of the 5th diode
Emitter-base bandgap grading is connected.The emitter of 2nd IGBT pipes and the emitter of the 5th IGBT pipes are connected, the collector and third of the 5th IGBT pipes
The collector of IGBT pipes is connected.
The anode of 6th diode D is connected with the emitter of the 4th IGBT pipes, the cathode and the first IGBT of the 6th diode D
The collector of pipe is connected.
As shown in Figure 1, (the B points are the second half-bridge submodule to A points (the A points are the midpoint of the first half-bridge submodule) with B points
Midpoint) between voltage UsmFor the output voltage of MMC submodules；Electric current i between A points and B pointssmIt is logical for the output voltage
The electric current entered.First capacitance C1Capacitance reference value be C, the first capacitance C1Voltage reference value be 0.5UC；Second capacitance C2's
Capacitance reference value is 0.5C, the second capacitance C2Voltage reference value be UC。
Fig. 2 is the one provided in an embodiment of the present invention list based on mixing capacitance voltage type Shuangzi block coupled in series topological structure
Seven level MMC topological structure schematic diagrames of phase.
As shown in Fig. 2, DC voltage is Udc, exchange side output voltage is Ua.Upper bridge arm includes the first submodule SM1、
The second submodule SM2With upper bridge arm inductance, lower bridge arm includes third submodule SM3, the 4th submodule SM4With lower bridge arm inductance.Its
In, the first submodule SM1, the second submodule SM2, upper bridge arm inductance, third submodule SM3, the 4th submodule SM4And lower bridge arm
Inductance is sequentially connected in series, and is connected with direct voltage source, and circuit is constituted.Upper bridge arm voltage UpaFor the first submodule voltage USM1With
Two submodule voltage USM2The sum of, lower bridge arm voltage UnaFor third submodule voltage USM3With the 4th submodule voltage USM4The sum of.
Fig. 3 is that four kinds of working conditions of mixing capacitance voltage type Shuangzi block coupled in series topology provided in an embodiment of the present invention are shown
It is intended to.As shown in figure 3, according to the on off state and current direction of IGBT, each working condition can be respectively divided into two works
Operation mode, totally eight operating modes；When normal work, the 5th switch unit T5It is in conducting state forever, if not doing special theory
It is bright, then give tacit consent to conducting.
As shown in figure 3, working as first switch unit T1With the 4th switch unit T4Shutdown, second switch unit T2It is opened with third
Close unit T3When conducting, referred to as the first working condition is referred to as " bypass condition " or " excision state ", the first work shape
There are two kinds of operating modes (being respectively the first operating mode and the 5th operating mode) for state：When electric current enters submodule from A, flow through
Second switch unit T2, the 5th switch unit T5, third switch unit T3And it is flowed out from B, referred to as the first operating mode；Electricity
Stream enters submodule from B, flows through third switch unit T3, the 5th switch unit T5, second switch unit T2And it flows out, claims from A
Be the 5th operating mode；In the first working condition, the first capacitance C1With the second capacitance C2It is bypassed, whole Shuangzi mould
Block is zero to external voltage (i.e. output voltage between 2 points of AB).
As shown in figure 3, working as second switch unit T2With the 4th switch unit T4Shutdown, first switch unit T1It is opened with third
Close unit T3When conducting, referred to as the second working condition, it (is respectively the second work that the second working condition, which equally exists two kinds of operating modes,
Operation mode and the 6th operating mode).In the second operating mode, electric current enters from A, flows through first switch unit T1, first electricity
Hold C1, the 5th switch unit T5With third switch unit T3, flowed out from B, to the first capacitance C under this pattern1It charges；It is right
Six operating modes of Ying Yu, electric current enter from B, flow through third switch unit T3, the 5th switch unit T5, the first capacitance C1With
One switch unit T1, flowed out from A, to the first capacitance C under this pattern1Electric discharge.In the second working condition, the first capacitance C1String
It is linked in circuit, the second capacitance C2It is bypassed, whole Shuangzi module is 0.5U to external voltageC。
As shown in figure 3, working as first switch unit T1With third switch unit T3Shutdown, second switch unit T2It is opened with the 4th
Close unit T4When conducting, referred to as third working condition.It (is respectively third work that third working condition, which still has two kinds of operating modes,
Operation mode and the 7th operating mode).In third operating mode, electric current enters from A, flows through second switch unit T2, the 5th open
Close unit T5, the second capacitance C2With the 4th switch unit T4, flowed out from B, to the second capacitance C under this pattern2It charges；The
Under seven operating modes, electric current enters from B, flows through the 4th switch unit T4, the second capacitance C2, the 5th switch unit T5It is opened with second
Close unit T2, flowed out from A, the second capacitance C under this pattern2Electric discharge；In third working condition, the second capacitance C2It is connected in series to electricity
Lu Zhong, the first capacitance C1It is bypassed, whole Shuangzi module is U to external voltageC。
As shown in figure 3, working as second switch unit T2With third switch unit T3Shutdown, first switch unit T1It is opened with the 4th
Close unit T4When conducting, referred to as the 4th working condition, the 4th working condition (is respectively the 4th work there is also two kinds of operating modes
Pattern and the 8th operating mode).In the 4th operating mode, electric current enters from A, flows through first switch unit T1, the first capacitance
C1, the 5th switch unit T5, the second capacitance C2With the 4th switch unit T4, flowed out from B, to the first capacitance C under this pattern1With
Two capacitance C2It charges；Under 6th operating mode, electric current enters from B, flows through the 4th switch unit T4, the second capacitance C2, the 5th
Switch unit T5, the first capacitance C1With first switch unit T1, flowed out from A, the first capacitance C under this pattern1With the second capacitance C2
Electric discharge；In the 4th working condition, the first capacitance C1With the second capacitance C2It is connected in series in circuit, whole Shuangzi module pair
External voltage is 1.5UC。
Five are switched in table 1, number 1 is conducting state, and 0 corresponds to off state；According to the switch combination of table 1,
It can distinguish " input " and " excision " of the first capacitance in control submodule, the second capacitance；After being controlled using capacitor voltage equalizing, each
The voltage of submodule capacitance is held essentially constant, thus each mixing capacitance voltage type Shuangzi module can regard one as can be with
Generate 0,0.5UC、UCAnd 1.5UCThe controllable voltage source of four kinds of voltage, just can be double to all mixing capacitance voltage types according to table 1
Submodule is controlled, and the output voltage of needs is generated.
Eight kinds of operating modes based on mixing capacitance voltage type Shuangzi block coupled in series topological structure in 1 embodiment of the present invention of table
Table
Fig. 4 be the embodiment of the present invention in single-phase seven level based on mixing capacitance voltage type Shuangzi block coupled in series topological structure
MMC exchange side V diagrams.
Single-phase 7 level mixing capacitance voltage type Shuangzi block coupled in series topological circuit includes four submodules, each submodule
Voltage be set to Usm1、Usm2、Usm3And Usm4, upper bridge arm and lower bridge arm voltage are respectively UpaAnd Una, O points are no-voltage point,
Exchange side a point voltages are Ua, when steady-state operation, bridge arm inductive drop can be ignored, DC voltage Udc, need to meet
Voltage equation in following formula：
In order to ensure DC-side Voltage Stabilization, at any time, MMC bridge arms put into submodule voltage and remain unchanged,
Each submodule can generate four kinds of voltages, can be analyzed in conjunction with expression formula, MMC can generate 7 kinds of voltages in a points：
ua=0, ± 0.5uC,±uC,±1.5uC
Based on above principle, suitable modulator approach and control strategy are selected, MMC can be realized rectification and inversion,
In order to more intuitively show, the modulator approach approached using nearest level, using sine wave as modulating wave, MMC can be generated such as
Voltage waveform shown in Fig. 4.
As shown in Table 2, further Fig. 4 is analyzed, seven periods of A, B, C, D, E, F, G correspond to seven kinds of different electricity
Flat, the input situation of upper and lower bridge arm submodule is shown in Table 2, any time, the first capacitance and the second capacitance in upper and lower bridge arm submodule
Input sum be 2, this ensure that DC voltage be UdcIt remains unchanged；Under this constraints, pass through switching bridge
The number of first capacitance and the second capacitance input in arm, to reach exchange side voltage UaFor the purpose of sine wave.
In 2 embodiment of the present invention of table single-phase seven level based on mixing capacitance voltage type Shuangzi block coupled in series topological structure
Its submodule Input Mode analytical table of MMC
Table 3 is the single bridge arm number of devices contrast tables of different type MMC in the embodiment of the present invention.Further analysis, if on
Bridge arm submodule number is N, then is based on the electricity of mixing capacitance voltage type Shuangzi block coupled in series topological structure MMC (HCVDS-MMC)
Flat number is 3N+1, and in the case of identical submodule number, it is only 2 × N+ based on clamp Shuangzi module MMC (DS-MMC) level number
1；MMC (H-MMC) now based on half-bridge submodule topology, the MMC (F-MMC) based on full-bridge submodule topology, it is based on clamp
The MMC (DS-MMC) of Shuangzi module and based on mixing capacitance voltage type Shuangzi block coupled in series topological structure MMC (HCVDS-MMC) four
The summaries such as level number, capacitance number, the IGBT number of the MMC of type are as shown in table 3.
Wherein, half-bridge submodule number be N in the case of, due to based on clamp Shuangzi module MMC (DS-MMC) and
There are two including in each submodule based on mixing capacitance voltage type Shuangzi block coupled in series topological structure MMC (HCVDS-MMC)
Capacitance, so the capacitance quantity of the two, IGBT number, diode number are all higher than the MMC (H- based on half-bridge submodule topology
) and the MMC (F-MMC) based on full-bridge submodule topology MMC；On the contrary, based on mixing capacitance voltage type Shuangzi block coupled in series topology
Structure MMC (HCVDS-MMC) and the level number for being based on clamp Shuangzi module MMC (DS-MMC) will be more than to be opened up based on full-bridge submodule
The MMC (F-MMC) flutterred the and MMC (H-MMC) based on half-bridge submodule topology.
The single bridge arm number of devices contrast tables of different type MMC in 3 embodiment of the present invention of table
| MMC types | Capacitance number | Submodule number | IGBT number | Diode number | Level number |
| H-MMC | N | N | 2N | 2N | N+1 |
| F-MMC | N | N | 4N | 4N | N+1 |
| DS-MMC | 2N | N | 5N | 6N | 2N+1 |
| HCVDS-MMC | 2N | N | 5N | 6N | 3N+1 |
Fig. 5 is the IGBT pipe usage quantities pair that different type MMC is exported in same level in the embodiment of the present invention
Than figure.In order to carry out analysis intuitive in detail, using level number as reference data, the IGBT pipe numbers of different type MMC have been obtained
Relation curve between level number.Fig. 6 is different type MMC is exported in same level in the embodiment of the present invention two
Pole pipe pipe usage quantity comparison diagram.In order to carry out analysis intuitive in detail, using level number as reference data, different type has been obtained
Relation curve between the number of diodes and level number of MMC.Fig. 7 is different type MMC in the embodiment of the present invention in same electricity
Capacitance usage quantity comparison diagram in the case of flat output.In order to carry out analysis intuitive in detail, using level number as reference data, obtain
Relation curve between the capacitance number and level number of different type MMC.Wherein, abscissa is level number, and ordinate is
IGBT number.
Shown in Fig. 5, Fig. 6 and Fig. 7 combination, the embodiment of the present invention is shown in the case of same level number, based on complete
The number of devices that the MMC (F-MMC) of bridge submodule topology needs is most, is taken second place based on clamp Shuangzi module MMC (DS-MMC), base
It is less than the above two in the number of devices that the MMC (H-MMC) of half-bridge submodule topology needs, based on mixing capacitance voltage type Shuangzi mould
The number of devices that block series topology structure MMC (HCVDS-MMC) needs is minimum.With increasing for level number, based on mixing capacitance
Voltage-type Shuangzi block coupled in series topological structure MMC (HCVDS-MMC) can greatly saving components, save cost.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, which is characterized in that include：
First half-bridge submodule is provided with first switch unit (T1), second switch unit (T2) and the first capacitance (C1)；Institute
State first switch unit (T1) and the second switch unit (T2) after positive series connection, then with the first capacitance (C1) in parallel；
Second half-bridge submodule is provided with third switch unit (T3), the 4th switch unit (T4) and the second capacitance (C2)；Institute
State third switch unit (T3) and the 4th switch unit (T4) after positive series connection, then with the second capacitance (C2) in parallel；Institute
State the first capacitance (C1) and the second capacitance (C2) parameter it is different；
5th switch unit (T5), the first half-bridge submodule and the 5th switch unit (T5) after differential concatenation, then with institute
State the series connection of the second half-bridge submodule forward direction；
6th diode (D), one end are connect with the first half-bridge submodule, and the other end connects with the second half-bridge submodule
It connects.
2. the mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, feature exist as described in claim 1
In,
First switch unit (the T1) include the first IGBT pipes and the first diode；The first IGBT pipes and the described 1st
Pole pipe inverse parallel, the cathode of first diode are connected with the collector of the first IGBT pipes, first diode
The positive emitter with the first IGBT pipes is connected；
Second switch unit (the T2) include the 2nd IGBT pipes and the second diode；The 2nd IGBT pipes and the described 2nd 2
Pole pipe inverse parallel, the cathode of second diode are connected with the collector of the 2nd IGBT pipes, second diode
The positive emitter with the 2nd IGBT pipes is connected；
The emitter of the first IGBT pipes is connected with the collector of the 2nd IGBT pipes, the first capacitance (C1) anode and institute
The cathode for stating the first diode is connected, the first capacitance (C1) cathode be connected with the anode of second diode.
3. the mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, feature exist as claimed in claim 2
In,
Third switch unit (the T3) include the 3rd IGBT pipes and third diode；The 3rd IGBT pipes and the described 3rd 2
Pole pipe inverse parallel, the cathode of the third diode are connected with the collector of the 3rd IGBT pipes, the third diode
The positive emitter with the 3rd IGBT pipes is connected；
4th switch unit (the T4) include the 4th IGBT pipes and the 4th diode, the 4th IGBT pipes and the described 4th 2
The cathode of pole pipe inverse parallel, the 4th diode is connected with the collector of the 4th IGBT pipes, the 4th diode
The positive emitter with the 4th IGBT pipes is connected；
The emitter of the 3rd IGBT pipes is connected with the collector of the 4th IGBT pipes, the second capacitance (C2) anode
It is connected with the cathode of the third diode, the second capacitance (C2) cathode be connected with the anode of the 4th diode.
4. the mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, feature exist as claimed in claim 3
In,
5th switch unit (the T5) include the 5th IGBT pipes and the 5th diode, the 5th IGBT pipes and the described 5th 2
The cathode of pole pipe inverse parallel, the 5th diode is connected with the collector of the 5th IGBT pipes, the 5th diode
The positive emitter with the 5th IGBT pipes is connected；
The emitter of the 2nd IGBT pipes is connected with the emitter of the 5th IGBT pipes, the collector of the 5th IGBT pipes
It is connected with the collector of the 3rd IGBT pipes.
5. the mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC as described in claim 3 or 4, feature
It is,
The anode of 6th diode (D) is connected with the emitter of the 4th IGBT pipes, and the 6th diode (D) is born
Pole is connected with the collector of the first IGBT pipes.
6. the mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, feature exist as described in claim 1
In,
First capacitance (the C1) capacitance reference value be set as C, the first capacitance (C1) capacitance voltage reference value be 0.5UC；
Second capacitance (the C2) capacitance reference value be 0.5C, the second capacitance (C2) capacitance voltage reference value be UC。
7. the mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, feature exist as claimed in claim 6
In, the topological structure include four kinds of working conditions, respectively the first working condition, the second working condition, third working condition and
4th working condition；
Wherein, when the first working condition, first switch unit (T1) and the 4th switch unit (T4) shutdown, second switch unit
(T2) and third switch unit (T3) conducting；When the first working condition, the first capacitance (C1) and the second capacitance (C2) be bypassed,
Submodule is zero to external voltage；
When the second working condition, second switch unit (T2) and the 4th switch unit (T4) shutdown, first switch unit (T1) and the
Three switch unit (T3) conducting；When the second working condition, the first capacitance (C1) be connected in series in circuit, the second capacitance (C2) be bypassed,
Submodule is 0.5U to external voltageC；
When third working condition, first switch unit (T1) and third switch unit (T3) shutdown, second switch unit (T2) and the
Four switch unit (T4) conducting；When third working condition, the second capacitance (C2) be connected in series in circuit, the first capacitance (C1) be bypassed,
Submodule is U to external voltageC；
When four working conditions, second switch unit (T2) and third switch unit (T3) shutdown, first switch unit (T1) and the
Four switch unit (T4) conducting；When four working conditions, the first capacitance (C1) and the second capacitance (C2) be connected in series in circuit,
Submodule is 1.5U to external voltageC。
8. the mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, feature exist as claimed in claim 7
In,
First working condition includes the first operating mode and the 5th operating mode；
Wherein, include in first operating mode：When electric current enters submodule from the midpoint of the first half-bridge submodule, is flowed through
Two switch unit (T2), the 5th switch unit (T5), third switch unit (T3) and flowed from the midpoint of the second half-bridge submodule
Go out；
Include in 5th operating mode：Electric current enters submodule from the midpoint of the second half-bridge submodule, flows through third switch
Unit (T3), the 5th switch unit (T5), second switch unit (T2) and flowed out from the midpoint of the first half-bridge submodule；
Second working condition includes the second operating mode and the 6th operating mode；
Wherein, include in the second operating mode：Electric current enters from the midpoint of the first half-bridge submodule, flows through first switch unit
(T1), the first capacitance (C1), the 5th switch unit (T5) and third switch unit (T3), it is flowed from the midpoint of the second half-bridge submodule
Go out, to the first capacitance (C1) charge；
Include in 6th operating mode：Electric current enters from the midpoint of the second half-bridge submodule, flows through third switch unit
(T3), the 5th switch unit (T5), the first capacitance (C1) and first switch unit (T1), it is flowed from the midpoint of the first half-bridge submodule
Go out, the first capacitance (C1) electric discharge；
The third working condition includes third operating mode and the 7th operating mode；
Wherein, include in the third operating mode：Electric current enters from the midpoint of the first half-bridge submodule, flows through second switch list
Member (T2), the 5th switch unit (T5), the second capacitance (C2) and the 4th switch unit (T4), from the midpoint of the second half-bridge submodule
Outflow, to the second capacitance (C2) charge；
Include in 7th operating mode：Electric current enters from the midpoint of the second half-bridge submodule, flows through the 4th switch unit
(T4), the second capacitance (C2), the 5th switch unit (T5) and second switch unit (T2), it is flowed from the midpoint of the first half-bridge submodule
Go out, the second capacitance (C2) electric discharge；
4th working condition includes the 4th operating mode and the 8th operating mode；
Wherein, include in the 4th operating mode：Electric current enters from the midpoint of the first half-bridge submodule, flows through first switch list
Member (T1), the first capacitance (C1), the 5th switch unit (T5), the second capacitance (C2) and the 4th switch unit (T4), from the second half-bridge
The midpoint of submodule is flowed out, to the first capacitance (C1) and the second capacitance (C2) charge；
Include in 6th operating mode：Electric current enters from the midpoint of the second half-bridge submodule, flows through the 4th switch unit
(T4), the second capacitance (C2), the 5th switch unit (T5), the first capacitance (C1) and first switch unit (T1), from the first half-bridge
The midpoint of module is flowed out, the first capacitance (C1) and the second capacitance (C2) electric discharge.
9. the mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, feature exist as described in claim 1
In,
The topological structure is single-phase seven level MMC topological structures；
The single-phase seven level MMC topological structures are equipped with upper bridge arm and lower bridge arm, and the upper bridge arm includes the first submodule (SM1)、
The second submodule (SM2) and upper bridge arm inductance, the lower bridge arm include third submodule (SM3), the 4th submodule (SM4) and under
Bridge arm inductance；
Wherein, the first submodule (SM1), the second submodule (SM2), upper bridge arm inductance, third submodule (SM3), the 4th submodule
(SM4) and lower bridge arm inductance be sequentially connected in series, and be connected with direct voltage source, constitute circuit.
10. the mixing capacitance voltage type Shuangzi block coupled in series topological structure based on MMC, feature exist as claimed in claim 9
In,
Upper bridge arm voltage (Upa) it is the first submodule voltage (USM1) and the second submodule voltage (USM2The sum of), lower bridge arm voltage
(Una) it is third submodule voltage (USM3) and the 4th submodule voltage (USM4The sum of).
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110943636A (en) * | 2019-11-25 | 2020-03-31 | 国网山东省电力公司潍坊供电公司 | Multi-level module for clearing direct current short-circuit current |
| CN111277142A (en) * | 2020-03-09 | 2020-06-12 | 中国科学院电工研究所 | Coupling inductance type high-voltage high-power direct-current converter for space and control system thereof |
| CN111756265A (en) * | 2020-07-28 | 2020-10-09 | 华北电力大学（保定） | Half-level MMC topological structure and modulation method thereof |
| CN116316859A (en) * | 2023-05-17 | 2023-06-23 | 北京金风科创风电设备有限公司 | Wind generating set, control method and device thereof, and computer readable storage medium |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762879A (en) * | 2014-01-28 | 2014-04-30 | 华南理工大学 | Dual-output single-phase three-switch-group MMC inverter without direct current bias and control method thereof |
| CN104617783A (en) * | 2014-12-29 | 2015-05-13 | 天津大学 | Improved structure of MMC (Modular Multilevel Converter) current converter with direct-current fault current-limiting capacity and isolating method |
| CN105119511A (en) * | 2015-08-28 | 2015-12-02 | 江苏省电力公司扬州供电公司 | MMC sub module circuit with DC-side fault blocking ability |
| CN106411166A (en) * | 2016-11-15 | 2017-02-15 | 北京四方继保自动化股份有限公司 | Modular multi-level converter hybrid bridge arm topology structure |
| CN106877698A (en) * | 2015-12-10 | 2017-06-20 | 特变电工新疆新能源股份有限公司 | A kind of flexible direct current power transmission system topological structure |
| CN106921307A (en) * | 2015-12-24 | 2017-07-04 | 国网智能电网研究院 | A kind of flexible direct current transverter submodule topological structure |
| CN206432914U (en) * | 2017-01-24 | 2017-08-22 | 南京工程学院 | A kind of Modularized multi-level converter sub-module topological structure |
-
2018
- 2018-05-30 CN CN201810539892.0A patent/CN108631633B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762879A (en) * | 2014-01-28 | 2014-04-30 | 华南理工大学 | Dual-output single-phase three-switch-group MMC inverter without direct current bias and control method thereof |
| CN104617783A (en) * | 2014-12-29 | 2015-05-13 | 天津大学 | Improved structure of MMC (Modular Multilevel Converter) current converter with direct-current fault current-limiting capacity and isolating method |
| CN105119511A (en) * | 2015-08-28 | 2015-12-02 | 江苏省电力公司扬州供电公司 | MMC sub module circuit with DC-side fault blocking ability |
| CN106877698A (en) * | 2015-12-10 | 2017-06-20 | 特变电工新疆新能源股份有限公司 | A kind of flexible direct current power transmission system topological structure |
| CN106921307A (en) * | 2015-12-24 | 2017-07-04 | 国网智能电网研究院 | A kind of flexible direct current transverter submodule topological structure |
| CN106411166A (en) * | 2016-11-15 | 2017-02-15 | 北京四方继保自动化股份有限公司 | Modular multi-level converter hybrid bridge arm topology structure |
| CN206432914U (en) * | 2017-01-24 | 2017-08-22 | 南京工程学院 | A kind of Modularized multi-level converter sub-module topological structure |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110943636A (en) * | 2019-11-25 | 2020-03-31 | 国网山东省电力公司潍坊供电公司 | Multi-level module for clearing direct current short-circuit current |
| CN110943636B (en) * | 2019-11-25 | 2023-04-28 | 国网山东省电力公司潍坊供电公司 | Multi-level module for eliminating direct current short-circuit current |
| CN111277142A (en) * | 2020-03-09 | 2020-06-12 | 中国科学院电工研究所 | Coupling inductance type high-voltage high-power direct-current converter for space and control system thereof |
| CN111277142B (en) * | 2020-03-09 | 2022-02-11 | 中国科学院电工研究所 | Coupling inductance type high-voltage high-power direct-current converter for space and control system thereof |
| CN111756265A (en) * | 2020-07-28 | 2020-10-09 | 华北电力大学（保定） | Half-level MMC topological structure and modulation method thereof |
| CN111756265B (en) * | 2020-07-28 | 2023-09-01 | 华北电力大学（保定） | Half-level MMC topological structure and modulation method thereof |
| CN116316859A (en) * | 2023-05-17 | 2023-06-23 | 北京金风科创风电设备有限公司 | Wind generating set, control method and device thereof, and computer readable storage medium |
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|---|---|
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